CN108336164A - A kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure - Google Patents
A kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure Download PDFInfo
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- CN108336164A CN108336164A CN201810198911.8A CN201810198911A CN108336164A CN 108336164 A CN108336164 A CN 108336164A CN 201810198911 A CN201810198911 A CN 201810198911A CN 108336164 A CN108336164 A CN 108336164A
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 37
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 34
- 239000002184 metal Substances 0.000 claims abstract description 34
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000002161 passivation Methods 0.000 claims abstract description 20
- 239000013078 crystal Substances 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 230000005684 electric field Effects 0.000 claims abstract description 5
- 235000008216 herbs Nutrition 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 239000010946 fine silver Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
A kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure, using N-shaped crystal silicon chip as substrate, transmitting pole-face is divided into emitter conductive region and passivation entering light region：The former is made of intrinsic amorphous silicon passivation layer, heavily-doped p-type amorphous silicon layer, metal grid lines I, and the latter is penetrated a layer I and constituted by heavily-doped p-type crystalline silicon field passivation layer I, passivated reflection reducing successively outward by substrate；Electric field surface is carried on the back by intrinsic amorphous silicon passivation layer II, highly doped n-type amorphous silicon layer, transparent conductive oxide tco layer, metal grid lines II, wherein metal grid lines II part covering transparent conductive oxide tco layers.The present invention maintains characteristic that is two-sided into light characteristic, while obtaining high open circuit voltage and high short circuit current, improves the generating capacity of crystal-silicon solar cell.The use of valuable transparent conductive oxide is avoided completely compared to HIT and HAC D structures, while being reduced carrier and being transmitted caused series resistance losses on TCO.
Description
Technical field
The invention belongs to solar cells and field of semiconductor devices.It is related to the technology of preparing of solar cell.
Background technology
For ground solar cell, the structure actual power generation of two-sided entering light is higher than the single side entering light of same nominal power
The understanding of solar cell is generally received by industry.The two-sided entering light solar cell of mainstream is with N-shaped crystal silicon chip at present
For substrate.One is the n-PERT structures based on pn homogeneity junction structures, feature is that short circuit current is big, and open-circuit voltage is low；It is another
Class is so that based on pn heterojunction structures, using HIT structures as representative, feature is that short circuit current is small, and open-circuit voltage is high.How to improve
The former open-circuit voltage and the short circuit current for improving the latter are always difficult point in the industry, and the direction made great efforts.As can in conjunction with two
The characteristics of person, invents a kind of new structure, while the advantages of obtain high short circuit current, high open circuit voltage, is expected to further increase
The performance of two-sided crystal-silicon solar cell.The pervious invention of University Of Nanchang is in the progress that this side up（Middle promulgated by the State Council
Bright patent, No. 201510776929.8）, structure is known as HAC-D structures, means that the structure combines HAC
（heterojunction of amorphous silicon and crystalline silicon）Hetero-junctions and diffusion are standby
Homojunction (Diffused homojunction of crystalline silicon)）.It can get compared to HIT structures
Higher short circuit current, and the characteristics of certifiable HIT structure high open circuit voltages.But the structure still makes progress space, and the present invention is just
It is to be further improved to HAC-D structures.Compared to the electric current and open circuit electricity that HAC-D structures can further improve solar cell
Pressure reduces series resistance, and reduces valuable transparent conductive oxide（TCO）Dosage.
Invention content
The main object of the present invention is to propose a kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure, knot
The advantages of closing the high short circuit current of pn homojunctions and pn hetero-junctions high open circuit voltages, reasonable disposition device is constituted, to further increase
The generating efficiency of crystal silicon double-side solar cell reduces the consumption of valuable raw material.
The present invention is achieved by the following technical solutions.
A kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure of the present invention, with N-shaped crystal silicon chip
（6）As substrate, transmitting pole-face is divided into emitter-conductive region and passivation-entering light region：Emitter-conductive region is by base
Bottom is outward successively by intrinsic amorphous silicon passivation layer（3）, heavily-doped p-type amorphous silicon layer（2）, metal grid lines I（1）It constitutes, be passivated-into
Light region is by substrate outward successively by heavily-doped p-type crystalline silicon field passivation layer I（5）, passivated reflection reducing penetrate a layer I（4）It constitutes.The two
It region cross-distribution and is not overlapped.
To improve metal grid lines I（1）With heavily-doped p-type amorphous silicon layer（2）Between contact electric conductivity, preferably the two it
Between be inserted into a transition tco layer.
Passivated reflection reducing of the present invention penetrates a layer I（4）It is preferred that silicon nitride.
Emitter of the present invention and heavily-doped p-type crystalline silicon field passivation layer I（5）Between preferably carry out insulation processing.
Further, it is the performance of raising device, the heavily-doped p-type crystalline silicon field passivation layer I（5）Thickness it is preferred
1-300nm。
A kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure of the present invention carries on the back electric field surface knot
Structure is followed successively by intrinsic amorphous silicon passivation layer II by substrate outward（7）, highly doped n-type amorphous silicon layer（8）, transparent conductive oxide
Tco layer（9）, metal grid lines II（10）, wherein metal grid lines II（10）Part covering transparent conductive oxide tco layer（9）.
Further, it is the performance of raising device, N-shaped crystal silicon chip of the present invention（6）Can with two-sided making herbs into wool, with into
One step improves solar cell short circuit current.
Further, N-shaped crystal silicon chip（6）Two-sided making herbs into wool situation can be different, use reduced size gold word on one side
The matte of tower structure, in addition one side is using the pyramid matte of large-size or without pyramidal polishing structure.
Further, there are metal grid lines（Metal grid lines I, metal grid lines II）Region can polish or do larger size gold word
The matte of tower improves the open-circuit voltage of solar cell to reduce recombination loss.
Further, device surface metal grid lines（Metal grid lines I, metal grid lines II）Total area coverage ratio is preferably 1 ~
3%, to improve the short circuit current of solar cell and ensure electric conductivity good enough.
Invention has the technical effect that：Under the premise of keeping the characteristic of the two-sided entering light of crystal-silicon solar cell, while obtaining height
The characteristic of open-circuit voltage and high short circuit current improves the generating capacity of crystal-silicon solar cell to the greatest extent.Its mechanism is logical
The amorphous silicon emitter and supporting structure crossed under metal grid lines area coverage obtain high open-circuit voltage, in not metal grid lines
Place is using the structure of heavily-doped p-type crystalline silicon mating surface antireflective passivation layer compared to conventional non-crystalline silicon/silicon/crystalline silicon heterogenous
Connection solar cell can reduce shading loss, the sunlight of more incidences is efficiently translated into photo-generated carrier, and can reduce photoproduction
Lateral transport recombination loss of the carrier in silicon chip surface region.In transmitting pole-face, the photohole of generation is in highly doped n-type layer
Enter inside body silicon under the promotion of the built in field of formation, then concentrate and flow to emitter region, forms the similar optically focused sun
The high current effect of battery, can further improve the Built-in potential of solar cell, to further increase the voltage of solar cell；
And the electronics generated can only flow to the metal electricity of the other one side of silicon chip because the highly doped n-type region of transmitting pole-face does not have electrode
Pole is collected.In addition, the present invention can completely avoid valuable electrically conducting transparent oxygen compared to HIT structures and HAC-D structures
The use of compound, while carrier can be decreased and transmit caused series resistance losses on TCO.
Description of the drawings
Attached Fig. 1 the structural representation of present invention.Wherein：1 is metal grid lines I；2 be heavily-doped p-type amorphous silicon layer；3 be this
Levy amorphous silicon passivation layer I；4 penetrate a layer I for passivated reflection reducing；5 attach most importance to doped p-type crystalline silicon field passivation layer I；6 be N-shaped crystal silicon chip；7
For intrinsic amorphous silicon passivation layer II；8 be highly doped n-type amorphous silicon layer；9 be transparent conductive oxide tco layer；10 be metal grid lines
II。
Specific implementation mode
The present invention will be described further by following embodiment.
Embodiment 1.
A kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure as shown in Fig. 1.N-shaped crystal silicon chip 6
It uses average-size for 1 micron of pyramid suede structure in transmitting pole-face, the plane of chemical polishing is used in other one side
Structure（Not making herbs into wool）.Passivation layer I 5 thickness in heavily-doped p-type crystalline silicon field is 1nm.Metal grid lines I 1 using from silicon chip surface to
It is the clad metal electrode of titanium/palladium/silver structure according to this outside, masked area occupies to emit the 1% of pole-face silicon area；Metal gate
For line II 10 using the electrode of fine silver grid line structure, masked area is the 3% of place silicon chip surface product.The structure carries on the back electric field surface entering light
Characteristic is weaker than transmitting pole-face, so need to be using transmitting pole-face as main side to light when its application.Such as it is used as single side entering light solar cell
It uses, then can plate one layer of metal as reflective layer in shady face, increase the short circuit current as single side entering light solar cell.
Two surfaces of the structure it is very excellent into light characteristic, can be used as main into smooth surface.Such as it is used as single side entering light
Solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase the short circuit as single side entering light solar cell
Electric current.
Embodiment 2.
A kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure as shown in Fig. 1.N-shaped crystal silicon chip 6
It uses average-size for 3 microns of pyramid suede structure in transmitting pole-face, the plane of chemical polishing is used in other one side
Structure（Not making herbs into wool）.Passivation layer I 5 thickness in heavily-doped p-type crystalline silicon field is 5nm.In metal grid lines I1 and heavily-doped p-type amorphous
There is the ITO of one layer of 10nm between silicon layer 2.Metal grid lines I 1 is fine silver gate line electrode, and masked area occupies to emit pole-face silicon chip
The 1.5% of area；For metal grid lines II 10 using the electrode of fine silver grid line structure, masked area is place silicon chip surface product
2.0%.Structure back of the body electric field surface is weaker than transmitting pole-face into light characteristic, so need to be using transmitting pole-face as main side to light when its application.
It is such as used as single side entering light solar cell, then can plate one layer of metal as reflective layer in shady face, increase and be used as single side entering light
The short circuit current of sun solar cell.
Two surfaces of the structure it is very excellent into light characteristic, can be used as main into smooth surface.Such as it is used as single side entering light
Solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase as single side entering light sun solar cell
Short circuit current.
Claims (9)
1. a kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure, it is characterized in that with N-shaped crystal silicon chip（6）Make
For substrate, transmitting pole-face is divided into emitter-conductive region and passivation-entering light region：Emitter-conductive region is outside by substrate
Successively by intrinsic amorphous silicon passivation layer（3）, heavily-doped p-type amorphous silicon layer（2）, metal grid lines I（1）It constitutes, passivation-entering light region
By substrate outward successively by heavily-doped p-type crystalline silicon field passivation layer I（5）, passivated reflection reducing penetrate a layer I（4）It constitutes, the two regions are handed over
Fork is distributed and is not overlapped；
It is carried on the back electric field surface structure and is followed successively by intrinsic amorphous silicon passivation layer II outward by substrate（7）, highly doped n-type amorphous silicon layer（8）、
Transparent conductive oxide tco layer（9）, metal grid lines II（10）, wherein metal grid lines II（10）Part covering transparent conductive oxide
Object tco layer（9）.
2. a kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that
Metal grid lines I（1）With heavily-doped p-type amorphous silicon layer（2）Between be inserted into a transition tco layer.
3. a kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that
The passivated reflection reducing penetrates a layer I（4）For silicon nitride.
4. a kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that
The emitter and heavily-doped p-type crystalline silicon field passivation layer I（5）Between carry out insulation processing.
5. a kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that
The heavily-doped p-type crystalline silicon field passivation layer I（5）Thickness be 1-300nm.
6. a kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that
The N-shaped crystal silicon chip（6）For two-sided making herbs into wool.
7. a kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that
N-shaped crystal silicon chip（6）Two-sided making herbs into wool situation：The matte of small size pyramid structure is used on one side, and in addition one side is using big
The pyramid matte of size or without pyramidal polishing structure.
8. a kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that
There is metal grid lines region to polish or do the pyramidal matte of large scale.
9. a kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure according to claim 1, it is characterized in that
The total area coverage ratio of device surface metal grid lines is 1 ~ 3%.
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| CN201810198911.8A CN108336164A (en) | 2018-03-12 | 2018-03-12 | A kind of local amorphous silicon/crystalline silicon heterojunction double-side solar cell structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113421943A (en) * | 2021-01-29 | 2021-09-21 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Heterojunction solar cell and preparation method thereof |
| CN115000188A (en) * | 2022-05-25 | 2022-09-02 | 中国科学院电工研究所 | Local contact structure for light-facing surface of crystalline silicon heterojunction solar cell |
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| CN115000188B (en) * | 2022-05-25 | 2024-01-19 | 中国科学院电工研究所 | Local contact structure for light-facing surface of crystalline silicon heterojunction solar cell |
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Application publication date: 20180727 |