CN105405901A - Local contact back passivation solar cell - Google Patents
Local contact back passivation solar cell Download PDFInfo
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- CN105405901A CN105405901A CN201510760515.6A CN201510760515A CN105405901A CN 105405901 A CN105405901 A CN 105405901A CN 201510760515 A CN201510760515 A CN 201510760515A CN 105405901 A CN105405901 A CN 105405901A
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- Prior art keywords
- contact
- contact zone
- solar cell
- layer
- metal layer
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- 238000002161 passivation Methods 0.000 title claims abstract description 48
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 38
- 239000010703 silicon Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 25
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052709 silver Inorganic materials 0.000 claims abstract description 14
- 239000004332 silver Substances 0.000 claims abstract description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims description 5
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical group [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 claims description 4
- HJELPJZFDFLHEY-UHFFFAOYSA-N silicide(1-) Chemical compound [Si-] HJELPJZFDFLHEY-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 6
- 238000002474 experimental method Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 208000001491 myopia Diseases 0.000 description 2
- 230000004379 myopia Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a local contact back passivation solar cell comprising a silicon substrate layer, a back passivation film which is arranged at the bottom surface of the silicon substrate layer, a back metal layer which covers the bottom surface of the back passivation film, multiple back silver electrodes which penetrate through the back passivation film and the back metal layer and are contacted with the bottom surface of the silicon substrate layer, multiple contact regions which penetrate through the back passivation film, and secondary gate electrodes which are arranged at the front surface of the silicon substrate layer and mutually parallel. The contact regions are line-segment-shaped and arranged into multiple rows which are mutually parallel. The contact regions of each row are mutually parallel and arranged in a spacing way. The contact regions in the adjacent rows are arranged in a staggered way. In the contact regions of each row, length of each contact region is 0.1-0.9mm, distance c between the two adjacent rows of contact regions is 0.5-1mm, and the total area of the contact regions is 1-3.5% of the back area of the silicon wafer. The experiment proves that photoelectric conversion efficiency is enhanced for 0.43-0.46% in comparison with the cells in the prior art so that an unexpected technical effect is achieved.
Description
Technical field
The present invention relates to a kind of localized contact back of the body passivation solar cell, belong to technical field of solar batteries.
Background technology
Conventional fossil fuel approach exhaustion day by day, in existing sustainable energy, solar energy is undoubtedly the most clean, the most general and most potential alternative energy source of one.Device of solar generating is also called solar cell or photovoltaic cell, solar energy can be directly changed into electric energy, and its electricity generating principle is the photovoltaic effect of based semiconductor PN junction.
Along with the development of science and technology, occurred localized contact back of the body passivation solar cell, this is a kind of high performance solar batteries out newly developed, obtains the extensive concern of industry.Its core covers at the shady face aluminium oxide of silicon chip or silicon oxide film (also known as backside passivation film, general thickness is 5 ~ 100 nanometers), to play passivated surface, improves the effect of long-wave response, thus promote the conversion efficiency of battery.But, aluminium oxide or silica non-conductive, therefore need this film local openings so that metal layer on back (as aluminum metal) contacts with silicon chip back surface, collected current.
At present, localized contact back of the body passivation solar cell mainly contains the circular port of angular distribution, continuous and two kinds, lines be parallel to each other for the contact pattern (namely metallize mode) of the back metal and silicon substrate that collect electric current.But these two kinds of metallization modes all also exist weak point separately: 1, circular port design easily produces cavity at contact area, increases contact resistance, can reduce battery efficiency; 2, lines cause the contact area of metal and silicon larger continuously, thus cause passivation area to reduce, and are unfavorable for passivation on the one hand, cause surface recombination more serious on the other hand, can reduce battery efficiency equally.
For the problems referred to above, Chinese utility model patent CN203932078U discloses a kind of back of the body passivation solar cell, comprise layer-of-substrate silicon, be formed at the emitter layer of layer-of-substrate silicon upper surface, be positioned at the anti-reflection rete of emitter layer upper surface, the multiple fronts silver electrode contacted in anti-reflection rete and with emitter layer upper surface, be positioned at the backside passivation film of layer-of-substrate silicon bottom surface, be covered in the metal layer on back of backside passivation film bottom surface, the multiple back silver electrodes contacted in backside passivation film and metal layer on back and with layer-of-substrate silicon bottom surface, run through multiple contact zones of backside passivation film, described contact zone upper surface contacts with layer-of-substrate silicon bottom surface, described contact zone is line segment shape and is arranged into the multirow be parallel to each other, contact zone often in row is parallel to each other and spaced apart, contact zone in adjacent lines is interspersed.Record in its dependent claims 8: the length of described contact zone is 1 ~ 5 millimeter, and width is 20 ~ 80 microns.
Therefore, the localized contact back of the body passivation solar cell developing high conversion efficiency is the research and development method of those skilled in the art all the time.
Summary of the invention
Goal of the invention of the present invention is to provide a kind of localized contact back of the body passivation solar cell.
To achieve the above object of the invention, the technical solution used in the present invention is: a kind of localized contact back of the body passivation solar cell, the multiple back silver electrodes comprise layer-of-substrate silicon, be arranged in the backside passivation film of layer-of-substrate silicon bottom surface, be covered in the metal layer on back of backside passivation film bottom surface, contacting through backside passivation film and metal layer on back and with layer-of-substrate silicon bottom surface, the multiple contact zones running through backside passivation film; And be positioned at the secondary gate electrode that layer-of-substrate silicon front is parallel to each other;
Described contact zone upper surface contacts with layer-of-substrate silicon bottom surface, and described contact zone is line segment shape and is arranged into the multirow be parallel to each other, and the contact zone often in row is parallel to each other and spaced apart, and the contact zone in adjacent lines is interspersed;
Often in row contact zone, the length of each contact zone is a, and the spacing between adjacent contact area is b; And a is 0.1 ~ 0.9mm; B is: 0.5a≤b≤3a;
Spacing c between two adjacent row contact zones is 0.5 ~ 1mm;
The gross area of described contact zone accounts for 1 ~ 3.5% of silicon chip back side area.
Preferably, the spacing between two adjacent row contact zones is all identical.
In technique scheme, the width of described contact zone is 20 ~ 80 microns.
In technique scheme, the bearing of trend of described contact zone parallels with the bearing of trend of the secondary gate electrode in front.
Preferably, the gross area of described contact zone accounts for 1.5 ~ 3% of silicon chip back side area.
In technique scheme, described contact zone contacts with metal layer on back or is embedded in metal layer on back.
In technique scheme, described metal layer on back is aluminium lamination, and described contact zone is silicon-aluminum contact zone.
Preferably, described metal layer on back is aluminium lamination, and the composition material of described contact zone is silver.
In technique scheme, described contact zone runs through described metal layer on back.
Be formed with back surface field layer between described backside passivation film and layer-of-substrate silicon, described back silver electrode contacts with back surface field layer bottom surface, and the upper surface of described contact zone contacts with back surface field layer bottom surface.
Because technique scheme is used, the present invention compared with prior art has following advantages:
1, this invention exploits a kind of new localized contact back of the body passivation solar battery structure, accounting for the ratio of silicon chip back side area by strictly controlling spacing between spacing in the length of each contact zone, row between adjacent contact area, adjacent rows contact zone and the contact zone gross area, finally obtaining the solar cell that performance is more superior; Experiment proves: compared with prior art, the present invention obviously can reduce sial hole ratio, and open circuit voltage improves 0.002 ~ 0.004V, and short circuit current improves 0.08 ~ 0.12A, electricity conversion improves 0.43 ~ 0.46%, achieves beyond thought technique effect;
2, the present invention is by perpendicular for the bearing of trend of the bearing of trend of contact zone and back silver electrode, and this just greatly reduces electric current collection path, is conducive to reducing series resistance, improves the photoelectric conversion efficiency of battery, achieves significant effect;
3, structure of the present invention is simple, and cost is lower, is suitable for applying.
Accompanying drawing explanation
Fig. 1 is the cutaway view of the embodiment of the present invention one.
Fig. 2 is the schematic rear view of the embodiment of the present invention one.
Fig. 3 is the partial enlarged drawing of section contact area in Fig. 2.
Fig. 4 is the schematic rear view of the embodiment of the present invention two.
Fig. 5 is the schematic rear view of comparative example one of the present invention.
Wherein: 1, layer-of-substrate silicon; 2, backside passivation film; 3, metal layer on back; 4, back silver electrode; 5, contact zone.
Embodiment
Below in conjunction with embodiment, the present invention is further described.
Embodiment one:
Shown in Fig. 1 ~ 3, a kind of localized contact back of the body passivation solar cell, the multiple back silver electrodes 4 comprise layer-of-substrate silicon 1, be arranged in the backside passivation film 2 of layer-of-substrate silicon bottom surface, be covered in the metal layer on back 3 of backside passivation film bottom surface, contacting through backside passivation film and metal layer on back and with layer-of-substrate silicon bottom surface, the multiple contact zones 5 running through backside passivation film;
Described contact zone upper surface contacts with layer-of-substrate silicon bottom surface, and described contact zone is line segment shape and is arranged into the multirow be parallel to each other, and the contact zone often in row is parallel to each other and spaced apart, and the contact zone in adjacent lines is interspersed;
Often in row contact zone, the length of each contact zone is a, and the spacing between adjacent contact area is b; And a is 0.6mm; B is 0.9mm;
Spacing c between two adjacent row contact zones is 0.9mm; Spacing between two adjacent row contact zones is all identical;
The gross area of described contact zone accounts for 1.8% of silicon chip back side area.
In technique scheme, the width of described contact zone is 40 microns.
The bearing of trend of described contact zone and the bearing of trend of back silver electrode perpendicular.
Described metal layer on back is aluminium lamination, and described contact zone is silicon-aluminum contact zone.
Embodiment two:
Shown in Figure 4, a kind of localized contact back of the body passivation solar cell, its structure and embodiment one are similar to, and difference is:
Often in row contact zone, the length of each contact zone is a, and the spacing between adjacent contact area is b; And a is 0.6mm; B=a is 0.6mm;
Spacing c between two adjacent row contact zones is 0.8mm; Spacing between two adjacent row contact zones is all identical;
The gross area of described contact zone accounts for 2.5% of silicon chip back side area.
In technique scheme, the width of described contact zone is 30 microns.
The bearing of trend of described contact zone is identical with the bearing of trend of back silver electrode.
Described metal layer on back is aluminium lamination, and described contact zone is silicon-aluminum contact zone.
Comparative example one:
Shown in Figure 5, a kind of localized contact back of the body passivation solar cell, its structure and embodiment two myopia, difference is:
Often in row contact zone, the length of each contact zone is a, and the spacing between adjacent contact area is b; And a is 2mm; B is 2.4mm;
Spacing c between two adjacent row contact zones is 2.6mm; Spacing between two adjacent row contact zones is all identical;
The gross area of described contact zone accounts for 1.0% of silicon chip back side area.
In technique scheme, the width of described contact zone is 60 microns.
The bearing of trend of described contact zone is identical with the bearing of trend of back silver electrode.
Comparative example two:
A kind of localized contact back of the body passivation solar cell, its structure and comparative example one myopia, difference is:
Often in row contact zone, the length of each contact zone is a, and the spacing between adjacent contact area is b; And a is 4mm; B is 1mm;
Spacing c between two adjacent row contact zones is 1.0mm; Spacing between two adjacent row contact zones is all identical;
The gross area of described contact zone accounts for 4% of silicon chip back side area.
In technique scheme, the width of described contact zone is 50 microns.
The bearing of trend of described contact zone is identical with the bearing of trend of back silver electrode.
Then, the cell piece of 60 embodiments and comparative example is made solar module, and carry out electric performance test, result is as follows:
As seen from the above table, compared with comparative example one, the present invention obviously can reduce sial hole ratio, open circuit voltage improves 0.002 ~ 0.004V, short circuit current improves 0.08 ~ 0.12A, and electricity conversion improves 0.43 ~ 0.46%, achieves beyond thought technique effect.
Claims (8)
1. a localized contact back of the body passivation solar cell, the multiple back silver electrodes (4) comprising layer-of-substrate silicon (1), be arranged in the backside passivation film (2) of layer-of-substrate silicon bottom surface, be covered in the metal layer on back (3) of backside passivation film bottom surface, contact through backside passivation film and metal layer on back and with layer-of-substrate silicon bottom surface, the multiple contact zones (5) running through backside passivation film; And be positioned at the secondary gate electrode that layer-of-substrate silicon front is parallel to each other;
Described contact zone upper surface contacts with layer-of-substrate silicon bottom surface, and described contact zone is line segment shape and is arranged into the multirow be parallel to each other, and the contact zone often in row is parallel to each other and spaced apart, and the contact zone in adjacent lines is interspersed; It is characterized in that:
Often in row contact zone, the length of each contact zone is a, and the spacing between adjacent contact area is b; And a is 0.1 ~ 0.9mm; B is: 0.5a≤b≤3a;
Spacing c between two adjacent row contact zones is 0.5 ~ 1mm;
The gross area of described contact zone accounts for 1 ~ 3.5% of silicon chip back side area.
2. localized contact back of the body passivation solar cell according to claim 1, is characterized in that: the spacing between two adjacent row contact zones is all identical.
3. localized contact back of the body passivation solar cell according to claim 1, is characterized in that: the width of described contact zone is 20 ~ 80 microns.
4. localized contact back of the body passivation solar cell according to claim 1, is characterized in that: the bearing of trend of described contact zone parallels with the bearing of trend of the secondary gate electrode in front.
5. localized contact back of the body passivation solar cell according to claim 1, is characterized in that: the gross area of described contact zone accounts for 1.5 ~ 3% of silicon chip back side area.
6. localized contact back of the body passivation solar cell according to claim 1, is characterized in that: described contact zone contacts with metal layer on back or is embedded in metal layer on back.
7. localized contact back of the body passivation solar cell according to claim 1, it is characterized in that: described metal layer on back is aluminium lamination, described contact zone is silicon-aluminum contact zone.
8. localized contact back of the body passivation solar cell according to claim 1, is characterized in that: described contact zone runs through described metal layer on back.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510760515.6A CN105405901B (en) | 2015-11-10 | 2015-11-10 | Localized contact back of the body passivation solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510760515.6A CN105405901B (en) | 2015-11-10 | 2015-11-10 | Localized contact back of the body passivation solar cell |
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| Publication Number | Publication Date |
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| CN105405901A true CN105405901A (en) | 2016-03-16 |
| CN105405901B CN105405901B (en) | 2018-10-26 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106981527A (en) * | 2017-03-03 | 2017-07-25 | 浙江爱旭太阳能科技有限公司 | The backplate and battery of p-type PERC double-sided solar batteries |
| CN106981526A (en) * | 2017-03-03 | 2017-07-25 | 浙江爱旭太阳能科技有限公司 | The backplate and battery of p-type PERC double-sided solar batteries |
| CN107039544A (en) * | 2017-03-03 | 2017-08-11 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar batteries and preparation method thereof, component and system |
| CN107039545A (en) * | 2017-03-03 | 2017-08-11 | 浙江爱旭太阳能科技有限公司 | The backplate and battery of p-type PERC double-sided solar batteries |
| CN111446307A (en) * | 2020-04-09 | 2020-07-24 | 上海交通大学 | Laser grooving manufacturing method for maximizing conversion efficiency of solar cell |
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| CN104752562A (en) * | 2015-03-17 | 2015-07-01 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of local boron back surface passive field solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106981527A (en) * | 2017-03-03 | 2017-07-25 | 浙江爱旭太阳能科技有限公司 | The backplate and battery of p-type PERC double-sided solar batteries |
| CN106981526A (en) * | 2017-03-03 | 2017-07-25 | 浙江爱旭太阳能科技有限公司 | The backplate and battery of p-type PERC double-sided solar batteries |
| CN107039544A (en) * | 2017-03-03 | 2017-08-11 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar batteries and preparation method thereof, component and system |
| CN107039545A (en) * | 2017-03-03 | 2017-08-11 | 浙江爱旭太阳能科技有限公司 | The backplate and battery of p-type PERC double-sided solar batteries |
| CN106981527B (en) * | 2017-03-03 | 2019-08-16 | 浙江爱旭太阳能科技有限公司 | The rear electrode and battery of p-type PERC double-sided solar battery |
| CN107039545B (en) * | 2017-03-03 | 2019-11-12 | 浙江爱旭太阳能科技有限公司 | The rear electrode and battery of p-type PERC double-sided solar battery |
| CN106981526B (en) * | 2017-03-03 | 2019-11-15 | 浙江爱旭太阳能科技有限公司 | The rear electrode and battery of p-type PERC double-sided solar battery |
| CN107039544B (en) * | 2017-03-03 | 2020-08-04 | 广东爱康太阳能科技有限公司 | P-type PERC double-sided solar cell and preparation method, assembly and system thereof |
| CN111446307A (en) * | 2020-04-09 | 2020-07-24 | 上海交通大学 | Laser grooving manufacturing method for maximizing conversion efficiency of solar cell |
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| Publication number | Publication date |
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| CN105405901B (en) | 2018-10-26 |
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Address after: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee after: CSI Cells Co.,Ltd. Patentee after: Funing atlas sunshine Power Technology Co., Ltd Address before: No. 199, deer mountain road, Suzhou high tech Zone, Jiangsu Province Patentee before: CSI Cells Co.,Ltd. Patentee before: CSI-GCL SOLAR MANUFACTURING (YANCHENG) Co.,Ltd. |