CN106981528A - The backplate and battery of p-type PERC double-sided solar batteries - Google Patents
The backplate and battery of p-type PERC double-sided solar batteries Download PDFInfo
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- CN106981528A CN106981528A CN201710124876.0A CN201710124876A CN106981528A CN 106981528 A CN106981528 A CN 106981528A CN 201710124876 A CN201710124876 A CN 201710124876A CN 106981528 A CN106981528 A CN 106981528A
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 49
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 49
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 49
- 229940037003 alum Drugs 0.000 claims abstract description 77
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 71
- 239000010703 silicon Substances 0.000 claims abstract description 71
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 36
- 239000004332 silver Substances 0.000 claims description 36
- 229910052709 silver Inorganic materials 0.000 claims description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 25
- 239000004411 aluminium Substances 0.000 claims description 16
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 230000009466 transformation Effects 0.000 abstract description 11
- 238000010276 construction Methods 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 description 9
- 238000007639 printing Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses a kind of backplate of p-type PERC double-sided solar batteries, including at least 2 silver-colored main grids of the back of the body and 25 500 alum gate lines being parallel to each other being parallel to each other, the alum gate line and the back of the body be silver-colored, and main grid is vertical is connected；The alum gate line is connected by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and the silver-colored main grid of the back of the body is connected by the silver-colored slotted zones of the back of the body opened up in silicon chip back side with P-type silicon；Provided with least one set of along the silver-colored slotted unit of the spaced back of the body of the silver-colored main grid bearing of trend of the back of the body in the silver-colored slotted zones of the back of the body.The invention also discloses a kind of p-type PERC double-sided solar batteries.Using the present invention, electric current export ability is strong, simple in construction, easy industrialization, while improving the photoelectric transformation efficiency of battery.
Description
Technical field
The present invention relates to area of solar cell, more particularly to a kind of backplate of p-type PERC double-sided solar batteries,
Correspondingly, the invention further relates to a kind of p-type PERC double-sided solar batteries.
Background technology
Solar cell power generation is that solar energy is converted into electric energy using solar cell, because it is green ring
Product is protected, environmental pollution will not be caused, and is renewable resource, so in the case of current energy shortage, solar-electricity
Pond is a kind of novel energy for having a broad based growth future.
Solar battery sheet is during electric energy is converted light energy into, and its internal photo-generated carrier produced needs to pass through
The electrode of outside printing is collected and drawn, and is then connected with external circuit, so that electric current be transported out.Above-mentioned silk-screen printing
Process is further subdivided into the silver-colored main grid printing of the back of the body, the secondary grid printing of back of the body silver and positive electrode printing of solar cell.Positive electrode is starched
Material and back electrode slurry are printed on crystal silicon solar battery on the front and back, through oversintering, play a part of collected current.It is existing
Technology in, backplate is made up of silver-colored main grid and Al-BSF, back electrode directly and P-type silicon contacts.But it is two-sided for PERC
During solar cell, the passivating film due to PERC double-side cells overleaf provided with insulation is difficult to reality using existing backplate
Now transmit the purpose of electric current, it is therefore desirable to a kind of new backplate is provided and is applicable to PERC double-sided solar batteries.
The content of the invention
The technical problems to be solved by the invention are there is provided a kind of backplate of p-type PERC double-sided solar batteries,
Electric current export ability is strong, simple in construction, easy industrialization, while improving the photoelectric transformation efficiency of battery.
The technical problems to be solved by the invention are, there is provided a kind of p-type PERC double-sided solar batteries, two-sided to absorb
Sunshine, electric current export ability is strong, simple in construction, easy industrialization, while the photoelectric transformation efficiency of component is improved,
In order to solve the above-mentioned technical problem, include the invention provides a kind of backplate of p-type PERC double-sided solar batteries
The alum gate line that at least 2 silver-colored main grids of the back of the body being parallel to each other and 25-500 bars are parallel to each other, the alum gate line is vertical with the silver-colored main grid of the back of the body
Connection；
The alum gate line is connected by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and the silver-colored main grid of the back of the body passes through in silicon
The silver-colored slotted zones of the back of the body that the piece back side is opened up are connected with P-type silicon；
Provided with least one set of along the silver-colored slotted unit of the spaced back of the body of the silver-colored main grid bearing of trend of the back of the body in the silver-colored slotted zones of the back of the body.
As the optimal technical scheme of the backplate of the p-type PERC double-sided solar batteries, the silver-colored slotted zones of the back of the body
It is interior provided with least two groups along the silver-colored slotted units of the spaced back of the body of the silver-colored main grid bearing of trends of the back of the body, slotted unit is parallel sets for each group back of the body silver
Put.
It is single with group back of the body silver fluting as the optimal technical scheme of the backplate of the p-type PERC double-sided solar batteries
The pattern of member is circle, ellipse, triangle, quadrangle, pentagon, hexagon, cross and one kind in star or combination.
As the optimal technical scheme of the backplate of the p-type PERC double-sided solar batteries, alum gate slotted zones and aluminium
Grid line is in the same direction or vertical.
As the optimal technical scheme of the backplate of the p-type PERC double-sided solar batteries, two neighboring back of the body silver is opened
Spacing between groove unit is equal, and spacing is 10-4880 μm.
As the optimal technical scheme of the backplate of the p-type PERC double-sided solar batteries, two neighboring back of the body silver is opened
Spacing between groove unit is unequal, and spacing is 10-4880 μm.
As the optimal technical scheme of the backplate of the p-type PERC double-sided solar batteries, the back of the body silver fluting is single
The width of member is 10-5000 μm；The width of the silver-colored main grid of the back of the body is 0.5-5mm.
As the optimal technical scheme of the backplate of the p-type PERC double-sided solar batteries, the silver-colored main grid of the back of the body
Bar number is 2-8 bars.
Correspondingly, the present invention also provides a kind of p-type PERC double-sided solar batteries, including the backplate, back side nitrogen
SiClx film, backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode；The backplate, the back side
Silicon nitride film, backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode are stacked gradually from bottom to up
Connection；
The backplate includes the alum gate line that at least 2 silver-colored main grids of the back of the body being parallel to each other and 25-500 bars are parallel to each other, described
Main grid is vertical is connected with back of the body silver for alum gate line；
The alum gate line is connected by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and the silver-colored main grid of the back of the body passes through in silicon
The silver-colored slotted zones of the back of the body that the piece back side is opened up are connected with P-type silicon；
Provided with least one set of along the silver-colored slotted unit of the spaced back of the body of the silver-colored main grid bearing of trend of the back of the body in the silver-colored slotted zones of the back of the body.
Correspondingly, the present invention also provides a kind of p-type PERC double-sided solar batteries, including the backplate, back side nitrogen
SiClx film, backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode；The backplate, the back side
Silicon nitride film, backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode are stacked gradually from bottom to up
Connection；
The backplate includes the alum gate line that at least 2 silver-colored main grids of the back of the body being parallel to each other and 25-500 bars are parallel to each other, described
Main grid is vertical is connected with back of the body silver for alum gate line；
The alum gate line is connected by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and alum gate slotted zones are hung down with alum gate line
Directly, the silver-colored main grid of the back of the body is connected by the silver-colored slotted zones of the back of the body opened up in silicon chip back side with P-type silicon；
Provided with least one set of along the silver-colored slotted unit of the spaced back of the body of the silver-colored main grid bearing of trend of the back of the body in the silver-colored slotted zones of the back of the body.
Implement the embodiment of the present invention, have the advantages that：
The backplate of p-type PERC double-sided solar batteries of the present invention, can both substitute existing one side solar cell knot
The effect of full aluminum back electric field, the also function with current－carrying conductor in structure, it is adaptable to be installed in p-type PERC double-sided solar batteries
The back side is used as backplate.Alum gate line and the silver-colored main grid of the back of the body are all connected by slotted zones with P-type silicon, the electric current export energy of backplate
Power is further lifted.Simple in construction, the easy industrialization of backplate, while improving the photoelectric transformation efficiency of battery.Using this
The consumption of silver paste and aluminium paste can be saved by inventing the p-type PERC double-sided solar batteries of the backplate, reduce production cost, and
And two-sided absorption luminous energy is realized, it is significantly expanded the application of solar cell and improves photoelectric transformation efficiency.
Brief description of the drawings
Fig. 1 is a kind of structural representation of p-type PERC double-sided solar battery backplates of the invention；
Fig. 2 is a kind of structural representation in the lbg area of p-type PERC double-sided solar battery backplates of the invention；
Fig. 3 is a kind of another structural representation in the lbg area of p-type PERC double-sided solar battery backplates of the invention；
Fig. 4 is a kind of structural representation of p-type PERC double-sided solar batteries of the invention；
Fig. 5 is the structural representation of another p-type PERC double-sided solar batteries of the invention；
Fig. 6 is the structural representation of a kind of p-type PERC double-sided solar batteries backplates of Fig. 5 and lbg area.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with accompanying drawing
It is described in detail on step ground.
In recent years, with the further investigation of scientist and technical staff, it was found that a kind of PERC solar energy of passivating back
Battery can further improve the photoelectric transformation efficiency of battery.But the pellumina of cell backside and silicon nitride film are all insulation
Film, it is impossible to transfer out electronics to come., therefore conventional way is slotted on the passivating film below grid line, and during printing grid line, silver
Slurry can be filled into slotted zones forms Ohmic contact with P-type silicon, so as to realize conducting function.
Existing PERC one sides solar cell is covered in the whole back of the body of silicon chip provided with full aluminum back electric field at the back side of battery
Face, the effect of full aluminum back electric field is to improve open-circuit voltage Voc and short circuit current flow Jsc, forces minority carrier away from surface, few
Number Carrier recombination rate reduction, so as to improve battery efficiency on the whole.However, because full aluminum back electric field is light tight, therefore, having
The rear surface of solar cell of full aluminum back electric field can not absorb luminous energy, positive can only absorb luminous energy, its photoelectric transformation efficiency is difficult to greatly
The raising of amplitude.
Therefore, the present invention proposes a kind of new backplate, it can both substitute complete in existing one side solar battery structure
The effect of aluminum back electric field, the also function with current－carrying conductor, it is adaptable to make at the back side for being installed in p-type PERC double-sided solar batteries
For backplate.
As Figure 1-4, the present invention provides a kind of backplate of p-type PERC double-sided solar batteries, including at least 2
The alum gate line 2 that the silver-colored main grid 1 of the back of the body and 25-500 bars being parallel to each other are parallel to each other, the alum gate line 2 and the back of the body be silver-colored, and main grid 1 is vertical connects
Connect；
The alum gate line 2 is connected by the alum gate slotted zones 9 opened up in silicon chip back side with P-type silicon 5, and the silver-colored main grid 1 of the back of the body passes through
The silver-colored slotted zones 10 of the back of the body opened up in silicon chip back side are connected with P-type silicon 5；
Provided with least one set of along the silver-colored slotted unit of the spaced back of the body of the silver-colored bearing of trend of main grid 1 of the back of the body in the silver-colored slotted zones 10 of the back of the body
11。
Backplate of the present invention sets the back side of silicon chip, and in order to suitable for double-sided solar battery, realize the back side
Sunshine can be absorbed, full aluminum back electric field is no longer set, but is changed to set the alum gate line 2 of many bars, using lbg technology
Lbg area overleaf is opened up in silicon nitride film 3 and backside oxide aluminium film 4, lbg divides into the silver-colored slotted zones 10 of the back of the body and aluminium
Grid slotted zones 9, back silver paste is printed on the silver-colored slotted zones 10 of the back of the body, and the silver-colored main grid 1 of the back of the body formed after sintering is by carrying on the back silver-colored slotted zones 10
It is connected with P-type silicon 5；Aluminium paste is printed on the alum gate line 2 formed after alum gate slotted zones 9, sintering and passes through alum gate slotted zones 9 and P-type silicon 5
Connection.The silver-colored main grid 1 of the back of the body intersected with alum gate line 2 collects the electronics on alum gate line 2 and the electricity come is directly transferred out from P-type silicon
Son, so that the current output capability of whole backplate gets a promotion.
Alum gate line 2 replaces full aluminum back electric field to play raising open-circuit voltage Voc and short circuit current flow Jsc, reduces minority carrier
Sub- recombination rate, improves the effect of cell photoelectric conversion efficiency；The dense distribution of 25-500 bar alum gates line 2 passes through alum gate on silicon chip
Slotted zones 9 and the formation localized contact of P-type silicon 5, in time can come out the electron transport of silicon chip everywhere；And alum gate line 2 is not
The back side of silicon chip is covered comprehensively, and sunshine can be projected in silicon chip from the sensitive area between alum gate line 2, so as to realize silicon chip back side
Luminous energy is absorbed, the photoelectric transformation efficiency of battery is greatly improved.
It should be noted that alum gate slotted zones 9 can set or be vertically arranged in the same direction with alum gate line 2.
Preferably, the radical of the alum gate line 2 is 30-350 bars, more preferably, and the radical of the alum gate line 2 is 50-300
Bar.
In general, the width of alum gate line 2 is 30-500 μm, and the width of alum gate slotted zones 9 is smaller, therefore for the back side
Silicon nitride film 3 and the damage area of backside oxide aluminium film 4 are small, and degree of injury is low.But, the width of the silver-colored main grid 1 of the back of the body reaches 0.5-
5mm, is far wider than the width of alum gate line 2, the silver-colored area of slotted zones 10 of the back of the body, which crosses senior general, causes the passivation area at the back side to reduce, it is impossible to maximum
The compound of the few son in the back side is reduced to degree, the lifting of photoelectric transformation efficiency is restricted, the silver-colored area of slotted zones 10 of the back of the body is too small, can cause again
The back of the body silver electrode paste contacted with P-type silicon is less, influences the output of electric current.
Therefore, the present inventor passes through multiple contrast experiment, to the silver-colored gross area of slotted unit 11 of the back of the body in the silver-colored slotted zones 10 of the back of the body
It is designed with arrangement, provided with least one set of along the spaced back of the body of the silver-colored bearing of trend of main grid 1 of the back of the body in the silver-colored slotted zones 10 of the back of the body
Silver-colored slotted unit 11.
When in the silver-colored slotted zones 10 of the back of the body provided with one group along the silver-colored slotted unit of the spaced back of the body of the silver-colored bearing of trend of main grid 1 of the back of the body
When 11, the pattern of the silver-colored slotted unit 11 of the back of the body is circle, ellipse, triangle, quadrangle, pentagon, hexagon, cross and star
One kind or combination in shape.
Wherein, the width of the silver-colored slotted unit 11 of the back of the body is 10-5000 μm, it is preferable that the silver-colored slotted unit 11 of the back of the body
Width is 200-5000 μm.
When being provided with the silver-colored slotted zones 10 of the back of the body, at least two groups spaced back ofs the body of the silver-colored bearing of trend of main grid 1 of the edge back of the body are silver-colored to slot
During unit 11, the silver-colored slotted unit 11 of each group back of the body be arranged in parallel.
As shown in Fig. 2 the pattern with the silver-colored slotted unit 11 of the group back of the body is circle, ellipse, triangle, quadrangle, pentagon,
One kind or combination in hexagon, cross and star.The silver-colored slotted unit 11 of same group of the back of the body can be with alignment, or
It is staggered.The arrangement of the silver-colored slotted unit 11 of the back of the body of difference group be able to can also be differed with identical.The different group back ofs the body shown in Fig. 2
Silver-colored slotted unit 11 is alignment, can also be as shown in figure 3, the different silver-colored slotted units 11 of the group back of the body are staggered.
The width of the silver-colored slotted unit 11 of the back of the body is 10-4880 μm, it is preferable that the width of the silver-colored slotted unit 11 of the back of the body is
10-2450μm。
It is be arranged in parallel between the silver-colored slotted unit 11 of the back of the body, the spacing between the two neighboring silver-colored slotted unit 11 of the back of the body is equal, spacing
For 10-4880 μm；Spacing between the two neighboring silver-colored slotted unit 11 of the back of the body can also be unequal, and spacing is 10-4880 μm, wherein
One preferable example is that spacing is big between the silver-colored slotted unit 11 of the middle back of the body, and such as spacing is 800 μm, and positioned at both sides
Spacing is small between the silver-colored slotted unit 11 of the back of the body, and such as spacing is 200 μm.
It should be noted that the width of the silver-colored main grid 1 of the back of the body is more than the width of the silver-colored slotted zones 10 of the back of the body, it is ensured that the silver-colored slotted zones of the back of the body
Back silver paste is filled up in 10 so that the silver-colored main grid 1 of the back of the body forms good Ohmic contact with P-type silicon 5.
When the bar number of the silver-colored main grid 1 of the back of the body is provided with 2-8 bars, cell photoelectric conversion performance reaches optimal.
To sum up, using backplate of the present invention, alum gate line 2 and the silver-colored main grid 1 of the back of the body are all connected by slotted zones with P-type silicon 5
Connect, the electric current export ability of backplate is further lifted.And to can be applied to p-type PERC two-sided for above-mentioned backplate of the invention
Solar cell, realizes two-sided absorption luminous energy, is significantly expanded the application of solar cell and improves photoelectric transformation efficiency.
Correspondingly, as shown in figure 4, the present invention also provides a kind of p-type PERC double-sided solar batteries, including back side electricity
Pole, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type emitter stage 6, front side silicon nitride film 7 and positive silver electrode 8；Institute
State backplate, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type emitter stage 6, front side silicon nitride film 7 and positive silver
Electrode 8 stacks gradually connection from bottom to up.
The backplate includes the alum gate line that at least 2 silver-colored main grids 1 of the back of the body being parallel to each other and 25-500 bars are parallel to each other
2, main grid 1 is vertical is connected with back of the body silver for the alum gate line 2；
The alum gate line 2 is connected by the alum gate slotted zones 9 opened up in silicon chip back side with P-type silicon 5, alum gate slotted zones 9 and alum gate
In the same direction, the silver-colored main grid 1 of the back of the body is connected line 2 by the silver-colored slotted zones 10 of the back of the body opened up in silicon chip back side with P-type silicon 5；
Provided with least one set of along the silver-colored slotted unit of the spaced back of the body of the silver-colored bearing of trend of main grid 1 of the back of the body in the silver-colored slotted zones 10 of the back of the body
11。
Correspondingly, as shown in figure 5, the present invention also provides a kind of p-type PERC double-sided solar batteries, including back side electricity
Pole, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type emitter stage 6, front side silicon nitride film 7 and positive silver electrode 8；Institute
State backplate, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type emitter stage 6, front side silicon nitride film 7 and positive silver
Electrode 8 stacks gradually connection from bottom to up.
Such as Fig. 6, the backplate is parallel to each other including at least 2 silver-colored main grids 1 of the back of the body being parallel to each other and 25-500 bars
Alum gate line 2, main grid 1 is vertical is connected with back of the body silver for the alum gate line 2；
The alum gate line 2 is connected by the alum gate slotted zones 9 opened up in silicon chip back side with P-type silicon 5, alum gate slotted zones 9 and alum gate
Line 2 is vertical, and the silver-colored main grid 1 of the back of the body is connected by the silver-colored slotted zones 10 of the back of the body opened up in silicon chip back side with P-type silicon 5；
Provided with least one set of along the silver-colored slotted unit of the spaced back of the body of the silver-colored bearing of trend of main grid 1 of the back of the body in the silver-colored slotted zones 10 of the back of the body
11。
It should be noted that Fig. 4 and Fig. 5 do not show that the silver-colored slotted zones 10 of the back of the body, and the quantity of alum gate line 2 is excessive, it is difficult in figure
In draw one by one, only with wherein several as representing in Fig. 4 and Fig. 5.
The backplate of existing one side solar cell is made up of silver-colored main grid and Al-BSF, with existing one side solar cell
Compare, p-type PERC double-sided solar batteries of the present invention are using the silver-colored main grid 1 of some back ofs the body and a plurality of alum gate line be arrangeding in parallel
2 compositions, alum gate line 2 not only substitutes full aluminum back electric field in existing one side solar cell and realizes back side extinction, is additionally operable to carry on the back silver-colored electricity
Secondary grid structure in extremely is used as current－carrying conductor to conduct electronics.
Moreover, alum gate line 2 and the silver-colored main grid 1 of the back of the body are all connected by slotted zones with P-type silicon 5, the electric current export energy of backplate
Power is further lifted.
Finally, using p-type PERC double-sided solar batteries made from backplate of the present invention, silver paste and aluminium can be saved
The consumption of slurry, reduces production cost, and realizes two-sided absorption luminous energy, is significantly expanded application and the raising of solar cell
Photoelectric transformation efficiency.
It should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than to the scope of the present invention
Limitation, although being explained in detail with reference to preferred embodiment to the present invention, it will be understood by those within the art that, can
To be modified to technical scheme or equivalent substitution, without departing from the spirit and scope of technical solution of the present invention.
Claims (10)
1. a kind of backplate of p-type PERC double-sided solar batteries, it is characterised in that including at least 2 back ofs the body being parallel to each other
The alum gate line that silver-colored main grid and 25-500 bar is parallel to each other, main grid is vertical is connected with back of the body silver for the alum gate line；
The alum gate line is connected by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and the silver-colored main grid of the back of the body passes through in silicon
The silver-colored slotted zones of the back of the body that the piece back side is opened up are connected with P-type silicon；
Provided with least one set of along the silver-colored slotted unit of the spaced back of the body of the silver-colored main grid bearing of trend of the back of the body in the silver-colored slotted zones of the back of the body.
2. the backplate of p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the back of the body silver fluting
Provided with least two groups along the silver-colored slotted unit of the spaced back of the body of the silver-colored main grid bearing of trend of the back of the body in area, the silver-colored slotted unit of each group back of the body is parallel
Set.
3. the backplate of p-type PERC double-sided solar batteries as claimed in claim 1 or 2, it is characterised in that opened with group back of the body silver
The pattern of groove unit be circle, ellipse, triangle, quadrangle, pentagon, hexagon, cross and one kind in star or
Combination.
4. the backplate of p-type PERC double-sided solar batteries as claimed in claim 1 or 2, it is characterised in that alum gate slotted zones
It is in the same direction or vertical with alum gate line.
5. the backplate of p-type PERC double-sided solar batteries as claimed in claim 2, it is characterised in that two neighboring back of the body silver
Spacing between slotted unit is equal, and spacing is 10-4880 μm.
6. the backplate of p-type PERC double-sided solar batteries as claimed in claim 2, it is characterised in that two neighboring back of the body silver
Spacing between slotted unit is unequal, and spacing is 10-4880 μm.
7. the backplate of p-type PERC double-sided solar batteries as claimed in claim 1 or 2, it is characterised in that the back of the body silver is opened
The width of groove unit is 10-5000 μm；The width of the silver-colored main grid of the back of the body is 0.5-5mm.
8. the backplate of p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the silver-colored main grid of the back of the body
Bar number be 2-8 bars.
9. a kind of p-type PERC double-sided solar batteries, it is characterised in that including the backplate, back side silicon nitride, the back side
Pellumina, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode；The backplate, back side silicon nitride, the back of the body
Face pellumina, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode stack gradually connection from bottom to up；
The backplate includes the alum gate line that at least 2 silver-colored main grids of the back of the body being parallel to each other and 25-500 bars are parallel to each other, described
Main grid is vertical is connected with back of the body silver for alum gate line；
The alum gate line is connected by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and alum gate slotted zones and alum gate line are same
To the silver-colored main grid of the back of the body is connected by the silver-colored slotted zones of the back of the body opened up in silicon chip back side with P-type silicon；
Provided with least one set of along the silver-colored slotted unit of the spaced back of the body of the silver-colored main grid bearing of trend of the back of the body in the silver-colored slotted zones of the back of the body.
10. a kind of p-type PERC double-sided solar batteries, it is characterised in that the backplate, back side silicon nitride, back side oxygen
Change aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode；The backplate, back side silicon nitride, the back side
Pellumina, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode stack gradually connection from bottom to up；
The backplate includes the alum gate line that at least 2 silver-colored main grids of the back of the body being parallel to each other and 25-500 bars are parallel to each other, described
Main grid is vertical is connected with back of the body silver for alum gate line；
The alum gate line is connected by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and alum gate slotted zones are hung down with alum gate line
Directly, the silver-colored main grid of the back of the body is connected by the silver-colored slotted zones of the back of the body opened up in silicon chip back side with P-type silicon；
Provided with least one set of along the silver-colored slotted unit of the spaced back of the body of the silver-colored main grid bearing of trend of the back of the body in the silver-colored slotted zones of the back of the body.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710124876.0A CN106981528B (en) | 2017-03-03 | 2017-03-03 | Back electrode of P-type PERC double-sided solar cell and cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710124876.0A CN106981528B (en) | 2017-03-03 | 2017-03-03 | Back electrode of P-type PERC double-sided solar cell and cell |
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| CN106981528B CN106981528B (en) | 2020-01-07 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110165010A (en) * | 2019-05-23 | 2019-08-23 | 江西展宇新能源股份有限公司 | A kind of two-sided PERC battery and preparation method thereof |
| CN111180535A (en) * | 2020-03-05 | 2020-05-19 | 江西展宇新能科技有限公司 | Double-sided solar cell |
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| CN103489934A (en) * | 2013-09-25 | 2014-01-01 | 晶澳（扬州）太阳能科技有限公司 | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof |
| CN104576773A (en) * | 2013-10-15 | 2015-04-29 | 太阳世界工业美国有限公司 | Solar cell contact structure |
| CN206628489U (en) * | 2017-03-03 | 2017-11-10 | 浙江爱旭太阳能科技有限公司 | The backplate and battery of p-type PERC double-sided solar batteries |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103489934A (en) * | 2013-09-25 | 2014-01-01 | 晶澳（扬州）太阳能科技有限公司 | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof |
| CN104576773A (en) * | 2013-10-15 | 2015-04-29 | 太阳世界工业美国有限公司 | Solar cell contact structure |
| CN206628489U (en) * | 2017-03-03 | 2017-11-10 | 浙江爱旭太阳能科技有限公司 | The backplate and battery of p-type PERC double-sided solar batteries |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110165010A (en) * | 2019-05-23 | 2019-08-23 | 江西展宇新能源股份有限公司 | A kind of two-sided PERC battery and preparation method thereof |
| CN111180535A (en) * | 2020-03-05 | 2020-05-19 | 江西展宇新能科技有限公司 | Double-sided solar cell |
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| CN106981528B (en) | 2020-01-07 |
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