CN105355707A - Efficient crystalline silicon solar cell and preparation method therefor - Google Patents
Efficient crystalline silicon solar cell and preparation method therefor Download PDFInfo
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- CN105355707A CN105355707A CN201510662815.0A CN201510662815A CN105355707A CN 105355707 A CN105355707 A CN 105355707A CN 201510662815 A CN201510662815 A CN 201510662815A CN 105355707 A CN105355707 A CN 105355707A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 132
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 132
- 239000010703 silicon Substances 0.000 claims abstract description 132
- 238000009792 diffusion process Methods 0.000 claims abstract description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 25
- 239000011574 phosphorus Substances 0.000 claims abstract description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000005498 polishing Methods 0.000 claims abstract description 12
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 10
- 238000007639 printing Methods 0.000 claims abstract description 8
- 238000005245 sintering Methods 0.000 claims abstract description 8
- 239000011267 electrode slurry Substances 0.000 claims abstract description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 36
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 36
- 239000013078 crystal Substances 0.000 claims description 28
- 210000002268 wool Anatomy 0.000 claims description 28
- 235000008216 herbs Nutrition 0.000 claims description 27
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 24
- 229910052760 oxygen Inorganic materials 0.000 claims description 24
- 239000001301 oxygen Substances 0.000 claims description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052757 nitrogen Inorganic materials 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 12
- 239000003595 mist Substances 0.000 claims description 12
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 12
- 239000000377 silicon dioxide Substances 0.000 claims description 11
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- 238000009423 ventilation Methods 0.000 claims description 6
- 238000010792 warming Methods 0.000 claims description 6
- 230000006798 recombination Effects 0.000 abstract description 4
- 238000005215 recombination Methods 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 abstract description 2
- 239000007888 film coating Substances 0.000 abstract 1
- 238000009501 film coating Methods 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 238000002310 reflectometry Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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Abstract
The invention discloses an efficient crystalline silicon solar cell and a preparation method therefor. The preparation method comprises the following steps: step 1, performing double-sided polishing on a silicon wafer; step 2, performing high sheet-resistance phosphorus diffusion on the front surface of the silicon wafer; step 3, removing phosphorosilicate glass in the front surface and peripheral PN junctions formed by the phosphorus diffusion; step 4, growing an oxide layer on the front surface of the silicon wafer; step 5, performing RIE texturing on the oxide layer on the front surface of the silicon wafer; step 6, removing affected layers after RIE texturing; step 7, performing PECVD film coating on the front surface of the silicon wafer to form a silicon nitride anti-reflection film; step 8, printing a back electrode and a back electric field on the back surface of the silicon wafer; step 9, printing positive electrode slurry on the front surface of the silicon wafer to form a positive electrode; and step 10, sintering the silicon wafer to form the solar cell. Compared with the prior art, the problems of the increase of recombination rate and uneven diffusion on the silicon surface caused by the direct silicon surface texturing are solved in the preparation method; and the preparation method has the advantage that the photoelectric conversion efficiency of the cell is effectively improved.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly relate to a kind of efficient crystal silicon solar batteries and preparation method thereof.
Background technology
Crystal silicon solar batteries is that one absorbs solar radiant energy effectively, utilize photovoltaic effect that transform light energy is become the device of electric energy, when solar irradiation is in semiconductor P-N junction (P-NJunction), form new hole-electron to (V-Epair), under the effect of P-N junction electric field, hole flows to P district by N district, and electronics flows to N district by P district, just forms electric current after connecting circuit.
The preparation technology of crystal silicon solar batteries is divided into making herbs into wool, diffusion, etching, front plated film, silk screen printing, the large operation of sintering six.Wherein, the object of making herbs into wool forms rough texturing suede structure at front side of silicon wafer, increases the absorption area of sunlight, reduces sun light reflectance.Be all adopt the mode of whole acid system making herbs into wool to polycrystalline silicon surface wool manufacturing in industry, while reduction reflectivity, the few sub-compound of silicon chip surface also increases greatly, constrains the lifting of battery open circuit voltage and short circuit current.Manufacturing process due to existing crystal silicon battery is that rough silicon face brings serious few sub-compound, constrains the raising of battery open circuit voltage and short circuit current directly in silicon face making herbs into wool; Matte spreads, also causes very poor sheet resistance uniformity, thus affect the photoelectric conversion efficiency of battery.
Summary of the invention
Technical problem to be solved by this invention is, a kind of efficient crystal silicon solar batteries and preparation method thereof is provided, the silicon face recombination rate directly caused in silicon face making herbs into wool can be avoided to increase and spread uneven problem, promote the photoelectric efficiency of crystal silicon solar batteries.
In order to solve the problems of the technologies described above, the invention provides a kind of preparation method of efficient crystal silicon solar batteries, comprising the following steps:
Step one: twin polishing is carried out to silicon chip;
Step 2: carry out the diffusion of high square resistance phosphorus at front side of silicon wafer;
Step 3: the front phosphorosilicate glass that removal phosphorus diffuses to form and periphery P N knot;
Step 4: in front side of silicon wafer growth oxide layer;
Step 5: carry out RIE making herbs into wool in the oxide layer of front side of silicon wafer;
Step 6: remove the damage layer after RIE making herbs into wool;
Step 7: carry out PECVD plated film at described front side of silicon wafer, forms silicon nitride anti-reflection film;
Step 8: in silicon chip back side printing back electrode and aluminium back surface field;
Step 9: form positive electrode at front side of silicon wafer print positive electrode slurry;
Step 10: sintering is carried out to silicon chip and forms solar cell.
Preferably, described step one adopts NaOH solution to silicon chip twin polishing, and the concentration of NaOH solution is 10%-30%.
Preferably, the high square resistance phosphorus diffusion in described step 2 adopts tubular type phosphorus oxychloride method of diffusion to silicon chip surface doping high square resistance phosphorus.
Preferably, described step 3 adopts HF, H
2sO
4and HNO
3mixed acid remove the front phosphorosilicate glass that diffuses to form of phosphorus and periphery P N knot.
Preferably, the front side of silicon wafer oxidation in described step 4 adopts furnace oxidation mode, and be positioned over by silicon chip in diffusion furnace and pass into nitrogen and oxygen, after being warming up to 800-900 DEG C, silicon chip and oxygen reaction generate silicon dioxide.
Preferably, the flow of described oxygen and nitrogen is respectively 500-1000sccm and 5-10slm, and the duration of ventilation of the mist of oxygen and nitrogen is 5-30min.
Preferably, the RIE making herbs into wool in described step 5, adopts CF
4, H
2and CHF
3mist as etching gas, form needle-like matte at silicon chip surface.
Preferably, described step 6 adopts HF and HNO
3mixed acid front side of silicon wafer is corroded, remove the damage layer after RIE making herbs into wool.
Preferably, described step 7 adopts the method silicon nitride film of PECVD, and the refractive index of silicon nitride film is 2.0-2.5, and thickness is 50nm-200nm.
Correspondingly, the present invention also provides a kind of efficient crystal silicon solar batteries, and it is obtained by above-mentioned preparation method.
Compared with prior art, the present invention has following beneficial effect: the present invention carries out phosphorus diffusion on silicon wafer polishing face, obtain the PN junction that uniformity is good, then silicon dioxide passivation diffusingsurface is adopted, front side of silicon wafer is made to have lower recombination-rate surface, do RIE making herbs into wool on silica again, reach the object reducing reflectivity.Instant invention overcomes the silicon face recombination rate directly caused in silicon face making herbs into wool increase and spread uneven problem, promote the photoelectric conversion efficiency of crystal silicon solar batteries.
Accompanying drawing explanation
Fig. 1 is a kind of efficient crystal silicon solar batteries preparation method flow chart;
Fig. 2 is the structural representation of the efficient crystal silicon solar batteries of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail.
The preparation process of efficient crystal silicon solar batteries of the present invention is specific as follows:
Step S100: twin polishing is carried out to silicon chip;
This step adopts NaOH solution to silicon chip twin polishing, and the concentration of NaOH solution is 10%-30%.
Step S101: carry out the diffusion of high square resistance phosphorus at front side of silicon wafer;
The high square resistance phosphorus diffusion of this step adopts tubular type phosphorus oxychloride method of diffusion to silicon chip surface doping high square resistance phosphorus.
Step S102: the front phosphorosilicate glass that removal phosphorus diffuses to form and periphery P N knot;
This step adopts HF, H
2sO
4and HNO
3mixed acid remove the front phosphorosilicate glass that diffuses to form of phosphorus and periphery P N knot.
Step S103: in front side of silicon wafer growth oxide layer;
The front side of silicon wafer oxidation of this step adopts furnace oxidation mode, and be positioned over by silicon chip in diffusion furnace and pass into nitrogen and oxygen, after being warming up to 800-900 DEG C, silicon chip and oxygen reaction generate silicon dioxide; The flow of oxygen and nitrogen is respectively 500-1000sccm, the accurate ml/min of sccm and 5-10slm, sccm index, and slm refers to standard liter/min, and the duration of ventilation of the mist of oxygen and nitrogen is 5-30min.
Step S104: carry out RIE making herbs into wool in the oxide layer of front side of silicon wafer;
RIE making herbs into wool in this step adopts CF
4, H
2and CHF
3mist as etching gas, form needle-like matte at silicon chip surface.
Step S105: remove the damage layer after RIE making herbs into wool;
This step adopts HF and HNO
3mixed acid front side of silicon wafer is corroded, remove the damage layer after RIE making herbs into wool.
Step S106: carry out PECVD plated film at described front side of silicon wafer, forms silicon nitride anti-reflection film;
This step adopts the method silicon nitride film of PECVD, and the refractive index of silicon nitride film is 2.0-2.5, and thickness is 50nm-200nm.
Step S107: in silicon chip back side printing back electrode and aluminium back surface field;
Step S108: form positive electrode at front side of silicon wafer print positive electrode slurry;
Step S109: sintering is carried out to silicon chip and forms solar cell.
As shown in Figure 2, the efficient crystal silicon solar batteries of one that preparation method of the present invention obtains comprises positive electrode 1, silicon nitride film 2, silicon dioxide 3, N-type silicon 4, P-type silicon substrate 5, aluminium back surface field 6 and back electrode 7 from top to bottom successively.
Compared with prior art, the present invention has following beneficial effect: the present invention carries out phosphorus diffusion on silicon wafer polishing face, obtain the PN junction that uniformity is good, then silicon dioxide passivation diffusingsurface is adopted, front side of silicon wafer is made to have lower recombination-rate surface, do RIE making herbs into wool on silica again, reach the object reducing reflectivity.Instant invention overcomes the silicon face recombination rate directly caused in silicon face making herbs into wool increase and spread uneven problem, promote the photoelectric conversion efficiency of crystal silicon solar batteries.
The present invention is further described below with specific embodiment:
Embodiment 1
A preparation method for efficient crystal silicon solar batteries, comprises the following steps:
A: adopt NaOH solution to silicon chip twin polishing, the concentration of NaOH solution is 10%.
B: adopt tubular type phosphorus oxychloride method of diffusion to carry out the diffusion of high square resistance phosphorus at front side of silicon wafer;
C: adopt HF, H
2sO
4and HNO
3mixed acid remove the front phosphorosilicate glass that diffuses to form of phosphorus and periphery P N knot;
D: adopt furnace oxidation mode to grow oxide layer at front side of silicon wafer, be positioned over by silicon chip in diffusion furnace and pass into nitrogen and oxygen, after being warming up to 800 DEG C, silicon chip and oxygen reaction generate silicon dioxide; The flow of oxygen and nitrogen is respectively 500sccm and 5slm, and the duration of ventilation of the mist of oxygen and nitrogen is 5min;
E: adopt CF
4, H
2and CHF
3mist in the oxide layer of front side of silicon wafer, carry out RIE making herbs into wool as etching gas;
F: adopt HF and HNO
3mixed acid front side of silicon wafer is corroded, remove the damage layer after RIE making herbs into wool;
G: the method silicon nitride film adopting PECVD at described front side of silicon wafer, form silicon nitride anti-reflection film, the refractive index of silicon nitride film is 2.0, and thickness is 50nm.
F: in silicon chip back side printing back electrode and aluminium back surface field;
G: form positive electrode at front side of silicon wafer print positive electrode slurry;
H: sintering is carried out to silicon chip and forms solar cell.
Embodiment 2
A preparation method for efficient crystal silicon solar batteries, comprises the following steps:
A: adopt NaOH solution to silicon chip twin polishing, the concentration of NaOH solution is 20%.
B: adopt tubular type phosphorus oxychloride method of diffusion to carry out the diffusion of high square resistance phosphorus at front side of silicon wafer;
C: adopt HF, H
2sO
4and HNO
3mixed acid remove the front phosphorosilicate glass that diffuses to form of phosphorus and periphery P N knot;
D: adopt furnace oxidation mode to grow oxide layer at front side of silicon wafer, be positioned over by silicon chip in diffusion furnace and pass into nitrogen and oxygen, after being warming up to 850 DEG C, silicon chip and oxygen reaction generate silicon dioxide; The flow of oxygen and nitrogen is respectively 750sccm and 8slm, and the duration of ventilation of the mist of oxygen and nitrogen is 18min;
E: adopt CF
4, H
2and CHF
3mist in the oxide layer of front side of silicon wafer, carry out RIE making herbs into wool as etching gas;
F: adopt HF and HNO
3mixed acid front side of silicon wafer is corroded, remove the damage layer after RIE making herbs into wool;
G: the method silicon nitride film adopting PECVD at described front side of silicon wafer, form silicon nitride anti-reflection film, the refractive index of silicon nitride film is 2.3, and thickness is 125nm.
F: in silicon chip back side printing back electrode and aluminium back surface field;
G: form positive electrode at front side of silicon wafer print positive electrode slurry;
H: sintering is carried out to silicon chip and forms solar cell.
Embodiment 3
A preparation method for efficient crystal silicon solar batteries, comprises the following steps:
A: adopt NaOH solution to silicon chip twin polishing, the concentration of NaOH solution is 30%.
B: adopt tubular type phosphorus oxychloride method of diffusion to carry out the diffusion of high square resistance phosphorus at front side of silicon wafer;
C: adopt HF, H
2sO
4and HNO
3mixed acid remove the front phosphorosilicate glass that diffuses to form of phosphorus and periphery P N knot;
D: adopt furnace oxidation mode to grow oxide layer at front side of silicon wafer, be positioned over by silicon chip in diffusion furnace and pass into nitrogen and oxygen, after being warming up to 900 DEG C, silicon chip and oxygen reaction generate silicon dioxide; The flow of oxygen and nitrogen is respectively 1000sccm and 10slm, and the duration of ventilation of the mist of oxygen and nitrogen is 30min;
E: adopt CF
4, H
2and CHF
3mist in the oxide layer of front side of silicon wafer, carry out RIE making herbs into wool as etching gas;
F: adopt HF and HNO
3mixed acid front side of silicon wafer is corroded, remove the damage layer after RIE making herbs into wool;
G: the method silicon nitride film adopting PECVD at described front side of silicon wafer, form silicon nitride anti-reflection film, the refractive index of silicon nitride film is 2.5, and thickness is 200nm.
F: in silicon chip back side printing back electrode and aluminium back surface field;
G: form positive electrode at front side of silicon wafer print positive electrode slurry;
H: sintering is carried out to silicon chip and forms solar cell.
Finally to should be noted that; above embodiment is only in order to illustrate technical scheme of the present invention but not limiting the scope of the invention; although be explained in detail the present invention with reference to preferred embodiment; those of ordinary skill in the art is to be understood that; can modify to technical scheme of the present invention or equivalent replacement, and not depart from essence and the scope of technical solution of the present invention.
Claims (10)
1. a preparation method for efficient crystal silicon solar batteries, is characterized in that, comprises the following steps:
Step one: twin polishing is carried out to silicon chip;
Step 2: carry out the diffusion of high square resistance phosphorus at front side of silicon wafer;
Step 3: the front phosphorosilicate glass that removal phosphorus diffuses to form and periphery P N knot;
Step 4: in front side of silicon wafer growth oxide layer;
Step 5: carry out RIE making herbs into wool in the oxide layer of front side of silicon wafer;
Step 6: remove the damage layer after RIE making herbs into wool;
Step 7: carry out PECVD plated film at described front side of silicon wafer, forms silicon nitride anti-reflection film;
Step 8: in silicon chip back side printing back electrode and aluminium back surface field;
Step 9: form positive electrode at front side of silicon wafer print positive electrode slurry;
Step 10: sintering is carried out to silicon chip and forms solar cell.
2. the preparation method of a kind of efficient crystal silicon solar batteries as claimed in claim 1, it is characterized in that, described step one adopts NaOH solution to silicon chip twin polishing, and the concentration of NaOH solution is 10%-30%.
3. the preparation method of a kind of efficient crystal silicon solar batteries as claimed in claim 1, is characterized in that, the high square resistance phosphorus diffusion in described step 2 adopts tubular type phosphorus oxychloride method of diffusion to silicon chip surface doping high square resistance phosphorus.
4. the preparation method of a kind of efficient crystal silicon solar batteries as claimed in claim 1, is characterized in that, described step 3 adopts HF, H
2sO
4and HNO
3mixed acid remove the front phosphorosilicate glass that diffuses to form of phosphorus and periphery P N knot.
5. the preparation method of a kind of efficient crystal silicon solar batteries as claimed in claim 1, it is characterized in that, front side of silicon wafer oxidation in described step 4 adopts furnace oxidation mode, silicon chip is positioned in diffusion furnace and passes into nitrogen and oxygen, after being warming up to 800-900 DEG C, silicon chip and oxygen reaction generate silicon dioxide.
6. the preparation method of a kind of efficient crystal silicon solar batteries as claimed in claim 5, it is characterized in that, the flow of described oxygen and nitrogen is respectively 500-1000sccm and 5-10slm, and the duration of ventilation of the mist of oxygen and nitrogen is 5-30min.
7. the preparation method of a kind of efficient crystal silicon solar batteries as claimed in claim 1, is characterized in that, the RIE making herbs into wool in described step 5, adopts CF
4, H
2and CHF
3mist as etching gas, form needle-like matte at silicon chip surface.
8. the preparation method of a kind of efficient crystal silicon solar batteries as claimed in claim 1, is characterized in that, described step 6 adopts HF and HNO
3mixed acid front side of silicon wafer is corroded, remove the damage layer after RIE making herbs into wool.
9. the preparation method of a kind of efficient crystal silicon solar batteries as claimed in claim 1, is characterized in that, described step 7 adopts the method silicon nitride film of PECVD, and the refractive index of silicon nitride film is 2.0-2.5, and thickness is 50nm-200nm.
10. an efficient crystal silicon solar batteries, is characterized in that, it is obtained by the preparation method described in any one of claim 1-9.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107393976A (en) * | 2017-08-02 | 2017-11-24 | 浙江晶科能源有限公司 | A kind of N-type double-sided solar battery piece and preparation method thereof |
| CN108666243A (en) * | 2018-05-09 | 2018-10-16 | 永嘉利为新能源有限公司 | A kind of etching method of single crystal battery piece |
| CN109390435A (en) * | 2018-12-03 | 2019-02-26 | 乐山新天源太阳能科技有限公司 | Nitrogen and the unidirectional mixing arrangement of oxygen for the anti-PID equipment of solar battery |
| CN110148635A (en) * | 2019-04-28 | 2019-08-20 | 北京点域科技有限公司 | A kind of process flow reducing surface recombination anti-reflection film battery |
| CN111554771A (en) * | 2019-01-24 | 2020-08-18 | 比亚迪股份有限公司 | Preparation method of solar cell, solar cell and solar cell |
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| CN107393976B (en) * | 2017-08-02 | 2019-05-10 | 浙江晶科能源有限公司 | A kind of N-type double-sided solar battery piece and preparation method thereof |
| CN108666243A (en) * | 2018-05-09 | 2018-10-16 | 永嘉利为新能源有限公司 | A kind of etching method of single crystal battery piece |
| CN109390435A (en) * | 2018-12-03 | 2019-02-26 | 乐山新天源太阳能科技有限公司 | Nitrogen and the unidirectional mixing arrangement of oxygen for the anti-PID equipment of solar battery |
| CN109390435B (en) * | 2018-12-03 | 2024-01-26 | 乐山新天源太阳能科技有限公司 | Nitrogen and oxygen unidirectional mixing device for PID (potential induced degradation) resistant equipment of solar cell |
| CN111554771A (en) * | 2019-01-24 | 2020-08-18 | 比亚迪股份有限公司 | Preparation method of solar cell, solar cell and solar cell |
| CN110148635A (en) * | 2019-04-28 | 2019-08-20 | 北京点域科技有限公司 | A kind of process flow reducing surface recombination anti-reflection film battery |
| CN112582484A (en) * | 2020-12-15 | 2021-03-30 | 泰州隆基乐叶光伏科技有限公司 | Solar cell and manufacturing method thereof |
| CN113223953A (en) * | 2021-03-31 | 2021-08-06 | 青岛惠科微电子有限公司 | Manufacturing method and manufacturing equipment of fast recovery chip and fast recovery chip |
| CN114038920A (en) * | 2021-09-17 | 2022-02-11 | 普乐新能源科技(徐州)有限公司 | Ultra-efficient interdigital back contact heterojunction solar cell |
| CN114038920B (en) * | 2021-09-17 | 2024-01-26 | 普乐新能源科技(泰兴)有限公司 | Ultra-efficient interdigital back contact heterojunction solar cell |
| CN114277356A (en) * | 2021-12-23 | 2022-04-05 | 晋能清洁能源科技股份公司 | Method for depositing silicon nitride film by polycrystalline silicon solar cell |
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