CN106981528B - Back electrode of P-type PERC double-sided solar cell and cell - Google Patents
Back electrode of P-type PERC double-sided solar cell and cell Download PDFInfo
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 46
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 46
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 46
- 229910052709 silver Inorganic materials 0.000 claims abstract description 150
- 239000004332 silver Substances 0.000 claims abstract description 150
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 146
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 98
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 91
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 70
- 239000010703 silicon Substances 0.000 claims abstract description 70
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 230000005684 electric field Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 239000011267 electrode slurry Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
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- 238000000034 method Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention discloses a back electrode of a P-type PERC double-sided solar cell, which comprises at least 2 mutually parallel back silver main grids and 25-500 mutually parallel aluminum grid lines, wherein the aluminum grid lines are vertically connected with the back silver main grids; the aluminum grid line is connected with the P-type silicon through an aluminum grid slotting region arranged on the back surface of the silicon wafer, and the back silver main grid is connected with the P-type silicon through a back silver slotting region arranged on the back surface of the silicon wafer; and at least one group of back silver slotting units which are arranged at intervals along the extending direction of the back silver main grid are arranged in the back silver slotting region. The invention also discloses a P-type PERC double-sided solar cell. The invention has the advantages of strong current leading-out capability, simple structure and easy industrialization, and simultaneously improves the photoelectric conversion efficiency of the battery.
Description
Technical Field
The invention relates to the field of solar cells, in particular to a back electrode of a P-type PERC double-sided solar cell, and correspondingly, the invention also relates to the P-type PERC double-sided solar cell.
Background
The solar cell power generation is to directly convert solar energy into electric energy by using the solar cell, and the solar cell is a green and environment-friendly product, does not cause environmental pollution and is a renewable resource, so that the solar cell is a novel energy source with wide development prospect under the condition of current energy shortage.
In the process of converting light energy into electric energy, photogenerated carriers generated in the solar cell need to be collected and led out through an externally printed electrode and then connected with an external circuit, so that current is transmitted out. The screen printing process is further subdivided into back silver main grid printing, back silver auxiliary grid printing and positive electrode printing of the solar cell. The positive electrode slurry and the back electrode slurry are printed on the front surface and the back surface of the crystalline silicon solar cell and are sintered to play a role in collecting current. In the prior art, the back electrode consists of a silver main grid and an aluminum back field, and the back electrode is directly contacted with the P-type silicon. However, when the electrode is used in a PERC bifacial solar cell, since the PERC bifacial solar cell is provided with an insulating passivation film on the back surface, it is difficult to achieve the purpose of current transmission by using the conventional back electrode, and thus it is necessary to provide a new back electrode which is applicable to the PERC bifacial solar cell.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a back electrode of a P-type PERC double-sided solar cell, which has the advantages of strong current leading-out capability, simple structure, easy industrialization and improvement of the photoelectric conversion efficiency of the cell.
The technical problem to be solved by the present invention is to provide a P-type PERC double-sided solar cell, which can absorb sunlight on both sides, has strong current guiding capability, simple structure, easy industrialization, and simultaneously improves the photoelectric conversion efficiency of the module,
in order to solve the technical problem, the invention provides a back electrode of a P-type PERC double-sided solar cell, which comprises at least 2 mutually parallel back silver main grids and 25-500 mutually parallel aluminum grid lines, wherein the aluminum grid lines are vertically connected with the back silver main grids;
the aluminum grid line is connected with the P-type silicon through an aluminum grid slotting region arranged on the back surface of the silicon wafer, and the back silver main grid is connected with the P-type silicon through a back silver slotting region arranged on the back surface of the silicon wafer;
and at least one group of back silver slotting units which are arranged at intervals along the extending direction of the back silver main grid are arranged in the back silver slotting region.
As a preferred technical scheme of the back electrode of the P-type PERC double-sided solar cell, at least two groups of back silver slotting units are arranged in the back silver slotting region at intervals along the extending direction of the back silver main grid, and the back silver slotting units of each group are arranged in parallel.
As a preferable technical scheme of the back electrode of the P-type PERC double-sided solar cell, the patterns of the back silver slotting units in the same group are one or a combination of circles, ellipses, triangles, quadrangles, pentagons, hexagons, crosses and stars.
As a preferred technical scheme of the back electrode of the P-type PERC double-sided solar cell, the aluminum grid slotted region is in the same direction or vertical to the aluminum grid line.
As a preferable technical scheme of the back electrode of the P-type PERC double-sided solar cell, the distance between two adjacent back silver slotting units is equal and is 10-4880 mu m.
As a preferable technical scheme of the back electrode of the P-type PERC double-sided solar cell, the distance between two adjacent back silver slotting units is unequal, and the distance is 10-4880 mu m.
As a preferred technical scheme of the back electrode of the P-type PERC double-sided solar cell, the width of the back silver slotting unit is 10-5000 μm; the width of the back silver main grid is 0.5-5 mm.
As a preferable technical scheme of the back electrode of the P-type PERC double-sided solar cell, the number of the back silver main grids is 2-8.
Correspondingly, the invention also provides a P-type PERC double-sided solar cell, which comprises the back electrode, a back silicon nitride film, a back aluminum oxide film, P-type silicon, an N-type emitter, a front silicon nitride film and a front silver electrode; the back electrode, the back silicon nitride film, the back aluminum oxide film, the P-type silicon, the N-type emitter, the front silicon nitride film and the front silver electrode are sequentially connected in a laminated manner from bottom to top;
the back electrode comprises at least 2 mutually parallel back silver main grids and 25-500 mutually parallel aluminum grid lines, and the aluminum grid lines are vertically connected with the back silver main grids;
the aluminum grid line is connected with the P-type silicon through an aluminum grid slotting region arranged on the back surface of the silicon wafer, and the back silver main grid is connected with the P-type silicon through a back silver slotting region arranged on the back surface of the silicon wafer;
and at least one group of back silver slotting units which are arranged at intervals along the extending direction of the back silver main grid are arranged in the back silver slotting region.
Correspondingly, the invention also provides a P-type PERC double-sided solar cell, which comprises the back electrode, a back silicon nitride film, a back aluminum oxide film, P-type silicon, an N-type emitter, a front silicon nitride film and a front silver electrode; the back electrode, the back silicon nitride film, the back aluminum oxide film, the P-type silicon, the N-type emitter, the front silicon nitride film and the front silver electrode are sequentially connected in a laminated manner from bottom to top;
the back electrode comprises at least 2 mutually parallel back silver main grids and 25-500 mutually parallel aluminum grid lines, and the aluminum grid lines are vertically connected with the back silver main grids;
the aluminum grid line is connected with the P-type silicon through an aluminum grid slotting region arranged on the back surface of the silicon wafer, the aluminum grid slotting region is perpendicular to the aluminum grid line, and the back-silver main grid is connected with the P-type silicon through a back-silver slotting region arranged on the back surface of the silicon wafer;
and at least one group of back silver slotting units which are arranged at intervals along the extending direction of the back silver main grid are arranged in the back silver slotting region.
The embodiment of the invention has the following beneficial effects:
the back electrode of the P-type PERC double-sided solar cell can replace the function of an all-aluminum back electric field in the existing single-sided solar cell structure, has the function of a current-carrying conductor, and is suitable for being arranged on the back of the P-type PERC double-sided solar cell to serve as the back electrode. The aluminum grid line and the back silver main grid are connected with the P-type silicon through the slotted regions, and the current leading-out capability of the back electrode is further improved. The back electrode has simple structure, is easy to industrialize, and simultaneously improves the photoelectric conversion efficiency of the battery. The P-type PERC double-sided solar cell adopting the back electrode can save the use amount of silver paste and aluminum paste, reduce the production cost, realize double-sided light energy absorption, remarkably expand the application range of the solar cell and improve the photoelectric conversion efficiency.
Drawings
FIG. 1 is a schematic structural diagram of a back electrode of a P-type PERC bifacial solar cell in accordance with the present invention;
FIG. 2 is a schematic structural diagram of a laser grooving region of a back electrode of a P-type PERC bifacial solar cell in accordance with the present invention;
FIG. 3 is another schematic diagram of a laser trenching region of a back electrode of a P-type PERC bifacial solar cell in accordance with the present invention;
FIG. 4 is a schematic structural diagram of a P-type PERC bifacial solar cell in accordance with the present invention;
FIG. 5 is a schematic structural diagram of another P-type PERC double-sided solar cell in accordance with the present invention;
fig. 6 is a schematic structural diagram of a back electrode and a laser grooving region of the P-type PERC double-sided solar cell of fig. 5.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings.
In recent years, with intensive research by scientists and technicians, a passivated-back PERC solar cell was found to further improve the photoelectric conversion efficiency of the cell. However, the aluminum oxide film and the silicon nitride film on the back of the cell are insulating films and cannot conduct electrons out. Therefore, in a conventional method, a groove is formed in the passivation film below the gate line, and when the gate line is printed, silver paste can be filled into the groove area to form ohmic contact with P-type silicon, so that a conductive function is realized.
The conventional PERC single-sided solar cell is provided with an all-aluminum back electric field on the back of the cell to cover the whole back of a silicon wafer, and the all-aluminum back electric field has the functions of improving open-circuit voltage Voc and short-circuit current Jsc, forcing minority carriers to be far away from the surface and reducing the recombination rate of the minority carriers, thereby improving the cell efficiency on the whole. However, since the all-aluminum back electric field is opaque, the back surface of the solar cell with the all-aluminum back electric field cannot absorb light energy, and only the front surface can absorb light energy, so that the photoelectric conversion efficiency is difficult to be greatly improved.
Therefore, the invention provides a novel back electrode which can replace the function of an all-aluminum back electric field in the existing single-sided solar cell structure, has the function of a current-carrying conductor and is suitable for being arranged on the back of a P-type PERC double-sided solar cell to serve as the back electrode.
As shown in fig. 1 to 4, the invention provides a back electrode of a P-type PERC double-sided solar cell, comprising at least 2 mutually parallel back silver main grids 1 and 25 to 500 mutually parallel aluminum grid lines 2, wherein the aluminum grid lines 2 are vertically connected with the back silver main grids 1;
the aluminum grid line 2 is connected with the P-type silicon 5 through an aluminum grid slotting region 9 formed in the back surface of the silicon wafer, and the back silver main grid 1 is connected with the P-type silicon 5 through a back silver slotting region 10 formed in the back surface of the silicon wafer;
at least one group of back silver slotting units 11 which are arranged at intervals along the extending direction of the back silver main grid 1 are arranged in the back silver slotting region 10.
The back electrode is arranged on the back of a silicon wafer, and in order to be suitable for a double-sided solar cell, the back can absorb sunlight, a full aluminum back electric field is not arranged, a plurality of aluminum grid lines 2 are arranged instead, a laser grooving area is arranged on a back silicon nitride film 3 and a back aluminum oxide film 4 by adopting a laser grooving technology, the laser grooving area is divided into a back silver grooving area 10 and an aluminum grid grooving area 9, back silver paste is printed on the back silver grooving area 10, and a back silver main grid 1 formed after sintering is connected with a P-type silicon 5 through the back silver grooving area 10; and the aluminum paste is printed in the aluminum grid slotted region 9, and the aluminum grid line 2 formed after sintering is connected with the P-type silicon 5 through the aluminum grid slotted region 9. The back silver main grid 1 intersected with the aluminum grid line 2 collects electrons on the aluminum grid line 2 and electrons directly conducted out of the P-type silicon, so that the current output capacity of the whole back electrode is improved.
The aluminum grid line 2 replaces an all-aluminum back electric field, so that the effects of improving the open-circuit voltage Voc and the short-circuit current Jsc, reducing the minority carrier recombination rate and improving the photoelectric conversion efficiency of the cell can be achieved; 25-500 aluminum grid lines 2 are densely distributed on the silicon chip, and form local contact with the P-type silicon 5 through the aluminum grid slotted region 9, so that electrons at all positions of the silicon chip can be timely conveyed out; and the aluminum grid lines 2 do not cover the back of the silicon wafer completely, and sunlight can be projected into the silicon wafer from the light receiving area between the aluminum grid lines 2, so that the back of the silicon wafer absorbs light energy, and the photoelectric conversion efficiency of the cell is greatly improved.
It should be noted that the aluminum gate slotted region 9 and the aluminum gate line 2 may be disposed in the same direction or in a perpendicular direction.
Preferably, the number of the aluminum grid lines 2 is 30-350, and more preferably, the number of the aluminum grid lines 2 is 50-300.
Generally, the width of the aluminum gate line 2 is 30-500 μm, and the width of the aluminum gate groove region 9 is smaller, so that the damage area to the back silicon nitride film 3 and the back aluminum oxide film 4 is small and the damage degree is low. However, the width of the back silver main grid 1 reaches 0.5-5mm and is far wider than that of the aluminum grid line 2, the passivation area of the back surface is reduced due to the overlarge area of the back silver slotting region 10, the minority carrier recombination of the back surface cannot be reduced to the greatest extent, the improvement of the photoelectric conversion efficiency is restricted, and the back silver electrode paste contacting with the P-type silicon is less due to the overlarge area of the back silver slotting region 10, so that the output of current is influenced.
Therefore, through multiple comparison experiments, the inventor designs the total area and arrangement of the back silver slotting units 11 in the back silver slotting region 10, and at least one group of back silver slotting units 11 arranged at intervals along the extending direction of the back silver main grid 1 is arranged in the back silver slotting region 10.
When a group of back silver slotting units 11 arranged at intervals along the extending direction of the back silver main grid 1 are arranged in the back silver slotting region 10, the pattern of the back silver slotting units 11 is one or a combination of a circle, an ellipse, a triangle, a quadrangle, a pentagon, a hexagon, a cross and a star.
Wherein, the width of the back silver slotting unit 11 is 10-5000 μm, preferably, the width of the back silver slotting unit 11 is 200-.
When at least two groups of back silver slotting units 11 which are arranged at intervals along the extending direction of the back silver main grid 1 are arranged in the back silver slotting region 10, the back silver slotting units 11 are arranged in parallel.
As shown in fig. 2, the pattern of the same set of silver-backed grooved cells 11 is one or a combination of a circle, an ellipse, a triangle, a quadrangle, a pentagon, a hexagon, a cross and a star. The back silver slotting units 11 in the same group can be aligned or staggered. The arrangement of the back silver slotting unit 11 in different groups can be the same or different. The different groups of back silver slotting units 11 are aligned as shown in fig. 2, and also can be staggered as shown in fig. 3.
The width of the back silver slotting unit 11 is 10-4880 μm, preferably, the width of the back silver slotting unit 11 is 10-2450 μm.
The back silver slotting units 11 are arranged in parallel, the distance between every two adjacent back silver slotting units 11 is equal, and the distance is 10-4880 mu m; the spacing between two adjacent back silver slotting units 11 can also be unequal, and the spacing is 10-4880 μm, wherein a preferable example is that the spacing between the back silver slotting units 11 in the middle is large, such as 800 μm, and the spacing between the back silver slotting units 11 on two sides is small, such as 200 μm.
It should be noted that the width of the back silver main gate 1 is greater than the width of the back silver grooved region 10, so as to ensure that the back silver paste is filled in the back silver grooved region 10, and thus the back silver main gate 1 and the P-type silicon 5 form a good ohmic contact.
When the number of the back silver main grids 1 is 2-8, the photoelectric conversion performance of the battery reaches the best.
In summary, with the back electrode of the present invention, the aluminum gate line 2 and the back silver main gate 1 are both connected to the P-type silicon 5 through the trenching region, so that the current guiding capability of the back electrode is further improved. The back electrode can be applied to a P-type PERC double-sided solar cell, so that double-sided light energy absorption is realized, the application range of the solar cell is remarkably expanded, and the photoelectric conversion efficiency is improved.
Accordingly, as shown in fig. 4, the present invention also provides a P-type PERC double-sided solar cell, comprising the back electrode, a back silicon nitride film 3, a back aluminum oxide film 4, P-type silicon 5, an N-type emitter 6, a front silicon nitride film 7 and a front silver electrode 8; the back electrode, the back silicon nitride film 3, the back aluminum oxide film 4, the P-type silicon 5, the N-type emitter 6, the front silicon nitride film 7 and the front silver electrode 8 are sequentially connected in a laminated mode from bottom to top.
The back electrode comprises at least 2 mutually parallel back silver main grids 1 and 25-500 mutually parallel aluminum grid lines 2, and the aluminum grid lines 2 are vertically connected with the back silver main grids 1;
the aluminum grid line 2 is connected with the P-type silicon 5 through an aluminum grid slotting region 9 formed in the back of the silicon wafer, the aluminum grid slotting region 9 is in the same direction as the aluminum grid line 2, and the back silver main grid 1 is connected with the P-type silicon 5 through a back silver slotting region 10 formed in the back of the silicon wafer;
at least one group of back silver slotting units 11 which are arranged at intervals along the extending direction of the back silver main grid 1 are arranged in the back silver slotting region 10.
Accordingly, as shown in fig. 5, the present invention also provides a P-type PERC double-sided solar cell, comprising the back electrode, a back silicon nitride film 3, a back aluminum oxide film 4, P-type silicon 5, an N-type emitter 6, a front silicon nitride film 7 and a front silver electrode 8; the back electrode, the back silicon nitride film 3, the back aluminum oxide film 4, the P-type silicon 5, the N-type emitter 6, the front silicon nitride film 7 and the front silver electrode 8 are sequentially connected in a laminated mode from bottom to top.
As shown in fig. 6, the back electrode includes at least 2 mutually parallel back silver main grids 1 and 25-500 mutually parallel aluminum grid lines 2, and the aluminum grid lines 2 are vertically connected with the back silver main grids 1;
the aluminum grid line 2 is connected with the P-type silicon 5 through an aluminum grid slotting region 9 formed in the back surface of the silicon wafer, the aluminum grid slotting region 9 is perpendicular to the aluminum grid line 2, and the back-silver main grid 1 is connected with the P-type silicon 5 through a back-silver slotting region 10 formed in the back surface of the silicon wafer;
at least one group of back silver slotting units 11 which are arranged at intervals along the extending direction of the back silver main grid 1 are arranged in the back silver slotting region 10.
It should be noted that fig. 4 and 5 do not show the back silver grooved region 10, and the number of the aluminum gate lines 2 is too large to be drawn one by one in the drawings, and only a few of them are used as representatives in fig. 4 and 5.
Compared with the existing single-sided solar cell, the P-type PERC double-sided solar cell disclosed by the invention is composed of a plurality of back silver main grids 1 and a plurality of parallel aluminum grid lines 2, the aluminum grid lines 2 not only replace the full aluminum back electric field in the existing single-sided solar cell to realize back light absorption, but also are used for a secondary grid structure in the back silver electrode to be used as a current-carrying conductor to conduct electrons.
And the aluminum grid line 2 and the back silver main grid 1 are both connected with the P-type silicon 5 through the slotted regions, so that the current leading-out capability of the back electrode is further improved.
Finally, the P-type PERC double-sided solar cell prepared by the back electrode can save the use amount of silver paste and aluminum paste, reduce the production cost, realize double-sided light energy absorption, remarkably expand the application range of the solar cell and improve the photoelectric conversion efficiency.
It should be noted that the above embodiments are only intended to illustrate the technical solution of the present invention and not to limit the protection scope of the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention.
Claims (7)
1. The back electrode of the P-type PERC double-sided solar cell is characterized by comprising at least 2 mutually parallel back silver main grids and 25-500 mutually parallel aluminum grid lines, wherein the aluminum grid lines are vertically connected with the back silver main grids;
the aluminum grid lines are connected with the P-type silicon through an aluminum grid slotted region formed in the back of the silicon wafer, the aluminum grid lines are densely distributed on the silicon wafer, and the aluminum grid slotted region is in local contact with the P-type silicon to timely convey electrons out of the silicon wafer;
the back silver main grid is connected with the P-type silicon through a back silver grooving region arranged on the back of the silicon wafer;
at least one group of back silver slotting units which are arranged at intervals along the extending direction of the back silver main grid are arranged in the back silver slotting region; the back silver slotting units in the same group are aligned or staggered;
the width of the back silver slotting unit is 10-5000 microns; the width of the back silver main grid is 0.5-5 mm; the width of the aluminum grid line is 30-500 mu m, and the width of the aluminum grid slotted region is smaller than that of the aluminum grid line;
the aluminum grid groove opening area is vertical to the aluminum grid line.
2. The back electrode of the P-type PERC bifacial solar cell of claim 1, wherein said back silver grooved region has at least two sets of back silver grooved elements spaced apart along the extension of the back silver main grid, each set of back silver grooved elements being disposed in parallel.
3. The back electrode of a P-type PERC bifacial solar cell of claim 1 or 2, wherein the pattern of the same set of back silver grooved cells is one or a combination of circular, oval, triangular, quadrilateral, pentagonal, hexagonal, cruciform and star shaped.
4. The back electrode of the P-type PERC bifacial solar cell of claim 2, wherein the spacing between two adjacent back silver fluting units is equal and is between 10 μm and 4880 μm.
5. The back electrode of the P-type PERC bifacial solar cell of claim 2, wherein the spacing between two adjacent back silver fluting units is unequal and is between 10 μm and 4880 μm.
6. The back electrode of the P-type PERC bifacial solar cell of claim 1, wherein said back silver primary grid has a number of strips ranging from 2 to 8.
7. A P-type PERC double-sided solar cell is characterized by comprising a back electrode, a back silicon nitride film, a back aluminum oxide film, P-type silicon, an N-type emitter, a front silicon nitride film and a front silver electrode; the back electrode, the back silicon nitride film, the back aluminum oxide film, the P-type silicon, the N-type emitter, the front silicon nitride film and the front silver electrode are sequentially connected in a laminated manner from bottom to top;
the back electrode comprises at least 2 mutually parallel back silver main grids and 25-500 mutually parallel aluminum grid lines, and the aluminum grid lines are vertically connected with the back silver main grids;
the aluminum grid lines are connected with the P-type silicon through an aluminum grid slotted region formed in the back of the silicon wafer, the aluminum grid lines are densely distributed on the silicon wafer, and the aluminum grid slotted region is in local contact with the P-type silicon to timely convey electrons out of the silicon wafer;
the aluminum grid slotting region is vertical to the aluminum grid line, and the back silver main grid is connected with the P-type silicon through the back silver slotting region arranged on the back of the silicon wafer;
at least one group of back silver slotting units which are arranged at intervals along the extending direction of the back silver main grid are arranged in the back silver slotting region; the back silver slotting units in the same group are aligned or staggered;
the width of the back silver slotting unit is 10-5000 microns; the width of the back silver main grid is 0.5-5 mm; the width of the aluminum grid line is 30-500 mu m, and the width of the aluminum grid slotted region is smaller than that of the aluminum grid line;
the aluminum grid groove opening area is vertical to the aluminum grid line.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710124876.0A CN106981528B (en) | 2017-03-03 | 2017-03-03 | Back electrode of P-type PERC double-sided solar cell and cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710124876.0A CN106981528B (en) | 2017-03-03 | 2017-03-03 | Back electrode of P-type PERC double-sided solar cell and cell |
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| Publication Number | Publication Date |
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| CN106981528A CN106981528A (en) | 2017-07-25 |
| CN106981528B true CN106981528B (en) | 2020-01-07 |
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| CN110165010A (en) * | 2019-05-23 | 2019-08-23 | 江西展宇新能源股份有限公司 | A kind of two-sided PERC battery and preparation method thereof |
| CN111180535A (en) * | 2020-03-05 | 2020-05-19 | 江西展宇新能科技有限公司 | Double-sided solar cell |
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| CN103489934A (en) * | 2013-09-25 | 2014-01-01 | 晶澳（扬州）太阳能科技有限公司 | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof |
| CN104576773A (en) * | 2013-10-15 | 2015-04-29 | 太阳世界工业美国有限公司 | Solar cell contact structure |
| CN206628489U (en) * | 2017-03-03 | 2017-11-10 | 浙江爱旭太阳能科技有限公司 | The backplate and battery of p-type PERC double-sided solar batteries |
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| CN103489934A (en) * | 2013-09-25 | 2014-01-01 | 晶澳（扬州）太阳能科技有限公司 | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof |
| CN104576773A (en) * | 2013-10-15 | 2015-04-29 | 太阳世界工业美国有限公司 | Solar cell contact structure |
| CN206628489U (en) * | 2017-03-03 | 2017-11-10 | 浙江爱旭太阳能科技有限公司 | The backplate and battery of p-type PERC double-sided solar batteries |
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