CN111584685A - Novel solar cell and preparation method thereof - Google Patents

Novel solar cell and preparation method thereof Download PDF

Info

Publication number
CN111584685A
CN111584685A CN202010469748.1A CN202010469748A CN111584685A CN 111584685 A CN111584685 A CN 111584685A CN 202010469748 A CN202010469748 A CN 202010469748A CN 111584685 A CN111584685 A CN 111584685A
Authority
CN
China
Prior art keywords
layer
solar cell
polycrystalline silicon
carrying
silicon layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010469748.1A
Other languages
Chinese (zh)
Inventor
付少剑
钟潇
白玉磐
陈园
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangxi Zhanyu Xinneng Technology Co ltd
Original Assignee
Jiangxi Zhanyu Xinneng Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangxi Zhanyu Xinneng Technology Co ltd filed Critical Jiangxi Zhanyu Xinneng Technology Co ltd
Priority to CN202010469748.1A priority Critical patent/CN111584685A/en
Publication of CN111584685A publication Critical patent/CN111584685A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The invention discloses a preparation method of a novel solar cell, which comprises the steps of carrying out double-sided oxidation on P-type matrix silicon, and then carrying out polycrystalline silicon deposition to obtain a front polycrystalline silicon layer and a back polycrystalline silicon layer; carrying out phosphorus diffusion on the back polycrystalline silicon layer to obtain an N-type doped polycrystalline silicon layer; arranging a protective layer on the surface of the N-type doped polycrystalline silicon layer to obtain a solar cell to be etched; removing the front surface oxidation layer and the front surface polycrystalline silicon layer in the front surface nonmetal area; removing the mask layer and the protective layer to obtain a solar cell front object; carrying out boron doping on the front surface of the solar cell front object; and sequentially arranging a surface passivation layer and a surface electrode on the front surface and the back surface of the boron-doped solar cell front object to obtain the novel solar cell. The invention simplifies the production process of the solar cell, reduces the damage and the unevenness of the emitter and improves the efficiency of the cell. The invention also provides a novel solar cell with the advantages.

Description

Novel solar cell and preparation method thereof
Technical Field
The invention relates to the field of new photovoltaic energy, in particular to a novel solar cell and a preparation method thereof.
Background
In a solar cell, a PN junction is a necessary condition for generating photovoltaic current, and taking a P-type PERC cell as an example, an N-type emitter prepared by phosphorus diffusion on a P-type silicon substrate and the P-type silicon substrate form a PN junction to generate a built-in electric field, so that a photovoltaic effect is generated during illumination; therefore, the preparation of the emitter in the solar cell is crucial, and the uniformity and consistency of the emitter seriously affect the open-circuit voltage and the short-circuit current of the cell.
However, in order to improve the photoelectric conversion efficiency of the solar cell and reduce the carrier recombination inside the cell, various treatments have to be performed on the surface of the solar cell in the industry, and various epitaxial layers are arranged, so that the production process of the solar cell is more complicated and more various, and the more various steps not only slow down the production efficiency, but also reduce the defects of large materials and process, and reduce the process precision, thereby causing the damage and the unevenness of the emitter.
Therefore, how to simplify the solar cell production process and protect the emitter of the solar cell from damage becomes a problem to be solved by those skilled in the art.
Disclosure of Invention
The invention aims to provide a novel solar cell and a preparation method thereof, and aims to solve the problem of emitter damage caused by complex production process of the solar cell in the prior art.
In order to solve the above technical problems, the present invention provides a method for manufacturing a solar cell, comprising:
carrying out double-sided oxidation on the P-type substrate silicon to obtain a front oxide layer and a back oxide layer;
performing polycrystalline silicon deposition on the surfaces of the front-side oxide layer and the back-side oxide layer to obtain a front-side polycrystalline silicon layer and a back-side polycrystalline silicon layer;
carrying out phosphorus diffusion on the back polycrystalline silicon layer to obtain an N-type doped polycrystalline silicon layer;
arranging a protective layer on the surface of the N-type doped polycrystalline silicon layer to obtain a solar cell to be etched;
setting a mask layer in a front metal area of the solar cell to be etched, and cleaning the solar cell to be etched so as to remove the front oxidation layer and the front polycrystalline silicon layer in the front non-metal area;
removing the mask layer and the protective layer to obtain a solar cell front object;
carrying out boron doping on the front side of the solar cell front object to obtain a highly doped front side polycrystalline silicon layer and a highly doped front side diffusion layer;
and sequentially arranging a surface passivation layer and a surface electrode on the front surface and the back surface of the boron-doped solar cell front object to obtain the novel solar cell.
Optionally, in the method for manufacturing a novel solar cell, the protective layer is a silicon oxynitride protective layer.
Optionally, in the method for manufacturing a novel solar cell, the thickness of the silicon oxynitride protective layer ranges from 50 nm to 80 nm, inclusive.
Optionally, in the method for manufacturing a novel solar cell, before performing double-sided oxidation on P-type substrate silicon, the method further includes:
and carrying out surface polishing on the P-type substrate silicon.
Optionally, in the method for manufacturing a novel solar cell, the surface polishing the P-type base silicon includes:
and carrying out alkali polishing on the P-type base silicon.
Optionally, in the method for manufacturing a novel solar cell, after the phosphorus diffusion is performed on the back polysilicon layer, the method further includes:
and carrying out PSG cleaning on the N-type doped polycrystalline silicon layer.
Optionally, in the method for manufacturing a novel solar cell, the performing PSG cleaning on the N-type doped polysilicon layer includes:
and carrying out PSG cleaning on the N-type doped polycrystalline silicon layer by using hydrofluoric acid.
Optionally, in the method for manufacturing a novel solar cell, after the cleaning of the solar cell precursor, the method further includes:
and performing surface texturing on the front non-metal area.
Optionally, in the method for manufacturing a novel solar cell, the surface passivation layer is a silicon nitride passivation layer.
A novel solar cell obtained by the novel solar cell production method as in any one of the above.
According to the preparation method of the solar cell, the front oxide layer and the back oxide layer are obtained by carrying out double-sided oxidation on the P-type substrate silicon; performing polycrystalline silicon deposition on the surfaces of the front-side oxide layer and the back-side oxide layer to obtain a front-side polycrystalline silicon layer and a back-side polycrystalline silicon layer; carrying out phosphorus diffusion on the back polycrystalline silicon layer to obtain an N-type doped polycrystalline silicon layer; arranging a protective layer on the surface of the N-type doped polycrystalline silicon layer to obtain a solar cell to be etched; setting a mask layer in a front metal area of the solar cell to be etched, and cleaning the solar cell to be etched so as to remove the front oxidation layer and the front polycrystalline silicon layer in the front non-metal area; removing the mask layer and the protective layer to obtain a solar cell front object; carrying out boron doping on the front side of the solar cell front object to obtain a highly doped front side polycrystalline silicon layer and a highly doped front side diffusion layer; and sequentially arranging a surface passivation layer and a surface electrode on the front surface and the back surface of the boron-doped solar cell front object to obtain the novel solar cell. In addition, after the emitter (namely the N-type doped polycrystalline silicon layer) is obtained, the emitter is immediately covered by the protective layer, so that the emitter is prevented from being damaged by subsequent treatment on other structures, the damage and the unevenness of the emitter caused by complex process and process precision are reduced, a process window is enlarged, the surface integrity of the emitter in the finished solar cell is ensured, and the power generation efficiency of the finished solar cell is improved. The invention also provides a novel solar cell with the beneficial effects.
Drawings
In order to more clearly illustrate the embodiments or technical solutions of the present invention, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without creative efforts.
FIG. 1 is a schematic flow chart of one embodiment of the novel solar cell provided by the present invention;
FIG. 2 is a schematic flow chart of another embodiment of the novel solar cell provided by the present invention;
fig. 3 is a schematic flow chart of another embodiment of the novel solar cell provided by the present invention.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The core of the invention is to provide a method for preparing a novel solar cell, wherein the flow diagram of one specific embodiment is shown in fig. 1, which is called as a first specific embodiment and comprises the following steps:
s101: and carrying out double-sided oxidation on the P-type substrate silicon to obtain a front oxide layer and a back oxide layer.
Before the double-sided oxidation is carried out on the P-type substrate silicon, the surface of the P-type substrate silicon can be polished and cleaned, a surface damage layer of the P-type silicon substrate is removed, the reflectivity of a polished silicon wafer is controlled to be 30% -40%, and further the surface polishing is alkali polishing.
The thickness range of the front surface oxide layer and the back surface oxide layer is 1.5-2.5 nanometers.
S102: and carrying out polycrystalline silicon deposition on the surfaces of the front-side oxide layer and the back-side oxide layer to obtain a front-side polycrystalline silicon layer and a back-side polycrystalline silicon layer.
The deposition temperature range of the polysilicon deposition is 400-650 ℃, the deposition time range is 120-210 minutes, and the thickness ranges of the front polysilicon layer and the back polysilicon layer are 50-150 nanometers.
S103: and carrying out phosphorus diffusion on the back polycrystalline silicon layer to obtain an N-type doped polycrystalline silicon layer.
The diffusion temperature of the phosphorus diffusion is 700-780 ℃, the diffusion time is 40-80 minutes, and the square resistance of the surface after diffusion is 80-130 ohms.
After the phosphorus diffusion is performed on the back-side polysilicon layer, PSG (phosphosilicate glass) cleaning may be performed on the N-type doped polysilicon layer, and further, the PSG cleaning is cleaning using hydrofluoric acid.
S104: and arranging a protective layer on the surface of the N-type doped polycrystalline silicon layer to obtain the solar cell to be etched.
S105: and arranging a mask layer in the front metal area of the solar cell to be etched, and cleaning the solar cell to be etched so as to remove the front oxidation layer and the front polycrystalline silicon layer in the front non-metal area.
The specific cleaning process is that the polycrystalline silicon in the front non-metal area is removed by etching in 3% -8% concentration alkali solution at the temperature of 70-75 ℃; and removing the front silicon oxide layer by using a 5% -8% hydrofluoric acid solution.
S106: and removing the mask layer and the protective layer to obtain the solar cell front object.
S107: and carrying out boron doping on the front surface of the solar cell front object to obtain a highly doped front-side polycrystalline silicon layer and a highly doped front-side diffusion layer.
The temperature of boron doping is 850-950 ℃, the doping time is 100-150 minutes, and the square resistance of the front metal area and the front nonmetal area after doping is 90-110 ohms.
After boron doping, the PSG impurities generated during the doping process may still be removed using a hydrofluoric acid solution.
S108: and sequentially arranging a surface passivation layer and a surface electrode on the front surface and the back surface of the boron-doped solar cell front object to obtain the novel solar cell.
In a preferred embodiment, the surface passivation layer is a silicon nitride passivation layer which can be used as a cell surface passivation layer and an antireflection layer, the thickness of the silicon nitride layer on the front surface of the cell is controlled to be 75-85nm, and the thickness of the silicon nitride layer on the back surface of the cell is controlled to be 70-90 nm.
The surface electrode is a silver electrode provided by screen printing and sintering.
According to the preparation method of the solar cell, the front oxide layer and the back oxide layer are obtained by carrying out double-sided oxidation on the P-type substrate silicon; performing polycrystalline silicon deposition on the surfaces of the front-side oxide layer and the back-side oxide layer to obtain a front-side polycrystalline silicon layer and a back-side polycrystalline silicon layer; carrying out phosphorus diffusion on the back polycrystalline silicon layer to obtain an N-type doped polycrystalline silicon layer; arranging a protective layer on the surface of the N-type doped polycrystalline silicon layer to obtain a solar cell to be etched; setting a mask layer in a front metal area of the solar cell to be etched, and cleaning the solar cell to be etched so as to remove the front oxidation layer and the front polycrystalline silicon layer in the front non-metal area; removing the mask layer and the protective layer to obtain a solar cell front object; carrying out boron doping on the front side of the solar cell front object to obtain a highly doped front side polycrystalline silicon layer and a highly doped front side diffusion layer; and sequentially arranging a surface passivation layer and a surface electrode on the front surface and the back surface of the boron-doped solar cell front object to obtain the novel solar cell. In addition, after the emitter (namely the N-type doped polycrystalline silicon layer) is obtained, the emitter is immediately covered by the protective layer, so that the emitter is prevented from being damaged by subsequent treatment on other structures, the damage and the unevenness of the emitter caused by complex process and process precision are reduced, a process window is enlarged, the surface integrity of the emitter in the finished solar cell is ensured, and the power generation efficiency of the finished solar cell is improved.
On the basis of the first specific embodiment, the protective layer is further limited to obtain a second specific embodiment, a schematic flow diagram of which is shown in fig. 2, and includes:
s201: and carrying out double-sided oxidation on the P-type substrate silicon to obtain a front oxide layer and a back oxide layer.
S202: and carrying out polycrystalline silicon deposition on the surfaces of the front-side oxide layer and the back-side oxide layer to obtain a front-side polycrystalline silicon layer and a back-side polycrystalline silicon layer.
S203: and carrying out phosphorus diffusion on the back polycrystalline silicon layer to obtain an N-type doped polycrystalline silicon layer.
S204: and arranging a silicon oxynitride protective layer on the surface of the N-type doped polycrystalline silicon layer to obtain the solar cell to be etched.
S205: and arranging a mask layer in the front metal area of the solar cell to be etched, and cleaning the solar cell to be etched so as to remove the front oxidation layer and the front polycrystalline silicon layer in the front non-metal area.
S206: and removing the mask layer and the silicon oxynitride protection layer to obtain the solar cell front object.
S207: and carrying out boron doping on the front surface of the solar cell front object to obtain a highly doped front-side polycrystalline silicon layer and a highly doped front-side diffusion layer.
S208: and sequentially arranging a surface passivation layer and a surface electrode on the front surface and the back surface of the boron-doped solar cell front object to obtain the novel solar cell.
The difference between the present embodiment and the foregoing embodiment is that the type of the protection layer is specifically defined in the present embodiment, and the remaining steps are the same as those in the foregoing embodiment, and are not described herein again.
In the specific embodiment, the protective layer is limited to be the silicon oxynitride protective layer, and the silicon oxynitride protective layer is very easy to be removed through acid etching liquid except for the characteristics of compactness and good chemical stability and difficult corrosion, is convenient to clean, has less residue, and ensures the protection effect and the purity of a final finished product.
Still further, the silicon oxynitride protective layer has a thickness in a range from 50 nm to 80 nm, inclusive, such as any one of 50.0 nm, 63.2 nm, or 80.0 nm.
On the basis of the second specific embodiment, the protective layer is further limited to obtain a third specific embodiment, a schematic flow diagram of which is shown in fig. 3, and includes:
s301: and carrying out double-sided oxidation on the P-type substrate silicon to obtain a front oxide layer and a back oxide layer.
S302: and carrying out polycrystalline silicon deposition on the surfaces of the front-side oxide layer and the back-side oxide layer to obtain a front-side polycrystalline silicon layer and a back-side polycrystalline silicon layer.
S303: and carrying out phosphorus diffusion on the back polycrystalline silicon layer to obtain an N-type doped polycrystalline silicon layer.
S304: and arranging a silicon oxynitride protective layer on the surface of the N-type doped polycrystalline silicon layer to obtain the solar cell to be etched.
S305: and arranging a mask layer in the front metal area of the solar cell to be etched, and cleaning the solar cell to be etched so as to remove the front oxidation layer and the front polycrystalline silicon layer in the front non-metal area.
S306: and performing surface texturing on the cleaned front non-metal area of the solar cell to be etched.
S307: and removing the mask layer and the silicon oxynitride protection layer to obtain the solar cell front object.
S308: and carrying out boron doping on the front surface of the solar cell front object to obtain a highly doped front-side polycrystalline silicon layer and a highly doped front-side diffusion layer.
S309: and sequentially arranging a surface passivation layer and a surface electrode on the front surface and the back surface of the boron-doped solar cell front object to obtain the novel solar cell.
The difference between the present embodiment and the foregoing embodiment is that the front non-metal area is subjected to texturing in the present embodiment, and the remaining steps are the same as those in the foregoing embodiment, and are not described again here.
Get rid of before mask layer and protective layer in this embodiment, exposed positive non-metallic area outside the battery has carried out the surface system fine hair, greatly increased the regional light absorption ability of system fine hair, improved solar cell's generating efficiency, in addition, this embodiment only positive non-metallic area system fine hair, on the one hand, non-metallic area is far away than the metallic area, and the light absorption is respond well, and on the other hand, the metallic area surface is still smooth level and smooth, can form better contact effect with the epitaxial layer, and compound center is few, and battery open circuit voltage and short-circuit current are higher. Furthermore, the texturing is carried out in an alkali liquor system at the temperature of 80-85 ℃, and a textured surface with the emissivity of 10% -12% is formed on the front surface of the silicon wafer.
The invention also provides a novel solar cell, which is obtained by the preparation method of the novel solar cell. According to the preparation method of the solar cell, the front oxide layer and the back oxide layer are obtained by carrying out double-sided oxidation on the P-type substrate silicon; performing polycrystalline silicon deposition on the surfaces of the front-side oxide layer and the back-side oxide layer to obtain a front-side polycrystalline silicon layer and a back-side polycrystalline silicon layer; carrying out phosphorus diffusion on the back polycrystalline silicon layer to obtain an N-type doped polycrystalline silicon layer; arranging a protective layer on the surface of the N-type doped polycrystalline silicon layer to obtain a solar cell to be etched; setting a mask layer in a front metal area of the solar cell to be etched, and cleaning the solar cell to be etched so as to remove the front oxidation layer and the front polycrystalline silicon layer in the front non-metal area; removing the mask layer and the protective layer to obtain a solar cell front object; carrying out boron doping on the front side of the solar cell front object to obtain a highly doped front side polycrystalline silicon layer and a highly doped front side diffusion layer; and sequentially arranging a surface passivation layer and a surface electrode on the front surface and the back surface of the boron-doped solar cell front object to obtain the novel solar cell. In addition, after the emitter (namely the N-type doped polycrystalline silicon layer) is obtained, the emitter is immediately covered by the protective layer, so that the emitter is prevented from being damaged by subsequent treatment on other structures, the damage and the unevenness of the emitter caused by complex process and process precision are reduced, a process window is enlarged, the surface integrity of the emitter in the finished solar cell is ensured, and the power generation efficiency of the finished solar cell is improved.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device disclosed by the embodiment corresponds to the method disclosed by the embodiment, so that the description is simple, and the relevant points can be referred to the method part for description.
It is to be noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
The novel solar cell and the preparation method thereof provided by the invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.

Claims (10)

1. A preparation method of a novel solar cell is characterized by comprising the following steps:
carrying out double-sided oxidation on the P-type substrate silicon to obtain a front oxide layer and a back oxide layer;
performing polycrystalline silicon deposition on the surfaces of the front-side oxide layer and the back-side oxide layer to obtain a front-side polycrystalline silicon layer and a back-side polycrystalline silicon layer;
carrying out phosphorus diffusion on the back polycrystalline silicon layer to obtain an N-type doped polycrystalline silicon layer;
arranging a protective layer on the surface of the N-type doped polycrystalline silicon layer to obtain a solar cell to be etched;
setting a mask layer in a front metal area of the solar cell to be etched, and cleaning the solar cell to be etched so as to remove the front oxidation layer and the front polycrystalline silicon layer in the front non-metal area;
removing the mask layer and the protective layer to obtain a solar cell front object;
carrying out boron doping on the front side of the solar cell front object to obtain a highly doped front side polycrystalline silicon layer and a highly doped front side diffusion layer;
and sequentially arranging a surface passivation layer and a surface electrode on the front surface and the back surface of the boron-doped solar cell front object to obtain the novel solar cell.
2. The method of claim 1, wherein the protective layer is a silicon oxynitride protective layer.
3. The method of claim 2, wherein the protective layer of silicon oxynitride has a thickness in the range of 50 nm to 80 nm, inclusive.
4. The method for preparing the novel solar cell according to claim 1, further comprising, before the double-sided oxidation of the P-type base silicon:
and carrying out surface polishing on the P-type substrate silicon.
5. The method of claim 4, wherein the surface polishing the P-type base silicon comprises:
and carrying out alkali polishing on the P-type base silicon.
6. The method of claim 1, further comprising, after the phosphorus diffusion of the backside polysilicon layer:
and carrying out PSG cleaning on the N-type doped polycrystalline silicon layer.
7. The method according to claim 6, wherein the PSG cleaning of the N-doped polysilicon layer comprises:
and carrying out PSG cleaning on the N-type doped polycrystalline silicon layer by using hydrofluoric acid.
8. The method of claim 1, further comprising, after the cleaning the solar cell precursor:
and performing surface texturing on the front non-metal area.
9. The method of claim 1, wherein the surface passivation layer is a silicon nitride passivation layer.
10. A novel solar cell, characterized in that it is a solar cell obtained by the method for the preparation of a novel solar cell according to any one of claims 1 to 9.
CN202010469748.1A 2020-05-28 2020-05-28 Novel solar cell and preparation method thereof Pending CN111584685A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010469748.1A CN111584685A (en) 2020-05-28 2020-05-28 Novel solar cell and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202010469748.1A CN111584685A (en) 2020-05-28 2020-05-28 Novel solar cell and preparation method thereof

Publications (1)

Publication Number Publication Date
CN111584685A true CN111584685A (en) 2020-08-25

Family

ID=72123742

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010469748.1A Pending CN111584685A (en) 2020-05-28 2020-05-28 Novel solar cell and preparation method thereof

Country Status (1)

Country Link
CN (1) CN111584685A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113948611A (en) * 2021-10-15 2022-01-18 浙江爱旭太阳能科技有限公司 P-type IBC battery, preparation method and assembly thereof, and photovoltaic system
CN115377252A (en) * 2022-10-24 2022-11-22 英利能源发展(天津)有限公司 Method for inhibiting polycrystalline silicon surface explosion film growth by PECVD method

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014505377A (en) * 2011-02-15 2014-02-27 サンパワー コーポレイション Manufacturing method and structure of solar cell
CN204045609U (en) * 2014-09-12 2014-12-24 合肥海润光伏科技有限公司 A kind of back of the body passivation PERC crystal silicon solar energy battery
KR20150117034A (en) * 2014-04-09 2015-10-19 현대중공업 주식회사 Fabrication method of PERL solar cells of high efficiency and the resulting solar cell
CN105226115A (en) * 2015-09-07 2016-01-06 中国东方电气集团有限公司 A kind of N-type crystal silicon battery and preparation method thereof
CN106898658A (en) * 2015-12-21 2017-06-27 Lg电子株式会社 Solar cell and its manufacture method
US20180198002A1 (en) * 2017-01-06 2018-07-12 Lg Electronics Inc. Method for manufacturing solar cell
CN108666379A (en) * 2018-07-11 2018-10-16 泰州隆基乐叶光伏科技有限公司 A kind of p-type back contacts solar cell and preparation method thereof
CN110581198A (en) * 2019-09-05 2019-12-17 东方日升（常州）新能源有限公司 Local contact passivation solar cell and preparation method thereof
CN210575969U (en) * 2019-06-24 2020-05-19 泰州隆基乐叶光伏科技有限公司 P-type crystalline silicon solar cell

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014505377A (en) * 2011-02-15 2014-02-27 サンパワー コーポレイション Manufacturing method and structure of solar cell
KR20150117034A (en) * 2014-04-09 2015-10-19 현대중공업 주식회사 Fabrication method of PERL solar cells of high efficiency and the resulting solar cell
CN204045609U (en) * 2014-09-12 2014-12-24 合肥海润光伏科技有限公司 A kind of back of the body passivation PERC crystal silicon solar energy battery
CN105226115A (en) * 2015-09-07 2016-01-06 中国东方电气集团有限公司 A kind of N-type crystal silicon battery and preparation method thereof
CN106898658A (en) * 2015-12-21 2017-06-27 Lg电子株式会社 Solar cell and its manufacture method
US20180198002A1 (en) * 2017-01-06 2018-07-12 Lg Electronics Inc. Method for manufacturing solar cell
CN108666379A (en) * 2018-07-11 2018-10-16 泰州隆基乐叶光伏科技有限公司 A kind of p-type back contacts solar cell and preparation method thereof
CN210575969U (en) * 2019-06-24 2020-05-19 泰州隆基乐叶光伏科技有限公司 P-type crystalline silicon solar cell
CN110581198A (en) * 2019-09-05 2019-12-17 东方日升（常州）新能源有限公司 Local contact passivation solar cell and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113948611A (en) * 2021-10-15 2022-01-18 浙江爱旭太阳能科技有限公司 P-type IBC battery, preparation method and assembly thereof, and photovoltaic system
CN113948611B (en) * 2021-10-15 2023-12-01 浙江爱旭太阳能科技有限公司 P-type IBC battery, preparation method thereof, assembly and photovoltaic system
CN115377252A (en) * 2022-10-24 2022-11-22 英利能源发展(天津)有限公司 Method for inhibiting polycrystalline silicon surface explosion film growth by PECVD method

Similar Documents

Publication Publication Date Title
CN111540794B (en) P-type passivation contact solar cell and manufacturing method thereof
CN108666393B (en) Solar cell and preparation method thereof
JP6815532B2 (en) PERC solar cell capable of improving photoelectric conversion efficiency and its manufacturing method
CN111933752A (en) Solar cell and preparation method thereof
CN101814547A (en) Method for preparing selective emitter crystalline silicon solar cell
TWI550890B (en) Solar cell and method of manufacturing the same
CN110854240A (en) PERC battery and preparation method thereof
TW201236171A (en) Solar cell and solar-cell module
CN110690297A (en) P-type tunneling oxide passivation contact solar cell and preparation method thereof
CN105810779A (en) Preparation method of PERC solar cell
WO2024012162A1 (en) Manufacturing method for p-type ibc battery
CN210349847U (en) P-type tunneling oxide passivation contact solar cell
CN113328012A (en) Method for manufacturing PERC battery capable of reducing recombination rate and PERC battery
CN111584685A (en) Novel solar cell and preparation method thereof
CN116435409A (en) Heterojunction battery and preparation method thereof
CN111341880A (en) Method for manufacturing solar cell
CN210956692U (en) PERC battery
CN110444637B (en) Solar cell and manufacturing method thereof
CN113224210A (en) Preparation method of P-type IBC battery
CN114725225A (en) Efficient P-type IBC battery and preparation method thereof
CN113921649A (en) Preparation method of silicon-based heterojunction solar cell
CN115692516A (en) Novel TOPCON battery and manufacturing method thereof
CN115020508A (en) Full back contact solar cell and manufacturing method thereof
TW201308625A (en) Manufacturing method of back contact solar cells
US8445311B2 (en) Method of fabricating a differential doped solar cell

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20200825

RJ01 Rejection of invention patent application after publication