CN108807565A - A kind of passivation contact electrode structure, applicable solar cell and production method - Google Patents
A kind of passivation contact electrode structure, applicable solar cell and production method Download PDFInfo
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- CN108807565A CN108807565A CN201810770113.8A CN201810770113A CN108807565A CN 108807565 A CN108807565 A CN 108807565A CN 201810770113 A CN201810770113 A CN 201810770113A CN 108807565 A CN108807565 A CN 108807565A
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- 238000002161 passivation Methods 0.000 title claims abstract description 41
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000010949 copper Substances 0.000 claims abstract description 53
- 229910052802 copper Inorganic materials 0.000 claims abstract description 53
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 53
- 239000000758 substrate Substances 0.000 claims abstract description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 18
- 230000008569 process Effects 0.000 claims abstract description 18
- 229920005591 polysilicon Polymers 0.000 claims abstract description 17
- 239000013081 microcrystal Substances 0.000 claims abstract description 9
- 229910021483 silicon-carbon alloy Inorganic materials 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 225
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 27
- 230000004888 barrier function Effects 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 16
- 239000000126 substance Substances 0.000 claims description 16
- 238000007747 plating Methods 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 239000011241 protective layer Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 5
- 210000002268 wool Anatomy 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 229910020923 Sn-O Inorganic materials 0.000 claims description 2
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- 210000004209 hair Anatomy 0.000 claims 1
- 229910003437 indium oxide Inorganic materials 0.000 claims 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims 1
- 239000011261 inert gas Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 229910052751 metal Inorganic materials 0.000 abstract description 7
- 239000002184 metal Substances 0.000 abstract description 7
- 238000005215 recombination Methods 0.000 abstract description 7
- 230000006798 recombination Effects 0.000 abstract description 7
- 229910052709 silver Inorganic materials 0.000 abstract description 4
- 239000004332 silver Substances 0.000 abstract description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 11
- 238000001465 metallisation Methods 0.000 description 9
- 230000006872 improvement Effects 0.000 description 8
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 5
- 229910052906 cristobalite Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 229910052682 stishovite Inorganic materials 0.000 description 5
- 229910052905 tridymite Inorganic materials 0.000 description 5
- 229910004205 SiNX Inorganic materials 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 210000004276 hyalin Anatomy 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 2
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 2
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000004050 hot filament vapor deposition Methods 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000006385 ozonation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005883 NiSi Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- VVRQVWSVLMGPRN-UHFFFAOYSA-N oxotungsten Chemical compound [W]=O VVRQVWSVLMGPRN-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000000108 ultra-filtration Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of passivation contact electrode structure, applicable solar cell and production method, the electrode structure include the doping semiconductor layer deposited in crystalline silicon substrate, and the copper electrode on doping semiconductor layer；The doping semiconductor layer is polysilicon, any one of microcrystal silicon or crystallite silicon-carbon alloy, thickness 5-100nm.In implementation process, the solar cell that is applicable in includes the passivation contact electrode structure at the back side of crystalline silicon substrate or two sides.The present invention gives the production method for making the solar cell with the passivation contact electrode structure.The present invention is by being passivated the contacts of all metal electrodes, reduce the surface recombination efficiency of photo-generated carrier, realize more thorough passivation effect, simultaneously, compared to existing process, the present invention program not only practicable volume production, and silver is replaced using electro-coppering as conductive layer, reduce battery production cost.
Description
Technical field
The invention belongs to solar battery sheet fields, and in particular to a kind of passivation contact electrode structure, the applicable sun
It can battery and production method.
Background technology
The operation principle of solar cell is exactly in brief by photo-generate electron-hole to being extracted before its is compound
And generate electric current.So how to reduce one of the core point that recombination losses are always solar cell research and development.It makes a general survey of twenties years
Carry out the technology development course of silicon based cells, at any time reduction recombination losses, promotes light induced electron/hole collection efficiency
It is placed on the most important thing, and proposes and is passivated including Al-BSF, is passivated using the front and back that deielectric-coating carries out, part or whole face
A series of technologies including height knot electric field and hetero-junctions passivation of formation etc..And it is blunt to use film tunnel layer to carry out full surface
The contact of all metal electrodes can be passivated by changing contact, and the string resistance that carrier axial transport caused by avoiding localized contact is brought increases
It sums it up complex effect, and can bear rear road high temperature compared to hetero-junctions passive metal this technique and be made and can preferably be compatible with
Existing PERC battery technologies, it is easier to realize that producing line upgrades.
And how to realize metallization is that surface passivation contact process realizes one of commercialized critical issue.And it is presently used
In surface passivation contact structures use physical vapour deposition (PVD), vapor deposition etc. laboratories metallization process be difficult to apply on a large scale
Volume production, and add burn-through (firing through) metallization process then to need more than 100nm even 300nm using silk-screen printing
Thick heavily doped semiconductor layer, this can bring the irradiation of bigger to lose, especially be become apparent on double-side cell, can also increase load
The auger recombination loss of stream.
Invention content
In view of the above-mentioned problems, the present invention proposes that one kind should be passivated contact electrode structure, applicable solar cell and system
Make method.
It realizes above-mentioned technical purpose, reaches above-mentioned technique effect, the invention is realized by the following technical scheme：
A kind of passivation contact electrode structure applied to solar cell includes that the doping deposited in crystalline silicon substrate is partly led
Body layer, and the copper electrode on doping semiconductor layer；The doping semiconductor layer is polysilicon, microcrystal silicon or crystallite silicon-carbon
Any one of alloy, thickness 5-100nm.Wherein, the doping semiconductor layer uses low-pressure chemical vapor deposition
(LPCVD) modes such as method, plasma gas-phase deposit (PECVD) or heated filament enhanced chemical vapor deposit (HWCVD) are in crystalline silicon substrate
Surface grow one semiconductor layer, then it is doped again and is formed.
Compared to it is existing using silk-screen printing make silver electrode and burn to doping semiconductor layer metallization process, this
Invention uses plating copper electrode cheap, that electric conductivity is strong, and due to being not necessarily to burn, it is only 5- that can be produced on thickness
On the doping semiconductor layer of 100nm, and realize that metal electrode is produced on crystalline substance in such a way that passivation contacts based on this structure
On silicon substrate.
As a further improvement on the present invention, can also include one layer to be arranged between crystalline silicon substrate and doping semiconductor layer
Film tunnel layer, thickness 0.5-10nm；The film tunnel layer is silica (SiO2), silicon nitride (SiNx), silicon oxynitride
(SiOxNy), aluminium oxide (Al2O3) and titanium oxide (TiO2) therein any.
Include the double-sided solar battery of above-described passivation contact electrode structure, the passivation contact electrode structure
It is produced on the back side or two sides of crystalline silicon substrate.Wherein, towards sunlight when " front " refers to being formed by solar cell working
One side, " back side " refers to being formed by solar cell back to the one side of sunlight.
A kind of embodiment of the present invention makes the passivation contact electrode structure at the back side of crystalline silicon substrate, in crystal silicon
The front of substrate makes doping crystal silicon layer and copper electrode.Wherein, the doping crystal silicon layer is by directly in crystalline silicon substrate table
It is doped and is formed on face.It is passivated in contact electrode structure with positioned at described in the back side positioned at the doping crystal silicon layer described in front
Doping semiconductor layer polarity is different, and wherein any one layer is identical as the doping polarity of crystalline silicon substrate in the two and doping concentration is big
In crystalline silicon substrate.
Second of embodiment of the present invention, the front and back in crystalline silicon substrate make the passivation and contact electrode
Structure, the doping semiconductor layer being located at described in front is different from positioned at the polarity of doping semiconductor layer described in the back side, any one
Doping semiconductor layer described in side is identical as the doping polarity of crystalline silicon substrate and doping concentration is more than crystalline silicon substrate.
As a further improvement on the present invention, it is included in front or the two sides deposition layer of transparent anti-reflection layer of battery, it is described
Transparent anti-reflection layer between doping crystal silicon layer and copper electrode between；The battery front side is identical with the transparent antireflective film at the back side or not
Together；The transparent anti-reflection layer includes any one or two kinds of dielectric film or transparent conductive film (TCO), the dielectric
Film is SiO2、SiNx、Al2O3、SiOxNyOr TiO2Any one of or two kinds, the TCO be tin indium oxide (ITO), mix tungsten oxygen
Change indium (IWO), Al-Doped ZnO (ZnOzAl), gallium-doped zinc oxide (ZnOzGA) and Zn-in-Sn-O (ZITO) any one or two
Kind.
As a further improvement on the present invention, made solar cell includes two-sided dereliction grid cell structure.By institute
Passivation contact electrode structure possessed by the solar cell stated is applied in the manufacturing process of dereliction grid cell structure.
As a further improvement on the present invention, further include selection emitter, the selection emitter setting battery just
The heavily doped layer in part contacted with copper electrode on doping crystal silicon layer described in face, the polarity and crystalline silicon substrate of the selection emitter
Polarity is opposite
According to the double-sided solar battery of above-described passivation contact electrode structure, production method includes following step
Suddenly：
Step 1：Crystalline silicon substrate is cleaned, making herbs into wool；
Step 2：As needed either two-sided making or film tunnel layer is not made at the back side of battery.Later in electricity
The front in pond makes the doping crystal silicon layer or doping semiconductor layer identical or opposite as the crystalline silicon substrate polarity；Specifically
For if making passivation contact electrode structure of the present invention in the front of battery, doping semiconductor layer is deposited in front；
If the electrode made by the front of battery does not have passivation contact structures, doping crystal silicon layer is deposited.Then, the back of the body of battery
Face makes the doping semiconductor layer different from the positive doping crystal silicon layer of the crystalline silicon substrate or doping semiconductor layer polarity；
Step 3：It includes dielectric film or any one or two kinds of single layers of TCO or double to be made on the front of battery or two sides
The transparent anti-reflection layer of layer.Including following point：1. transparent anti-reflection layer described in is produced on the front of battery, can be made at the back side of battery
Make transparent anti-reflection layer, battery anti-reflection layer can not also be made.2. the transparent anti-reflection layer includes two kinds of materials：Dielectric film and
TCO, the transparent anti-reflection layer positioned at the same face may include the monofilm that any type material therein is deposited, can also be simultaneously
The duplicature deposited including one or two kinds of materials.3. making transparent anti-reflection layer on two sides simultaneously, can sink on one side wherein
Product monofilm, either two sides is all monofilm or duplicature to another side deposition duplicature, and the material of anti-reflection layer is made on two sides
It can be identical, can also be different.
Step 4：Copper electrode is made in the front and back of battery：Including elder generation battery front and back according to grid line
Pattern makes pattern mask or slots to dielectric film, later at pattern mask opening or dielectric film fluting
Make copper electrode.If by using the back side copper electrode that pattern mask method makes, mask after the completion of electrode fabrication can be with
It removes, can also retain.
Further, in step 4, the region making that fluting is corresponded in the front of battery is opposite polarity with crystalline silicon substrate
The heavily doped layer in part, latter made copper electrode contacts to form selective emitter the heavily doped layer in the part therewith.
Further, in a kind of embodiment of the invention, to being slotted as transparent anti-reflection layer using dielectric film, step
In four, the method slotted on the dielectric film of the front and back of battery includes pattern mask-chemical method for etching, swashs
Light ablation, laser doping.
As a further improvement on the present invention, the process of copper electrode prepared on dielectric film is to use chemistry successively
Plating or galvanoplastic make nickel barrier layer, and copper conductive layer is made using galvanoplastic, make tin using chemical plating or galvanoplastic or silver is protected
Sheath.In the manufacturing process, it is also necessary to the cell piece behind nickel barrier layer or protective layer will have been made and be put into nitrogen or indifferent gas
It is sintered under body environment, forms nickel silicon alloy (NiSiX), sintering temperature is about 300-500 DEG C, and the time is about 0.5-2min.
As a further improvement on the present invention, in step 4, in the front of battery or backside deposition on the TCO
Copper electrode includes shortly copper conductive layer, further include or do not include seed layer or protective layer arbitrary one or two layers.
Beneficial effects of the present invention：This patent proposes a kind of passivation contact electrode knot using plating copper wiring metallization
Structure, compared to the electrode structure of existing PERC batteries, this patent is passivated contact electrode structure and carries out single side to solar cell
Or two-sided full surface passivation allows passivation effect to be more thoroughly passivated the contact of all metal electrodes, reduced photoproduction
The surface recombination efficiency of carrier.TCO can be used on passivation contact electrode structure simultaneously, avoided especially in emitter
The string resistance that carrier axial transport is brought increases and complex effect.
Meanwhile this patent provides a kind of metallization solution being applied on passivation contact electrode structure, compares
Can not volume production existing laboratory metallization process, not only volume production is feasible for this patent scheme, and uses electro-coppering as conductive layer
Silver is replaced, reduces battery production cost.Moreover, adding burn-through technology, this patent scheme to connect passivation compared to silk-screen printing
Heavily doped semiconductor layer thickness in touched electrode structure does not require, and cooperation TCO films are even more that heavily doped semiconductor layer can be made thick
Degree is less than 20nm, and passivation effect will not be caused to weaken due to burning pyroprocess, substantially increases two-sided rate, reduces irradiation
Recombination losses in loss and heavily doped layer.
Description of the drawings
Fig. 1 is the structural schematic diagram of the solar cell prepared by the first implementation using the present invention；
Fig. 2 is the structural schematic diagram of the solar cell prepared by second of implementation using the present invention；
Fig. 3 is the structural schematic diagram of the solar cell prepared by the third implementation using the present invention；
Fig. 4 is the structural schematic diagram of the solar cell prepared by the 4th kind of implementation using the present invention；
Fig. 5 is the structural schematic diagram of the solar cell prepared by the 5th kind of implementation using the present invention.
Specific implementation mode
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to embodiments, to the present invention
It is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not used to
Limit the present invention.
The application principle of the present invention is explained in detail below in conjunction with the accompanying drawings.Copper electrode described in this patent refers to electricity
The main part of pole, i.e. conductive layer are the metallic electrode of copper.Due to appeal " the transparent anti-reflection layer " be by dielectric film,
Transparent conductive film (TCO) or dielectric film and TCO, which combine, to be formed, in embodiments discussed below, as a result of difference
Material, be formed by " transparent anti-reflection layer " have passivation, conductive or anti-reflection one or secondly effect hyaline layer.Therefore in order to
Convenient for the clear and concise type of explanation, functional anti-reflection layer is called it as in each embodiment below.For example, being led to having
The anti-reflection layer of electro ultrafiltration is referred to as electrically conducting transparent and subtracts anti-reflection layer.
Embodiment 1
Fig. 1 illustrates an exemplary plot of manufacture solar cell according to the ... of the embodiment of the present invention.
Crystalline silicon substrate 110 can be N-shaped or p-type crystal silicon chip, and thickness is 70~250 μm.In this embodiment, crystal silicon serves as a contrast
Bottom 110 is preferably p-type crystal silicon chip, can be monocrystalline or polysilicon chip here.Cleaning and texturing is carried out to p-type crystalline silicon substrate 110
Processing.Phosphorus diffusion is carried out to the p-type crystalline silicon substrate front after making herbs into wool and forms N-shaped doping 120 emitter of crystal silicon layer.
Passivation contact electrode structure is made in cell backside.The passivation contact electrode structure is included in crystalline silicon substrate 110
Upper deposition is DOPOS doped polycrystalline silicon, and the doping semiconductor layer 140 of one of which, thickness are about in microcrystal silicon or crystallite silicon-carbon alloy
5-100nm, and the copper electrode 172 of galvanoplastic making is used on doping semiconductor layer 140.In some embodiments, described
Doping semiconductor layer 140 can be Uniform Doped or the non-uniform doping with concentration gradient.
In the present embodiment, doping semiconductor layer 140 is to deposit one layer of polysilicon layer using LPCVD methods or PECVD
140, thickness is preferably 5-50nm, then diffusion method or ion implantation is used to carry out p-type heavy doping to the polysilicon layer 140.
In the present embodiment, further include one layer in passivation contact electrode structure and use thermal oxidation method, Ozonation, nitric acid
Oxidizing process or chemical vapour deposition technique form SiO2Tunnel film layer 130, thickness are preferably 1-5nm.The tunnel film layer 130
Between doping semiconductor layer 140 and crystalline silicon substrate 110.
In this present embodiment, made using PECVD on battery front side n-type crystalline silicon layer 120 before making copper electrode
For SiNx hyaline membranes as passivated reflection reducing layer 150, thickness is preferably 60-150nm.And in 140 table of cell backside layer polysilicon film
TCO160 is deposited on face to form electrically conducting transparent anti-reflection layer.In this embodiment, TCO160 can be to be deposited using magnetron sputtering method
ITO layer, thickness is preferably 80-150nm.
The step of being patterned to battery front side and the back side and making copper electrode can successively be carried out respectively with two sides, also may be used
A wherein step or a few steps to be carried out at the same time on two sides.
In the present embodiment, Patterned masking layer first is made on battery front side passivated reflection reducing layer 150, in this embodiment
In, one layer of mask layer containing high molecular material is made by rotary coating on a surface first, which has photosensitive
Ingredient.Develop after carrying out selectivity UV exposures to mask layer using shadowed layer plate.It is open in mask layer using chemical method for etching
It slots to passivated reflection reducing layer 150 at place.Nickel is made at 150 fluting of passivated reflection reducing layer using chemical plating or galvanoplastic to stop
Layer, thickness is about 0.1-2 μm.In order to reduce the Carrier recombination caused by Metals-semiconductor contacts characteristic, contact electricity is reduced
Resistance, need after making nickel barrier layer or make after barrier layer/conductive layer/protection layer laminate by battery be placed in nitrogen environment and
The sintering processes that the time is about 0.5-2min are carried out at a temperature of about 300-500 DEG C, make barrier layer and n-type crystalline silicon layer contact position shape
At NiSiXAlloy promotes the contact performance of copper electrode.Later thickness is made on nickel barrier layer about using photoinduction galvanoplastic
For 3-20 μm of copper conductive layer, and it is about 0.1-2 μm of tin or silver-colored protective layer to make thickness using chemical plating or galvanoplastic, to be formed
Front copper electrode 171.
Similar photolithography method makes Patterned masking layer with front for use on the surfaces cell backside TCO160, and is covering
Film layer opening makes copper electrode, and being included in TCO160, galvanoplastic make the copper conductive layer that thickness is about 3-20 μm directly on a surface
And the silver-colored protective layer that thickness is about 0.1-2 μm is made on copper conductive layer using chemical plating, to form back side copper electrode 172.
It is two-sided while removing mask.
Embodiment 2
Fig. 2 illustrates the exemplary plot of the manufacture solar cell of second embodiment according to the present invention.
In this embodiment, crystalline silicon substrate 210 is N-shaped crystal silicon chip, can be monocrystalline or polysilicon chip here.To N-shaped
Crystalline silicon substrate 210 carries out cleaning and texturing processing.Boron is carried out to 210 front of n-type crystalline silicon substrate after making herbs into wool and diffuses to form p-type crystal silicon
220 emitter of layer.
One layer of polysilicon layer 230 is deposited using LPCVD methods or PECVD at 210 back side of crystalline silicon substrate, thickness is preferably 5-
Then 50nm uses ion implantation to carry out N-shaped heavy doping to the polysilicon layer 230.
The use of PECVD or atomic layer deposition (ALD) legal system as thickness is about 2- on battery front side p-type crystal silicon layer 220
The Al of 20nm2O3Layer 251 and the upper SiN using PECVD deposition 40-100nm at this layerxLayer 252, the two is stacked as passivation
Anti-reflection layer.
TCO240 is deposited on 230 surface of cell backside layer polysilicon film subtracts anti-reflection layer to form electrically conducting transparent.Herein
In embodiment, TCO240 can be to make IWO using reactive plasma sedimentation, and thickness is preferably 80-150nm.
Passivated reflection reducing layer 251 and 252 is carried out according to front-side metallization figure using laser ablation method on battery front side
Fluting.The heavily doped layer of localized p-type 280 is made to form selection emitter using ion implantation at fluting.
280 make the nickel barrier layer that thickness is about 0.1-2 μm using chemical plating or galvanoplastic at the heavily doped layer of localized p-type,
The copper conductive layer that thickness is about 3-20 μm is made on nickel barrier layer using photoinduction galvanoplastic, and uses chemical plating or galvanoplastic
It is about 0.1-2 μm of tin or silver-colored protective layer to make thickness.Battery is placed in nitrogen environment and is carried out at a temperature of about 300-500 DEG C
The sintering processes that time is about 0.5-2min make barrier layer form NiSi with n-type crystalline silicon layer contact positionXAlloy.Then electricity is formed
Pond front copper electrode 271.
Patterned masking layer 290 is made using photoetching process similar to Example 1 on the surfaces cell backside TCO260, and
Copper electrode is made in 290 opening of mask layer, include the thickness made of electroless plating method on the surfaces TCO260 is about 0.1-2 μm
Nickel seed layer, galvanoplastic make thickness be about 3-20 μm copper conductive layer and make galvanoplastic make thickness be about 0.1-2 μ
The silver-colored protective layer of m, to form cell backside electrode 272.The back side is without removing mask 290.
Embodiment 3
Fig. 3 illustrates another exemplary plot of manufacture solar cell according to the ... of the embodiment of the present invention.
In this embodiment, crystalline silicon substrate 310 is N-shaped crystal silicon chip, can be monocrystalline or polysilicon chip here.To N-shaped
Crystalline silicon substrate 310 carries out cleaning and texturing processing.It is heavily doped that phosphorus diffusion formation N-shaped is carried out to 310 front of n-type crystalline silicon substrate after making herbs into wool
Stray crystal silicon layer 320.
In cell backside SiN is formed using PECVDxTunnel film layer 330, thickness are preferably 1-5nm.
In SiO2The microcrystal silicon layer 340 deposited using PECVD or HWCVD methods in tunnel film layer 330, thickness is preferably 5-
Then 50nm uses ion implantation to carry out p-type doping to the microcrystal silicon layer 340.
The SiN of 80-150nm is deposited using PECVD in battery front side N-shaped heavy doping crystal silicon layer 320xLayer subtracts as passivation
Anti- layer 350.
Patterned masking layer is made using photoetching process similar to Example 1 on 340 surface of cell backside microcrystal silicon layer,
And copper electrode is made in mask layer opening, including it is about 3-20 μm to make thickness with galvanoplastic on 340 surface of microcrystal silicon layer
Copper conductive layer, to form cell backside copper electrode 372.Backside mask is removed later.
It is slotted to passivated reflection reducing layer 350 according to front-side metallization figure using laser ablation method on battery front side.
The nickel barrier layer that thickness is about 0.1-2 μm is made using chemical plating or galvanoplastic at fluting, simultaneously by battery merging nitrogen environment
The sintering processes that the time is about 0.5-2min are carried out at a temperature of about 300-500 DEG C, make barrier layer and n-type crystalline silicon layer contact position
Form NiSiXAlloy makes the copper conductive layer that thickness is about 3-20 μm using photoinduction galvanoplastic on nickel barrier layer, and uses
It is about 0.1-2 μm of tin or silver-colored protective layer that chemical plating or galvanoplastic, which make thickness,.Then front copper electrode 371 is formed.
It is dereliction grid cell to be formed by battery, which is characterized in that the secondary grid line width in both sides every is about 12-45 μ
M, the metallic copper gate line electrode that about 2-15 μm of height.Copper electrode 371 adjacent pair grating spacing in front is 1.10-1.55mm, the back of the body
Copper electrode 372 adjacent grating spacing in face is 0.85-1.30mm.Lamination interconnection can be used in the dereliction grid solar cell structure
Or intelligent network realizes cell piece interconnection without main grid interconnection technique.
Embodiment 4
Fig. 4 illustrates an exemplary plot of manufacture solar cell according to the ... of the embodiment of the present invention.
In this embodiment, crystalline silicon substrate 410 is N-shaped crystal silicon chip, can be monocrystalline or polysilicon chip here.To N-shaped
Crystalline silicon substrate 410 carries out cleaning and texturing processing.
In battery front side and the back side one layer of SiO is respectively formed using Ozonation sedimentation2Tunnel film layer 421 and 422,
Thickness is preferably 1-5nm.
In two sides SiO2Using PECVD, respectively one layer of deposition is first by amorphous silicon hydride and carbon in tunnel film layer 421 and 422
The thickness that element is formed is preferably the microcrystal silicon carbon alloy layer 430 and 440 of 5-50nm.Compared to amorphous silicon layer, crystallite silicon carbon layer is not
Easy bubble simultaneously possesses better stability.Diffusion method is used to carry out p-type doping to front crystallite silicon carbon layer 430 later, to the back side
Crystallite silicon carbon layer 440 carries out heavy n-type doping.In some embodiments, the microcrystalline carbon silicon layer 430 and/or 440 and with it is same
There is one layer of amorphous intrinsic layer as buffer layer between tunnelling film layer 421 and/or 422 on one side.
TCO450 is deposited on 430 surface of battery front side p-type crystallite silicon carbon layer subtracts anti-reflection layer to form electrically conducting transparent.Herein
In embodiment, TCO450 can be the ITO layer deposited using magnetron sputtering method, and thickness is preferably 80-150nm.
PECVD is used to make SiNx hyaline membranes as passivation in cell backside heavy n-type heavy doping crystallite silicon carbon layer 440
Anti-reflection layer 460, thickness are preferably 60-150nm.
Laser slotting is carried out on cell backside passivated reflection reducing layer 460.Galvanoplastic are used at 460 fluting of passivated reflection reducing layer
When making the nickel barrier layer that thickness is about 0.1-2 μm, battery is placed in nitrogen environment and being carried out at a temperature of about 300-500 DEG C
Between the about sintering processes of 0.5-2min, so that barrier layer and n-type crystalline silicon layer contact position is formed NiSiXAlloy promotes metal electrode
Contact performance.The copper conductive layer that thickness is about 3-20 μm is made on nickel barrier layer using photoinduction galvanoplastic later, and is made
The tin protective layer that thickness is about 0.1-2 μm is made with chemical plating or galvanoplastic, to form cell backside electrode 472.
Patterned masking layer is made using photolithography method on the surfaces battery front side TCO450, and in mask layer opening system
Make copper electrode, include the nickel seed layer that galvanoplastic make that thickness is about 0.1-2 μm on the surfaces TCO450, galvanoplastic make thickness
About 3-20 μm of copper conductive layer and electroless plating method makes the tin protective layer that thickness is about 0.1-2 μm, to form battery front side
Electrode 471.Finally remove mask.
Embodiment 5
Fig. 5 illustrates an exemplary plot of manufacture solar cell according to the ... of the embodiment of the present invention.
In this embodiment, crystalline silicon substrate 510 is p-type crystal silicon chip, can be monocrystalline or polysilicon chip here.To p-type
Crystalline silicon substrate 510 carries out cleaning and texturing processing.
In battery front side and the back side one layer of SiO is respectively formed using hot oxygen oxidizing process sedimentation2Tunnel film layer 521 and 522,
Thickness is preferably 1-5nm.
In two sides SiO2One layer of polysilicon layer 530 and 540 is respectively deposited using LPCVD methods in tunnel film layer 521 and 522,
Thickness is preferably 5-50nm, then diffusion method is used to carry out N-shaped doping to front polysilicon layer 530, to back side polysilicon layer 540
Carry out heavily p-type doping.
Each deposition thickness is preferably on the N-shaped and p-type film layer 530 at battery front side and the back side and 540 surfaces
The TCO551 of 80-150nm and 552 subtracts anti-reflection layer to form electrically conducting transparent.
All use photoetching process according to the grid line of respective surface metal polarizing electrode on battery front side and back side TCO551 and 552
Graphic making Patterned masking layer.
Just galvanoplastic are being used to make the nickel seed that thickness is about 0.1-2 μm on back side TCO551 and 552 surfaces in battery
Layer, galvanoplastic make the copper conductive layer that thickness is about 3-20 μm and electroless plating method makes the tin protection that thickness is about 0.1-2 μm
Layer, to form battery front side electrode 571 and backplate 572.Last two-sided removal mask.
The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention.The technology of the industry
Personnel are it should be appreciated that the present invention is not limited to the above embodiments, and the above embodiments and description only describe this
The principle of invention, without departing from the spirit and scope of the present invention, various changes and improvements may be made to the invention, these changes
Change and improvement all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and its
Equivalent thereof.
Claims (13)
1. a kind of passivation contact electrode structure applied to solar cell, it is characterised in that：Including being deposited in crystalline silicon substrate
Doping semiconductor layer, and the copper electrode on doping semiconductor layer；The doping semiconductor layer is polysilicon, microcrystal silicon
Or any one of crystallite silicon-carbon alloy, thickness 5-100nm.
2. passivation contact electrode structure according to claim 1, it is characterised in that：It can also include one layer to be arranged in crystal silicon
Film tunnel layer between substrate and doping semiconductor layer, thickness 0.5-10nm；The film tunnel layer is silica, nitridation
Silicon, silicon oxynitride, aluminium oxide and titanium oxide are therein any.
3. including the double-sided solar battery of passivation contact electrode structure as claimed in claim 1 or 2, passivation contact electricity
Pole structure fabrication is at the back side or two sides of crystalline silicon substrate.
4. double-sided solar battery according to claim 3, it is characterised in that：Described in being made at the back side of crystalline silicon substrate
It is passivated contact electrode structure, makes doping crystal silicon layer and copper electrode in the front of crystalline silicon substrate, the doping being located at described in front is brilliant
Silicon layer and the doping semiconductor layer polarity in passivation contact electrode structure described in the back side are different and wherein any one in the two
Layer and doping concentration identical as the doping polarity of crystalline silicon substrate is more than crystalline silicon substrate.
5. double-sided solar battery according to claim 3, it is characterised in that：The front and back in crystalline silicon substrate
The passivation contact electrode structure is made, is partly led with positioned at the doping described in the back side positioned at the doping semiconductor layer described in front
The polarity of body layer is different, and the doping semiconductor layer described in arbitrary side is identical as the doping polarity of crystalline silicon substrate and doping concentration is big
In crystalline silicon substrate.
6. double-sided solar battery according to claim 4 or 5, it is characterised in that：It is included in the front or two sides of battery
Layer of transparent anti-reflection layer is deposited, the transparent anti-reflection layer is between doping crystal silicon layer and copper electrode；The battery front side and
The transparent antireflective film at the back side is identical or different；The transparent anti-reflection layer includes any one of dielectric film or transparent conductive film
Or two kinds, the dielectric film is any one of silica, silicon nitride, silicon oxynitride, aluminium oxide or titanium oxide or two kinds,
The transparent conductive film is tin indium oxide, tungsten-doped indium oxide, Al-Doped ZnO, gallium-doped zinc oxide and Zn-in-Sn-O any one
Or two kinds.
7. double-sided solar battery according to claim 4 or 5, it is characterised in that：Made solar cell includes
Two-sided dereliction grid cell structure.
8. double-sided solar battery according to claim 4, it is characterised in that：Further include selection emitter, the choosing
It selects emitter and the heavily doped layer in part contacted with copper electrode on the doping crystal silicon layer described in battery front side, selection hair is set
The polarity of emitter-base bandgap grading is opposite with crystalline silicon substrate polarity.
9. a kind of production method of the double-sided solar battery of the passivation contact electrode structure prepared described in claim 4,5 or 8,
It is characterized by comprising the following steps：
Step 1：Crystalline silicon substrate is cleaned, making herbs into wool；
Step 2：Including or be not included in the back side of battery or two-sided making film tunnel layer, later battery front system
Make the doping crystal silicon layer or doping semiconductor layer identical or opposite with the crystalline silicon substrate polarity, make at the back side of battery and
The positive doping crystal silicon layer of the crystalline silicon substrate or the different doping semiconductor layer of doping semiconductor layer polarity；
Step 3：The front of battery or two sides make include dielectric film or any one or two kinds of single layer of transparent conductive film or
Double-layered transparent anti-reflection layer；
Step 4：Copper electrode is made in the front and back of battery：Including elder generation battery front and back according to grid line pattern
It makes pattern mask or slots to dielectric film, made at pattern mask opening or dielectric film fluting later
Copper electrode.
10. the preparation method of solar cell according to claim 9, it is characterised in that：In step 4, battery just
Face correspond to fluting region make with the heavily doped layer in the opposite polarity part of crystalline silicon substrate, the heavily doped layer in the part with make later
The copper electrode of work contacts to form selective emitter.
11. the preparation method of solar cell according to claim 10, it is characterised in that：The front of battery in step 4
Include pattern mask-chemical method for etching, laser ablation, laser doping with the method slotted on the dielectric film at the back side.
12. the preparation method of the solar cell according to claim 9 or 11, it is characterised in that：The institute on dielectric film
The process of the copper electrode of preparation is that chemical plating or galvanoplastic is used to make nickel barrier layer successively, and it is conductive to make copper using galvanoplastic
Layer makes tin or silver-colored protective layer using chemical plating or galvanoplastic；It further include the electricity that will have been made behind nickel barrier layer or protective layer
Pond piece is put under nitrogen or inert gas environment and is sintered, and forms nickel silicon alloy, sintering temperature is about 300-500 DEG C, the time
About 0.5-2min.
13. the preparation method of solar cell according to claim 9, it is characterised in that：In step 4, battery just
The copper electrode of face or backside deposition in the transparent conductive film includes shortly copper conductive layer, further includes or including seed layer
Or the arbitrary one or two layers of protective layer.
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