CN105826405A - Mono-crystalline silicon double-sided solar cell and preparation method thereof - Google Patents

Mono-crystalline silicon double-sided solar cell and preparation method thereof Download PDF

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CN105826405A
CN105826405A CN201610331351.XA CN201610331351A CN105826405A CN 105826405 A CN105826405 A CN 105826405A CN 201610331351 A CN201610331351 A CN 201610331351A CN 105826405 A CN105826405 A CN 105826405A
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solar cell
pyramid
back side
silicon
preparation
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盛赟
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Changzhou Trina Solar Energy Co Ltd
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Changzhou Trina Solar Energy Co Ltd
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Priority to PCT/CN2016/098553 priority patent/WO2017197811A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention discloses a mono-crystalline silicon double-sided solar cell, and belongs to the technical field of solar cells. A front pyramid-shaped texture surface, a front doped emitter junction, a front passivated anti-reflection medium layer and a front electrode are sequentially formed on the front of a mono-crystalline silicon substrate. A back pyramid-shaped texture surface, a back surface field, a back passivated anti-reflection medium layer and a back electrode are sequentially formed on the back of the mono-crystalline silicon substrate. The mono-crystalline silicon double-sided solar cell is characterized in that the back pyramid-shaped texture surface is a separated pyramid-shaped texture surface, the pyramid structure partially covers the mono-crystalline silicon substrate and is dispersedly distributed on the silicon substrate, and the area covered by the pyramid structure accounts for 20-90% of the back silicon substrate. The invention further discloses a preparation method of the mono-crystalline silicon double-sided solar cell. The minority carrier surface recombination and optical absorption characteristics of the double-sided solar cell are optimized, and the efficiency of quantum conversion is improved.

Description

A kind of monocrystal silicon double-side solar cell and preparation method thereof
Technical field
The present invention relates to a kind of solar cell and preparation method thereof, particularly relate to a kind of monocrystal silicon double-side solar cell and preparation method thereof, belong to technical field of solar cells.
Background technology
Pursue and improve battery conversion efficiency, reduce even maintaining manufacturing cost and be the target constantly pursued of industry and the place improving self competitiveness simultaneously.Relative to the conventional crystal silicon solar cell of one side light, double-side solar cell is just utilizing, two sensitive surfaces of the back of the body, it is possible to obtain higher density of photocurrent, improves generated output largely.According to installing ground and environment, photovoltaic generating system based on double-side solar cell can obtain the power gain of 10 to 30%.
Double-side solar cell structure includes: the matte appearance structure of front and back, pn-junction emitter stage, passivated reflection reducing dielectric layer, front and back electrode etc..Wherein, the matte at the back side can be effectively improved the absorption at the double-side cell back side of ground and Ambient, is the important feature of double-side solar cell.The pyramid distribution that the back side of double-side solar cell all uses the matte appearance structure similar with front, i.e. making herbs into wool to obtain at present is tight, the most overlapping.Although the pyramid of this tight distribution is conducive to absorbing direct light to greatest extent, but is not necessarily the optimal light absorbing structure diffused, and higher surface area can bring minority carrier recombination.Therefore, the structure of double-side solar cell needs to be optimized further.
Summary of the invention
The present invention is directed to above-mentioned technical problem present in prior art, it is provided that a kind of monocrystal silicon double-side solar cell, optimize solar cell minority carrier surface loading and optical absorption characteristic, improve conversion quantum efficiency.
Another aspect of the present invention, it is provided that the preparation method of a kind of monocrystal silicon double-side solar cell, improves conversion efficiency and the production efficiency of solar cell.
To this end, the present invention adopts the following technical scheme that
A kind of monocrystal silicon double-side solar cell, front pyramid matte (101) is sequentially formed in the front of monocrystalline substrate (100), front doping emitter junction (102), front passivated reflection reducing dielectric layer (103) and front electrode (104), back side pyramid matte (105) is sequentially formed at the back side of monocrystalline substrate, back surface field (106), passivating back anti-reflection dielectric layer (107) and backplate (108), it is characterized in that: described back side pyramid matte (105) is divergence type pyramid floss face, pyramid structure (105a) only partially covers monocrystalline substrate, pyramid structure (105a) is distributed on a silicon substrate dispersedly, the region covered by pyramid structure (105a) accounts for the 20%-90% of back side silicon substrate.
Further, the bottom side length of single pyramid structure (105a) is 1-7 μm.
Further, described front passivated reflection reducing dielectric layer (103) and passivating back anti-reflection dielectric layer (107) are respectively by silicon oxide, silicon nitride, silicon oxynitride, aluminium oxide, carborundum, non-crystalline silicon, microcrystal silicon, tin indium oxide or titanium oxide is the monofilm that forms of material or multilayer film.
Further, described front electrode (104), backplate (108) are silver, aluminum, copper, nickel, titanium, stannum, lead, cadmium, gold, one or more metals of zinc or its alloy.
Another aspect of the present invention, it is provided that the preparation method of a kind of monocrystal silicon double-side solar cell, is used for preparing described monocrystal silicon double-side solar cell, comprises the steps:
S1: at monocrystalline substrate surface wool manufacturing；
The doping of S2: front forms emitter junction；
S3: remove the impure glassy layer in the back side；
S4: wet chemistry method prepares back side separation pyramid appearance structure, and removes back side doped layer；
The doping of S5: the back side forms back surface field；
S6: preparation front, passivating back anti-reflection dielectric layer；
S7: preparation front, backplate.
In step s 4, wet chemistry method prepares the chemical agent that separation pyramid appearance structure in the back side used aqueous solutions of one or more mixing in sodium hydroxide, potassium hydroxide, Tetramethylammonium hydroxide, nitric acid, phosphoric acid, Fluohydric acid., ethanol, isopropanol or ethylene glycol；Preparation temperature is 60 to 80 DEG C, and the time is the 10-900 second.
Further, between step S2 and S3, it is also possible to comprise the steps: S2-1: deposition barrier layer, front.
Further, between step S5 and S6, also comprise the steps: S5-1: use Fluohydric acid. to remove the silicon oxide in front, phosphorosilicate glass and the Pyrex at the back side.
The monocrystal silicon double-side solar cell of the present invention, by arranging divergence type pyramid matte at the back side of battery, reduces the surface area of back of solar cell matte, it will be apparent that reduce photogenerated minority carriers being combined at back surface；The long wavelength light of front incidence increases in the reflection of back surface, and transmission reduces, and is again absorbed by solar cell；Meanwhile, the back side is covered with anti-reflection dielectric layer, and the optical reflection at the back side is not significantly increased, it is ensured that the optical absorption characteristic at the back side.Therefore, by back side separation pyramid appearance structure, minority carrier surface recombination and the optical absorption characteristic of double-side solar cell can be optimized, improve conversion quantum efficiency.
The preparation method of the monocrystal silicon double-side solar cell of the present invention, only increases by one wet chemical method and prepares back side separation pyramid appearance structure, and technique is relatively easy, is suitable for low-costly and in high volume, stable industry manufacture.
Accompanying drawing explanation
Fig. 1 is the structural representation of the monocrystal silicon double-side solar cell of the present invention；
Fig. 2 is the microphotograph of the divergence type pyramid matte of the present invention；
Wherein, 100 is monocrystalline substrate, and 101 is front pyramid matte, and 102 is front doping emitter junction, 103 is front passivated reflection reducing dielectric layer, 104 is front electrode, and 105 is back side pyramid matte, and 105a is pyramid structure, 106 is back surface field, 107 is passivating back anti-reflection dielectric layer, and 108 is backplate, and 109 is the region not covered by pyramid structure；In figure, corresponding product structure is only schematic diagram, not drawn on scale.
Detailed description of the invention
In order to make those skilled in the art be better understood from the present invention program, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete description.
Embodiment 1:
The present embodiment is the situation that the present invention is applied to p type single crystal silicon.As shown in Figure 1, front pyramid matte 101 is sequentially formed in the front of p type single crystal silicon substrate 100, front phosphorus doping emitter junction 102, front passivated reflection reducing dielectric layer 103 and front electrode 104, back side divergence type pyramid matte 105 is sequentially formed at the back side of p type single crystal silicon substrate, the boron doping back surface field 106 that back side boron doping is formed, passivating back anti-reflection dielectric layer 107 and backplate 108, wherein, as shown in Figure 2, in back side divergence type pyramid matte 105, pyramid structure 105a only partially covers monocrystalline substrate, pyramid structure 105a is distributed in the back side of monocrystalline substrate dispersedly, leave the region 109 that some are not covered by pyramid structure.
In the present embodiment, the region covered by pyramid structure 105a accounts for the 85% of whole back side silicon substrate, and the bottom side length of single pyramid structure 105a is 5 μm；Front passivated reflection reducing dielectric layer 103 is the monofilm being made up of silicon nitride, thickness 70 to 80nm；Passivating back anti-reflection dielectric layer 107 is the duplicature being made up of aluminium oxide and silicon nitride, wherein, and aluminium oxide thickness 20 to 30nm and silicon nitride thickness 50 to 70nm.Front electrode 104 and backplate 108 are silver gate electrode.
Embodiment 2:
The present embodiment is with the difference of embodiment 1: in back side divergence type pyramid matte 105, the region covered by pyramid structure 105a accounts for the 50% of whole back side silicon substrate, and the bottom side length of single pyramid structure 105a is 7 μm.Front passivated reflection reducing dielectric layer 103 is the monofilm being made up of silicon oxynitride, thickness 70 to 80nm；Passivating back anti-reflection dielectric layer 107 is the duplicature being made up of titanium oxide and silicon oxide, wherein, and titanium oxide thickness 20 to 30nm and silicon oxide thickness 50 to 70nm.Front electrode 104 and backplate 108 are copper electrode.
Embodiment 3:
The present embodiment is the situation that the present invention is applied to n type single crystal silicon.As shown in Figure 1, front pyramid matte 101 is sequentially formed in the front of n type single crystal silicon substrate 100, front boron-doping doping emitter junction 102, front passivated reflection reducing dielectric layer 103 and front electrode 104, back side divergence type pyramid matte 105 is sequentially formed at the back side of n type single crystal silicon substrate, the phosphorus doping back surface field 106 that back side phosphorus doping is formed, passivating back anti-reflection dielectric layer 107 and backplate 108, wherein, in back side divergence type pyramid matte 105, pyramid structure 105a only partially covers monocrystalline substrate, pyramid structure 105a is distributed in the back side of monocrystalline substrate dispersedly, the region covered by pyramid structure 105a accounts for the 30% of whole back side silicon substrate, the bottom side length of single pyramid structure 105a is 2 μm.
In the present embodiment, front passivated reflection reducing dielectric layer 103 is by the duplicature being made up of aluminium oxide and silicon nitride, wherein, and aluminium oxide thickness 20 to 30nm and silicon nitride thickness 50 to 70nm；The monofilm that passivating back anti-reflection dielectric layer 107 is made for silicon nitride, thickness 70 to 80nm；Front electrode 104 and backplate 108 are silver gate electrode.
Embodiment 4:
The present embodiment is with the difference of embodiment 3: in back side divergence type pyramid matte 105, the region covered by pyramid structure 105a accounts for the 65% of whole back side silicon substrate, and the bottom side length of single pyramid structure 105a is 4 μm.Front passivated reflection reducing dielectric layer 103 is by the duplicature being made up of tin indium oxide and non-crystalline silicon, wherein, and tin indium oxide thickness 60 to 80nm and non-crystalline silicon thickness 5 to 20nm；The duplicature that passivating back anti-reflection dielectric layer 107 is tin indium oxide and non-crystalline silicon is made, wherein, tin indium oxide thickness 60 to 80nm and non-crystalline silicon thickness 5 to 20nm；Front electrode 104 and backplate 108 are silver electrode.
Embodiment 5:
The preparation method of a kind of monocrystal silicon double-side solar cell, for preparing the P monocrystal silicon double-side solar cell described in embodiment 1, comprises the steps:
S1: at monocrystalline substrate surface wool manufacturing: using containing sodium hydroxide and the alkaline Woolen-making liquid of isopropanol, temperature is 80 DEG C, carries out making herbs into wool to p-type monocrystalline substrate 100 surface, forms front pyramid matte 101, removes silicon chip cutting damage layer simultaneously；
The doping of S2: front forms emitter junction: carries out phosphorus doping and forms front doping emitter junction 102, and phosphorus doping can use the tube furnace in phosphorus oxychloride source to spread, ion implanting or coat the diffusion of phosphorous impurity layer, and diffused sheet resistance is 40 to 200/；
S2-1: deposition barrier layer, front: using PECVD is 50 to 300nm at the technique barrier layer of front precipitated silica thin film, thickness；
S3: remove the impure glassy layer in the back side: use Fluohydric acid. to remove the phosphorosilicate glass layer at the back side；
S4: wet chemistry method prepares back side divergence type pyramid matte, and remove back side doping: using containing Tetramethylammonium hydroxide and the alkaline medicinal liquid of isopropanol, temperature is 80 DEG C, and the time is 10 to 900s, preparation forms back side divergence type pyramid matte 105, removes back side phosphorus doping layer simultaneously；
S5: the back side doping formed back surface field: carry out boron doping formed back surface field 106, boron doping the tube furnace of tribromide boron source can be used spread, ion implanting or coat boron-containing impurities layer diffusion, diffused sheet resistance is 60 to 200/；
S5-1: use Fluohydric acid. to remove the silicon oxide in front, phosphorosilicate glass and the Pyrex at the back side；
S6: preparation front, passivating back anti-reflection dielectric layer: use PECVD to prepare front side silicon nitride silicon 103 and the passivated reflection reducing dielectric layer 107 of backside oxide aluminum/silicon nitride；Front side silicon nitride silicon thickness is 70 to 80nm, and backside oxide aluminum thickness is 20 to 30nm, and silicon nitride thickness is 50 to 70nm；
S7: preparation front and back electrode: using silk screen printing to prepare argentiferous gate line electrode 104 and 108 respectively in front and back, and carry out high temperature sintering, sintering temperature is 850 to 900 DEG C.
Certainly, in step s 4, it would however also be possible to employ back side divergence type pyramid matte prepared by the acid medicinal liquid containing nitric acid and Fluohydric acid..
The preparation method of embodiment 2 is with reference to the preparation method of embodiment 1.
Embodiment 6:
The preparation method of a kind of monocrystal silicon double-side solar cell, for preparing the N monocrystal silicon double-side solar cell described in embodiment 3, comprises the steps:
S1: at monocrystalline substrate surface wool manufacturing: using containing sodium hydroxide and the alkaline Woolen-making liquid of isopropanol, temperature is 80 DEG C, carries out making herbs into wool to N-shaped monocrystalline substrate 100 surface, forms front matte pattern 101, removes silicon chip cutting damage layer simultaneously；
The doping of S2: front forms emitter junction: carries out boron doping and forms front boron doping emitter junction 102, and phosphorus doping can use the tube furnace of tribromide boron source spread, ion implanting or coat the diffusion of boron-containing impurities layer, and diffused sheet resistance is 60 to 200/；
S2-1: deposition barrier layer, front: using PECVD is 50 to 300nm at the technique barrier layer of front precipitated silica thin film, thickness；
S3: remove the impure glassy layer in the back side: use Fluohydric acid. to remove the Pyrex layer at the back side；
S4: wet chemistry method prepares back side divergence type pyramid matte, and remove back side doping: using containing Tetramethylammonium hydroxide and the alkaline medicinal liquid of isopropanol, temperature is 80 DEG C, and the time is 10 to 900s, preparation back side pyramid matte 105, removes back side boron-dopped layer simultaneously；
The doping of S5: the back side forms back surface field: carries out phosphorus doping and forms back surface field 106, and phosphorus doping can use the tube furnace in phosphorus oxychloride source to spread, ion implanting or coat the diffusion of phosphorous impurity layer, and diffused sheet resistance is 40 to 200/；
S5-1: use Fluohydric acid. to remove the silicon oxide in front, Pyrex and the phosphorosilicate glass at the back side；
S6: preparation front, passivating back anti-reflection dielectric layer: use PECVD to prepare front aluminium oxide/silicon nitride, 103 and the passivated reflection reducing dielectric layer 107 of back side silicon nitride silicon；Front aluminium oxide thickness is 20 to 30nm, and silicon nitride thickness is 50 to 70nm；Back side silicon nitride silicon thickness is 70 to 80nm；
S7: preparation front and back electrode: using silk screen printing to prepare argentiferous gate line electrode 104 and 108 respectively in front and back, and carry out high temperature sintering, sintering temperature is 850 to 900 DEG C.
The preparation method of embodiment 4 is with reference to the preparation method of embodiment 3.
Obviously, described embodiment is only the section Example of the present invention rather than whole embodiments.Based on the embodiment in the present invention, the every other embodiment that those of ordinary skill in the art are obtained under not making creative work premise, all should belong to the scope of protection of the invention.

Claims (8)

1. a monocrystal silicon double-side solar cell, front pyramid matte (101) is sequentially formed in the front of monocrystalline substrate (100), front doping emitter junction (102), front passivated reflection reducing dielectric layer (103) and front electrode (104), back side pyramid matte (105) is sequentially formed at the back side of monocrystalline substrate, back surface field (106), passivating back anti-reflection dielectric layer (107) and backplate (108), it is characterized in that: described back side pyramid matte (105) is divergence type pyramid floss face, pyramid structure (105a) only partially covers monocrystalline substrate, pyramid structure (105a) is distributed on a silicon substrate dispersedly, the region covered by pyramid structure (105a) accounts for the 20%-90% of back side silicon substrate.
Monocrystal silicon double-side solar cell the most according to claim 1, it is characterised in that: the bottom side length of single pyramid structure (105a) is 1-7 μm.
Monocrystal silicon double-side solar cell the most according to claim 1, it is characterised in that: it is the monofilm that forms of material or multilayer film that described front passivated reflection reducing dielectric layer (103) and passivating back anti-reflection dielectric layer (107) are respectively by silicon oxide, silicon nitride, silicon oxynitride, aluminium oxide, carborundum, non-crystalline silicon, microcrystal silicon, tin indium oxide or titanium oxide.
Monocrystal silicon double-side solar cell the most according to claim 1, it is characterised in that: described front electrode (104), backplate (108) they are silver, aluminum, copper, nickel, titanium, stannum, lead, cadmium, gold, one or more metals of zinc or its alloy.
5. a preparation method for monocrystal silicon double-side solar cell, is used for preparing the arbitrary described monocrystal silicon double-side solar cell of claim 1-4, comprises the steps:
S1: at monocrystalline substrate surface wool manufacturing；
The doping of S2: front forms emitter junction；
S3: remove the impure glassy layer in the back side；
S4: wet chemistry method prepares back side separation pyramid appearance structure, and removes back side doped layer；
The doping of S5: the back side forms back surface field；
S6: preparation front, passivating back anti-reflection dielectric layer；
S7: preparation front, backplate.
The preparation method of monocrystal silicon double-side solar cell the most according to claim 5, it is characterized in that: in step s 4, wet chemistry method prepares the chemical agent that separation pyramid appearance structure in the back side used aqueous solutions of one or more mixing in sodium hydroxide, potassium hydroxide, Tetramethylammonium hydroxide, nitric acid, phosphoric acid, Fluohydric acid., ethanol, isopropanol or ethylene glycol；Preparation temperature is 60 to 80 DEG C, and the time is the 10-900 second.
The preparation method of monocrystal silicon double-side solar cell the most according to claim 5, it is characterised in that: between step S2 and S3, also comprise the steps
S2-1: deposition barrier layer, front: using PECVD is 50 to 300nm at the technique barrier layer of front precipitated silica thin film, thickness.
The preparation method of monocrystal silicon double-side solar cell the most according to claim 5, it is characterised in that: between step S5 and S6, also comprise the steps
S5-1: use Fluohydric acid. to remove the silicon oxide in front, phosphorosilicate glass and the Pyrex at the back side.
CN201610331351.XA 2016-05-17 2016-05-17 Mono-crystalline silicon double-sided solar cell and preparation method thereof Pending CN105826405A (en)

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