CN103887350B - Crystal silicon solar energy battery matrix form back electrode - Google Patents
Crystal silicon solar energy battery matrix form back electrode Download PDFInfo
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- CN103887350B CN103887350B CN201410138162.1A CN201410138162A CN103887350B CN 103887350 B CN103887350 B CN 103887350B CN 201410138162 A CN201410138162 A CN 201410138162A CN 103887350 B CN103887350 B CN 103887350B
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- back electrode
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- 239000011159 matrix material Substances 0.000 title claims abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 14
- 239000010703 silicon Substances 0.000 title claims abstract description 14
- 239000013078 crystal Substances 0.000 title claims abstract description 12
- 230000005684 electric field Effects 0.000 claims abstract description 7
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 abstract description 2
- 239000002002 slurry Substances 0.000 description 8
- 238000010422 painting Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of crystal silicon solar energy battery matrix form back electrode, described crystal silicon solar energy battery is polycrystalline 156 cell pieces, described back electrode has 15 sections, and 15 sections of back electrodes are the five-element's three column matrix shapes and arrange, one row back electrode is positioned in the middle of the cell piece back side, all the other two row back electrodes are separately apart from 52 millimeters of middle row back electrodes, every section of back electrode is all vertical bar shape, and the edge of every section of back electrode is all connected with some frame lines, the interruption-like back electrode periphery that is evenly covered with of described frame line, the edge of described back electrode contacts with back of the body electric field with described frame line, this crystal silicon solar energy battery matrix form back electrode has reduced carries on the back silver-colored consumption, contact better with back of the body aluminium, strengthen the printing area of back surface field, electric current and voltage are better improved, meanwhile also better control the problem of back electrode with the stack of back of the body electric field.
Description
Technical field
The invention belongs to solar battery structure field, be specifically related to a kind of polycrystalline 156The back electrode structure of cell piece.
Background technology
Solar cell is a kind of device that luminous energy is converted into electric energy, due to itClean, pollution-free, inexhaustible, receive increasing concern.
What adopt at present extensively is silicon solar cell, also standard of its manufacturing processChange, key step is: Chemical cleaning and surface structuration processing (making herbs into wool)-diffusionSystem knot-periphery etching-depositing antireflection film-serigraphy-sintering. Wherein, screen printingFirst brush carries out the printing of backplate, and slurry is Ag slurry, printed back after dryingElectric field, slurry is Al slurry, after oven dry, through turner, front electrode is printed in upset,Slurry is Ag slurry. For polycrystalline 156 cell pieces, back electrode is generally three, limitTwo back electrodes of edge are 26mm apart from the distance at cell piece edge, and middle one is positioned atIn the middle of cell piece, that is the distance of two is 52mm apart from edge. The master of back electrodeActing on is for components provides pad, is conducive to the output of photogenerated current.
But, adopting this mode, the unit consumption of back electrode Ag slurry is too large, wet at presentHeavy control range is 0.07-0.08g, and because the region of back electrode is excessive, causesThe printing area of back surface field is less, is unfavorable for open-circuit voltage and the short circuit current of cell piece,Moreover, back electrode and back surface field contact and stack situation good not.
Summary of the invention
In order to address the above problem, the invention provides a kind of crystal silicon solar energy batteryMatrix form back electrode, this crystal silicon solar energy battery matrix form back electrode has reduced back of the body silverConsumption; Contact better, strengthened the printing area of back surface field with back of the body aluminium, better carryHigh electric current and voltage; Meanwhile also better control back electrode folded with back of the body electric fieldThe problem adding.
The present invention for the technical scheme that solves its technical problem and adopt is:
A kind of crystal silicon solar energy battery matrix form back electrode, described crystal silicon solarBattery is polycrystalline 156 cell pieces, and described back electrode has 15 sections, and 15 sections of back ofs the bodyElectrode is the five-element's three column matrix shapes arranges, and a row back electrode is arranged in the cell piece back sideBetween, all the other two row back electrodes (refer to every apart from 52 millimeters of middle row back electrodes separatelyDistance between row back electrode center line), every section of back electrode is all vertical bar shape, and everyThe edge of section back electrode is all connected with some frame lines, the interruption-like even cloth of described frame lineFull back electrode periphery, the edge of described back electrode contacts with back of the body electric field with described frame line.
The present invention for the further technical scheme that solves its technical problem and adopt is:
Say further, every section of described back electrode be length be 18 millimeters and wide be 2.3The rectangle vertical bar shape of millimeter, and spacing between same column back electrode is 12 millimeters, everyIn row back electrode, be positioned at the head and the tail back electrode at two ends and the spacing at cell piece edge separatelyIt is 6 millimeters.
Say further, the left and right sides of every section of described back electrode is evenly distributed with separatelyThe described frame line of one row, every row frame line is all 0.5 millimeter by 18 spacesFrame line composition, and the frame line that is positioned at two ends is separately apart from the two ends 0.25 of back electrodeMillimeter; The two ends of every section of described back electrode are evenly distributed with frame described in a line separatelyLine, the frame line that every row frame line is all 0.4 millimeter by three spaces forms, andThe frame line that is positioned at left and right end separately with the left right-hand justified of back electrode; Described frame line is longBe 1 millimeter and wide be the rectangle frame line of 0.5 millimeter.
The invention has the beneficial effects as follows: crystal silicon solar energy battery matrix form of the present inventionBack electrode is mainly that back electrode is divided into 15 sections, and 15 sections of back electrodes are the five-element threeColumn matrix shape is arranged, and the edge of every section of back electrode is all connected with some frame lines, back of the body electricityThe edge of the utmost point contacts with back of the body electric field with frame line, and therefore tool has the following advantages:
1) unit consumption is low: under identical printing parameter arranges, and screen painting of the present inventionUnit consumption scope be 0.03-0.04g, and the unit consumption scope of existing linear electrode is0.06-0.08g, unit consumption declines approximately 40%;
2) cell piece open press and electric current promote to some extent: due to making of matrix form electrodeWith, the printing area of back electrode reduces, thereby the passivation area of carrying on the back electric field is increased,Cell piece open press and electric current promote to some extent;
3) back electrode is better with contacting of back of the body electric field: due at four of every section of back electrodeThere is the frame line of a circle dense distribution around, thereby make back electrode and carry on the back contacting more of electric fieldGood.
Brief description of the drawings
Fig. 1 is structural representation of the present invention;
Fig. 2 is every section of back electrode of the present invention and peripheral frame line structure schematic diagram thereof.
Detailed description of the invention
Below by specific instantiation explanation the specific embodiment of the present invention, originallyThose skilled in the art can understand the present invention easily by content disclosed in the present specificationAdvantage and effect. The present invention also can other different mode be implemented, that is,Under not departing from disclosed category, can give different modifications and change.
Embodiment: a kind of crystal silicon solar energy battery matrix form back electrode, described crystalSilicon solar cell is polycrystalline 156 cell pieces, and described back electrode 1 has 15 sections,And 15 sections of back electrodes are the five-element's three column matrix shapes arranges, and a row back electrode is positioned at batteryIn the middle of the sheet back side, all the other two row back electrodes are middle row back electrode 52 millis of distance separatelyRice (referring to the distance between every row back electrode center line), every section of back electrode is all vertical barShape, and the edge of every section of back electrode is all connected with some frame lines 2, between described frame line isEvenly be covered with back electrode periphery every shape, the edge of described back electrode and described frame line and the back of the bodyElectric field contact.
Every section of described back electrode be length be 18 millimeters and wide be that the rectangle of 2.3 millimeters is perpendicularStrip, and spacing between same column back electrode is 12 millimeters, every row back electrode metaRespectively do for oneself 6 millimeters in the back electrode at head and the tail two ends and the spacing at cell piece edge.
The left and right sides of every section of described back electrode is evenly distributed with the described frame of row separatelyLine, the frame line that every row frame line is all 0.5 millimeter by 18 spaces forms,And the frame line that is positioned at two ends is separately apart from 0.25 millimeter of the two ends of back electrode; OftenThe two ends of Duan Suoshu back electrode are evenly distributed with frame line described in a line, every row frame separatelyThe frame line that line is all 0.4 millimeter by three spaces forms, and is positioned at left and right endFrame line separately with the left right-hand justified of back electrode; Described frame line be length be 1 millimeter andWide is the rectangle frame line of 0.5 millimeter.
200 of the silicon chips of same silicon ingot are chosen in experiment, use respectively matrix form back electrode net100 of version and existing straight line back electrode screen paintings, relatively unit consumption and electrical property numberAccording to.
Experimental example: matrix form back electrode of the present invention
Pack half tone into printing machine, load onto scraper, returning blade, and add slurry, regulateGood printing parameter, ensures that the back electrode figure of printing is good, claims hygrometric weight, result asUnder:
| Sampling | 1 | 2 | 3 | 4 | 5 | Mean value |
| Weight in wet base (g) | 0.033 | 0.035 | 0.037 | 0.036 | 0.034 | 0.035 |
At AM1.5, light intensity 1000W, under 25 DEG C of conditions, measure its unit for electrical property parametersSituation be:
| Voc(open-circuit voltage) | Isc(short circuit current) | FF(fill factor, curve factor) | Eff(photoelectric transformation efficiency) |
| 0.626 | 8.56 | 78.4 | 17.26% |
Comparative example: printing parameter is constant, changes existing linear electrode screen painting and makesExisting linear electrode, claims hygrometric weight, and result is as follows:
| Sampling | 1 | 2 | 3 | 4 | 5 | Mean value |
| Weight in wet base (g) | 0.062 | 0.062 | 0.061 | 0.063 | 0.063 | 0.062 |
At AM1.5, light intensity 1000W, under 25 DEG C of conditions, measure its unit for electrical property parametersSituation be:
| Voc(open-circuit voltage) | Isc(short circuit current) | FF(fill factor, curve factor) | Eff(photoelectric transformation efficiency) |
| 0.625 | 8.55 | 78.5 | 17.24% |
Can find out from above-mentioned experiment, unit consumption of the present invention approximately reduces by 40%, electrical propertyIn parameter, open-circuit voltage Uoc and short circuit current Isc all have small size lifting, in efficiency, omitHigh by 0.02%. Visible, this invention has not only significantly reduced the one-tenth of cell piece production processOriginally, also promoted to a certain extent the conversion efficiency of solar battery sheet.
Claims (1)
1. a crystal silicon solar energy battery matrix form back electrode, described crystalline silicon tooSun can battery be polycrystalline 156 cell pieces, it is characterized in that: described back electrode (1)There are 15 sections, and 15 sections of back electrodes are the five-element's three column matrix shapes and arrange, a row back of the bodyElectrode is positioned in the middle of the cell piece back side, and all the other two row back electrodes are the middle row of distance separately52 millimeters of back electrodes, every section of back electrode is all vertical bar shape, and the limit of every section of back electrodeEdge is all connected with some frame lines (2), the interruption-like back electrode that is evenly covered with of described frame linePeriphery, the edge of described back electrode contacts with back of the body electric field with described frame line;
Every section of described back electrode be length be 18 millimeters and wide be that the rectangle of 2.3 millimeters is perpendicularStrip, and spacing between same column back electrode is 12 millimeters, every row back electrode metaRespectively do for oneself 6 millimeters in the back electrode at head and the tail two ends and the spacing at cell piece edge;
The left and right sides of every section of described back electrode is evenly distributed with the described frame of row separatelyLine, the frame line that every row frame line is all 0.5 millimeter by 18 spaces forms,And the frame line that is positioned at two ends is separately apart from 0.25 millimeter of the two ends of back electrode; OftenThe two ends of Duan Suoshu back electrode are evenly distributed with frame line described in a line, every row frame separatelyThe frame line that line is all 0.4 millimeter by three spaces forms, and is positioned at left and right endFrame line separately with the left right-hand justified of back electrode; Described frame line is that length is 1 millimeterAnd wide is the rectangle frame line of 0.5 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410138162.1A CN103887350B (en) | 2014-04-08 | 2014-04-08 | Crystal silicon solar energy battery matrix form back electrode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410138162.1A CN103887350B (en) | 2014-04-08 | 2014-04-08 | Crystal silicon solar energy battery matrix form back electrode |
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| Publication Number | Publication Date |
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| CN103887350A CN103887350A (en) | 2014-06-25 |
| CN103887350B true CN103887350B (en) | 2016-05-18 |
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| CN201410138162.1A Expired - Fee Related CN103887350B (en) | 2014-04-08 | 2014-04-08 | Crystal silicon solar energy battery matrix form back electrode |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111002701B (en) * | 2019-11-05 | 2021-08-24 | 晋能清洁能源科技股份公司 | Four-segment back electrode back electric field screen printing plate for improving assembly cold welding and application thereof |
| CN114551605A (en) * | 2020-11-24 | 2022-05-27 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of solar cell and solar cell |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US9461186B2 (en) * | 2010-07-15 | 2016-10-04 | First Solar, Inc. | Back contact for a photovoltaic module |
| CN102254994A (en) * | 2011-07-05 | 2011-11-23 | 浙江鸿禧光伏科技股份有限公司 | Back electrode design method |
| CN202855749U (en) * | 2012-10-24 | 2013-04-03 | 海南英利新能源有限公司 | Solar cell |
| CN203071084U (en) * | 2012-12-18 | 2013-07-17 | 太极能源科技（昆山）有限公司 | Sectional back electrode and back field structure |
| CN203774344U (en) * | 2014-04-08 | 2014-08-13 | 江苏欧耐尔新型材料有限公司 | Crystalline silicon solar cell matrix type back electrodes |
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