CN113421943A - Heterojunction solar cell and preparation method thereof - Google Patents
Heterojunction solar cell and preparation method thereof Download PDFInfo
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- CN113421943A CN113421943A CN202110129559.4A CN202110129559A CN113421943A CN 113421943 A CN113421943 A CN 113421943A CN 202110129559 A CN202110129559 A CN 202110129559A CN 113421943 A CN113421943 A CN 113421943A
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- 238000000034 method Methods 0.000 claims abstract description 82
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 76
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- 229910052709 silver Inorganic materials 0.000 claims abstract description 59
- 239000004332 silver Substances 0.000 claims abstract description 59
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- 239000010409 thin film Substances 0.000 claims description 30
- 238000000151 deposition Methods 0.000 claims description 19
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- 238000005229 chemical vapour deposition Methods 0.000 claims description 13
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 5
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- 238000004506 ultrasonic cleaning Methods 0.000 claims description 5
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic System, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a preparation method of a heterojunction solar cell, belongs to the technical field of solar cell processing methods, and at least partially solves the problem that silver paste cannot be in good contact with the bottom of a suede surface when silver paste is printed by the method in the prior art, so that the use efficiency of the solar cell is low. The preparation method comprises the steps of cleaning a silicon wafer for a preset time; printing photoresist on the surface of the cleaned silicon wafer by adopting a screen printing process, wherein the pattern of the photoresist is the same as the pattern of a preset grid line; texturing the silicon wafer with the photoresist; removing the photoresist on the silicon wafer, and cleaning; forming an amorphous silicon film on the silicon wafer; forming a transparent conductive film on the amorphous silicon film; and forming the grid line with the preset pattern on the transparent conductive film. Through the processing scheme of this application, the availability factor of heterojunction solar cell has been improved.
Description
Technical Field
The application relates to the technical field of solar cell processing methods, in particular to a heterojunction solar cell and a preparation method thereof.
Background
The silicon-based heterojunction, abbreviated as SHJ, is a Si-basedheferojunction. The silicon-based heterojunction cell is one of the mainstream high-efficiency solar cell technologies at present, has high conversion efficiency and low temperature coefficient, is an important direction for the development of the solar cell, has wide market prospect, and has a structure shown in figure 1. Generally, the silicon-based heterojunction battery comprises a silver grid line 3 and a main body part of the battery from top to bottom in sequence, wherein the main body part of the battery comprises a silicon wafer 1 and a textured surface formed on the surface of the silicon wafer 1 after texturing, the textured surface is an area of a pyramid structure 2 shown in fig. 1, and an amorphous silicon film and a transparent conductive film are formed on the surface of the textured surface. The cell structure is symmetrical up and down, and the lower surface structure is similar to the upper surface.
The purpose of texturing the silicon wafer is to roughen the surface of the battery and reduce the reflection of the surface of the silicon wafer. After texturing, a plurality of textured surfaces similar to pyramids are formed on the surface of the silicon wafer. After the battery completes the preparation of the amorphous silicon film and the transparent conductive film, silver grid lines need to be printed on the upper surface and the lower surface of the battery, and the silver grid lines are responsible for collecting current of the battery and play a role in conducting.
According to the method in the prior art, the silicon-based heterojunction battery uses low-temperature silver paste, the low-temperature silver paste is a slurry mixture composed of silver powder and organic resin, the slurry mixture has certain fluidity, the surface of a silicon wafer is provided with a plurality of pyramid-shaped rough surfaces, the silver paste is easy to extrude by a scraper and is attached to the surface of the battery when being printed, and the silver paste cannot be contacted with the bottom of the suede in partial areas due to the fact that the suede has certain height, current collection is affected, and the service efficiency of the silicon-based heterojunction battery is reduced.
Disclosure of Invention
In view of this, embodiments of the present disclosure provide a heterojunction solar cell and a method for manufacturing the same, which at least partially solve the problem of low usage efficiency of a solar cell due to the fact that a silver paste cannot be in good contact with the bottom of a textured surface when the silver paste is printed by using the method in the prior art.
A method of heterojunction solar cell fabrication, the method comprising:
cleaning the silicon wafer for a preset time;
printing photoresist on the surface of the cleaned silicon wafer by adopting a screen printing process, wherein the pattern of the photoresist is the same as the pattern of a preset grid line;
texturing the silicon wafer with the photoresist;
removing the photoresist on the silicon wafer, and cleaning;
forming an amorphous silicon film on the silicon wafer;
forming a transparent conductive film on the amorphous silicon film;
forming a grid line of the preset pattern on the transparent conductive film;
and forming the grid line of the preset pattern on the transparent conductive film by adopting a screen printing mode, wherein the grid line is made of silver paste or copper wire silver paste.
The printing process comprises the process steps of silver paste canning, generally, low-temperature silver paste is adopted, the silver paste is a slurry mixture consisting of silver powder and organic resin and has certain fluidity, the silicon wafer surface has a plurality of pyramid-shaped rough surfaces (suede surfaces) through the treatment of the second step and the third process, the silicon wafer with photoresist is put into a texturing groove for texturing, the contact between the silver paste and the battery surface can be improved, the widening of the silver paste to the periphery is reduced, the welding tension is improved, the silver paste is attached to the pyramid-shaped rough surfaces when the silver paste is printed, the contact of the silver paste at the bottom of the suede surfaces of the pyramid-shaped area is firm, the silver paste cannot be extruded by a scraper, the battery edge cannot be widened, the width of a grid line keeps the same according to the design size, the shading area is prevented from being enlarged due to the increase of the width of the grid line, and the current and the conversion efficiency of the battery can be reduced, in the traditional method, the silver paste widens towards the edge (flows towards the edge), the height of the finally formed grid line is reduced, and when the assembly is packaged, the series welding tension is too low to pass a product reliability test, so that the service efficiency of the heterojunction solar cell is greatly reduced. The method adopts a screen printing method to screen print the silver grid lines of the battery, and the screen printing plate adopted in the step is the same as the screen printing plate in the step of printing the photoresist on the surface of the silicon chip, so that the silver paste is completely extruded to the area protected by the photoresist, and a flat area of the suede cannot be formed.
According to the method, the photoresist is printed on the surface of the cleaned silicon wafer by a screen printing process, and the silicon wafer with the photoresist is placed into the texturing groove for texturing, so that the contact between silver paste and the surface of the battery can be improved, the silver paste is reduced from widening to the periphery, and the welding tension is improved.
In a preferred or alternative embodiment, the method for performing a cleaning process on a silicon wafer for a predetermined time includes:
the silicon wafer is cleaned by an ultrasonic cleaning process, a cleaning solution is acetone, the cleaning time is 4-6 minutes, preferably 5 minutes, for example, the silicon wafer with the photoresist is put into a texturing groove for texturing, the texturing solution is a mixed solution of a sodium hydroxide solution and a texturing additive, the texturing temperature is 60-80 ℃, the texturing time is 10-20 minutes, preferably, the texturing temperature is 80 ℃, and the texturing time is 15 minutes. The cleaning efficiency is high at a proper temperature, the process is a chemical reaction, the reaction is promoted by improving the activity of enzyme, and the cleaning efficiency is optimal when the cleaning is carried out at the temperature in consideration of the problem of industrial mass production efficiency.
In a preferred or alternative embodiment, a method of forming an amorphous silicon thin film on a silicon wafer includes: depositing an intrinsic amorphous silicon film and an n-type amorphous silicon film on the front side of the silicon wafer by adopting a chemical vapor deposition method, and depositing the intrinsic amorphous silicon film and a p-type amorphous silicon film on the back side of the silicon wafer by adopting the chemical vapor deposition method. N, P are materials used in conventional semiconductors, such as doping with impurities of silicon or germanium, or doping with other metals, and will not be described further herein.
In a preferred or alternative embodiment, a method of forming a transparent conductive film on the amorphous silicon thin film: and placing the battery with the deposited amorphous silicon film into a magnetron sputtering cavity, and respectively depositing a layer of transparent conductive film on the front side and the back side of the silicon wafer.
In a preferred or alternative embodiment, after removing the photoresist on the silicon wafer and cleaning, before forming an intrinsic amorphous silicon thin film, an n-type amorphous silicon thin film and a p-type amorphous silicon thin film on the silicon wafer, the method further includes: and drying the silicon wafer at the temperature of 115-125 ℃ for 0.1-1 hour.
In a preferred or alternative embodiment, after the step of forming the gate line of the predetermined pattern on the transparent conductive film, the method further includes: and carrying out curing and annealing process treatment on the silicon wafer at the temperature of 180-260 ℃ for 15-30 minutes to form the battery.
On the other hand, the heterojunction solar cell comprises a silicon wafer, and an amorphous silicon thin film, a transparent conductive thin film and a grid line which are arranged on two sides of the silicon wafer, wherein the surface of the silicon wafer is provided with a non-suede surface in the area corresponding to the grid line, and the other areas are suede surfaces.
Further, the amorphous silicon thin film includes: an intrinsic amorphous silicon film and an n-type amorphous silicon film on the front surface of the silicon wafer, and an intrinsic amorphous silicon film and a p-type amorphous silicon film on the back surface of the silicon wafer
Advantageous effects
According to the method, the photoresist is printed on the surface of the cleaned silicon wafer by a screen printing process, and the silicon wafer with the photoresist is placed into the texturing groove for texturing, so that the contact between silver paste and the surface of the battery can be improved, the silver paste is reduced from widening to the periphery, and the welding tension is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic illustration of a prior art heterojunction solar cell process;
FIG. 2 is a flow chart of a process for fabricating the present heterojunction solar cell in some embodiments of the invention;
FIG. 3 is a schematic structural diagram of the process of forming the heterojunction solar cell of the present invention in some embodiments;
wherein:
1. a silicon wafer; 2. a pyramid structure; 3. a gate line.
Detailed Description
The embodiments of the present application will be described in detail below with reference to the accompanying drawings.
The following description of the embodiments of the present application is provided by way of specific examples, and other advantages and effects of the present application will be readily apparent to those skilled in the art from the disclosure herein. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. The present application is capable of other and different embodiments and its several details are capable of modifications and/or changes in various respects, all without departing from the spirit of the present application. It is to be noted that the features in the following embodiments and examples may be combined with each other without conflict. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
It is noted that various aspects of the embodiments are described below within the scope of the appended claims. It should be apparent that the aspects described herein may be embodied in a wide variety of forms and that any specific structure and/or function described herein is merely illustrative. Based on the present application, one skilled in the art should appreciate that one aspect described herein may be implemented independently of any other aspects and that two or more of these aspects may be combined in various ways. For example, an apparatus may be implemented and/or a method practiced using any number of the aspects set forth herein. Additionally, such an apparatus may be implemented and/or such a method may be practiced using other structure and/or functionality in addition to one or more of the aspects set forth herein.
It should be noted that the drawings provided in the following embodiments are only for illustrating the basic idea of the present application, and the drawings only show the components related to the present application rather than the number, shape and size of the components in actual implementation, and the type, amount and ratio of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.
In addition, in the following description, specific details are provided to facilitate a thorough understanding of the examples. However, it will be understood by those skilled in the art that aspects may be practiced without these specific details.
A method of heterojunction solar cell fabrication as shown in figure 2, the method comprising:
texturing a silicon wafer with photoresist;
removing the photoresist on the silicon wafer and cleaning;
forming an amorphous silicon film on a silicon wafer;
forming a transparent conductive film on the amorphous silicon film;
forming a grid line with a preset pattern on the transparent conductive film;
the method for forming the grid line of the preset pattern on the transparent conductive film comprises the step of adopting a screen printing mode, wherein the grid line is made of silver paste or copper wire silver paste.
The steps are explained in detail as follows:
as some embodiments provided in the present application, the cleaning process for a preset time on a silicon wafer includes: and cleaning the silicon wafer by adopting an ultrasonic cleaning process, wherein the cleaning solution is acetone, the cleaning time is 4-6 minutes, preferably 5 minutes, and the reduction of the efficiency of the battery due to the existence of impurities on the silicon wafer is avoided.
And printing photoresist on the surface of the cleaned silicon wafer by a screen printing process, wherein the pattern of the photoresist is the same as the grid line of a preset pattern. The surface of the cleaned silicon wafer is printed with photoresist by a screen printing process, and the silicon wafer with the photoresist is put into a texturing groove for texturing, so that the contact between silver paste and the surface of a battery can be improved, the widening of the silver paste to the periphery is reduced, and the welding tension is improved.
And putting the silicon wafer with the photoresist into a texturing groove for texturing. Specifically, a silicon wafer with photoresist is put into a texturing groove for texturing, the texturing solution is a mixed solution of a sodium hydroxide solution and a texturing additive, the texturing temperature is 60-80 ℃, the duration is 10-20 minutes, and preferably, the texturing temperature is 80 ℃, and the duration is 15 minutes. At a proper temperature, the cleaning efficiency is high, the process is a chemical reaction, and the reaction is accelerated by improving the activity of enzyme. Considering the problem of industrial mass production efficiency, the cleaning is carried out at the temperature, and the efficiency is optimal. In the area covered by the photoresist, the texturing solution can not contact with the silicon wafer, so that a pyramid-shaped textured structure can not be formed at the corresponding position on the silicon wafer, and the area not covered by the photoresist can contact with the texturing solution to form a normal textured surface.
Removing the photoresist on the silicon wafer after texturing, and cleaning;
after the photoresist on the silicon wafer is removed and cleaned, the silicon wafer is dried at the temperature of 120 ℃ for 0.1-1 hour, so that the conversion rate of the battery after preparation is improved.
And depositing an intrinsic amorphous silicon film, an N-type amorphous silicon film and a P-type amorphous silicon film on the silicon wafer by adopting a chemical vapor deposition method. The method for forming the amorphous silicon thin film on the silicon wafer comprises the following steps: depositing an intrinsic amorphous silicon film and an N-type amorphous silicon film on the front surface of the silicon wafer by adopting a chemical vapor deposition method, and depositing the intrinsic amorphous silicon film and the P-type amorphous silicon film on the back surface of the silicon wafer by adopting the chemical vapor deposition method, for example, depositing the intrinsic amorphous silicon film and the N-doped amorphous silicon film for passivation on the front surface of the silicon wafer by adopting the chemical vapor deposition method, depositing the intrinsic amorphous silicon film on the front surface of the silicon wafer by adopting the chemical vapor deposition method, depositing the N-type amorphous silicon film on the intrinsic amorphous silicon film by adopting the chemical vapor deposition method, and depositing the intrinsic amorphous silicon film and the P-type amorphous silicon film on the back surface of the silicon wafer by adopting the chemical vapor deposition method, wherein the N-doped amorphous silicon film is used as an emitter, and the P-type amorphous silicon film is used as a back electrode. N, P are materials used in conventional semiconductors, such as doping with impurities of silicon or germanium, or doping with other metals, and will not be described further herein.
The method for forming the transparent conductive film on the silicon chip comprises the following steps: and respectively depositing a layer of transparent conductive film on the surface of the silicon wafer after the amorphous silicon film is deposited. For example, the cell after depositing the amorphous silicon thin film is placed in a magnetron sputtering chamber, and a transparent conductive thin film, for example, an ITO transparent conductive thin film, which is made of an N-type semiconductor material and has high conductivity, high visible light transmittance, high mechanical hardness and good chemical stability, is deposited on each of the front and back surfaces of the silicon wafer.
And printing the grid line with a preset pattern by adopting a screen printing process. And (4) silk-screen printing of the silver grid lines of the battery, wherein the pattern of the silver grid lines is the same as that of the photoresist. The printing process comprises the process steps of silver paste canning, generally, low-temperature silver paste is adopted, the silver paste is a slurry mixture consisting of silver powder and organic resin and has certain fluidity, after the treatment of the second step and the third step, the surface of a silicon wafer has a plurality of pyramid structures, a rough surface (a suede) is formed on the pyramid shape, the silicon wafer with photoresist is placed into a texturing groove for texturing, the contact between the silver paste and the surface of a battery can be improved, the widening of the silver paste to the periphery is reduced, the welding tension is improved, the silver paste is attached to the rough surface of the pyramid shape when being printed, the silver paste is firmly contacted at the bottom of the suede of the pyramid-shaped area, the silver paste cannot be extruded by a scraper, the edge of the battery cannot be widened, the width of a grid line is kept the same by the designed size, the shading area is prevented from being enlarged due to the increase of the width of the grid line, and the current and the conversion efficiency of the battery can be reduced, in the traditional method, the silver paste widens towards the edge (flows towards the edge), the height of the finally formed grid line is reduced, and when the assembly is packaged, the series welding tension is too low to pass a product reliability test, so that the service efficiency of the heterojunction battery is greatly reduced.
And (3) silk-screening the silver grid lines of the battery by adopting a silk-screen printing method, wherein the adopted screen printing plate (the tool adopted by the silk-screen printing) in the step is the same as the screen printing plate in the step two, so that the silver paste is completely extruded to the area protected by the photoresist, and a flat area of the suede cannot be formed.
In the above process, the gate line is made of silver paste. In some cases, the grid lines can also be made of copper wire silver paste.
As some embodiments provided in this application, after the step of printing the silver grid line by the screen printing process, the method further includes: and carrying out curing and annealing process treatment on the silicon wafer, wherein the treatment temperature is 180-260 ℃, and the treatment time is 15-30 minutes. After the curing, the annealing process improves the contact interface of the transparent conductive film and the electrode, so that the series resistance of the silicon wafer is obviously reduced, the parallel resistance is increased, and the conversion rate of the cell can be improved.
The following provides the best mode of carrying out the process of the present application and the comparative examples and the comparison of the effects thereof, as follows:
the best mode of the method comprises the following steps:
1. the N-type monocrystalline silicon wafer is subjected to primary cleaning by adopting ultrasonic cleaning in the solution of
Acetone for 5 minutes;
2. printing photoresist on the surface of the battery by using a screen printer, wherein the pattern of the photoresist is the same as that of the subsequent grid line;
3. putting the silicon wafer with the photoresist into a texturing groove for texturing, wherein the texturing solution is NaOH and a texturing additive, and the temperature is 80 ℃ and the duration is 20 minutes; in the area covered by the photoresist, the texturing solution can not contact with the silicon wafer, so a pyramid-shaped textured structure can not be formed at the corresponding position on the silicon wafer, and the area not covered by the photoresist can contact with the texturing solution to form a normal textured surface;
4. after texturing, removing photoresist, then putting the silicon wafer into a cleaning tank for cleaning, drying the silicon wafer after cleaning, and putting the silicon wafer into a PECVD cavity;
5. depositing an intrinsic amorphous silicon film, an n-type amorphous silicon film and a p-type amorphous silicon film on a monocrystalline silicon wafer by adopting a chemical vapor deposition method;
6. placing the battery with the deposited amorphous silicon thin film into a magnetron sputtering cavity, and depositing a layer of ITO on each of the upper surface and the lower surface of the battery, wherein the ITO is a transparent conductive thin film;
7. silk-screen printing is carried out on the silver grid lines of the battery by adopting a silk-screen printing method, the adopted screen printing plate in the step is the same as the screen printing plate in the step, and therefore, the silver paste is completely extruded to a region (a flat region without a suede) protected by the photoresist;
8. and after screen printing, curing and annealing the battery to finish the preparation of the battery.
Comparative example 1
1. Carrying out primary cleaning on the N-type monocrystalline silicon wafer, wherein ultrasonic cleaning is adopted for cleaning, acetone is used as a solution, and the time is 5 minutes;
2. putting the silicon wafer into a texturing groove for texturing, wherein the texturing solution is NaOH and a texturing additive, and the temperature is 80 ℃ and the duration is 20 minutes;
3. depositing an intrinsic amorphous silicon film, an N-type amorphous silicon film and a P-type amorphous silicon film on a monocrystalline silicon wafer by adopting a chemical vapor deposition method;
4. placing the battery deposited with the amorphous silicon film into a magnetron sputtering cavity, and respectively depositing a layer of ITO transparent conductive film on the upper surface and the lower surface of the battery;
5. and (4) silk-screen printing the silver grid lines of the battery by adopting a silk-screen printing method.
The technical effects are compared and shown in the table I
Watch 1
It can be seen that the short-circuit current of the battery prepared by the method is improved by more than 4%, the filling factor of the battery is improved by 1%, and finally the battery efficiency is improved by 6.5 percentage points.
According to the technical scheme, the photoresist is innovatively used for covering, a protection region is formed on the surface of the silicon wafer (texturing is avoided), after texturing is conducted, the region protected by the photoresist is a flat region, the pattern of the photoresist is consistent with the pattern of screen printing, the silver paste is pressed to the flat region, the silver paste can be fully contacted with the surface of the silicon wafer, and electrical contact is improved. In the flat region, silver thick liquid is controlled to the edge extension, and the silver grid line of screen printing is more residential, and the shading area is little, and the short-circuit current of battery improves, and conversion efficiency improves, and silver thick liquid reduces to the edge extension, and the height ratio of grid line is higher, has promoted the series welding pulling force.
As shown in fig. 3, on the other hand, a heterojunction solar cell is provided, which includes a silicon wafer 1, and an amorphous silicon thin film, a transparent conductive thin film and a gate line 3 disposed on two sides of the silicon wafer 1, wherein a region of the surface of the silicon wafer 1 corresponding to the gate line 3 is a non-textured surface, and the rest regions are textured surfaces. The amorphous silicon thin film comprises an intrinsic amorphous silicon thin film and an N-type amorphous silicon thin film which are positioned on the front surface of the silicon wafer 1, and an intrinsic amorphous silicon thin film and a P-type amorphous silicon thin film which are positioned on the back surface of the silicon wafer.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (10)
1. A method of heterojunction solar cell fabrication, comprising:
cleaning the silicon wafer for a preset time;
printing photoresist on the surface of the cleaned silicon wafer by adopting a screen printing process, wherein the pattern of the photoresist is the same as the pattern of a preset grid line;
texturing the silicon wafer with the photoresist;
removing the photoresist on the silicon wafer, and cleaning;
forming an amorphous silicon film on the silicon wafer;
forming a transparent conductive film on the amorphous silicon film;
and forming the grid line with the preset pattern on the transparent conductive film.
2. The method of claim 1, wherein the step of performing the cleaning process on the silicon wafer for a predetermined time comprises:
and cleaning the silicon wafer by adopting an ultrasonic cleaning process, wherein a cleaning solution comprises acetone, and the cleaning time is 4-6 minutes.
3. The method of claim 1, wherein the step of texturing the silicon wafer with the photoresist comprises:
putting the silicon wafer with the photoresist into a texturing groove for texturing, wherein the texturing solution comprises a mixed solution of a sodium hydroxide solution and a texturing additive, the texturing temperature is 60-80 ℃, and the texturing time is 10-20 minutes.
4. The method of claim 1, wherein the step of forming an amorphous silicon thin film on the silicon wafer comprises:
depositing an intrinsic amorphous silicon film and an N-type amorphous silicon film on the front side of the silicon wafer by adopting a chemical vapor deposition method;
and depositing an intrinsic amorphous silicon film and a P-type amorphous silicon film on the back of the silicon wafer by adopting a chemical vapor deposition method.
5. The method of claim 1, wherein the step of forming a transparent conductive film on the amorphous silicon thin film comprises:
and placing the silicon wafer into a magnetron sputtering cavity, and respectively depositing a layer of transparent conductive film on the amorphous silicon film on the front surface and the back surface.
6. The method as claimed in any one of claims 1 to 5, wherein after removing the photoresist on the silicon wafer and cleaning, before forming an intrinsic amorphous silicon thin film, an N-type amorphous silicon thin film and a P-type amorphous silicon thin film on the amorphous silicon thin film, further comprising:
and drying the silicon wafer at the temperature of 115-125 ℃ for 0.1-1 hour.
7. The method according to any one of claims 1 to 5, further comprising, after the step of forming the gate line of the predetermined pattern on the transparent conductive film:
and carrying out curing and annealing process treatment on the silicon wafer, wherein the treatment temperature is 180-260 ℃, and the treatment time is 15-30 minutes.
8. The method of any one of claims 1-5, wherein the grid lines are made of a material comprising silver paste, or copper wire silver paste.
9. A heterojunction solar cell comprises a silicon wafer, and an amorphous silicon thin film, a transparent conductive thin film and a grid line which are arranged on two sides of the silicon wafer.
10. The heterojunction solar cell of claim 9, wherein the amorphous silicon thin film comprises:
the intrinsic amorphous silicon film and the N-type amorphous silicon film are positioned on the front surface of the silicon wafer;
and the intrinsic amorphous silicon film and the P-type amorphous silicon film are positioned on the back surface of the silicon wafer.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114420374A (en) * | 2022-01-25 | 2022-04-29 | 周静璐 | Composite powder for negative electrode of solar cell, preparation method of composite powder and silver paste for negative electrode of solar cell |
| CN114497291A (en) * | 2022-04-19 | 2022-05-13 | 山东省科学院激光研究所 | Structure and method for improving efficiency of HIT battery |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102651423A (en) * | 2011-02-25 | 2012-08-29 | 茂迪(苏州)新能源有限公司 | Selective wool fabricating method for solar battery |
| CN103094371A (en) * | 2013-01-21 | 2013-05-08 | 西安交通大学苏州研究院 | Polycrystalline silicon suede structure and suede manufacturing method thereof |
| CN105097963A (en) * | 2015-07-18 | 2015-11-25 | 广东爱康太阳能科技有限公司 | Selectively textured crystal silicon solar cell and preparation method thereof |
| CN106601855A (en) * | 2015-10-14 | 2017-04-26 | 钧石(中国)能源有限公司 | Preparation method of double-side power generation heterojunction solar cell |
| CN108336164A (en) * | 2018-03-12 | 2018-07-27 | 南昌大学 | A kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure |
| CN108987536A (en) * | 2017-06-01 | 2018-12-11 | 福建金石能源有限公司 | A kind of production method of single side power generation heterojunction solar battery |
| CN110993700A (en) * | 2019-10-16 | 2020-04-10 | 晋能清洁能源科技股份公司 | Heterojunction solar cell and preparation process thereof |
-
2021
- 2021-01-29 CN CN202110129559.4A patent/CN113421943A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102651423A (en) * | 2011-02-25 | 2012-08-29 | 茂迪(苏州)新能源有限公司 | Selective wool fabricating method for solar battery |
| CN103094371A (en) * | 2013-01-21 | 2013-05-08 | 西安交通大学苏州研究院 | Polycrystalline silicon suede structure and suede manufacturing method thereof |
| CN105097963A (en) * | 2015-07-18 | 2015-11-25 | 广东爱康太阳能科技有限公司 | Selectively textured crystal silicon solar cell and preparation method thereof |
| CN106601855A (en) * | 2015-10-14 | 2017-04-26 | 钧石(中国)能源有限公司 | Preparation method of double-side power generation heterojunction solar cell |
| CN108987536A (en) * | 2017-06-01 | 2018-12-11 | 福建金石能源有限公司 | A kind of production method of single side power generation heterojunction solar battery |
| CN108336164A (en) * | 2018-03-12 | 2018-07-27 | 南昌大学 | A kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure |
| CN110993700A (en) * | 2019-10-16 | 2020-04-10 | 晋能清洁能源科技股份公司 | Heterojunction solar cell and preparation process thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114420374A (en) * | 2022-01-25 | 2022-04-29 | 周静璐 | Composite powder for negative electrode of solar cell, preparation method of composite powder and silver paste for negative electrode of solar cell |
| CN114420374B (en) * | 2022-01-25 | 2024-01-09 | 晶澜光电科技(江苏)有限公司 | Composite powder for negative electrode of solar cell, preparation method of composite powder and silver paste |
| CN114497291A (en) * | 2022-04-19 | 2022-05-13 | 山东省科学院激光研究所 | Structure and method for improving efficiency of HIT battery |
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