CN204348729U - The much higher crystal silicon solar batteries sheet of photoelectric conversion efficiency - Google Patents
The much higher crystal silicon solar batteries sheet of photoelectric conversion efficiency Download PDFInfo
- Publication number
- CN204348729U CN204348729U CN201520091121.1U CN201520091121U CN204348729U CN 204348729 U CN204348729 U CN 204348729U CN 201520091121 U CN201520091121 U CN 201520091121U CN 204348729 U CN204348729 U CN 204348729U
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- back electrode
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- film
- silicon chip
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Abstract
The utility model provides a kind of photoelectric conversion efficiency much higher crystal silicon solar batteries sheet, comprise silicon chip, the surface of silicon chip is provided with catadioptric film, main gate line and time grid line is printed on above catadioptric film, the back side of silicon chip is printed on back electrode, it is characterized in that the composite bed that described catadioptric film is made up of hollow silica ball film and silicon oxynitride film, described main gate line and described grid line intersect vertically, described main gate line is the fine line that width is greater than described grid line, described fine line is arranged at intervals with the solid line segment that multiple width is greater than described fine line, described back electrode has 15 sections, and 15 sections of back electrodes are the arrangement of the five-element three column matrix shape, every section of back electrode is all vertical bar shape, and the edge conjunction of every section of back electrode has some frame lines.The utility model has low cost of manufacture, conversion efficiency high.
Description
Technical field
The utility model relates to a kind of polysilicon solar battery slice of the sun.
Background technology
Solar battery sheet is a kind of device due to photovoltaic effect, solar energy being converted into electric energy, is a kind of novel power supply, has permanent, spatter property and the large feature of flexibility three.But existing solar battery sheet exists, and conversion efficiency is low, the high deficiency of production cost.
Utility model content
The purpose of this utility model is exactly provide for above-mentioned situation the polysilicon solar battery slice that a kind of conversion efficiency is high, production cost is low.The purpose of this utility model realizes by following scheme: the much higher crystal silicon solar batteries sheet of a kind of photoelectric conversion efficiency, comprise silicon chip, the surface of silicon chip is provided with catadioptric film, main gate line and time grid line is printed on above catadioptric film, the back side of silicon chip is printed on back electrode, it is characterized in that the composite bed that described catadioptric film is made up of hollow silica ball film and silicon oxynitride film, the thickness of described hollow silica ball film is 18-20nm, the thickness of described silicon oxynitride film is 36-40nm, the catadioptric film of this structure effectively can improve photoelectric conversion efficiency, described main gate line and described grid line intersect vertically, described main gate line is the fine line that width is greater than described grid line, described fine line is arranged at intervals with the solid line segment that multiple width is greater than described fine line, the width of described solid line segment is 1.4mm, the width of fine line is 0.3mm, the width of described grid line is 0.04mm, main gate line and time grid line of this structure both can save printing slurry, reduce production cost, also shading-area can be reduced, promote conversion efficiency, described back electrode has 15 sections, and 15 sections of back electrodes are the arrangement of the five-element three column matrix shape, one row back electrode is positioned in the middle of silicon chip back side, all the other two row back electrodes refer to the distance often between row back electrode center line apart from a middle row back electrode 52mm(separately), every section of back electrode is all vertical bar shape, and the edge conjunction of every section of back electrode has some frame lines, described frame line is interruption-like is evenly covered with back electrode periphery, described back electrode is that length is 18mm and the wide rectangle vertical bar shape for 2.3mm, and be spaced apart 12mm between same column back electrode, the interval of the back electrode and silicon chip edge that are often positioned at head and the tail two ends in row back electrode is 9mm separately, the back electrode of this structure can reduce the use of printing slurry, reduce production cost.The utility model has low cost of manufacture, conversion efficiency high.
Accompanying drawing explanation
Fig. 1, the utility model structural representation.
Fig. 2, the utility model Facad structure schematic diagram.
Fig. 3, back electrode structure schematic diagram.
Fig. 4, every section of back electrode and peripheral frame line structure schematic diagram thereof.
Embodiment
Fig. 1, Fig. 2, Fig. 3, Fig. 4 are known in contrast, the much higher crystal silicon solar batteries sheet of a kind of photoelectric conversion efficiency, comprise silicon chip 1, the surface of silicon chip is provided with catadioptric film 2, be printed on main gate line 3 and time grid line 4 above catadioptric film, the back side of silicon chip is printed on back electrode 5, it is characterized in that the composite bed that described catadioptric film is made up of hollow silica ball film and silicon oxynitride film, the thickness of described hollow silica ball film is 18-20nm, and the thickness of described silicon oxynitride film is 36-40nm, described main gate line and described grid line intersect vertically, described main gate line is the fine line that width is greater than described grid line, described fine line is arranged at intervals with the solid line segment that multiple width is greater than described fine line, the width of described solid line segment is 1.4mm, the width of fine line is 0.3mm, the width of described grid line is 0.04mm, described back electrode has 15 sections, and 15 sections of back electrodes are the arrangement of the five-element three column matrix shape, one row back electrode is positioned in the middle of silicon chip back side, all the other two row back electrodes are separately apart from a middle row back electrode 52mm, every section of back electrode is all vertical bar shape, and the edge conjunction of every section of back electrode has some frame lines 6, described frame line is interruption-like is evenly covered with back electrode periphery, described back electrode is that length is 18mm and the wide rectangle vertical bar shape for 2.3mm, and be spaced apart 12mm between same column back electrode, the interval of the back electrode and silicon chip edge that are often positioned at head and the tail two ends in row back electrode is 9mm separately.
Claims (1)
1. the much higher crystal silicon solar batteries sheet of photoelectric conversion efficiency, comprise silicon chip (1), the surface of silicon chip is provided with catadioptric film (2), main gate line (3) and time grid line (4) is printed on above catadioptric film, the back side of silicon chip is printed on back electrode (5), it is characterized in that the composite bed that described catadioptric film is made up of hollow silica ball film and silicon oxynitride film, the thickness of described hollow silica ball film is 18-20nm, and the thickness of described silicon oxynitride film is 36-40nm, described main gate line and described grid line intersect vertically, described main gate line is the fine line that width is greater than described grid line, described fine line is arranged at intervals with the solid line segment that multiple width is greater than described fine line, the width of described solid line segment is 1.4mm, the width of fine line is 0.3mm, the width of described grid line is 0.04mm, described back electrode has 15 sections, and 15 sections of back electrodes are the arrangement of the five-element three column matrix shape, one row back electrode is positioned in the middle of silicon chip back side, all the other two row back electrodes are separately apart from a middle row back electrode 52mm, every section of back electrode is all vertical bar shape, and the edge conjunction of every section of back electrode has some frame lines (6), described frame line is interruption-like is evenly covered with back electrode periphery, described back electrode is that length is 18mm and the wide rectangle vertical bar shape for 2.3mm, and be spaced apart 12mm between same column back electrode, the interval of the back electrode and silicon chip edge that are often positioned at head and the tail two ends in row back electrode is 9mm separately.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520091121.1U CN204348729U (en) | 2015-02-10 | 2015-02-10 | The much higher crystal silicon solar batteries sheet of photoelectric conversion efficiency |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520091121.1U CN204348729U (en) | 2015-02-10 | 2015-02-10 | The much higher crystal silicon solar batteries sheet of photoelectric conversion efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204348729U true CN204348729U (en) | 2015-05-20 |
Family
ID=53231980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520091121.1U Expired - Fee Related CN204348729U (en) | 2015-02-10 | 2015-02-10 | The much higher crystal silicon solar batteries sheet of photoelectric conversion efficiency |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204348729U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106229355A (en) * | 2016-08-31 | 2016-12-14 | 泰州德通电气有限公司 | A kind of polycrystal silicon cell electrode structure |
-
2015
- 2015-02-10 CN CN201520091121.1U patent/CN204348729U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106229355A (en) * | 2016-08-31 | 2016-12-14 | 泰州德通电气有限公司 | A kind of polycrystal silicon cell electrode structure |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 335200 Longgang Industrial Park, Yujiang, Jiangxi, Yingtan Patentee after: China Jiangxi new energy Limited by Share Ltd Address before: 335200 Longgang Industrial Park, Yujiang, Jiangxi, Yingtan Patentee before: JIANGXI JTNE NEW ENERGY CO., LTD. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150520 Termination date: 20190210 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |