CN114664954A - Manufacturing method of passivated back contact solar cell - Google Patents
Manufacturing method of passivated back contact solar cell Download PDFInfo
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- CN114664954A CN114664954A CN202210259656.XA CN202210259656A CN114664954A CN 114664954 A CN114664954 A CN 114664954A CN 202210259656 A CN202210259656 A CN 202210259656A CN 114664954 A CN114664954 A CN 114664954A
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- polycrystalline silicon
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 91
- 238000000151 deposition Methods 0.000 claims abstract description 21
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052796 boron Inorganic materials 0.000 claims abstract description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000005641 tunneling Effects 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 4
- 238000010030 laminating Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 12
- 239000005388 borosilicate glass Substances 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000004093 laser heating Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 abstract description 4
- 238000009792 diffusion process Methods 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a manufacturing method of a passivated back contact solar cell, which comprises the following steps: sequentially laminating a tunneling oxide layer and an N-type polycrystalline silicon layer on one side surface of the N-type single crystal silicon substrate; forming a mask layer on the N-type polycrystalline silicon layer, and etching away a preset region of the mask layer and the N-type polycrystalline silicon layer located right below the preset region of the mask layer to form a slot; depositing an intrinsic polycrystalline silicon layer in the slot, wherein the thickness of the intrinsic polycrystalline silicon layer is the same as that of the N-type polycrystalline silicon layer; selectively doping boron in a preset region of the intrinsic polycrystalline silicon layer to form a P-type polycrystalline silicon layer, so that a spacing region formed by the intrinsic polycrystalline silicon layer is arranged between the P-type polycrystalline silicon layer and the N-type polycrystalline silicon layer; and forming contact electrodes on the P-type polycrystalline silicon layer and the N-type polycrystalline silicon layer respectively. The invention solves the problem that the isolation region between the polycrystalline silicon layer and the N-type polycrystalline silicon layer is not easy to form in the manufacturing process of the back contact type solar cell.
Description
Technical Field
The invention relates to the technical field of solar power generation, in particular to a manufacturing method of a passivated back contact type solar cell.
Background
In the field of back contact solar cell technology, a doped polysilicon structure is formed by high temperature diffusion of impurities on intrinsic polysilicon. For example, high temperature phosphorus diffusion on intrinsic polysilicon may form an N-type doped region, or high temperature boron diffusion may form a P-type doped region. But the P-type doped region formed by high-temperature boron diffusion is difficult to remove by acid/alkali solution (the reason is that boron-doped polysilicon is difficult to corrode by acid and alkali). Therefore, if a P-type doped region is formed on the intrinsic polysilicon by high temperature boron diffusion, the excess P-type doped region cannot be removed by a cleaning process, so that an isolation region cannot be formed between the P-type doped region and the N-type doped region.
Disclosure of Invention
In view of the defects in the prior art, the invention provides a method for manufacturing a passivated back contact solar cell, which comprises the following steps:
sequentially laminating a tunneling oxide layer and an N-type polycrystalline silicon layer on one side surface of the N-type monocrystalline silicon substrate;
etching off a preset region of the N-type polycrystalline silicon layer to form a slot;
depositing an intrinsic polycrystalline silicon layer in the groove, wherein the thickness of the intrinsic polycrystalline silicon layer is the same as that of the N-type polycrystalline silicon layer;
selectively doping boron in a preset area of the intrinsic polycrystalline silicon layer to form a P-type polycrystalline silicon layer, so that a spacing area formed by the intrinsic polycrystalline silicon layer is arranged between the P-type polycrystalline silicon layer and the N-type polycrystalline silicon layer;
and respectively forming contact electrodes on the P-type polycrystalline silicon layer and the N-type polycrystalline silicon layer.
Preferably, before depositing and forming the intrinsic polysilicon layer in the open trench, the method comprises: and cleaning the slot.
Preferably, the forming of the P-type polycrystalline silicon layer by selectively boron-doping a predetermined region of the intrinsic polycrystalline silicon layer includes:
carrying out boron deposition on the intrinsic polycrystalline silicon layer to form a borosilicate glass layer;
and carrying out laser heating on the borosilicate glass layer which is positioned right above the preset region of the intrinsic polycrystalline silicon layer so as to selectively carry out boron doping on the preset region of the intrinsic polycrystalline silicon layer.
Preferably, the deposition temperature of the boron deposition is 700-900 ℃, and the deposition time is 5-6 minutes.
Preferably, the thickness of the borosilicate glass layer is 10nm to 60 nm.
Preferably, before forming contact electrodes on the P-type polycrystalline silicon layer and the N-type polycrystalline silicon layer, respectively, the method includes:
and depositing and forming an antireflection layer on the surface of one side of the N-type single crystal silicon substrate, which faces away from the tunneling oxide layer.
The manufacturing method of the passivated back contact type solar cell can form an isolation region between the N-type polycrystalline silicon layer and the P-type polycrystalline silicon layer, so that the back contact type solar cell can be prevented from generating electric leakage.
Drawings
Fig. 1a to 1f are process diagrams of a method for fabricating a passivated back contact solar cell according to an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention are described in detail below with reference to the accompanying drawings. Examples of these preferred embodiments are illustrated in the accompanying drawings. The embodiments of the invention shown in the drawings and described in accordance with the drawings are exemplary only, and the invention is not limited to these embodiments.
It should be noted that, in order to avoid obscuring the present invention with unnecessary details, only the structures and/or processing steps closely related to the solution according to the present invention are shown in the drawings, and other details not so related to the present invention are omitted.
The present embodiment provides the following detailed description in view of the problems of the related art set forth in the background.
The method for manufacturing the passivated back contact solar cell provided by the embodiment comprises the following steps:
in step S1, as shown in fig. 1a, a tunnel oxide layer 2 and an N-type polysilicon layer 3 are sequentially formed on one side of an N-type single crystal silicon substrate 1. Specifically, first, SiO is deposited on one side surface of the N-type single-crystal silicon substrate 12And forming the tunneling oxide layer 2, depositing intrinsic polycrystalline silicon on the tunneling oxide layer 2, and doping phosphorus to the intrinsic polycrystalline silicon to form the N-type polycrystalline silicon layer 3.
Step S2, as shown in fig. 1b and 1c, forming a mask layer 4 on the N-type polysilicon layer 3, and etching away a predetermined region of the mask layer 4 and the mask layer 4And the N-type polycrystalline silicon layer 3 is arranged right below the preset area to form a groove A. Specifically, SiN is deposited on the N-type polycrystalline silicon layer 3x、SiO2、SiONxThe mask layer 4 is formed, then a preset area of the mask layer 4 and the N-type polycrystalline silicon layer 3 located right below the preset area of the mask layer 4 are etched in a laser grooving mode, so that the groove a is formed, and the groove a is cleaned.
Step S3, as shown in fig. 1d, depositing an intrinsic polysilicon layer 5 in the trench a, wherein the thickness of the intrinsic polysilicon layer 5 is the same as the N-type polysilicon layer 3. Specifically, an intrinsic polysilicon layer 5 having the same thickness as the N-type polysilicon layer 3 is deposited in the trench a by using PECVD equipment.
Step S4, as shown in fig. 1e, selectively boron-doping a predetermined region of the intrinsic polycrystalline silicon layer 5 to form a P-type polycrystalline silicon layer 6, so that a spacing region formed by the intrinsic polycrystalline silicon layer 5 is formed between the P-type polycrystalline silicon layer 6 and the N-type polycrystalline silicon layer 3. Specifically, boron deposition is carried out on the intrinsic polycrystalline silicon layer 5 to form a borosilicate glass layer with the thickness of 10 nm-60 nm, the deposition temperature of the boron deposition is 700-900 ℃, the deposition time is 5-6 minutes, and then the borosilicate glass layer positioned right above the preset area of the intrinsic polycrystalline silicon layer 5 is subjected to laser heating, so that the preset area of the intrinsic polycrystalline silicon layer 5 is subjected to selective boron doping.
Step S5, as shown in fig. 1f, forms contact electrodes 7 on the P-type polycrystalline silicon layer 6 and the N-type polycrystalline silicon layer 3, respectively. Specifically, after the mask layer 4 is removed, the contact electrodes 7 are respectively disposed on the P-type polycrystalline silicon layer 6 and the N-type polycrystalline silicon layer 3. When the mask layer 4 is left, the contact electrode 7 may be formed in such a manner that silver paste having a corrosive solvent is printed on the P-type polycrystalline silicon layer 6 and the N-type polycrystalline silicon layer 3, respectively.
Optionally, before the contact electrode 7 is formed, in order to improve the light collection efficiency of the solar cell, an anti-reflection layer is deposited and formed on the surface of the N-type single crystal silicon substrate 1 on the side opposite to the tunneling oxide layer 2.
By adopting the manufacturing method of the passivated back contact type solar cell provided by the embodiment, the isolation region can be formed between the N-type polycrystalline silicon layer and the P-type polycrystalline silicon layer, so that the back contact type solar cell can be prevented from generating electric leakage.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in the process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A method of fabricating a passivated back contact solar cell, comprising:
sequentially laminating a tunneling oxide layer and an N-type polycrystalline silicon layer on one side surface of the N-type single crystal silicon substrate;
etching off a preset region of the N-type polycrystalline silicon layer to form a slot;
depositing an intrinsic polycrystalline silicon layer in the groove, wherein the thickness of the intrinsic polycrystalline silicon layer is the same as that of the N-type polycrystalline silicon layer;
selectively doping boron in a preset area of the intrinsic polycrystalline silicon layer to form a P-type polycrystalline silicon layer, so that a spacing area formed by the intrinsic polycrystalline silicon layer is arranged between the P-type polycrystalline silicon layer and the N-type polycrystalline silicon layer;
and respectively forming contact electrodes on the P-type polycrystalline silicon layer and the N-type polycrystalline silicon layer.
2. The method of claim 1, wherein depositing an intrinsic polysilicon layer in the trench comprises: and cleaning the slot.
3. The method of claim 1, wherein selectively boron doping the predetermined region of the intrinsic polysilicon layer to form a P-type polysilicon layer comprises:
carrying out boron deposition on the intrinsic polycrystalline silicon layer to form a borosilicate glass layer;
and carrying out laser heating on the borosilicate glass layer positioned right above the preset region of the intrinsic polycrystalline silicon layer so as to selectively carry out boron doping on the preset region of the intrinsic polycrystalline silicon layer.
4. The method according to claim 3, wherein the deposition temperature of the boron deposition is 700 ℃ to 900 ℃ and the deposition time is 5 minutes to 6 minutes.
5. The method according to claim 4, wherein the thickness of the borosilicate glass layer is 10nm to 60 nm.
6. The method of claim 1, wherein before forming contact electrodes on the P-type polysilicon layer and the N-type polysilicon layer respectively, the method comprises:
and depositing and forming an antireflection layer on the surface of one side of the N-type single crystal silicon substrate, which faces away from the tunneling oxide layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210259656.XA CN114664954A (en) | 2022-03-16 | 2022-03-16 | Manufacturing method of passivated back contact solar cell |
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| CN202210259656.XA CN114664954A (en) | 2022-03-16 | 2022-03-16 | Manufacturing method of passivated back contact solar cell |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637892A (en) * | 2024-01-26 | 2024-03-01 | 隆基绿能科技股份有限公司 | Back contact solar cell and photovoltaic module |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876501A (en) * | 2017-03-10 | 2017-06-20 | 泰州乐叶光伏科技有限公司 | One kind passivation contact all back-contact electrodes solar battery structure and preparation method thereof |
| CN109216509A (en) * | 2018-08-06 | 2019-01-15 | 西安理工大学 | A kind of interdigitation back contacts heterojunction solar battery preparation method |
| CN113345970A (en) * | 2021-06-04 | 2021-09-03 | 浙江爱旭太阳能科技有限公司 | P-type back contact type crystalline silicon solar cell, preparation method and cell assembly |
| CN113871494A (en) * | 2020-06-30 | 2021-12-31 | 泰州隆基乐叶光伏科技有限公司 | Solar cell and manufacturing method thereof |
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- 2022-03-16 CN CN202210259656.XA patent/CN114664954A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106876501A (en) * | 2017-03-10 | 2017-06-20 | 泰州乐叶光伏科技有限公司 | One kind passivation contact all back-contact electrodes solar battery structure and preparation method thereof |
| CN109216509A (en) * | 2018-08-06 | 2019-01-15 | 西安理工大学 | A kind of interdigitation back contacts heterojunction solar battery preparation method |
| CN113871494A (en) * | 2020-06-30 | 2021-12-31 | 泰州隆基乐叶光伏科技有限公司 | Solar cell and manufacturing method thereof |
| CN113345970A (en) * | 2021-06-04 | 2021-09-03 | 浙江爱旭太阳能科技有限公司 | P-type back contact type crystalline silicon solar cell, preparation method and cell assembly |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117637892A (en) * | 2024-01-26 | 2024-03-01 | 隆基绿能科技股份有限公司 | Back contact solar cell and photovoltaic module |
| CN117637892B (en) * | 2024-01-26 | 2024-04-30 | 隆基绿能科技股份有限公司 | Back contact solar cell and photovoltaic module |
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