CN102738302A - Method for forming electrodes of heterojunction with intrinsic thin layer (HIT) solar cell - Google Patents
Method for forming electrodes of heterojunction with intrinsic thin layer (HIT) solar cell Download PDFInfo
- Publication number
- CN102738302A CN102738302A CN2012101972868A CN201210197286A CN102738302A CN 102738302 A CN102738302 A CN 102738302A CN 2012101972868 A CN2012101972868 A CN 2012101972868A CN 201210197286 A CN201210197286 A CN 201210197286A CN 102738302 A CN102738302 A CN 102738302A
- Authority
- CN
- China
- Prior art keywords
- silver
- electrode
- impression
- hit
- printing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a method for forming electrodes of heterojunction with intrinsic thin layer (HIT) solar cell. The method comprises the following steps of: firstly, printing and drying front fine grid electrodes for the first time on the HIT solar cell on which an indium tin oxide (ITO) film is formed; secondly, only printing a main grid electrode or simultaneously printing the main grid electrode and printing the fine grid electrodes for the second time, and drying, wherein the content of silver in silver slurry which is used when the main grid is printed for the second time is relatively low compared with that of silver in silver slurry which is used when the fine grids are printed for the first time; then, printing a back silver electrode by the same method; and finally, solidifying the silver electrode. By the method, the using amount of the silver is reduced, the battery cost is saved, and the photoelectric conversion efficiency is relatively high; and by a two-time printing technology, the advantages of the two-time printing technology are maintained, and the method is suitable for industrial production.
Description
Technical field
The invention belongs to the formation field of electrode of solar battery, particularly a kind of formation method of HIT electrode of solar battery.
Background technology
Intrinsic amorphous silicon layer heterojunction solar battery (HIT) is a kind of novel high-efficiency crystal silicon solar cell; It adopts n type monocrystalline silicon as cell substrate; Photoelectric conversion efficiency can reach more than 23%; Being higher than present conventional crystal silicon solar cell far away, having very competitive development prospect, is one of high performance solar batteries of approving very much of present solar cell industry circle.HIT generally adopts symmetrical structure, has all adopted extremely thin amorphous silicon membrane to come same substrate (general n type) to form pn knot (front) and back of the body electric field (back side) the two-sided of battery.Because the lateral resistance of amorphous silicon membrane is very big; Therefore can not be as common crystal silicon solar energy battery; Directly on amorphous silicon film layer, form thin gate electrode, must after forming nesa coating on the amorphous silicon membrane, (for example ITO) republish the palisade silver electrode.Nesa coating (commonly used ITO) forms the Window layer photo-generated carrier collecting layer of holding concurrently.
The same with common crystal silicon solar energy battery, gate-shaped electrode is divided into thin grid and main grid.The former is carrier collection and output electrode, and the latter mainly is responsible for the parallel connection and the welding of thin gate electrode.Because what the HIT battery adopted is low-temperature fabrication, therefore the silver slurry belongs to low temperature curing resin type silver slurry, and curing temperature is lower than 200 degree.
The silver content of the silver electrode paste of HIT solar cell is higher, and use amount is big, is the major reason that the battery cost rises.In addition, in order fully to guarantee the printing fineness of electrode, the one-step print technology can not guarantee the continuity of thin grid line, so secondary printing technology cost HIT battery electrode forms the main flow of technology.In general, the secondary printing mainly is to print thin grid line 2 times.The main grid line is because width own is big, and twice printing of unnecessary use forms, and therefore in fact, the printing of thin grid line and main grid line separates.But twice printing all is with a kind of silver electrode paste in the existing technology, and the purpose of twice printing only is in order when reducing thin grid width, to increase print thickness, so that when increasing battery window rate, keep low electrode resistance.
Summary of the invention
Technical problem to be solved by this invention provides a kind of formation method of HIT electrode of solar battery, and this method has lowered silver-colored use, has practiced thrift the battery cost, and higher photoelectric conversion efficiency is arranged; Owing to adopted the secondary printing technology, continued the advantage of secondary printing technology, and suitable suitability for industrialized production.
The formation method of a kind of HIT electrode of solar battery of the present invention comprises:
On the HIT solar cell that forms the ITO film, at first just carry out the first impression in the face of thin gate electrode, oven dry is only printed the main grid electrode then and is perhaps printed the main grid electrode simultaneously and thin gate electrode is carried out the second impression, oven dry; Wherein, the main grid of the second impression is lower with the silver content of silver slurry than the thin grid of the first impression with the silver slurry; With identical printing process printed back silver electrode, be cured at last then, get final product.
The main grid of the said second impression is used the silver content low 1 ~ 10% of silver slurry than the thin grid of the first impression with the silver slurry.
The main grid of the said second impression is used the silver content low 5% of silver slurry than the thin grid of the first impression with the silver slurry.
The main grid of the said second impression is used the silver content low 10% of silver slurry than the thin grid of the first impression with the silver slurry.
The thin grid special sizing agent of first impression slurry silver content 90%-95% commonly used at present, second impression main grid special sizing agent silver content 80%-89%.
This method adopts different silver electrode pastes to print electrode at twice.The thin grid line of the first impression, second impression main grid line or print main grid line and thin grid line simultaneously, and main grid line and the different silver electrode paste (as shown in Figure 1) of thin grid line employing.The common silver electrode paste with high silver content high conductivity of thin gate electrode printing is collected charge carrier and output as electrode, presents low contact resistance.And the silver electrode paste that the main grid line is adopted only as thin grid and bracing and welding electrode, adopt silver content lower but the good preparing electrode paste of weldability.This method can guarantee that under the situation that the solar cell photoelectric conversion efficiency does not reduce, main grid slurry silver content reduces, and weldability improves simultaneously, has practiced thrift cost.HIT is a kind of novel high-efficiency crystal silicon solar cell; Its electrode is to be printed on the silver electrode on the ito thin film through screen printing technique, can low-temperature setting under the temperature below 200 degree, in order to increase the area of light incident as far as possible; Reducing electrode blocks; Thin gate electrode width is very little, therefore adopts the secondary printing technology to prepare usually, and thin grid and main grid adopt with a kind of electrode slurry.
Beneficial effect
(1) HIT silicon solar battery electrode of the present invention separates the effect of thin grid of electrode and main grid; Guaranteeing that thin gate electrode has under the situation of enough good Ohmic contact; And main grid has under the situation of good weldability; Lower the silver content of the thin grid slurry of the main grid slurry or the second impression; Silver content is lower than once thin grid and starches 1%-10% with silver; Saved the battery cost, and higher photoelectric transformation efficiency has been arranged;
(2) the present invention has continued the advantage of secondary printing technology owing to adopted the secondary printing technology, and suitable suitability for industrialized production.
Description of drawings
The HIT electrode of solar battery sketch map that Fig. 1 makes for the embodiment of the invention 1; Wherein, 1 is silicon chip; 2 for the thin gate electrode of the first impression; 3 for the main grid electrode of the second impression; 4 for the thin gate electrode of the second impression; 5 is ItO.
Embodiment
Below in conjunction with specific embodiment, further set forth the present invention.Should be understood that these embodiment only to be used to the present invention is described and be not used in the restriction scope of the present invention.Should be understood that in addition those skilled in the art can do various changes or modification to the present invention after the content of having read the present invention's instruction, these equivalent form of values fall within the application's appended claims institute restricted portion equally.
Embodiment 1
The thin grid of the first impression are starched with silver: silver content 90%.
Second impression main grid is starched with silver: silver content 85%.
Through the thin grid silver electrode of the positive printing of the monocrystalline silicon of the specification 125mmx125mm after amorphous silicon and the ITO film forming, at first print positive thin gate electrode, selecting the silver content of silver slurry for use is 90%, advances continuous tunnel furnace and dries 150 ℃ of temperature; Print the main grid electrode then simultaneously and thin gate electrode is carried out the second impression, selecting the silver content of silver slurry for use is 85%, advances the continuous tunnel furnace oven dry, 150 ℃ of temperature; With identical printing process printed back silver electrode, be cured at last then, 200 ℃ of temperature get final product.
The thin grid of the first impression are starched with silver: silver content 90%.
Second impression main grid is starched with silver: silver content 80%.
Through the thin grid silver electrode of the positive printing of the monocrystalline silicon of the specification 125mmx125mm after amorphous silicon and the ITO film forming, at first print positive thin gate electrode, selecting the silver content of silver slurry for use is 90%, advances continuous tunnel furnace and dries 150 ℃ of temperature; Print the main grid electrode then simultaneously and thin gate electrode is carried out the second impression, selecting the silver content of silver slurry for use is 80%, advances the continuous tunnel furnace oven dry, 150 ℃ of temperature; With identical printing process printed back silver electrode, be cured at last then, 200 ℃ of temperature get final product.
Comparative example 1
The thin grid of the first impression are starched with silver: silver content 90%.
Second impression main grid is starched with silver: silver content 90%.
Through the thin grid silver electrode of the positive printing of the monocrystalline silicon of the specification 125mmx125mm after amorphous silicon and the ITO film forming, at first print positive thin gate electrode, selecting the silver content of silver slurry for use is 90%, advances continuous tunnel furnace and dries 150 ℃ of temperature; Print the main grid electrode then simultaneously and thin gate electrode is carried out the second impression, selecting the silver content of silver slurry for use is 90%, advances the continuous tunnel furnace oven dry, 150 ℃ of temperature; With identical printing process printed back silver electrode, be cured at last then, 200 ℃ of temperature get final product.
Comparative example 2
The thin grid of the first impression are starched with silver: silver content 85%.
Second impression main grid is starched with silver: silver content 85%.
Through the thin grid silver electrode of the positive printing of the monocrystalline silicon of the specification 125mmx125mm after amorphous silicon and the ITO film forming, at first print positive thin gate electrode, selecting the silver content of silver slurry for use is 85%, advances continuous tunnel furnace and dries 150 ℃ of temperature; Print the main grid electrode then simultaneously and thin gate electrode is carried out the second impression, selecting the silver content of silver slurry for use is 85%, advances the continuous tunnel furnace oven dry, 150 ℃ of temperature; With identical printing process printed back silver electrode, be cured at last then, 200 ℃ of temperature get final product.
Characteristic of solar cell is measured as follows;
Embodiment 1: solar battery efficiency 19.79%, electrode adhesion 0.9N, silver slurry use amount 0.15g.
Embodiment 2: solar battery efficiency 19.78%, electrode adhesion 0.85N, silver slurry use amount 0.15g.
Comparative example 1: solar battery efficiency 19.77%, electrode adhesion 0.8N, silver slurry use amount 0.2g.
Comparative example 2: solar battery efficiency 19.21%, electrode adhesion 0.85N, silver slurry use amount 0.15g.
The main grid weldability is all good.
Visible by The above results, main grid adopts the slurry of low silver content, because the slurry solid content reduces; Printing characteristic improves, and the adhesive force of electrode is increased, and the slurry of comparing full employing high silver content forms electrode; Under the constant basically situation of efficient, consumption reduces significantly, practices thrift cost.Certainly, if all adopt the low silver content slurry of main grid to form electrode, efficient can be affected.The method that the present invention proposes has contribution to the cost degradation of HIT battery.
Claims (4)
1. the formation method of a HIT electrode of solar battery comprises:
On the HIT solar cell that forms the ITO film, at first just carry out the first impression in the face of thin gate electrode, oven dry is only printed the main grid electrode then and is perhaps printed the main grid electrode simultaneously and thin gate electrode is carried out the second impression, oven dry; Wherein, the main grid of the second impression is lower with the silver content of silver slurry than the thin grid of the first impression with the silver slurry; With identical printing process printed back silver electrode, be cured at last then, get final product.
2. the formation method of a kind of HIT electrode of solar battery according to claim 1 is characterized in that: the main grid of the said second impression is used the silver content low 1 ~ 10% of silver slurry than the thin grid of the first impression with the silver slurry.
3. the formation method of a kind of HIT electrode of solar battery according to claim 2 is characterized in that: the main grid of the said second impression is used the silver content low 5% of silver slurry than the thin grid of the first impression with the silver slurry.
4. the formation method of a kind of HIT electrode of solar battery according to claim 2 is characterized in that: the main grid of the said second impression is used the silver content low 10% of silver slurry than the thin grid of the first impression with the silver slurry.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101972868A CN102738302A (en) | 2012-06-15 | 2012-06-15 | Method for forming electrodes of heterojunction with intrinsic thin layer (HIT) solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012101972868A CN102738302A (en) | 2012-06-15 | 2012-06-15 | Method for forming electrodes of heterojunction with intrinsic thin layer (HIT) solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102738302A true CN102738302A (en) | 2012-10-17 |
Family
ID=46993447
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012101972868A Pending CN102738302A (en) | 2012-06-15 | 2012-06-15 | Method for forming electrodes of heterojunction with intrinsic thin layer (HIT) solar cell |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102738302A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103144453A (en) * | 2012-11-23 | 2013-06-12 | 中利腾晖光伏科技有限公司 | Split type battery film printing method and equipment |
| CN104157729A (en) * | 2014-07-22 | 2014-11-19 | 广东爱康太阳能科技有限公司 | Positive electrode structure of crystal silicon solar battery and printing process thereof |
| CN104600158A (en) * | 2015-01-13 | 2015-05-06 | 福建铂阳精工设备有限公司 | Interconnection method of crystalline silicon battery assembly |
| CN108054222A (en) * | 2017-12-22 | 2018-05-18 | 南通苏民新能源科技有限公司 | A kind of method for making its electrode of HIT solar cells |
| CN109285895A (en) * | 2017-07-20 | 2019-01-29 | 奥特斯维能源（太仓）有限公司 | A kind of test standard film production method and test standard film |
| CN109524483A (en) * | 2018-11-26 | 2019-03-26 | 西安交通大学 | The high-frequency micro-vibration networking densification process of more partial size composite conducting ag paste electrodes |
| CN109616530A (en) * | 2018-11-14 | 2019-04-12 | 晶澳（扬州）太阳能科技有限公司 | A kind of technique for the electrode forming solar battery |
| CN113380904A (en) * | 2021-01-12 | 2021-09-10 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Electrode of silicon heterojunction solar cell, preparation method thereof and cell |
| CN114284381A (en) * | 2020-09-18 | 2022-04-05 | 嘉兴阿特斯技术研究院有限公司 | Heterojunction solar cell and manufacturing method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102270696A (en) * | 2011-05-30 | 2011-12-07 | 合肥海润光伏科技有限公司 | Front electrode secondary overprinting process |
| CN102285263A (en) * | 2011-05-31 | 2011-12-21 | 江苏顺风光电科技有限公司 | Method for printing crystalline silicon solar cell electrodes |
| CN102479883A (en) * | 2009-11-27 | 2012-05-30 | 无锡尚德太阳能电力有限公司 | Method for forming positive electrode of solar cell |
-
2012
- 2012-06-15 CN CN2012101972868A patent/CN102738302A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479883A (en) * | 2009-11-27 | 2012-05-30 | 无锡尚德太阳能电力有限公司 | Method for forming positive electrode of solar cell |
| CN102270696A (en) * | 2011-05-30 | 2011-12-07 | 合肥海润光伏科技有限公司 | Front electrode secondary overprinting process |
| CN102285263A (en) * | 2011-05-31 | 2011-12-21 | 江苏顺风光电科技有限公司 | Method for printing crystalline silicon solar cell electrodes |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103144453A (en) * | 2012-11-23 | 2013-06-12 | 中利腾晖光伏科技有限公司 | Split type battery film printing method and equipment |
| CN104157729A (en) * | 2014-07-22 | 2014-11-19 | 广东爱康太阳能科技有限公司 | Positive electrode structure of crystal silicon solar battery and printing process thereof |
| CN104600158A (en) * | 2015-01-13 | 2015-05-06 | 福建铂阳精工设备有限公司 | Interconnection method of crystalline silicon battery assembly |
| CN104600158B (en) * | 2015-01-13 | 2017-08-15 | 福建铂阳精工设备有限公司 | Interconnection method of crystalline silicon battery assembly |
| CN109285895A (en) * | 2017-07-20 | 2019-01-29 | 奥特斯维能源（太仓）有限公司 | A kind of test standard film production method and test standard film |
| CN108054222A (en) * | 2017-12-22 | 2018-05-18 | 南通苏民新能源科技有限公司 | A kind of method for making its electrode of HIT solar cells |
| CN109616530A (en) * | 2018-11-14 | 2019-04-12 | 晶澳（扬州）太阳能科技有限公司 | A kind of technique for the electrode forming solar battery |
| CN109524483A (en) * | 2018-11-26 | 2019-03-26 | 西安交通大学 | The high-frequency micro-vibration networking densification process of more partial size composite conducting ag paste electrodes |
| CN109524483B (en) * | 2018-11-26 | 2021-05-28 | 西安交通大学 | High-frequency micro-vibration networking compacting method for multi-particle-size composite conductive silver paste electrode |
| CN114284381A (en) * | 2020-09-18 | 2022-04-05 | 嘉兴阿特斯技术研究院有限公司 | Heterojunction solar cell and manufacturing method thereof |
| CN113380904A (en) * | 2021-01-12 | 2021-09-10 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Electrode of silicon heterojunction solar cell, preparation method thereof and cell |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102738302A (en) | Method for forming electrodes of heterojunction with intrinsic thin layer (HIT) solar cell | |
| CN207409506U (en) | A kind of band intrinsic sheet hetero-junction solar cell of generating electricity on two sides | |
| CN104332522B (en) | Graphene double-junction solar battery and preparation method thereof | |
| CN102544128B (en) | Solar cell | |
| CN203250771U (en) | Heterojunction silicon-based solar cell | |
| CN103545386A (en) | Solar cell electrode shape | |
| CN110350054A (en) | A kind of printing process of solar energy crystal-silicon battery slice | |
| CN201112391Y (en) | Electrode of solar energy battery | |
| CN210052747U (en) | Cell structure capable of improving photoelectric conversion efficiency of heterojunction solar cell | |
| CN203850312U (en) | Heterojunction solar cell with selective emitter | |
| CN203277402U (en) | Solar cell light receiving face grate line | |
| CN206878022U (en) | A kind of multi-crystal silicon film solar battery | |
| CN202977494U (en) | Crystalline silicon/amorphous silicon double-face double battery | |
| CN203536448U (en) | Quantum dot silicon doped solar cell | |
| CN207602583U (en) | The gate line electrode structure and solar cell of a kind of solar cell | |
| CN202977433U (en) | Rear main grid line of solar battery piece and solar battery piece | |
| CN206516646U (en) | Strengthen the dereliction grid cell piece solar components of welding effect | |
| CN206441743U (en) | The solar energy that strengthening electric current is collected is without main gate line crystal-silicon battery slice | |
| CN201877454U (en) | Solar cell with HIT (Heterojunction with Intrinsic Thinlayer) structure | |
| CN206432271U (en) | Solar energy is without main gate line crystal-silicon battery slice | |
| CN206727079U (en) | Dereliction grid cell piece solar components | |
| CN204289471U (en) | A kind of crystal silicon solar energy battery structure | |
| CN103117314B (en) | Solar battery sheet | |
| CN103606571A (en) | Method for forming electrodes of IBC solar cell | |
| CN204516780U (en) | Cell piece front gate line structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C05 | Deemed withdrawal (patent law before 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121017 |