CN105097963A - Selectively textured crystal silicon solar cell and preparation method thereof - Google Patents
Selectively textured crystal silicon solar cell and preparation method thereof Download PDFInfo
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- CN105097963A CN105097963A CN201510423095.2A CN201510423095A CN105097963A CN 105097963 A CN105097963 A CN 105097963A CN 201510423095 A CN201510423095 A CN 201510423095A CN 105097963 A CN105097963 A CN 105097963A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 108
- 239000010703 silicon Substances 0.000 title claims abstract description 108
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 108
- 239000013078 crystal Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 27
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 27
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 25
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 25
- 239000011574 phosphorus Substances 0.000 claims abstract description 25
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 239000002002 slurry Substances 0.000 claims abstract description 17
- 239000002253 acid Substances 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 10
- 238000007639 printing Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000005245 sintering Methods 0.000 claims abstract description 5
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 239000011267 electrode slurry Substances 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims abstract description 4
- 210000002268 wool Anatomy 0.000 claims description 35
- 235000008216 herbs Nutrition 0.000 claims description 34
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 12
- 230000003647 oxidation Effects 0.000 claims description 12
- 238000007254 oxidation reaction Methods 0.000 claims description 12
- 229910052760 oxygen Inorganic materials 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000003854 Surface Print Methods 0.000 claims description 3
- 238000002835 absorbance Methods 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 239000003595 mist Substances 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000009423 ventilation Methods 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a preparation method of a selectively textured crystal silicon solar cell. The method comprises the following steps: (1) cleaning a silicon wafer; (2) forming a silicon dioxide layer on the front surface of the silicon wafer; (3) printing corrosive slurry on the silicon dioxide layer; (4) removing the silicon dioxide layer in a printing region of the corrosive slurry; (5) carrying out acid texturing on the silicon wafer, forming the surface of the region corresponding to a positive electrode grid line into a smooth surface, and forming the other regions into a textured structure; (6) carrying out high-sheet resistance phosphorus diffusion on the front surface of the silicon wafer, so that the surface of the region corresponding to the positive electrode grid line has uniform high-sheet resistance phosphorus doping concentration; (7) removing front phosphorosilicate glass and peripheral PN junctions, which are formed by phosphorus diffusion; (8) forming an anti-reflection film on the front surface of the silicon wafer; (9) printing a back electrode and an aluminium-back surface field on the back surface of the silicon wafer; (10) printing positive electrode slurry on the front surface of the silicon wafer to form a positive electrode; and (11) sintering the silicon wafer to form the solar cell. The preparation method of the selectively textured crystal silicon solar cell has the beneficial effect that the photoelectric conversion efficiency of the cell is effectively improved.
Description
Technical field
The present invention relates to technical field of solar batteries, particularly relate to a kind of selectivity making herbs into wool crystal silicon solar batteries and preparation method thereof.
Background technology
Crystal silicon solar batteries is that one absorbs solar radiant energy effectively, utilize photovoltaic effect that transform light energy is become the device of electric energy, when solar irradiation is in semiconductor P-N junction (P-NJunction), form new hole-electron to (V-Epair), under the effect of P-N junction electric field, hole flows to P district by N district, and electronics flows to N district by P district, just forms electric current after connecting circuit.
The preparation technology of crystal silicon solar batteries is divided into making herbs into wool, diffusion, etching, front plated film, silk screen printing, the large operation of sintering six.Wherein, the object of making herbs into wool forms rough texturing suede structure at front side of silicon wafer, increases the absorption area of sunlight, reduces sun light reflectance.Be all adopt the mode of whole acid system making herbs into wool to polycrystalline silicon surface wool manufacturing in industry, while reduction reflectivity, the few sub-compound of silicon chip surface also increases greatly, constrains the lifting of battery open circuit voltage and short circuit current.In addition, because the surface of the positive electrode corresponding region on silicon chip is making herbs into wool face, phosphorus source doping uneven concentration, have impact on the ohmic contact of electrode and silicon, thus constrains the lifting of photoelectric conversion efficiency.
Summary of the invention
Technical problem to be solved by this invention is, a kind of selectivity making herbs into wool crystal silicon solar batteries and preparation method thereof is provided, effectively can reduce the few sub-recombination region of battery surface, strengthen the ohmic contact of positive electrode and silicon simultaneously, thus promote the photoelectric efficiency of crystal silicon solar batteries.
In order to solve the problems of the technologies described above, the invention provides a kind of preparation method of selectivity making herbs into wool crystal silicon solar batteries, comprising the following steps:
Step one: silicon chip is cleaned;
Step 2: the front of silicon chip is oxidized, forming a layer thickness is the silicon dioxide layer of 80-200nm;
Step 3: print corrosive slurry by screen printing screens on described silicon dioxide layer, half tone is provided with positive electrode grid line, region corresponding to positive electrode grid line can not be printed corrosive slurry;
Step 4: carry out cleaning, drying up after placing 1-5 minute through the silicon chip of above-mentioned steps process, remove the silicon dioxide layer of described corrosive slurry printing zone;
Step 5: carry out acid system making herbs into wool on described silicon chip, the surface in the region that positive electrode grid line is corresponding has silicon dioxide protection, and after making herbs into wool, the surface in the region that positive electrode grid line is corresponding is still even curface, and other region forms suede structure;
Step 6: carry out the diffusion of high square resistance phosphorus at described front side of silicon wafer, the surface in the region making positive electrode grid line corresponding has uniform high square resistance phosphorus doping density;
Step 7: remove front phosphorosilicate glass and periphery P N knot that described phosphorus diffuses to form;
Step 8: carry out PECVD plated film at described front side of silicon wafer, forms silicon nitride anti-reflection film;
Step 9: in silicon chip back side printing back electrode and aluminium back surface field;
Step 10: the surface printing positive electrode slurry in region corresponding to the positive electrode grid line of front side of silicon wafer forms positive electrode;
Step 11: sintering is carried out to silicon chip and forms solar cell.
Preferably, the front side of silicon wafer oxidation in described step 2 adopts furnace oxidation mode, and be positioned over by silicon chip in diffusion furnace and pass into nitrogen and oxygen, after being warming up to 800-900 DEG C, silicon chip and oxygen reaction generate silicon dioxide.
Preferably, the flow of described oxygen and nitrogen is respectively 100-200sccm and 5-10slm, and the duration of ventilation of the mist of oxygen and nitrogen is 5-30min.
Preferably, the front side of silicon wafer oxidation in described step 2 adopts nitric acid oxidation mode, and the mass fraction of nitric acid is more than 60%.
Preferably, the live width of the positive electrode grid line on the half tone in described step 3 is 10-40um.
Preferably, in described step 5, the step of acid system making herbs into wool is that the front of described silicon chip is placed in HNO
3soak with in HF mixed solution acid tank, the silicon dioxide of positive electrode corresponding region will be removed, and retain smooth silicon face, and other region is by the suede structure described in formation.
Preferably, in described step 5, other region is absorbance region.
Preferably, the high square resistance phosphorus diffusion in described step 6 adopts tubular type phosphorus oxychloride method of diffusion to silicon chip surface doping high square resistance phosphorus.
Correspondingly, the present invention also provides a kind of selectivity making herbs into wool crystal silicon solar batteries, and it is obtained by above-mentioned preparation method.
Compared with prior art; the present invention has following beneficial effect: the present invention utilizes earth silicon mask; first form layer of silicon dioxide layer at silicon chip surface; then on described silicon dioxide layer, corrosive slurry is printed by screen printing screens by corrosive slurry and silicon dioxde reaction; half tone is provided with positive electrode grid line; region corresponding to positive electrode grid line can not be printed corrosive slurry makes the positive electrode grid line corresponding region on silicon chip be protected by silicon dioxide, then is immersed in by silicon chip HNO is housed
3with in HF mixed solution acid tank, thus form selectivity suede structure, namely the region that positive electrode grid line is corresponding is smooth silicon face, other region is textured making herbs into wool face, carry out the diffusion of high square resistance phosphorus at described front side of silicon wafer, the surface in the region making positive electrode grid line corresponding has uniform high square resistance phosphorus doping density; Relative to the crystal silicon solar batteries of whole acid system making herbs into wool, the crystal silicon solar batteries adopting the present invention to obtain obviously can reduce the few sub-recombination region of silicon chip surface, improve the phosphorus source uniform of the positive electrode area on silicon chip simultaneously, strengthen the ohmic contact of positive electrode and silicon, effectively improve the photoelectric conversion efficiency of battery.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly, below the present invention is described in further detail.
Process for etching due to existing crystal silicon battery is whole acid system making herbs into wool, limits the lifting of battery open circuit voltage, short circuit current and fill factor, curve factor, thus inhibits the increase of photoelectric conversion efficiency.
The present invention of the present invention's profit utilizes earth silicon mask; first form layer of silicon dioxide layer at silicon chip surface; then on described silicon dioxide layer, corrosive slurry is printed by screen printing screens by corrosive slurry and silicon dioxde reaction; half tone is provided with positive electrode grid line; region corresponding to positive electrode grid line can not be printed corrosive slurry makes the positive electrode grid line corresponding region on silicon chip be protected by silicon dioxide, then is immersed in by silicon chip HNO is housed
3with in HF mixed solution acid tank, thus form selectivity suede structure, namely the region that positive electrode grid line is corresponding is smooth silicon face, other region is textured making herbs into wool face, carry out the diffusion of high square resistance phosphorus at described front side of silicon wafer, the surface in the region making positive electrode grid line corresponding has uniform high square resistance phosphorus doping density; Relative to the crystal silicon solar batteries of whole acid system making herbs into wool, the crystal silicon solar batteries adopting the present invention to obtain obviously can reduce the few sub-recombination region of silicon chip surface, improve the phosphorus source uniform of the positive electrode area on silicon chip simultaneously, strengthen the ohmic contact of positive electrode and silicon, effectively improve the photoelectric conversion efficiency of battery.
The preparation process of selectivity making herbs into wool crystal silicon solar batteries of the present invention is specific as follows:
Step one: silicon chip is cleaned;
Step 2: the front of silicon chip is oxidized, forming a layer thickness is the silicon dioxide layer of 80-200nm;
Front side of silicon wafer oxidation adopts furnace oxidation mode, silicon chip is positioned in diffusion furnace and passes into nitrogen and oxygen, after being warming up to 800-900 DEG C, silicon chip and oxygen reaction generate silicon dioxide, the flow of described oxygen and nitrogen is respectively 100-200sccm (sccm refers to sccm) and 5-10slm (slm refers to Standard Liters per Minute), and the duration of ventilation of the mist of oxygen and nitrogen is 5-30min.
Front side of silicon wafer oxidation also can be adopt nitric acid oxidation mode, and the mass fraction of nitric acid is more than 60%.
Step 3: print corrosive slurry by screen printing screens on described silicon dioxide layer, half tone is provided with positive electrode grid line, region corresponding to positive electrode grid line can not be printed corrosive slurry;
The live width of the positive electrode grid line on described half tone is 10-40um.
Step 4: carry out cleaning, drying up after placing 1-5 minute through the silicon chip of above-mentioned steps process, remove the silicon dioxide layer of described corrosive slurry printing zone;
Step 5: carry out acid system making herbs into wool on described silicon chip, the surface in the region that positive electrode grid line is corresponding has silicon dioxide protection, and after making herbs into wool, the surface in the region that positive electrode grid line is corresponding is still even curface, and other region forms suede structure;
The step of acid system making herbs into wool is that the front of described silicon chip is placed in HNO
3soak with in HF mixed solution acid tank, the silicon dioxide of positive electrode corresponding region will be removed, and retain smooth silicon face, and other region is by the suede structure described in formation; Other described region is absorbance region.
Step 6: carry out the diffusion of high square resistance phosphorus at described front side of silicon wafer, the surface in the region making positive electrode grid line corresponding has uniform high square resistance phosphorus doping density;
Described high square resistance phosphorus diffusion adopts tubular type phosphorus oxychloride method of diffusion to silicon chip surface doping high square resistance phosphorus.
Step 7: remove front phosphorosilicate glass and periphery P N knot that described phosphorus diffuses to form;
Step 8: carry out PECVD plated film at described front side of silicon wafer, forms silicon nitride anti-reflection film;
Step 9: in silicon chip back side printing back electrode and aluminium back surface field;
Step 10: the surface printing positive electrode slurry in region corresponding to the positive electrode grid line of front side of silicon wafer forms positive electrode;
Step 11: sintering is carried out to silicon chip and forms solar cell.
Correspondingly, the present invention also provides a kind of selectivity making herbs into wool crystal silicon solar batteries, and it is obtained by above-mentioned preparation method.
Finally to should be noted that; above embodiment is only in order to illustrate technical scheme of the present invention but not limiting the scope of the invention; although be explained in detail the present invention with reference to preferred embodiment; those of ordinary skill in the art is to be understood that; can modify to technical scheme of the present invention or equivalent replacement, and not depart from essence and the scope of technical solution of the present invention.
Claims (9)
1. a preparation method for selectivity making herbs into wool crystal silicon solar batteries, is characterized in that, comprises the following steps:
Step one: silicon chip is cleaned;
Step 2: the front of silicon chip is oxidized, forming a layer thickness is the silicon dioxide layer of 80-200nm;
Step 3: print corrosive slurry by screen printing screens on described silicon dioxide layer, half tone is provided with positive electrode grid line, region corresponding to positive electrode grid line can not be printed corrosive slurry;
Step 4: carry out cleaning, drying up after placing 1-5 minute through the silicon chip of above-mentioned steps process, remove the silicon dioxide layer of described corrosive slurry printing zone;
Step 5: carry out acid system making herbs into wool on described silicon chip, the surface in the region that positive electrode grid line is corresponding has silicon dioxide protection, and after making herbs into wool, the surface in the region that positive electrode grid line is corresponding is still even curface, and other region forms suede structure;
Step 6: carry out the diffusion of high square resistance phosphorus at described front side of silicon wafer, the surface in the region making positive electrode grid line corresponding has uniform high square resistance phosphorus doping density;
Step 7: remove front phosphorosilicate glass and periphery P N knot that described phosphorus diffuses to form;
Step 8: carry out PECVD plated film at described front side of silicon wafer, forms silicon nitride anti-reflection film;
Step 9: in silicon chip back side printing back electrode and aluminium back surface field;
Step 10: the surface printing positive electrode slurry in region corresponding to the positive electrode grid line of front side of silicon wafer forms positive electrode;
Step 11: sintering is carried out to silicon chip and forms solar cell.
2. the preparation method of a kind of selectivity making herbs into wool crystal silicon solar batteries as claimed in claim 1, it is characterized in that, front side of silicon wafer oxidation in described step 2 adopts furnace oxidation mode, silicon chip is positioned in diffusion furnace and passes into nitrogen and oxygen, after being warming up to 800-900 DEG C, silicon chip and oxygen reaction generate silicon dioxide.
3. the preparation method of a kind of selectivity making herbs into wool crystal silicon solar batteries as claimed in claim 2, it is characterized in that, the flow of described oxygen and nitrogen is respectively 100-200sccm and 5-10slm, and the duration of ventilation of the mist of oxygen and nitrogen is 5-30min.
4. the preparation method of a kind of selectivity making herbs into wool crystal silicon solar batteries as claimed in claim 1, is characterized in that, the front side of silicon wafer oxidation in described step 2 adopts nitric acid oxidation mode, and the mass fraction of nitric acid is more than 60%.
5. the preparation method of a kind of selectivity making herbs into wool crystal silicon solar batteries as claimed in claim 1, it is characterized in that, the live width of the positive electrode grid line on the half tone in described step 3 is 10-40um.
6. the preparation method of a kind of selectivity making herbs into wool crystal silicon solar batteries as claimed in claim 1, it is characterized in that, the step of acid system making herbs into wool in described step 5 is that the front of described silicon chip is placed in HNO
3soak with in HF mixed solution acid tank, the silicon dioxide of positive electrode corresponding region will be removed, and retain smooth silicon face, and other region is by the suede structure described in formation.
7. the preparation method of a kind of selectivity making herbs into wool crystal silicon solar batteries as claimed in claim 1, in described step 5, other region is absorbance region.
8. the preparation method of a kind of selectivity making herbs into wool crystal silicon solar batteries as claimed in claim 1, is characterized in that, the high square resistance phosphorus diffusion in described step 6 adopts tubular type phosphorus oxychloride method of diffusion to silicon chip surface doping high square resistance phosphorus.
9. a selectivity making herbs into wool crystal silicon solar batteries, is characterized in that, it is obtained by the preparation method described in any one of claim 1-8.
Priority Applications (1)
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| CN201510423095.2A CN105097963A (en) | 2015-07-18 | 2015-07-18 | Selectively textured crystal silicon solar cell and preparation method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510423095.2A CN105097963A (en) | 2015-07-18 | 2015-07-18 | Selectively textured crystal silicon solar cell and preparation method thereof |
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| CN105097963A true CN105097963A (en) | 2015-11-25 |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666243A (en) * | 2018-05-09 | 2018-10-16 | 永嘉利为新能源有限公司 | A kind of etching method of single crystal battery piece |
| CN109300999A (en) * | 2018-12-03 | 2019-02-01 | 山东力诺太阳能电力股份有限公司 | A kind of efficient crystal silicon solar batteries preparation method and its battery of preparation |
| CN109494168A (en) * | 2018-12-10 | 2019-03-19 | 西安宏星电子浆料科技有限责任公司 | A kind of crystal silicon solar batteries metallization grid line electric performance test method |
| CN113421943A (en) * | 2021-01-29 | 2021-09-21 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Heterojunction solar cell and preparation method thereof |
| CN114171643A (en) * | 2021-12-02 | 2022-03-11 | 中节能太阳能科技（镇江）有限公司 | Method for manufacturing selective-texturing heterojunction solar cell |
| CN115050852A (en) * | 2022-06-08 | 2022-09-13 | 宁夏隆基乐叶科技有限公司 | Solar cell and preparation method thereof |
-
2015
- 2015-07-18 CN CN201510423095.2A patent/CN105097963A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108666243A (en) * | 2018-05-09 | 2018-10-16 | 永嘉利为新能源有限公司 | A kind of etching method of single crystal battery piece |
| CN109300999A (en) * | 2018-12-03 | 2019-02-01 | 山东力诺太阳能电力股份有限公司 | A kind of efficient crystal silicon solar batteries preparation method and its battery of preparation |
| CN109494168A (en) * | 2018-12-10 | 2019-03-19 | 西安宏星电子浆料科技有限责任公司 | A kind of crystal silicon solar batteries metallization grid line electric performance test method |
| CN109494168B (en) * | 2018-12-10 | 2022-07-26 | 西安宏星电子浆料科技有限责任公司 | Method for testing electrical performance of metalized grid line of crystalline silicon solar cell |
| CN113421943A (en) * | 2021-01-29 | 2021-09-21 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Heterojunction solar cell and preparation method thereof |
| CN114171643A (en) * | 2021-12-02 | 2022-03-11 | 中节能太阳能科技（镇江）有限公司 | Method for manufacturing selective-texturing heterojunction solar cell |
| CN115050852A (en) * | 2022-06-08 | 2022-09-13 | 宁夏隆基乐叶科技有限公司 | Solar cell and preparation method thereof |
| CN115050852B (en) * | 2022-06-08 | 2024-04-30 | 宁夏隆基乐叶科技有限公司 | Solar cell and preparation method thereof |
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