CN110581198A - Local contact passivation solar cell and preparation method thereof - Google Patents
Local contact passivation solar cell and preparation method thereof Download PDFInfo
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- CN110581198A CN110581198A CN201910837716.XA CN201910837716A CN110581198A CN 110581198 A CN110581198 A CN 110581198A CN 201910837716 A CN201910837716 A CN 201910837716A CN 110581198 A CN110581198 A CN 110581198A
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- 238000002161 passivation Methods 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 34
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000000151 deposition Methods 0.000 claims abstract description 27
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 22
- 238000009792 diffusion process Methods 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 14
- 239000011574 phosphorus Substances 0.000 claims abstract description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 238000007650 screen-printing Methods 0.000 claims abstract description 11
- 230000005641 tunneling Effects 0.000 claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052751 metal Inorganic materials 0.000 claims abstract description 8
- 239000002184 metal Substances 0.000 claims abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims abstract description 6
- 230000003647 oxidation Effects 0.000 claims abstract description 6
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000007639 printing Methods 0.000 claims description 3
- 239000005360 phosphosilicate glass Substances 0.000 claims 2
- 230000006798 recombination Effects 0.000 abstract description 5
- 238000005215 recombination Methods 0.000 abstract description 5
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 abstract description 2
- 238000003475 lamination Methods 0.000 abstract description 2
- 238000000059 patterning Methods 0.000 abstract description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 9
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 9
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a local contact passivation solar cell and a preparation method thereof, wherein the local contact passivation solar cell comprises the following steps: performing texturing treatment on a silicon wafer; respectively depositing a tunneling SiO layer on the front surface and the back surface of the silicon substrate by a thermal oxidation device2a film; depositing a phosphorus-doped microcrystalline silicon or amorphous silicon thin film; depositing a patterned mask material on the front side of the silicon wafer; secondary texturing; phosphorus diffusion; etching; growing a passivation layer; opening the film by laser; and (4) screen printing. The invention adopts the selective carrier transport characteristic of the microcrystalline silicon/silicon oxide lamination to realize contact passivation, so that ohmic contact of a metal electrode is ensured, and simultaneously metal area recombination is completely eliminated; the patterning of the microcrystalline silicon is realized by adopting a mask and secondary texturing, so that local contact passivation is formed, and parasitic absorption is reduced; and a lightly-expanded region is formed and the passivation of the microcrystalline silicon layer is activated at the same time by adopting one-step diffusion, so that the process is simplified. The invention is suitable for large-scale industrialized application, and can greatly improve the conversion efficiency of the batteryand the electricity consumption cost is reduced.
Description
Technical Field
the invention belongs to the technical field of solar cells, and particularly relates to a local contact passivation solar cell and a preparation method thereof.
Background
PERC, a passivated emitter and back-side cell technology, was first introduced in 1983 by the australian scientist Martin Green and is currently becoming the conventional technology for a new generation of solar cells. The PERC is constantly refreshed in recent years, and will become the most cost-effective technology in the last three years. PERC improves conversion efficiency by adding a dielectric passivation layer on the back side of the cell, better efficiency levels in standard cell structures are limited by the tendency of photogenerated electrons to recombine, PERC cells maximize the potential gradient across the P-N junction, which allows for more stable flow of electrons, reduces recombination of electrons, and higher efficiency levels.
The PERC battery is a mainstream production process at present and in the future due to its relatively simple process and high battery efficiency. At present, the mass production efficiency of the PERC battery in the industry is about 22%, and subsequently, the efficiency needs to be further improved to compete with high-efficiency batteries such as HIT and IBC. However, the back of the PERC cell in the prior art adopts alumina Al2O3passivation and low recombination, and the cell efficiency is limited by the cell front recombination, especially in the metal region, which has a saturation current density as high as 1000fA/cm2 or more.
Disclosure of Invention
In order to solve the problems, the invention provides a preparation method of a local contact passivation solar cell, which improves the cell efficiency.
The technical scheme of the invention is as follows: a method for preparing a local contact passivation solar cell comprises the following steps:
S1, texturing: performing texturing treatment on a silicon wafer;
S2, depositing tunneling silicon oxide: respectively depositing a tunneling SiO layer on the front surface and the back surface of the silicon substrate by a thermal oxidation device2A film;
S3, deposition of a doped microcrystalline silicon/amorphous silicon film: depositing a phosphorus-doped microcrystalline silicon or amorphous silicon thin film by adopting LPCVD equipment or PECVD equipment;
S4, mask preparation: depositing a patterned mask material on the front side of the silicon wafer;
S5, secondary texturing: etching the microcrystalline silicon/amorphous silicon film of the non-mask area and ensuring that the surface of the non-mask area is still in a pyramid shape;
S6, phosphorus diffusion: performing a phosphorus diffusion process to form a pn junction;
s7, etching: removing a pn junction area on the back, passing HF with the volume concentration of 5-15%, and removing the PSG on the surface;
S8, growth of a passivation layer: depositing an alumina film on the back surface, and then depositing SiN films on the back surface and the front surface respectively;
S9, laser film opening: opening the SiN film through laser to form a local aluminum back field and metal area ohmic contact;
S10, screen printing: and screen printing the main grid line and the auxiliary grid line.
preferably, the silicon wafer is a P-type monocrystalline silicon wafer. In the invention, a P-type monocrystalline silicon wafer is used as a silicon substrate.
preferably, in the step S1, during the texturing process, a KOH solution is used to perform the texturing process, the KOH solution is prepared from KOH, an additive and water according to a ratio of 20:3:160, the temperature is 80 ℃, and then the KOH solution is cleaned in an HF solution with a volume concentration of 2-5%. And cleaning the surface of the silicon wafer by using an HF solution.
Preferably, the tunneling SiO is performed in step S22the thickness of the film is less than 2nm, and the deposition temperature is 500-700 ℃. The oxidation process of the present invention is generally integrated into the LPCVD or PECVD apparatus used to deposit microcrystalline silicon thin films; the tunneling silicon oxide can also be grown by a chemical method, namely soaking in a nitric acid solution at the temperature of more than 70 ℃.
Preferably, in step S4, an ink jet device or a printing device is used to deposit a patterned mask material on the front surface of the silicon wafer.
preferably, in the step S5, when performing secondary texturing, a KOH solution is used for texturing, the KOH solution is prepared from KOH, an additive and water according to a mass ratio of 20:3:160, and the temperature is 80 ℃.
preferably, in the step S6, a phosphorus diffusion process is performed in a conventional phosphorus diffusion furnace at a diffusion temperature of 700 to 900 ℃ to form a sheet resistance of 100 to 200ohm/□. If the process in step S3 is PECVD equipment, the high temperature step of the phosphorous diffusion process will crystallize the amorphous silicon thin film into a microcrystalline silicon thin film, and the phosphorous diffusion process also serves to activate the passivation of the microcrystalline silicon thin film.
Preferably, in step S8, the alumina thin film has a thickness of 2 to 25nm, the SiN thin film on the back surface has a thickness of 100 to 120nm, and the SiN thin film on the front surface has a thickness of 80 nm.
In the present invention, when performing screen printing and sintering according to the screen pattern, preferably, the width of the front grid line is less than 50 μm and the height is greater than 5 μm when performing screen printing in step S10, and the peak temperature is 760 ℃ and the time is 40 seconds when performing sintering.
The invention also provides a local contact passivation solar cell prepared by the preparation method.
compared with the prior art, the invention has the beneficial effects that:
The invention adopts the selective carrier transport characteristic of the microcrystalline silicon/silicon oxide lamination to realize contact passivation, so that ohmic contact of a metal electrode is ensured, and simultaneously metal area recombination is completely eliminated; the patterning of the microcrystalline silicon is realized by adopting a mask and secondary texturing, so that local contact passivation is formed, and parasitic absorption is reduced; and a lightly-expanded region is formed and the passivation of the microcrystalline silicon layer is activated at the same time by adopting one-step diffusion, so that the process is simplified. The invention is suitable for large-scale industrial application, can greatly improve the conversion efficiency of the battery and reduce the electricity consumption cost.
Detailed Description
Example 1
A method for preparing a local contact passivation solar cell comprises the following steps:
S1, texturing: with a P-type monocrystalline silicon wafer as a silicon substrate, a texturing process is first performed using a solution, typically a KOH solution, typically in terms of KOH: additive: H2O is prepared according to the mass ratio of 20:3:160, and the temperature is 80 ℃. Then cleaning the silicon wafer in an HF solution with the volume concentration of 2-5%, and cleaning the surface of the silicon wafer;
S2, depositing tunneling silicon oxide: depositing a thin tunneling SiO2 film on two sides of a silicon wafer by adopting a thermal oxidation device, controlling the thickness to be less than 2nm, and the deposition temperature to be between 500 ℃ and 700 ℃, wherein the oxidation process is usually integrated in LPCVD or PECVD equipment for depositing a microcrystalline silicon film; the tunneling silicon oxide can also be grown by a chemical method, namely soaking in nitric acid solution with the temperature of above 70 ℃.
S3, deposition of a doped microcrystalline silicon/amorphous silicon film: depositing the phosphorus-doped microcrystalline silicon or amorphous silicon thin film by using an LPCVD (low pressure chemical vapor deposition) device or a PECVD (plasma enhanced chemical vapor deposition) device.
S4, mask preparation: and depositing a patterned mask material on the front surface of the silicon wafer by using ink jet equipment or printing equipment.
S5, secondary texturing: the solution used is typically a KOH solution, typically in terms of KOH: additive: H2O was prepared at a ratio of 20:3:160 at 80 ℃. The secondary texturing will etch the microcrystalline silicon/amorphous silicon film in the unmasked areas and ensure that the unmasked areas remain pyramidal in shape.
s6, phosphorus diffusion: in a traditional phosphorus diffusion furnace tube, a phosphorus diffusion process is carried out to form a pn junction. The diffusion temperature is between 700-900 ℃, and the formed sheet resistance range is 100-200ohm/□. If the 3 rd step process adopts PECVD equipment, the high-temperature step of the phosphorus diffusion process can crystallize the amorphous silicon film into a microcrystalline silicon film, and meanwhile, the phosphorus diffusion process also plays a role in activating the passivation of the microcrystalline silicon film.
S7, etching: and removing the pn junction area on the back surface. And (5) HF (hydrogen fluoride) is carried out, and the PSG on the surface is removed.
s8, growth of a passivation layer: and depositing an alumina film with the thickness of 2-25nm on the back surface of the cell by using an ALD or PECVD device. Then, back and front SiN films are respectively deposited, wherein the back SiN film is 100-120nm thick, and the front SiN film is about 80nm thick.
s9, laser film opening: the SiN film is opened by laser to form local aluminum back field and metal area ohmic contact.
S10, screen printing: when screen printing and sintering are carried out according to the screen printing plate pattern, the width of the grid line on the front surface is controlled to be less than 50 mu m, and the height is controlled to be more than 5 mu m. The sintering peak temperature is about 760 ℃ and the time is 40 seconds.
Through tests, the open voltage of the battery prepared by the process can reach more than 690mV, the open voltage is increased by about 10mV relative to a main current PERC battery, due to the fact that j02 is reduced, FF is also increased by about 1% relative to the PERC battery, short-circuit current is reduced due to parasitic absorption of a polycrystalline silicon thin film, and finally the efficiency gain of the battery is 0.4-0.5%.
Claims (10)
1. A method for preparing a local contact passivation solar cell is characterized by comprising the following steps:
S1, texturing: performing texturing treatment on a silicon wafer;
S2, depositing tunneling silicon oxide: respectively depositing a tunneling SiO layer on the front surface and the back surface of the silicon substrate by a thermal oxidation device2A film;
S3, deposition of a doped microcrystalline silicon/amorphous silicon film: depositing a phosphorus-doped microcrystalline silicon or amorphous silicon thin film by adopting LPCVD equipment or PECVD equipment;
s4, mask preparation: depositing a patterned mask material on the front side of the silicon wafer;
s5, secondary texturing: etching the microcrystalline silicon/amorphous silicon film of the non-mask area and ensuring that the surface of the non-mask area is still in a pyramid shape;
S6, phosphorus diffusion: performing a phosphorus diffusion process to form a pn junction;
S7, etching: removing the pn junction area on the back, passing HF, and removing the phosphosilicate glass (PSG) on the surface;
S8, growth of a passivation layer: depositing an alumina film on the back surface, and then depositing SiN films on the back surface and the front surface respectively;
S9, laser film opening: opening the SiN film through laser to form a local aluminum back field and metal area ohmic contact;
s10, screen printing: and screen printing the main grid line and the auxiliary grid line.
2. The method of claim 1, wherein the silicon wafer is a P-type monocrystalline silicon wafer.
3. The method according to claim 1 or 2, wherein during the texturing process in step S1, a KOH solution is used to perform the texturing process, the KOH solution is prepared from KOH, an additive and water according to a mass ratio of 20:3:160, the temperature is 80 ℃, and then the cleaning process is performed in an HF solution with a volume concentration of 2-5%.
4. the method of claim 1 or 2, wherein the tunneling SiO is formed in step S22the thickness of the film is less than 2nm, and the deposition temperature is 500-700 ℃.
5. The method for preparing a local contact passivation solar cell according to claim 1 or 2, wherein in step S4, an ink jet device or a printing device is used to deposit a patterned mask material on the front side of the silicon wafer.
6. the method according to claim 1 or 2, wherein during the secondary texturing in step S5, a KOH solution is used for texturing, the KOH solution is prepared from KOH, an additive and water according to a mass ratio of 20:3:160, and the temperature is 80 ℃.
7. The method according to claim 1 or 2, wherein in step S6, a phosphorus diffusion process is performed in a conventional phosphorus diffusion furnace at a diffusion temperature of 700-900 ℃ to form a sheet resistance of 100-200ohm/□.
8. the method according to claim 1 or 2, wherein in step S8, the thickness of the alumina film is 2-25nm, the thickness of the SiN film on the back side is 100-120nm, and the thickness of the SiN film on the front side is 80 nm.
9. The method of claim 1 or 2, wherein the step S10 is performed by screen printing, wherein the width of the grid line on the front surface is less than 50 μm, the height is greater than 5 μm, the peak temperature is 760 ℃ during sintering, and the time is 40 seconds.
10. A local contact passivation solar cell prepared by the method for preparing the local contact passivation solar cell according to any one of claims 1 to 9.
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Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993744A (en) * | 2019-12-26 | 2020-04-10 | 浙江晶科能源有限公司 | Preparation method of P-type passivated contact battery |
| CN111180555A (en) * | 2020-03-04 | 2020-05-19 | 泰州中来光电科技有限公司 | Preparation method of passivated contact battery based on PERC |
| CN111584685A (en) * | 2020-05-28 | 2020-08-25 | 江西展宇新能科技有限公司 | Novel solar cell and preparation method thereof |
| CN112599616A (en) * | 2020-12-15 | 2021-04-02 | 泰州隆基乐叶光伏科技有限公司 | Solar cell and manufacturing method thereof |
| CN112968074A (en) * | 2021-02-02 | 2021-06-15 | 通威太阳能（合肥）有限公司 | Preparation method of selective passivation contact battery |
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