CN204303822U - A kind of crystal silicon solar cell sheet - Google Patents
A kind of crystal silicon solar cell sheet Download PDFInfo
- Publication number
- CN204303822U CN204303822U CN201420211639.XU CN201420211639U CN204303822U CN 204303822 U CN204303822 U CN 204303822U CN 201420211639 U CN201420211639 U CN 201420211639U CN 204303822 U CN204303822 U CN 204303822U
- Authority
- CN
- China
- Prior art keywords
- gate line
- main gate
- hollow out
- solar cell
- silicon solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 15
- 239000010703 silicon Substances 0.000 title claims abstract description 15
- 239000013078 crystal Substances 0.000 title claims abstract description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052709 silver Inorganic materials 0.000 abstract description 10
- 239000004332 silver Substances 0.000 abstract description 10
- 239000002002 slurry Substances 0.000 abstract description 10
- 238000003466 welding Methods 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000011218 segmentation Effects 0.000 abstract description 4
- 238000011056 performance test Methods 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a kind of crystal silicon solar cell sheet, each row main gate line is divided into some sections of interruption, and every section of main gate line is provided with equally distributed hollow out, and described hollow out is the rectangle hollow out be laterally arranged in order; The hollow out main gate line of segmentation can meet the requirement of silicon solar cell sheet end electric performance test, and on the basis decreasing required positive electrode silver slurry consumption, the positive electrode silver slurry in main gate line still can meet components welding pulling tension requirements, reduces production cost.
Description
Technical field
The utility model relates to photovoltaic silicon field of batteries, is specifically related to a kind of solar battery sheet.
Background technology
At present, what the crystal silicon solar energy battery positive electrode of main flow adopted is main grid and the design of secondary grating, and main grid for collecting the electric current of secondary grid accumulation, and at assembly end for welding busbar, derives the electric current that cell piece sends.Because assembly end is for the requirement of welding of battery film pulling force, main grid mainly adopts straight strip type or the design of segmentation straight strip type, and the shortcoming of this structure is the increase in the consumption of positive electrode silver slurry, adds production cost.
Utility model content
Utility model object: the purpose of this utility model is for the deficiencies in the prior art, provides a kind of under the requirement of Assurance component welding pulling force, reduces the crystal silicon solar cell sheet of cell piece main gate line silver slurry consumption.
Technical scheme: a kind of crystal silicon solar cell sheet described in the utility model, each row main gate line is divided into some sections of interruption, and every section of main gate line is provided with equally distributed hollow out; Former straight strip type main gate line is carried out sectional design by this structure, and hollow out is carried out again in the basis of segmentation main gate line, significantly can reduce the use amount of positive electrode silver slurry, and can meet the demand of positive electrode for welding pulling force.
Preferably, described hollow out is the rectangle hollow out be laterally arranged in order; Adopt rectangle hollow out to form the pierced pattern of array distribution, the requirement of silicon solar cell sheet end electric performance test can either be met, assembly end welding pulling tension requirements can be met again, and greatly reduce the consumption of positive electrode silver slurry, reduce production cost.
Preferably, the quantity of described main gate line is 3 ~ 5 row, can meet different technology controlling and process standards, ensures the normal conversion efficiency of cell piece while promoting welding pulling force.
Preferably, the width of described main gate line is 0.9 ~ 1.5um, can meet welding pulling force when using different silver slurry, and can meet the design of grid line shading-area.
Beneficial effect: the hollow out main gate line of segmentation can meet the requirement of silicon solar cell sheet end electric performance test, on the basis decreasing required positive electrode silver slurry consumption, positive electrode silver slurry in main gate line still can meet components welding pulling tension requirements, reduces production cost.
Accompanying drawing explanation
Fig. 1 is utility model silicon solar cell positive electrode structure schematic diagram;
Fig. 2 is the partial enlargement hollow out schematic diagram of one section of main grid A in Fig. 1.
Detailed description of the invention
Below technical solutions of the utility model are described in detail, but protection domain of the present utility model is not limited to described embodiment.
embodiment: a kind of crystal silicon solar cell sheet, as shown in Figure 1, has 3 row main gate line 1 altogether, the width of main gate line 1 is 1.2um, each row main gate line 1 is divided into is interrupted discontinuous 8 sections, and as shown in Figure 2, every section of main gate line 1 is provided with laterally evenly distributed successively rectangle hollow out 2; Thin grid line is collected cell piece surface current and is pooled to main gate line 1, is finally passed to load end by main gate line 1.Compared with prior art, the present embodiment not only can effectively improve positive electrode printing effect, significantly reduces the use amount of positive electrode silver slurry, and can ensure the demand of grid for welding pulling force of confluxing, and improves cell piece photoelectric conversion efficiency, reduces production cost.
As mentioned above, although represented with reference to specific preferred embodiment and described the utility model, it shall not be construed as the restriction to the utility model self.Under the spirit and scope prerequisite of the present utility model not departing from claims definition, various change can be made in the form and details to it.
Claims (3)
1. a crystal silicon solar cell sheet, is characterized in that: each row main gate line is divided into some sections of interruption, and every section of main gate line is provided with equally distributed hollow out, and described hollow out is the rectangle hollow out be laterally arranged in order.
2. crystal silicon solar cell sheet according to claim 1, is characterized in that: the quantity of described main gate line is 3 ~ 5 row.
3. crystal silicon solar cell sheet according to claim 1, is characterized in that: the width of described main gate line is 0.9 ~ 1.5um.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420211639.XU CN204303822U (en) | 2014-04-28 | 2014-04-28 | A kind of crystal silicon solar cell sheet |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201420211639.XU CN204303822U (en) | 2014-04-28 | 2014-04-28 | A kind of crystal silicon solar cell sheet |
Publications (1)
Publication Number | Publication Date |
---|---|
CN204303822U true CN204303822U (en) | 2015-04-29 |
Family
ID=53109340
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201420211639.XU Expired - Lifetime CN204303822U (en) | 2014-04-28 | 2014-04-28 | A kind of crystal silicon solar cell sheet |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN204303822U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106531829A (en) * | 2016-12-23 | 2017-03-22 | 泰州乐叶光伏科技有限公司 | Interconnection structure between solar laminated cells and solar laminated cell |
CN107039548A (en) * | 2017-05-31 | 2017-08-11 | 宁波尤利卡太阳能科技发展有限公司 | A kind of solar cell electrode structure at right side and its printing process |
CN112186046A (en) * | 2019-07-01 | 2021-01-05 | 泰州隆基乐叶光伏科技有限公司 | Solar cell and preparation method thereof |
-
2014
- 2014-04-28 CN CN201420211639.XU patent/CN204303822U/en not_active Expired - Lifetime
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106531829A (en) * | 2016-12-23 | 2017-03-22 | 泰州乐叶光伏科技有限公司 | Interconnection structure between solar laminated cells and solar laminated cell |
US11784269B2 (en) | 2016-12-23 | 2023-10-10 | Taizhou Lerrisolar Technology Co., Ltd | Interconnection structure between shingled solar cell slices and solar cell with interconnection structure |
CN107039548A (en) * | 2017-05-31 | 2017-08-11 | 宁波尤利卡太阳能科技发展有限公司 | A kind of solar cell electrode structure at right side and its printing process |
CN107039548B (en) * | 2017-05-31 | 2018-10-30 | 宁波尤利卡太阳能科技发展有限公司 | A kind of solar cell electrode structure at right side and its printing process |
CN112186046A (en) * | 2019-07-01 | 2021-01-05 | 泰州隆基乐叶光伏科技有限公司 | Solar cell and preparation method thereof |
CN112186046B (en) * | 2019-07-01 | 2022-05-17 | 泰州隆基乐叶光伏科技有限公司 | Solar cell and preparation method thereof |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN202662616U (en) | Main grating line structure of solar cell | |
CN201868440U (en) | Front side electrode structure of solar battery | |
CN204303822U (en) | A kind of crystal silicon solar cell sheet | |
CN205335263U (en) | Positive electrode network version of crystalline silicon solar cells | |
CN102544128B (en) | Solar cell | |
CN202934909U (en) | Sectional type back-electrode screen printing plate | |
CN103904144B (en) | Crystal silicon solar energy battery hollow type primary gate electrode | |
CN204167328U (en) | A kind of solar battery front side grid structure with secondary main gate line | |
CN205621744U (en) | Solar cell assembly | |
CN205081126U (en) | Solar cell's grid line electrode structure | |
CN204289473U (en) | A kind of solar battery sheet grid line structure of positive electrode | |
CN202977433U (en) | Rear main grid line of solar battery piece and solar battery piece | |
CN206432271U (en) | Solar energy is without main gate line crystal-silicon battery slice | |
CN203013743U (en) | Crystalline silica solar right side main grid electrode | |
CN202601626U (en) | Back electrode sectional-type solar cell | |
CN204348729U (en) | The much higher crystal silicon solar batteries sheet of photoelectric conversion efficiency | |
CN204289471U (en) | A kind of crystal silicon solar energy battery structure | |
CN204303824U (en) | A kind of solar battery sheet | |
CN203774345U (en) | Crystalline silicon solar cell hollow main gate electrode | |
CN204696130U (en) | Crystal silicon solar energy battery electrode structure at right side | |
CN203774344U (en) | Crystalline silicon solar cell matrix type back electrodes | |
CN203288604U (en) | Positive electrode of crystalline silicon solar cell | |
CN202332870U (en) | Novel polycrystalline silicon solar battery grid line structure | |
CN203038933U (en) | Positive electrode structure of crystalline silicon solar cells | |
CN207398160U (en) | A kind of screen printing screens for increasing five main grids of light-receiving area |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20150429 |