JP6353039B2 - Method for manufacturing crystalline silicon solar cell - Google Patents
Method for manufacturing crystalline silicon solar cell Download PDFInfo
- Publication number
- JP6353039B2 JP6353039B2 JP2016522185A JP2016522185A JP6353039B2 JP 6353039 B2 JP6353039 B2 JP 6353039B2 JP 2016522185 A JP2016522185 A JP 2016522185A JP 2016522185 A JP2016522185 A JP 2016522185A JP 6353039 B2 JP6353039 B2 JP 6353039B2
- Authority
- JP
- Japan
- Prior art keywords
- back surface
- aluminum
- solar cell
- crystalline silicon
- local
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims description 39
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 134
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 134
- 238000002161 passivation Methods 0.000 claims description 70
- 230000005684 electric field Effects 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 55
- 238000007650 screen-printing Methods 0.000 claims description 34
- 238000010304 firing Methods 0.000 claims description 30
- 238000009792 diffusion process Methods 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 8
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 38
- 239000010703 silicon Substances 0.000 description 38
- 230000005540 biological transmission Effects 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 229910052814 silicon oxide Inorganic materials 0.000 description 13
- 229910052581 Si3N4 Inorganic materials 0.000 description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 12
- 239000000243 solution Substances 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 229910004205 SiNX Inorganic materials 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 8
- 239000007864 aqueous solution Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 238000005406 washing Methods 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 229910000676 Si alloy Inorganic materials 0.000 description 4
- 230000002378 acidificating effect Effects 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 239000005360 phosphosilicate glass Substances 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 229910004012 SiCx Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000000699 topical effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Description
本発明は、太陽光発電技術の分野に属し、具体的に両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池及びその製造方法に関する。 The present invention belongs to the field of photovoltaic power generation technology, and specifically relates to a crystalline silicon solar cell having a local aluminum back surface electric field which is double-sided translucent and a method for manufacturing the same.
太陽光発電技術は、大面積のｐ−ｎ接合ダイオードを用いて太陽エネルギーを電気エネルギーに変換する技術である。このｐ−ｎ接合ダイオードを太陽電池と称する。太陽電池を製造する半導体材料はすべて所定の禁制帯幅を有し、太陽電池が太陽光に輻射されたとき、エネルギーが禁制帯幅を超える光子は、太陽電池に電子正孔対を発生し、ｐ−ｎ接合は電子正孔対を分離し、ｐ−ｎ接合の非対称性によって異なる型の光誘起キャリアの流動方向を決め、外部電気回路の接続によって外部へ電力を出力することができる。これは普通の電気化学電池の原理に類似する。 The photovoltaic power generation technology is a technology that converts solar energy into electrical energy using a large-area pn junction diode. This pn junction diode is referred to as a solar cell. All semiconductor materials that manufacture solar cells have a predetermined forbidden bandwidth, and when the solar cell is radiated to sunlight, photons whose energy exceeds the forbidden bandwidth generate electron-hole pairs in the solar cell, The pn junction separates electron-hole pairs, determines the flow direction of different types of photo-induced carriers according to the asymmetry of the pn junction, and can output power to the outside by connecting an external electric circuit. This is similar to the principle of ordinary electrochemical cells.
通常、工業生産ｐ型結晶シリコン太陽電池はアルミニウム裏面電界構成を用いる。即ち、裏面全体にアルミニウムペーストをスクリーン印刷し、焼成後にアルミニウム裏面電界が形成される。この構成の欠点は、裏面パッシベーションがなく、裏面の反射率が低いことであり、太陽電池の電圧や電流の性能に影響を及ぼす。局所アルミニウム裏面電界である結晶シリコン太陽電池は上記の欠点を克服し、この電池はパッシベーション効果を有する太陽電池の裏面パッシベーション膜を用いると共に、裏面の反射率を向上する。パッシベーション膜の有効のパッシベーションシリコン材料の表面に存在する大量のダングリングボンドと欠陥（例えばビットエラー、結晶粒界及び欠陥など）によって、光誘起キャリアのシリコン表面再結合速度を低減させる。少数キャリアの有効寿命を向上することによって、太陽電池の光電変換効率を向上する。パッシベーション膜は、同時に裏面反射を向上する効果を有することによって、シリコン材料が太陽光に対する吸収を増加し、光誘起キャリアの濃度を向上して光電流の密度を向上する。 Typically, industrially produced p-type crystalline silicon solar cells use an aluminum back surface field configuration. That is, an aluminum paste is screen-printed on the entire back surface, and an aluminum back surface electric field is formed after firing. The disadvantage of this configuration is that there is no backside passivation and the backside reflectance is low, which affects the voltage and current performance of the solar cell. The crystalline silicon solar cell, which is a local aluminum back surface electric field, overcomes the above drawbacks, and this cell uses a back surface passivation film of a solar cell having a passivation effect and improves the back surface reflectance. The large amount of dangling bonds and defects (eg, bit errors, grain boundaries and defects) present on the surface of the effective passivation silicon material of the passivation film reduce the silicon surface recombination rate of photoinduced carriers. By improving the effective life of minority carriers, the photoelectric conversion efficiency of the solar cell is improved. The passivation film has the effect of improving back reflection at the same time, so that the silicon material increases absorption of sunlight, improves the concentration of photoinduced carriers, and improves the density of photocurrent.
パッシベーション膜の種類及び製造方法は以下の通りである。即ち、ＰＥＣＶＤ非結晶シリコン膜、ＰＥＣＶＤＳｉＣｘ膜、熱酸化、湿式酸化又はスピンコートにより形成された酸化シリコン膜、ＳｉＯ２／ＳｉＮｘ堆積膜、ＣＶＤ、ＭＯＣＶＤ、ＰＥＣＶＤ、ＡＰＣＶＤ又はＡＬＤにより製造されたＡｌ２Ｏ３膜、Ａｌ２Ｏ３／ＳｉＮｘ堆積膜などである。 The type and manufacturing method of the passivation film are as follows. That is, PECVD amorphous silicon film, PECVD SiCx film, silicon oxide film formed by thermal oxidation, wet oxidation or spin coating, SiO2 / SiNx deposition film, Al2O3 film manufactured by CVD, MOCVD, PECVD, APCVD or ALD, Al2O3 / SiNx deposited film.
通常、電流を導出するため、裏面パッシベーション膜に孔又は線が開けられる必要があり、それからアルミニウムペーストをスクリーン印刷し、焼成後に局所アルミニウム裏面電界が形成される。孔又は線の総面積は一般裏面の１〜１５％を占め、面積が小さすぎると、裏面の接触抵抗は増加され、面積が大きすぎると、裏面再結合速度は増加され、両方とも電池の光電変換効率に影響を及ぼす。孔又は線はレーザー又は化学的腐蝕の方法を用いて開けられる。アルミニウムペーストが裏面電界全体パータンを用いてスクリーン印刷される。即ち、アルミニウムペーストによって裏電極以外の全部裏面領域が被覆される。このように、裏面から入射又は散乱の光は電池に吸収されることができず、光電変換効率に影響を及ぼす。 Usually, in order to derive current, holes or lines need to be opened in the backside passivation film, and then aluminum paste is screen printed and a local aluminum backside electric field is formed after firing. The total area of the holes or lines occupies 1-15% of the general back surface, and if the area is too small, the contact resistance on the back surface is increased, and if the area is too large, the back surface recombination rate is increased, both of which are Affects conversion efficiency. The holes or lines are opened using laser or chemical corrosion methods. Aluminum paste is screen printed using the entire back surface field pattern. That is, the entire back surface area other than the back electrode is covered with the aluminum paste. Thus, light incident or scattered from the back surface cannot be absorbed by the battery, affecting the photoelectric conversion efficiency.
本発明は、両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池を提供することを目的とし、当該太陽電池はシリコン基板の裏面にある裏面パッシベーション膜上に局所アルミニウム裏面電界を設置することによって、両面透光構成が形成され、当該太陽電池のおもて面だけでなく、裏面でも入射又は散乱の光を受光及び吸収することによって、太陽電池の光電変換効率を向上する。 An object of the present invention is to provide a crystalline silicon solar cell having a local aluminum back surface electric field which is translucent on both sides, and the solar cell has a local aluminum back surface electric field installed on a back surface passivation film on the back surface of a silicon substrate. Thus, a double-sided light-transmitting configuration is formed, and the photoelectric conversion efficiency of the solar cell is improved by receiving and absorbing incident or scattered light not only on the front surface of the solar cell but also on the back surface.
本発明のもう一つの目的は、両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池の製造方法であり、当該方法はプロセスが簡単で、コストも低い。 Another object of the present invention is a method for manufacturing a crystalline silicon solar cell having a local aluminum back surface electric field which is double-sided transmission, which is simple in process and low in cost.
本発明の第一目的は、以下の技術案によって実現する。
両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池であり、シリコン基板と、前記シリコン基板のおもて面に設置されたエミッタ、反射低減のおもて面パッシベーション膜及びおもて面電極と、前記シリコン基板の裏面に設置された裏面パッシベーション膜、裏面電界及び裏面電極と、を備えており、前記裏面電界は局所アルミニウム裏面電界であり、前記裏面電界は裏面パッシベーション膜上に孔又は溝が開けられ、孔又は溝を開ける領域に線状アルミニウムペーストを用いて前記孔又は溝を開ける領域を被覆し、局所裏面パッシベーション膜をアルミニウムペーストで被覆せずに保留し、焼成後に孔又は溝を開ける領域に局所アルミニウム裏面電界を形成することによって、前記局所アルミニウム裏面電界と前記裏面電極とが連通される。
The first object of the present invention is realized by the following technical solution.
A crystalline silicon solar cell having a local aluminum back surface electric field that is light-transmitting on both sides, a silicon substrate, an emitter installed on the front surface of the silicon substrate, a front surface passivation film for reducing reflection, and a front surface An electrode, and a back surface passivation film, a back surface electric field and a back surface electrode installed on the back surface of the silicon substrate, wherein the back surface field is a local aluminum back surface field, and the back surface field is a hole or hole on the back surface passivation film. A groove is opened, and the hole or groove opening area is covered with a linear aluminum paste to cover the hole or groove opening area, the local back surface passivation film is not covered with aluminum paste, and the hole or groove after firing is retained. Forming the local aluminum back surface electric field in the region where And the electrode is communicated.
本発明の好ましい案として以下の技術案が採用される。
電流を収集するように、裏面パッシベーション層（膜）上に孔又は溝が開けられた後、スクリーン印刷又はスパッタリングによる複数のアルミニウム線（線状アルミニウムペースト）を孔又は溝を開ける領域を被覆し、局所裏面パッシベーション膜をアルミニウムペーストで被覆せずに保留し、スクリーン印刷又はスパッタリングによる線状アルミニウムペーストパターンは、直接又は間接に裏面電極と接続しなければならない。
The following technical solution is adopted as a preferable solution of the present invention.
After the holes or grooves are formed on the back surface passivation layer (film) so as to collect current, a plurality of aluminum wires (linear aluminum paste) by screen printing or sputtering cover the areas where the holes or grooves are formed, The local back surface passivation film is not covered with aluminum paste, and the linear aluminum paste pattern by screen printing or sputtering must be connected directly or indirectly to the back electrode.
本発明の両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池は、太陽電池の光電機能を向上することができ、コストも削減することができる。 The crystalline silicon solar cell having a local aluminum back surface electric field which is a double-sided light transmission according to the present invention can improve the photoelectric function of the solar cell and reduce the cost.
本発明の線状アルミニウムペーストは互いに平行に設置されてもよく、所定の夾角で設置されてもよい。好ましくは線状アルミニウムペーストの幅が２０〜２０００μｍであり、好ましくは隣接の両線状アルミニウムペースト間の距離Ｐ２が２００〜２０００μｍである。 The linear aluminum paste of the present invention may be installed in parallel to each other, or may be installed at a predetermined depression angle. Preferably, the width of the linear aluminum paste is 20 to 2000 μm, and preferably the distance P2 between adjacent linear aluminum pastes is 200 to 2000 μm.
本発明の好ましい方案として、裏面パッシベーション層（膜）上に互いに平行する孔又は溝が開けられ、前記孔又は前記溝に前記孔又は前記溝の形状に適合するアルミニウムペーストを設置して、アルミニウムペーストで前記孔又は前記溝を開ける領域を全面に被覆するが、局所裏面パッシベーション膜をアルミニウムペーストで被覆せずに保留し、焼成後に孔又は溝を開ける領域に局所アルミニウム裏面電界を形成し、且つ前記局所アルミニウム裏面電界と前記裏面電極とが連通されることによって、両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池が形成される。 As a preferred method of the present invention, holes or grooves parallel to each other are formed on the back surface passivation layer (film), and an aluminum paste that fits the shape of the holes or the grooves is installed in the holes or the grooves. The region where the hole or the groove is opened is covered over the entire surface, but the local back surface passivation film is retained without being covered with the aluminum paste, and a local aluminum back surface electric field is formed in the region where the hole or the groove is opened after firing, and By connecting the local aluminum back surface electric field and the back electrode, a crystalline silicon solar cell having a local aluminum back surface electric field that is a double-sided light transmission is formed.
本発明の孔又は溝を開ける領域は、すべて線状アルミニウムペーストによって被覆される。 All the areas for making holes or grooves of the present invention are covered with linear aluminum paste.
本発明の開けられた孔又は溝は互いに平行であってもよく、互いに平行でなくてもよい。例えば、所定の夾角で設置されてもよい。好ましくは孔又は溝を互いに平行に設置すること。 The perforated holes or grooves of the present invention may or may not be parallel to each other. For example, it may be installed at a predetermined depression angle. Preferably the holes or grooves are installed parallel to each other.
本発明では、好ましくは本発明の孔が複数であり、好ましくは間隔に置いて設置されること。好ましくは前記孔の直径Ｄが１０〜２００μｍであり、好ましくは隣接の両孔間の距離Ｐ０が１００〜１０００μｍである。 In the present invention, the holes of the present invention are preferably plural, and are preferably installed at intervals. The diameter D of the holes is preferably 10 to 200 μm, and the distance P0 between both adjacent holes is preferably 100 to 1000 μm.
本発明では、好ましくは溝の幅Ｗ１が１０〜２００μｍであり、好ましくは隣接の両溝間の距離Ｐ１が２００〜２０００μｍである。 In the present invention, the groove width W1 is preferably 10 to 200 μm, and the distance P1 between adjacent grooves is preferably 200 to 2000 μm.
本発明の線状アルミニウムペーストは、電流を収集するように直接又は間接に他の線状アルミニウムペーストなどによって裏面電極と接続される。 The linear aluminum paste of the present invention is connected to the back electrode directly or indirectly by another linear aluminum paste or the like so as to collect current.
本発明の第二目的は以下の技術案によって実現される。
前記両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池の製造方法であって、
結晶シリコン基板を選択するステップと、テクスチャを形成するステップと、洗浄ステップと、燐拡散ステップと、裏面接合を除去するステップと、裏面パッシベーション膜を堆積するステップと、反射低減のおもて面パッシベーション膜を堆積するステップと、裏面パッシベーション膜に孔又は溝を開けるステップと、裏面電極をスクリーン印刷するステップと、孔又は溝を開ける領域が線状アルミニウムペーストによって被覆され、局所裏面パッシベーション膜をアルミニウムペーストで被覆せず保留するステップと、おもて面電極をスクリーン印刷するステップと、焼成後に局所アルミニウム裏面電界を製作し、前記局所アルミニウム裏面電界と前記裏面電極とが連通されるステップによって、両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池が形成される。
The second object of the present invention is realized by the following technical solution.
A method for producing a crystalline silicon solar cell having a local aluminum back surface electric field which is light transmission on both sides,
Selecting a crystalline silicon substrate, forming a texture, cleaning, phosphorous diffusion, removing a backside bond, depositing a backside passivation film, and reducing front surface passivation for reflections A step of depositing a film, a step of forming a hole or groove in the back surface passivation film, a step of screen printing the back surface electrode, and a region where the hole or groove is formed is covered with a linear aluminum paste, and the local back surface passivation film is coated with aluminum paste A step of holding the surface electrode without coating, a step of screen printing the front surface electrode, a step of producing a local aluminum back surface electric field after firing, and the step of communicating the local aluminum back surface electric field with the back surface electrode. Local aluminum backside light that is light Crystalline silicon solar cell having a are formed.
本発明では、好ましくは結晶シリコン基板がｐ型結晶シリコン基板であり、ｐ型単結晶シリコン基板又は多結晶シリコン基板でもよい。 In the present invention, the crystalline silicon substrate is preferably a p-type crystalline silicon substrate, and may be a p-type single crystal silicon substrate or a polycrystalline silicon substrate.
その内、テクスチャの形成、洗浄、燐拡散、裏面パッシベーション膜の堆積、裏面接合の除去、おもて面電極と裏面電極のスクリーン印刷などは、本分野の周知の技術的手段を用いてもよい。 Among them, well-known technical means in this field may be used for texture formation, cleaning, phosphorous diffusion, deposition of a back surface passivation film, removal of back surface bonding, screen printing of the front surface electrode and the back surface electrode, and the like. .
反射低減のおもて面パッシベーション膜は、窒化シリコン膜であってもよく、窒化シリコン／酸化シリコンなどの堆積膜でもよい。 The front surface passivation film for reducing reflection may be a silicon nitride film or a deposited film such as silicon nitride / silicon oxide.
裏面パッシベーション膜は、酸化アルミニウムと窒化シリコンの堆積膜を用いる他に、窒化シリコン／酸化シリコンなどの堆積膜を用いてもよい。その内、窒化シリコン／酸化シリコンの堆積膜において酸化シリコンは、結晶シリコン基板と直接に接触する必要がある。窒酸化シリコン／窒化シリコンの堆積膜及び炭化シリコン／窒化シリコンの堆積膜などを用いてもよい。 In addition to using a deposited film of aluminum oxide and silicon nitride, a deposited film such as silicon nitride / silicon oxide may be used for the back surface passivation film. Among them, silicon oxide needs to be in direct contact with the crystalline silicon substrate in the silicon nitride / silicon oxide deposited film. A silicon nitride oxide / silicon nitride deposited film, a silicon carbide / silicon nitride deposited film, or the like may be used.
孔又は溝を開けるのは、本分野の周知の技術的手段を用いてもよい。例えば、レーザー又は化学的腐蝕の方法を用いて孔又は溝を開けるなど。孔は連続に開けられた孔であってもよく、一定間隔で開けられた孔であってもよい。好ましくは一定間隔で孔が開けられること。溝は点線状に溝が開けられてもよく、実線状に溝が開けられてもよい。好ましくは実線状に溝が開けられること。 Well-known technical means in this field may be used to open the hole or groove. For example, drilling holes or grooves using laser or chemical corrosion methods. The holes may be holes that are continuously formed or holes that are opened at regular intervals. Preferably, the holes are opened at regular intervals. The grooves may be formed in dotted lines or may be formed in solid lines. Preferably, a groove is formed in a solid line shape.
本発明の線状アルミニウムペーストは互いに平行に設置してもよく、所定の夾角で設置してもよい。好ましくは線状アルミニウムペーストの幅が２０〜２０００μｍであり、好ましくは隣接の両線状アルミニウムペースト間の距離Ｐ２が２００〜２０００μｍである。 The linear aluminum paste of the present invention may be installed in parallel to each other, or may be installed at a predetermined depression angle. Preferably, the width of the linear aluminum paste is 20 to 2000 μm, and preferably the distance P2 between adjacent linear aluminum pastes is 200 to 2000 μm.
本発明の好ましい方案として、裏面パッシベーション層（膜）上に互いに平行する孔又は溝が開けられ、孔又は溝に前記孔又は溝の形状に適合するアルミニウムペーストを設置して、アルミニウムペーストで孔又は溝を開ける領域を全面に被覆するが、局所裏面パッシベーション膜をアルミニウムペーストによって被覆せずに保留し、焼成後に孔又は溝を開ける領域に局所アルミニウム裏面電界を形成し、前記局所アルミニウム裏面電界と前記裏面電極とが連通されるによって、両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池が形成される。 As a preferred method of the present invention, holes or grooves parallel to each other are formed on the back surface passivation layer (film), and an aluminum paste suitable for the shape of the holes or grooves is installed in the holes or grooves. Covers the entire area where the groove is to be formed, but does not cover the local back surface passivation film with the aluminum paste, forms a local aluminum back surface electric field in the region where the hole or groove is formed after firing, and By communicating with the back electrode, a crystalline silicon solar cell having a local aluminum back surface electric field that is light-transmitting on both sides is formed.
本発明の孔又は溝を開ける領域は、すべて線状アルミニウムペーストによって被覆される。スクリーン印刷の方法を用いてもよく、スパッタリングの方法を用いてパッシベーション膜上にある孔又は溝をアルミニウムペーストで被覆し、パッシベーション膜に全面に被覆せず、アルミニウムペーストの被覆は孔又は溝のみを被覆することを基準とし、目的は、局所アルミニウム裏面電界を製作し、両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池を形成することにある。これによって、太陽電池の光電変換効率を向上する。 All the areas for making holes or grooves of the present invention are covered with linear aluminum paste. A screen printing method may be used, and a hole or groove on the passivation film is covered with an aluminum paste using a sputtering method, and the entire surface of the passivation film is not covered. On the basis of coating, the purpose is to produce a local aluminum back surface electric field and to form a crystalline silicon solar cell having a local aluminum back surface electric field that is translucent on both sides. This improves the photoelectric conversion efficiency of the solar cell.
本発明の孔又は溝は互いに平行であってもよく、互いに平行でなくてもよい。例えば、所定の夾角で設置してもよい。好ましくは孔又は溝を互いに平行に設置すること。 The holes or grooves of the present invention may or may not be parallel to each other. For example, it may be installed at a predetermined depression angle. Preferably the holes or grooves are installed parallel to each other.
本発明では、好ましくは本発明の孔が複数であり、好ましくは間隔に置いて設置されること。前記孔の直径Ｄは１０〜２００μｍであり、隣接の両孔間の距離Ｐ０は１００〜１０００μｍである。 In the present invention, the holes of the present invention are preferably plural, and are preferably installed at intervals. The diameter D of the hole is 10 to 200 μm, and the distance P0 between both adjacent holes is 100 to 1000 μm.
本発明では、好ましくは溝の幅Ｗ１が１０〜２００μｍであり、好ましくは隣接の両溝間の距離Ｐ１は２００〜２０００μｍである。 In the present invention, the groove width W1 is preferably 10 to 200 μm, and the distance P1 between adjacent grooves is preferably 200 to 2000 μm.
本発明の線状アルミニウムペーストは、電流を収集するように直接又は間接に他の線状アルミニウムペーストなどによって裏面電極と接続される。 The linear aluminum paste of the present invention is connected to the back electrode directly or indirectly by another linear aluminum paste or the like so as to collect current.
本発明の有益の効果は以下の通りである。即ち、本発明で提案された両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池について、このような構成の太陽電池はその裏面パッシベーション層（膜）が完全にアルミニウムペーストによって被覆されず、光は電池の裏面から入射し、吸収されることができ、光束を増加させて、電池の電流やモジュールの出力電力を増加させることによって、電池やモジュールの光電変換効率を向上する。また、アルミニウムペーストの用量を低減することができ、コストを節約する。 The beneficial effects of the present invention are as follows. That is, for a crystalline silicon solar cell having a local aluminum back surface electric field which is a double-sided light transmission proposed in the present invention, the back surface passivation layer (film) of the solar cell having such a configuration is not completely covered with an aluminum paste, Light can enter and be absorbed from the backside of the battery, increasing the luminous flux and increasing the battery current and module output power, thereby improving the photoelectric conversion efficiency of the battery or module. Also, the dose of aluminum paste can be reduced, saving cost.
次に、附図及び好ましい実施案を併せて、本発明のその他の特徴及び利点を詳しく説明する。 Next, other features and advantages of the present invention will be described in detail with reference to the accompanying drawings and preferred embodiments.
［実施例１］
本実施例は、両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池の構成及びその製造方法を説明し（電池の断面図は図１に示す）、具体的なステップは以下の通りである。即ち、
[Example 1]
In this example, a structure of a crystalline silicon solar cell having a local aluminum back surface electric field that is a double-sided light transmission and a manufacturing method thereof are described (the cross-sectional view of the cell is shown in FIG. 1), and specific steps are as follows. is there. That is,
Ａ、抵抗率は０．１〜１０Ω・ｃｍである少量ドープｐ型単結晶シリコン基板を選択して、テクスチャ形成溝に放置し、含有量が０．５〜５重量％である水酸化ナトリウムの脱イオン水溶液において、温度が７５〜９０℃の条件の下で表面テクスチャを行い、テクスチャ構造が形成される。 A, a small amount doped p-type single crystal silicon substrate having a resistivity of 0.1 to 10 Ω · cm is selected and left in a textured groove, and the content of sodium hydroxide having a content of 0.5 to 5% by weight In a deionized aqueous solution, surface texture is performed under conditions of a temperature of 75 to 90 ° C., and a texture structure is formed.
Ｂ、シリコン基板の表面に対して洗浄し、洗浄は化学溶液で行い、化学溶液はフッ化水素酸、硝酸、塩酸、硫酸及びその他の添加剤の一種又は複種の混合水溶液であってもよい。洗浄時間は０．５〜６０分であり、温度は５〜９０℃である。 B, the surface of the silicon substrate is cleaned, the cleaning is performed with a chemical solution, and the chemical solution may be a mixed aqueous solution of one or more of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives. The washing time is 0.5 to 60 minutes, and the temperature is 5 to 90 ° C.
Ｃ、上記のテクスチャ形成基板を洗浄した後、７００〜１０００℃の炉芯管に放置して、燐（Ｐ）の拡散を行い、ｎ型エミッタを製作する。拡散時間は７０〜１５０分であり、拡散後のエミッタのシート抵抗は５０〜１５０Ω／□である。 C. After washing the texture-formed substrate, it is left in a furnace core tube at 700 to 1000 ° C. to diffuse phosphorus (P) to produce an n-type emitter. The diffusion time is 70 to 150 minutes, and the sheet resistance of the diffused emitter is 50 to 150 Ω / □.
Ｄ、上記の拡散後のシリコン基板に対して、アルカリ性又は酸性湿式エッチング法を用いてそのシリコン基板裏面のｎ型拡散層及び燐ケイ酸ガラスを除去する。 D. The n-type diffusion layer and the phosphosilicate glass on the back surface of the silicon substrate are removed using an alkaline or acidic wet etching method on the silicon substrate after the diffusion.
Ｅ、裏面をパッシベーションにし、裏面の光反射を増加するために、裏面に５〜３０ｎｍ酸化アルミニウムを堆積し（図２に示す）、さらに酸化アルミニウム上に６０〜２００ｎｍの窒化シリコンを堆積し、堆積パッシベーション膜が形成される。 E, 5-30 nm aluminum oxide is deposited on the back surface (as shown in FIG. 2), and 60-200 nm silicon nitride is further deposited on the aluminum oxide to passivate the back surface and increase light reflection on the back surface. A passivation film is formed.
Ｆ、ＰＥＣＶＤに生成したＳｉＮｘはおもて面パッシベーション膜及び反射低減層として、膜厚は７５〜８８ｎｍであり、屈折率は１．９〜２．３の間である。 SiNx produced in F and PECVD has a film thickness of 75 to 88 nm and a refractive index of 1.9 to 2.3 as a front passivation film and a reflection reducing layer.
Ｇ、レーザーの方法を用いて裏面パッシベーション膜（１）上に孔（２）が開けられ、好ましくは孔直径Ｄが１０〜２００μｍであり、好ましくは孔間の距離Ｐ０が１００〜１０００μｍである。図３に示す。 G, a hole (2) is formed on the back surface passivation film (1) using a laser method, preferably the hole diameter D is 10 to 200 μm, and the distance P0 between the holes is preferably 100 to 1000 μm. As shown in FIG.
Ｈ、裏面電極のスクリーン印刷：モジュールのはんだ付けのために、シリコン基板の裏面に裏面電極（４）をスクリーン印刷する。図５に示す。 H. Screen printing of the back electrode: The back electrode (4) is screen-printed on the back surface of the silicon substrate for module soldering. As shown in FIG.
Ｉ、裏面アルミニウム線のスクリーン印刷：アルミニウム線（３）をスクリーン印刷して（即ち、上記に記載の線状アルミニウムペースト、以下は同じ）、孔を開ける領域を被覆し、アルミニウム線は裏面電極と直接又は間接に接続し、電流をすべて吸収する。アルミニウム線の幅Ｗ２は２０〜２０００μｍであり、線間の距離Ｐ２は２００〜２０００μｍである。 I, Screen printing of back surface aluminum wire: Screen printing of aluminum wire (3) (that is, the linear aluminum paste described above, the same applies hereinafter) covers the area to be perforated, and the aluminum wire is connected to the back electrode. Connect directly or indirectly to absorb all current. The width W2 of the aluminum line is 20 to 2000 μm, and the distance P2 between the lines is 200 to 2000 μm.
Ｊ、おもて面電極のスクリーン印刷：シリコン基板の燐拡散面（エミッタ面）にスクリーン印刷方法でおもて面金属電極を印刷する。用いられる金属は銀（Ａｇ）である。 J. Screen printing of front surface electrode: A front surface metal electrode is printed on a phosphorous diffusion surface (emitter surface) of a silicon substrate by a screen printing method. The metal used is silver (Ag).
Ｋ、高温快速焼成：スクリーン印刷後のシリコン基板を焼成炉に放置して焼成する。好ましくは焼成温度が４００〜９００℃である。焼成後のおもて面金属銀はＳｉＮｘを貫通して反射低減のパッシベーション膜とエミッタとをオーム接触に形成し、裏面アルミニウム線と、孔を開ける領域のシリコン基板とを反応してアルミニウムシリコン合金及び局所アルミニウム裏面電界が形成されることによって、両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池が形成される。その断面図は図１に示す。 K, high-temperature rapid firing: The silicon substrate after screen printing is left standing in a firing furnace for firing. The firing temperature is preferably 400 to 900 ° C. After firing, the front surface metallic silver penetrates SiNx to form a reflection-reducing passivation film and an emitter in ohmic contact, and reacts the back surface aluminum line with the silicon substrate in the area where the hole is to be formed, to produce an aluminum silicon alloy Then, by forming the local aluminum back surface electric field, a crystalline silicon solar cell having a local aluminum back surface electric field which is a double-sided light transmission is formed. The cross-sectional view is shown in FIG.
上記の方法によって構成された両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池は、シリコン基板（５）と、シリコン基板（５）のおもて面に設置されたエミッタ（６）、反射低減のおもて面パッシベーション膜（７）及びおもて面電極（８）と、シリコン基板（５）の裏面に設置された裏面パッシベーション膜（１）、裏面電界及び裏面電極（４）と、を備え、裏面電界は局所アルミニウム裏面電界（９）であり、裏面電界は裏面パッシベーション膜（１）上に孔又は溝（２）が開けられ、孔又は溝を開ける領域に線状アルミニウムペースト（３）を用いて孔又は溝（２）を開ける領域を被覆し、局所裏面パッシベーション膜（１）をアルミニウムペーストで被覆せずに保留し、焼成後に孔又は溝（２）を開ける領域に局所アルミニウム裏面電界（９）を形成することによって、局所アルミニウム裏面電界（９）と裏面電極（４）とが連通される。当該太陽電池はシリコン基板の裏面にある裏面パッシベーション膜（１）上に局所アルミニウム裏面電界（９）を設置することによって、両面透光構成が形成され、当該太陽電池のおもて面だけでなく、裏面でも入射又は散乱の光（１２）を受光及び吸収することによって、太陽電池の光電変換効率を向上する。 A crystalline silicon solar cell having a local aluminum back surface electric field which is a double-sided light transmission constructed by the above method includes a silicon substrate (5), an emitter (6) installed on the front surface of the silicon substrate (5), A front surface passivation film (7) and a front surface electrode (8) for reducing reflection, a back surface passivation film (1) installed on the back surface of the silicon substrate (5), a back surface electric field and a back surface electrode (4), The back surface electric field is a local aluminum back surface electric field (9), and the back surface electric field has a hole or groove (2) formed on the back surface passivation film (1), and a linear aluminum paste ( 3) is used to cover the area where the hole or groove (2) is to be opened, hold the local back surface passivation film (1) without being covered with aluminum paste, and open the hole or groove (2) after firing. Topical by aluminum to form a back surface field (9), the local aluminum back surface field (9) and the back electrode (4) communicate with each other is passed through the. In the solar cell, a double-sided translucent structure is formed by installing a local aluminum back surface electric field (9) on the back surface passivation film (1) on the back surface of the silicon substrate, and not only the front surface of the solar cell. The photoelectric conversion efficiency of the solar cell is improved by receiving and absorbing incident or scattered light (12) on the back surface.
上記両面透光設計による一組の局所裏面パッシベーションの電池の平均電気性能のデータは表１に示す。その内、アルミニウム線状は本実施例における製造された両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池であり、アルミニウムペーストで全被覆型はその他のステップが本実施例と同じ、アルミニウムペーストで被覆する時、本実施例における孔を開ける領域のみをアルミニウムペーストで被覆すると共に、裏面パッシベーション膜をアルミニウムペーストで被覆せずに保留することではなく、アルミニウムペーストで裏面パッシベーション膜（層）に全面に被覆する。結果から、普通のアルミニウムペーストですべて被覆する局所裏面パッシベーションの電池と比較して、本発明の両面透光である局所裏面パッシベーションの電池は、太陽電池の電流を向上し、効率が０．１〜０．３％まで向上することが明らかである。 Table 1 shows the data of the average electrical performance of a set of local backside passivation batteries by the double sided translucent design. Among them, the aluminum linear shape is a crystalline silicon solar cell having a local aluminum back surface electric field which is a double-sided light transmission manufactured in the present embodiment. When covering with the paste, only the region in which the hole is opened in this embodiment is covered with the aluminum paste, and the back surface passivation film is not covered with the aluminum paste and is not held, but the back surface passivation film (layer) is covered with the aluminum paste. Cover the entire surface. From the results, compared with the local back surface passivation battery that is entirely covered with ordinary aluminum paste, the local back surface passivation battery that is double-sided transmission of the present invention improves the current of the solar cell and has an efficiency of 0.1 to 0.1%. It is clear that it improves to 0.3%.
［実施例２］
本実施例は、両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池の構成及びその製造方法を説明し（電池の断面図は図１に示す）、具体的なステップは以下の通りである。即ち、
[Example 2]
In this example, a structure of a crystalline silicon solar cell having a local aluminum back surface electric field that is a double-sided light transmission and a manufacturing method thereof are described (the cross-sectional view of the cell is shown in FIG. 1), and specific steps are as follows. is there. That is,
Ａ、抵抗率は０．１〜１０Ω・ｃｍである少量ドープｐ型単結晶シリコン基板を選択して、テクスチャ形成溝に放置し、含有量が０．５〜５重量％である水酸化ナトリウムの脱イオン水溶液において、温度が７５〜９０℃の条件の下で表面テクスチャを行い、テクスチャ構造が形成される。 A, a small amount doped p-type single crystal silicon substrate having a resistivity of 0.1 to 10 Ω · cm is selected and left in a textured groove, and the content of sodium hydroxide having a content of 0.5 to 5% by weight In a deionized aqueous solution, surface texture is performed under conditions of a temperature of 75 to 90 ° C., and a texture structure is formed.
Ｂ、シリコン基板の表面に対して洗浄し、洗浄は化学溶液で行い、化学溶液はフッ化水素酸、硝酸、塩酸、硫酸及びその他の添加剤の一種又は複種の混合水溶液であってもよい。洗浄時間は０．５〜６０分であり、温度は５〜９０℃である。 B, the surface of the silicon substrate is cleaned, the cleaning is performed with a chemical solution, and the chemical solution may be a mixed aqueous solution of one or more of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives. The washing time is 0.5 to 60 minutes, and the temperature is 5 to 90 ° C.
Ｃ、上記のテクスチャ形成基板を洗浄した後、７００〜１０００℃の炉芯管に放置して、燐（Ｐ）の拡散を行い、ｎ型エミッタを製作する。拡散時間は７０〜１５０分であり、拡散後のエミッタのシート抵抗は５０〜１００Ω／□である。 C. After washing the texture-formed substrate, it is left in a furnace core tube at 700 to 1000 ° C. to diffuse phosphorus (P) to produce an n-type emitter. The diffusion time is 70 to 150 minutes, and the sheet resistance of the diffused emitter is 50 to 100Ω / □.
Ｄ、上記の拡散後のシリコン基板に対して、アルカリ性又は酸性湿式エッチング法を用いてそのシリコン基板裏面のｎ型拡散層及び燐ケイ酸ガラスを除去する。 D. The n-type diffusion layer and the phosphosilicate glass on the back surface of the silicon substrate are removed using an alkaline or acidic wet etching method on the silicon substrate after the diffusion.
Ｅ、裏面をパッシベーションにし、裏面の光反射を増加するために、裏面に５〜３０ｎｍ酸化シリコンを堆積し（図２に示す）、さらに酸化シリコン上に６０〜２００ｎｍの窒化シリコンを堆積し、堆積パッシベーション膜が形成される。ＰＥＣＶＤに生成したＳｉＯｘ／ＳｉＮｘ堆積はおもて面パッシベーション膜及び反射低減層として、膜厚は８５〜１００ｎｍであり、屈折率は１．９〜２．３の間である。 E, 5-30 nm silicon oxide is deposited on the back surface (as shown in FIG. 2), and 60-200 nm silicon nitride is further deposited on the silicon oxide in order to passivate the back surface and increase light reflection on the back surface. A passivation film is formed. The SiOx / SiNx deposit produced in PECVD has a film thickness of 85-100 nm and a refractive index between 1.9 and 2.3 as a front passivation film and a reflection reducing layer.
Ｆ、レーザーの方法を用いて裏面パッシベーション膜（１）上に溝（２）が開けられ、溝幅Ｗ１は２０〜１００μｍであり、線間の距離Ｐ１が２００〜２０００μｍである。溝が開けられる時に点線状の方法を用いる。図４に示す。 F, a groove (2) is formed on the back surface passivation film (1) using a laser method, the groove width W1 is 20 to 100 μm, and the distance P1 between the lines is 200 to 2000 μm. A dotted line method is used when the groove is opened. As shown in FIG.
Ｇ、裏面電極のスクリーン印刷：モジュールのはんだ付けのために、シリコン基板の裏面に裏面電極（４）をスクリーン印刷する。図５に示す。 G. Screen printing of the back electrode: The back electrode (4) is screen-printed on the back surface of the silicon substrate for module soldering. As shown in FIG.
Ｈ、裏面アルミニウム線のスクリーン印刷：アルミニウム線（３）をスクリーン印刷して、溝を開ける領域を被覆し、アルミニウム線は裏面電極と直接又は間接に接続し、電流をすべて吸収する。アルミニウム線の幅Ｗ２は２０〜２０００μｍであり、線間の距離Ｐ２は２００〜２０００μｍである。 H, Screen printing of backside aluminum wire: Screen printing of aluminum wire (3) covers the area to be grooved, the aluminum wire is connected directly or indirectly to the backside electrode and absorbs all the current. The width W2 of the aluminum line is 20 to 2000 μm, and the distance P2 between the lines is 200 to 2000 μm.
Ｉ、おもて面電極のスクリーン印刷：シリコン基板の燐拡散面（エミッタ面）にスクリーン印刷方法でおもて面金属電極を印刷する。用いられる金属は銀（Ａｇ）である。 I. Screen printing of front surface electrode: A front surface metal electrode is printed on the phosphorous diffusion surface (emitter surface) of the silicon substrate by a screen printing method. The metal used is silver (Ag).
Ｊ、高温快速焼成：スクリーン印刷後のシリコン基板を焼成炉に放置して焼成する。好ましくは焼成温度が４００〜９００℃である。焼成後のおもて面金属銀はＳｉＯｘ／ＳｉＮｘを貫通して反射低減のパッシベーション膜とエミッタとをオーム接触に形成し、裏面アルミニウム線と、孔を開ける領域のシリコン基板とを反応してアルミニウムシリコン合金及び局所アルミニウム裏面電界が形成されることによって、両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池が形成される。太陽電池の具体的な構造は実施例１と同じ。 J, high-temperature rapid firing: The silicon substrate after screen printing is left standing in a firing furnace for firing. The firing temperature is preferably 400 to 900 ° C. After firing, the front surface metallic silver penetrates SiOx / SiNx to form a reflection-reducing passivation film and an emitter in ohmic contact with each other, and reacts the back surface aluminum line with the silicon substrate in the region where the hole is to be formed. By forming the silicon alloy and the local aluminum back surface electric field, a crystalline silicon solar cell having a local aluminum back surface electric field which is a double-sided light transmission is formed. The specific structure of the solar cell is the same as in Example 1.
［実施例３］
本実施例は、両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池の構成及びその製造方法を説明し（電池の断面図は図１に示す）、具体的なステップは以下の通りである。即ち、
[Example 3]
In this example, a structure of a crystalline silicon solar cell having a local aluminum back surface electric field that is a double-sided light transmission and a manufacturing method thereof are described (the cross-sectional view of the cell is shown in FIG. 1), and specific steps are as follows. is there. That is,
Ａ、抵抗率は０．１〜１０Ω・ｃｍである少量ドープｐ型単結晶シリコン基板を選択して、テクスチャ形成溝に放置し、含有量が０．５〜５重量％である水酸化ナトリウムの脱イオン水溶液において、温度が７５〜９０℃の条件の下で表面テクスチャを行い、テクスチャ構造が形成される。 A, a small amount doped p-type single crystal silicon substrate having a resistivity of 0.1 to 10 Ω · cm is selected and left in a textured groove, and the content of sodium hydroxide having a content of 0.5 to 5% by weight In a deionized aqueous solution, surface texture is performed under conditions of a temperature of 75 to 90 ° C., and a texture structure is formed.
Ｂ、シリコン基板の表面に対して洗浄し、洗浄は化学溶液で行い、化学溶液はフッ化水素酸、硝酸、塩酸、硫酸及びその他の添加剤の一種又は複種の混合水溶液であってもよい。洗浄時間は０．５〜６０分であり、温度は５〜９０℃である。 B, the surface of the silicon substrate is cleaned, the cleaning is performed with a chemical solution, and the chemical solution may be a mixed aqueous solution of one or more of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives. The washing time is 0.5 to 60 minutes, and the temperature is 5 to 90 ° C.
Ｃ、上記のテクスチャ形成基板を洗浄した後、７００〜１０００℃の炉芯管に放置して、燐（Ｐ）の拡散を行い、ｎ型エミッタを製作する。拡散時間は７０〜１５０分であり、拡散後のエミッタのシート抵抗は５０〜１５０Ω／□である。 C. After washing the texture-formed substrate, it is left in a furnace core tube at 700 to 1000 ° C. to diffuse phosphorus (P) to produce an n-type emitter. The diffusion time is 70 to 150 minutes, and the sheet resistance of the diffused emitter is 50 to 150 Ω / □.
Ｄ、上記の拡散後のシリコン基板に対して、アルカリ性又は酸性湿式エッチング法を用いてそのシリコン基板裏面のｎ型拡散層及び燐ケイ酸ガラスを除去する。 D. The n-type diffusion layer and the phosphosilicate glass on the back surface of the silicon substrate are removed using an alkaline or acidic wet etching method on the silicon substrate after the diffusion.
Ｅ、裏面をパッシベーションにし、裏面の光反射を増加するために、裏面に５〜３０ｎｍ酸化アルミニウムを堆積し（図２に示す）、さらに酸化アルミニウム上に６０〜２００ｎｍの窒化シリコンを堆積し、堆積パッシベーション膜が形成される。 E, 5-30 nm aluminum oxide is deposited on the back surface (as shown in FIG. 2), and 60-200 nm silicon nitride is further deposited on the aluminum oxide to passivate the back surface and increase light reflection on the back surface. A passivation film is formed.
Ｆ、ＰＥＣＶＤに生成したＳｉＮｘはおもて面パッシベーション膜及び反射低減層として、膜厚は７５〜８８ｎｍであり、屈折率は１．９〜２．３の間である。 SiNx produced in F and PECVD has a film thickness of 75 to 88 nm and a refractive index of 1.9 to 2.3 as a front passivation film and a reflection reducing layer.
Ｇ、化学的腐蝕の方法を用いて裏面パッシベーション膜（１）上に孔（２）が開けられ、好ましくは孔直径Ｄが１０〜２００μｍであり、好ましくは孔間の距離Ｐ０が１００〜１０００μｍである。図３に示す。 G, holes (2) are opened on the backside passivation film (1) using a chemical corrosion method, preferably the hole diameter D is 10-200 μm, preferably the distance P0 between the holes is 100-1000 μm. is there. As shown in FIG.
Ｈ、裏面電極のスクリーン印刷：モジュールのはんだ付けのために、シリコン基板の裏面に裏面電極（４）をスクリーン印刷する。図５に示す。 H. Screen printing of the back electrode: The back electrode (4) is screen-printed on the back surface of the silicon substrate for module soldering. As shown in FIG.
Ｉ、裏面アルミニウム線のスクリーン印刷：アルミニウム線（３）をスクリーン印刷して（即ち、上記に記載の線状アルミニウムペースト）、孔を開ける領域を被覆し、アルミニウム線は裏面電極と直接又は間接に接続し、電流をすべて吸収する。アルミニウム線の幅Ｗ２は２０〜２０００μｍであり、線間の距離Ｐ２は２００〜２０００μｍである。 I. Screen printing of the backside aluminum wire: Screen printing of the aluminum wire (3) (ie, the linear aluminum paste described above) to cover the perforated area, the aluminum wire directly or indirectly with the backside electrode Connect and absorb all current. The width W2 of the aluminum line is 20 to 2000 μm, and the distance P2 between the lines is 200 to 2000 μm.
Ｊ、おもて面電極のスクリーン印刷：シリコン基板の燐拡散面（エミッタ面）にスクリーン印刷方法でおもて面金属電極を印刷する。用いられる金属は銀（Ａｇ）である。 J. Screen printing of front surface electrode: A front surface metal electrode is printed on a phosphorous diffusion surface (emitter surface) of a silicon substrate by a screen printing method. The metal used is silver (Ag).
Ｋ、高温快速焼成：スクリーン印刷後のシリコン基板を焼成炉に放置して焼成する。好ましくは焼成温度が４００〜９００℃である。焼成後のおもて面金属銀はＳｉＮｘを貫通して反射低減のパッシベーション膜とエミッタとをオーム接触に形成し、裏面アルミニウム線と、孔を開ける領域のシリコン基板とを反応してアルミニウムシリコン合金及び局所アルミニウム裏面電界が形成されることによって、両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池が形成される。太陽電池の具体的な構造は実施例１と同じ。 K, high-temperature rapid firing: The silicon substrate after screen printing is left standing in a firing furnace for firing. The firing temperature is preferably 400 to 900 ° C. After firing, the front surface metallic silver penetrates SiNx to form a reflection-reducing passivation film and an emitter in ohmic contact, and reacts the back surface aluminum line with the silicon substrate in the area where the hole is to be formed, to produce an aluminum silicon alloy Then, by forming the local aluminum back surface electric field, a crystalline silicon solar cell having a local aluminum back surface electric field which is a double-sided light transmission is formed. The specific structure of the solar cell is the same as in Example 1.
［実施例４］
本実施例は、両面透型である局所アルミニウム裏面電界を有する結晶シリコン太陽電池の構成及びその製造方法を説明し（電池の断面図は図１に示す）、具体的なステップは以下の通りである。即ち、
[Example 4]
In this example, a structure of a crystalline silicon solar cell having a local aluminum back surface electric field which is a double-sided transmission type and a manufacturing method thereof are described (a cross-sectional view of the cell is shown in FIG. 1), and specific steps are as follows. is there. That is,
Ａ、抵抗率は０．１〜１０Ω・ｃｍである少量ドープｐ型単結晶シリコン基板を選択して、テクスチャ形成溝に放置し、含有量が０．５〜５重量％である水酸化ナトリウムの脱イオン水溶液において、温度が７５〜９０℃の条件の下で表面テクスチャを行い、テクスチャ構造が形成される。 A, a small amount doped p-type single crystal silicon substrate having a resistivity of 0.1 to 10 Ω · cm is selected and left in a textured groove, and the content of sodium hydroxide having a content of 0.5 to 5% by weight In a deionized aqueous solution, surface texture is performed under conditions of a temperature of 75 to 90 ° C., and a texture structure is formed.
Ｂ、シリコン基板の表面に対して洗浄し、洗浄は化学溶液で行い、化学溶液はフッ化水素酸、硝酸、塩酸、硫酸及びその他の添加剤の一種又は複種の混合水溶液であってもよい。洗浄時間は０．５〜６０分であり、温度は５〜９０℃である。 B, the surface of the silicon substrate is cleaned, the cleaning is performed with a chemical solution, and the chemical solution may be a mixed aqueous solution of one or more of hydrofluoric acid, nitric acid, hydrochloric acid, sulfuric acid and other additives. The washing time is 0.5 to 60 minutes, and the temperature is 5 to 90 ° C.
Ｃ、上記のテクスチャ形成基板を洗浄した後、７００〜１０００℃の炉芯管に放置して、燐（Ｐ）の拡散を行い、ｎ型エミッタを製作する。拡散時間は７０〜１５０分であり、拡散後のエミッタのシート抵抗は５０〜１００Ω／□である。 C. After washing the texture-formed substrate, it is left in a furnace core tube at 700 to 1000 ° C. to diffuse phosphorus (P) to produce an n-type emitter. The diffusion time is 70 to 150 minutes, and the sheet resistance of the diffused emitter is 50 to 100Ω / □.
Ｄ、上記の拡散後のシリコン基板に対して、アルカリ性又は酸性湿式エッチング法を用いてそのシリコン基板裏面のｎ型拡散層及び燐ケイ酸ガラスを除去する。 D. The n-type diffusion layer and the phosphosilicate glass on the back surface of the silicon substrate are removed using an alkaline or acidic wet etching method on the silicon substrate after the diffusion.
Ｅ、裏面をパッシベーションにし、裏面の光反射を増加するために、裏面に５〜３０ｎｍ酸化シリコンを堆積し（図２に示す）、さらに酸化シリコン上に６０〜２００ｎｍの窒化シリコンを堆積し、堆積パッシベーション膜が形成される。ＰＥＣＶＤに生成したＳｉＯｘ／ＳｉＮｘ堆積はおもて面パッシベーション膜及び反射低減層として、膜厚は８５〜１００ｎｍであり、屈折率は１．９〜２．３の間である。 E, 5-30 nm silicon oxide is deposited on the back surface (as shown in FIG. 2), and 60-200 nm silicon nitride is further deposited on the silicon oxide in order to passivate the back surface and increase light reflection on the back surface. A passivation film is formed. The SiOx / SiNx deposit produced in PECVD has a film thickness of 85-100 nm and a refractive index between 1.9 and 2.3 as a front passivation film and a reflection reducing layer.
Ｆ、化学的腐蝕の方法を用いて裏面パッシベーション膜（１）上に溝（２）が開けられ、溝幅Ｗ１は２０〜１００μｍであり、線間の距離Ｐ１が２００〜２０００μｍである。溝が開けられる時に点線状の方法を用いる。図４に示す。 F. A groove (2) is formed on the back surface passivation film (1) using a chemical corrosion method, the groove width W1 is 20 to 100 μm, and the distance P1 between the lines is 200 to 2000 μm. A dotted line method is used when the groove is opened. As shown in FIG.
Ｇ、裏面電極のスクリーン印刷：モジュールのはんだ付けのために、シリコン基板の裏面に裏面電極（４）をスクリーン印刷する。図５に示す。 G. Screen printing of the back electrode: The back electrode (4) is screen-printed on the back surface of the silicon substrate for module soldering. As shown in FIG.
Ｈ、裏面アルミニウム線のスクリーン印刷：アルミニウム線（３）をスクリーン印刷して、溝を開ける領域を被覆し、アルミニウム線は裏面電極と直接又は間接に接続し、電流をすべて吸収する。アルミニウム線の幅Ｗ２は２０〜２０００μｍであり、線間の距離Ｐ２は２００〜２０００μｍである。 H, Screen printing of backside aluminum wire: Screen printing of aluminum wire (3) covers the area to be grooved, the aluminum wire is connected directly or indirectly to the backside electrode and absorbs all the current. The width W2 of the aluminum line is 20 to 2000 μm, and the distance P2 between the lines is 200 to 2000 μm.
Ｉ、おもて面電極のスクリーン印刷：シリコン基板の燐拡散面（エミッタ面）にスクリーン印刷方法でおもて面金属電極を印刷する。用いられる金属は銀（Ａｇ）である。 I. Screen printing of front surface electrode: A front surface metal electrode is printed on the phosphorous diffusion surface (emitter surface) of the silicon substrate by a screen printing method. The metal used is silver (Ag).
Ｊ、高温快速焼成：スクリーン印刷後のシリコン基板を焼成炉に放置して焼成する。好ましくは焼成温度が４００〜９００℃である。焼成後のおもて面金属銀はＳｉＯｘ／ＳｉＮｘを貫通して反射低減のパッシベーション膜とエミッタとをオーム接触に形成し、裏面アルミニウム線と、孔を開ける領域のシリコン基板とを反応してアルミニウムシリコン合金及び局所アルミニウム裏面電界が形成されることによって、両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池が形成される。太陽電池の具体的な構造は実施例１と同じ。 J, high-temperature rapid firing: The silicon substrate after screen printing is left standing in a firing furnace for firing. The firing temperature is preferably 400 to 900 ° C. After firing, the front surface metallic silver penetrates SiOx / SiNx to form a reflection-reducing passivation film and an emitter in ohmic contact with each other, and reacts the back surface aluminum line with the silicon substrate in the region where the hole is to be formed. By forming the silicon alloy and the local aluminum back surface electric field, a crystalline silicon solar cell having a local aluminum back surface electric field which is a double-sided light transmission is formed. The specific structure of the solar cell is the same as in Example 1.
［実施例５］
図６に示すように、実施例１〜４と異なるのは、裏面パッシベーション膜（１）の孔又は溝（２）であり、孔又は溝（２）は平行に設置せず、隣接の孔又は溝（２）間に所定の夾角を有してもよい。同様に、孔又は溝（２）が被覆された隣接の線状アルミニウムペースト（３）は平行に設置せず、所定の夾角を有してもよい。
[Example 5]
As shown in FIG. 6, the difference from Examples 1 to 4 is the hole or groove (2) of the back surface passivation film (1), and the hole or groove (2) is not installed in parallel, You may have a predetermined depression angle between groove | channels (2). Similarly, the adjacent linear aluminum paste (3) covered with the hole or groove (2) may not be installed in parallel and may have a predetermined depression angle.
［実施例６］
まず、結晶シリコン基板を選択するステップ、テクスチャを形成するステップ、洗浄ステップ、燐拡散ステップ、裏面接合を除去するステップ、裏面パッシベーション膜を堆積するステップ、反射低減のおもて面パッシベーション膜を堆積するステップ、おもて面電極をスクリーン印刷するステップなどの工程、及び裏面パッシベーション膜（１）に孔又は溝（２）を開けるステップ、孔又は溝（２）を開ける領域を線状アルミニウムペースト（３）で被覆するステップなどは、実施例１〜４と同じ、図７に示すように、実施例１〜４と異なるのは、裏面電極が非連続的方式裏面電極であり、即ち、分段方式裏面電極を用い、局所裏面電極と分段方式裏面電極とを連通させるため、分段方式裏面電極の分離部分を線状アルミニウムペースト（３）で被覆し、局所裏面パッシベーション膜をアルミニウムペーストで被覆せずに保留し、焼成後に局所アルミニウム裏面電界を製作し、前記局所アルミニウム裏面電界と前記裏面電極とが連通されることによって、両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池が形成される。
[Example 6]
First, a step of selecting a crystalline silicon substrate, a step of forming a texture, a cleaning step, a phosphorus diffusion step, a step of removing a back surface junction, a step of depositing a back surface passivation film, and depositing a front surface passivation film for reducing reflection Steps such as a step of screen printing the front surface electrode, a step of opening a hole or groove (2) in the back surface passivation film (1), and a region where the hole or groove (2) is opened is made of a linear aluminum paste (3 ) Is the same as in Examples 1 to 4, and as shown in FIG. 7, the difference from Examples 1 to 4 is that the back electrode is a discontinuous back electrode, that is, a stepped system. In order to connect the local back electrode and the stepped back electrode using the back electrode, the separation part of the stepped back electrode is made of linear aluminum paste ( ), Holding the local back surface passivation film without covering with aluminum paste, producing a local aluminum back surface electric field after firing, and allowing the local aluminum back surface electric field and the back electrode to communicate with each other. A crystalline silicon solar cell having a local aluminum back surface electric field is formed.
以上、好ましい具体的な実施例を挙げて本発明について説明を行った。上記好ましい実施例について本発明については更なる説明を行うためであり、本発明の保護範囲を限定することではない。当業者は、本発明の技術主旨及び内容を逸脱しない範囲で、若干の改良及び修正を行うことができ、例えば、非平行に設置された線状アルミニウムペーストに分段方式裏面電極をスクリーン印刷し、分段方式裏面電極の分断部分又は分離部分をアルミニウムペーストで被覆して、焼成後に局所アルミニウム裏面電界が形成され、その内、局所アルミニウム裏面電界と前記裏面電極とが連通され、局所裏面パッシベーション膜をアルミニウムペーストで被覆せずに保留し、このような局所アルミニウム裏面電界の太陽電池、及び孔の形状が非円状孔であることなどは、本発明権利の保護範囲にあるとみなす。両面透光である局所アルミニウム裏面電界を有する結晶シリコン太陽電池は、裏面電界は局所アルミニウム裏面電界であり、即ち、局所裏面パッシベーション膜をアルミニウムペーストで被覆せずに保留すると共に、局所裏面電界と裏面電極とが連通さればよい。以上は本発明で挙げられた好ましい実施形態であり、本発明を限定するものではない。 The present invention has been described above with reference to preferred specific examples. This is to further explain the present invention with respect to the above preferred embodiments, and not to limit the protection scope of the present invention. A person skilled in the art can make slight improvements and modifications without departing from the technical spirit and content of the present invention. For example, screen-printing of a back electrode of a branched type on a linear aluminum paste placed non-parallel. The divided portion or the separated portion of the stepped back electrode is covered with an aluminum paste, and after firing, a local aluminum back surface electric field is formed. Among them, the local aluminum back surface electric field and the back electrode are communicated, and the local back surface passivation film Is not covered with aluminum paste, and the solar cell having such a local aluminum back surface electric field and the shape of the hole being a non-circular hole are considered to be within the protection scope of the present invention. A crystalline silicon solar cell having a local aluminum back surface electric field which is a double-sided light transmission, the back surface electric field is a local aluminum back surface electric field, that is, the local back surface passivation film is not covered with aluminum paste, and the local back surface electric field and back surface What is necessary is just to communicate with an electrode. The above are preferred embodiments mentioned in the present invention, and do not limit the present invention.
Claims (2)
結晶シリコン基板を選択するステップと、テクスチャを形成するステップと、洗浄ステップと、燐拡散ステップと、裏面接合を除去するステップと、裏面パッシベーション膜を堆積するステップと、反射低減のおもて面パッシベーション膜を堆積するステップと、裏面パッシベーション膜に複数の溝を開けるステップであって、隣接する溝同士が平行ではなく所定の夾角を有するよう溝を開けるステップと、裏面電極をスクリーン印刷するステップと、前記溝が開けられた領域を線状アルミニウムペーストによって、隣接する前記線状アルミニウムペースト同士が平行ではなく所定の夾角を有するよう被覆し、局所裏面パッシベーション膜をアルミニウムペーストで被覆せず保留するステップと、おもて面電極をスクリーン印刷するステップと、焼成後に前記局所裏面電界層を製作し、前記局所裏面電界層と前記裏面電極とが連通されるステップと、を含み、且つ、前記裏面電極が分段方式裏面電極であり、分段方式裏面電極の分離部分を線状アルミニウムペーストで被覆することを特徴とする結晶シリコン太陽電池の製造方法。 A method for producing a crystalline silicon solar cell having a local back surface electric field layer containing aluminum capable of receiving and absorbing light from both sides,
Selecting a crystalline silicon substrate, forming a texture, cleaning, phosphorous diffusion, removing a backside bond, depositing a backside passivation film, and reducing front surface passivation for reflections A step of depositing a film, a step of forming a plurality of grooves in the back surface passivation film, the step of opening the grooves so that adjacent grooves are not parallel to each other but have a predetermined depression angle, and a step of screen printing the back surface electrode; Covering the grooved region with a linear aluminum paste so that the adjacent linear aluminum pastes are not parallel to each other but have a predetermined depression angle, and the local back surface passivation film is not covered with the aluminum paste and is suspended. , Screen printing the front surface electrode The manufactured local back surface field layer after firing, seen including the steps of: said local back surface field layer and the back electrode is communicated, and, the back electrode is a Bundang scheme back electrode, Bundang method A method for producing a crystalline silicon solar cell, wherein a separated portion of a back electrode is covered with a linear aluminum paste .
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310440765.2 | 2013-09-25 | ||
| CN201310440765.2A CN103489934B (en) | 2013-09-25 | 2013-09-25 | Local aluminum back surface field solar cell of a kind of transparent two sides and preparation method thereof |
| PCT/CN2013/085642 WO2015043028A1 (en) | 2013-09-25 | 2013-10-22 | Local aluminum back surface field solar battery with two light-pervious surfaces, and preparation method therefor |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018107689A Division JP2018160680A (en) | 2013-09-25 | 2018-06-05 | Crystal silicon solar cell having local aluminum back surface field of double side translucent |
| JP2018107684A Division JP2018186277A (en) | 2013-09-25 | 2018-06-05 | Crystal silicon solar cell having double side translucent local aluminum back surface field and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016523452A JP2016523452A (en) | 2016-08-08 |
| JP6353039B2 true JP6353039B2 (en) | 2018-07-04 |
Family
ID=49830028
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016522185A Active JP6353039B2 (en) | 2013-09-25 | 2013-10-22 | Method for manufacturing crystalline silicon solar cell |
| JP2018107684A Pending JP2018186277A (en) | 2013-09-25 | 2018-06-05 | Crystal silicon solar cell having double side translucent local aluminum back surface field and manufacturing method thereof |
| JP2018107689A Pending JP2018160680A (en) | 2013-09-25 | 2018-06-05 | Crystal silicon solar cell having local aluminum back surface field of double side translucent |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018107684A Pending JP2018186277A (en) | 2013-09-25 | 2018-06-05 | Crystal silicon solar cell having double side translucent local aluminum back surface field and manufacturing method thereof |
| JP2018107689A Pending JP2018160680A (en) | 2013-09-25 | 2018-06-05 | Crystal silicon solar cell having local aluminum back surface field of double side translucent |
Country Status (3)
| Country | Link |
|---|---|
| JP (3) | JP6353039B2 (en) |
| CN (1) | CN103489934B (en) |
| WO (1) | WO2015043028A1 (en) |
Families Citing this family (41)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576836B (en) * | 2015-01-23 | 2017-02-22 | 浙江晶科能源有限公司 | Method for manufacturing back-passivated solar cells |
| CN104851925B (en) * | 2015-05-25 | 2017-12-01 | 苏州阿特斯阳光电力科技有限公司 | A kind of backside openings structure of local back contact solar cell |
| DE202015004065U1 (en) * | 2015-06-09 | 2015-07-30 | Solarworld Innovations Gmbh | solar cell array |
| CN105047733B (en) * | 2015-07-13 | 2017-10-20 | 苏州阿特斯阳光电力科技有限公司 | A kind of back electrode structure of many main grid solar cells |
| CN106816480A (en) * | 2015-12-01 | 2017-06-09 | 英稳达科技股份有限公司 | The solar cell and its manufacture method of tool emitter-base bandgap grading and passivating back |
| CN106784049B (en) * | 2016-12-30 | 2019-12-10 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of local doped crystalline silicon solar cell and prepared cell |
| CN107039545B (en) * | 2017-03-03 | 2019-11-12 | 浙江爱旭太阳能科技有限公司 | The rear electrode and battery of p-type PERC double-sided solar battery |
| CN106898660B (en) * | 2017-03-03 | 2018-05-18 | 浙江爱旭太阳能科技有限公司 | Beneficial to p-type PERC double-sided solar batteries for absorbing sunlight and preparation method thereof |
| CN107093637A (en) * | 2017-03-03 | 2017-08-25 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar batteries and preparation method thereof, component and system |
| CN106876494A (en) * | 2017-03-03 | 2017-06-20 | 广东爱康太阳能科技有限公司 | The back electrode structure and battery of p-type PERC double-sided solar batteries |
| CN106981522B (en) * | 2017-03-03 | 2018-07-10 | 浙江爱旭太阳能科技有限公司 | PERC solar cells of photoelectric conversion efficiency and preparation method thereof can be improved |
| CN107425080B (en) * | 2017-03-03 | 2019-11-15 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar battery and its component, system and preparation method |
| CN106887475B (en) * | 2017-03-03 | 2019-07-05 | 广东爱旭科技股份有限公司 | P-type PERC double-sided solar battery and its component, system and preparation method |
| CN106876496B (en) * | 2017-03-03 | 2019-07-05 | 广东爱旭科技股份有限公司 | P-type PERC double-sided solar battery and its component, system and preparation method |
| CN106952972B (en) * | 2017-03-03 | 2019-04-19 | 广东爱旭科技股份有限公司 | P-type PERC double-sided solar battery and its component, system and preparation method |
| CN106981528B (en) * | 2017-03-03 | 2020-01-07 | 浙江爱旭太阳能科技有限公司 | Back electrode of P-type PERC double-sided solar cell and cell |
| CN107039543B (en) * | 2017-03-03 | 2019-10-22 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar battery and its component, system and preparation method |
| CN107093636A (en) * | 2017-03-03 | 2017-08-25 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar batteries and preparation method thereof, component and system |
| CN106981527B (en) * | 2017-03-03 | 2019-08-16 | 浙江爱旭太阳能科技有限公司 | The rear electrode and battery of p-type PERC double-sided solar battery |
| CN106847943B (en) * | 2017-03-03 | 2018-10-09 | 广东爱旭科技股份有限公司 | Punch PERC double-sided solar batteries and its component, system and preparation method |
| CN106981526B (en) * | 2017-03-03 | 2019-11-15 | 浙江爱旭太阳能科技有限公司 | The rear electrode and battery of p-type PERC double-sided solar battery |
| CN107039544B (en) * | 2017-03-03 | 2020-08-04 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar cell and preparation method, assembly and system thereof |
| CN106847944A (en) * | 2017-03-03 | 2017-06-13 | 广东爱康太阳能科技有限公司 | The backplate and battery of p-type PERC double-sided solar batteries |
| CN107039546A (en) * | 2017-03-03 | 2017-08-11 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar batteries and preparation method thereof, component and system |
| CN107256894B (en) * | 2017-05-18 | 2018-08-10 | 广东爱旭科技股份有限公司 | Tubular type PERC single side solar cells and preparation method thereof and special equipment |
| CN107256898B (en) * | 2017-05-18 | 2018-08-03 | 广东爱旭科技股份有限公司 | Tubular type PERC double-sided solar batteries and preparation method thereof and special equipment |
| CN107516683A (en) * | 2017-08-04 | 2017-12-26 | 张家港协鑫集成科技有限公司 | Rear surface of solar cell partial metallic contact method and cell manufacturing method |
| CN107706246A (en) * | 2017-08-21 | 2018-02-16 | 无锡嘉瑞光伏有限公司 | The back of the body passivation solar cell and its manufacture method that a kind of back pastes directly burn |
| CN108269863A (en) * | 2017-12-26 | 2018-07-10 | 晶澳太阳能有限公司 | A kind of high mechanical load crystal silicon battery |
| CN108231921A (en) * | 2017-12-29 | 2018-06-29 | 英利能源（中国）有限公司 | A kind of printing process of PERC cell back fields |
| CN108336161A (en) * | 2018-03-29 | 2018-07-27 | 通威太阳能（成都）有限公司 | A kind of solar cell and preparation method thereof of passivating back laser slotting |
| CN108520902A (en) * | 2018-06-07 | 2018-09-11 | 通威太阳能（安徽）有限公司 | A kind of Al-BSF structure improving p-type monocrystalline double-sided solar battery transfer efficiency |
| EP3845921A4 (en) | 2018-08-29 | 2021-10-20 | NEC Corporation | Positioning system, positioning method, and recording medium |
| CN109755329A (en) * | 2018-12-11 | 2019-05-14 | 苏州腾晖光伏技术有限公司 | A kind of preparation method of solar battery |
| CN110350039A (en) * | 2019-04-29 | 2019-10-18 | 南通天盛新能源股份有限公司 | A kind of generating electricity on two sides solar battery and preparation method thereof |
| CN113066893A (en) * | 2019-12-13 | 2021-07-02 | 南通苏民新能源科技有限公司 | Double-sided PERC solar cell and preparation method thereof |
| CN111129176A (en) * | 2019-12-20 | 2020-05-08 | 浙江爱旭太阳能科技有限公司 | Method for producing a solar cell and solar cell |
| CN114420768A (en) * | 2020-10-13 | 2022-04-29 | 意诚新能(苏州)科技有限公司 | Back passivation film, preparation method and crystalline silicon solar cell |
| CN113437161A (en) * | 2021-06-24 | 2021-09-24 | 韩华新能源（启东）有限公司 | Solar cell, preparation method thereof and photovoltaic module |
| CN113725319B (en) * | 2021-08-27 | 2023-04-07 | 常州时创能源股份有限公司 | N-type solar cell and manufacturing method |
| CN113629162A (en) * | 2021-08-31 | 2021-11-09 | 晶澳（扬州）太阳能科技有限公司 | Silicon-based solar cell unit and manufacturing method thereof |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4185332B2 (en) * | 2002-08-29 | 2008-11-26 | シャープ株式会社 | Solar cell and solar cell module using the same |
| JP4481869B2 (en) * | 2005-04-26 | 2010-06-16 | 信越半導体株式会社 | SOLAR CELL MANUFACTURING METHOD, SOLAR CELL, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
| JP2007214372A (en) * | 2006-02-09 | 2007-08-23 | Sharp Corp | Solar battery and its manufacturing method |
| US8569100B2 (en) * | 2008-06-26 | 2013-10-29 | Mitsubishi Electric Corporation | Solar cell and manufacturing method thereof |
| CN101447532A (en) * | 2008-12-22 | 2009-06-03 | 上海晶澳太阳能光伏科技有限公司 | Method for preparing crystalline silicon solar cell with passivation on double surfaces |
| KR101144810B1 (en) * | 2009-07-06 | 2012-05-11 | 엘지전자 주식회사 | Electrode paste for solar cell, solar cell using the paste, and manufacturing method of the solar cell |
| US8975109B2 (en) * | 2009-07-22 | 2015-03-10 | Mitsubishi Electric Corporation | Solar battery cell and production method thereof |
| JP2013048126A (en) * | 2009-12-14 | 2013-03-07 | Mitsubishi Electric Corp | Photovoltaic device and manufacturing method thereof |
| CN101853897A (en) * | 2010-03-31 | 2010-10-06 | 晶澳(扬州)太阳能光伏工程有限公司 | Method for preparing N-type crystalline silicon solar cell with aluminum-based local emitters on back side |
| JP5440433B2 (en) * | 2010-07-15 | 2014-03-12 | 信越化学工業株式会社 | Solar cell manufacturing method and film forming apparatus |
| JP5978564B2 (en) * | 2011-05-26 | 2016-08-24 | 日立化成株式会社 | Passivation film forming material for semiconductor substrate, passivation film for semiconductor substrate and manufacturing method thereof, solar cell element and manufacturing method thereof |
| JP2013030665A (en) * | 2011-07-29 | 2013-02-07 | Sharp Corp | Photoelectric conversion device module, manufacturing method of the same, and photoelectric conversion device |
| JP2013115258A (en) * | 2011-11-29 | 2013-06-10 | Sharp Corp | Photoelectric conversion element and method for manufacturing photoelectric conversion element |
| US20130183795A1 (en) * | 2012-01-16 | 2013-07-18 | E I Du Pont De Nemours And Company | Solar cell back side electrode |
| CN103094414B (en) * | 2013-01-10 | 2015-08-19 | 浙江正泰太阳能科技有限公司 | Carry on the back the preparation method of passivation solar battery back electric field and there is the back of the body passivation solar cell of this back of the body electric field |
| EP2991974B1 (en) * | 2013-04-29 | 2018-04-11 | Basf Se | Process for the preparation of 2-substituted 4-hydroxy-4-methyl-tetrahydropyrans in a reactor cascade |
-
2013
- 2013-09-25 CN CN201310440765.2A patent/CN103489934B/en active Active
- 2013-10-22 JP JP2016522185A patent/JP6353039B2/en active Active
- 2013-10-22 WO PCT/CN2013/085642 patent/WO2015043028A1/en active Application Filing
-
2018
- 2018-06-05 JP JP2018107684A patent/JP2018186277A/en active Pending
- 2018-06-05 JP JP2018107689A patent/JP2018160680A/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2016523452A (en) | 2016-08-08 |
| CN103489934A (en) | 2014-01-01 |
| JP2018186277A (en) | 2018-11-22 |
| WO2015043028A1 (en) | 2015-04-02 |
| CN103489934B (en) | 2016-03-02 |
| JP2018160680A (en) | 2018-10-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6353039B2 (en) | Method for manufacturing crystalline silicon solar cell | |
| EP2371010B1 (en) | Solar cell and method of manufacturing the same | |
| ES2926597T3 (en) | Photovoltaic module, solar cell and method for producing the solar cell | |
| CN104752562A (en) | Preparation method of local boron back surface passive field solar cell | |
| US20110303278A1 (en) | Transparent conducting oxide for photovoltaic devices | |
| JP2009088203A (en) | Solar cell, solar cell module, and manufacturing method for solar cell | |
| CN109585578A (en) | A kind of back junction solar battery and preparation method thereof | |
| CN209471975U (en) | A kind of back junction solar battery | |
| CN216488083U (en) | Back contact battery | |
| KR101057124B1 (en) | Solar cell and manufacturing method thereof | |
| CN202307914U (en) | Next-generation structure high-efficiency crystalline silicon battery | |
| CN111640826A (en) | Preparation method of battery conducting by utilizing selective contact | |
| JP2013125963A (en) | Photovoltaic element | |
| KR20090075421A (en) | Solar cell | |
| KR101198430B1 (en) | Bifacial Photovoltaic Localized Emitter Solar Cell and Method for Manufacturing Thereof | |
| CN103035771B (en) | N-type MWT solar battery structure and manufacturing process thereof | |
| KR101198438B1 (en) | Bifacial Photovoltaic Localized Emitter Solar Cell and Method for Manufacturing Thereof | |
| CN210443566U (en) | Solar cell | |
| CN111524982A (en) | Solar cell | |
| KR20120129016A (en) | Bifacial Photovoltaic Localized Emitter Solar Cell and Method for Manufacturing Thereof | |
| KR101181625B1 (en) | Localized Emitter Solar Cell and Method for Manufacturing Thereof | |
| CN112542519A (en) | Solar cell and preparation method thereof | |
| TWI573284B (en) | Solar cell, module comprising the same, and method of manufacturing the same | |
| CN219677267U (en) | Solar cell structure | |
| KR20140003789A (en) | Solar cell and method for manufacturing the same, and solar cell module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20160823 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161021 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170328 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20170531 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20170816 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20171020 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20171114 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20180131 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20180329 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20180515 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20180607 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 6353039 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |