CN108336157A - A kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field - Google Patents
A kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field Download PDFInfo
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- CN108336157A CN108336157A CN201810198895.2A CN201810198895A CN108336157A CN 108336157 A CN108336157 A CN 108336157A CN 201810198895 A CN201810198895 A CN 201810198895A CN 108336157 A CN108336157 A CN 108336157A
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- 229910021417 amorphous silicon Inorganic materials 0.000 title claims abstract description 42
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 38
- 229910052751 metal Inorganic materials 0.000 claims abstract description 35
- 239000002184 metal Substances 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 34
- 239000010703 silicon Substances 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000002161 passivation Methods 0.000 claims abstract description 27
- 239000013078 crystal Substances 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000005684 electric field Effects 0.000 claims abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 4
- 238000005498 polishing Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- UPSLECAHIMQGDX-UHFFFAOYSA-N 2h-pyran-6-carboxamide Chemical compound NC(=O)C1=CC=CCO1 UPSLECAHIMQGDX-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
A kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field, using N-shaped crystal silicon chip as substrate, transmitting pole-face is divided into emitter conductive region and passivation entering light region：The former is made of intrinsic amorphous silicon passivation layer, heavily-doped p-type amorphous silicon layer, metal grid lines I, and the latter is penetrated a layer I and constituted by highly doped n-type crystalline silicon field passivation layer I, passivated reflection reducing；Back of the body electric field surface is divided into passivation entering light region and back of the body electric field conductive region：The former penetrates a layer II by heavy doping crystal silicon layer, passivated reflection reducing and constitutes；The latter is made of intrinsic amorphous silicon passivation layer II, highly doped n-type non-crystalline silicon, metal grid lines II.The present invention maintains characteristic that is two-sided into light characteristic, while obtaining high open circuit voltage and high short circuit current, improves the generating capacity of crystal-silicon solar cell.The use of valuable transparent conductive oxide is avoided completely compared to HIT and HAC D structures, while being reduced carrier and being transmitted caused series resistance losses on TCO.
Description
Technical field
The invention belongs to solar cells and field of semiconductor devices.It is related to the technology of preparing of solar cell.
Background technology
For ground solar cell, the structure actual power generation of two-sided entering light is higher than the single side entering light of same nominal power
The understanding of solar cell is generally received by industry.The two-sided entering light solar cell of mainstream is with N-shaped crystal silicon chip at present
For substrate.One is the n-PERT structures based on pn homogeneity junction structures, feature is that short circuit current is big, and open-circuit voltage is low；It is another
Class is so that based on pn heterojunction structures, using HIT structures as representative, feature is that short circuit current is small, and open-circuit voltage is high.How to improve
The former open-circuit voltage and the short circuit current for improving the latter are always difficult point in the industry, and the direction made great efforts.As can in conjunction with two
The characteristics of person, invents a kind of new structure, while the advantages of obtain high short circuit current, high open circuit voltage, is expected to further increase
The performance of two-sided crystal-silicon solar cell.The pervious invention of University Of Nanchang is in the progress that this side up（Middle promulgated by the State Council
Bright patent, No. 201510776929.8）, structure is known as HAC-D structures, means that the structure combines HAC
（heterojunction of amorphous silicon and crystalline silicon）Hetero-junctions and diffusion are standby
Homojunction (Diffused homojunction of crystalline silicon)）.It can get compared to HIT structures
Higher short circuit current, and the characteristics of certifiable HIT structure high open circuit voltages.But the structure still makes progress space, and the present invention is just
It is to be further improved to HAC-D structures.Compared to the electric current and open circuit electricity that HAC-D structures can further improve solar cell
Pressure reduces series resistance, and reduces valuable transparent conductive oxide（TCO）Dosage.
Invention content
The main object of the present invention is to propose a kind of double-side solar cell knot of local amorphous silicon emitter crystalline silicon back surface field
Structure, in conjunction with the advantages of the high short circuit current of pn homojunctions and pn hetero-junctions high open circuit voltages, reasonable disposition device is constituted, with further
The generating efficiency for improving crystal silicon double-side solar cell, reduces the consumption of valuable raw material.
The present invention is achieved by the following technical solutions.
The double-side solar cell structure of a kind of local amorphous silicon emitter crystalline silicon back surface field of the present invention, with N-shaped crystalline substance
Body silicon chip（6）As substrate, transmitting pole-face is divided into emitter-conductive region and passivation-entering light region：Emitter-conduction region
Domain is by substrate outward successively by intrinsic amorphous silicon passivation layer（3）, heavily-doped p-type amorphous silicon layer（2）, metal grid lines I（1）It constitutes,
Passivation-entering light region is by substrate outward successively by highly doped n-type crystalline silicon field passivation layer I（5）, passivated reflection reducing penetrate a layer I（4）Structure
At.It the two region cross-distributions and is not overlapped.
To improve metal grid lines I（1）With heavily-doped p-type amorphous silicon layer（2）Between contact electric conductivity, preferably the two it
Between be inserted into a transition tco layer.
Passivated reflection reducing of the present invention penetrates a layer I（4）It is preferred that silicon nitride.
Emitter of the present invention and highly doped n-type crystalline silicon field passivation layer I（5）Between preferably carry out insulation processing.
Further, it is the performance of raising device, the highly doped n-type crystalline silicon field passivation layer I（5）Thickness it is preferred
1-300nm。
A kind of back of the body electric field of the double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field of the present invention
Face structure is divided into passivation-entering light region and back of the body electric field-conductive region：Passivation-entering light region is followed successively by heavy doping outward by substrate
Crystal silicon layer（7）, passivated reflection reducing penetrate a layer II（8）；Back of the body electric field-conductive region is followed successively by intrinsic amorphous silicon passivation layer by substrate outward
II（9）, highly doped n-type non-crystalline silicon（10）, metal grid lines II（11）.It the two region cross-distributions and is not overlapped.
Wherein, the heavy doping crystal silicon layer（7）Preferred p-type conductive layer；The passivated reflection reducing penetrates a layer II（8）It is preferred that
Aluminium oxide+silicon nitride laminated film.
Further, it is the performance of raising device, N-shaped crystal silicon chip of the present invention（6）Can with two-sided making herbs into wool, with into
One step improves solar cell short circuit current.
Further, N-shaped crystal silicon chip（6）Two-sided making herbs into wool situation can be different, use reduced size gold word on one side
The matte of tower structure, in addition one side is using the pyramid matte of large-size or without pyramidal polishing structure.
Further, there are metal grid lines（Metal grid lines I, metal grid lines II）Region can polish or do larger size gold word
The matte of tower improves the open-circuit voltage of solar cell to reduce recombination loss.
Further, device surface metal grid lines（Metal grid lines I, metal grid lines II）Total area coverage ratio is preferably 1 ~
3%, to improve the short circuit current of solar cell and ensure electric conductivity good enough.
Invention has the technical effect that：Under the premise of keeping the characteristic of the two-sided entering light of crystal-silicon solar cell, while obtaining height
The characteristic of open-circuit voltage and high short circuit current improves the generating capacity of crystal-silicon solar cell to the greatest extent.Its mechanism is logical
The amorphous silicon emitter and supporting structure crossed under metal grid lines area coverage obtain high open-circuit voltage, in not metal grid lines
Place is using the structure of highly doped n-type crystalline silicon field passivation layer mating surface antireflective passivation layer compared to conventional non-crystalline silicon/crystalline substance
Body silicon heterojunction solar battery can reduce shading loss, the sunlight of more incidences is efficiently translated into photo-generated carrier, and can
Lateral transport recombination loss of the reduction photo-generated carrier in silicon chip surface region.In transmitting pole-face, the photohole of generation is in weight
Enter inside body silicon under the promotion for the built in field that doped n-type layer is formed, then concentrates and flow to emitter region, form similar
The high current effect of concentrator solar cell, can further improve the Built-in potential of solar cell, to further increase sun electricity
The voltage in pond；And the electronics generated can only flow to the other one side of silicon chip because the highly doped n-type region of transmitting pole-face does not have electrode
Metal electrode be collected.In addition, the present invention can completely avoid compared to HIT structures and HAC-D structures it is valuable saturating
The use of bright conductive oxide, while carrier can be decreased and transmit caused series resistance losses on TCO.
Description of the drawings
Attached drawing 1 is schematic structural view of the invention.Wherein：1 is metal grid lines I；2 be heavily-doped p-type amorphous silicon layer；3 be this
Levy amorphous silicon passivation layer I；4 penetrate a layer I for passivated reflection reducing；5 be highly doped n-type crystalline silicon field passivation layer I；6 be N-shaped crystal silicon chip；7
Attach most importance to doped p-type crystalline silicon layer；8 penetrate a layer II for passivated reflection reducing；9 be intrinsic amorphous silicon passivation layer II；10 be highly doped n-type amorphous
Silicon；11 be metal grid lines II.
Specific implementation mode
The present invention will be described further by following embodiment.
Embodiment 1.
A kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field as shown in Fig. 1.N-shaped crystal
Passivated reflection reducing penetrates layer I 4 and passivated reflection reducing penetrates the region of layer II 8 to be all made of average-size be 3 microns having on the surface of silicon chip 6
Pyramid suede structure is all made of chemical throwing having intrinsic amorphous silicon passivation layer I 3 and the region of intrinsic amorphous silicon passivation layer II9
Optical surface structure（Without making herbs into wool）.Highly doped n-type crystalline silicon field passivation layer I5 thickness is 300nm；Heavy doping crystal silicon layer 7 uses p
Type adulterates, thickness 5nm；It is aluminium oxide+silicon nitride laminated film that passivated reflection reducing, which penetrates layer II 8,.Metal grid lines I 1 and metal gate
Line II 11 is the clad metal electrode of nickel copper/silver according to this since silicon chip surface, occupies the 3% of silicon chip surface product.
Two surfaces of the structure it is very excellent into light characteristic, can be used as main into smooth surface.Such as it is used as single side entering light
Solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase as single side entering light sun solar cell
Short circuit current.
Embodiment 2.
A kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field as shown in Fig. 1.N-shaped crystal
Passivated reflection reducing penetrates layer I 4 and passivated reflection reducing penetrates the region of layer II 8 to be all made of average-size be 1.0 microns having on the surface of silicon chip 6
Pyramid suede structure, in being all made of of region for having intrinsic amorphous silicon passivation layer I 3 and intrinsic amorphous silicon passivation layer II 9
Optical polishing surface texture（Without making herbs into wool）.Highly doped n-type crystalline silicon field passivation layer I5 thickness is 10nm；Heavy doping crystal silicon layer 7 is adopted
It is adulterated with p-type, thickness 20nm；It is aluminium oxide+silicon nitride laminated film that passivated reflection reducing, which penetrates layer II8,.Metal grid lines I 1 and metal
Grid line II 11 is the clad metal electrode of silver, occupies the 3% of silicon chip surface product.
Two surfaces of the structure it is very excellent into light characteristic, can be used as main into smooth surface.Such as it is used as single side entering light
Solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase as single side entering light sun solar cell
Short circuit current.
Embodiment 3.
A kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field as shown in Fig. 1.N-shaped crystal
Two surface gross areas of silicon chip 6 are the pyramid suede structure that average-size is 1.5 microns.Highly doped n-type crystalline silicon field
5 thickness of passivation layer I is 10nm；Heavy doping crystal silicon layer 7 is adulterated using p-type, thickness 20nm；Passivated reflection reducing penetrates layer II 8
Aluminium oxide+silicon nitride laminated film.Metal grid lines I 1 and metal grid lines II 11 is the clad metal electrode of silver, occupies silicon chip
The 3% of surface area.There is the ito thin film of one layer of 10nm thickness between heavily-doped p-type amorphous silicon layer 2 and metal grid lines I1；Highly doped n-type
There is the ito thin film of one layer of 10nm thickness between amorphous silicon layer 10 and metal grid lines II 11.
Two surfaces of the structure it is very excellent into light characteristic, can be used as main into smooth surface.Such as it is used as single side entering light
Solar cell uses, then can plate one layer of metal as reflective layer in shady face, increase as single side entering light sun solar cell
Short circuit current.
Claims (10)
1. a kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field, it is characterized in that with N-shaped crystal silicon chip
（6）As substrate, transmitting pole-face is divided into emitter-conductive region and passivation-entering light region：Emitter-conductive region is by base
Bottom is outward successively by intrinsic amorphous silicon passivation layer（3）, heavily-doped p-type amorphous silicon layer（2）, metal grid lines I（1）It constitutes, be passivated-into
Light region is by substrate outward successively by highly doped n-type crystalline silicon field passivation layer I（5）, passivated reflection reducing penetrate a layer I（4）It constitutes, the two
It region cross-distribution and is not overlapped；
It is carried on the back electric field surface structure and is divided into passivation-entering light region and back of the body electric field-conductive region：Passivation-entering light region is outside by substrate
It is followed successively by heavy doping crystal silicon layer（7）, passivated reflection reducing penetrate a layer II（8）；Back of the body electric field-conductive region is followed successively by intrinsic outward by substrate
Amorphous silicon passivation layer II（9）, highly doped n-type non-crystalline silicon（10）, metal grid lines II（11）, the two region cross-distributions and do not weigh
It is folded.
2. a kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field according to claim 1,
It is characterized in metal grid lines I（1）With heavily-doped p-type amorphous silicon layer（2）Between be inserted into a transition tco layer.
3. a kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field according to claim 1,
It is characterized in that the passivated reflection reducing penetrates a layer I（4）For silicon nitride.
4. a kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field according to claim 1,
It is characterized in the emitter and highly doped n-type crystalline silicon field passivation layer I（5）Between carry out insulation processing.
5. a kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field according to claim 1,
It is characterized in the highly doped n-type crystalline silicon field passivation layer I（5）Thickness be 1-300nm.
6. a kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field according to claim 1,
It is characterized in the heavy doping crystal silicon layer（7）For p-type electric-conducting layer；The passivated reflection reducing penetrates a layer II（8）For aluminium oxide+nitridation
Silicon laminated film.
7. a kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field according to claim 1,
It is characterized in the N-shaped crystal silicon chip（6）For two-sided making herbs into wool.
8. a kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field according to claim 1,
It is characterized in N-shaped crystal silicon chip（6）Two-sided making herbs into wool：The matte for using reduced size pyramid structure on one side, is in addition adopted on one side
With the pyramid matte of large-size or without pyramidal polishing structure.
9. a kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field according to claim 1,
It is characterized in having metal grid lines region to polish or do the pyramidal matte of large scale.
10. a kind of double-side solar cell structure of local amorphous silicon emitter crystalline silicon back surface field according to claim 1,
It is characterized in that the total area coverage ratio of device surface metal grid lines is 1 ~ 3%.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110931600A (en) * | 2019-11-16 | 2020-03-27 | 江西昌大高新能源材料技术有限公司 | Preparation method of HACL solar cell |
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