CN103887350A - Matrix back electrodes for crystalline silicon solar cell - Google Patents
Matrix back electrodes for crystalline silicon solar cell Download PDFInfo
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- CN103887350A CN103887350A CN201410138162.1A CN201410138162A CN103887350A CN 103887350 A CN103887350 A CN 103887350A CN 201410138162 A CN201410138162 A CN 201410138162A CN 103887350 A CN103887350 A CN 103887350A
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- back electrode
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- electrodes
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- 239000011159 matrix material Substances 0.000 title claims abstract description 20
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 3
- 230000005684 electric field Effects 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 15
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 239000013078 crystal Substances 0.000 claims description 12
- 238000007639 printing Methods 0.000 abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 239000002002 slurry Substances 0.000 description 8
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000010422 painting Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005070 sampling Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses matrix back electrodes for a crystalline silicon solar cell. The crystalline silicon solar cell is a polycrystalline cell piece. 15 back electrodes are arranged in a five-line three-row matrix shape. One row of back electrodes are disposed in the middle of the cell piece back, and the other two rows of back electrodes are 52 millimeters away from the middles respectively. Each back electrode is in a vertical bar shape, and a plurality of frame lines are connected with the edges of all the back electrodes and cover the peripheries of the back electrodes uniformly at intervals. The edges of the back electrodes and the frame lines are in contact with a back electric field. By means of the matrix back electrodes, the back silver consumption is reduced, the contact with back aluminum is good, the back field printing area is increased, the current and the voltage are improved, and the stacking of the back electrodes and the back electric field is well controlled.
Description
Technical field
The invention belongs to solar battery structure field, be specifically related to a kind of back electrode structure of polycrystalline 156 cell pieces.
Background technology
Solar cell is a kind of device that luminous energy is converted into electric energy, because it is clean, pollution-free, inexhaustible, receives increasing concern.
What extensively adopt at present is silicon solar cell, and its manufacturing process is standardization also, and key step is: chemical cleaning and surface structuration processing (making herbs into wool)-diffusion system knot-periphery etching-depositing antireflection film-silk screen printing-sintering.Wherein, first silk screen printing carries out the printing of backplate, and slurry is Ag slurry, printed back electric field after drying, and slurry is Al slurry, after oven dry, through turner upset printing front electrode, slurry is Ag slurry.For polycrystalline 156 cell pieces, back electrode is generally three, and two, edge back electrode is 26mm apart from the distance at cell piece edge, and middle one is positioned in the middle of cell piece, that is the distance of two is 52mm apart from edge.The Main Function of back electrode is for components provides pad, is conducive to the output of photogenerated current.
But, adopt this mode, the unit consumption of back electrode Ag slurry is too large, the control range of weight in wet base is 0.07-0.08g at present, and because the region of back electrode is excessive, cause the printing area of back surface field less, be unfavorable for open circuit voltage and the short circuit current of cell piece, moreover, back electrode and back surface field contact and stack situation good not.
Summary of the invention
In order to address the above problem, the invention provides a kind of crystal silicon solar energy battery matrix form back electrode, this crystal silicon solar energy battery matrix form back electrode has reduced carries on the back silver-colored consumption; Contact better, strengthened the printing area of back surface field with back of the body aluminium, better improved electric current and voltage; Meanwhile also better control the problem of back electrode with the stack of back of the body electric field.
The present invention for the technical scheme that solves its technical problem and adopt is:
A kind of crystal silicon solar energy battery matrix form back electrode, described crystal silicon solar energy battery is polycrystalline 156 cell pieces, described back electrode has 15 sections, and 15 sections of back electrodes are the five-element's three column matrix shapes and arrange, one row back electrode is positioned in the middle of the cell piece back side, all the other two row back electrodes are 52 millimeters of middle row back electrodes of distance (referring to the distance between every row back electrode center line) separately, every section of back electrode is all vertical bar shape, and the edge of every section of back electrode is all connected with some frame lines, the interruption-like back electrode periphery that is evenly covered with of described frame line, the edge of described back electrode contacts with back of the body electric field with described frame line.
The present invention for the further technical scheme that solves its technical problem and adopt is:
Say further, every section of described back electrode be length be 18 millimeters and wide be the rectangle vertical bar shape of 2.3 millimeters, and spacing between same column back electrode is 12 millimeters, is positioned at the head and the tail back electrode at two ends and the spacing at cell piece edge and does for oneself 6 millimeters in every row back electrode.
Say further, the left and right sides of every section of described back electrode is evenly distributed with the described frame line of row separately, the frame line that every row frame line is all 0.5 millimeter by 18 spaces forms, and the frame line that is positioned at two ends is separately apart from 0.25 millimeter of the two ends of back electrode; The two ends of every section of described back electrode are evenly distributed with frame line described in a line separately, and the frame line that every row frame line is all 0.4 millimeter by three spaces forms, and the frame line that is positioned at left and right end separately with the left right-hand justified of back electrode; Described frame line be length be 1 millimeter and wide be the rectangle frame line of 0.5 millimeter.
The invention has the beneficial effects as follows: crystal silicon solar energy battery matrix form back electrode of the present invention is mainly that back electrode is divided into 15 sections, and 15 sections of back electrodes are the five-element's three column matrix shapes and arrange, and the edge of every section of back electrode is all connected with some frame lines, the edge of back electrode contacts with back of the body electric field with frame line, and therefore tool has the following advantages:
1) unit consumption is low: under identical printing parameter arranges, the unit consumption scope of screen painting of the present invention is 0.03-0.04g, and the unit consumption scope of existing linear electrode is 0.06-0.08g, and unit consumption declines approximately 40%;
2) opening of cell piece pressed and electric current promotes to some extent: due to the use of matrix form electrode, the printing area of back electrode reduces, thereby the passivation area of carrying on the back electric field is increased, and the opening of cell piece pressed and electric current promotes to some extent;
3) back electrode is better with contacting of back of the body electric field: owing to being with the frame line of a circle dense distribution in the surrounding of every section of back electrode, thereby make back electrode better with contacting of back of the body electric field.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention;
Fig. 2 is every section of back electrode of the present invention and peripheral frame line structure schematic diagram thereof.
Embodiment
Below, by specific instantiation explanation the specific embodiment of the present invention, those skilled in the art can understand advantage of the present invention and effect easily by content disclosed in the present specification.The present invention also can other different mode be implemented, and, under not departing from disclosed category, can give different modifications and change that is.
Embodiment: a kind of crystal silicon solar energy battery matrix form back electrode, described crystal silicon solar energy battery is polycrystalline 156 cell pieces, described back electrode 1 has 15 sections, and 15 sections of back electrodes are the five-element's three column matrix shapes and arrange, one row back electrode is positioned in the middle of the cell piece back side, all the other two row back electrodes are 52 millimeters of middle row back electrodes of distance (referring to the distance between every row back electrode center line) separately, every section of back electrode is all vertical bar shape, and the edge of every section of back electrode is all connected with some frame lines 2, the interruption-like back electrode periphery that is evenly covered with of described frame line, the edge of described back electrode contacts with back of the body electric field with described frame line.
Every section of described back electrode be length be 18 millimeters and wide be the rectangle vertical bar shape of 2.3 millimeters, and spacing between same column back electrode is 12 millimeters, is positioned at the head and the tail back electrode at two ends and the spacing at cell piece edge and does for oneself 6 millimeters in every row back electrode.
The left and right sides of every section of described back electrode is evenly distributed with the described frame line of row separately, and the frame line that every row frame line is all 0.5 millimeter by 18 spaces forms, and the frame line that is positioned at two ends is separately apart from 0.25 millimeter of the two ends of back electrode; The two ends of every section of described back electrode are evenly distributed with frame line described in a line separately, and the frame line that every row frame line is all 0.4 millimeter by three spaces forms, and the frame line that is positioned at left and right end separately with the left right-hand justified of back electrode; Described frame line be length be 1 millimeter and wide be the rectangle frame line of 0.5 millimeter.
200 of the silicon chips of same silicon ingot are chosen in experiment, use respectively 100 of matrix form back electrode half tone and existing straight line back electrode screen paintings, relatively unit consumption and electrical performance data.
Experimental example: matrix form back electrode of the present invention
Pack half tone into printing machine, load onto scraper, returning blade, and add slurry, regulate printing parameter, guarantee that the back electrode figure of printing is good, claim hygrometric weight, result is as follows:
| Sampling | 1 | 2 | 3 | 4 | 5 | Mean value |
| Weight in wet base (g) | 0.033 | 0.035 | 0.037 | 0.036 | 0.034 | 0.035 |
At AM1.5, light intensity 1000W, the situation of measuring its unit for electrical property parameters under 25 ℃ of conditions is:
| Voc(open circuit voltage) | Isc(short circuit current) | FF(fill factor, curve factor) | Eff(photoelectric conversion efficiency) |
| 0.626 | 8.56 | 78.4 | 17.26% |
Comparative example: printing parameter is constant, changes existing linear electrode screen painting and makes existing linear electrode, claims hygrometric weight, and result is as follows:
| Sampling | 1 | 2 | 3 | 4 | 5 | Mean value |
| Weight in wet base (g) | 0.062 | 0.062 | 0.061 | 0.063 | 0.063 | 0.062 |
At AM1.5, light intensity 1000W, the situation of measuring its unit for electrical property parameters under 25 ℃ of conditions is:
| Voc(open circuit voltage) | Isc(short circuit current) | FF(fill factor, curve factor) | Eff(photoelectric conversion efficiency) |
| 0.625 | 8.55 | 78.5 | 17.24% |
Can find out from above-mentioned experiment, unit consumption of the present invention approximately reduces by 40%, and on unit for electrical property parameters, open circuit voltage Uoc and short circuit current Isc all have small size lifting, slightly high by 0.02% in efficiency.Visible, this invention has not only significantly reduced the cost of cell piece production process, has also promoted to a certain extent the conversion efficiency of solar battery sheet.
Claims (3)
1. a crystal silicon solar energy battery matrix form back electrode, described crystal silicon solar energy battery is polycrystalline 156 cell pieces, it is characterized in that: described back electrode (1) has 15 sections, and 15 sections of back electrodes are the five-element's three column matrix shapes and arrange, one row back electrode is positioned in the middle of the cell piece back side, all the other two row back electrodes are separately apart from 52 millimeters of middle row back electrodes, every section of back electrode is all vertical bar shape, and the edge of every section of back electrode is all connected with some frame lines (2), the interruption-like back electrode periphery that is evenly covered with of described frame line, the edge of described back electrode contacts with back of the body electric field with described frame line.
2. crystal silicon solar energy battery matrix form back electrode as claimed in claim 1, it is characterized in that: every section of described back electrode be length be 18 millimeters and wide be the rectangle vertical bar shape of 2.3 millimeters, and the spacing between same column back electrode is 12 millimeters, in every row back electrode, is positioned at the head and the tail back electrode at two ends and the spacing at cell piece edge and does for oneself 6 millimeters.
3. crystal silicon solar energy battery matrix form back electrode as claimed in claim 2, it is characterized in that: the left and right sides of every section of described back electrode is evenly distributed with the described frame line of row separately, the frame line that every row frame line is all 0.5 millimeter by 18 spaces forms, and the frame line that is positioned at two ends is separately apart from 0.25 millimeter of the two ends of back electrode; The two ends of every section of described back electrode are evenly distributed with frame line described in a line separately, and the frame line that every row frame line is all 0.4 millimeter by three spaces forms, and the frame line that is positioned at left and right end separately with the left right-hand justified of back electrode; Described frame line be length be 1 millimeter and wide be the rectangle frame line of 0.5 millimeter.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410138162.1A CN103887350B (en) | 2014-04-08 | 2014-04-08 | Crystal silicon solar energy battery matrix form back electrode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410138162.1A CN103887350B (en) | 2014-04-08 | 2014-04-08 | Crystal silicon solar energy battery matrix form back electrode |
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| Publication Number | Publication Date |
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| CN103887350A true CN103887350A (en) | 2014-06-25 |
| CN103887350B CN103887350B (en) | 2016-05-18 |
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| CN201410138162.1A Expired - Fee Related CN103887350B (en) | 2014-04-08 | 2014-04-08 | Crystal silicon solar energy battery matrix form back electrode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111002701A (en) * | 2019-11-05 | 2020-04-14 | 晋能清洁能源科技股份公司 | Four-segment back electrode back electric field screen printing plate for improving assembly cold welding and application thereof |
| CN114551605A (en) * | 2020-11-24 | 2022-05-27 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of solar cell and solar cell |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102254994A (en) * | 2011-07-05 | 2011-11-23 | 浙江鸿禧光伏科技股份有限公司 | Back electrode design method |
| US20120012151A1 (en) * | 2010-07-15 | 2012-01-19 | Sreenivas Jayaraman | Back contact for a photovoltaic module |
| CN202855749U (en) * | 2012-10-24 | 2013-04-03 | 海南英利新能源有限公司 | Solar cell |
| CN203071084U (en) * | 2012-12-18 | 2013-07-17 | 太极能源科技（昆山）有限公司 | Sectional back electrode and back field structure |
| CN203774344U (en) * | 2014-04-08 | 2014-08-13 | 江苏欧耐尔新型材料有限公司 | Crystalline silicon solar cell matrix type back electrodes |
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2014
- 2014-04-08 CN CN201410138162.1A patent/CN103887350B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120012151A1 (en) * | 2010-07-15 | 2012-01-19 | Sreenivas Jayaraman | Back contact for a photovoltaic module |
| CN102254994A (en) * | 2011-07-05 | 2011-11-23 | 浙江鸿禧光伏科技股份有限公司 | Back electrode design method |
| CN202855749U (en) * | 2012-10-24 | 2013-04-03 | 海南英利新能源有限公司 | Solar cell |
| CN203071084U (en) * | 2012-12-18 | 2013-07-17 | 太极能源科技（昆山）有限公司 | Sectional back electrode and back field structure |
| CN203774344U (en) * | 2014-04-08 | 2014-08-13 | 江苏欧耐尔新型材料有限公司 | Crystalline silicon solar cell matrix type back electrodes |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111002701A (en) * | 2019-11-05 | 2020-04-14 | 晋能清洁能源科技股份公司 | Four-segment back electrode back electric field screen printing plate for improving assembly cold welding and application thereof |
| CN111002701B (en) * | 2019-11-05 | 2021-08-24 | 晋能清洁能源科技股份公司 | Four-segment back electrode back electric field screen printing plate for improving assembly cold welding and application thereof |
| CN114551605A (en) * | 2020-11-24 | 2022-05-27 | 苏州阿特斯阳光电力科技有限公司 | Preparation method of solar cell and solar cell |
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| CN103887350B (en) | 2016-05-18 |
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