CN107039545B - The rear electrode and battery of p-type PERC double-sided solar battery - Google Patents
The rear electrode and battery of p-type PERC double-sided solar battery Download PDFInfo
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- CN107039545B CN107039545B CN201710124874.1A CN201710124874A CN107039545B CN 107039545 B CN107039545 B CN 107039545B CN 201710124874 A CN201710124874 A CN 201710124874A CN 107039545 B CN107039545 B CN 107039545B
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 50
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- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 50
- 229940037003 alum Drugs 0.000 claims abstract description 80
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 71
- 239000010703 silicon Substances 0.000 claims abstract description 71
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 50
- 239000004332 silver Substances 0.000 claims abstract description 50
- 229910052709 silver Inorganic materials 0.000 claims abstract description 50
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 25
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 22
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 22
- 239000004411 aluminium Substances 0.000 claims description 16
- 239000004744 fabric Substances 0.000 claims 2
- 238000006243 chemical reaction Methods 0.000 abstract description 13
- 230000005684 electric field Effects 0.000 description 9
- 230000005611 electricity Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000011267 electrode slurry Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
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Abstract
The invention discloses a kind of rear electrode of p-type PERC double-sided solar battery, the alum gate line that the silver-colored main grid of the back being parallel to each other including at least 2 and 25-500 item are parallel to each other, the alum gate line and back be silver-colored, and main grid is vertical connect；The alum gate line is connect by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and the silver-colored main grid of the back is connect by the back silver slotted zones opened up in silicon chip back side with P-type silicon；The silver-colored main grid of every back is set as discontinuous segmental structure, and the silver-colored main grid of every section of back is correspondingly arranged the silver-colored slotted zones of a back；At least one carries on the back silver-colored slotted unit in the silver-colored slotted zones of the back, and carrying on the back silver-colored slotted unit pattern is rectangle.The invention also discloses a kind of p-type PERC double-sided solar batteries.Using the present invention, electric current export ability is strong, and structure is simple, is easy industrialization, while improving the photoelectric conversion efficiency of battery.
Description
Technical field
The present invention relates to area of solar cell more particularly to a kind of rear electrode of p-type PERC double-sided solar battery,
Correspondingly, the invention further relates to a kind of p-type PERC double-sided solar batteries.
Background technique
Solar cell power generation is that solar energy is converted into electric energy using solar battery, since it is green ring
Product is protected, environmental pollution will not be caused, and be renewable resource, so in the case of current energy shortage, solar-electricity
Pond is a kind of new energy for having broad based growth future.
During converting light energy into electric energy, the internal photo-generated carrier needs generated pass through solar battery sheet
The electrode of outside printing is collected and is drawn, and is then connect with external circuit, so that current transmission be come out.Above-mentioned silk-screen printing
Process is further subdivided into the back silver main grid printing of solar battery, the secondary grid printing of back silver and positive electrode printing.Positive electrode slurry
Material and back electrode slurry are printed on crystal silicon solar battery on the front and back, through oversintering, play the role of collected current.It is existing
Technology in, rear electrode is made of silver-colored main grid and Al-BSF, back electrode directly and P-type silicon contact, however be used for PERC it is two-sided
When solar battery, since PERC is overleaf equipped with the passivating film of insulation, transmission electricity is difficult to realize using existing rear electrode
The purpose of stream, it is therefore desirable to the new rear electrode of one kind be provided and be applicable to PERC double-sided solar battery.
Summary of the invention
Technical problem to be solved by the present invention lies in, a kind of rear electrode of p-type PERC double-sided solar battery is provided,
Electric current export ability is strong, and structure is simple, is easy industrialization, while improving the photoelectric conversion efficiency of battery.
Technical problem to be solved by the present invention lies in provide a kind of p-type PERC double-sided solar battery, two-sided can absorb
Sunlight, electric current export ability is strong, and structure is simple, is easy industrialization, while improving the photoelectric conversion efficiency of component.
In order to solve the above-mentioned technical problems, the present invention provides a kind of rear electrodes of p-type PERC double-sided solar battery
The alum gate line that the silver-colored main grid of the back being parallel to each other including at least 2 and 25-500 item are parallel to each other, the alum gate line and the silver-colored main grid of back
Vertical connection；
The alum gate line is connect by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and the silver-colored main grid of the back passes through
It is connect in the back silver slotted zones that silicon chip back side opens up with P-type silicon；
The silver-colored main grid of every back is set as discontinuous segmental structure, and the silver-colored main grid of every section of back is correspondingly arranged the silver-colored slotted zones of a back；
At least one carries on the back silver-colored slotted unit in the silver-colored slotted zones of the back, and carrying on the back silver-colored slotted unit pattern is rectangle.
The optimal technical scheme of rear electrode as the p-type PERC double-sided solar battery, the silver-colored slotted zones of the back
Interior at least two carry on the back silver-colored slotted unit, carry on the back and are arranged in parallel between silver-colored slotted unit.
The optimal technical scheme of rear electrode as the p-type PERC double-sided solar battery, two neighboring back silver are opened
Spacing between slot unit is equal, and spacing is 10-4880 μm.
The optimal technical scheme of rear electrode as the p-type PERC double-sided solar battery, two neighboring back silver are opened
Spacing between slot unit is unequal, and spacing is 10-4880 μm.
The optimal technical scheme of rear electrode as the p-type PERC double-sided solar battery, the back silver fluting are single
The width of member is 10-5000 μm.
The optimal technical scheme of rear electrode as the p-type PERC double-sided solar battery, the silver-colored main grid of back
Width is 0.5-5mm.
The optimal technical scheme of rear electrode as the p-type PERC double-sided solar battery, the silver-colored main grid of back
Item number is 2-8 item.
The optimal technical scheme of rear electrode as the p-type PERC double-sided solar battery, the silver-colored main grid point of every back
At 2-20 sections, the spacing between adjacent two sections is 10-50mm.
Correspondingly, the present invention also provides a kind of p-type PERC double-sided solar battery, the p-type PERC double-sided solar electricity
Pond includes the rear electrode, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter, front side silicon nitride film and just
Silver electrode；The rear electrode, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter, front side silicon nitride film and
Positive silver electrode stacks gradually connection from bottom to up；
The rear electrode includes the alum gate line that the silver-colored main grid of at least 2 back being parallel to each other and 25-500 item are parallel to each other,
Main grid is vertical connect with back silver for the alum gate line；
The alum gate line is connect by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, alum gate slotted zones and alum gate
Line is in the same direction, and the silver-colored main grid of the back is connect by the back silver slotted zones opened up in silicon chip back side with P-type silicon；
The silver-colored main grid of every back is set as discontinuous segmental structure, and the silver-colored main grid of every section of back is correspondingly arranged the silver-colored slotted zones of a back；
At least one carries on the back silver-colored slotted unit in the silver-colored slotted zones of the back, and carrying on the back silver-colored slotted unit pattern is rectangle.
Correspondingly, the present invention also provides a kind of p-type PERC double-sided solar batteries, which is characterized in that the p-type PERC is bis-
Face solar battery includes the rear electrode, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter, front nitrogen
SiClx film and positive silver electrode；The rear electrode, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter, front
Silicon nitride film and positive silver electrode stack gradually connection from bottom to up；
The rear electrode includes the alum gate line that the silver-colored main grid of at least 2 back being parallel to each other and 25-500 item are parallel to each other,
Main grid is vertical connect with back silver for the alum gate line；
The alum gate line is connect by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, alum gate slotted zones and alum gate
Line is vertical, and the silver-colored main grid of the back is connect by the back silver slotted zones opened up in silicon chip back side with P-type silicon；
The silver-colored main grid of every back is set as discontinuous segmental structure, and the silver-colored main grid of every section of back is correspondingly arranged the silver-colored slotted zones of a back；
At least one carries on the back silver-colored slotted unit in the silver-colored slotted zones of the back, and carrying on the back silver-colored slotted unit pattern is rectangle.
The implementation of the embodiments of the present invention has the following beneficial effects:
The rear electrode of p-type PERC double-sided solar battery of the present invention can both substitute existing single side solar-electricity
The effect of full aluminum back electric field, also has the function of current-carrying conductor in pool structure, suitable for being installed in p-type PERC double-sided solar electricity
The back side in pond is as rear electrode.Alum gate line and the silver-colored main grid of back all pass through slotted zones and connect with P-type silicon, and the electric current of rear electrode is led
Output capacity is further promoted.The structure of rear electrode is simple, is easy industrialization, while improving the photoelectric conversion efficiency of battery.It adopts
The dosage of silver paste and aluminium paste can be saved with the p-type PERC double-sided solar battery of rear electrode of the present invention, reduction is produced into
This, and realize two-sided absorption luminous energy, be significantly expanded the application range of solar battery and improve photoelectric conversion efficiency.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of p-type PERC double-sided solar battery rear electrode of the present invention；
Fig. 2 is a kind of structural schematic diagram in the laser slotting area of p-type PERC double-sided solar battery rear electrode of the present invention；
Fig. 3 is that a kind of another structure in the laser slotting area of p-type PERC double-sided solar battery rear electrode of the present invention is shown
It is intended to；
Fig. 4 is a kind of structural schematic diagram of p-type PERC double-sided solar battery of the present invention；
Fig. 5 is the structural schematic diagram of another p-type PERC double-sided solar battery of the invention；
Fig. 6 is a kind of structural schematic diagram in the laser slotting area of p-type PERC double-sided solar battery rear electrode of Fig. 5.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with attached drawing
Step ground detailed description.
In recent years, with the further investigation of scientist and technical staff, it was found that a kind of PERC solar energy of passivating back
Battery can further improve the photoelectric conversion efficiency of battery.However the pellumina of cell backside and silicon nitride film are all insulation
Electronics cannot be transferred out and by film, therefore conventional way is the passivating film fluting below grid line, when printing grid line, silver paste
It can be filled into slotted zones and form Ohmic contact with P-type silicon, to realize conducting function.
Existing PERC single side solar battery is equipped with the entire back that full aluminum back electric field is covered on silicon wafer at the back side of battery
Face, the effect of full aluminum back electric field are to improve open-circuit voltage Voc and short circuit current Jsc, force minority carrier far from surface, few
Number Carrier recombination rate reduces, to improve battery efficiency on the whole.However, since full aluminum back electric field is opaque, have
The rear surface of solar cell of full aluminum back electric field can not absorb luminous energy, positive can only absorb luminous energy, photoelectric conversion efficiency is difficult to greatly
The raising of amplitude.
For this purpose, the present invention proposes a kind of new rear electrode, can both substitute complete in existing single side solar battery structure
The effect of aluminum back electric field, also has the function of current-carrying conductor, and the back side suitable for being installed in p-type PERC double-sided solar battery is made
For rear electrode.
As shown in Figure 1-3, the present invention provides a kind of rear electrode of p-type PERC double-sided solar battery, including at least 2
The alum gate line 2 that the silver-colored main grid 1 of back and 25-500 item being parallel to each other are parallel to each other, the alum gate line 2 and back be silver-colored, and main grid 1 is vertical connects
It connects；
The alum gate line 2 is connect by the alum gate slotted zones 9 opened up in silicon chip back side with P-type silicon 5, the silver-colored main grid 1 of the back
It is connect by the back silver slotted zones 10 opened up in silicon chip back side with P-type silicon 5；
The silver-colored main grid 1 of every back is set as discontinuous segmental structure, and the silver-colored main grid 1 of every section of back is correspondingly arranged the silver-colored slotted zones of a back
10；
At least one carries on the back silver-colored slotted unit 11 in the silver-colored slotted zones 10 of the back, and carrying on the back silver-colored 11 pattern of slotted unit is rectangle.
The back side of rear electrode setting silicon wafer of the present invention, and in order to be suitable for double-sided solar battery, realize the back side
Sunlight can be absorbed, full aluminum back electric field is no longer set, but is changed to that the alum gate line 2 of many items is arranged, using laser slotting technology
Laser slotting area overleaf is opened up in silicon nitride film 3 and backside oxide aluminium film 4, laser slotting divides into the silver-colored slotted zones 10 of back and aluminium
Grid slotted zones 9, back silver paste are printed on the silver-colored slotted zones 10 of back, and the back silver main grid 1 formed after sintering is by carrying on the back silver-colored slotted zones 10
It is connect with P-type silicon 5；Aluminium paste is printed on alum gate slotted zones 9, and the alum gate line 2 formed after sintering passes through alum gate slotted zones 9 and P-type silicon 5
Connection.The silver-colored main grid 1 of the back intersected with alum gate line 2 collects the electronics on alum gate line 2 and directly transfers out the electricity come from P-type silicon
Son, so that the current output capability of entire rear electrode be made to get a promotion.
Alum gate line 2 replaces full aluminum back electric field that can play raising open-circuit voltage Voc and short circuit current Jsc, reduces minority carrier
Sub- recombination rate improves the effect of cell photoelectric transfer efficiency；25-500 2 dense distribution of alum gate line passes through alum gate on silicon wafer
Slotted zones 9 and P-type silicon 5 form localized contact, can in time come out the electron transport of silicon wafer everywhere；And alum gate line 2 is not
The back side of silicon wafer is covered comprehensively, and sunlight can be projected in silicon wafer from the sensitive area between alum gate line 2, to realize silicon chip back side
Luminous energy is absorbed, the photoelectric conversion efficiency of battery is greatly improved.
Preferably, the radical of the alum gate line 2 is 30-350 item, and more preferably, the radical of the alum gate line 2 is 50-300
Item.
In general, the width of alum gate line 2 is 30-500 μm, and the width of alum gate slotted zones 9 is smaller, therefore for the back side
Silicon nitride film 3 and the damage area of backside oxide aluminium film 4 are small, and degree of injury is low.But the width for carrying on the back silver-colored main grid 1 reaches 0.5-
5mm is far wider than the width of alum gate line 2, carries on the back for example excessive passivation area that will lead to the back side of 10 area of silver-colored slotted zones and reduces, cannot be most
The compound of the few son in the back side is reduced to big degree, the promotion of photoelectric conversion efficiency is restricted, it is too small to carry on the back 10 area of silver-colored slotted zones, and can lead
It causes the back silver electrode paste contacted with P-type silicon less, influences the output of electric current.
For this purpose, the present inventor passes through multiple comparative experiments, to 11 gross area of back silver slotted unit carried on the back in silver-colored slotted zones 10
It is designed with arrangement, is equipped at least one in the silver-colored slotted zones 10 of the back and carries on the back silver-colored slotted unit 11, carry on the back 11 figure of silver-colored slotted unit
Case is rectangle.
When being equipped with a back silver slotted unit 11 in the silver-colored slotted zones 10 of the back, as shown in Fig. 2, carrying on the back silver-colored slotted unit 11
Set on carrying on the back among silver-colored slotted zones 10, the width for carrying on the back silver-colored slotted unit 11 is 10-5000 μm, it is preferable that the back silver fluting
The width of unit 11 is 200-5000 μm.The length for carrying on the back silver-colored slotted unit 11 is identical as the back silver length of main grid 1, can also be with
It is to carry on the back silver-colored slotted unit 11 than carrying on the back silver-colored 1 short 5-5000 μm of main grid, is also possible to carry on the back silver-colored slotted unit 11 5- longer than back silver main grid 1
5000μm。
When being equipped with more than two back silver slotted units 11 in the silver-colored slotted zones 10 of the back, as shown in figure 3, back silver fluting list
First 11 extending directions are consistent with the silver-colored extending direction of main grid 1 is carried on the back, and the width for carrying on the back silver-colored slotted unit 11 is 10-4880 μm, excellent
Selection of land, the width for carrying on the back silver-colored slotted unit 11 is 10-2450 μm.The length for carrying on the back silver-colored slotted unit 11 and the silver-colored main grid 1 of back
Length it is identical, be also possible to carry on the back silver-colored slotted unit 11 than carrying on the back silver-colored 1 short 5-5000 μm of main grid, be also possible to carry on the back silver-colored slotted unit 11
Than carrying on the back silver-colored 1 long 5-5000 μm of main grid.
It carries on the back and is arranged in parallel between silver-colored slotted unit 11, the two neighboring spacing carried on the back between silver-colored slotted unit 11 is equal, spacing
It is 10-4880 μm；The two neighboring spacing carried on the back between silver-colored slotted unit 11 can also be unequal, and spacing is 10-4880 μm, wherein
One preferable example is big to be located in the middle spacing between the silver-colored slotted unit 11 of back, if spacing is 800 μm, and is located at both sides
It is small to carry on the back spacing between silver-colored slotted unit 11, if spacing is 200 μm.
It should be noted that the width for carrying on the back silver-colored main grid 1 is greater than the width for carrying on the back silver-colored slotted zones 10, it is ensured that carry on the back silver-colored slotted zones
Back silver paste is filled up in 10, forms good Ohmic contact with P-type silicon 5 so that carrying on the back silver-colored main grid 1.
When the item number for carrying on the back silver-colored main grid 1 is equipped with 2-8, cell photoelectric conversion performance reaches best.
The silver-colored main grid of back of the present invention is set as discontinuous segmental structure, and the silver-colored main grid 1 of every back is divided into 2-20 sections, adjacent two sections
Between spacing be 5-100mm.The silver-colored main grid 1 of every section of back is correspondingly arranged the silver-colored slotted zones 10 of a back, the different back on same straight line
The arrangement that silver-colored slotted unit 11 is carried on the back in silver-colored slotted zones 10 can be identical, can not also be identical.
The present invention carries on the back 1 structure of silver-colored main grid using noncontinuity segmented, can reduce the dosage of silver paste, reduces production cost.
By adjusting the pattern for the silver-colored slotted unit 11 of back for carrying on the back silver-colored slotted zones 10, spacing and size improve the export of rear electrode electric current
Ability, while laser slotting area is smaller, it is ensured that enough passivating back areas, to promote two-sided PERC solar battery
Photoelectric conversion efficiency.
To sum up, all connected by slotted zones and P-type silicon 5 using rear electrode of the present invention, alum gate line 2 and the silver-colored main grid 1 of back
It connects, the electric current export ability of rear electrode is further promoted.And to can be applied to p-type PERC two-sided for the above-mentioned rear electrode of the present invention
Solar battery realizes two-sided absorption luminous energy, is significantly expanded the application range of solar battery and improves photoelectric conversion efficiency.
Correspondingly, as shown in figure 4, the present invention also provides a kind of p-type PERC double-sided solar battery, including back side electricity
Pole, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type emitter 6, front side silicon nitride film 7 and positive silver electrode 8；Institute
State rear electrode, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type emitter 6, front side silicon nitride film 7 and positive silver
Electrode 8 stacks gradually connection from bottom to up.
The rear electrode includes at least 2 silver-colored main grids 1 of back being parallel to each other and the mutual alum gate line 2 of 25-500 item, institute
Stating alum gate line 2, main grid 1 is vertical connect with back silver；
The alum gate line 2 is connect by the alum gate slotted zones 9 opened up in silicon chip back side with P-type silicon 5, alum gate slotted zones 9 with
In the same direction, the silver-colored main grid 1 of the back is connect by the back silver slotted zones 10 opened up in silicon chip back side with P-type silicon 5 alum gate line 2；
The silver-colored main grid 1 of every back is set as discontinuous segmental structure, and the silver-colored main grid 1 of every section of back is correspondingly arranged the silver-colored slotted zones of a back
10；
At least one carries on the back silver-colored slotted unit 11 in the silver-colored slotted zones 10 of the back, and carrying on the back silver-colored 11 pattern of slotted unit is rectangle.
It should be noted that not showing that the silver-colored slotted zones 10 of back in figure, and 2 quantity of alum gate line is excessive, it is difficult to one in figure
One draws, in Fig. 4 only use wherein several as representative.
Correspondingly, as shown in figure 5, the present invention also provides a kind of p-type PERC double-sided solar battery, the p-type PERC is bis-
Face solar battery includes the rear electrode, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type emitter 6, just
Face silicon nitride film 7 and positive silver electrode 8；The rear electrode, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type hair
Emitter-base bandgap grading 6, front side silicon nitride film 7 and positive silver electrode 8 stack gradually connection from bottom to up.
Such as Fig. 6, the rear electrode includes the silver-colored main grids 1 of at least 2 back being parallel to each other and the mutual alum gate of 25-500 item
Line 2, main grid 1 is vertical connect with back silver for the alum gate line 2；
The alum gate line 2 is connect by the alum gate slotted zones 9 opened up in silicon chip back side with P-type silicon 5, alum gate slotted zones 9 with
Alum gate line 2 is vertical, and the silver-colored main grid 1 of the back is connect by the back silver slotted zones 10 opened up in silicon chip back side with P-type silicon 5；
The silver-colored main grid 1 of every back is set as discontinuous segmental structure, and the silver-colored main grid 1 of every section of back is correspondingly arranged the silver-colored slotted zones of a back
10；
At least one carries on the back silver-colored slotted unit 11 in the silver-colored slotted zones 10 of the back, and carrying on the back silver-colored 11 pattern of slotted unit is rectangle.
The rear electrode of existing single side solar battery is made of silver-colored main grid and Al-BSF, with existing single side solar battery
It compares, p-type PERC double-sided solar battery of the present invention is using the silver-colored main grid 1 of several back and a plurality of alum gate line disposed in parallel
2 compositions, alum gate line 2 not only substitute full aluminum back electric field in existing single side solar battery and realize back side extinction, are also used to carry on the back silver-colored electricity
Secondary grid structure in extremely is used as current-carrying conductor to conduct electronics.
Moreover, alum gate line 2 and the silver-colored main grid 1 of back are all connect by slotted zones with P-type silicon 5, the electric current of rear electrode exports energy
Power is further promoted.
Finally, silver paste and aluminium can be saved using p-type PERC double-sided solar battery made from rear electrode of the present invention
The dosage of slurry reduces production cost, and realizes two-sided absorption luminous energy, is significantly expanded the application range and raising of solar battery
Photoelectric conversion efficiency.
It should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than to the scope of the present invention
Limitation, although the invention is described in detail with reference to the preferred embodiments, those skilled in the art should understand that, can
With modification or equivalent replacement of the technical solution of the present invention are made, without departing from the spirit and scope of technical solution of the present invention.
Claims (6)
1. a kind of rear electrode of p-type PERC double-sided solar battery, which is characterized in that including at least 2 back being parallel to each other
The alum gate line that silver-colored main grid and 50-300 item are parallel to each other, main grid is vertical connect with back silver for the alum gate line；
The alum gate line is connect by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and 50-300 alum gate line intensively divides
Cloth forms localized contact on silicon wafer, through alum gate slotted zones and P-type silicon, in time comes out the electron transport of silicon wafer everywhere；
The silver-colored main grid of the back is connect by the back silver slotted zones opened up in silicon chip back side with P-type silicon；
The silver-colored main grid of every back is set as discontinuous segmental structure, and the silver-colored main grid of every section of back is correspondingly arranged the silver-colored slotted zones of a back；
At least two carry on the back silver-colored slotted unit in the silver-colored slotted zones of the back, and the silver-colored slotted unit pattern of the back is rectangle；Back silver is opened
Slot unit extending direction is consistent with the silver-colored extending direction of main grid is carried on the back, and is arranged in parallel between the silver-colored slotted unit of the back；
The width for carrying on the back silver-colored slotted unit is 10-5000 μm；The width for carrying on the back silver-colored main grid is 0.5-5mm；The alum gate line
Width be 30-500 μm, the width of the alum gate slotted zones is less than the width of alum gate line；
The alum gate slotted zones are vertical with alum gate line.
2. the rear electrode of p-type PERC double-sided solar battery as described in claim 1, which is characterized in that two neighboring back silver
Spacing between slotted unit is equal, and spacing is 10-4880 μm.
3. the rear electrode of p-type PERC double-sided solar battery as described in claim 1, which is characterized in that two neighboring back silver
Spacing between slotted unit is unequal, and spacing is 10-4880 μm.
4. the rear electrode of p-type PERC double-sided solar battery as described in claim 1, which is characterized in that the silver-colored main grid of the back
Item number be 2-8 item.
5. the rear electrode of p-type PERC double-sided solar battery as described in claim 1, which is characterized in that the silver-colored main grid of every back
It is divided into 2-20 sections, the spacing between adjacent two sections is 5-50mm.
6. a kind of p-type PERC double-sided solar battery, which is characterized in that the p-type PERC double-sided solar battery includes the back side
Electrode, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter, front side silicon nitride film and positive silver electrode；The back
Face electrode, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter, front side silicon nitride film and positive silver electrode from down toward
On stack gradually connection；
The rear electrode includes the alum gate line that the silver-colored main grid of at least 2 back being parallel to each other and 50-300 item are parallel to each other, described
Main grid is vertical connect with back silver for alum gate line；
The alum gate line is connect by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and 50-300 alum gate line intensively divides
Cloth forms localized contact on silicon wafer, through alum gate slotted zones and P-type silicon, in time comes out the electron transport of silicon wafer everywhere；
Alum gate slotted zones are vertical with alum gate line, and the silver-colored main grid of the back is connect by the back silver slotted zones opened up in silicon chip back side with P-type silicon；
The silver-colored main grid of every back is set as discontinuous segmental structure, and the silver-colored main grid of every section of back is correspondingly arranged the silver-colored slotted zones of a back；
At least two carry on the back silver-colored slotted unit in the silver-colored slotted zones of the back, and the silver-colored slotted unit pattern of the back is rectangle；Back silver is opened
Slot unit extending direction is consistent with the silver-colored extending direction of main grid is carried on the back, and is arranged in parallel between the silver-colored slotted unit of the back；The back silver
The width of slotted unit is 10-5000 μm；The width for carrying on the back silver-colored main grid is 0.5-5mm；The width of the alum gate line is 30-
500 μm, the width of the alum gate slotted zones is less than the width of alum gate line.
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| CN108538948A (en) * | 2018-06-14 | 2018-09-14 | 泰州隆基乐叶光伏科技有限公司 | Solar cell grid line structure, solar battery sheet and solar energy stacked wafer moudle |
| EP3817070B1 (en) * | 2019-10-31 | 2023-06-28 | CSEM Centre Suisse D'electronique Et De Microtechnique SA | Method of manufacturing a photovoltaic device |
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| CN103489934A (en) * | 2013-09-25 | 2014-01-01 | 晶澳（扬州）太阳能科技有限公司 | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof |
| CN104218102A (en) * | 2013-05-31 | 2014-12-17 | 茂迪股份有限公司 | Solar cell and module thereof |
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| CN105405901A (en) * | 2015-11-10 | 2016-03-16 | 苏州阿特斯阳光电力科技有限公司 | Local contact back passivation solar cell |
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| CN104218102A (en) * | 2013-05-31 | 2014-12-17 | 茂迪股份有限公司 | Solar cell and module thereof |
| CN103489934A (en) * | 2013-09-25 | 2014-01-01 | 晶澳（扬州）太阳能科技有限公司 | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof |
| CN104576773A (en) * | 2013-10-15 | 2015-04-29 | 太阳世界工业美国有限公司 | Solar cell contact structure |
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