CN103996747A - Preparing method for crystalline silicon solar battery taking back single-layer aluminum oxide as passivating film - Google Patents
Preparing method for crystalline silicon solar battery taking back single-layer aluminum oxide as passivating film Download PDFInfo
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- CN103996747A CN103996747A CN201410220006.XA CN201410220006A CN103996747A CN 103996747 A CN103996747 A CN 103996747A CN 201410220006 A CN201410220006 A CN 201410220006A CN 103996747 A CN103996747 A CN 103996747A
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- 238000000034 method Methods 0.000 title claims abstract description 36
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 239000002356 single layer Substances 0.000 title claims abstract description 20
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 84
- 239000010703 silicon Substances 0.000 claims abstract description 84
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 82
- 239000011521 glass Substances 0.000 claims abstract description 48
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 47
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 47
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000005245 sintering Methods 0.000 claims abstract description 19
- 238000004140 cleaning Methods 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims abstract description 12
- 238000012360 testing method Methods 0.000 claims abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 7
- 238000005498 polishing Methods 0.000 claims abstract description 7
- 239000004332 silver Substances 0.000 claims abstract description 7
- 229910052709 silver Inorganic materials 0.000 claims abstract description 7
- 239000004411 aluminium Substances 0.000 claims description 46
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 40
- 229910052698 phosphorus Inorganic materials 0.000 claims description 30
- 238000009792 diffusion process Methods 0.000 claims description 26
- 239000011574 phosphorus Substances 0.000 claims description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 24
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 22
- 239000013078 crystal Substances 0.000 claims description 20
- 238000002360 preparation method Methods 0.000 claims description 19
- 238000003475 lamination Methods 0.000 claims description 12
- 235000008216 herbs Nutrition 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 210000002268 wool Anatomy 0.000 claims description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 6
- 238000000637 aluminium metallisation Methods 0.000 claims description 6
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 claims description 6
- 238000000231 atomic layer deposition Methods 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000012535 impurity Substances 0.000 claims description 6
- 238000000608 laser ablation Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 11
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 description 55
- 238000005240 physical vapour deposition Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 238000011056 performance test Methods 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a preparing method for a crystalline silicon solar battery taking back single-layer aluminum oxide as a passivating film. The method comprises the steps that damage to a silicon chip is removed, texturing and cleaning are carried out, phosphor diffuses, phosphor silicon glass on the back is removed, back polishing is achieved, the phosphor silicon glass is removed and cleaned, an aluminum oxide film on the back grows, a silicon nitride antireflection film on the front grows, laser is used for film opening, an electrode and an aluminum layer of non-corroding aluminum oxide are printed on the back, a silver grid line is printed on the front, and sintering and testing are carried out. The preparing method is simple in step, easy to operate, and capable of efficiently preparing the crystalline silicon solar battery in a mass mode, and has the advantages that on the basis of commercialized industrial equipment, conventional battery production equipment possessed by an enterprise production line at present is fully utilized, the equipment investment is greatly reduced, and the manufacturing cost of per watt of the battery is not increased.
Description
Technical field
The invention belongs to crystal silicon solar energy battery and manufacture field, relate to a kind of preparation method who carries on the back annealing point contact crystalline silicon solar cell comprising, particularly the mono-layer oxidized aluminium in a kind of back side is as the preparation method of the back of the body annealing point contact crystalline silicon solar cell comprising of passivating film.
Background technology
Under the background becoming increasingly conspicuous in problems such as energy shortage, shortage of resources and environmental pollutions, utilize natural resources solar power generation, be taken as the countermeasure that solves global warming and the exhausted problem of fossil fuel, be subject to the favor of countries in the world.Yet higher production cost is restricting its range of application, and along with government subsidy is significantly cut down, reduce the production cost of cell piece, improve generating efficiency and become the extremely urgent problem of each manufacturer.
Modernization solar cell industryization is produced towards high efficiency, low cost future development, and back of the body passivation combines as the representative of high efficiency, low cost developing direction with metallized area local heavy doping technology, it is advantageous that:
(1) excellent back reflector: because the existence of cell backside deielectric-coating makes interior back reflection be increased to 92-95% from the full aluminium back surface field 65% of routine.The absorption of the longwave optical increasing on the one hand, especially provides technical assurance to the trend of following Thin film cell on the other hand;
(2) the superior passivating back technology of dielectric film: due to the good passivation of back side deielectric-coating, the back side recombination rate in dielectric film region is reduced to 10-50cm/s.
The Industrial-Type of main flow back of the body passivation cell, mainly adopts aluminium oxide/diaphragm bilayer film as passivating back structure at present, prevents the erosion of back side aluminium paste to aluminum oxide film.Diaphragm adopts silicon nitride conventionally, and the cost of thin-film technique is very high, many step thin film depositions, and equipment investment and production cost all can significantly increase.
Summary of the invention
goal of the invention:the object of the invention is to for the deficiency in currently available technology, propose the mono-layer oxidized aluminium in a kind of back side as the crystal silicon solar energy battery preparation method of passivating film.
technical scheme:for achieving the above object, the present invention has taked following technical scheme:
The mono-layer oxidized aluminium in the back side, as a crystal silicon solar energy battery preparation method for passivating film, comprises the following steps:
(1) silicon chip goes also making herbs into wool of damage, cleaning: select p-type silicon chip as silicon substrate, the p-type silicon chip of selecting is gone under alkali lye, to carry out surperficial matte after damage, then under acid condition, carry out chemical cleaning, remove surface impurity;
(2) phosphorus diffusion: phosphorus is carried out in the front of silicon chip and diffuse to form N-shaped layer, the phosphorosilicate glass of diffusion self-assembling formation, as the mask of battery front side, is realized the object that emitter junction and polishing are removed in the back side;
(3) back side phosphorosilicate glass is removed, and realizes polished backside, removes phosphorosilicate glass and cleans;
(4) at the back side of silicon chip aluminum oxide film, grow;
(5) at the front of silicon chip silicon nitride antireflection film, grow;
(6) laser open film: at the back of the body surface of silicon chip laser ablation aluminum oxide film;
(7) back up electrode and do not corrode the aluminium lamination of aluminium oxide, positive printed silver grid line;
(8) sintering, test.
Its resistivity of p-type silicon chip of selecting in described step 1 is 0.5-6 ohmcm, the making herbs into wool of silicon chip, cleaning are specially: the NaOH that is 0.5-2% with mass fraction or potassium hydroxide solution carry out chemical corrosion to P type silicon chip surface at 75-85 ℃, prepare the matte of Pyramid, with the hydrofluoric acid that mass fraction is 0.5-30%, clean subsequently.
In described step 2, phosphorus diffusion adopts the method for tubular type phosphorus diffusion, specifically in diffusion furnace at the temperature of 600-900 ℃, adopt POCl
3phosphorus is carried out in the front of silicon chip and diffuse to form N-shaped layer, making P type crystalline silicon sheet resistance is 20-150ohm/sq.
Back side phosphorosilicate glass in described step 3 is removed, and realize polished backside, the method of removing phosphorosilicate glass and cleaning, to adopt online roller type equipment, phosphorosilicate glass is removed at the back side, realize polished backside, then remove front phosphorosilicate glass, then adopting mass fraction is the hydrofluoric acid solution cleaning of 0.5-30%.
The thickness of the aluminum oxide film in described step 4 is 1-100nm.
The method grown silicon nitride antireflection film that adopts PECVD, ALD or APCVD in described step 5, wherein the thickness of silicon nitride anti-reflecting film is 50-120nm.
The order of described step 4 and step 5 can be put upside down.
Laser open film in described step 6 is to adopt the mode of linear array to carry out etching oxidation aluminium film, and the live width of linear array is 5-150 um, and spacing is 200 um-5mm.
In described step 7, adopt the method for aluminium paste silk screen printing or the method for PVD AM aluminum metallization to print electrode and do not corrode the aluminium lamination of aluminium oxide.
beneficial effect:adopt the present invention of technique scheme to have the following advantages:
Particularly, compared with prior art, the technical scheme that the present invention takes has following outstanding advantage:
1, simple, the easy operating of step of the present invention, a kind of preparation method that can the efficient crystal silicon solar batteries of volume production, its main feature is on business-like industrial equipment foundation, make full use of the conventional batteries production equipment that current enterprise production line has possessed, fully reduce equipment investment, and do not increase every watt of manufacturing cost of battery;
2, a crystal silicon solar batteries conversion efficiency batch average efficiency that adopts technical solution of the present invention to prepare reaches 20.1%.And optical attenuation, front main grid, backplate and aluminium back surface field pulling force, and the reliability testing of assembly end all meets TUV standard;
3, the back side of back of the body annealing point of the present invention contact battery only adopts mono-layer oxidized aluminium as passivating back structure, without other films of deposition, as diaphragm, having ensured that the high performance of battery wash in advance, has reduced operation, has saved raw material, has saved cost.
Accompanying drawing explanation
Fig. 1 is the structural representation of crystal-silicon solar cell of the present invention.
Embodiment
Below in conjunction with accompanying drawing and by specific embodiment, the present invention is further elaborated.
Fig. 1 is the structural representation that adopts the crystal-silicon solar cell that technical scheme of the present invention prepares, in figure: 1-front surface A g electrode, 2-SiNx antireflective film, 3-phosphorus-diffused layer, 4-P type silicon substrate, 5-alumina layer, the non-type Al layer that burns in the 6-back side.
Embodiment 1:
The mono-layer oxidized aluminium in the back side, as a crystal silicon solar energy battery preparation method for passivating film, comprises the following steps:
(1) silicon chip goes also making herbs into wool of damage, cleaning: selecting 156mm p type single crystal silicon sheet is basis material, its resistivity is 1 ohmcm, the p-type silicon chip of selecting is removed to damage the rear NaOH or the potassium hydroxide solution that with mass fraction, are 0.5% and at 75 ℃, P type silicon chip surface is carried out to chemical corrosion, prepare the matte of Pyramid, with the hydrofluoric acid that mass fraction is 1%, clean and remove impurity subsequently;
(2) phosphorus diffusion: adopt the method for tubular type phosphorus diffusion, specifically in diffusion furnace at the temperature of 600 ℃, adopt POCl
3phosphorus is carried out in the front of silicon chip and diffuse to form N-shaped layer, making P type crystalline silicon sheet resistance is 25ohm/sq, and after diffusion, the phosphorosilicate glass of self-assembling formation, as the mask of battery front side, is realized the object that emitter junction and polishing are removed in the back side;
(3) laser (532nm, green glow) utilizes phosphorosilicate glass to realize selective emitter junction as doped source, and the sheet resistance in laser doping district is 55ohm/sq;
(4) back side phosphorosilicate glass is removed, and realize polished backside, remove phosphorosilicate glass and clean: adopting the online roller type equipment of wet method, the back side is removed phosphorosilicate glass and (although only carry out phosphorus in the front of silicon chip, is diffuseed to form phosphorosilicate glass, but phosphorosilicate glass can penetrate into the back side of silicon chip), realize polished backside, then remove front phosphorosilicate glass, then adopting mass fraction is that 0.5% hydrofluoric acid solution cleans;
(5) in the growth of the back side of silicon chip aluminum oxide film, the thickness of aluminum oxide film is 5nm;
(6), in the growth of the front of silicon chip silicon nitride antireflection film, with the method grown silicon nitride antireflection film of PECVD, ALD or APCVD, wherein the thickness of silicon nitride anti-reflecting film is 55nm;
(7) laser open film: at the back of the body surface of silicon chip laser ablation aluminum oxide film: the mode of employing linear array is carried out etching oxidation aluminium film, and the live width of linear array is 15 um, and spacing is 250um;
(8) back up electrode and do not corrode the aluminium lamination of aluminium oxide, positive printed silver grid line: wherein the back side adopts the method for aluminium paste silk screen printing or the method for PVD AM aluminum metallization to print electrode and do not corrode the aluminium lamination of aluminium oxide;
(9) sintering, test: carry out sintering in sintering furnace, the temperature of sintering is 450 ℃, forms complete cell piece N
+pP
+structure, after finishing, carries out performance test to the battery of preparing.
The order of described step 4 and step 5 can be put upside down.
Embodiment 2:
The mono-layer oxidized aluminium in the back side, as a crystal silicon solar energy battery preparation method for passivating film, comprises the following steps:
(1) silicon chip goes also making herbs into wool of damage, cleaning: selecting 156mm p type single crystal silicon sheet is basis material, its resistivity is 3 ohmcm, the p-type silicon chip of selecting is removed to damage the rear NaOH or the potassium hydroxide solution that with mass fraction, are 1% and at 80 ℃, P type silicon chip surface is carried out to chemical corrosion, prepare the matte of Pyramid, with the hydrofluoric acid that mass fraction is 10%, clean and remove impurity subsequently;
(2) phosphorus diffusion: adopt the method for tubular type phosphorus diffusion, specifically in diffusion furnace at the temperature of 700 ℃, adopt POCl
3phosphorus is carried out in the front of silicon chip and diffuse to form N-shaped layer, making P type crystalline silicon sheet resistance is 100ohm/sq, and after diffusion, the phosphorosilicate glass of self-assembling formation, as the mask of battery front side, is realized the object that emitter junction and polishing are removed in the back side;
(3) laser (532nm, green glow) utilizes phosphorosilicate glass to realize selective emitter junction as doped source, and the sheet resistance in laser doping district is 55ohm/sq;
(4) back side phosphorosilicate glass is removed, and realize polished backside, remove phosphorosilicate glass and clean: adopting the online roller type equipment of wet method, the back side is removed phosphorosilicate glass and (although only carry out phosphorus in the front of silicon chip, is diffuseed to form phosphorosilicate glass, but phosphorosilicate glass can penetrate into the back side of silicon chip), realize polished backside, then remove front phosphorosilicate glass, then adopting mass fraction is that 1% hydrofluoric acid solution cleans;
(5) in the growth of the back side of silicon chip aluminum oxide film, the thickness of aluminum oxide film is 15nm;
(6) at the front of silicon chip silicon nitride antireflection film, grow, use PECVD(PCVD), ALD(ald) or APCVD(aumospheric pressure cvd) method grown silicon nitride antireflection film, wherein the thickness of silicon nitride anti-reflecting film is 80nm;
(7) laser open film: at the back of the body surface of silicon chip laser ablation aluminum oxide film: the mode of employing linear array is carried out etching oxidation aluminium film, and the live width of linear array is 40um, and spacing is 1mm;
(8) back up electrode and do not corrode the aluminium lamination of aluminium oxide, positive printed silver grid line: wherein the back side adopts method or the PVD(physical vapour deposition (PVD) of aluminium paste silk screen printing) method of AM aluminum metallization prints electrode and does not corrode the aluminium lamination of aluminium oxide;
(9) sintering, test: carry out sintering in sintering furnace, the temperature of sintering is 600 ℃, forms complete cell piece N
+pP
+structure, after finishing, carries out performance test to the battery of preparing.
The order of described step 4 and step 5 can be put upside down.
Embodiment 3:
The mono-layer oxidized aluminium in the back side, as a crystal silicon solar energy battery preparation method for passivating film, comprises the following steps:
(1) silicon chip goes also making herbs into wool of damage, cleaning: selecting 156mm p type single crystal silicon sheet is basis material, its resistivity is 4.5 ohmcm, the p-type silicon chip of selecting is removed to damage the rear NaOH or the potassium hydroxide solution that with mass fraction, are 1.5% and at 85 ℃, P type silicon chip surface is carried out to chemical corrosion, prepare the matte of Pyramid, with the hydrofluoric acid that mass fraction is 20%, clean and remove impurity subsequently;
(2) phosphorus diffusion: adopt the method for tubular type phosphorus diffusion, specifically in diffusion furnace at the temperature of 800 ℃, adopt POCl
3phosphorus is carried out in the front of silicon chip and diffuse to form N-shaped layer, making P type crystalline silicon sheet resistance is 120ohm/sq, and after diffusion, the phosphorosilicate glass of self-assembling formation, as the mask of battery front side, is realized the object that emitter junction and polishing are removed in the back side;
(3) laser (532nm, green glow) utilizes phosphorosilicate glass to realize selective emitter junction as doped source, and the sheet resistance in laser doping district is 55ohm/sq;
(4) back side phosphorosilicate glass is removed, and realize polished backside, remove phosphorosilicate glass and clean: adopting the online roller type equipment of wet method, the back side is removed phosphorosilicate glass and (although only carry out phosphorus in the front of silicon chip, is diffuseed to form phosphorosilicate glass, but phosphorosilicate glass can penetrate into the back side of silicon chip), realize polished backside, then remove front phosphorosilicate glass, then adopting mass fraction is that 10% hydrofluoric acid solution cleans;
(5) in the growth of the back side of silicon chip aluminum oxide film, the thickness of aluminum oxide film is 65nm;
(6), in the growth of the front of silicon chip silicon nitride antireflection film, with the method grown silicon nitride antireflection film of PECVD, ALD or APCVD, wherein the thickness of silicon nitride anti-reflecting film is 100nm;
(7) laser open film: at the back of the body surface of silicon chip laser ablation aluminum oxide film: the mode of employing linear array is carried out etching oxidation aluminium film, and the live width of linear array is 100 um, and spacing is 2.5mm;
(8) back up electrode and do not corrode the aluminium lamination of aluminium oxide, positive printed silver grid line: wherein the back side adopts the method for aluminium paste silk screen printing or the method for PVD AM aluminum metallization to print electrode and do not corrode the aluminium lamination of aluminium oxide;
(9) sintering, test: carry out sintering in sintering furnace, the temperature of sintering is 700 ℃, forms complete cell piece N
+pP
+structure, after finishing, carries out performance test to the battery of preparing.
The order of described step 4 and step 5 can be put upside down.
Embodiment 4:
The mono-layer oxidized aluminium in the back side, as a crystal silicon solar energy battery preparation method for passivating film, comprises the following steps:
(1) silicon chip goes also making herbs into wool of damage, cleaning: selecting 156mm p type single crystal silicon sheet is basis material, its resistivity is 5.5 ohmcm, the p-type silicon chip of selecting is removed to damage the rear NaOH or the potassium hydroxide solution that with mass fraction, are 2% and at 85 ℃, P type silicon chip surface is carried out to chemical corrosion, prepare the matte of Pyramid, with the hydrofluoric acid that mass fraction is 30%, clean and remove impurity subsequently;
(2) phosphorus diffusion: adopt the method for tubular type phosphorus diffusion, specifically in diffusion furnace at the temperature of 900 ℃, adopt POCl
3phosphorus is carried out in the front of silicon chip and diffuse to form N-shaped layer, making P type crystalline silicon sheet resistance is 150ohm/sq, and after diffusion, the phosphorosilicate glass of self-assembling formation, as the mask of battery front side, is realized the object that emitter junction and polishing are removed in the back side;
(3) laser (532nm, green glow) utilizes phosphorosilicate glass to realize selective emitter junction as doped source, and the sheet resistance in laser doping district is 55ohm/sq;
(4) in the growth of the back side of silicon chip aluminum oxide film, the thickness of aluminum oxide film is 100nm;
(5) back side phosphorosilicate glass is removed, and realize polished backside, remove phosphorosilicate glass and clean: adopting the online roller type equipment of wet method, the back side is removed phosphorosilicate glass and (although only carry out phosphorus in the front of silicon chip, is diffuseed to form phosphorosilicate glass, but phosphorosilicate glass can penetrate into the back side of silicon chip), realize polished backside, then remove front phosphorosilicate glass, then adopting mass fraction is that 25% hydrofluoric acid solution cleans;
(6), in the growth of the front of silicon chip silicon nitride antireflection film, with the method grown silicon nitride antireflection film of PECVD, ALD or APCVD, wherein the thickness of silicon nitride anti-reflecting film is 120nm;
(7) laser open film: at the back of the body surface of silicon chip laser ablation aluminum oxide film: the mode of employing linear array is carried out etching oxidation aluminium film, and the live width of linear array is 150 um, and spacing is 5mm;
(8) back up electrode and do not corrode the aluminium lamination of aluminium oxide, positive printed silver grid line: wherein the back side adopts the method for aluminium paste silk screen printing or the method for PVD AM aluminum metallization to print electrode and do not corrode the aluminium lamination of aluminium oxide;
(9) sintering, test: carry out sintering in sintering furnace, the temperature of sintering is 800 ℃, forms complete cell piece N
+pP
+structure, after finishing, carries out performance test to the battery of preparing.
The order of described step 4 and step 5 can be put upside down.
Adopt the crystal silicon solar batteries conversion efficiency batch average efficiency that the technical scheme of above-mentioned enforcement is prepared to reach 20.1%.And optical attenuation, front main grid, backplate and aluminium back surface field pulling force, and the reliability testing of assembly end all meets TUV standard.
The above is comparatively preferred embodiment of the present invention, be noted that for those skilled in the art, under the premise without departing from the principles of the invention, the modification of the various equivalent form of values of the present invention is all fallen within to the application's claims limited range.
Claims (9)
1. the mono-layer oxidized aluminium in the back side, as a crystal silicon solar energy battery preparation method for passivating film, is characterized in that: comprise the following steps:
(1) silicon chip goes also making herbs into wool of damage, cleaning: select p-type silicon chip as silicon substrate, the p-type silicon chip of selecting is gone under alkali lye, to carry out surperficial matte after damage, then under acid condition, carry out chemical cleaning, remove surface impurity;
(2) phosphorus diffusion: phosphorus is carried out in the front of silicon chip and diffuse to form N-shaped layer, the phosphorosilicate glass of diffusion self-assembling formation, as the mask of battery front side, is realized the object that emitter junction and polishing are removed in the back side;
(3) back side phosphorosilicate glass is removed, and realizes polished backside, removes phosphorosilicate glass and cleans;
(4) at the back side of silicon chip aluminum oxide film, grow;
(5) at the front of silicon chip silicon nitride antireflection film, grow;
(6) laser open film: at the back of the body surface of silicon chip laser ablation aluminum oxide film;
(7) back up electrode and do not corrode the aluminium lamination of aluminium oxide, positive printed silver grid line;
(8) sintering, test.
2. the mono-layer oxidized aluminium in the back side according to claim 1 is as the crystal silicon solar energy battery preparation method of passivating film, it is characterized in that: its resistivity of p-type silicon chip of selecting in step 1 is 0.5-6 ohmcm, the making herbs into wool of silicon chip, cleaning are specially: the NaOH that is 0.5-2% with mass fraction or potassium hydroxide solution carry out chemical corrosion to P type silicon chip surface at 75-85 ℃, prepare the matte of Pyramid, with the hydrofluoric acid that mass fraction is 0.5-30%, clean subsequently.
3. the mono-layer oxidized aluminium in the back side according to claim 1 is as the crystal silicon solar energy battery preparation method of passivating film, it is characterized in that: in step 2, phosphorus diffusion adopts the method for tubular type phosphorus diffusion, specifically in diffusion furnace at the temperature of 600-900 ℃, adopt POCl
3phosphorus is carried out in the front of silicon chip and diffuse to form N-shaped layer, making P type crystalline silicon sheet resistance is 20-150ohm/sq.
4. the mono-layer oxidized aluminium in the back side according to claim 1 is as the crystal silicon solar energy battery preparation method of passivating film, it is characterized in that: the back side phosphorosilicate glass in step 3 is removed, and realize polished backside, the method of removing phosphorosilicate glass and cleaning, be to adopt online roller type equipment, phosphorosilicate glass is removed at the back side, realizes polished backside, then remove front phosphorosilicate glass, then adopting mass fraction is the hydrofluoric acid solution cleaning of 0.5-30%.
5. the mono-layer oxidized aluminium in the back side according to claim 1, as the crystal silicon solar energy battery preparation method of passivating film, is characterized in that: the thickness of the aluminum oxide film in step 4 is 1-100nm.
6. the mono-layer oxidized aluminium in the back side according to claim 1 is as the crystal silicon solar energy battery preparation method of passivating film, it is characterized in that: in step 5, adopt the method grown silicon nitride antireflection film of PECVD, ALD or APCVD, wherein the thickness of silicon nitride anti-reflecting film is 50-120nm.
7. the mono-layer oxidized aluminium in the back side according to claim 1, as the crystal silicon solar energy battery preparation method of passivating film, is characterized in that: the order of described step 4 and step 5 can be put upside down.
8. the mono-layer oxidized aluminium in the back side according to claim 1 is as the crystal silicon solar energy battery preparation method of passivating film, it is characterized in that: the laser open film in step 6 is to adopt the mode of linear array to carry out etching oxidation aluminium film, the live width of linear array is 5-150 um, and spacing is 200 um-5mm.
9. the mono-layer oxidized aluminium in the back side according to claim 1, as the crystal silicon solar energy battery preparation method of passivating film, is characterized in that: in step 7, adopt the method for aluminium paste silk screen printing or the method for PVD AM aluminum metallization to print electrode and do not corrode the aluminium lamination of aluminium oxide.
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