CN109216509A - A kind of interdigitation back contacts heterojunction solar battery preparation method - Google Patents
A kind of interdigitation back contacts heterojunction solar battery preparation method Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a kind of preparation methods of back contacts heterojunction solar battery.Through over cleaning, go to the front of single crystal silicon substrate of damaging layer, making herbs into wool to be sequentially depositing passivation layer before intrinsic amorphous silicon, positive N-type non-crystalline silicon layer and anti-reflection layer；Passivation layer is carried on the back in cell backside deposition intrinsic amorphous silicon；P-type non-crystalline silicon layer is deposited with mask method on the surface of back passivation layer, then the dielectric isolation layer between Direct precipitation P-type non-crystalline silicon layer and N-type non-crystalline silicon layer, and is performed etching using photoetching process by preset dielectric isolation layer width；Back side N-type non-crystalline silicon layer is further deposited with mask method；Transparent conductive film, metal film formation contact layer are finally sequentially depositing using masking process, complete solar cell preparation of the invention.The present invention improves the preparation process precision of HBC single crystal silicon solar cell backside structure figure, reduces spacer width, improves the short-circuit current density of the collection probability and HBC solar cell of photo-generated carrier.
Description
Technical field
The present invention relates to technical field of solar batteries, and in particular to a kind of interdigitation back contacts heterojunction solar battery system
Preparation Method.
Background technique
Interdigitation back contacts hetero-junctions single crystal silicon solar cell (Interdigitated Back Contact Silicon
Heterojunction Solar Cell, abbreviation HBC solar cell) have both interdigitation back contacts solar cell
(Interdigitated back contact Solar Cell, abbreviation IBC solar cell) and with the heterogeneous of thin intrinsic layer
Connection solar cell (Heterojunction with Intrinsic Thin-layer Solar Cell, abbreviation HIT sun electricity
Pond) the advantages of, both removed front surface metal electrode, reduce shading loss, obtain biggish short circuit current, further through
The intrinsic amorphous silicon passivation layer that one layer of high quality is inserted between heavily doped amorphous silicon and crystalline silicon significantly reduces interfacial state, subtracts
Surface recombination is lacked, has improved open-circuit voltage, has been the current highest single crystal silicon solar cell of photoelectric conversion efficiency in the world.
General interdigitation back contacts heterojunction solar battery front cross-sectional structure is followed successively by n type single crystal silicon base from inside to outside
Body, front intrinsic amorphous silicon passivation layer, positive N-type non-crystalline silicon layer, anti-reflection layer, the back side is followed successively by n type single crystal silicon base from inside to outside
Body, back side intrinsic amorphous silicon passivation layer, spaced back side P-type non-crystalline silicon layer and N-type non-crystalline silicon layer, connect dielectric isolation layer
Contact layer.Wherein, dielectric isolation layer is between emitter and base stage, since separation layer top is without built in field, so at this
The photo-generated carrier of generation pole can only be launched by diffusion or base stage is collected.Spacer width is bigger, photo-generated carrier it is defeated
Long-distance is longer, and Carrier recombination probability is higher, and short-circuit current density is caused to reduce.
Although the high conversion efficiency of HBC solar cell is currently limited to laboratory research, also not extensive industry
Change.Existing mainstream technology Zhong Ge research institution mostly uses greatly two step photoetching processes to realize backside structure figure.Although photoetching process
Precision is high, but since the use of chemical reagent other in processing step considerably increases the preparation cost of battery, while gluing, preceding
Dry, expose, develop, etch and remove photoresist and etc. cause its complex process degree increase, production efficiency reduce, hinder HBC too
The large-scale promotion in positive electricity pond.Mask method is the preparation process of another backside structure figure, because of the limitation of this method itself
Property, precision be far below photoetching process, cause spacer width larger, generally 50 microns or more.Spacer width is larger to be led
The reduction of P-type non-crystalline silicon layer and N-type non-crystalline silicon layer area is caused, the decline of carrier collection efficiency causes the short circuit current of battery close
Degree reduces.
Summary of the invention
The purpose of the present invention is to provide a kind of interdigitation back contacts heterojunction solar battery preparation methods, using a step light
It carves the preparation process combined with mask method and forms HBC back of solar cell structure graph, to make up using only photoetching process or cover
Deficiency present in embrane method reduces the preparation cost of battery, improves craft precision, reduces spacer width, improves photoproduction current-carrying
The short-circuit current density of the collection probability and HBC solar cell of son.
To achieve the above object the invention adopts the following technical scheme:
A kind of preparation method of back contacts heterojunction solar battery, comprising the following steps:
(a) single crystal silicon substrate cleaned, remove damaging layer, making herbs into wool；
(b) treated, and single crystal silicon substrate uses PECVD to prepare front intrinsic amorphous silicon passivation layer；
(c) PECVD deposits front-surface field of the positive N-type non-crystalline silicon layer as solar cell；
(d) anti-reflection layer is deposited with PECVD in positive N-type non-crystalline silicon layer；
(e) back side of single crystal silicon substrate deposits back side intrinsic amorphous silicon passivation layer using PECVD, makes the entire back of its covering
Face region；
It (f) is carrier gas and diluent gas, silane as reaction using diborane or trimethyl borine as impurity gas, hydrogen
Gas deposits P-type non-crystalline silicon layer as emitter by PECVD by masking process；
(g) dielectric isolation layer is deposited by PECVD by masking process；
(h) it by photoetching technique, performs etching, completes non-to P-type non-crystalline silicon layer and N-type according to preset spacer width
The preparation of dielectric isolation layer between crystal silicon layer；
(i) on the basis of above-mentioned solar cell back surface, using phosphine as impurity gas, hydrogen as carrier gas and carrier gas
Body, silane are reaction gas, by masking process by PECVD deposited n-type amorphous silicon layer as back surface field；
(j) it is deposited using masking process by PVD or CVD method in the P-type non-crystalline silicon layer and N-type non-crystalline silicon layer surface
Transparent conductive oxide film, as conductive layer；
(k) on the transparent conductive oxide film using using masking process by PVD by the way of deposited metal electricity
The preparation of solar cell of the invention is completed in pole.
As a further solution of the present invention, step (a) specific steps are successively are as follows: RCA standard cleaning removes silicon chip surface
Particle and organic matter etc.；It is placed into after Wafer Cleaning in 20% NaOH aqueous slkali, removes surface caused by slice process
Damaging layer；Immerse NaOH, Na2SiO3, carry out making herbs into wool in IPA mixed solution；Acid is carried out to the silicon chip surface after making herbs into wool using HCL
It washes, to neutralize the lye for remaining in silicon chip surface, the removal remaining metal impurities of silicon chip surface；Silicon is cleaned using HF solution
Piece, to remove the silicon dioxide layer of silicon chip surface and form Si-H passivation key, last nitrogen drying with the dangling bonds of silicon chip surface
It is spare.
As a further solution of the present invention, HBC battery is prepared using the technique that a step photoetching process is combined with mask method
Backside structure figure.
As a further solution of the present invention, the layer material that is dielectrically separated from is by one kind of nitride, oxide, amorphous silicon
Or a variety of compositions, the width of dielectric isolation layer are 10-50 μm.
As a further solution of the present invention, the step of being completed in step (b) to step (j) using PECVD is available
Filament CVD is realized.
As a further solution of the present invention, step (f) and the sequence of step (i) technique can be adjusted according to the actual situation
It changes；Step (b), step (c), step (d) can be in step (e), step (f), step (g), step (h), step (i), steps (j)
Or probable rear progress before step (k).
As a further solution of the present invention, the design of mask plate needed for step (f) is based on required p-type amorphous
The design of requirement of the silicon layer to pattern, mask plate needed for step (i) wants pattern based on required N-type non-crystalline silicon layer
It asks；Its exposure mask plate material is the nonmetallic materials such as metal or quartz.
As a further solution of the present invention, backing transparent conductive oxide film is with a thickness of 80-150nm, material
One of ITO, AZO, IWO, FTO and GZO film or a variety of laminations are constituted, and the electrode material is aluminium, silver, copper or gold
Belong to alloy.
As a further solution of the present invention, intrinsic amorphous silicon passivation layer thickness in front is 1-15nm, positive N-type amorphous silicon
For layer front-surface field with a thickness of 1-15nm, back side intrinsic amorphous silicon passivation layer thickness is 1-15nm, the back side N-type non-crystalline silicon layer
With a thickness of 10-100nm, the back side P-type non-crystalline silicon layer with a thickness of 10-100nm.
As a further solution of the present invention, for anti-reflection layer with a thickness of 50-200nm, material is silicon nitride film, silica
The lamination that film is either made of silicon nitride film and silicon oxide film.
The beneficial effects of the present invention are: to prepare back contacts heterogeneous for the method that the present invention is combined with exposure mask using a step photoetching
On the one hand the backside structure figure of connection solar cell uses photoetching technique when preparing separation layer, craft precision can be improved, reduce
Spacer width, improves the collection rate of carrier, to improve the short-circuit current density of HBC solar cell, compensates for mask method
Disadvantage in terms of precision deficiency；On the other hand relative to multistep photoetching process, by the present invention in that photoetching can be reduced with mask method
Number reduces complex process degree, so that production efficiency can be improved, and reduces use damage caused by silicon wafer of chemical reagent
Evil.Preparation method of the present invention is suitble to the requirement of HBC solar cell scale of mass production.
Detailed description of the invention
Fig. 1 is general interdigitation back contacts heterojunction solar battery cross-sectional view of the structure；
Wherein, 1.N type single crystal silicon substrate, 2. front intrinsic amorphous silicon passivation layers, 3. positive N-type non-crystalline silicon layers, 4. anti-reflections
Layer, 5. back side intrinsic amorphous silicon passivation layers, 6. back side N-type non-crystalline silicon layers, 7.P type amorphous silicon layer, 8. contact layers, 9. are dielectrically separated from
Layer.
Fig. 2 is the preparation method flow chart of back contacts heterojunction solar battery in the present invention.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Whole elaboration.
As shown in Figure 1, a kind of back contacts heterojunction solar battery, by taking N-type silicon makees substrate as an example, including n type single crystal silicon base
Body 1, front intrinsic amorphous silicon passivation layer 2, positive N-type non-crystalline silicon layer 3, anti-reflection layer 4, back side intrinsic amorphous silicon passivation layer 5, the back side
N-type non-crystalline silicon layer 6, P-type non-crystalline silicon layer 7, contact layer 8, dielectric isolation layer 9.
Interdigitation back contacts heterojunction solar battery back side preparation method schematic diagram as shown in connection with fig. 2, to of the invention
Specific embodiment is described as follows.
(a) single crystal silicon substrate 1 cleaned, remove damaging layer, making herbs into wool；Specific steps are successively are as follows: RCA standard cleaning,
Remove particle and the organic matter etc. of silicon chip surface；It is placed into after Wafer Cleaning in 20% NaOH aqueous slkali, removes slice process
In caused by surface damage layer；Immerse NaOH, Na2SiO3, carry out making herbs into wool in IPA mixed solution；Using HCL to the silicon after making herbs into wool
Piece surface carries out pickling, to neutralize the lye for remaining in silicon chip surface, the removal remaining metal impurities of silicon chip surface；Using HF
Solution cleaning silicon chip, to remove the silicon dioxide layer of silicon chip surface and form Si-H passivation key with the dangling bonds of silicon chip surface, most
Nitrogen is dried for standby afterwards；
(b) treated, and single crystal silicon substrate 1 uses PECVD to prepare front intrinsic amorphous silicon passivation layer 2；
(c) PECVD deposits front-surface field of the positive N-type non-crystalline silicon layer 3 as solar cell；
(d) anti-reflection layer 4 is deposited with PECVD in positive N-type non-crystalline silicon layer 3；
(e) back side of single crystal silicon substrate 1 deposits back side intrinsic amorphous silicon passivation layer 5 using PECVD, keeps its covering entire
Rear surface regions；
(f) with diborane (B2H6) or trimethyl borine (TMB) be used as impurity gas, hydrogen (H2) it is carrier gas and carrier gas
Body, silane (SiH4) it is used as reaction gas, P-type non-crystalline silicon layer 7 is deposited by PECVD by masking process and is used as emitter；
(g) dielectric isolation layer 9 is deposited by PECVD by masking process；
(h) it by photoetching technique, performs etching, is completed to P-type non-crystalline silicon layer 7 and N-type according to preset spacer width
The preparation of dielectric isolation layer 9 between amorphous silicon layer 6；
(i) on the basis of above-mentioned solar cell back surface, with phosphine (PH3) it is used as impurity gas, hydrogen (H2) it is carrier gas
With diluent gas, silane (SiH4) it is reaction gas, by masking process by PECVD deposited n-type amorphous silicon layer 6 as back
Face；
(j) heavy by PVD or CVD method using masking process in the P-type non-crystalline silicon layer 7 and 6 surface of N-type non-crystalline silicon layer
Product transparent conductive oxide film, as conductive layer；
(k) on the transparent conductive oxide film in such a way that masking process is by PVD deposit metal electrodes, it is complete
At the preparation of solar cell of the invention.
Front intrinsic amorphous silicon passivation layer 5 is with a thickness of 1-15nm, preferred thickness 2-4nm.The positive N-type amorphous silicon
Layer front-surface field 3 is with a thickness of 1-15nm；Anti-reflection layer 4 with a thickness of 50-200nm, material be silicon nitride film, silicon oxide film or
Person is the lamination being made of silicon nitride film and silicon oxide film；The back side intrinsic amorphous silicon passivation layer 5 is with a thickness of 1-
15nm, preferred thickness 2-4nm；Back side N-type non-crystalline silicon layer 6 with a thickness of 10-100nm, preferred thickness 20-50nm；Back side p-type
Amorphous silicon layer 7 with a thickness of 10-100nm, preferred thickness 20-50nm；The width of insulating backside separation layer 9 is 10-50 μm, preferably
Width is 5-15 μm, and the insolated layer materials are made of nitride, oxide, the one or more of amorphous silicon；Backing transparent is led
For oxide film with a thickness of 80-150nm, material can be one of ITO, AZO, IWO, FTO and GZO film or a variety of
Lamination is constituted；Electrode material can be aluminium, silver, copper or metal alloy.
The above is present pre-ferred embodiments, for the ordinary skill in the art, according to the present invention
Introduction, in the case where not departing from the principle of the present invention and spirit, changes, modifications, replacement and change that embodiment is carried out
Type is still fallen within protection scope of the present invention.
Claims (10)
1. a kind of preparation method of back contacts heterojunction solar battery, which comprises the following steps:
(a) single crystal silicon substrate cleaned, remove damaging layer, making herbs into wool；
(b) treated, and single crystal silicon substrate uses PECVD to prepare front intrinsic amorphous silicon passivation layer；
(c) PECVD deposits front-surface field of the positive N-type non-crystalline silicon layer as solar cell；
(d) anti-reflection layer is deposited with PECVD in positive N-type non-crystalline silicon layer；
(e) back side of single crystal silicon substrate deposits back side intrinsic amorphous silicon passivation layer using PECVD, it is made to cover entire back panel
Domain；
It (f) is carrier gas and diluent gas, silane as reaction gas using diborane or trimethyl borine as impurity gas, hydrogen
Body deposits P-type non-crystalline silicon layer as emitter by PECVD by masking process；
(g) dielectric isolation layer is deposited by PECVD by masking process；
(h) it by photoetching technique, performs etching, is completed to P-type non-crystalline silicon layer and N-type amorphous silicon according to preset spacer width
The preparation of dielectric isolation layer between layer；
(i) on the basis of above-mentioned solar cell back surface, using phosphine as impurity gas, hydrogen as carrier gas and diluent gas,
Silane is reaction gas, by masking process by PECVD deposited n-type amorphous silicon layer as back surface field；
(j) it is deposited using masking process by PVD or CVD method in the P-type non-crystalline silicon layer and N-type non-crystalline silicon layer surface transparent
Conductive oxide film, as conductive layer；
(k) deposit metal electrodes, completion in such a way that masking process is by PVD on the transparent conductive oxide film
The preparation of the solar cell of invention.
2. a kind of interdigitation back contacts heterojunction solar battery preparation method according to claim 1, which is characterized in that step
Suddenly (a) specific steps are successively are as follows: RCA standard cleaning removes particle and organic matter of silicon chip surface etc.；It is placed into after Wafer Cleaning
In 20% NaOH aqueous slkali, surface damage layer caused by slice process is removed；Immerse NaOH, Na2SiO3, IPA mixed solution
Middle carry out making herbs into wool；Pickling is carried out to the silicon chip surface after making herbs into wool using HCL, the lye of silicon chip surface is remained in neutralization, is gone
Except the remaining metal impurities of silicon chip surface；Using HF solution cleaning silicon chip, to remove the silicon dioxide layer and and silicon of silicon chip surface
The dangling bonds on piece surface form Si-H and are passivated key, and last nitrogen is dried for standby.
3. a kind of interdigitation back contacts heterojunction solar battery preparation method according to claim 1, which is characterized in that adopt
HBC cell backside structure graph is prepared with the technique that a step photoetching process is combined with mask method.
4. a kind of interdigitation back contacts heterojunction solar battery preparation method according to claim 1, which is characterized in that institute
It states and is dielectrically separated from layer material and is made of nitride, oxide, the one or more of amorphous silicon, the width of dielectric isolation layer is 10-
50μm。
5. a kind of interdigitation back contacts heterojunction solar battery preparation method according to claim 1, which is characterized in that step
Suddenly the available filament CVD of the step of (b) is completed into step (j) using PECVD is realized.
6. a kind of interdigitation back contacts heterojunction solar battery preparation method according to claim 1, it is characterised in that: step
Suddenly (f) and the sequence of step (i) technique can exchange according to the actual situation；Step (b), step (c), step (d) can be in steps
Suddenly probable rear progress before (e), step (f), step (g), step (h), step (i), step (j) or step (k).
7. a kind of interdigitation back contacts heterojunction solar battery preparation method according to claim 1, which is characterized in that step
Suddenly requirement of the design of mask plate needed for (f) based on required P-type non-crystalline silicon layer to pattern is covered needed for step (i)
Requirement of the design of diaphragm plate based on required N-type non-crystalline silicon layer to pattern；Its exposure mask plate material is that metal or quartz etc. are non-
Metal material.
8. a kind of interdigitation back contacts heterojunction solar battery preparation method according to claim 1, which is characterized in that back
Face transparent conductive oxide film is with a thickness of one of 80-150nm, material ITO, AZO, IWO, FTO and GZO film
Or a variety of laminations are constituted, the electrode material is aluminium, silver, copper or metal alloy.
9. a kind of interdigitation back contacts heterojunction solar battery preparation method according to claim 1, which is characterized in that just
Face intrinsic amorphous silicon passivation layer thickness is 1-15nm, and for positive N-type non-crystalline silicon layer front-surface field with a thickness of 1-15nm, the back side is intrinsic non-
Crystal silicon passivation layer thickness be 1-15nm, the back side N-type non-crystalline silicon layer with a thickness of 10-100nm, the back side p-type is non-
Crystal silicon layer with a thickness of 10-100nm.
10. a kind of interdigitation back contacts heterojunction solar battery preparation method according to claim 1, which is characterized in that
For anti-reflection layer with a thickness of 50-200nm, material is silicon nitride film, silicon oxide film either by silicon nitride film and silica
The lamination that film is constituted.
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Effective date of registration: 20231121 Address after: No. 8 Yingbin Avenue, Lianshui County Economic Development Zone, Huai'an City, Jiangsu Province 223400 Patentee after: Huai'an Jietai New Energy Technology Co.,Ltd. Address before: 710048 No. 5 Jinhua South Road, Shaanxi, Xi'an Patentee before: XI'AN University OF TECHNOLOGY |