CN203013743U - Crystalline silica solar right side main grid electrode - Google Patents
Crystalline silica solar right side main grid electrode Download PDFInfo
- Publication number
- CN203013743U CN203013743U CN 201220660346 CN201220660346U CN203013743U CN 203013743 U CN203013743 U CN 203013743U CN 201220660346 CN201220660346 CN 201220660346 CN 201220660346 U CN201220660346 U CN 201220660346U CN 203013743 U CN203013743 U CN 203013743U
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- Prior art keywords
- main grid
- crystalline silica
- grid lines
- electrode
- grid electrode
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- 229910002026 crystalline silica Inorganic materials 0.000 title abstract 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 6
- 235000012239 silicon dioxide Nutrition 0.000 title abstract 6
- 239000007787 solid Substances 0.000 claims abstract description 15
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 11
- 235000009808 lpulo Nutrition 0.000 claims description 9
- 239000002002 slurry Substances 0.000 abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000007639 printing Methods 0.000 description 9
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 208000008425 Protein Deficiency Diseases 0.000 description 1
- 210000002268 Wool Anatomy 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001737 promoting Effects 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
Abstract
The utility model relates to the crystalline silica solar cell technology field and especially relates to a crystalline silica sun right side main grid electrode. The crystalline silica sun right side main grid electrode comprises three main grid lines and a plurality of secondary grid lines perpendicular to the main grid lines, wherein the main grid lines are arranged parallelly with equal intervals, and the main grid lines comprise hollow-out segments and solid segments connected with the hollow-out segments. When the crystalline silica sun right side main grid electrode is used, the main grid lines comprise the hollow-out segments, so a covered area by a positive electrode on a silicon chip is reduced, and contact resistance of the positive electrode and the silicon chip is reduced, and thereby photoelectric conversion efficiency of a solar cell is improved, moreover, hollow portions of the hollow-out segments are not needed to fill conductive slurry, so conductive slurry is saved, and manufacturing cost of the solar cell is reduced. The crystalline silica sun right side main grid electrode has advantages of simple structure, reasonable arrangement and low manufacturing cost.
Description
Technical field
The utility model relates to filed of crystal silicon solaode technique, particularly a kind of crystalline silicon sun front main grid electrode.
Background technology
Solar cell is a kind of device that luminous energy is converted into electric energy, due to its cleaning, pollution-free, inexhaustible, receives increasing concern.What extensively adopt at present is silicon solar cell, and its manufacturing process is standardization also, and key step is: chemical cleaning and surface structuration are processed (making herbs into wool)-diffusion system knot-peripheral etching-depositing antireflection film-silk screen printing-sintering.Wherein, at first silk screen printing carries out the printing of backplate, and slurry is generally the Ag/Al slurry, and printed back electric field after oven dry, slurry are the Al slurry, and after oven dry, through turner upset printing front electrode, slurry is the Ag slurry.For polycrystalline 156 cell pieces, the front main grid is generally three, and middle one is positioned in the middle of cell piece, and two, edge back electrode is 26mm apart from the distance at cell piece edge,, that is the distance of two is 52mm apart from the edge.The Main Function of front main grid is for components provides pad, is conducive to the output of photogenerated current.
Yet, adopt aforesaid way, the unit consumption of front main grid Ag slurry is too large, the control range of weight in wet base is 0.13-0.15g at present, and because the shading-area of front main grid is too large, cause the real light-receiving area of cell piece less, and the contact resistance of positive electrode and silicon chip is larger, the photoelectric conversion efficiency of cell piece is descended.
The utility model content
The purpose of this utility model is for the defective of prior art and deficiency, provide a kind of positive electrode that reduces to cover area on silicon chip, reduce the contact resistance of positive electrode and silicon chip, improve the crystalline silicon sun front main grid electrode of the photoelectric conversion efficiency of solar battery sheet.
For achieving the above object, the technical solution adopted in the utility model is:
A kind of crystalline silicon sun described in the utility model front main grid electrode, comprise three main grid lines and many secondary grid lines vertical with described main grid line, described main grid line is equidistant and be arranged in parallel, and described main grid line comprises hollow out section, be connected with described hollow out section solid section.
Further, the length L 1 of described solid section is 1.5～1.7mm, and width W 1 is 0.1～0.3mm.
Further, the length L 2 of described hollow out section is 1.1～1.3mm, and width W 2 is 0.1～0.2mm.
Further, the hop count of described hollow out section is 140～150, and the hop count of described solid section equates with the hop count of hollow out section.
After adopting said structure, the utility model beneficial effect is: a kind of crystalline silicon sun described in the utility model front main grid electrode, comprise three main grid lines and many secondary grid lines vertical with described main grid line, described main grid line is equidistant and be arranged in parallel, and described main grid line comprises hollow out section, be connected with described hollow out section solid section; When using the utility model, because its main grid line comprises the hollow out section, therefore, can reduce positive electrode and cover area on silicon chip, reduce the contact resistance of positive electrode and silicon chip, the photoelectric conversion efficiency of raising solar battery sheet; And the hollow parts in described hollow out section no longer needs the filled conductive slurry, therefore, has saved electrocondution slurry, has reduced the manufacturing cost of solar battery sheet.The utlity model has simple in structurely, arrange rationally, the advantage such as cost of manufacture is low.
Description of drawings
Fig. 1 is structural representation of the present utility model;
Fig. 2 is the structure for amplifying schematic diagram of A section in Fig. 1;
Description of reference numerals:
1, main grid line; 2, secondary grid line; 3, hollow out section; 4, solid section;
L1, the length of solid section; The length of L2, hollow out section; W1, solid section wide;
W2, hollow out section wide.
Embodiment
Below in conjunction with accompanying drawing, the utility model is further described.
As shown in Figure 1 and Figure 2, a kind of crystalline silicon sun described in the utility model front main grid electrode, comprise three main grid lines 1 and many secondary grid lines 2 vertical with described main grid line 1, described main grid line 1 is equidistant and be arranged in parallel, and described main grid line 1 comprises hollow out section 3, be connected with described hollow out section 3 solid section 4; In the present embodiment, use this front main grid design, can effectively reduce the unit consumption of positive electrode Ag slurry, increase the light-receiving area of cell piece, reduce the contact resistance of positive electrode and silicon chip, and then promote the photoelectric conversion efficiency of solar battery sheet, adopt said structure, the utlity model has following advantage: unit consumption is low: the unit consumption scope of this novel segmentation screen painting is 0.11-0.13g, and the unit consumption scope of existing linear electrode is 0.13-0.15g, and unit consumption decline is 10%-20% approximately; Short circuit current promotes to some extent: due to the use of hollow out main grid electrode, the printing area of front electrode reduces, thereby the light-receiving area of cell piece is increased, and the short circuit current of cell piece promotes to some extent; And the utility model need not to increase any equipment frock, both has been applicable to the plurality of devices of different class, is applicable to again the conventional sheet of multiple all size, is suitable for promoting the use of.
As a kind of optimal way of the present utility model, the length L 1 of described solid section 4 is 1.5～1.7mm, and width W 1 is 0.1～0.3mm, and in the utility model, length L 1 is preferably 1.6mm, and width W 1 is preferably 0.2mm.
As a kind of optimal way of the present utility model, the length L 2 of described hollow out section 3 is 1.1～1.3mm, and width W 2 is 0.1～0.2mm, and in the utility model, length L 2 is preferably 1.2mm, and width W 2 is preferably 0.15mm.
As a kind of optimal way of the present utility model, the hop count of described hollow out section 3 is 140～150, and the hop count of described solid section 4 equates with the hop count of hollow out section 3.
Add slurry when printing with the utility model on half tone, frictioning applies certain pressure to half tone, moves towards the half tone other end simultaneously.Slurry is expressed to from mesh in movement on stock, and set within limits due to viscous effect.Owing to keeping certain gap between half tone and stock, half tone passes through the tension force generation of self to the resilience force of frictioning, make half tone and stock only be portable line and contact, and other parts and stock is disengaged position, slurry and the motion of silk screen fracture have guaranteed the printed dimensions precision.Frictioning lifted after scraping the whole space of a whole page, and half tone also lifts simultaneously, and by returning blade, slurry is gently scraped back initial position, completes a print stroke.In addition, this is simple in structure, reasonable in design, low cost of manufacture.
The silicon chip 200PCS of same silicon ingot is chosen in the below's experiment, respectively with hollow out positive electrode half tone and existing straight line positive electrode screen painting 100pcs, relatively unit consumption and electrical performance data.
Experimental example one: a kind of crystalline silicon sun front main grid electrode
With the Novel main gate electrode half tone printing machine of packing into, load onto scraper, returning blade, and add slurry, regulate printing parameter, guarantee that the back electrode figure of printing is good, claim hygrometric heavy, result is as follows:
Annotate: weight in wet base is the increase of weight after the silicon chip printing
At AM1.5, light intensity 1000W, the situation of measuring its unit for electrical property parameters under 25 ℃ of conditions is:
Experimental example two:
Printing parameter is constant, changes existing linear electrode half tone, claims hygrometric heavy, and result is as follows:
At AM1.5, light intensity 1000W, the situation of measuring its unit for electrical property parameters under 25 ℃ of conditions is:
Can find out from above-mentioned experiment, use segmentation back electrode half tone unit consumption approximately to reduce by 13%, on unit for electrical property parameters, fill factor, curve factor has been compared low 0.2, but the short circuit current height 40mA, promote obviously, improve 0.07% on whole efficiency.As seen, the utility model has not only reduced the cost of cell piece production process, has promoted to a certain extent the conversion efficiency of solar battery sheet.
The above is only better embodiment of the present utility model, therefore all equivalences of doing according to the described structure of the utility model patent claim, feature and principle change or modify, is included in the utility model patent claim.
Claims (4)
1. crystalline silicon sun front main grid electrode, comprise three main grid lines (1) and many secondary grid lines (2) vertical with described main grid line (1), described main grid line (1) is equidistant and be arranged in parallel, it is characterized in that, described main grid line (1) comprises hollow out section (3), solid section (4) being connected with described hollow out section (3).
2. a kind of crystalline silicon sun according to claim 1 front main grid electrode, it is characterized in that: the length of described solid section (4) (L1) is 1.5～1.7mm, the width of solid section (4) (W1) is 0.1～0.3mm.
3. a kind of crystalline silicon sun according to claim 1 front main grid electrode, it is characterized in that: the length (L2) of described hollow out section (3) is 1.1～1.3mm, hollow out section (3) width (W2) be 0.1～0.2mm.
4. a kind of crystalline silicon sun according to claim 1 front main grid electrode, it is characterized in that: the hop count of described hollow out section (3) is 140～150, the hop count of described solid section (4) equates with the hop count of hollow out section (3).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220660346 CN203013743U (en) | 2012-12-05 | 2012-12-05 | Crystalline silica solar right side main grid electrode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220660346 CN203013743U (en) | 2012-12-05 | 2012-12-05 | Crystalline silica solar right side main grid electrode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203013743U true CN203013743U (en) | 2013-06-19 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220660346 Expired - Fee Related CN203013743U (en) | 2012-12-05 | 2012-12-05 | Crystalline silica solar right side main grid electrode |
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| CN (1) | CN203013743U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108550638A (en) * | 2018-06-25 | 2018-09-18 | 浙江晶科能源有限公司 | A kind of solar energy laminated batteries and solar energy stacked wafer moudle |
-
2012
- 2012-12-05 CN CN 201220660346 patent/CN203013743U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108550638A (en) * | 2018-06-25 | 2018-09-18 | 浙江晶科能源有限公司 | A kind of solar energy laminated batteries and solar energy stacked wafer moudle |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130619 Termination date: 20161205 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |