CN207165582U - Eight sectional back electrode monocrystaline silicon solar cells - Google Patents
Eight sectional back electrode monocrystaline silicon solar cells Download PDFInfo
- Publication number
- CN207165582U CN207165582U CN201721008690.0U CN201721008690U CN207165582U CN 207165582 U CN207165582 U CN 207165582U CN 201721008690 U CN201721008690 U CN 201721008690U CN 207165582 U CN207165582 U CN 207165582U
- Authority
- CN
- China
- Prior art keywords
- silicon solar
- segmentation
- monocrystaline silicon
- back electrode
- solar cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The utility model discloses a kind of eight sectional back electrode monocrystaline silicon solar cells, it is related to solar cell preparing technical field, including four main grids, every main grid is made up of eight evenly spaced segmentations, and the both ends of any segmentation are arranged to circular arc type, and some sidelines are connected between any segmentation side and silicon chip, every main gate line is made up of 8 segmentations, it is corresponding with eight sections of designs of front electrode, welding stress is reduced, reduces fragment rate；Each segmentation of back electrode has some sidelines, strengthens contact of the back electrode with back surface field.
Description
Technical field
Solar cell preparing technical field, more particularly to a kind of smooth high conversion rate are the utility model is related to, welding is stable
Eight sectional back electrode monocrystaline silicon solar cells.
Background technology
Silk-screen printing is the process for making solar cel electrode, and its principle is to utilize the saturating slurry of silk screen visuals mesh,
The general principle of the non-graphic impermeable slurry of part mesh is printed.Slurry forms well after drying, sintering with silicon chip
Ohmic contact, the electrode of solar cell has just been made.Thus, the collection to solar cell electric current of the shape of silk screen figure, hair
The output of electrical power plays an important role.
The principle that solar cell generates electricity is to produce energy conversion using the photovoltaic effect of p-n knots, and solar cell exists
Under the irradiation of the sun, p-n knots have been formed about photoproduction electric field, have converted light energy into electric energy, then pass through solar battery surface
Electrode electric energy is transmitted out, the electrode of battery surface is exactly based on half tone figure and just up and passes through the printing of silver paste material
Cross made of after drying sintering.
The material of back of solar cell printing has aluminium paste and silver paste, and the effect of aluminium paste is the back side P of passivating solar battery
Area, form P+/P height and tie, the effect of silver paste is similar to wire, plays a part of conductive and welding；It is of the prior art too
The design of positive energy cell backside half tone electrode is not reasonable, and its electrode is rectangle structure, and this structure causes silver electrode
Area is larger, and aluminium paste region area reduces, and causes the conversion efficiency of solar cell relatively low, the ability of electrode collected current compared with
Low, the market competitiveness is low, moreover, the usage amount of silver paste is larger, production cost is high, if in addition, aluminium paste region area is small, can
The absorption to feux rouges is influenceed, the life-span of few son can reduce, inadvisable.
The utility model application of Application No. 201320722698.9 discloses a kind of cost that reduces and improves transformation efficiency
Monocrystaline silicon solar cell back side half tone, including back side half tone, printed edge and silicon chip edge, the printed edge is positioned at described
The inner side of back side half tone, the silicon chip edge are located at the outside of the back side half tone, the longitudinal direction on the space of a whole page of the back side half tone
Weld some segment electrodes, every section of electrode is by some electrode monomer compositions, and back side half tone electrode separation is into some segment electrode lists
Body, the area of Al-BSF is added while reducing silver electrode area, the life-span of few son will improve, and half tone is to infrared ray
Absorption will strengthen, and its conversion efficiency improves with regard to that can obtain maximizing, while ensure that the good welding performance of silver paste, passes through
The back electrode unit consumption of test segmentation reduces 40%-50%, and adhesive force is relatively low in more than 2N, but still.
Utility model content
The purpose of this utility model is to overcome deficiency of the prior art, there is provided a kind of eight sectional back electrode monocrystalline silicon are too
Positive energy battery.
The utility model is achieved through the following technical solutions：A kind of eight sectional back electrode monocrystaline silicon solar cells,
Including four main grids, every main grid is made up of eight evenly spaced segmentations, and the both ends of any segmentation are arranged to circular arc type,
Some sidelines are connected between any segmentation side and silicon chip.
Further, the length of any segmentation be 8-9mm, width 1.5-2.5mm.
Further, the main grid is 8-9mm away from silicon chip distance from top.
Further, the interval between adjacent two segmentations of the same main grid is 8-10mm.
Further, the width of any main grid is 1.5-2.5mm.
Further, the width in the sideline be 0.1-0.2mm, length 0.5-0.8mm.
The beneficial effects of the utility model are：Every main gate line is made up of 8 segmentations, and eight sections of designs of front electrode are relative
Should, welding stress is reduced, reduces fragment rate；Each segmentation of back electrode has some sidelines, strengthens connecing for back electrode and back surface field
Touch.
Brief description of the drawings
Fig. 1 is intended to for the structural diagrams of embodiment 1；
Fig. 2 is that segmental structure diagram is intended to；
Wherein：1- silicon chips, 2- segmentations, 3- sidelines.
Embodiment
The technical solution of the utility model is illustrated below in conjunction with specific embodiment.
Embodiment 1
Eight sectional back electrode monocrystaline silicon solar cells as shown in Figure 1-2, including it is welded on being parallel to each other on silicon chip 1
Four main grids, the width of any main grid 1 is 2.2mm, and every main grid is made up of eight evenly spaced segmentations 2, Ren Yifen
The both ends of section 2 are arranged to circular arc type, increase adhesive force, and the length of any segmentation is 8.5mm, the interval between adjacent two segmentations
For 10mm, 8-10 roots sideline 3 is connected between 2 sides of any segmentation and silicon chip 1, the width in sideline 3 is 0.1mm, length is
0.5mm, strengthen contact of the back electrode with back surface field.
The present embodiment effectively enhances the contact between back electrode and substrate, and Rs is reduced into 2.15m by 2.23m Ω
Ω, fill factor, curve factor FF improve 0.11 or so, the photoelectric transformation efficiency lifting more than 0.02% of battery, have very high promotion effect.
Claims (6)
1. a kind of eight sectional back electrode monocrystaline silicon solar cells, including four main grids, it is characterised in that：Every main grid is by eight
Evenly spaced segmentation composition, the both ends of any segmentation are arranged to circular arc type, connected between any segmentation side and silicon chip
There are some sidelines.
2. eight sectional back electrodes monocrystaline silicon solar cell according to claim 1, it is characterised in that：Any segmentation
Length be 8-9mm, width 1.5-2.5mm.
3. eight sectional back electrodes monocrystaline silicon solar cell according to claim 1, it is characterised in that：The main grid is away from silicon
Piece distance from top is 8-9mm.
4. eight sectional back electrodes monocrystaline silicon solar cell according to claim 1, it is characterised in that：The phase of same main grid
Interval between adjacent two segmentations is 8-10mm.
5. eight sectional back electrodes monocrystaline silicon solar cell according to claim 1, it is characterised in that：Any main grid
Width is 1.5-2.5mm.
6. eight sectional back electrodes monocrystaline silicon solar cell according to claim 1, it is characterised in that：The width in the sideline
Spend for 0.1-0.2mm, length 0.5-0.8mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721008690.0U CN207165582U (en) | 2017-08-14 | 2017-08-14 | Eight sectional back electrode monocrystaline silicon solar cells |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721008690.0U CN207165582U (en) | 2017-08-14 | 2017-08-14 | Eight sectional back electrode monocrystaline silicon solar cells |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207165582U true CN207165582U (en) | 2018-03-30 |
Family
ID=61716612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721008690.0U Active CN207165582U (en) | 2017-08-14 | 2017-08-14 | Eight sectional back electrode monocrystaline silicon solar cells |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207165582U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110010708A (en) * | 2019-03-29 | 2019-07-12 | 泰州隆基乐叶光伏科技有限公司 | A kind of solar battery sheet |
-
2017
- 2017-08-14 CN CN201721008690.0U patent/CN207165582U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110010708A (en) * | 2019-03-29 | 2019-07-12 | 泰州隆基乐叶光伏科技有限公司 | A kind of solar battery sheet |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201838602U (en) | Crystalline silicon solar battery with segmented grid lines | |
| CN102931245A (en) | Solar cell front face grid line and solar cell sheet printed with same | |
| CN106847944A (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN207165582U (en) | Eight sectional back electrode monocrystaline silicon solar cells | |
| CN202523721U (en) | Positive grid line electrode structure of improved crystalline silicon cell | |
| CN203941912U (en) | A kind of photovoltaic cell and photovoltaic module | |
| CN209418511U (en) | A kind of four sectional back electrode structure of crystal silicon solar battery | |
| CN103545386A (en) | Solar cell electrode shape | |
| CN207637807U (en) | Solar cell primary gate electrode and solar battery chip | |
| CN203623121U (en) | Monocrystalline silicon solar cell back screen capable of lowering cost and improving conversion efficiency | |
| CN203085565U (en) | Novel solar battery positive electrode | |
| CN203055923U (en) | Solar cell front face grid line and solar cell sheet printed with same | |
| CN106847946A (en) | The back electrode structure and battery of p-type PERC double-sided solar batteries | |
| CN107039545A (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN206628479U (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN203288602U (en) | Current collecting device of novel solar cell slice | |
| CN106981526A (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN206697488U (en) | The backplate and battery of p-type PERC double-sided solar batteries | |
| CN206628475U (en) | The back electrode structure and battery of p-type PERC double-sided solar batteries | |
| CN206301808U (en) | A kind of backside passivation film notching construction for carrying on the back passivating solar battery | |
| CN209561418U (en) | A kind of multicrystalline solar cells | |
| CN204659171U (en) | A kind of crystal silicon solar batteries positive electrode half tone | |
| CN204516780U (en) | Cell piece front gate line structure | |
| CN204696130U (en) | Crystal silicon solar energy battery electrode structure at right side | |
| CN106876494A (en) | The back electrode structure and battery of p-type PERC double-sided solar batteries |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |