CN204696130U - Crystal silicon solar energy battery electrode structure at right side - Google Patents
Crystal silicon solar energy battery electrode structure at right side Download PDFInfo
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- CN204696130U CN204696130U CN201520435629.9U CN201520435629U CN204696130U CN 204696130 U CN204696130 U CN 204696130U CN 201520435629 U CN201520435629 U CN 201520435629U CN 204696130 U CN204696130 U CN 204696130U
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Abstract
The utility model discloses a kind of crystal silicon solar energy battery electrode structure at right side, cell piece front has four main gate line, four main gate line is parallel and four main gate line that are equally spaced are wide isometric, four main gate line are symmetric with cell piece center in cell piece front, described in every root, the width of main gate line is 1.2 millimeters, cell piece front has the many secondary grid lines vertical with main gate line, many secondary grid lines are each other in parallel and equidistantly arrange, main gate line and secondary grid line crisscross, the width of the secondary grid line of every root is 40 ± 2 microns, centre-to-centre spacing between adjacent pair grid line is 1.618 millimeters, the periphery of many secondary grid lines has secondary grid line frame, the line thickness of secondary grid line frame is 0.5 millimeter, secondary four limits of grid line frame and the distance at cell piece edge are all 1.5 millimeters.This crystal silicon solar energy battery electrode structure at right side, under the use amount prerequisite not increasing front surface A g slurry, reduces the contact resistance of positive electrode and silicon chip simultaneously, and then promotes the photoelectric conversion efficiency of solar battery sheet.
Description
Technical field
The utility model belongs to electrode of solar battery design field, is specifically related to a kind of electrode structure at right side of crystal silicon solar energy battery.
Background technology
Solar cell is a kind of device luminous energy being converted into electric energy, because it is clean, pollution-free, inexhaustible, receives increasing concern.
What extensively adopt at present is silicon solar cell, and its manufacturing process is standardization also, and key step is: chemical cleaning and surface structuration process (making herbs into wool)-diffusion-periphery etching-depositing antireflection film-silk screen printing-sintering.Wherein, first silk screen printing carries out the printing of backplate, and slurry is generally Ag slurry, printed back electric field after drying, and slurry is Al slurry, and through turner upset printing front electrode after oven dry, slurry is Ag slurry.For polycrystalline 156 cell piece, front main grid is generally three, and middle one is positioned in the middle of cell piece, and two, edge back electrode is 26mm apart from the distance at cell piece edge, that is is 52mm apart from the distance at two, edge.The Main Function of front main grid is for components provides pad, is conducive to the output of photogenerated current.
Three main grid battery design are also unfavorable for the design of photoelectric current, are also unfavorable for the contact resistance reducing battery simultaneously, cause battery efficiency to can not get promoting, and the encapsulation loss of assembly end is larger.
In addition, Japanese government provided three main grid batterypatents to KYOCERA last year, and this is the potential patent risk that provides the manufacturer of three main grid batteries to bury to Japanese market.
Utility model content
In order to solve the problem, the utility model provides a kind of crystal silicon solar energy battery electrode structure at right side, this crystal silicon solar energy battery electrode structure at right side has four main grids, under the use amount prerequisite not increasing front surface A g slurry, reduce the contact resistance of positive electrode and silicon chip simultaneously, and then promote the photoelectric conversion efficiency of solar battery sheet.
The utility model in order to the technical scheme solving its technical problem and adopt is:
A kind of crystal silicon solar energy battery electrode structure at right side, cell piece front has four main gate line, described four main gate line are parallel and be equally spaced, described four main gate line are wide isometric, described four main gate line are symmetric with cell piece center in cell piece front, described in every root, the width of main gate line is 1.2 millimeters, cell piece front has the many secondary grid lines vertical with main gate line, described many secondary grid lines are parallel each other and equidistantly arrange, described main gate line and secondary grid line crisscross, described in every root, the width of secondary grid line is 40 ± 2 microns, centre-to-centre spacing between adjacent pair grid line is 1.618 millimeters, the periphery of described many secondary grid lines has secondary grid line frame, the line thickness of described secondary grid line frame is 0.5 millimeter, described four limits of secondary grid line frame and the distance at cell piece edge are all 1.5 millimeters.
The utility model in order to the further technical scheme solving its technical problem and adopt is:
Say further, main gate line described in every root is all the main gate line of being starched sintering by silver.
Say further, can be width the be solid wire of 1.2 millimeters of main gate line described in every root or width are the hollow out main gate line of 1.2 millimeters.
Preferably, hollow out main gate line described in every root is all connected and composed by eight sections of solid-section and nine sections of clear bands, described solid-section to be width the be solid-section of 1.2 millimeters, described clear band is 0.2 millimeter by each width in left and right and the solid wire interval that mutual outer back gauge is 1.2 millimeters is formed, and solid-section and clear band interlaced, the two ends of hollow out main gate line are hollow out section, every segment length of all solid-section in every root hollow out main gate line is increased to two ends by main gate line center, every segment length of all clear bands in every root hollow out main gate line to be reduced to two ends by main gate line center and the length being positioned at the hollow out section at main gate line two ends is greater than the length of its preceding paragraph clear band.
Take cell piece as polycrystalline 156 cell piece be example, the center distance between four main gate line is 39 millimeters, and the length of every root main gate line is 153 millimeters.
For described cell piece for polycrystalline 156 cell piece, every segment length of all solid-section in every root hollow out main gate line is 7 millimeters, 7 millimeters, 10 millimeters and 10 millimeters by main gate line center to two ends successively, and every segment length of all clear bands in every root hollow out main gate line is 12 millimeters, 12 millimeters, 8 millimeters, 8 millimeters and 8.5 millimeters by main gate line center to two ends successively.
For described cell piece for polycrystalline 156 cell piece, described secondary grid line has 93.
The beneficial effects of the utility model are: crystal silicon solar energy battery electrode structure at right side of the present utility model mainly have employed four main gate line, four main gate line are parallel and be equally spaced, four main gate line are wide isometric, four main gate line are symmetric with cell piece center in cell piece front, said structure is under the use amount prerequisite not increasing front surface A g slurry, reduce the contact resistance of positive electrode and silicon chip simultaneously, and then promote the photoelectric conversion efficiency of solar battery sheet, four main grid designs make electric current carrying pathway more reasonable, the short circuit current of cell piece promotes to some extent, due to shortening of electric current carrying pathway, series resistance is reduced, battery efficiency is made to improve more than 0.2%, component power improves more than 0.6%, and effectively can reduce the loss of assembly all-in resistance, this product uses conventional batteries technological process manufacture, completely compatible with existing equipment, do not increase new equipment, and be applicable to the conventional sheet of multiple all size, be suitable for promoting the use of.
Accompanying drawing explanation
Fig. 1 is crystal silicon solar energy battery electrode structure at right side schematic diagram of the present utility model (for polysilicon 156 cell piece, hollow out main gate line).
Embodiment
Below by way of specific instantiation, embodiment of the present utility model is described, those skilled in the art can understand advantage of the present utility model and effect easily by content disclosed in the present specification.The utility model also can be implemented in further, different ways, that is, under the category do not disclosed departing from the utility model, can give different modifications and change.
Embodiment: a kind of crystal silicon solar energy battery electrode structure at right side, cell piece front has four main gate line 1, described four main gate line are parallel and be equally spaced, and described four main gate line are wide isometric, and described four main gate line are symmetric with cell piece center in cell piece front.Main gate line described in every root is all the main gate line of being starched sintering by silver.For described cell piece for polycrystalline 156 cell piece, the center distance between four main gate line is 39 millimeters, and the length of every root main gate line is 153 millimeters.
To be width the be hollow out main gate line of 1.2 millimeters of main gate line described in every root, hollow out main gate line described in every root is all connected and composed by eight sections of solid-section 11 and nine sections of clear bands 12, described solid-section to be width the be solid-section of 1.2 millimeters, described clear band is 0.2 millimeter by each width in left and right and the solid wire interval that mutual outer back gauge is 1.2 millimeters is formed, and solid-section and clear band interlaced, the two ends of hollow out main gate line are hollow out section, every segment length of all solid-section in every root hollow out main gate line is increased to two ends by main gate line center, every segment length of all clear bands in every root hollow out main gate line to be reduced to two ends by main gate line center and the length being positioned at the hollow out section at main gate line two ends is greater than the length of its preceding paragraph clear band.For described cell piece for polycrystalline 156 cell piece, every segment length of all solid-section in every root hollow out main gate line is 7 millimeters, 7 millimeters, 10 millimeters and 10 millimeters by main gate line center to two ends successively, and every segment length of all clear bands in every root hollow out main gate line is 12 millimeters, 12 millimeters, 8 millimeters, 8 millimeters and 8.5 millimeters by main gate line center to two ends successively.
Cell piece front has the many secondary grid lines 2 vertical with main gate line, described many secondary grid lines are parallel each other and equidistantly arrange, described main gate line and secondary grid line crisscross, described in every root, the width of secondary grid line is 40 ± 2 microns, and the centre-to-centre spacing between adjacent pair grid line is 1.618 millimeters.
The periphery of described many secondary grid lines has secondary grid line frame 4, and the line thickness of described secondary grid line frame is 0.5 millimeter, and described four limits of secondary grid line frame and the distance at cell piece edge 3 are all 1.5 millimeters.
For described cell piece for polycrystalline 156 cell piece, described secondary grid line has 93.
The silicon chip 200 of same silicon ingot is chosen in experiment, uses the utility model four main grid positive electrode half tone and existing three main grid positive electrode screen painting 100 respectively, compares unit consumption and electrical performance data.
Experimental example: the electrode structure at right side of crystal silicon solar energy battery four main grid of the present utility model
The electrode half tone consistent with the utility model electrode pattern is loaded printing machine, loads onto scraper, returning blade, and add slurry, regulate printing parameter, ensure that the front electrode figure of printing is good, claim hygrometric weight, result is as follows:
| Sampling | 1 | 2 | 3 | 4 | 5 | Mean value |
| Weight in wet base (g) | 0.119 | 0.118 | 0.117 | 0.118 | 0.117 | 0.118 |
Note: weight in wet base is the increase of weight after silicon chip printing
At AM1.5, light intensity 1000W, the situation measuring its unit for electrical property parameters under 25 DEG C of conditions is:
| Voc (open circuit voltage) | Isc (short circuit current) | Rs (series resistance) | FF (fill factor, curve factor) | Eff (photoelectric conversion efficiency) |
| 0.6302 | 8.703 | 2.42 | 79.4 | 17.90％ |
Comparative example: printing parameter is constant, changes existing three primary gate electrode half tones and makes existing three primary gate electrode, and claim hygrometric weight, result is as follows:
| Sampling | 1 | 2 | 3 | 4 | 5 | Mean value |
| Weight in wet base (g) | 0.117 | 0.118 | 0.116 | 0.117 | 0.117 | 0.117 |
At AM1.5, light intensity 1000W, the situation measuring its unit for electrical property parameters under 25 DEG C of conditions is:
| Voc (open circuit voltage) | Isc (short circuit current) | Rs (series resistance) | FF (fill factor, curve factor) | Eff (photoelectric conversion efficiency) |
| 0.6303 | 8.623 | 2.75 | 79.1 | 17.66％ |
As can be seen from above-mentioned experiment, the utility model and prior art unit consumption are suitable, on unit for electrical property parameters, Voc is suitable, but Isc high 80mA, Rs is low 0.33, FF high by 0.3, and whole efficiency improves 0.24%.Visible the utility model improves the conversion efficiency of solar battery sheet to a certain extent.
Above-mentioned specification and embodiment are only exemplary illustration principle of the present utility model and effect thereof, are not to restriction of the present utility model.Any creation fallen in the utility model right all belongs to the scope that the utility model is protected.
Claims (7)
1. a crystal silicon solar energy battery electrode structure at right side, it is characterized in that: cell piece front has four main gate line (1), described four main gate line are parallel and be equally spaced, described four main gate line are wide isometric, described four main gate line are symmetric with cell piece center in cell piece front, described in every root, the width of main gate line is 1.2 millimeters, cell piece front has the many secondary grid lines (2) vertical with main gate line, described many secondary grid lines are parallel each other and equidistantly arrange, described main gate line and secondary grid line crisscross, described in every root, the width of secondary grid line is 40 ± 2 microns, centre-to-centre spacing between adjacent pair grid line is 1.618 millimeters, the periphery of described many secondary grid lines has secondary grid line frame (4), the line thickness of described secondary grid line frame is 0.5 millimeter, four limits of described secondary grid line frame and the distance of cell piece edge (3) are all 1.5 millimeters.
2. crystal silicon solar energy battery electrode structure at right side as claimed in claim 1, is characterized in that: main gate line described in every root is all the main gate line of being starched sintering by silver.
3. crystal silicon solar energy battery electrode structure at right side as claimed in claim 1, is characterized in that: to be width the be solid wire of 1.2 millimeters of main gate line described in every root.
4. crystal silicon solar energy battery electrode structure at right side as claimed in claim 1, it is characterized in that: to be width the be hollow out main gate line of 1.2 millimeters of main gate line described in every root, hollow out main gate line described in every root is all connected and composed by eight sections of solid-section (11) and nine sections of clear bands (12), described solid-section to be width the be solid-section of 1.2 millimeters, described clear band is 0.2 millimeter by each width in left and right and the solid wire interval that mutual outer back gauge is 1.2 millimeters is formed, and solid-section and clear band interlaced, the two ends of hollow out main gate line are hollow out section, every segment length of all solid-section in every root hollow out main gate line is increased to two ends by main gate line center, every segment length of all clear bands in every root hollow out main gate line to be reduced to two ends by main gate line center and the length being positioned at the hollow out section at main gate line two ends is greater than the length of its preceding paragraph clear band.
5. crystal silicon solar energy battery electrode structure at right side as claimed in claim 1, it is characterized in that: described cell piece is polycrystalline 156 cell piece, and the center distance between four main gate line is 39 millimeters, the length of every root main gate line is 153 millimeters.
6. crystal silicon solar energy battery electrode structure at right side as claimed in claim 4, it is characterized in that: described cell piece is polycrystalline 156 cell piece, every segment length of all solid-section in every root hollow out main gate line is 7 millimeters, 7 millimeters, 10 millimeters and 10 millimeters by main gate line center to two ends successively, and every segment length of all clear bands in every root hollow out main gate line is 12 millimeters, 12 millimeters, 8 millimeters, 8 millimeters and 8.5 millimeters by main gate line center to two ends successively.
7. crystal silicon solar energy battery electrode structure at right side as claimed in claim 1, is characterized in that: described cell piece is polycrystalline 156 cell piece, and described secondary grid line has 93.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520435629.9U CN204696130U (en) | 2015-06-24 | 2015-06-24 | Crystal silicon solar energy battery electrode structure at right side |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520435629.9U CN204696130U (en) | 2015-06-24 | 2015-06-24 | Crystal silicon solar energy battery electrode structure at right side |
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| CN204696130U true CN204696130U (en) | 2015-10-07 |
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| CN201520435629.9U Expired - Fee Related CN204696130U (en) | 2015-06-24 | 2015-06-24 | Crystal silicon solar energy battery electrode structure at right side |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108183139A (en) * | 2017-12-20 | 2018-06-19 | 横店集团东磁股份有限公司 | Solar battery sheet |
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2015
- 2015-06-24 CN CN201520435629.9U patent/CN204696130U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108183139A (en) * | 2017-12-20 | 2018-06-19 | 横店集团东磁股份有限公司 | Solar battery sheet |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20151007 Termination date: 20190624 |
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| CF01 | Termination of patent right due to non-payment of annual fee |