CN202307914U - Next-generation structure high-efficiency crystalline silicon battery - Google Patents
Next-generation structure high-efficiency crystalline silicon battery Download PDFInfo
- Publication number
- CN202307914U CN202307914U CN 201120424148 CN201120424148U CN202307914U CN 202307914 U CN202307914 U CN 202307914U CN 201120424148 CN201120424148 CN 201120424148 CN 201120424148 U CN201120424148 U CN 201120424148U CN 202307914 U CN202307914 U CN 202307914U
- Authority
- CN
- China
- Prior art keywords
- silicon
- battery
- passivation
- electrode
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
A next-generation structure high-efficiency crystalline silicon battery belongs to the field of crystalline silicon solar batteries. Two layers of membranes of silicon oxide and silicon nitride are formed in the front of the battery so as to form good passivation in the front and reduce surface reflection. The back adopts an aluminum oxide or silicon oxide layer to passivate a P-type substrate and a partial back field structure to form effective back passivation. Slurry is filled in a small hole penetrating through a silicon chip to form an electrode finally. In the back, the electrode led out from the small hole is separated from other portions of the surface by using a mask method or laser to avoid short circuits. An aluminum oxide membrane or silicon oxide membrane is arranged between the P-type substrate and the partial back field, and an n-type layer is arranged between the silicon oxide in the front and the P-type substrate. The next-generation structure high-efficiency crystalline silicon battery effectively combines movable weight technology (MWT), the front double-layer membrane passivation and the back aluminum oxide passivation, overcomes dependence on screen printing silver paste, simultaneously lowers resistance caused by the electrode, and can improve efficiency of a P-type monocrystal battery sheet to more than 20% and efficiency of a polycrystal battery sheet to more than 18%.
Description
Technical field
The utility model relates to a kind of structure high efficiency crystal silicon cell of future generation, belongs to the crystal silicon solar energy battery field.
Background technology
Current, crystal silicon solar energy battery is owing to be limited by optical loss, electron hole compound, and the relevant factors such as various ohmic losses of electrode, and also there is very big room for promotion in efficient.
In order to improve the photoelectric conversion efficiency of battery sheet, it is necessary absorbing and changing more photon.Reducing surface reflection is to increase the photonic absorption important channel with increasing light-receiving area.Reducing surface reflection realizes through surface wool manufacturing and plating antireflective film usually.Yet surface electrode is still restricting the absorption of battery sheet to light to reflection of light.The refinement surface electrode becomes popular research topic with the new electrode structure of employing.The electrode structure of MWT (Metal Wrap through) has significantly reduced the electrode pair reflection of light, and has realized industrialization in part company.The MWT technology be except can reducing the shading area, and figure that can also the frontal electrode is optimized or graphical customizations, in electrical property optimization with all having a clear superiority in aspect the reply customer demand flexibly.
Yet current MWT technology is not still broken away from the dependence to expensive silk screen printing silver slurry, the various resistance that bring by the silk screen printing slurry, and the problem of printing own is still restricting the raising of battery sheet efficient largely.Adopt to electroplate, sputter etc. have been proved to be in semicon industry and laboratory and can have formed good electrode and contact, and can adopt non-precious metals such as nickel, copper, replacement or significantly reduce the use amount of noble metals such as silver.
Along with the raising (silicon purity improves, dislocation density reduction etc.) of solar power silicon tablet quality, and the reduction of phosphorus doping density, the surface recombination of electric charge is seeming more and more important aspect the restriction battery sheet efficient.Silica is better than by the silicon nitride of wide-scale adoption the inactivating performance of silicon chip, and silica adds the silicon nitride duplicature becomes comparatively desirable improvement project.On the other hand, the back side is adopted aluminium oxide passivation to be proved to be and can significantly be promoted battery sheet efficient.
Summary of the invention
The utility model provides a kind of structure high efficiency crystal silicon cell of future generation.
In the current crystal silicon solar energy battery technology, basically all exist surface passivation effect not good, the shading area that the front gate line battery causes is big; The electrode contact resistance is big, relies on expensive shortcomings such as silk-screen slurry, and the utility model adopts front silica passivation; Back side aluminium oxide passivation; Adopt MWT to combine sputtering method to form electrode processing method, significantly improve above-mentioned defective, significantly promote battery sheet efficient.Adopt base metal such as ambrose alloy to form electrode simultaneously, significantly reduce even replace the use of silver.
The purpose of the utility model is to provide a kind of high-efficiency crystal silicon solar cell, and a kind of structure high efficiency crystal silicon cell of future generation forms silica and silicon nitride duplicature at battery front side, and frontal forms good passivation and reduces surface reflection; Alumina layer passivation P type substrate and local aluminum back surface field are adopted in the back side, form effective passivating back; The aperture that runs through silicon chip is filled by slurry, finally forms electrode; Overleaf, the electrode of drawing from aperture forms isolation with mask method or with laser, avoids short circuit; Between substrate of P type and the local back of the body field pellumina is arranged; Between front silica and the substrate of P type n type layer is arranged.
A kind of manufacture method of high-efficiency crystal silicon solar cell increases silica and aluminium oxide passivation step on the common process basis, the MWT technical step, and new grid line forms step; Contain following steps;
The silica passivation, step is meant that the phosphorus doping face at P type silicon chip forms one deck silicon oxide film;
The aluminium oxide passivation step is meant that the non-doping face at P type silicon chip forms one deck pellumina;
MWT (Metal Wrap Through) technical step is meant employing laser drilling, the battery sheet front electrode guiding back side;
New grid line forms step, is meant to adopt to electroplate sputter step.
New grid line forms employing equipment and realizes.Broken away from dependence to high-precision silk screen printing and silk screen printing slurry.Reduced simultaneously because the high electrical resistance loss that the silk screen printing slurry causes.
Adopt this method, can effectively overcome the deficiency in the existing technology, as break away from dependence, reduce resistance, increase light-receiving area etc. the silk screen printing slurry.
The utility model has effectively combined MWT, front duplicature passivation, back side aluminium oxide passivation; And adopted new battery to form scheme, as electroplating, sputter etc. have overcome the dependence to silk screen printing silver slurry, have reduced the resistance that is produced by electrode simultaneously.Can make more than the P type single crystal battery sheet improved efficiency to 20%, more than the P type polycrystalline battery sheet improved efficiency to 18%.
Description of drawings
When combining accompanying drawing to consider; Through with reference to following detailed, can more completely understand the utility model better and learn wherein many attendant advantages easily, but accompanying drawing described herein is used to provide the further understanding to the utility model; Constitute the part of the utility model; Illustrative examples of the utility model and explanation thereof are used to explain the utility model, do not constitute the improper qualification to the utility model, wherein:
Fig. 1 is the structural representation of expression as the utility model embodiment;
Fig. 2 is the method flow diagram of the utility model.
Embodiment
Referring to figs. 1 through Fig. 2 the embodiment of the utility model is described.
As shown in Figure 1, form silica 2 and silicon nitride duplicature 1 at battery front side, frontal forms good passivation and reduces surface reflection; Alumina layer 5 passivation P type substrates 4 and the local back of the body 6 structure are adopted in the back side, form effective passivating back; The aperture that runs through silicon chip is filled by slurry, finally forms electrode 8; Overleaf, separate electrode 8 and other parts of back of the body surface with mask method or with laser formation isolation 7 around the electrode 8, avoid short circuit; Between P type substrate 4 and the local back of the body field 6 pellumina 5 is arranged; Between silica 2 and the P type substrate 4 n type layer 3 is arranged.
The 156mm*156mm polysilicon chip surface of battery have 4*4 totally 16 apertures be 300 microns circular hole, run through silicon chip.
Or: the 125mm*125mm monocrystalline silicon sheet surface of battery have 3*3 totally 9 apertures be 250 microns circular hole, run through silicon chip.
Adopt this method, can effectively overcome the deficiency in the existing technology, as break away from dependence, reduce resistance, increase light-receiving area etc. the silk screen printing slurry.
For achieving the above object, on the common process basis, increase silica and aluminium oxide passivation, the MWT technical method, new grid line forms technical method.
The said silica passivation of the utility model is meant that the phosphorus doping face at P type silicon chip forms one deck silicon oxide film.The frontal table forms good passivation.
The said aluminium oxide passivation of the utility model is meant that the non-doping face at P type silicon chip forms one deck pellumina.To being formed good passivation by the surface.
The described MWT of the utility model (Metal Wrap Through) technology is meant employing laser drilling, the technology at the battery sheet front electrode guiding back side.Reduce the reflection that battery causes, increase light-receiving area.
The described new grid line of the utility model forms technology and is meant the employing plating, and sputter etc. are different from the technology of silk screen printing.Employing equipment is realized.Broken away from dependence to high-precision silk screen printing and silk screen printing slurry.Reduced simultaneously because the high electrical resistance loss that the silk screen printing slurry causes.
Embodiment 1: like Fig. 1, shown in 2;
A kind of manufacture method of high-efficiency crystal silicon solar cell increases silica and aluminium oxide passivation step on the common process basis, the MWT technical step, and new grid line forms step; Contain following steps;
The laser drilling step forms 4*4 totally 16 circular holes that the aperture is about 300 microns on 156mm*156mm polysilicon chip surface with laser, runs through silicon chip;
The making herbs into wool step adopts HNO3/HF/H2O system (nitric acid/hydrofluoric acid/aqueous systems), and nitric acid is that electronics is pure, mass concentration about 69%; Hydrofluoric acid is that electronics is pure, mass concentration about 49%; Water is deionized water, and resistance value is about 18 megaohms centimetre; Three's volume ratio is about 6.5: 1: 3; Temperature 8-11 ℃.The cleaning silicon chip surface, and form matte;
Diffusing step adopts POCl3 (POCl3) silicon chip to be mixed in high temperature dispersing furnace for the phosphorus source, forms emitter, and emitter resistance is 65-90 ohm;
Wet etching step is removed the silicon chip surface phosphorosilicate glass that diffusion produces, and removes the pn knot at the silicon chip back side simultaneously;
Adopt method plating silica and the silicon nitride duplicature of PECVD (plasma reinforced chemical vapour deposition);
Adopt mask corrosion method or laser step, form the figure of the front and back of silicon chip;
Adopt sputter nickel, copper, silver forms electrode on silicon chip, adopt sputtered aluminum to be formed on the back of the body field, part on the silicon chip;
Heat treatment step is handled through insulation at a certain temperature, makes metal and silicon chip form excellent contact.
Embodiment 2: like Fig. 1, shown in 2;
A kind of manufacture method of high-efficiency crystal silicon solar cell increases silica and aluminium oxide passivation step on the common process basis, the MWT technical step, and new grid line forms step; Contain following steps;
The laser drilling step forms 4*4 totally 16 circular holes that the aperture is about 250 microns on 156mm*156mm list/polysilicon chip surface with laser, runs through silicon chip;
Or: the laser drilling step, form 3*3 totally 9 circular holes that the aperture is about 250 microns on 125mm*125mm list/polysilicon chip surface with laser, run through silicon chip;
Making herbs into wool step, polycrystalline adopt HNO3/HF/H2O (nitric acid/hydrofluoric acid/water) system cleaning silicon chip surface, and form matte; Monocrystalline adopts NaOH/IPA/H2O (NaOH/isopropanol) system cleaning silicon chip surface, and forms matte;
Diffusing step adopts POCl3 (POCl3) silicon chip to be mixed in high temperature dispersing furnace for the phosphorus source, forms emitter;
Wet etching step is removed the silicon chip surface phosphorosilicate glass that diffusion produces, and removes the pn knot at the silicon chip back side simultaneously;
Adopt method plating silica and the silicon nitride duplicature of PECVD (plasma reinforced chemical vapour deposition);
Adopt mask corrosion method or laser step, form the figure of the front and back of silicon chip;
Adopt sputter nickel, copper, silver forms electrode on silicon chip, adopt sputtered aluminum to be formed on the back of the body field, part on the silicon chip;
Heat treatment step is handled through insulation at a certain temperature, makes metal and silicon chip form excellent contact.
Obviously, the many modifications made based on the aim of the utility model of those skilled in the art and the variation protection range that belongs to the utility model.
As stated, the embodiment of the utility model has been carried out explanation at length, but as long as break away from the inventive point and the effect of the utility model in fact a lot of distortion can not arranged, this will be readily apparent to persons skilled in the art.Therefore, such variation also all is included within the protection range of the utility model.
Claims (3)
1. a structure high efficiency crystal silicon cell of future generation is characterized in that forming silica and silicon nitride duplicature at battery front side, and frontal forms good passivation and reduces surface reflection; Aluminium oxide or silicon oxide layer passivation P type substrate and local aluminum back surface field are adopted in the back side, form effective passivating back; The aperture that runs through silicon chip is filled by slurry, finally forms electrode; Overleaf, the electrode of drawing from aperture separates its other parts with the surface with mask method or with laser, avoids short circuit; Between substrate of P type and the local back of the body field pellumina or silicon oxide film are arranged; Between front silica and the substrate of P type n type layer is arranged.
2. a kind of structure high efficiency crystal silicon cell of future generation according to claim 1, the 156mm*156mm polysilicon chip surface that it is characterized in that battery have 4*4 totally 16 apertures be 300 microns circular hole, run through silicon chip.
3. a kind of structure high efficiency crystal silicon cell of future generation according to claim 1, the 125mm*125mm monocrystalline silicon sheet surface that it is characterized in that battery have 3*3 totally 9 apertures be 250 microns circular hole, run through silicon chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120424148 CN202307914U (en) | 2011-10-31 | 2011-10-31 | Next-generation structure high-efficiency crystalline silicon battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120424148 CN202307914U (en) | 2011-10-31 | 2011-10-31 | Next-generation structure high-efficiency crystalline silicon battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202307914U true CN202307914U (en) | 2012-07-04 |
Family
ID=46376751
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120424148 Withdrawn - After Issue CN202307914U (en) | 2011-10-31 | 2011-10-31 | Next-generation structure high-efficiency crystalline silicon battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202307914U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386249A (en) * | 2011-10-31 | 2012-03-21 | 北京中联科伟达技术股份有限公司 | High-efficiency crystalline silicon cell with next-generation structure and manufacturing method for high-efficiency crystalline silicon cell |
| CN103165755A (en) * | 2013-03-26 | 2013-06-19 | 中国科学院半导体研究所 | Method for manufacturing metal surrounding solar cell |
| CN103187482A (en) * | 2013-01-15 | 2013-07-03 | 常州亿晶光电科技有限公司 | Manufacturing method for crystalline silicon solar MWT (metallization wrap-through) cell and manufactured cell |
| CN104919598A (en) * | 2012-09-24 | 2015-09-16 | 奥普提汀公司 | A method of passivating a silicon substrate for use in a photovoltaic device |
| CN106876490A (en) * | 2017-02-24 | 2017-06-20 | 常州天合光能有限公司 | N-type crystalline silicon double-side cell of the anti-PID of transformation efficiency high and preparation method thereof |
| CN114406506A (en) * | 2021-12-27 | 2022-04-29 | 江苏日托光伏科技股份有限公司 | Method for improving poor hole plugging of MWT battery |
-
2011
- 2011-10-31 CN CN 201120424148 patent/CN202307914U/en not_active Withdrawn - After Issue
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102386249A (en) * | 2011-10-31 | 2012-03-21 | 北京中联科伟达技术股份有限公司 | High-efficiency crystalline silicon cell with next-generation structure and manufacturing method for high-efficiency crystalline silicon cell |
| CN102386249B (en) * | 2011-10-31 | 2013-08-14 | 北京吉阳技术股份有限公司 | High-efficiency crystalline silicon cell with next-generation structure and manufacturing method for high-efficiency crystalline silicon cell |
| CN104919598A (en) * | 2012-09-24 | 2015-09-16 | 奥普提汀公司 | A method of passivating a silicon substrate for use in a photovoltaic device |
| CN103187482A (en) * | 2013-01-15 | 2013-07-03 | 常州亿晶光电科技有限公司 | Manufacturing method for crystalline silicon solar MWT (metallization wrap-through) cell and manufactured cell |
| CN103165755A (en) * | 2013-03-26 | 2013-06-19 | 中国科学院半导体研究所 | Method for manufacturing metal surrounding solar cell |
| CN103165755B (en) * | 2013-03-26 | 2015-05-06 | 中国科学院半导体研究所 | Method for manufacturing metal surrounding solar cell |
| CN106876490A (en) * | 2017-02-24 | 2017-06-20 | 常州天合光能有限公司 | N-type crystalline silicon double-side cell of the anti-PID of transformation efficiency high and preparation method thereof |
| CN106876490B (en) * | 2017-02-24 | 2018-09-11 | 天合光能股份有限公司 | High-conversion-efficiency PID-resistant N-type crystalline silicon double-sided battery and preparation method thereof |
| CN114406506A (en) * | 2021-12-27 | 2022-04-29 | 江苏日托光伏科技股份有限公司 | Method for improving poor hole plugging of MWT battery |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102386249B (en) | High-efficiency crystalline silicon cell with next-generation structure and manufacturing method for high-efficiency crystalline silicon cell | |
| JP6353039B2 (en) | Method for manufacturing crystalline silicon solar cell | |
| CN103996743B (en) | Aluminium paste burns the preparation method of the back of the body annealing point contact solar cell of partial thin film | |
| CN202307914U (en) | Next-generation structure high-efficiency crystalline silicon battery | |
| US8809097B1 (en) | Passivated emitter rear locally patterned epitaxial solar cell | |
| CN202363468U (en) | Hetero-junction solar battery with point contact back emitting electrode | |
| JP2017535975A (en) | High efficiency N-type double-sided solar cell | |
| CN102437246B (en) | Preparation method of crystalline silicon solar cell | |
| CN103887347A (en) | Double-face P-type crystalline silicon battery structure and manufacturing method thereof | |
| CN103594529A (en) | MWT and passivation combined crystal silicon solar cell and manufacturing method thereof | |
| CN109473492A (en) | It is suitble to the MWT hetero-junction silicon solar cell and preparation method thereof of scale volume production | |
| TW202115921A (en) | Solar cell and manufacturing method thereof | |
| CN101820009A (en) | Crystal silicon solar cell with selective emitter and preparation method thereof | |
| CN102403369A (en) | Passivation dielectric film for solar cell | |
| CN103996747A (en) | Preparing method for crystalline silicon solar battery taking back single-layer aluminum oxide as passivating film | |
| CN101826573A (en) | Method for preparing semiconductor secondary grid-metal primary grid crystalline silicon solar battery | |
| CN102364692A (en) | Double side light receiving crystalline silicon solar cell with fully-passivated structure and manufacturing method thereof | |
| CN202259320U (en) | Backside point contact crystalline silicon solar cell | |
| CN103996745A (en) | Method for manufacturing boron diffusion and phosphorus ion implantation combination solar cell capable of being produced in large-scale mode | |
| CN203674218U (en) | Crystalline silicon solar cell integrating MWP and passive emitter and rear cell technologies | |
| CN209056506U (en) | It is suitble to the MWT hetero-junction silicon solar cell of scale volume production | |
| CN103390660A (en) | Crystalline silicon solar cell and manufacturing method thereof | |
| CN104009119A (en) | Method for manufacturing P type crystalline silicon grooved buried-contact battery | |
| CN103618029A (en) | Method for manufacturing MWT photovoltaic cell with passivated back | |
| CN204067375U (en) | A kind of N-type local aluminium back of the body crystal silicon solar energy battery |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20120704 Effective date of abandoning: 20130814 |
|
| RGAV | Abandon patent right to avoid regrant |