CN103165755B - Method for manufacturing metal surrounding solar cell - Google Patents
Method for manufacturing metal surrounding solar cell Download PDFInfo
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- CN103165755B CN103165755B CN201310100046.6A CN201310100046A CN103165755B CN 103165755 B CN103165755 B CN 103165755B CN 201310100046 A CN201310100046 A CN 201310100046A CN 103165755 B CN103165755 B CN 103165755B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a method for manufacturing a metal surrounding solar cell. The method includes the steps: manufacturing equilaterally triangular through hole arrays on a substrate; performing anisotropic etching for the substrate in alkaline solution to manufacture an antireflection suede; performing impurity diffusion for the substrate in a tubular diffusion furnace to form an emitting electrode; forming a front antireflection dielectric film and a back passivation dielectric film on the front surface and the back surface of the substrate; forming a base between the through hole arrays on the back surface of the substrate, and manufacturing an interdigital base electrode; manufacturing an interdigital emitter electrode in an emitter on the back surface of the substrate, filling through holes with the emitter electrode materials, and connecting all the through hole arrays; manufacturing fine grid metal electrodes arranged along the edge of an equilateral triangle on the front surface of the substrate; and sintering to form ohmic contact. By the aid of the equilaterally triangular through hole arrays, through hole distribution and electrode arrangement uniformity of the solar cell is improved, the collection rate of photon-generated carriers is increased, and the photoelectric conversion efficiency of the solar cell is improved.
Description
Technical field
The present invention relates to solar cell and preparing technical field thereof, the manufacture method of the metal circulating type solar cell of particularly a kind of arrangement in equilateral triangle via-hole array.
Background technology
Becket geometric pattern (Metal Wrap Through, MWT) solar cell is the new and effective photovoltaic device of international popular recent years.Because the shading of surface electrode is greatly reduced, under identical solar irradiation condition, battery can produce more photogenerated current, thus improves the photoelectric conversion efficiency of battery.
A common feature of MWT solar cell, be that preparation has the through hole running through battery front side and the back side on battery, only remain thin gate metal line at battery front side, positive and negative two electrodes are all placed on the back side.During illumination, the photo-generated carrier that front side emitter district produces is by diffusion, and collected by thin gate metal line, thin gate metal line is connected with hole electrode, and the photo-generated carrier therefore collected by thin gate metal line is transmitted to the emitter electrode of cell backside by hole electrode.Namely the thin gate metal line in front is that metal circulating type is communicated with the metal in through hole, back side emitter pole electrode metal.Like this, the front electrode shading of MWT solar cell greatly reduces, and at the positive and negative electrode of cell backside, the arrangement in interdigital usually, so that the component package in later stage.
The via-hole array of MWT solar cell and another kind of emitter circulating type solar cell mainly adopts cubic dot matrix to distribute (US Patent No. 20050176164A1, US20060162766A1) and hexagonal lattice distribution (Chinese patent 200480018805.3).In the distribution of square dot matrix, the photo-generated carrier distance through hole that diagonal point of intersection produces is comparatively far away, is not easily collected; In the distribution of hexagon dot matrix, this heterogeneity is then even more serious, thus becomes the factor affecting efficiency of solar cell and can not ignore.
Summary of the invention
(1) technical problem that will solve
In view of this, main purpose of the present invention is the manufacture method of the metal circulating type solar cell providing a kind of arrangement in equilateral triangle via-hole array.
(2) technical scheme
For achieving the above object, the invention provides a kind of method making metal circulating type solar cell, comprising:
Substrate makes in the passed through said front surface of equilateral triangle array arrangement and the via-hole array at the back side;
The substrate being manufactured with via-hole array is carried out anisotropic etch in the alkaline solution containing NaOH (NaOH) and isopropyl alcohol (IPA), makes anti-reflection matte;
The substrate being manufactured with anti-reflection matte is placed in tubular diffusion furnace, Impurity Diffusion is carried out in this tubular diffusion furnace, in substrate front, through-hole side wall and substrate back form emitter, and make front side emitter district, through-hole side wall emitter region and back side emitter district be that circulating type is communicated with;
Silicon nitride or silica is utilized to make front anti-reflection dielectric film and passivating back dielectric film at substrate front and back;
Between the via-hole array of substrate back, etch away sections dielectric film and the emitter region material below it form base, the back side, and in this base, make interdigital base electrode by silk screen printing;
In substrate back emitter region, make interdigital emitter region electrode, emitter region electrode material fills up through hole, connects all via-hole array;
The thin grid metal electrode along the arrangement of equilateral triangle edge is made in substrate front;
Sintering, makes base electrode, emitter region electrode and carefully forms ohmic contact between grid metal electrode and substrate material;
In such scheme, described substrate is monocrystalline silicon, polysilicon, amorphous silicon, GaAs or the indium phosphide that semiconductor material substrate comprises that doping type is N-shaped or p-type.
In such scheme, the via-hole array of described equilateral triangle arrangement, its through hole is positioned at the summit of equilateral triangle, through hole runs through the front and back of material base, equilateral triangle side size range is 10 microns to 5 millimeters, through-hole aperture scope is 1 micron to 0.5 millimeter, and shape of through holes is cylindrical, truncated cone-shaped, square or polygon.
In such scheme, describedly in tubular diffusion furnace, carrying out Impurity Diffusion, is pass into carry out Impurity Diffusion containing impurity gaseous source, liquid source or the Solid Source contrary with substrate conduction type in this tubular diffusion furnace.
In such scheme, described is that using plasma strengthens chemical vapour deposition (CVD) (PECVD) or thermal oxidation process realizes at substrate front and back making silicon nitride or silica.
In such scheme, described between the via-hole array of substrate back etch away sections dielectric film and the emitter region material below it realized by reactive ion etching (RIE) or chemical corrosion or laser grooving technique.
In such scheme, described in substrate back base, make interdigital base electrode and in emitter region, make interdigital emitter region electrode realized by silk screen printing, base electrode is between Kong Zhen, emitter electrode cover via-hole array.
In such scheme, the thin grid metal electrode in described substrate front, along the arrangement of equilateral triangle edge, directly connects between Kong Yukong, and is connected with the emitter electrode that the back side covers via-hole array.
In such scheme, the thin grid metal electrode in described front is realized by photoetching technique or silk screen printing.
In such scheme, described sintering is realized by chain-type sintering furnace or pipe type sintering furnace or rapid thermal treatment (RTP).
(3) beneficial effect
As can be seen from technique scheme, the beneficial effect that the present invention has is: adopt equilateral triangle via-hole array to make metal circulating type solar cell, when carrier diffusion length is certain, the through hole number comprised in unit light-receiving area in equilateral triangle dot matrix is minimum, and uniformity is best.Therefore the present invention is adopted to make metal circulating type solar cell, can with minimum via count, improve the uniformity of the distribution of metal circulating type solar cell through hole and electrode arrangements, improve the collection rate of photo-generated carrier in front, improve the photoelectric conversion efficiency of solar cell.Simultaneously backplate can be in line interdigital, is conducive to silk-screen printing technique.
Accompanying drawing explanation
Fig. 1 is the method flow diagram of the making metal circulating type solar cell according to the embodiment of the present invention;
Fig. 2 is the arrangement schematic diagram of the equilateral triangle via-hole array according to the embodiment of the present invention.
Fig. 3 is the MWT solar cell front thin grid metal electrode schematic diagram of the arrangement in equilateral triangle via-hole array according to the embodiment of the present invention.
Fig. 4 be according to the embodiment of the present invention in equilateral triangle via-hole array arrangement MWT back of solar cell base electrode and emitter region electrode schematic diagram.
Fig. 5 is the MWT solar cell process chart of arranging in equilateral triangle via-hole array made according to the embodiment of the present invention.
Reference numeral: 1 substrate, 2 through holes, 3 antireflective mattes, 4 front side emitter districts, 5 through-hole side wall emitter regions, 6 front dielectric films, 7 back side dielectric films, 8 bases, the back side, 9 back side emitter districts, 10 base electrodes, 11 emitter region electrodes, the 12 thin grid metal electrodes in front.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
Fig. 1 is the method flow diagram of the making metal circulating type solar cell according to the embodiment of the present invention, and the method comprises the following steps:
Step 1: make the passed through said front surface of arrangement and the via-hole array at the back side in equilateral triangle on substrate;
Step 2: make anti-reflection matte at the substrate surface of via-hole array;
Step 3: in substrate front, through-hole side wall and the back side forms emitter, makes front side emitter district, through-hole side wall emitter region and back side emitter district be that circulating type is communicated with;
Step 4: make anti-reflection dielectric film in substrate front, makes dielectric passivation film at substrate back;
Step 5: form base, the back side between the via-hole array of substrate back, makes interdigital base electrode in this base;
Step 6: make interdigital emitter region electrode in substrate back emitter region, emitter region electrode material fills up through hole, all via-hole array of emitter region Electrode connection;
Step 7: make the thin grid metal electrode along the arrangement of equilateral triangle edge in substrate front;
Step 8: sintering, makes base electrode, emitter region electrode and carefully form ohmic contact between grid metal electrode and substrate material.
Wherein, substrate described in step 1 is semiconductor material substrate, comprises monocrystalline silicon, polysilicon, amorphous silicon, GaAs or indium phosphide etc. that doping type is N-shaped or p-type.The via-hole array of described equilateral triangle arrangement, as shown in Figure 2, its through hole is positioned at the summit of equilateral triangle, through hole runs through the front and back of material base, equilateral triangle side size range is 10 microns to 5 millimeters, through-hole aperture scope is 1 micron to 0.5 millimeter, and shape of through holes is cylindrical, truncated cone-shaped, square or polygon.
Wherein, making anti-reflection matte at the substrate surface of via-hole array described in step 2, is that the substrate being manufactured with via-hole array is carried out anisotropic etch realization in the alkaline solution containing NaOH (NaOH) and isopropyl alcohol (IPA).
Wherein, described in step 3 in substrate front, through-hole side wall and substrate back form emitter, be be placed in tubular diffusion furnace by the substrate being manufactured with anti-reflection matte to carry out Impurity Diffusion realization, Impurity Diffusion passes into realize containing impurity gaseous source, liquid source or the Solid Source contrary with substrate conduction type in this tubular diffusion furnace.
Anti-reflection and dielectric passivation film is formed at substrate front and back described in step 4, realize in substrate front and back deposit silicon nitride or silica medium film, silicon nitride or silica medium film are that using plasma strengthens chemical vapour deposition (CVD) (PECVD) or thermal oxidation process realizes.
Described in step 5, between the via-hole array of substrate back, etch away sections dielectric film and the emitter region material below it are realized by reactive ion etching (RIE) or chemical corrosion or laser grooving technique.
In substrate back base, make interdigital base electrode described in step 5 and 6 and in emitter region, make interdigital emitter region electrode and realized by silk screen printing.
The thin grid metal electrode made in substrate front described in step 7 along the arrangement of equilateral triangle edge is realized by photoetching technique or silk screen printing.
Described in step 8, sintering is realized by chain-type sintering furnace or pipe type sintering furnace or rapid thermal treatment (RTP).
The metal circulating type solar cell utilizing the method to make, its backplate presses interdigital arrangement, and emitter electrode covers via-hole array, and base electrode is between Kong Zhen; The thin grid metal electrode in front, along the arrangement of equilateral triangle edge, directly connects between Kong Yukong, and is connected with the emitter electrode that the back side covers via-hole array.Fig. 3 show according to the embodiment of the present invention in equilateral triangle via-hole array arrangement MWT solar cell front thin grid metal electrode schematic diagram, Fig. 4 show according to the embodiment of the present invention in equilateral triangle via-hole array arrangement MWT back of solar cell base electrode and emitter region electrode schematic diagram.
Embodiment: the manufacture craft of the MWT solar cell of arrangement in equilateral triangle via-hole array
Fig. 5 is the MWT solar cell process chart of arranging in equilateral triangle via-hole array made according to the embodiment of the present invention, and the method comprises the following steps:
Step 1: the array making equilateral triangle through hole 2 as shown in Figure 2 on the substrate 1, through hole 2 runs through the front and back of substrate 1.
Step 2: have the substrate 1 of triangle through hole array to carry out anisotropic etch in the alkaline solution containing NaOH (NaOH) and isopropyl alcohol (IPA) in work, makes anti-reflection matte 3.
Step 3: lead in tubular diffusion furnace and carry out Impurity Diffusion containing the gaseous source or liquid source or Solid Source with substrate conduction type opposite impurity, in the front of substrate, through-hole side wall and the back side forms emitter, and front side emitter district 4, through-hole side wall emitter region 5 and back side emitter district 9 is communicated with in circulating type.
Step 4: make silicon nitride or silica by plasma enhanced chemical vapor deposition (PECVD) or thermal oxidation, form front anti-reflection dielectric film 6 and passivating back dielectric film 7 respectively at front and back.
Step 5: between via-hole array overleaf, by reactive ion etching (RIE) or chemical corrosion or laser grooving, etch away sections dielectric film and the emitter region material below it, form base, the back side 8, and in base 8, make base electrode 10 by silk screen printing.
Step 6: by making emitter region electrode 11 in silk screen printing overleaf emitter region, emitter region electrode material fills up through hole, connects all through hole 2 arrays.
Step 7: to make the thin grid metal electrode 12 along the arrangement of equilateral triangle edge as shown in Figure 3 in substrate front by photoetching technique or silk screen printing; Interconnected by thin grid metal electrode 12 between neighbour hole and hole, the emitter electrode 11 that the metal of filling in the thin gate metal line in front, through hole and the back side cover via-hole array is communicated with in metal circulating type.
Step 8: finally by chain-type sintering furnace or pipe type sintering furnace or rapid thermal treatment (RTP) sintering, completes base electrode 10 and emitter region electrode 11, ohmic contact between the thin grid metal electrode 12 in front and substrate material.
In the above-described embodiments, equilateral triangle through hole 2 array as shown in Figure 2.Through hole is positioned at the summit of equilateral triangle, and through hole runs through the front and back of material base 1, and equilateral triangle side size range is 10 microns to 5 millimeters, and through-hole aperture scope is 1 micron to 0.5 millimeter, and shape of through holes is cylindrical, truncated cone-shaped, square or polygon.
In the above-described embodiments, the backplate of solar cell presses the interdigital arrangement shown in Fig. 4, and emitter electrode 11 covers through hole 2 array, and base electrode 10 is between Kong Zhen.
The method of this making metal circulating type solar cell provided by the invention, adopt equilateral triangle via-hole array, improve the uniformity of the distribution of metal circulating type solar cell through hole and electrode arrangements, improve the collection rate of photo-generated carrier, and then improve the photoelectric conversion efficiency of solar cell.When carrier diffusion length is certain, the through hole number comprised in unit light-receiving area in equilateral triangle dot matrix is minimum, uniformity is best, therefore the present invention is adopted to make metal circulating type solar cell, can with minimum via count, improve the collection rate of photo-generated carrier in front, simultaneously backplate can be in line interdigital, is conducive to silk-screen printing technique.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (11)
1. make a method for metal circulating type solar cell, it is characterized in that, comprising:
Substrate makes in the passed through said front surface of equilateral triangle array arrangement and the via-hole array at the back side;
The substrate being manufactured with via-hole array is carried out anisotropic etch in the alkaline solution containing NaOH (NaOH) and isopropyl alcohol (IPA), makes anti-reflection matte;
Be placed in tubular diffusion furnace by the substrate being manufactured with anti-reflection matte and carry out Impurity Diffusion, in substrate front, through-hole side wall and substrate back form emitter;
Front anti-reflection dielectric film and passivating back dielectric film is made respectively at substrate front and back;
Between the via-hole array of substrate back, etch away sections dielectric film and the emitter region material below it form base, the back side, and in this base, make interdigital base electrode by silk screen printing;
In substrate back emitter region, make interdigital emitter region electrode, emitter region electrode material fills up through hole, connects all via-hole array;
The thin grid metal electrode along the arrangement of equilateral triangle edge is made in substrate front;
Sintering, makes base electrode, emitter region electrode and carefully forms ohmic contact between grid metal electrode and substrate material.
2. the method for making metal circulating type solar cell according to claim 1, it is characterized in that, described substrate is semiconductor material substrate, comprises monocrystalline silicon, polysilicon, amorphous silicon, GaAs or indium phosphide that doping type is N-shaped or p-type.
3. the method for making metal circulating type solar cell according to claim 1, it is characterized in that, the via-hole array of described equilateral triangle arrangement, its through hole is positioned at the summit of equilateral triangle, through hole runs through the front and back of material base, equilateral triangle side size range is 10 microns to 5 millimeters, and through-hole aperture scope is 1 micron to 0.5 millimeter, and shape of through holes is cylindrical, truncated cone-shaped or polygon.
4. the method for making metal circulating type solar cell according to claim 3, is characterized in that, described polygon is square.
5. the method for making metal circulating type solar cell according to claim 1, it is characterized in that, describedly in tubular diffusion furnace, carrying out Impurity Diffusion, is pass into carry out Impurity Diffusion containing impurity gaseous source, liquid source or the Solid Source contrary with substrate conduction type in this tubular diffusion furnace.
6. the method for making metal circulating type solar cell according to claim 1, is characterized in that, described is that using plasma strengthens the realization of chemical vapour deposition (CVD) (PECVD) method at substrate front and back making silicon nitride or silica.
7. the method for making metal circulating type solar cell according to claim 1, it is characterized in that, described between the via-hole array of substrate back etch away sections dielectric film and the emitter region material below it realized by reactive ion etching (RIE) or chemical corrosion or laser grooving technique.
8. the method for making metal circulating type solar cell according to claim 1, it is characterized in that, described in substrate back base, make interdigital base electrode and in emitter region, make interdigital emitter region electrode realized by silk screen printing, base electrode is between Kong Zhen, and emitter region electrode covers via-hole array.
9. the method for making metal circulating type solar cell according to claim 1, it is characterized in that, the thin grid metal electrode in front of the metal circulating type solar cell that the method makes is arranged along equilateral triangle edge, directly connect between Kong Yukong, and be connected with the emitter region electrode that the back side covers via-hole array.
10. the method for the making metal circulating type solar cell according to claim 1 or 9, is characterized in that, the thin grid metal electrode in described front is realized by photoetching technique or silk screen printing.
The method of 11. making metal circulating type solar cells according to claim 1, is characterized in that, described sintering adopts rapid thermal treatment (RTP) method to realize by chain-type sintering furnace or pipe type sintering furnace.
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| CN103165755B true CN103165755B (en) | 2015-05-06 |
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| US6559479B1 (en) * | 1998-11-25 | 2003-05-06 | Fraunhofer-Gesellscahft Zur Forderung Der Angewandten Forschung E.V. | Thin-film solar array system and method for producing the same |
| CN1813356A (en) * | 2003-06-26 | 2006-08-02 | 日出能源公司 | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
| CN1860618A (en) * | 2003-06-30 | 2006-11-08 | 日出能源公司 | Emitter wrap-through back contact solar cells on this silicon wafers |
| CN1938819A (en) * | 2004-02-05 | 2007-03-28 | 日出能源公司 | Process and fabrication methods for emitter wrap through back contact solar cells |
| CN101383386B (en) * | 2008-10-24 | 2010-12-01 | 中国科学院电工研究所 | Emitter circulating type solar cell and preparation thereof |
| CN202307914U (en) * | 2011-10-31 | 2012-07-04 | 北京吉阳技术股份有限公司 | Next-generation structure high-efficiency crystalline silicon battery |
| CN102969399A (en) * | 2012-11-20 | 2013-03-13 | 上饶光电高科技有限公司 | MWT (Metal Wrap Through) solar battery and manufacturing method thereof |
-
2013
- 2013-03-26 CN CN201310100046.6A patent/CN103165755B/en not_active Expired - Fee Related
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6559479B1 (en) * | 1998-11-25 | 2003-05-06 | Fraunhofer-Gesellscahft Zur Forderung Der Angewandten Forschung E.V. | Thin-film solar array system and method for producing the same |
| CN1813356A (en) * | 2003-06-26 | 2006-08-02 | 日出能源公司 | Fabrication of back-contacted silicon solar cells using thermomigration to create conductive vias |
| CN1860618A (en) * | 2003-06-30 | 2006-11-08 | 日出能源公司 | Emitter wrap-through back contact solar cells on this silicon wafers |
| CN1938819A (en) * | 2004-02-05 | 2007-03-28 | 日出能源公司 | Process and fabrication methods for emitter wrap through back contact solar cells |
| CN101383386B (en) * | 2008-10-24 | 2010-12-01 | 中国科学院电工研究所 | Emitter circulating type solar cell and preparation thereof |
| CN202307914U (en) * | 2011-10-31 | 2012-07-04 | 北京吉阳技术股份有限公司 | Next-generation structure high-efficiency crystalline silicon battery |
| CN102969399A (en) * | 2012-11-20 | 2013-03-13 | 上饶光电高科技有限公司 | MWT (Metal Wrap Through) solar battery and manufacturing method thereof |
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