CN115000194A - Simple low-cost P-type crystalline silicon IBC solar cell and preparation method thereof - Google Patents

Simple low-cost P-type crystalline silicon IBC solar cell and preparation method thereof Download PDF

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CN115000194A
CN115000194A CN202210578871.6A CN202210578871A CN115000194A CN 115000194 A CN115000194 A CN 115000194A CN 202210578871 A CN202210578871 A CN 202210578871A CN 115000194 A CN115000194 A CN 115000194A
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crystalline silicon
silicon substrate
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amorphous silicon
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欧文凯
李含朋
向亮睿
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Pule New Energy Technology Taixing Co ltd
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Pule New Energy Technology Xuzhou Co ltd
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Abstract

The invention relates to a simple low-cost P-type crystalline silicon IBC solar cell and a preparation method thereof, wherein the P-type crystalline silicon IBC solar cell comprises a crystalline silicon substrate; the front surface of the crystalline silicon substrate is sequentially provided with a front passivation layer and a front antireflection layer from inside to outside; the back surface of the crystalline silicon substrate is provided with p + regions and n + regions which are alternately arranged; the p + region is provided with a p + local surface field, a back passivation layer, a back antireflection layer and an aluminum electrode in sequence from inside to outside on the back surface of the crystalline silicon substrate; the n + region is sequentially provided with a tunneling oxide layer, an n + doped polycrystalline silicon layer, a back passivation layer, a back antireflection layer and a silver electrode from inside to outside on the back surface of the crystalline silicon substrate; the invention does not need boron diffusion technology, forms p + local surface field by high-temperature propulsion of Al element, does not need mask and mask removing technology, and can be perfectly compatible with perc and topcon technology; meanwhile, the p + region in the metallization is an aluminum electrode, so that the silver consumption can be reduced, the production cost is greatly reduced, and the method is the direction of industrial development of the modern high-efficiency low-cost solar cell.

Description

Simple low-cost P-type crystalline silicon IBC solar cell and preparation method thereof
Technical Field
The invention relates to the technical field of solar cells, in particular to a simple low-cost P-type crystalline silicon IBC solar cell and a preparation method thereof.
Background
Energy and environment are two major conditions for human survival and development, and energy shortage, environmental pollution and ecological deterioration become a major problem facing all countries. The development of new energy and renewable clean energy and the full development and utilization of solar energy are the energy strategic decisions of the sustainable development of governments in all countries in the world.
The modern industrial production of the solar cell is developed towards high efficiency and low cost, and the IBC cell is characterized in that the front side of the cell does not have electrodes, positive and negative electrode metal grid lines are arranged in a finger-like and crossed manner and the back side of the cell, so that the IBC cell has higher short-circuit current, can effectively reduce the temperature coefficient of the cell and has great development potential. However, the existing IBC cell manufacturing technology is complicated in process, multiple masks need to be added, removed, and at least one step of high-temperature diffusion needs to be performed in the manufacturing process, and the manufacturing cost is high.
Therefore, there is a need to provide a new technical solution to overcome the above-mentioned drawbacks.
Disclosure of Invention
The invention aims to provide a simple and low-cost P-type crystalline silicon IBC solar cell capable of effectively solving the technical problems and a preparation method thereof.
In order to achieve the purpose of the invention, the following technical scheme is adopted:
a simple low-cost P-type crystalline silicon IBC solar cell comprises a crystalline silicon substrate; the front surface of the crystalline silicon substrate is sequentially provided with a front passivation layer and a front antireflection layer from inside to outside; the back surface of the crystalline silicon substrate is provided with p + regions and n + regions which are alternately arranged; the p + region is provided with a p + local surface field, a back passivation layer, a back antireflection layer and an aluminum electrode in sequence from inside to outside on the back surface of the crystalline silicon substrate; the n + region is sequentially provided with a tunneling oxide layer, an n + doped polycrystalline silicon layer, a back passivation layer, a back antireflection layer and a silver electrode from inside to outside on the back surface of the crystalline silicon substrate.
Based on the P-type crystalline silicon IBC solar cell, the invention also provides a method for preparing the cell, which comprises the following steps:
(1) growing a tunneling oxide layer and an amorphous silicon layer on the back of the polished crystalline silicon substrate;
(2) manufacturing an n + doped polycrystalline silicon layer on the amorphous silicon layer obtained in the step (1);
(3) cleaning with HF/HNO3 and KOH, removing PSG on the surface and polishing the back;
(4) removing the tunneling oxide layer and the n + doped polycrystalline silicon layer on the p + region position by using laser;
(5) forming a texturing surface extinction on the front side of the crystalline silicon substrate;
(6) forming a front passivation layer on the suede surface obtained in the step (5);
(7) forming an antireflection layer on the front passivation layer obtained in the step (6);
(8) forming a back passivation layer on the back of the crystalline silicon substrate;
(9) forming an antireflection layer on the back passivation layer obtained in the step (8);
(10) removing the back passivation layer and the antireflection layer of the aluminum electrode area of the p + area by using laser, and reserving an aluminum electrode area;
(11) forming a p + local surface field and an aluminum electrode on the reserved aluminum electrode area obtained in the step (10);
(12) a silver electrode is formed on the n + region.
Preferably, the amorphous silicon layer in the step (1) is a hydrogenated amorphous silicon layer, and the thickness of the hydrogenated amorphous silicon layer is 60-150 nm; the thickness of the tunneling oxide layer is 0.5-1.6 nm.
Preferably, the n + doped polysilicon layer in the step (2) is prepared by performing multi-step variable-temperature phosphorus diffusion on the hydrogenated amorphous silicon layer.
Preferably, the multi-step temperature-varying advanced phosphorus diffusion adopts a three-step diffusion process: the temperature for depositing the phosphorosilicate glass in the first step is maintained at 760 ℃, the advancing temperature in the second step is maintained at 820 ℃, and the temperature for depositing the phosphorosilicate glass in the third step is maintained at 785 ℃.
Preferably, the amorphous silicon layer in the step (1) is an n + doped amorphous silicon layer, and the thickness of the n + doped amorphous silicon layer is 60-150 nm; the thickness of the tunneling oxide layer is 1.2-3 nm.
Preferably, the n + doped polycrystalline silicon layer in the step (2) is prepared by performing high-temperature annealing treatment on the n + doped amorphous silicon layer, and the high-temperature annealing temperature is maintained at 850-1000 ℃.
Preferably, in the step (7), the front antireflection layer is a superposed film of SiNx and SiOxNy, and the thickness is 70-80 nm.
Preferably, the thickness of the SiNx film is 50-60 nm; the thickness of the SiOxNy film is 15 to 25 nm.
Preferably, in the step (9), the back antireflection layer is SiOxNy, and has a thickness of 80 to 90 nm.
Compared with the prior art, the invention has the following beneficial effects:
according to the P-type crystalline silicon IBC solar cell, a boron diffusion process is not required to be added in the manufacturing process, a multi-step variable temperature propulsion phosphorus diffusion process is adopted, the Al element is propelled at high temperature, so that Al and Si react, part of Al is doped into a Si body to form a P + local surface field, a mask and a mask removing process are not required, the technology is perfectly compatible with perc and topcon technologies, the manufacturing process is simplified while the performance of the cell is ensured, and the production cost of the P-type crystalline silicon IBC solar cell is reduced; in addition, the P + region in the metallization of the P-type crystalline silicon IBC solar cell is an aluminum electrode, so that the silver consumption is reduced, and the production cost is further reduced.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly introduced below.
FIG. 1 is a structural diagram of a solar cell of the present invention manufactured by the method of example 1;
fig. 2 is a structural view of a solar cell of the present invention manufactured by the method of example 2.
Numerical description in the figures: 100. a crystalline silicon substrate; 11. a front side antireflection layer; 12. a front passivation layer; 21. a p + local surface field; 22. tunneling through the oxide layer; 23. an n + doped polycrystalline layer; 23-1, a microporous layer; 24. a back passivation layer; 25. a back side antireflection layer; 26. an aluminum electrode; 27. a silver electrode; 200. a p + region; 300. and an n + region.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the following will clearly and completely describe the technical solutions in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments.
The following will make a clear and complete description of a simple and low-cost P-type crystalline silicon IBC solar cell and a manufacturing method thereof in the present invention with reference to the accompanying drawings.
As shown in fig. 1 and 2, the simple low-cost P-type crystalline silicon IBC solar cell and the manufacturing method thereof provided by the invention include a crystalline silicon substrate 100, a front passivation layer 12 and a front antireflection layer 11 are sequentially disposed on a front surface of the crystalline silicon substrate 100 from inside to outside, a P + region 200 and an n + region 300 which are alternately arranged are sequentially disposed on a back surface of the crystalline silicon substrate 100, a P + local surface field 21, a back passivation layer 24, a back antireflection layer 25 and an aluminum electrode 26 are sequentially disposed on the back surface of the crystalline silicon substrate 100 from inside to outside in the P + region 200, and a tunneling oxide layer 22, an n + doped polysilicon layer 23, a back passivation layer 24, a back antireflection layer 25 and a silver electrode 27 are sequentially disposed on the back surface of the crystalline silicon substrate 100 from inside to outside in the n + region 300.
Example 1
The invention provides a simple low-cost P-type crystalline silicon IBC solar cell, which comprises the following steps:
(1) growing a tunneling oxide layer 22 and an intrinsic hydrogenated amorphous silicon layer on the back surface of the polished P-type monocrystalline silicon 100, wherein the thickness of the tunneling oxide layer 22 is 1.3nm, the thickness of the intrinsic hydrogenated amorphous silicon layer is 120nm, growing the tunneling oxide layer 22 by LPCVD, keeping the pressure at 15-100Kpa and the temperature at 550-700 ℃, and introducing oxygen to prepare the tunneling oxide 22. Growing an intrinsic amorphous silicon layer on the outer surface of the tunneling silicon oxide 22, keeping the pressure at 30-80pa and the temperature at 550-600 ℃, and introducing silane to prepare the intrinsic amorphous silicon layer; the intrinsic hydrogenated amorphous silicon layer 22 may be formed by any one of LPCVD, PECVD, ALD, PVD, or the like.
(2) Performing high-temperature phosphorus diffusion on the hydrogenated amorphous silicon layer obtained in the step (1) to obtain an n + doped polycrystalline silicon layer 23, and performing multi-step temperature-changing promotion phosphorus diffusion by adopting a three-step diffusion process, wherein the temperature of the phosphorus-silicon glass deposited in the first step is maintained at 760 ℃, the promotion temperature in the second step is maintained at 820 ℃, the temperature of the phosphorus-silicon glass deposited in the third step is maintained at 785 ℃, so that high surface doping concentration can be obtained, good contact between metal and silicon is facilitated, the sheet resistance value after multi-step temperature-changing promotion phosphorus diffusion is controlled at 70 omega, and the surface phosphorus doping concentration is 9.0 multiplied by 10 19 cm -3 。
(3) By means of HF/HNO 3 And KOH, removing PSG on the surface and polishing the back surface.
(4) And removing the tunneling oxide layer 22 and the n + doped polysilicon layer 23 on the p + region 200 by using laser, wherein the adopted laser power is 35W, and the laser wavelength is 532 nm.
(5) Forming a matte surface on the front surface of the crystalline silicon substrate 100, wherein the matte surface is prepared by an alkaline matte method, a mixed solution of hydrogen peroxide, deionized water, an additive and sodium hydroxide is used as a solution, the mass concentration of the alkaline matte sodium hydroxide or potassium hydroxide is 2.5%, the temperature is controlled at 82 ℃, and a pyramid matte surface with the reflectivity less than or equal to 10% is prepared.
(6) Preparing a front passivation layer 12 (Al) on the suede surface obtained in the step (5) by adopting an ALD (atomic layer deposition) mode 2 O 3 ) The thickness is controlled to be 10 nm; the front passivation layer can also be prepared by any one of PECVD or PVD methods.
(7) The front passivation layer 12 (Al) obtained in step (6) 2 O 3 ) The front antireflection layer is prepared in a PECVD mode, the front antireflection layer is a SiNx and SiOxNy superposed film, in some preferred thickness selection modes, the SiNx film is 50-60 nm, the SiOxNy film is 15-25 nm, the total thickness of the superposed film is controlled to be 70-80 nm, the SiNx film is made into two layers with different refractive indexes, ammonia gas and silane are introduced, the deposition temperature is about 450 ℃, and the flow ratio of the ammonia gas to the silane of the high-refractive-index film layer is (4-5): 1, flow rate of ammonia gas and silane in low-folding film layerThe ratio is (8-10): 1, introducing laughing gas, ammonia gas and silane into the SiOxNy film to realize low-temperature deposition, wherein the deposition temperature is about 450 ℃, and the flow ratio of the laughing gas, the ammonia gas and the silane is 4:8: 1.
(8) On the back side of the P-type single crystal silicon 100, a back passivation layer 24 (Al) is prepared by ALD 2 O 3 ) The thickness is controlled to be 10nm, and the preparation can be carried out together with the step (6), so that one step is reduced; the back passivation layer 24 may also be prepared by either PECVD or PVD methods.
(9) The back passivation layer 24 (Al) obtained in the step (8) 2 O 3 ) The front antireflection layer 25(SiOxNy) is prepared in a PECVD mode, the thickness is controlled to be 80-90 nm, laughing gas, ammonia gas and silane are introduced in the preparation process to realize low-temperature deposition, the deposition temperature is about 450 ℃, and the flow ratio of the laughing gas, the ammonia gas and the silane is 4:8: 1.
(10) And removing the back passivation layer 24 and the antireflection layer 25 in the p + region 200 aluminum electrode 26 region by using laser, reserving an aluminum electrode region, and adopting laser power of 35W and laser wavelength of 532 nm.
(11) Forming a p + local surface field 21 and an aluminum electrode 26 in the reserved aluminum electrode 26 area obtained in the step (10) through screen printing and high-concentration aluminum paste sintering technologies;
(12) forming a silver electrode 27 on the n + region 300 by screen printing and sintering silver paste technology; the electrode and the silver electrode can also adopt any one of electroplating, chemical plating, laser transfer printing and PVD method, and the p + local surface field is formed by doping high-concentration aluminum into a silicon substrate.
Example 2
The invention provides a simple low-cost P-type crystalline silicon IBC solar cell, which comprises the following steps:
(1) growing a tunneling oxide layer 22 and an n + amorphous silicon layer on the back surface of the polished P-type monocrystalline silicon 100, wherein the thickness of the tunneling oxide layer 22 is 2.1nm, the thickness of the n + amorphous silicon layer is 120nm, growing the tunneling oxide layer by LPCVD, keeping the pressure at 15-100Kpa, the temperature at 550-700 ℃, and introducing oxygen to prepare the tunneling oxide 22. Growing a phosphorus-doped n + amorphous silicon layer on the outer surface of the tunneling silicon oxide 22 in an in-situ doping mode, and introducing silane and phosphane mixed gas to prepare an n + doped amorphous silicon layer 23; the n + doped amorphous silicon layer 23 may also be prepared using any one of ion implantation, PECVD, ALD or PVD.
(2) Performing high-temperature annealing on the n + amorphous silicon layer obtained in the step (1), maintaining the temperature at 850-1000 ℃, reducing the thickness of a back tunneling oxide layer, locally forming a microporous layer 23-1, realizing current conduction through the microporous layer 23-1 (leading) and tunneling together, converting the n + amorphous silicon layer into an n + polycrystalline silicon layer 23, and controlling the square resistance value after annealing at 50-100 omega;
(3) by means of HF/HNO 3 Cleaning with KOH, removing PSG on the surface and polishing the back;
(4) removing the tunneling oxide layer 22 and the n + doped polycrystalline silicon layer 23 on the p + region 200 by using laser, wherein the adopted laser power is 35W, and the laser wavelength is 532 nm;
(5) forming a texture surface extinction on the front side of the crystalline silicon substrate 100, wherein the texture surface is prepared by an alkali texture method, a mixed solution of hydrogen peroxide, deionized water, an additive and sodium hydroxide is used as a solution, the mass concentration of the alkali texture sodium hydroxide or potassium hydroxide is 2.5%, the temperature is controlled at 82 ℃, and a pyramid texture surface with the reflectivity of less than or equal to 10% is prepared;
(6) preparing a front passivation layer 12 (Al) on the suede surface obtained in the step (5) by adopting an ALD (atomic layer deposition) mode 2 O 3 ) The thickness is controlled to be 20 nm; the front passivation layer can also be prepared by any one of PECVD or PVD methods.
(7) Preparing a front antireflection layer on the front passivation layer 12(Al2O3) obtained in the step (6) by adopting a PECVD (plasma enhanced chemical vapor deposition) mode, wherein the front antireflection layer is a SiNx and SiOxNy superposed film, in some preferable thickness selection modes, the SiNx film is 50-60 nm, the SiOxNy film is 15-25 nm, the total thickness of the superposed film is controlled to be 70-80 nm, the SiNx film is made into two layers with different refractive indexes, ammonia gas and silane are introduced, the deposition temperature is about 450 ℃, and the flow ratio of the ammonia gas to the silane of the high-refraction film layer is (4-5): 1, the flow ratio of ammonia gas to silane of the low-refraction film layer is (8-10): 1, introducing laughing gas, ammonia gas and silane into the SiOxNy film to realize low-temperature deposition, wherein the deposition temperature is about 450 ℃, and the flow ratio of the laughing gas, the ammonia gas and the silane is 4:8: 1;
(8) on the back side of the P-type single crystal silicon 100Backside passivation layer 24 (Al) by ALD 2 O 3 ) The thickness is controlled to be 20nm, and the preparation can be carried out together with the step (6), so that one step is reduced; the back passivation layer 24 may also be prepared by either PECVD or PVD methods.
(9) And (3) preparing the front antireflection layer 25(SiOxNy) on the back passivation layer 24(Al2O3) obtained in the step (8) in a PECVD (plasma enhanced chemical vapor deposition) mode, wherein the thickness is controlled to be 80-90 nm, laughing gas, ammonia gas and silane are introduced in the preparation process to realize low-temperature deposition, the deposition temperature is about 450 ℃, and the flow ratio of the laughing gas to the ammonia gas to the silane is 4:8: 1.
(10) And removing the back passivation layer 24 and the antireflection layer 25 in the p + region 200 aluminum electrode 26 region by using laser, reserving an aluminum electrode region, and adopting laser power of 35W and laser wavelength of 532 nm.
(11) And (5) forming the p + local surface field 21 and the aluminum electrode 26 in the reserved aluminum electrode 26 area obtained in the step (10) by screen printing and sintering high-concentration aluminum paste technology.
(12) Forming a silver electrode 27 on the n + region 300 by screen printing and sintering silver paste technology; the electrode and the silver electrode can also adopt any one of electroplating, chemical plating, laser transfer printing and PVD method, and the p + local surface field is formed by doping high-concentration aluminum into a silicon substrate.
The performance of the P-type crystalline silicon IBC solar cell manufactured by the method of example 1-2 and the P-type crystalline silicon IBC solar cell manufactured by the Perc process and the Topcon process in the prior art are compared, and the results are shown in table 1, where Voc represents the open-circuit voltage, Jsc represents the short-circuit current density, FF represents the fill factor, and EFF represents the cell conversion efficiency.
TABLE 1
Figure BDA0003663070900000081
As can be seen from the test data comparing the cells of examples 1-2 with the perc cell and the topcon cell, the open circuit voltage of the cell of the present invention was higher by 30mV than that of the perc cell and higher by 15mV than that of the topcon cell, and the short circuit current density of the cell of the present invention was higher by perc cell with high short circuit current density of 43mA/cm 2 32.8mA/cm higher than the short-circuit current density of a topcon battery 2 It is shown that the passivation contact structure in this embodiment can effectively improve recombination, thereby increasing open-circuit voltage, and the front surface is not shielded by electrodes, thereby increasing short-circuit current, and making the simple P-type crystalline silicon IBC cell have higher conversion efficiency.
Meanwhile, compared with the traditional preparation method, the method does not need a boron diffusion process, forms a p + local surface field by the high-temperature propulsion of Al element, does not need a mask and a mask removing process, can be perfectly compatible with perc and topcon technologies, can reduce the silver consumption because the p + region is an aluminum electrode in metallization, and greatly reduces the production cost.
Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention.

Claims (10)

1. The utility model provides a simple and easy low-cost P type crystal silicon IBC solar cell which characterized in that: comprises a crystalline silicon substrate; the front surface of the crystalline silicon substrate is sequentially provided with a front passivation layer and a front antireflection layer from inside to outside; the back surface of the crystalline silicon substrate is provided with p + regions and n + regions which are alternately arranged; the p + region is provided with a p + local surface field, a back passivation layer, a back antireflection layer and an aluminum electrode in sequence from inside to outside on the back surface of the crystalline silicon substrate; the n + region is sequentially provided with a tunneling oxide layer, an n + doped polycrystalline silicon layer, a back passivation layer, a back antireflection layer and a silver electrode from inside to outside on the back surface of the crystalline silicon substrate.
2. A method of fabricating the P-type crystalline silicon IBC solar cell of claim 1, wherein: the method comprises the following steps:
(1) growing a tunneling oxide layer and an amorphous silicon layer on the back of the polished crystalline silicon substrate;
(2) manufacturing an n + doped polycrystalline silicon layer on the amorphous silicon layer obtained in the step (1);
(3) by means of HF/HNO 3 Cleaning with KOH, removing PSG on the surface and polishing the back;
(4) removing the tunneling oxide layer and the n + doped polysilicon layer on the p + region position by using laser;
(5) forming a texturing surface extinction on the front side of the crystalline silicon substrate;
(6) forming a front passivation layer on the suede surface obtained in the step (5);
(7) forming an antireflection layer on the front passivation layer obtained in the step (6);
(8) forming a back passivation layer on the back of the crystalline silicon substrate;
(9) forming an antireflection layer on the back passivation layer obtained in the step (8);
(10) removing the back passivation layer and the antireflection layer of the aluminum electrode area of the p + area by using laser, and reserving an aluminum electrode area;
(11) forming a p + local surface field and an aluminum electrode on the reserved aluminum electrode area obtained in the step (10);
(12) a silver electrode is formed on the n + region.
3. The method of claim 2, wherein: the amorphous silicon layer in the step (1) is a hydrogenated amorphous silicon layer, and the thickness of the hydrogenated amorphous silicon layer is 60-150 nm; the thickness of the tunneling oxide layer is 0.5-1.6 nm.
4. The method of claim 3, wherein: the n + doped polycrystalline silicon layer in the step (2) is prepared by carrying out multi-step variable temperature propelling phosphorus diffusion on the hydrogenated amorphous silicon layer.
5. The method of claim 4, wherein: the multi-step variable temperature propulsion phosphorus diffusion adopts a three-step diffusion process: the temperature for depositing the phosphorosilicate glass in the first step is maintained at 760 ℃, the advancing temperature in the second step is maintained at 820 ℃, and the temperature for depositing the phosphorosilicate glass in the third step is maintained at 785 ℃.
6. The method of claim 2, wherein: the amorphous silicon layer in the step (1) is an n + doped amorphous silicon layer, and the thickness of the n + doped amorphous silicon layer is 60-150 nm; the thickness of the tunneling oxide layer is 1.2-3 nm.
7. The method of claim 6, wherein: the n + doped polycrystalline silicon layer in the step (2) is prepared by performing high-temperature annealing treatment on the n + doped amorphous silicon layer, and the high-temperature annealing temperature is maintained at 850-1000 ℃.
8. The method of any one of claims 2, 4 or 7, wherein: in the step (7), the front antireflection layer is a superposed film of SiNx and SiOxNy, and the thickness of the front antireflection layer is 70-80 nm.
9. The method of claim 8, wherein: the thickness of the SiNx film is 50-60 nm; the thickness of the SiOxNy film is 15 to 25 nm.
10. The method of any one of claims 2, 4 or 7, wherein: in the step (9), the back antireflection layer is SiOxNy with a thickness of 80-90 nm.
CN202210578871.6A 2022-05-26 2022-05-26 Simple low-cost P-type crystalline silicon IBC solar cell and preparation method thereof Pending CN115000194A (en)

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