CN107039545A - The backplate and battery of p-type PERC double-sided solar batteries - Google Patents
The backplate and battery of p-type PERC double-sided solar batteries Download PDFInfo
- Publication number
- CN107039545A CN107039545A CN201710124874.1A CN201710124874A CN107039545A CN 107039545 A CN107039545 A CN 107039545A CN 201710124874 A CN201710124874 A CN 201710124874A CN 107039545 A CN107039545 A CN 107039545A
- Authority
- CN
- China
- Prior art keywords
- silver
- colored
- main grid
- alum gate
- backplate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 55
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 55
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 55
- 229940037003 alum Drugs 0.000 claims abstract description 76
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 71
- 239000010703 silicon Substances 0.000 claims abstract description 71
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 37
- 239000004332 silver Substances 0.000 claims description 37
- 229910052709 silver Inorganic materials 0.000 claims description 37
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 27
- 229910052782 aluminium Inorganic materials 0.000 claims description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 26
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 26
- 239000004411 aluminium Substances 0.000 claims description 18
- 230000009466 transformation Effects 0.000 abstract description 12
- 238000010276 construction Methods 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 description 9
- 230000005611 electricity Effects 0.000 description 5
- 238000007639 printing Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000002003 electrode paste Substances 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of backplate of p-type PERC double-sided solar batteries, including at least 2 silver-colored main grids of the back of the body and 25 500 alum gate lines being parallel to each other being parallel to each other, the alum gate line and the back of the body be silver-colored, and main grid is vertical is connected；The alum gate line is connected by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and the silver-colored main grid of the back of the body is connected by the silver-colored slotted zones of the back of the body opened up in silicon chip back side with P-type silicon；The silver-colored main grid of every back of the body is set to discontinuous segmental structure, and the silver-colored main grid of every section of back of the body is correspondingly arranged the silver-colored slotted zones of a back of the body；The silver-colored slotted unit of at least one back of the body in the silver-colored slotted zones of the back of the body, the silver-colored slotted unit pattern of the back of the body is rectangle.The invention also discloses a kind of p-type PERC double-sided solar batteries.Using the present invention, electric current export ability is strong, simple in construction, easy industrialization, while improving the photoelectric transformation efficiency of battery.
Description
Technical field
The present invention relates to area of solar cell, more particularly to a kind of backplate of p-type PERC double-sided solar batteries,
Correspondingly, the invention further relates to a kind of p-type PERC double-sided solar batteries.
Background technology
Solar cell power generation is that solar energy is converted into electric energy using solar cell, because it is green ring
Product is protected, environmental pollution will not be caused, and is renewable resource, so in the case of current energy shortage, solar-electricity
Pond is a kind of novel energy for having a broad based growth future.
Solar battery sheet is during electric energy is converted light energy into, and its internal photo-generated carrier produced needs to pass through
The electrode of outside printing is collected and drawn, and is then connected with external circuit, so that electric current be transported out.Above-mentioned silk-screen printing
Process is further subdivided into the silver-colored main grid printing of the back of the body, the secondary grid printing of back of the body silver and positive electrode printing of solar cell.Positive electrode is starched
Material and back electrode slurry are printed on crystal silicon solar battery on the front and back, through oversintering, play a part of collected current.It is existing
Technology in, backplate is made up of silver-colored main grid and Al-BSF, back electrode directly and P-type silicon contact, but be used for PERC it is two-sided
During solar cell, the passivating film due to PERC overleaf provided with insulation is difficult to transmission electricity using existing backplate
The purpose of stream, it is therefore desirable to a kind of new backplate is provided and is applicable to PERC double-sided solar batteries.
The content of the invention
The technical problems to be solved by the invention are there is provided a kind of backplate of p-type PERC double-sided solar batteries,
Electric current export ability is strong, simple in construction, easy industrialization, while improving the photoelectric transformation efficiency of battery.
The technical problems to be solved by the invention are, there is provided a kind of p-type PERC double-sided solar batteries, two-sided to absorb
Sunshine, electric current export ability is strong, simple in construction, easy industrialization, while improving the photoelectric transformation efficiency of component.
In order to solve the above-mentioned technical problem, the invention provides a kind of backplate of p-type PERC double-sided solar batteries
The alum gate line being parallel to each other including at least 2 silver-colored main grids of the back of the body being parallel to each other and 25-500 bars, the alum gate line and the silver-colored main grid of the back of the body
Vertical connection；
The alum gate line is connected by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and the silver-colored main grid of the back of the body passes through in silicon
The silver-colored slotted zones of the back of the body that the piece back side is opened up are connected with P-type silicon；
The silver-colored main grid of every back of the body is set to discontinuous segmental structure, and the silver-colored main grid of every section of back of the body is correspondingly arranged the silver-colored slotted zones of a back of the body；
The silver-colored slotted unit of at least one back of the body in the silver-colored slotted zones of the back of the body, the silver-colored slotted unit pattern of the back of the body is rectangle.
As the optimal technical scheme of the backplate of the p-type PERC double-sided solar batteries, the silver-colored slotted zones of the back of the body
It is be arranged in parallel between the interior silver-colored slotted unit of at least two back ofs the body, the silver-colored slotted unit of the back of the body.
As the optimal technical scheme of the backplate of the p-type PERC double-sided solar batteries, two neighboring back of the body silver is opened
Spacing between groove unit is equal, and spacing is 10-4880 μm.
As the optimal technical scheme of the backplate of the p-type PERC double-sided solar batteries, two neighboring back of the body silver is opened
Spacing between groove unit is unequal, and spacing is 10-4880 μm.
As the optimal technical scheme of the backplate of the p-type PERC double-sided solar batteries, the back of the body silver fluting is single
The width of member is 10-5000 μm.
As the optimal technical scheme of the backplate of the p-type PERC double-sided solar batteries, the silver-colored main grid of the back of the body
Width is 0.5-5mm.
As the optimal technical scheme of the backplate of the p-type PERC double-sided solar batteries, the silver-colored main grid of the back of the body
Bar number is 2-8 bars.
It is used as the optimal technical scheme of the backplate of the p-type PERC double-sided solar batteries, the silver-colored main grid point of every back of the body
Into 2-20 sections, the spacing between adjacent two sections is 10-50mm.
Correspondingly, the present invention also provides a kind of p-type PERC double-sided solar batteries, the p-type PERC double-sided solars electricity
Pond includes the backplate, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and just
Silver electrode；The backplate, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and
Positive silver electrode stacks gradually connection from bottom to up；
The backplate includes the alum gate line that at least 2 silver-colored main grids of the back of the body being parallel to each other and 25-500 bars are parallel to each other, described
Main grid is vertical is connected with back of the body silver for alum gate line；
The alum gate line is connected by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and alum gate slotted zones and alum gate line are same
To the silver-colored main grid of the back of the body is connected by the silver-colored slotted zones of the back of the body opened up in silicon chip back side with P-type silicon；
The silver-colored main grid of every back of the body is set to discontinuous segmental structure, and the silver-colored main grid of every section of back of the body is correspondingly arranged the silver-colored slotted zones of a back of the body；
The silver-colored slotted unit of at least one back of the body in the silver-colored slotted zones of the back of the body, the silver-colored slotted unit pattern of the back of the body is rectangle.
Correspondingly, the present invention also provides a kind of p-type PERC double-sided solar batteries, it is characterised in that the p-type PERC is double
Face solar cell includes the backplate, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter stage, front nitrogen
SiClx film and positive silver electrode；The backplate, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter stage, front
Silicon nitride film and positive silver electrode stack gradually connection from bottom to up；
The backplate includes the alum gate line that at least 2 silver-colored main grids of the back of the body being parallel to each other and 25-500 bars are parallel to each other, described
Main grid is vertical is connected with back of the body silver for alum gate line；
The alum gate line is connected by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and alum gate slotted zones are hung down with alum gate line
Directly, the silver-colored main grid of the back of the body is connected by the silver-colored slotted zones of the back of the body opened up in silicon chip back side with P-type silicon；
The silver-colored main grid of every back of the body is set to discontinuous segmental structure, and the silver-colored main grid of every section of back of the body is correspondingly arranged the silver-colored slotted zones of a back of the body；
The silver-colored slotted unit of at least one back of the body in the silver-colored slotted zones of the back of the body, the silver-colored slotted unit pattern of the back of the body is rectangle.
Implement the embodiment of the present invention, have the advantages that：
The backplate of p-type PERC double-sided solar batteries of the present invention, can both substitute existing one side solar cell knot
The effect of full aluminum back electric field, the also function with current－carrying conductor in structure, it is adaptable to be installed in p-type PERC double-sided solar batteries
The back side is used as backplate.Alum gate line and the silver-colored main grid of the back of the body are all connected by slotted zones with P-type silicon, the electric current export energy of backplate
Power is further lifted.Simple in construction, the easy industrialization of backplate, while improving the photoelectric transformation efficiency of battery.Using this
The consumption of silver paste and aluminium paste can be saved by inventing the p-type PERC double-sided solar batteries of the backplate, reduce production cost, and
And two-sided absorption luminous energy is realized, it is significantly expanded the application of solar cell and improves photoelectric transformation efficiency.
Brief description of the drawings
Fig. 1 is a kind of structural representation of p-type PERC double-sided solar battery backplates of the invention；
Fig. 2 is a kind of structural representation in the lbg area of p-type PERC double-sided solar battery backplates of the invention；
Fig. 3 is a kind of another structural representation in the lbg area of p-type PERC double-sided solar battery backplates of the invention；
Fig. 4 is a kind of structural representation of p-type PERC double-sided solar batteries of the invention；
Fig. 5 is the structural representation of another p-type PERC double-sided solar batteries of the invention；
Fig. 6 is a kind of structural representations in the lbg area of p-type PERC double-sided solar battery backplates of Fig. 5.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with accompanying drawing
It is described in detail on step ground.
In recent years, with the further investigation of scientist and technical staff, it was found that a kind of PERC solar energy of passivating back
Battery can further improve the photoelectric transformation efficiency of battery.But the pellumina of cell backside and silicon nitride film are all insulation
Film, it is impossible to transfer out electronics to come, therefore conventional way is the passivating film fluting below grid line, during printing grid line, silver paste
It can be filled into slotted zones and form Ohmic contact with P-type silicon, so as to realize conducting function.
Existing PERC one sides solar cell is covered in the whole back of the body of silicon chip provided with full aluminum back electric field at the back side of battery
Face, the effect of full aluminum back electric field is to improve open-circuit voltage Voc and short circuit current flow Jsc, forces minority carrier away from surface, few
Number Carrier recombination rate reduction, so as to improve battery efficiency on the whole.However, because full aluminum back electric field is light tight, therefore, having
The rear surface of solar cell of full aluminum back electric field can not absorb luminous energy, positive can only absorb luminous energy, its photoelectric transformation efficiency is difficult to greatly
The raising of amplitude.
Therefore, the present invention proposes a kind of new backplate, it can both substitute complete in existing one side solar battery structure
The effect of aluminum back electric field, the also function with current－carrying conductor, it is adaptable to make at the back side for being installed in p-type PERC double-sided solar batteries
For backplate.
As Figure 1-3, the present invention provides a kind of backplate of p-type PERC double-sided solar batteries, including at least 2
The alum gate line 2 that the silver-colored main grid 1 of the back of the body and 25-500 bars being parallel to each other are parallel to each other, the alum gate line 2 and the back of the body be silver-colored, and main grid 1 is vertical connects
Connect；
The alum gate line 2 is connected by the alum gate slotted zones 9 opened up in silicon chip back side with P-type silicon 5, and the silver-colored main grid 1 of the back of the body passes through
The silver-colored slotted zones 10 of the back of the body opened up in silicon chip back side are connected with P-type silicon 5；
The silver-colored main grid 1 of every back of the body is set to discontinuous segmental structure, and the silver-colored main grid 1 of every section of back of the body is correspondingly arranged the silver-colored slotted zones 10 of a back of the body；
The silver-colored slotted unit 11 of at least one back of the body in the silver-colored slotted zones 10 of the back of the body, the silver-colored pattern of slotted unit 11 of the back of the body is rectangle.
Backplate of the present invention sets the back side of silicon chip, and in order to suitable for double-sided solar battery, realize the back side
Sunshine can be absorbed, full aluminum back electric field is no longer set, but is changed to set the alum gate line 2 of many bars, using lbg technology
Lbg area overleaf is opened up in silicon nitride film 3 and backside oxide aluminium film 4, lbg divides into the silver-colored slotted zones 10 of the back of the body and aluminium
Grid slotted zones 9, back silver paste is printed on the silver-colored slotted zones 10 of the back of the body, and the silver-colored main grid 1 of the back of the body formed after sintering is by carrying on the back silver-colored slotted zones 10
It is connected with P-type silicon 5；Aluminium paste is printed on the alum gate line 2 formed after alum gate slotted zones 9, sintering and passes through alum gate slotted zones 9 and P-type silicon 5
Connection.The silver-colored main grid 1 of the back of the body intersected with alum gate line 2 collects the electronics on alum gate line 2 and the electricity come is directly transferred out from P-type silicon
Son, so that the current output capability of whole backplate gets a promotion.
Alum gate line 2 replaces full aluminum back electric field to play raising open-circuit voltage Voc and short circuit current flow Jsc, reduces minority carrier
Sub- recombination rate, improves the effect of cell photoelectric conversion efficiency；The dense distribution of 25-500 bar alum gates line 2 passes through alum gate on silicon chip
Slotted zones 9 and the formation localized contact of P-type silicon 5, in time can come out the electron transport of silicon chip everywhere；And alum gate line 2 is not
The back side of silicon chip is covered comprehensively, and sunshine can be projected in silicon chip from the sensitive area between alum gate line 2, so as to realize silicon chip back side
Luminous energy is absorbed, the photoelectric transformation efficiency of battery is greatly improved.
Preferably, the radical of the alum gate line 2 is 30-350 bars, more preferably, and the radical of the alum gate line 2 is 50-300
Bar.
In general, the width of alum gate line 2 is 30-500 μm, and the width of alum gate slotted zones 9 is smaller, therefore for the back side
Silicon nitride film 3 and the damage area of backside oxide aluminium film 4 are small, and degree of injury is low.But, the width of the silver-colored main grid 1 of the back of the body reaches 0.5-
5mm, is far wider than the width of alum gate line 2, and the silver-colored area of slotted zones 10 of the back of the body causes the passivation area at the back side to reduce as crossed senior general, it is impossible to most
The compound of the few son in the back side is reduced to big degree, the lifting of photoelectric transformation efficiency is restricted, the silver-colored area of slotted zones 10 of the back of the body is too small, can lead again
Cause the back of the body silver electrode paste contacted with P-type silicon less, influence the output of electric current.
Therefore, the present inventor passes through multiple contrast experiment, to the silver-colored gross area of slotted unit 11 of the back of the body in the silver-colored slotted zones 10 of the back of the body
It is designed with arrangement, provided with the silver-colored slotted unit 11 of at least one back of the body in the silver-colored slotted zones 10 of the back of the body, the silver-colored figure of slotted unit 11 of the back of the body
Case is rectangle.
When slotted unit 11 silver-colored provided with a back of the body in the silver-colored slotted zones 10 of the back of the body, as shown in Fig. 2 the silver-colored slotted unit 11 of the back of the body
In the middle of the silver-colored slotted zones 10 of the back of the body, the width of the silver-colored slotted unit 11 of the back of the body is 10-5000 μm, it is preferable that the back of the body silver fluting
The width of unit 11 is 200-5000 μm.The length of the silver-colored slotted unit 11 of the back of the body is identical with the length of the silver-colored main grid 1 of the back of the body, can also
It is short 5-5000 μm of the silver-colored slotted unit 11 of back of the body main grid 1 more silver-colored than the back of the body or carries on the back silver-colored slotted unit 11 than the long 5- of the silver-colored main grid 1 of the back of the body
5000μm。
When carrying on the back silver-colored slotted unit 11 provided with two or more in the silver-colored slotted zones 10 of the back of the body, as shown in figure 3, back of the body silver fluting is single
First 11 bearing of trends are consistent with the bearing of trend of the silver-colored main grid 1 of the back of the body, and the width of the silver-colored slotted unit 11 of the back of the body is 10-4880 μm, excellent
Selection of land, the width of the silver-colored slotted unit 11 of the back of the body is 10-2450 μm.The length of the silver-colored slotted unit 11 of the back of the body and the silver-colored main grid 1 of the back of the body
Length is identical or short 5-5000 μm of the silver-colored slotted unit 11 of back of the body main grid 1 more silver-colored than the back of the body or back of the body silver slotted unit 11
Long 5-5000 μm of main grid 1 more silver-colored than the back of the body.
It is be arranged in parallel between the silver-colored slotted unit 11 of the back of the body, the spacing between the two neighboring silver-colored slotted unit 11 of the back of the body is equal, spacing
For 10-4880 μm；Spacing between the two neighboring silver-colored slotted unit 11 of the back of the body can also be unequal, and spacing is 10-4880 μm, wherein
One preferable example is that spacing is big between the silver-colored slotted unit 11 of the middle back of the body, and such as spacing is 800 μm, and positioned at both sides
Spacing is small between the silver-colored slotted unit 11 of the back of the body, and such as spacing is 200 μm.
It should be noted that the width of the silver-colored main grid 1 of the back of the body is more than the width of the silver-colored slotted zones 10 of the back of the body, it is ensured that the silver-colored slotted zones of the back of the body
Back silver paste is filled up in 10 so that the silver-colored main grid 1 of the back of the body forms good Ohmic contact with P-type silicon 5.
When the bar number of the silver-colored main grid 1 of the back of the body is provided with 2-8 bars, cell photoelectric conversion performance reaches optimal.
The silver-colored main grid of the back of the body of the present invention is set to discontinuous segmental structure, and the silver-colored main grid 1 of every back of the body is divided into 2-20 sections, adjacent two sections
Between spacing be 5-100mm.The silver-colored main grid 1 of every section of back of the body is correspondingly arranged the different back ofs the body on the silver-colored slotted zones 10 of a back of the body, same straight line
The arrangement of the silver-colored slotted unit 11 of the back of the body be able to can also be differed with identical in silver-colored slotted zones 10.
The present invention can be reduced the consumption of silver paste, be reduced production cost using the silver-colored structure of main grid 1 of the noncontinuity segmented back of the body.
By the pattern for the silver-colored slotted unit 11 of the back of the body for adjusting the silver-colored slotted zones 10 of the back of the body, spacing and size improve the export of backplate electric current
Ability, while lbg area is smaller, it is ensured that enough passivating back areas, so as to lift two-sided PERC solar cells
Photoelectric transformation efficiency.
To sum up, using backplate of the present invention, alum gate line 2 and the silver-colored main grid 1 of the back of the body are all connected by slotted zones with P-type silicon 5
Connect, the electric current export ability of backplate is further lifted.And to can be applied to p-type PERC two-sided for above-mentioned backplate of the invention
Solar cell, realizes two-sided absorption luminous energy, is significantly expanded the application of solar cell and improves photoelectric transformation efficiency.
Correspondingly, as shown in figure 4, the present invention also provides a kind of p-type PERC double-sided solar batteries, including back side electricity
Pole, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type emitter stage 6, front side silicon nitride film 7 and positive silver electrode 8；Institute
State backplate, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type emitter stage 6, front side silicon nitride film 7 and positive silver
Electrode 8 stacks gradually connection from bottom to up.
The backplate includes at least 2 silver-colored main grids 1 of the back of the body being parallel to each other and the mutual alum gate line 2 of 25-500 bars, institute
Stating alum gate line 2, main grid 1 is vertical is connected with back of the body silver；
The alum gate line 2 is connected by the alum gate slotted zones 9 opened up in silicon chip back side with P-type silicon 5, alum gate slotted zones 9 and alum gate
In the same direction, the silver-colored main grid 1 of the back of the body is connected line 2 by the silver-colored slotted zones 10 of the back of the body opened up in silicon chip back side with P-type silicon 5；
The silver-colored main grid 1 of every back of the body is set to discontinuous segmental structure, and the silver-colored main grid 1 of every section of back of the body is correspondingly arranged the silver-colored slotted zones 10 of a back of the body；
The silver-colored slotted unit 11 of at least one back of the body in the silver-colored slotted zones 10 of the back of the body, the silver-colored pattern of slotted unit 11 of the back of the body is rectangle.
It should be noted that the silver-colored slotted zones 10 of the back of the body are not showed that in figure, and the quantity of alum gate line 2 is excessive, it is difficult to one in figure
One is drawn, and only representative is used as with wherein several in Fig. 4.
Correspondingly, as shown in figure 5, the present invention also provides a kind of p-type PERC double-sided solar batteries, the p-type PERC is double
Face solar cell includes the backplate, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type emitter stage 6, just
Face silicon nitride film 7 and positive silver electrode 8；The backplate, back side silicon nitride 3, backside oxide aluminium film 4, P-type silicon 5, N-type hair
Emitter-base bandgap grading 6, front side silicon nitride film 7 and positive silver electrode 8 stack gradually connection from bottom to up.
Such as Fig. 6, the backplate includes at least 2 silver-colored main grids 1 of the back of the body being parallel to each other and the mutual alum gate of 25-500 bars
Line 2, main grid 1 is vertical is connected with back of the body silver for the alum gate line 2；
The alum gate line 2 is connected by the alum gate slotted zones 9 opened up in silicon chip back side with P-type silicon 5, alum gate slotted zones 9 and alum gate
Line 2 is vertical, and the silver-colored main grid 1 of the back of the body is connected by the silver-colored slotted zones 10 of the back of the body opened up in silicon chip back side with P-type silicon 5；
The silver-colored main grid 1 of every back of the body is set to discontinuous segmental structure, and the silver-colored main grid 1 of every section of back of the body is correspondingly arranged the silver-colored slotted zones 10 of a back of the body；
The silver-colored slotted unit 11 of at least one back of the body in the silver-colored slotted zones 10 of the back of the body, the silver-colored pattern of slotted unit 11 of the back of the body is rectangle.
The backplate of existing one side solar cell is made up of silver-colored main grid and Al-BSF, with existing one side solar cell
Compare, p-type PERC double-sided solar batteries of the present invention are using the silver-colored main grid 1 of some back ofs the body and a plurality of alum gate line be arrangeding in parallel
2 compositions, alum gate line 2 not only substitutes full aluminum back electric field in existing one side solar cell and realizes back side extinction, is additionally operable to carry on the back silver-colored electricity
Secondary grid structure in extremely is used as current－carrying conductor to conduct electronics.
Moreover, alum gate line 2 and the silver-colored main grid 1 of the back of the body are all connected by slotted zones with P-type silicon 5, the electric current export energy of backplate
Power is further lifted.
Finally, using p-type PERC double-sided solar batteries made from backplate of the present invention, silver paste and aluminium can be saved
The consumption of slurry, reduces production cost, and realizes two-sided absorption luminous energy, is significantly expanded application and the raising of solar cell
Photoelectric transformation efficiency.
It should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than to the scope of the present invention
Limitation, although being explained in detail with reference to preferred embodiment to the present invention, it will be understood by those within the art that, can
To be modified to technical scheme or equivalent substitution, without departing from the spirit and scope of technical solution of the present invention.
Claims (10)
1. a kind of backplate of p-type PERC double-sided solar batteries, it is characterised in that including at least 2 back ofs the body being parallel to each other
The alum gate line that silver-colored main grid and 25-500 bar is parallel to each other, main grid is vertical is connected with back of the body silver for the alum gate line；
The alum gate line is connected by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and the silver-colored main grid of the back of the body passes through in silicon
The silver-colored slotted zones of the back of the body that the piece back side is opened up are connected with P-type silicon；
The silver-colored main grid of every back of the body is set to discontinuous segmental structure, and the silver-colored main grid of every section of back of the body is correspondingly arranged the silver-colored slotted zones of a back of the body；
The silver-colored slotted unit of at least one back of the body in the silver-colored slotted zones of the back of the body, the silver-colored slotted unit pattern of the back of the body is rectangle.
2. the backplate of p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the back of the body silver fluting
It is be arranged in parallel between the silver-colored slotted unit of at least two back ofs the body in area, the silver-colored slotted unit of the back of the body.
3. the backplate of p-type PERC double-sided solar batteries as claimed in claim 2, it is characterised in that two neighboring back of the body silver
Spacing between slotted unit is equal, and spacing is 10-4880 μm.
4. the backplate of p-type PERC double-sided solar batteries as claimed in claim 2, it is characterised in that two neighboring back of the body silver
Spacing between slotted unit is unequal, and spacing is 10-4880 μm.
5. the backplate of p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that alum gate slotted zones with
Alum gate line is in the same direction or vertical.
6. the backplate of p-type PERC double-sided solar batteries as claimed in claim 1 or 2, it is characterised in that the back of the body silver is opened
The width of groove unit is 10-5000 μm；The width of the silver-colored main grid of the back of the body is 0.5-5mm.
7. the backplate of p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the silver-colored main grid of the back of the body
Bar number be 2-8 bars.
8. the backplate of p-type PERC double-sided solar batteries as claimed in claim 1, it is characterised in that the silver-colored main grid of every back of the body
It is 5-50mm to be divided into the spacing between 2-20 sections, adjacent two sections.
9. a kind of p-type PERC double-sided solar batteries, it is characterised in that the p-type PERC double-sided solar batteries include described
Backplate, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode；Institute
State backplate, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode from
Under supreme stack gradually connection；
The backplate includes the alum gate line that at least 2 silver-colored main grids of the back of the body being parallel to each other and 25-500 bars are parallel to each other, described
Main grid is vertical is connected with back of the body silver for alum gate line；
The alum gate line is connected by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and alum gate slotted zones and alum gate line are same
To the silver-colored main grid of the back of the body is connected by the silver-colored slotted zones of the back of the body opened up in silicon chip back side with P-type silicon；
The silver-colored main grid of every back of the body is set to discontinuous segmental structure, and the silver-colored main grid of every section of back of the body is correspondingly arranged the silver-colored slotted zones of a back of the body；
The silver-colored slotted unit of at least one back of the body in the silver-colored slotted zones of the back of the body, the silver-colored slotted unit pattern of the back of the body is rectangle.
10. a kind of p-type PERC double-sided solar batteries, it is characterised in that the p-type PERC double-sided solar batteries include described
Backplate, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode；Institute
State backplate, back side silicon nitride, backside oxide aluminium film, P-type silicon, N-type emitter stage, front side silicon nitride film and positive silver electrode from
Under supreme stack gradually connection；
The backplate includes the alum gate line that at least 2 silver-colored main grids of the back of the body being parallel to each other and 25-500 bars are parallel to each other, described
Main grid is vertical is connected with back of the body silver for alum gate line；
The alum gate line is connected by the alum gate slotted zones opened up in silicon chip back side with P-type silicon, and alum gate slotted zones are hung down with alum gate line
Directly, the silver-colored main grid of the back of the body is connected by the silver-colored slotted zones of the back of the body opened up in silicon chip back side with P-type silicon；
The silver-colored main grid of every back of the body is set to discontinuous segmental structure, and the silver-colored main grid of every section of back of the body is correspondingly arranged the silver-colored slotted zones of a back of the body；
The silver-colored slotted unit of at least one back of the body in the silver-colored slotted zones of the back of the body, the silver-colored slotted unit pattern of the back of the body is rectangle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710124874.1A CN107039545B (en) | 2017-03-03 | 2017-03-03 | The rear electrode and battery of p-type PERC double-sided solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710124874.1A CN107039545B (en) | 2017-03-03 | 2017-03-03 | The rear electrode and battery of p-type PERC double-sided solar battery |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107039545A true CN107039545A (en) | 2017-08-11 |
| CN107039545B CN107039545B (en) | 2019-11-12 |
Family
ID=59533329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710124874.1A Active CN107039545B (en) | 2017-03-03 | 2017-03-03 | The rear electrode and battery of p-type PERC double-sided solar battery |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107039545B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108538948A (en) * | 2018-06-14 | 2018-09-14 | 泰州隆基乐叶光伏科技有限公司 | Solar cell grid line structure, solar battery sheet and solar energy stacked wafer moudle |
| WO2021083943A1 (en) * | 2019-10-31 | 2021-05-06 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Method of manufacturing a photovoltaic device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103489934A (en) * | 2013-09-25 | 2014-01-01 | 晶澳（扬州）太阳能科技有限公司 | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof |
| CN104218102A (en) * | 2013-05-31 | 2014-12-17 | 茂迪股份有限公司 | Solar cell and module thereof |
| CN104576773A (en) * | 2013-10-15 | 2015-04-29 | 太阳世界工业美国有限公司 | Solar cell contact structure |
| CN105405901A (en) * | 2015-11-10 | 2016-03-16 | 苏州阿特斯阳光电力科技有限公司 | Local contact back passivation solar cell |
| CN106252443A (en) * | 2015-06-09 | 2016-12-21 | 太阳世界创新有限公司 | Solar battery array |
| CN206697490U (en) * | 2017-03-03 | 2017-12-01 | 浙江爱旭太阳能科技有限公司 | The backplate and battery of p-type PERC double-sided solar batteries |
-
2017
- 2017-03-03 CN CN201710124874.1A patent/CN107039545B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104218102A (en) * | 2013-05-31 | 2014-12-17 | 茂迪股份有限公司 | Solar cell and module thereof |
| CN103489934A (en) * | 2013-09-25 | 2014-01-01 | 晶澳（扬州）太阳能科技有限公司 | Local aluminum back surface field solar battery with two diaphanous faces and preparation method thereof |
| CN104576773A (en) * | 2013-10-15 | 2015-04-29 | 太阳世界工业美国有限公司 | Solar cell contact structure |
| CN106252443A (en) * | 2015-06-09 | 2016-12-21 | 太阳世界创新有限公司 | Solar battery array |
| CN105405901A (en) * | 2015-11-10 | 2016-03-16 | 苏州阿特斯阳光电力科技有限公司 | Local contact back passivation solar cell |
| CN206697490U (en) * | 2017-03-03 | 2017-12-01 | 浙江爱旭太阳能科技有限公司 | The backplate and battery of p-type PERC double-sided solar batteries |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108538948A (en) * | 2018-06-14 | 2018-09-14 | 泰州隆基乐叶光伏科技有限公司 | Solar cell grid line structure, solar battery sheet and solar energy stacked wafer moudle |
| WO2021083943A1 (en) * | 2019-10-31 | 2021-05-06 | CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement | Method of manufacturing a photovoltaic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107039545B (en) | 2019-11-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102810578B (en) | A kind of solar cell and main gate line thereof | |
| CN102184973A (en) | Positive electrode structure of solar battery plate | |
| CN108735829A (en) | The p-type PERC double-sided solar batteries and preparation method thereof of back side photoelectric conversion efficiency can be promoted | |
| CN106981524A (en) | The back electrode structure and battery of p-type PERC double-sided solar batteries | |
| CN106847944A (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN107039545B (en) | The rear electrode and battery of p-type PERC double-sided solar battery | |
| CN206697491U (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN106981526B (en) | The rear electrode and battery of p-type PERC double-sided solar battery | |
| CN202523721U (en) | Positive grid line electrode structure of improved crystalline silicon cell | |
| CN106981527B (en) | The rear electrode and battery of p-type PERC double-sided solar battery | |
| CN106981528A (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN206697490U (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN102544128B (en) | Solar cell | |
| CN206628488U (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN206628489U (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN106847946A (en) | The back electrode structure and battery of p-type PERC double-sided solar batteries | |
| CN203085565U (en) | Novel solar battery positive electrode | |
| CN206628479U (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN206697488U (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN206628475U (en) | The back electrode structure and battery of p-type PERC double-sided solar batteries | |
| CN208507688U (en) | It is able to ascend the p-type PERC double-sided solar battery of back side photoelectric conversion efficiency | |
| CN106876494A (en) | The back electrode structure and battery of p-type PERC double-sided solar batteries | |
| CN209434207U (en) | A kind of high efficiency photovoltaic module | |
| CN202957258U (en) | Crystalline silicon solar battery and front side electrode thereof | |
| CN207165582U (en) | Eight sectional back electrode monocrystaline silicon solar cells |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |