CN203536448U - Quantum dot silicon doped solar cell - Google Patents
Quantum dot silicon doped solar cell Download PDFInfo
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- CN203536448U CN203536448U CN201320485625.2U CN201320485625U CN203536448U CN 203536448 U CN203536448 U CN 203536448U CN 201320485625 U CN201320485625 U CN 201320485625U CN 203536448 U CN203536448 U CN 203536448U
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Abstract
The utility model discloses a quantum dot silicon doped solar cell. The solar cell includes a metal aluminum back electrode, a P type crystal silicon layer, a N type crystal silicon layer, a P type quantum dot doped layer, a N type quantum dot doped layer, an antireflection coating and a comb electrode which are arranged from bottom to top. PN junctions are formed between the P type crystal silicon layer and the N type crystal silicon layer, and PN junctions are formed between the P type quantum dot doped layer and the N type quantum dot doped layer. The quantum dot silicon doped solar cell is simple in structure, reasonable in design, high in operability and low in cost, and the quantum dot silicon doped solar cell is suitable for commercial production.
Description
Technical field
The utility model relates to photoelectric semiconductor material and technical field of solar cells, is specifically related to a kind of doped quantum dot silicon solar cell.
Background technology
Along with the fast development of World Economics, people increase day by day to the demand of the energy, and conventional fossil energy is day by day exhausted, and inexhaustible solar energy is undoubtedly the first-selection of human future energy development.At present, for the utilization that is irradiated to the solar energy of earth surface, mainly contain two kinds of modes: photovoltaic generation and photo-thermal power generation, developing more ripe is photovoltaic generation.The device that is electric energy light energy conversion by photovoltaic effect is exactly solar cell.At present, in all solar cells, take silicon as substrate solar cell be that current conversion efficiency is the highest, the photovoltaic device that technology is the most ripe, silicon solar cell accounts for the more than 90% of current world official market.Although silicon solar cell has higher photoelectric conversion efficiency, from theoretical value, also have a certain distance, therefore, how further to improve the photoelectric conversion efficiency of silicon solar cell, reducing costs is the research emphasis of various countries research institution and photovoltaic enterprise.
The photoelectric conversion efficiency of silicon solar cell is subject to the restriction of the factors such as light absorption, carrier transport, carrier collection, affect the reason of silicon solar cell conversion efficiency mainly from two aspects: (1) optical loss, comprises battery front surface reflection loss, the contact shadow loss of grid line and the non-absorption loss water of long-wave band.(2) electricity loss, it comprises, and photo-generated carrier in semiconductor surface and body is compound, the contact resistance of semiconductor and metal grid lines, and the loss of metal and semi-conductive contact resistance etc.This wherein most critical be the sunlight absorption efficiency that improves crystal silicon battery.The band gap of crystalline silicon is 1.12eV, mainly absorbs the sunlight of 600-1000nm, and is not absorbed lower than 600nm with higher than the sunlight of 1000nm, has so just limited the raising of the conversion efficiency of silion cell.The method that improves silion cell conversion efficiency mainly contains light trapping structure, adds antireflective coating, passivation layer is set, increases back surface field and improves the methods such as backing material.
It is wide that semiconductor-quantum-point (QDs) has absorption region, the feature that absorption coefficient is high, thereby it can be as good light absorber.And to the doping that semiconductor-quantum-point carries out metal ion, can improve further the light abstraction width of material, reduce the compound of electron hole pair.Therefore, the semiconductor-quantum-point of doping and crystalline silicon material are combined, form a kind of brand-new doped quantum dot silicon solar cell, will be a simple and easy to do method that improves existing crystal silicon battery conversion efficiency.
Utility model content
The problem existing for prior art, the purpose of this utility model is to provide a kind of doped quantum dot silicon solar cell that can improve photoelectric conversion efficiency.
For achieving the above object, a kind of doped quantum dot silicon solar cell of the utility model, comprises from bottom to up successively: metallic aluminium back electrode, P type crystal silicon layer, N-type crystal silicon layer, P type doped quantum dot layer, N-type doped quantum dot layer, antireflection coatings, comb electrode; Wherein, between P type crystal silicon layer and N-type crystal silicon layer, all form PN junction between P type doped quantum dot layer and N-type doped quantum dot layer.
Further, the crystalline silicon in described P type crystal silicon layer, N-type crystal silicon layer is monocrystalline silicon, polysilicon, amorphous silicon or microcrystal silicon.
Further, described P type doped quantum dot layer is that cuprum doped with sulfureousization is plumbous, the nano-particle layer of mercury doping vulcanized lead, cuprum doped with sulfureous cadmium or magnesium doped cadmium sulfide.
Further, described N-type doped quantum dot layer is the nano-particle layer of manganese doped cadmium sulfide, phosphorus doping cadmium sulfide, indium doped cadmium sulfide or copper doping indium arsenide.
Further, described comb electrode is arranged on antireflection coatings.
The utility model is simple in structure, reasonable in design, has stronger operability, and cost is lower, is applicable to commercially produce.
Accompanying drawing explanation
Fig. 1 is structural representation of the present utility model.
Embodiment
Below, with reference to accompanying drawing, the utility model is more fully illustrated, shown in the drawings of exemplary embodiment of the present utility model.Yet the utility model can be presented as multiple multi-form, and should not be construed as the exemplary embodiment that is confined to narrate here.But, these embodiment are provided, thereby make the utility model comprehensively with complete, and scope of the present utility model is fully conveyed to those of ordinary skill in the art.
For ease of explanation, here can use such as " on ", the space relative terms such as D score " left side " " right side ", the relation for element shown in key diagram or feature with respect to another element or feature.It should be understood that except the orientation shown in figure, spatial terminology is intended to comprise the different azimuth of device in using or operating.For example, if the device in figure is squeezed, be stated as the element that is positioned at other elements or feature D score will be positioned at other elements or feature " on ".Therefore, exemplary term D score can comprise upper and lower orientation both.Device can otherwise be located (90-degree rotation or be positioned at other orientation), and the relative explanation in space used here can correspondingly be explained.
As shown in Figure 1, a kind of doped quantum dot silicon solar cell of the utility model, its structure is: bottom is metallic aluminium back electrode 1, it on back electrode, is P type crystal silicon layer 2, in addition upper is P type doped quantum dot layer 4 for N-type crystal silicon layer 3 on N-type crystal silicon layer 3, and in addition upper is N-type doped quantum dot layer 5, on N doped quantum dot layer 5, be antireflection coatings 6, antireflection coatings 6 is provided with comb electrode 7.Wherein, between P type crystal silicon layer and N-type crystal silicon layer, all formed PN junction between P type doped quantum dot layer and N-type doped quantum dot layer.
Crystalline silicon in P type crystal silicon layer 2, N-type crystal silicon layer 3 is monocrystalline silicon, polysilicon, amorphous silicon or microcrystal silicon.P type doped quantum dot layer 4 is that cuprum doped with sulfureousization is plumbous, the nano-particle layer of mercury doping vulcanized lead, cuprum doped with sulfureous cadmium or magnesium doped cadmium sulfide.N-type doped quantum dot layer 5 is the nano-particle layer of manganese doped cadmium sulfide, phosphorus doping cadmium sulfide, indium doped cadmium sulfide or copper doping indium arsenide.
Doped semiconductor quantum dot is by in-situ doped realization, after mixing metal ion on the basis of successive ionic layer adsorption and reaction method (Successive Ionic Layer Adsorption and Reaction, SILAR method), deposit on N-type crystalline silicon.
The quantum dot sensitized silica-based solar cell of the utility model can be prepared as follows:
The first step, first carries out chemical cleaning by silicon chip;
Second step, carries out hydrofluoric acid corrosion treatment to silicon chip, forms loose structure, and this loose structure is conducive to the absorption of semiconductor-quantum-point;
The 3rd step, puts into the silicon chip of processing the cation precursor solution 5min of P type doping, takes out after water is rinsed well and puts into anion precursor solution 5min again, takes out water and rinses well.So just formed P type doped quantum dot layer 4.Similarly method, forms N-type doped quantum dot layer 5 by SILAR method;
The 4th step, utilizes PECVD to prepare antireflection coatings 6;
The 5th step, forms metallic aluminium back electrode 1 in the bottom of silicon chip;
The 6th step, silk screen printing forms comb electrode 7, and electrode sintering forms ohmic contact, has so just obtained doped quantum dot silicon solar cell of the present utility model.
The utility model is compared with existing crystal silicon solar battery, and advantage is: between P type crystal silicon layer 2 and N-type crystal silicon layer 3, formed PN junction, also formed PN junction simultaneously between P type doped quantum dot layer 4 and N-type doped quantum dot layer 5, the whole pair PN junction structures that form.Especially P type doped quantum dot layer 4 can suppress the compound of electron hole pair further with the PN junction that N-type doped quantum dot layer 5 forms, doped semiconductor quantum dot can improve spectral absorption scope, the reduction reflection loss of battery in addition, thereby produce more electron-hole pair, improve the various performance parameters of battery, and then improve the photoelectric conversion efficiency of battery.
Claims (5)
1. a doped quantum dot silicon solar cell, is characterized in that, comprises successively from bottom to up: metallic aluminium back electrode, P type crystal silicon layer, N-type crystal silicon layer, P type doped quantum dot layer, N-type doped quantum dot layer, antireflection coatings, comb electrode; Wherein, between P type crystal silicon layer and N-type crystal silicon layer, all form PN junction between P type doped quantum dot layer and N-type doped quantum dot layer.
2. doped quantum dot silicon solar cell as claimed in claim 1, is characterized in that, the crystalline silicon in described P type crystal silicon layer, N-type crystal silicon layer is monocrystalline silicon, polysilicon, amorphous silicon or microcrystal silicon.
3. doped quantum dot silicon solar cell as claimed in claim 1, is characterized in that, described P type doped quantum dot layer is nano-particle layer.
4. doped quantum dot silicon solar cell as claimed in claim 1, is characterized in that, described N-type doped quantum dot layer is nano-particle layer.
5. doped quantum dot silicon solar cell as claimed in claim 1, is characterized in that, described comb electrode is arranged on antireflection coatings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320485625.2U CN203536448U (en) | 2013-08-09 | 2013-08-09 | Quantum dot silicon doped solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201320485625.2U CN203536448U (en) | 2013-08-09 | 2013-08-09 | Quantum dot silicon doped solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538291A (en) * | 2014-12-24 | 2015-04-22 | 上海师范大学 | Method for preparing direct broad-band-gap semiconductor nanocrystalline/Si heterojunction composite crystal silicon wafer |
| CN104600154A (en) * | 2014-12-24 | 2015-05-06 | 上海师范大学 | Preparation method of QDs/Si heterojunction composite crystalline silicon wafer having high quantum efficiency |
-
2013
- 2013-08-09 CN CN201320485625.2U patent/CN203536448U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104538291A (en) * | 2014-12-24 | 2015-04-22 | 上海师范大学 | Method for preparing direct broad-band-gap semiconductor nanocrystalline/Si heterojunction composite crystal silicon wafer |
| CN104600154A (en) * | 2014-12-24 | 2015-05-06 | 上海师范大学 | Preparation method of QDs/Si heterojunction composite crystalline silicon wafer having high quantum efficiency |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140409 Termination date: 20180809 |
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| CF01 | Termination of patent right due to non-payment of annual fee |