CN204792813U - Brilliant silicon solar cell positive electrode and solar cell - Google Patents

Brilliant silicon solar cell positive electrode and solar cell Download PDF

Info

Publication number
CN204792813U
CN204792813U CN201520522363.1U CN201520522363U CN204792813U CN 204792813 U CN204792813 U CN 204792813U CN 201520522363 U CN201520522363 U CN 201520522363U CN 204792813 U CN204792813 U CN 204792813U
Authority
CN
China
Prior art keywords
isosceles trapezoid
positive electrode
solar cell
grid line
main gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201520522363.1U
Other languages
Chinese (zh)
Inventor
黄玉平
秦崇德
方结彬
石强
何达能
陈刚
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Guangdong Asahi Polytron Technologies Inc
Zhejiang love Solar Energy Technology Co., Ltd.
Original Assignee
Guangdong Aiko Solar Energy Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guangdong Aiko Solar Energy Technology Co Ltd filed Critical Guangdong Aiko Solar Energy Technology Co Ltd
Priority to CN201520522363.1U priority Critical patent/CN204792813U/en
Application granted granted Critical
Publication of CN204792813U publication Critical patent/CN204792813U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The utility model discloses a brilliant silicon solar cell positive electrode belongs to solar cell technical field, including one at least main grid line 1 and many with the vice grid line 2 of 1 vertically on the main grid line, the 2nd isosceles trapezoid 12 that the main grid line 1 that lies in 2 vice grid lines is connected including the isosceles trapezoid 11 that lies in the tip respectively, with an isosceles trapezoid 11, with the 3rd isosceles trapezoid 13 that the 2nd isosceles trapezoid 12 is connected, still include in the middle part of lieing in with the fourth isosceles trapezoid 15 that the 3rd isosceles trapezoid 13 is connected, fourth isosceles trapezoid 15 is connected with the 3rd isosceles trapezoid 13 again, and both link to each other at the interval in proper order. The utility model also provides a solar cell including above -mentioned positive electrode. Through the main grid line 1 that sets up trapezoidal form, can reduce positive electrode silver paste's consumption, promote solar wafer's photoelectric conversion efficiency, the grid line overall arrangement is reformed transform simply on this positive electrode, can effectively realize reduction in production cost, promote conversion efficiency's purpose, is applicable to a large amount of popularizations.

Description

A kind of crystal silicon solar batteries positive electrode and solar cell
Technical field
The utility model relates to a kind of positive electrode, and particularly a kind of crystal silicon solar batteries positive electrode and solar cell, belong to technical field of solar batteries.
Background technology
Solar cell power generation utilizes solar cell that solar energy is converted into electric energy, because it is Green Product, can not environmental pollution be caused, and be renewable resource, so under current energy starved situation, solar cell is a kind of novel energy having broad based growth future.
The Making programme of crystal-silicon solar cell comprises: making herbs into wool, diffusion, etching, PECVD, silk screen printing, sintering and testing, sorting.Transform light energy is becoming in the process of electric energy by solar battery sheet, and its inner photo-generated carrier produced needs the electrode printed by outside collect and draw, and is then connected with external circuit, thus is transported out by electric current.Above-mentioned silkscreen process is further subdivided into again back electrode printing, the back of the body electric field printing and positive electrode printing of solar cell.Positive electrode screen painting, on crystal silicon solar battery front, through oversintering, plays the effect of collected current.Therefore, the design of electrode pattern determines the printing of silver slurry and the collecting effect of electric current, determines the waste of silver slurry, the final photoelectric conversion efficiency determining solar cell simultaneously.
For manufacturing enterprise, reduce battery cost, improve the Main way that conversion efficiency is solar cell development, and take which kind of positive electrode pattern design to be crucial.The grid line layout of current conventional solar battery sheet positive electrode as shown in Figure 1, positive electrode is by the main gate line 1 for derived current, vertical with described main gate line 1 forms for the secondary grid line 2 collecting photo-generated carrier, described each bar main gate line 1 is parallel to each other, described many secondary grid lines 2 are parallel between two, and described main gate line 1 is wider than the width of described secondary grid line 2, use middle discovery, as shown in Figure 2, main gate line 1 is successively by the isosceles trapezoid 1 of end, isosceles trapezoid 2 12, some square 14 compositions at isosceles trapezoid 3 13 and middle part, the width of above-mentioned figure is all larger, cause shading-area larger, cause the contact resistance between grid line and silicon chip higher simultaneously, both can reduce the conversion efficiency of cell piece, in addition, need silver slurry as electrocondution slurry when printing electrode, the area that main gate line covers on silicon chip also must make the use of slurry increase comparatively greatly, and the cost of manufacture of solar battery sheet can be caused higher.
Summary of the invention
For above-mentioned prior art Problems existing, the utility model provides a kind of crystal silicon solar batteries positive electrode, structure is simple, can reduce silver slurry consumption in silk screen printing, increases solar battery sheet surface light absorption area simultaneously, promotes conversion efficiency of solar cell.The utility model additionally provides a kind of solar cell comprising above-mentioned positive electrode.
To achieve these goals, a kind of crystal silicon solar batteries positive electrode that the utility model adopts, comprise main gate line and many secondary grid lines vertical with described main gate line of at least one, the main gate line be positioned between secondary grid line comprises the first isosceles trapezoid laying respectively at end, the second isosceles trapezoid be connected with the first isosceles trapezoid, the 3rd isosceles trapezoid that is connected with the second isosceles trapezoid, also comprise the 4th isosceles trapezoid be connected with the 3rd isosceles trapezoid being positioned at middle part, described 4th isosceles trapezoid is connected with the 3rd isosceles trapezoid again, and both are connected at interval successively.
As improvement, the bottom of described first isosceles trapezoid and the upper base of the second isosceles trapezoid are overlapped in same secondary grid line, the bottom of described second isosceles trapezoid and the upper base of the 3rd isosceles trapezoid are overlapped in same secondary grid line, and the bottom of described 3rd isosceles trapezoid and the bottom of the 4th isosceles trapezoid are overlapped in same secondary grid line.
As improvement, this positive electrode comprises three main gate line and 99 secondary grid lines vertical with described main gate line.
As improvement, this positive electrode comprises four main gate line and 102 secondary grid lines vertical with described main gate line.
As improvement, each bar main gate line is parallel to each other, and the secondary grid line of each bar is parallel between two.
As improvement, the upper bottom side length of described first isosceles trapezoid is 0.2mm, and the length of side of going to the bottom is 0.6mm.
As improvement, the upper bottom side length of described second isosceles trapezoid is 0.6mm, and the length of side of going to the bottom is 1.0mm.
As improvement, the upper bottom side length of described 3rd isosceles trapezoid is 1.0mm, and the length of side of going to the bottom is 1.4mm.
As improvement, the upper bottom side length of described 4th isosceles trapezoid is 1.0mm, and the length of side of going to the bottom is 1.4mm.
In addition, the utility model additionally provides a kind of solar cell, comprises solar cell positive electrode, the crystal silicon solar batteries positive electrode described in the very above-mentioned any one of described positive electricity.
Implement the utility model, there is following beneficial effect:
The utility model provides a kind of crystal silicon solar batteries positive electrode, by arranging the main gate line of trapezoidal shape, the consumption of positive electrode silver slurry can be reduced, increase solar battery sheet surface light irradiated area, improve short circuit current, promote the photoelectric conversion efficiency of solar battery sheet, on this positive electrode, grid line Layout changing is simple, the object effectively can realize reducing production cost, promoting conversion efficiency, is applicable to large-scale popularization.
In addition, the utility model additionally provides a kind of solar cell, and because this battery comprises above-mentioned crystal silicon solar batteries positive electrode, therefore when described positive electrode has above-mentioned beneficial effect, this solar cell also has corresponding beneficial effect.
Accompanying drawing explanation
Fig. 1 is crystal silicon solar batteries positive electrode structure schematic diagram in prior art;
Fig. 2 is the partial enlarged drawing at A place in Fig. 1;
Fig. 3 is crystal silicon solar batteries positive electrode structure schematic diagram of the present utility model;
Fig. 4 is the partial enlarged drawing at B place in Fig. 3;
In figure: 1, main gate line, the 11, first isosceles trapezoid, the 12, second isosceles trapezoid, the 13, the 3rd isosceles trapezoid, 14, square, the 15, the 4th isosceles trapezoid, 2, secondary grid line.
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearly understand, below by accompanying drawing and embodiment, the utility model is further elaborated.
As shown in Figure 3 and Figure 4, a kind of crystal silicon solar batteries positive electrode, comprise main gate line 1 and many secondary grid lines 2 vertical with described main gate line 1 of at least one, the main gate line 1 be positioned between secondary grid line 2 comprises the first isosceles trapezoid 11 laying respectively at end, the second isosceles trapezoid 12 be connected with the first isosceles trapezoid 11, the 3rd isosceles trapezoid 13 that is connected with the second isosceles trapezoid 12, also comprise the 4th isosceles trapezoid 15 be connected with the 3rd isosceles trapezoid 13 being positioned at middle part, described 4th isosceles trapezoid 15 is connected with the 3rd isosceles trapezoid 13 again, and both are connected at interval successively.
As the improvement of embodiment, the upper base of the bottom and the second isosceles trapezoid 12 that are positioned at the first isosceles trapezoid 11 of main gate line 1 end is overlapped in same secondary grid line 2, the bottom of described second isosceles trapezoid 12 and the upper base of the 3rd isosceles trapezoid 13 are overlapped in same secondary grid line 2, the bottom of described 3rd isosceles trapezoid 13 and the bottom of the 4th isosceles trapezoid 15 are overlapped in same secondary grid line 2, by by the first isosceles trapezoid 11 connected successively, second isosceles trapezoid 12, the 3rd isosceles trapezoid 13 that some intervals are connected coordinates with the 4th isosceles trapezoid 15 and forms main gate line 1, the 3rd isosceles trapezoid 13 be wherein connected by interval successively and the 4th isosceles trapezoid 15 replace square 14 of original constant dimension, the surface light irradiated area of crystal silicon solar batteries of the present utility model is increased, improve short circuit current, promote the photoelectric conversion efficiency of solar battery sheet.
In a kind of embodiment of the present utility model, this positive electrode comprises three main gate line 1 and 99 secondary grid lines 2 vertical with described main gate line 1, transforms easy to process, use simple, photoelectric conversion efficiency is high.
In addition, according to actual production demand, also this positive electrode be can design and four main gate line 1 and 102 secondary grid lines 2 vertical with described main gate line 1 comprised, and each bar main gate line 1 is parallel to each other, the secondary grid line 2 of each bar is parallel between two, effectively collect photo-generated carrier by secondary grid line 2, then through main gate line 1 derived current.
As the improvement of embodiment, the upper bottom side length of described first isosceles trapezoid 11 is 0.2mm, and the length of side of going to the bottom is 0.6mm; The upper bottom side length that can also adopt the second isosceles trapezoid 12 is 0.6mm, and the length of side of going to the bottom is 1.0mm; The upper bottom side length that can also adopt the 3rd isosceles trapezoid 13 is 1.0mm, and the length of side of going to the bottom is 1.4mm, and easy to process, structure is simple.
As the improvement of embodiment, the upper bottom side length of described 4th isosceles trapezoid 15 is 1.0mm, the length of side of going to the bottom is 1.4mm, compared with original square 14, to be coordinated with the 4th isosceles trapezoid 15 by the 3rd isosceles trapezoid 13 and reduce shading-area, reduce the contact resistance between grid line and silicon chip simultaneously, and then improve the conversion efficiency of cell piece.
In addition, the utility model additionally provides a kind of solar cell, comprise solar cell positive electrode, crystal silicon solar batteries positive electrode described in the very above-mentioned any one of described positive electricity, by using this positive electrode, effectively reduce silver slurry consumption in silk screen printing, add solar battery sheet surface light absorption area simultaneously, promote conversion efficiency of solar cell.
The foregoing is only preferred embodiment of the present utility model; not in order to limit the utility model; all do within spirit of the present utility model and principle any amendment, equivalent to replace or improvement etc., all should be included within protection range of the present utility model.

Claims (10)

1. a crystal silicon solar batteries positive electrode, comprise main gate line (1) and many secondary grid lines (2) vertical with described main gate line (1) of at least one, the main gate line (1) be positioned between secondary grid line (2) comprises the first isosceles trapezoid (11) laying respectively at end, the second isosceles trapezoid (12) be connected with the first isosceles trapezoid (11), the 3rd isosceles trapezoid (13) be connected with the second isosceles trapezoid (12), it is characterized in that: also comprise the 4th isosceles trapezoid (15) be connected with the 3rd isosceles trapezoid (13) being positioned at middle part, described 4th isosceles trapezoid (15) is connected with the 3rd isosceles trapezoid (13) again, both are connected at interval successively.
2. a kind of crystal silicon solar batteries positive electrode according to claim 1, it is characterized in that, the bottom of described first isosceles trapezoid (11) and the upper base of the second isosceles trapezoid (12) are overlapped in same secondary grid line, the bottom of described second isosceles trapezoid (12) and the upper base of the 3rd isosceles trapezoid (13) are overlapped in same secondary grid line, and the bottom of described 3rd isosceles trapezoid (13) and the bottom of the 4th isosceles trapezoid (15) are overlapped in same secondary grid line.
3. a kind of crystal silicon solar batteries positive electrode according to claim 2, is characterized in that, this positive electrode comprises three main gate line (1) and 99 secondary grid lines (2) vertical with described main gate line (1).
4. a kind of crystal silicon solar batteries positive electrode according to claim 2, is characterized in that, this positive electrode comprises four main gate line (1) and 102 secondary grid lines (2) vertical with described main gate line (1).
5. a kind of crystal silicon solar batteries positive electrode according to claim 3 or 4, is characterized in that, each bar main gate line (1) is parallel to each other, and the secondary grid line (2) of each bar is parallel between two.
6. a kind of crystal silicon solar batteries positive electrode according to claim 3 or 4, is characterized in that, the upper bottom side length of described first isosceles trapezoid (11) is 0.2mm, and the length of side of going to the bottom is 0.6mm.
7. a kind of crystal silicon solar batteries positive electrode according to claim 3 or 4, is characterized in that, the upper bottom side length of described second isosceles trapezoid (12) is 0.6mm, and the length of side of going to the bottom is 1.0mm.
8. a kind of crystal silicon solar batteries positive electrode according to claim 3 or 4, is characterized in that, the upper bottom side length of described 3rd isosceles trapezoid (13) is 1.0mm, and the length of side of going to the bottom is 1.4mm.
9. a kind of crystal silicon solar batteries positive electrode according to claim 1, is characterized in that, the upper bottom side length of described 4th isosceles trapezoid is 1.0mm, and the length of side of going to the bottom is 1.4mm.
10. a solar cell, comprises solar cell positive electrode, it is characterized in that, the crystal silicon solar batteries positive electrode of described positive electricity very described in any one of claim 1-9.
CN201520522363.1U 2015-07-18 2015-07-18 Brilliant silicon solar cell positive electrode and solar cell Active CN204792813U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201520522363.1U CN204792813U (en) 2015-07-18 2015-07-18 Brilliant silicon solar cell positive electrode and solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201520522363.1U CN204792813U (en) 2015-07-18 2015-07-18 Brilliant silicon solar cell positive electrode and solar cell

Publications (1)

Publication Number Publication Date
CN204792813U true CN204792813U (en) 2015-11-18

Family

ID=54532806

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201520522363.1U Active CN204792813U (en) 2015-07-18 2015-07-18 Brilliant silicon solar cell positive electrode and solar cell

Country Status (1)

Country Link
CN (1) CN204792813U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021008474A1 (en) * 2019-07-16 2021-01-21 苏州携创新能源科技有限公司 Solar cell and photovoltaic module

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021008474A1 (en) * 2019-07-16 2021-01-21 苏州携创新能源科技有限公司 Solar cell and photovoltaic module

Similar Documents

Publication Publication Date Title
CN202076274U (en) Four-'hui' type positive electrode structure for solar battery
CN102779861B (en) Electrode structure with grid lines on front surface
CN202142542U (en) X type positive electrode structure used for solar battery
CN202523721U (en) Positive grid line electrode structure of improved crystalline silicon cell
CN204792813U (en) Brilliant silicon solar cell positive electrode and solar cell
CN102184974B (en) Positive electrode of solar cell
CN203085565U (en) Novel solar battery positive electrode
CN102544128B (en) Solar cell
CN203415587U (en) Five-main-grid high-efficiency solar cell
CN206628479U (en) The backplate and battery of p-type PERC double-sided solar batteries
CN206697488U (en) The backplate and battery of p-type PERC double-sided solar batteries
CN202564379U (en) Screen structure of solar cell
CN204144275U (en) A kind of solar battery sheet
CN103117314B (en) Solar battery sheet
CN202564378U (en) Double gradual-change screen structure of solar cell
CN204659171U (en) A kind of crystal silicon solar batteries positive electrode half tone
CN204809230U (en) MWT silicon solar cell front electrode
CN203013743U (en) Crystalline silica solar right side main grid electrode
CN203521432U (en) Electrode structure of solar cell sheet
CN203232874U (en) Crystal silicon solar battery piece
CN202712200U (en) Positive electrode of solar cell sheet
CN203325917U (en) Solar cell grid line capable of improving electrical performance and reliability of solar cell piece
CN204516780U (en) Cell piece front gate line structure
CN202332870U (en) Novel polycrystalline silicon solar battery grid line structure
CN206401329U (en) Without main grid crystal-silicon battery slice solar components

Legal Events

Date Code Title Description
GR01 Patent grant
C14 Grant of patent or utility model
CP01 Change in the name or title of a patent holder

Address after: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Patentee after: Guangdong Asahi Polytron Technologies Inc

Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Patentee before: Guangdong Aiko Solar Energy Technology Co., Ltd.

TR01 Transfer of patent right

Effective date of registration: 20171225

Address after: 322009 Zhejiang city in Jinhua Province town of Yiwu City, Su Fuk Road No. 126

Co-patentee after: Guangdong Asahi Polytron Technologies Inc

Patentee after: Zhejiang love Solar Energy Technology Co., Ltd.

Address before: 528100, Sanshui District, Guangdong City, Foshan Industrial Park, No. C District, No. 69

Patentee before: Guangdong Asahi Polytron Technologies Inc

CP01 Change in the name or title of a patent holder
TR01 Transfer of patent right