CN207637807U - Solar cell primary gate electrode and solar battery chip - Google Patents
Solar cell primary gate electrode and solar battery chip Download PDFInfo
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- CN207637807U CN207637807U CN201721628784.8U CN201721628784U CN207637807U CN 207637807 U CN207637807 U CN 207637807U CN 201721628784 U CN201721628784 U CN 201721628784U CN 207637807 U CN207637807 U CN 207637807U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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Abstract
The utility model discloses a kind of solar cell primary gate electrode and solar battery chips, and the wherein primary gate electrode includes orthogonal main gate line and thin grid line, wherein main gate line includes solid-section and hollow out section, and solid-section and hollow out section distribute alternately；Main gate line further includes strengthening segment, and strengthening segment is arranged in hollow out section；The content of resin is more than the content of resin in solid-section in strengthening segment.Solar cell primary gate electrode provided by the utility model, by the way that hollow out section is arranged, the use to silver paste can be reduced in the case where ensureing that main gate line maintains normal function, cost is saved, it is more than the strengthening segment of the content of resin in solid-section by the way that the content of resin is arranged in hollow out section simultaneously, the welding procedure of main gate line is set to be carried out at strengthening segment, the welding used in welding procedure can be specifically welded in strengthening segment, so as in the case where ensureing main gate line electric conductivity, promoted main gate line weld welding pulling force.
Description
Technical field
The utility model is related to a kind of technical field of solar batteries more particularly to a kind of solar cell primary gate electrode and
Solar battery chip.
Background technology
Efficiently, the a-Si/c-Si heterojunction solar batteries (SHJ) of high stability and low electric cost will be expected to as future
One of mainstream photovoltaic technology, nearly 2 years hetero-junction solar cell industrialization paces are brought rapidly up.The technology uses low temperature silver paste as gold
Belong to polarizing electrode, still, low temperature silver paste is difficult to take into account electrical property to reach ideal state with welding pulling force.Thus lead to technique control
Make more demanding, process window is smaller.
Utility model content
The purpose of this utility model is to provide a kind of solar cell primary gate electrode and solar battery chip, in solution
The problems of the prior art are stated, are realized in the case where ensureing ideal electrical property, the welding pulling force of low temperature silver paste is improved, are increased
Process window.
The utility model provides a kind of solar cell primary gate electrode, including main gate line and thin grid line, the main gate line
It is mutually perpendicular to the thin grid line, wherein the main gate line includes solid-section and hollow out section, the solid-section and the hollow out section
It distributes alternately；
The main gate line further includes strengthening segment, and the strengthening segment is arranged in the hollow out section；
Ratio shared by the weight of resin is more than in the solid-section ratio shared by the weight of resin in the strengthening segment.
Solar cell primary gate electrode as described above, wherein preferably, the both ends of the strengthening segment respectively with it is described
The solid-section at hollow out section both ends is connected directly.
Solar cell primary gate electrode as described above, wherein preferably, the main gate line includes connection grid line, institute
The both ends for stating strengthening segment are connected by the connection grid line with the solid-section at hollow out section both ends respectively.
Solar cell primary gate electrode as described above, wherein preferably, the width of the strengthening segment is less than or equal to
The width of the solid-section.
Solar cell primary gate electrode as described above, wherein preferably, the length range value of the hollow out section is 10
~15mm.
Solar cell primary gate electrode as described above, wherein preferably, the length of the strengthening segment is the hollow out
The 1/3~1/2 of the length of section.
Solar cell primary gate electrode as described above, wherein preferably, the weight of the resin in the strengthening segment accounts for
The 25%~30% of the strengthening segment total weight.
Solar cell primary gate electrode as described above, wherein preferably, the weight of the resin in the solid-section accounts for
The 10%~15% of the solid-section total weight.
Solar cell primary gate electrode as described above, wherein preferably, the width range value of the solid-section is
0.6~1mm.
The utility model additionally provides a kind of solar battery chip, including crystal silicon substrate, the front of the crystal silicon substrate
It is respectively arranged with intrinsic amorphous silicon layer with reverse side, is respectively set in the intrinsic amorphous silicon layer of the obverse and reverse of the crystal silicon substrate
There are N-type non-crystalline silicon layer and P-type non-crystalline silicon layer, transparent lead is respectively arranged on the N-type non-crystalline silicon layer and the P-type non-crystalline silicon layer
Electric layer, wherein the solar battery chip further includes solar cell primary gate electrode provided by the utility model, the sun
Energy battery primary gate electrode is arranged on the transparency conducting layer.
Solar cell primary gate electrode provided by the utility model can ensure main gate line dimension by the way that hollow out section is arranged
The use to silver paste is reduced in the case of holding normal function, has saved cost, while by the way that resin is arranged in hollow out section
Content is more than the strengthening segment of the content of resin in solid-section, so that the welding procedure of main gate line is carried out at strengthening segment, specifically may be used
The welding used in welding procedure to be welded in strengthening segment, so as to the case where ensureing main gate line electric conductivity
Under, welding pulling force of the promotion main gate line in weld.
Description of the drawings
Fig. 1 is the structural schematic diagram for the solar cell primary gate electrode that the utility model embodiment provides；
Fig. 2 is a kind of partial enlarged view of main gate line in embodiment；
Fig. 3 is the partial enlarged view of main gate line in another embodiment.
Reference sign：
100- main gate line 110- solid-section 120- hollow out sections
The thin grid lines of 130- strengthening segments 140- connection grid line 200-
Specific implementation mode
The embodiments of the present invention are described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning
Same or similar element or element with the same or similar functions are indicated to same or similar label eventually.Below by ginseng
The embodiment for examining attached drawing description is exemplary, and is only used for explaining the utility model, and cannot be construed to the utility model
Limitation.
Referring to Fig. 1 to Fig. 3, the utility model embodiment provides a kind of solar cell primary gate electrode, packet
Include orthogonal main gate line 100 and thin grid line 200, wherein main gate line 100 includes solid-section 110 and hollow out section 120, solid
Section 110 and hollow out section 120 distribute alternately；Main gate line 100 further includes strengthening segment 130, and strengthening segment 130 is arranged in hollow out section 120；
The weight of resin is more than the weight of resin in solid-section 110 in strengthening segment 130.
It will be appreciated by persons skilled in the art that main gate line 100 is to be printed on silver paste by silk-screen printing technique
It is formed on transparency conducting layer, and the main component of silver paste is silver paste and resin, wherein silver paste has stronger electric conductivity,
To realize the electric conductivity of main gate line 100, and resin then improves stronger combination between main gate line 100 and transparency conducting layer
Power, in welding procedure, improve the welding pulling force of main gate line 100.But main gate line 100 in the prior art is usually
For the grid line of an entity, although entity grid line is conducive to promote fixed reliability and welding pulling force, but waste a large amount of
Silver paste improves production cost；In addition, if desired further increasing the welding pulling force of main gate line 100, then need to increase silver paste
The content of resin in material, but the content of silver paste can be caused to reduce accordingly, affect the electric conductivity of main gate line 100；If necessary
The electric conductivity for improving main gate line 100 then needs the content for increasing the silver paste in silver paste, but can lead to containing for resin accordingly
Amount reduces, and affects the welding pulling force of main gate line 100.Therefore, it is difficult simultaneous for the electric conductivity of main gate line 100 and welding pulling force
It cares for.
It should be noted that the content of resin refers to that the weight of resin accounts for the ratio of silver paste total weight in silver paste, silver
The content of silver paste refers to that the weight of silver paste accounts for the ratio of silver paste total weight in slurry.
Solar cell primary gate electrode provided in this embodiment can ensure main gate line by the way that hollow out section 120 is arranged
100 maintain to reduce the use to silver paste in the case of normal function, have saved cost, while by being set in hollow out section 120
The strengthening segment 130 for setting ratio shared by weight of the ratio shared by the weight of resin more than resin in solid-section 110, makes main gate line 100
Welding procedure carried out at strengthening segment 130, specifically the welding used in welding procedure can be welded on strengthening segment 130
On, so as in the case where ensureing 100 electric conductivity of main gate line, promoted main gate line 100 weld welding pulling force.
Wherein, in order to ensure that the welding pulling force of strengthening segment 130, the content of the resin in strengthening segment 130 account for used in strengthening segment
The ratio of silver paste total amount can be 25%~30%, and in the present embodiment, resin content accounts for used in strengthening segment in strengthening segment 130
The rate value of silver paste total amount is preferably 28%, and the rate value that silver paste content accounts for silver paste total amount used in strengthening segment is 72%.
And in order to ensure that the electric conductivity of solid-section 110, the content of the resin in solid-section 110 account for silver paste used in solid-section
The ratio of total amount can be 10%~15%, and in the present embodiment, resin content accounts for silver paste used in solid-section in solid-section 110
The rate value of total amount is preferably 12%, and the rate value that silver paste content accounts for silver paste total amount used in solid-section is 88%.
Specifically, in one embodiment, as shown in Fig. 2, the both ends of strengthening segment 130 can respectively with hollow out section 120
The solid-section 110 at both ends is connected directly, and welding is welded in strengthening segment 130.Specifically, during depositing main gate line 100,
The solid-section 110 that silk-screen printing technique is formed in main gate line 100 can be first passed through, then by gluing process at hollow out section 120
Strengthening segment 130 is formed, the both ends of strengthening segment 130 is made to be connected respectively with the solid-section 110 at 120 both ends of hollow out section.But solid-section
110 are mainly formed by silk-screen halftone, and the structure of silk-screen halftone is the structure of main gate line 100 after defining silk-screen printing, and right
For the main gate line 100 of this structure type, disjunct region is hollow out section 120 between two neighboring solid-section 110,
Should also have the structure design for forming hollow out section 120 on silk-screen halftone accordingly, this has the design of silk-screen halftone
Larger difficulty, and the structural strength of such silk-screen halftone is weaker, is easy to damage in use, and then damage battery
Film layer on chip；In addition, strengthening segment 130 is usually formed by dispenser, due to strengthening segment 130 need to connect it is two neighboring
Solid-section 110, therefore dispenser needs to move longer distance, it reduce the shaping efficiencies of main gate line 100.
In another embodiment, as shown in figure 3, main gate line 100 may include connection grid line 140, the two of strengthening segment 130
End is connected by connecting grid line 140 with the solid-section 110 at 120 both ends of hollow out section respectively.Specifically, connection grid line 140 is set respectively
The both sides in the direction of the width in hollow out section 120 are set, and the both ends for connecting grid line 140 are solid with 120 both ends of hollow out section respectively
Section 110 is connected；Both sides of the strengthening segment 130 in 120 width direction of hollow out section respectively with connect grid line 140 be connected, strengthening segment 130
Both ends on 120 length direction of hollow out section maintain spacing with solid-section 110 respectively.Due to two neighboring solid-section 110 it
Between be connected by connecting grid line 140, it is possible thereby to make the compact-sized of corresponding silk-screen halftone, there is higher structural strength,
Meanwhile both ends of the strengthening segment 130 on 120 length direction of hollow out section maintain spacing with solid-section 110 respectively, to make reinforcement
The length of section 130 is smaller, and dispenser can complete dispensing action in smaller stroke, improves the molding effect of strengthening segment 130
Rate.
It should be noted that as shown in figure 3, the width of strengthening segment 130 be less than or equal to solid-section 110 width, to prevent
Only strengthening segment 130 blocks the region other than main gate line 100, influences electric conductivity.
Further, in order to make hollow out section 120 that there is enough welding spaces, while ensureing the electric conductivity of solid-section 110
Can, the length range value of hollow out section 120 can be 10~15mm, and in the present embodiment, the length value of hollow out section 120 is preferably
13mm。
Further, as shown in figure 3, in order to reduce by 130 molding technology difficulty of strengthening segment, while ensureing strengthening segment 130
Structural strength, the length of strengthening segment 130 can be the 1/3~1/2 of the length of hollow out section 120, in the present embodiment, strengthening segment
130 length value is 5mm.
It should be noted that the width range value of solid-section 110 can be 0.6~1mm, and in the width range, main grid
Made when can not only obtain stronger binding force between line 100 and transparency conducting layer, but also the molding of main gate line 100 can be saved
Silver paste.In this embodiment it is preferred that the width value of solid-section 110 is 1mm.
It will be appreciated by persons skilled in the art that the structure of the solar cell primary gate electrode is shown for clarity,
Strengthening segment 130, the length of hollow out section 120 and solid-section 110 or width are not necessarily to scale in Fig. 1 to Fig. 3.
The utility model embodiment additionally provides a kind of solar battery chip, including crystal silicon substrate, and crystal silicon substrate is just
Face and reverse side are respectively arranged with intrinsic amorphous silicon layer, are respectively arranged in the intrinsic amorphous silicon layer of the obverse and reverse of crystal silicon substrate
It is respectively arranged with transparency conducting layer on N-type non-crystalline silicon layer and P-type non-crystalline silicon layer, N-type non-crystalline silicon layer and P-type non-crystalline silicon layer, wherein
The solar battery chip further includes the solar cell primary gate electrode that the utility model embodiment provides, solar cell main grid
Electrode is arranged over transparent conductive layer.
The solar cell primary gate electrode that the utility model embodiment provides can ensure to lead by the way that hollow out section is arranged
Grid line maintains to reduce the use to silver paste in the case of normal function, has saved cost, while by being arranged in hollow out section
The content of resin is more than the strengthening segment of the content of resin in solid-section, and the welding procedure of main gate line is made to be carried out at strengthening segment, has
The welding used in welding procedure can be welded on to body in strengthening segment, so as to ensure main gate line electric conductivity
In the case of, welding pulling force of the promotion main gate line in weld.
The structure, feature and effect of the utility model are described in detail based on the embodiments shown in the drawings, with
Upper described is only the preferred embodiment of the utility model, but the utility model is to limit practical range shown in drawing, it is every according to
Change made by conception according to the utility model, or be revised as the equivalent embodiment of equivalent variations, still without departing from specification and figure
When showing covered spirit, it should be within the protection scope of the present utility model.
Claims (8)
1. a kind of solar cell primary gate electrode, including main gate line and thin grid line, the main gate line is mutually hung down with the thin grid line
Directly, which is characterized in that the main gate line includes solid-section and hollow out section, and the solid-section and the hollow out section distribute alternately；
The main gate line further includes strengthening segment, and the strengthening segment is arranged in the hollow out section；
Ratio shared by the weight of resin is more than in the solid-section ratio shared by the weight of resin in the strengthening segment.
2. solar cell primary gate electrode according to claim 1, which is characterized in that the both ends of the strengthening segment respectively with
The solid-section at hollow out section both ends is connected directly.
3. solar cell primary gate electrode according to claim 1, which is characterized in that the main gate line includes connection grid
The both ends of line, the strengthening segment are connected by the connection grid line with the solid-section at hollow out section both ends respectively.
4. solar cell primary gate electrode according to claim 3, which is characterized in that the width of the strengthening segment be less than or
Equal to the width of the solid-section.
5. solar cell primary gate electrode according to claim 3, which is characterized in that the length range value of the hollow out section
For 10~15mm.
6. solar cell primary gate electrode according to claim 5, which is characterized in that the length of the strengthening segment is described
The 1/3~1/2 of the length of hollow out section.
7. solar cell primary gate electrode according to claim 1, which is characterized in that the width range value of the solid-section
For 0.6~1mm.
8. a kind of solar battery chip, including crystal silicon substrate, the obverse and reverse of the crystal silicon substrate is respectively arranged with intrinsic
Amorphous silicon layer is respectively arranged with N-type non-crystalline silicon layer in the intrinsic amorphous silicon layer of the obverse and reverse of the crystal silicon substrate and p-type is non-
It is respectively arranged with transparency conducting layer on crystal silicon layer, the N-type non-crystalline silicon layer and the P-type non-crystalline silicon layer, which is characterized in that described
Solar battery chip further includes claim 1-7 any one of them solar cell primary gate electrodes, the solar cell
Primary gate electrode is arranged on the transparency conducting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721628784.8U CN207637807U (en) | 2017-11-29 | 2017-11-29 | Solar cell primary gate electrode and solar battery chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721628784.8U CN207637807U (en) | 2017-11-29 | 2017-11-29 | Solar cell primary gate electrode and solar battery chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207637807U true CN207637807U (en) | 2018-07-20 |
Family
ID=62855002
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721628784.8U Active CN207637807U (en) | 2017-11-29 | 2017-11-29 | Solar cell primary gate electrode and solar battery chip |
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| Country | Link |
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| CN (1) | CN207637807U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111081794A (en) * | 2019-11-29 | 2020-04-28 | 晋能清洁能源科技股份公司 | Positive half tone of solar cell panel |
| CN113871495A (en) * | 2021-08-16 | 2021-12-31 | 东方日升新能源股份有限公司 | Heterojunction battery piece, processing method thereof and battery assembly |
-
2017
- 2017-11-29 CN CN201721628784.8U patent/CN207637807U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111081794A (en) * | 2019-11-29 | 2020-04-28 | 晋能清洁能源科技股份公司 | Positive half tone of solar cell panel |
| CN113871495A (en) * | 2021-08-16 | 2021-12-31 | 东方日升新能源股份有限公司 | Heterojunction battery piece, processing method thereof and battery assembly |
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Effective date of registration: 20210107 Address after: 101102 102-lq307, 1-3 / F, building 26, 17 huanke Middle Road, Jinqiao Science and technology industrial base, Tongzhou Park, Zhongguancun Science and Technology Park, Tongzhou District, Beijing Patentee after: Deyun Chuangxin (Beijing) Technology Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing Economic and Technological Development Zone, No. 66 Building, No. 2 Jingyuan North Street, 7th Floor 805 Patentee before: Juntai innovation (Beijing) Technology Co.,Ltd. |