CN103400868A - Novel double-layer-film back-passivated solar cell structure - Google Patents
Novel double-layer-film back-passivated solar cell structure Download PDFInfo
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Abstract
The invention discloses a novel double-layer-film back-passivated solar cell structure. The structure comprises silver electrodes, silicon-nitride dielectric films, an aluminum back field and a silicon substrate, wherein a layer of alumina passivation film and a layer of silicon oxynitride passivation film are further arranged on each silicon-nitride dielectric film, and a plurality of grooves are formed in back fields of the silicon-nitride dielectric films, the alumina passivation films and the silicon oxynitride passivation films and are distributed uniformly. The novel double-layer-film back-passivated solar cell structure has the advantage that the photoelectric conversion efficiency of a solar cell is further increased.
Description
Technical field
The present invention relates to a kind of solar battery structure, particularly the dual layer passivation film solar cell structure of a kind of ald aluminium oxide passivation film and PECVD deposition silicon oxynitride passivating film.
Background technology
At present, the conventional solar cell structure, its solar spectrum short wave response and series resistance are conflict all the time, have restricted the photoelectric conversion efficiency of battery.For solving contradiction between the two, people are devoted to the high-efficiency battery of development of new battery structure in recent years, and for example the PESC of University of New South Wales laboratory research and development, the novel battery of PERL structure, make the conversion efficiency of battery reach 24.5%.The selective emitter battery (SE solar cell) of at present industrialization is the further improvement on the basis of conventional batteries, makes battery conversion efficiency improve approximately 0.6%.Selective emitting electrode structure has following advantage: under the metallic electrode grid line, form the highly doped dark diffusion region of phosphorus to form good ohmic contact; In other light area, form the low-doped shallow diffusion region of phosphorus effectively to collect photo-generated carrier, improve the spectral response of battery at short-wave band.This battery structure can improve open circuit voltage Voc, short circuit current Isc and the fill factor, curve factor FF of battery significantly, thereby can make the crystal silicon battery photoelectric conversion efficiency bring up to a new height.Although the selective emitter battery can improve the spectral response of battery at short-wave band greatly, larger in the encapsulation loss of assembly end, be the EVA film due to the glass that need to mate high transmit ultraviolet light at the assembly end and ultraviolet resistance irradiation.Owing at present the glass of manufacturing this high transmit ultraviolet light still being existed to threshold, for generally applying and also have certain difficulty.In addition, for EVA for a long time the aging phenomenon under strong UV-irradiation still need to solve.Therefore, these two kinds of technical barriers have limited the universal of selective emitter battery.Although we are difficult to the short-wave band spectrum of application sunlight, we can develop new technology and improve the efficiency of light energy utilization of battery in long-wave band.For improving the utilance of long-wave band spectrum, must improve the passivation effect of back of the body electric field, strengthen the ability that back surface field is collected charge carrier, improve battery efficiency.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind of novel solar battery structure, has further improved the photoelectric conversion efficiency of solar cell.
The present invention's technical scheme that adopts of dealing with problems is: a kind of novel double-layer film passivating back solar battery structure, comprise silver electrode, silicon nitride medium film, aluminium back surface field, silicon substrate, on described silicon nitride medium film, also be provided with one deck aluminium oxide passivation film and one deck silicon oxynitride passivating film, and being provided with some grooves on the back surface field of described silicon nitride medium film and aluminium oxide passivation film and silicon oxynitride passivating film, described groove is uniformly distributed.
As a kind of preferred, at the thickness of the aluminium oxide passivation film of the backside deposition of described silicon substrate, be 10 ~ 20nm.
As a kind of preferred, the thickness of the silicon oxynitride passivating film that deposits on described aluminium oxide passivation film is 15 ~ 25nm.
Silicon substrate of the present invention is after common process carries out Wafer Cleaning, making herbs into wool, under 800 ℃, carry out low temperature diffusion, sheet resistance is controlled at the light dope emitter of 75 Ω/ left and right, and with wet chemistry method, carry out removal and the edge isolation of phosphorosilicate glass, then utilize the silicon nitride medium film of PECVD method in front surface deposition one deck 75nm left and right, the HF with 1% utilizes technique for atomic layer deposition to carry out to silicon chip the aluminium oxide passivation film that double-sided deposition thickness is 10 ~ 20nm after cleaning 10 ~ 20s; Utilize the PECVD method to be about the silicon oxynitride passivating film of 15 ~ 25nm and the silicon nitride medium film that thickness is 80nm at silicon chip back side while deposit thickness the silicon chip of deposition of aluminium oxide passivating film.Then utilize laser or corrosivity slurry to slot to aluminium oxide and silicon oxynitride passivating film and silicon nitride medium film back of the body electric field, the complete silicon chip of fluting is carried out to the printing of back electrode, aluminium back surface field and positive silver electrode, then sintering, complete the making of new structure cell piece.
The invention has the beneficial effects as follows: at battery front side, the silicon nitride medium film is provided with the aluminium oxide passivation film, namely at front surface, has obtained the structure of double layer antireflection coating, can reduce the reflectivity of cell piece, increases the absorption to light; At cell backside, on the back surface field of silicon nitride medium film and aluminium oxide and silicon oxynitride passivating film, be uniformly distributed and establish groove, the regional aluminium paste of fluting can form aluminium-silicon alloys with silicon, better collect charge carrier, promote the spectral response of battery in long-wave band, not slotted silicon nitride medium film protection aluminium oxide and silicon oxynitride passivating film are not corroded by slurry, and then reach the effect of back surface field passivation; The aluminium oxide passivation film at the back side mainly provides electric field passivation and surface passivation, improves the spectral response of battery in long-wave band; The effect of the main cremasteric reflex device of silicon oxynitride passivating film at the back side, the infrared light that makes to incide back surface field reflexes to silicon chip inside again, recycling.Silicon oxynitride can also make the hydrogen in the silicon nitride medium film be easy to enter silicon inside in the Fast Sintering stage in addition, further promotes passivation effect.
The accompanying drawing explanation
Fig. 1 is a kind of embodiment structural representation of the present invention.
The present invention will be further described below in conjunction with accompanying drawing.
Embodiment
As shown in Figure 1, a kind of novel double-layer film passivating back solar battery structure, comprise silver electrode 1, silicon nitride medium film 5, aluminium back surface field 7, P type silicon substrate 2, on silicon nitride medium film 5, deposit aluminium oxide passivation film 3 and silicon oxynitride passivating film 4, and be uniformly distributed and establish groove 6 on the back surface field of silicon nitride medium film 5 and aluminium oxide passivation film 3 and silicon oxynitride passivating film 4.The thickness of aluminium oxide passivation film 3 is in 10 ~ 20nm scope, and the thickness of silicon oxynitride passivating film is in 15 ~ 25nm scope.
Claims (3)
1. novel double-layer film passivating back solar battery structure, comprise silver electrode (1), silicon nitride medium film (5), aluminium back surface field (7), silicon substrate (2), it is characterized in that: on described silicon nitride medium film (5), also be provided with one deck aluminium oxide passivation film (3) and one deck silicon oxynitride passivating film (4), and being provided with some grooves (6) on the back surface field of described silicon nitride medium film (5) and aluminium oxide passivation film (3) and silicon oxynitride passivating film (4), described groove (6) is uniformly distributed.
2. a kind of novel double-layer film passivating back solar battery structure as claimed in claim 1 is characterized in that: the thickness at the aluminium oxide passivation film (3) of the backside deposition of described silicon substrate (2) is 10 ~ 20nm.
3. a kind of novel double-layer film passivating back solar battery structure as claimed in claim 2 is characterized in that: the thickness at the silicon oxynitride passivating film (4) of the upper deposition of described aluminium oxide passivation film (3) is 15 ~ 25nm.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845747A (en) * | 2016-04-14 | 2016-08-10 | 董友强 | Solar cell structure |
| CN109148643A (en) * | 2018-08-06 | 2019-01-04 | 横店集团东磁股份有限公司 | A method of the PERC battery solving ALD mode is reduced in electrical pumping or light injection behind efficiency |
| CN109980046A (en) * | 2019-03-29 | 2019-07-05 | 山西潞安太阳能科技有限责任公司 | Monocrystalline PERC battery carries on the back passivating structure |
| CN110444609A (en) * | 2019-07-02 | 2019-11-12 | 天津爱旭太阳能科技有限公司 | A kind of back side film layer structure, preparation method, purposes and the solar battery of resisting potential induced degradation |
| US11437529B2 (en) | 2020-12-29 | 2022-09-06 | Zhejiang Jinko Solar Co., Ltd. | Photovoltaic cell, method for manufacturing same, and photovoltaic module |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148263A (en) * | 2011-03-16 | 2011-08-10 | 常州天合光能有限公司 | Double-layer silicon-rich SiNx back passivation structure and process thereof |
| CN102290473A (en) * | 2011-07-06 | 2011-12-21 | 中国科学院上海技术物理研究所 | Back point contact crystalline silicon solar cell and preparation method thereof |
| EP2484803A1 (en) * | 2011-02-07 | 2012-08-08 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of deposition of Al2O3/SiO2 stacks, from aluminium and silicon precursors |
| CN102881754A (en) * | 2012-09-27 | 2013-01-16 | 奥特斯维能源（太仓）有限公司 | Back point contact cell with bubbling-free aluminum oxide and preparation method thereof |
| CN102969390A (en) * | 2012-08-27 | 2013-03-13 | 横店集团东磁股份有限公司 | Windowing process of solar crystalline silicon battery |
| CN102969367A (en) * | 2012-12-12 | 2013-03-13 | 泰通(泰州)工业有限公司 | P-type silicon back passive film of crystalline silicon solar cell and preparation method thereof |
| CN203325916U (en) * | 2013-07-08 | 2013-12-04 | 浙江晶科能源有限公司 | Novel double-layer film back surface passivated solar cell structure |
-
2013
- 2013-07-08 CN CN2013102827743A patent/CN103400868A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2484803A1 (en) * | 2011-02-07 | 2012-08-08 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method of deposition of Al2O3/SiO2 stacks, from aluminium and silicon precursors |
| CN102148263A (en) * | 2011-03-16 | 2011-08-10 | 常州天合光能有限公司 | Double-layer silicon-rich SiNx back passivation structure and process thereof |
| CN102290473A (en) * | 2011-07-06 | 2011-12-21 | 中国科学院上海技术物理研究所 | Back point contact crystalline silicon solar cell and preparation method thereof |
| CN102969390A (en) * | 2012-08-27 | 2013-03-13 | 横店集团东磁股份有限公司 | Windowing process of solar crystalline silicon battery |
| CN102881754A (en) * | 2012-09-27 | 2013-01-16 | 奥特斯维能源（太仓）有限公司 | Back point contact cell with bubbling-free aluminum oxide and preparation method thereof |
| CN102969367A (en) * | 2012-12-12 | 2013-03-13 | 泰通(泰州)工业有限公司 | P-type silicon back passive film of crystalline silicon solar cell and preparation method thereof |
| CN203325916U (en) * | 2013-07-08 | 2013-12-04 | 浙江晶科能源有限公司 | Novel double-layer film back surface passivated solar cell structure |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105845747A (en) * | 2016-04-14 | 2016-08-10 | 董友强 | Solar cell structure |
| CN109148643A (en) * | 2018-08-06 | 2019-01-04 | 横店集团东磁股份有限公司 | A method of the PERC battery solving ALD mode is reduced in electrical pumping or light injection behind efficiency |
| CN109148643B (en) * | 2018-08-06 | 2021-02-09 | 横店集团东磁股份有限公司 | Method for solving problem of efficiency reduction of PERC battery in ALD mode after electric injection or light injection |
| CN109980046A (en) * | 2019-03-29 | 2019-07-05 | 山西潞安太阳能科技有限责任公司 | Monocrystalline PERC battery carries on the back passivating structure |
| CN110444609A (en) * | 2019-07-02 | 2019-11-12 | 天津爱旭太阳能科技有限公司 | A kind of back side film layer structure, preparation method, purposes and the solar battery of resisting potential induced degradation |
| CN110444609B (en) * | 2019-07-02 | 2021-03-02 | 天津爱旭太阳能科技有限公司 | Back film layer structure resisting potential induced attenuation, preparation method and application thereof, and solar cell |
| US11437529B2 (en) | 2020-12-29 | 2022-09-06 | Zhejiang Jinko Solar Co., Ltd. | Photovoltaic cell, method for manufacturing same, and photovoltaic module |
| US11600731B2 (en) | 2020-12-29 | 2023-03-07 | Zhejiang Jinko Solar Co., Ltd. | Photovoltaic cell, method for manufacturing same, and photovoltaic module |
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Application publication date: 20131120 |