CN203774345U - Crystalline silicon solar cell hollow main gate electrode - Google Patents
Crystalline silicon solar cell hollow main gate electrode Download PDFInfo
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- CN203774345U CN203774345U CN201420167712.8U CN201420167712U CN203774345U CN 203774345 U CN203774345 U CN 203774345U CN 201420167712 U CN201420167712 U CN 201420167712U CN 203774345 U CN203774345 U CN 203774345U
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- main grid
- grid line
- silicon solar
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Abstract
The utility model discloses a crystalline silicon solar cell hollow main gate electrode. The crystalline silicon solar cell is a polycrystalline 156 cell piece. The main gate electrode comprises three longitudinal main gate lines and a number of lateral subsidiary gate lines. Three main gate lines are parallel to each other. A number of subsidiary gate lines are parallel to each other. The main gate lines are perpendicular to the subsidiary gate lines. One main gate line is located in the middle of the front of the cell piece. The distance from each of other two main gate lines to the middle main gate line is 52 mm. Each main gate line is composed of eight solid sections and seven blank sections, wherein eight solid sections and seven blank sections are in staggered connection. Through the crystalline silicon solar cell hollow main gate electrode, the cost of the production process of the cell piece is significantly reduced, and the conversion efficiency of solar cell piece is improved to some extent.
Description
Technical field
The utility model belongs to solar battery structure field, is specifically related to a kind of main grid electrode structure of polycrystalline 156 cell pieces.
Background technology
Solar cell is a kind of device that luminous energy is converted into electric energy, because it is clean, pollution-free, inexhaustible, receives increasing concern.
What extensively adopt at present is silicon solar cell, and its manufacturing process is standardization also, and key step is: chemical cleaning and surface structuration processing (making herbs into wool)-diffusion system knot-periphery etching-depositing antireflection film-silk screen printing-sintering.Wherein, first silk screen printing carries out the printing of backplate, and slurry is generally Ag slurry, printed back electric field after drying, and slurry is Al slurry, after oven dry, through turner upset printing front electrode, slurry is Ag slurry.For polycrystalline 156 cell pieces, front main grid is generally three, and is straight line solid electrode.The Main Function of front main grid is for components provides pad, is conducive to the output of photogenerated current.
But, adopt this mode, the unit consumption of front main grid Ag slurry is too large, the control range of weight in wet base is 0.12-0.14g at present, and because the shading-area of positive solid electrode is too large, cause the real light-receiving area of cell piece less, and the contact resistance of positive electrode and silicon chip is larger, the photoelectric conversion efficiency of cell piece is declined.
Utility model content
In order to address the above problem, the utility model provides a kind of crystal silicon solar energy battery hollow type main grid electrode, this crystal silicon solar energy battery hollow type main grid electrode has not only significantly reduced the cost of cell piece production process, has also promoted to a certain extent the conversion efficiency of solar battery sheet.
The utility model for the technical scheme that solves its technical problem and adopt is:
A kind of crystal silicon solar energy battery hollow type main grid electrode, described crystal silicon solar energy battery is polycrystalline 156 cell pieces, described main grid electrode comprises three longitudinal main grid lines and many horizontal secondary grid lines, described three main grid lines are parallel to each other, described many secondary grid lines are parallel to each other, described main grid line is vertical with described secondary grid line, wherein a main grid line is positioned in the middle of cell piece front, all the other two main grid lines are middle 52 millimeters, the main grid line of distance (referring to the distance between main grid line center line) separately, every described main grid line is to be all cross-linked and to be formed by eight sections solid section and seven sections of clear bands.
The utility model for the technical scheme that solves its technical problem and adopt is:
Say further, the width of described main grid line is 1.5 millimeters, and length is 153 millimeters.
Furthermore, the length of solid section that is positioned at head and the tail two ends on every main grid line is done for oneself 14.5 millimeters, and all the other length of six sections solid section are respectively done for oneself 9 millimeters, and the length of seven sections of clear bands is respectively done for oneself 10 millimeters.
Furthermore, solid section that on described main grid line, is positioned at head and the tail two ends is to be all made up of the rectangular section of 9 millimeters long and the isosceles trapezoid section of 5.5 millimeters long separately, and isosceles trapezoid section is positioned at the end of described main grid line, and the outer end width of isosceles trapezoid section is 0.5 millimeter.
Say further, on described main grid line, the left and right sides of every section of clear band all has a pair of connection grid line, every pair connect grid line by two connect grid lines form, and two connect grating spacing be 0.08 millimeter, the two ends of described connection grid line are connected in described solid section.
The beneficial effects of the utility model are: crystal silicon solar energy battery hollow type main grid electrode of the present utility model, because its main grid line comprises clear band, hollow parts in described clear band no longer needs filled conductive slurry, therefore, saved electrocondution slurry, the unit consumption of the utility model hollow type main grid electrode screen painting is 0.10-0.12g, and the unit consumption scope of existing linear electrode is 0.12-0.14g, the unit consumption about 10%-20% that declines, has reduced the manufacturing cost of solar battery sheet; And clear band can reduce positive electrode and cover the area on silicon chip, reduce the contact resistance of positive electrode and silicon chip, improve the photoelectric conversion efficiency of solar battery sheet.
Brief description of the drawings
Fig. 1 is structural representation of the present utility model;
Fig. 2 is the A portion enlarged drawing of Fig. 1.
Embodiment
By specific instantiation, embodiment of the present utility model is described below, those skilled in the art can understand advantage of the present utility model and effect easily by content disclosed in the present specification.The utility model also can other different mode be implemented, and, under the category not disclosing departing from the utility model, can give different modifications and change that is.
Embodiment: a kind of crystal silicon solar energy battery hollow type main grid electrode, described crystal silicon solar energy battery is polycrystalline 156 cell pieces, described main grid electrode comprises three longitudinal main grid lines 1 and many horizontal secondary grid lines, described three main grid lines are parallel to each other, described many secondary grid lines are parallel to each other, described main grid line is vertical with described secondary grid line, wherein a main grid line is positioned in the middle of cell piece front, all the other two main grid lines are middle 52 millimeters, the main grid line of distance (referring to the distance between main grid line center line) separately, every described main grid line is to be all cross-linked and to be formed by eight sections solid section 11 and seven sections of clear bands 12.
The width of described main grid line is 1.5 millimeters, and length is 153 millimeters.
The length of solid section that is positioned at head and the tail two ends on every main grid line is done for oneself 14.5 millimeters, and all the other length of six sections solid section are respectively done for oneself 9 millimeters, and the length of seven sections of clear bands is respectively done for oneself 10 millimeters.
On described main grid line, be positioned at head and the tail solid section of two ends and be all separately by the isosceles trapezoid section 112 of rectangular section 111 and 5.5 millimeters long of 9 millimeters long and form, and isosceles trapezoid section is positioned at the end of described main grid line, and the outer end width of isosceles trapezoid section is 0.5 millimeter.
On described main grid line, the left and right sides of every section of clear band all has a pair of connection grid line, every pair connect grid line by two connect grid lines 13 form, and two connect grating spacing be 0.08 millimeter, the two ends of described connection grid line are connected in described solid section.
200 of the silicon chips of same silicon ingot are chosen in experiment, use respectively each 100 of hollow out positive electrode half tone and existing straight line positive electrode screen painting, relatively unit consumption and electrical performance data.
The utility model experimental example: the utility model hollow type main grid electrode
Pack the main grid electrode half tone consistent with the utility model main grid electrode pattern into printing machine, load onto scraper, returning blade, and add slurry, regulate printing parameter, the main grid electrode pattern that ensures printing is good, claims hygrometric heavy (weight in wet base is the increase of weight after silicon chip printing), and result is as follows:
| Sampling | 1 | 2 | 3 | 4 | 5 | Mean value |
| Weight in wet base (g) | 0.105 | 0.104 | 0.103 | 0.104 | 0.103 | 0.104 |
At AM1.5, light intensity 1000W, the situation of measuring its unit for electrical property parameters under 25 DEG C of conditions is:
| Voc(open circuit voltage) | Isc(short circuit current) | FF(fill factor, curve factor) | Eff(photoelectric conversion efficiency) |
| 0.629 | 8.683 | 78.6 | 17.64% |
Comparative example: printing parameter is constant, changes existing linear electrode half tone and makes existing orthoscopic main grid electrode, claims hygrometric weight, and result is as follows:
| Sampling | 1 | 2 | 3 | 4 | 5 | Mean value |
| Weight in wet base (g) | 0.127 | 0.128 | 0.126 | 0.127 | 0.127 | 0.127 |
At AM1.5, light intensity 1000W, the situation of measuring its unit for electrical property parameters under 25 DEG C of conditions is:
| Voc(open circuit voltage) | Isc(short circuit current) | FF(fill factor, curve factor) | Eff(photoelectric conversion efficiency) |
| 0.628 | 8.655 | 78.8 | 17.60% |
Can find out from above-mentioned experimental result, the utility model unit consumption approximately reduces by 18%, and on unit for electrical property parameters, fill factor, curve factor has been compared low 0.2, but short circuit current height 28mA, promote obviously, in whole efficiency, improve 0.04%.Visible, this utility model has not only significantly reduced the cost of cell piece production process, has promoted to a certain extent the conversion efficiency of solar battery sheet.
Claims (5)
1. a crystal silicon solar energy battery hollow type main grid electrode, described crystal silicon solar energy battery is polycrystalline 156 cell pieces, described main grid electrode comprises three longitudinal main grid lines (1) and many horizontal secondary grid lines, described three main grid lines are parallel to each other, described many secondary grid lines are parallel to each other, described main grid line is vertical with described secondary grid line, it is characterized in that: wherein a main grid line is positioned in the middle of cell piece front, all the other two main grid lines are separately apart from 52 millimeters, a middle main grid line, every described main grid line is to be all cross-linked and to be formed by eight sections solid section (11) and seven sections of clear bands (12).
2. crystal silicon solar energy battery hollow type main grid electrode as claimed in claim 1, is characterized in that: the width of described main grid line is 1.5 millimeters, and length is 153 millimeters.
3. crystal silicon solar energy battery hollow type main grid electrode as claimed in claim 2, it is characterized in that: the length of solid section that is positioned at head and the tail two ends on every main grid line is done for oneself 14.5 millimeters, all the other length of six sections solid section are respectively done for oneself 9 millimeters, and the length of seven sections of clear bands is respectively done for oneself 10 millimeters.
4. crystal silicon solar energy battery hollow type main grid electrode as claimed in claim 3, it is characterized in that: solid section that on described main grid line, is positioned at head and the tail two ends is to be all made up of the rectangular section (111) of 9 millimeters long and the isosceles trapezoid section (112) of 5.5 millimeters long separately, and isosceles trapezoid section is positioned at the end of described main grid line, and the outer end width of isosceles trapezoid section is 0.5 millimeter.
5. crystal silicon solar energy battery hollow type main grid electrode as claimed in claim 1, it is characterized in that: on described main grid line, the left and right sides of every section of clear band all has a pair of connection grid line, every pair connects grid line and connects grid line (13) formation by two, and two connect grating spacing is 0.08 millimeter, and the two ends of described connection grid line are connected in described solid section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420167712.8U CN203774345U (en) | 2014-04-08 | 2014-04-08 | Crystalline silicon solar cell hollow main gate electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420167712.8U CN203774345U (en) | 2014-04-08 | 2014-04-08 | Crystalline silicon solar cell hollow main gate electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203774345U true CN203774345U (en) | 2014-08-13 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420167712.8U Expired - Fee Related CN203774345U (en) | 2014-04-08 | 2014-04-08 | Crystalline silicon solar cell hollow main gate electrode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904144A (en) * | 2014-04-08 | 2014-07-02 | 江苏欧耐尔新型材料有限公司 | Hollowed master gate electrode of crystalline silicon solar cell |
-
2014
- 2014-04-08 CN CN201420167712.8U patent/CN203774345U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103904144A (en) * | 2014-04-08 | 2014-07-02 | 江苏欧耐尔新型材料有限公司 | Hollowed master gate electrode of crystalline silicon solar cell |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140813 Termination date: 20190408 |
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| CF01 | Termination of patent right due to non-payment of annual fee |