CN109980046A - Monocrystalline PERC battery carries on the back passivating structure - Google Patents
Monocrystalline PERC battery carries on the back passivating structure Download PDFInfo
- Publication number
- CN109980046A CN109980046A CN201910248527.9A CN201910248527A CN109980046A CN 109980046 A CN109980046 A CN 109980046A CN 201910248527 A CN201910248527 A CN 201910248527A CN 109980046 A CN109980046 A CN 109980046A
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- China
- Prior art keywords
- pecvd
- passivating
- silicon oxynitride
- temperature
- monocrystalline perc
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- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 18
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 18
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 17
- 239000010703 silicon Substances 0.000 claims abstract description 17
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 12
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 4
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000001039 wet etching Methods 0.000 claims abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 8
- 238000002161 passivation Methods 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 1
- 235000013842 nitrous oxide Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The present invention relates to monocrystalline PERC batteries to carry on the back blunt field.Monocrystalline PERC battery carries on the back passivating structure, monocrystalline PERC battery production, according to cleaning and texturing, low pressure diffusion, wet etching, passivating back, front plated film, back side coating film, laser slotting, printing, passivating back process is, deposit the silicon oxynitride layer of 1-3nm thickness at 450 DEG C of temperature by way of PECVD in silicon chip back side first, then the alumina layer for depositing 6-8nm thickness at 450 DEG C of temperature by way of PECVD on silicon oxynitride layer, finally deposits the silicon nitride layer of 100-120nm on silicon oxynitride layer by way of PECVD at 450 DEG C of temperature again.
Description
Technical field
The present invention relates to monocrystalline PERC batteries to carry on the back blunt field.
Background technique
Monocrystalline PERC battery at present in occupation of 60% or more market, efficiency is also stepping up, including selective emitter
Popularization, but further mention efficacious prescriptions to and it is uncertain, so-called contact passivating technique from process complexity, cost angle consideration,
Conditions are not yet ripe for batch application.In monocrystalline PERC battery current technology route, main back passivating technique have aluminium oxide and
The passivation mode of silicon oxynitride, the two has differences, but the reliability for proposing effect amplitude and later period in itself is not much different.By aluminium oxide
It is obviously improved monocrystalline PERC battery efficiency after being passivated respectively with silicon oxynitride, and process costs dramatically increase,
It is believed that two ways need not be selected to be passivated, one need to be only selected.
Summary of the invention
The technical problems to be solved by the present invention are: how further to promote the effect of monocrystalline PERC battery by back passivation
Rate.
The technical scheme adopted by the invention is that: monocrystalline PERC battery back passivating structure, monocrystalline PERC battery production, according to
Cleaning and texturing, low pressure diffusion, wet etching, passivating back, front plated film, back side coating film, laser slotting, printing, passivating back
Process is to deposit the silicon oxynitride layer of 1-3nm thickness at 450 DEG C of temperature by way of PECVD in silicon chip back side first, then
The alumina layer for depositing 6-8nm thickness at 450 DEG C of temperature by way of PECVD on silicon oxynitride layer, finally again in nitrogen oxygen
Deposit the silicon nitride layer of 100-120nm on SiClx layer at 450 DEG C of temperature by way of PECVD.
The beneficial effects of the present invention are: look for another way have found it is a kind of it is different mention efficacious prescriptions to, using current aluminium oxide with
Silicon oxynitride back passivation, is tested by analysis, establishes a kind of new battery back passivating structure model, this battery model has two kinds
The advantage of passivation is carried on the back, superposition behind efficiency is further promoted.Passivation layer, PERC single crystal battery piece are superimposed using the method for the present invention
Efficiency can promote 0.3% or more again.
Specific embodiment
Embodiment 1
Entire process flow is according to existing battery production technology, cleaning and texturing, low pressure diffusion, wet etching, back side nitrogen oxidation
Silicon passivation, front plated film, back side coating film, laser slotting, printing, 100 monocrystalline PERC battery obtained, average light conversion effect
Rate is 19.8%.
Embodiment 2
The back side uses aluminium oxide passivation, and other techniques are identical with embodiment 1,100 monocrystalline PERC battery obtained, puts down
Equal light conversion efficiency is 19.9%.
Embodiment 3
The back side is using superposition passivation, and other techniques are identical with embodiment 1,100 monocrystalline PERC battery obtained, is averaged
Light conversion efficiency is 20.3%.
Wherein superposition passivation the specific steps are
First with the mode depositing silicon oxynitride silicon layer of PECVD.450 DEG C of depositing temperature, deposition pressure 1700mTorr, silane flow
Measure 600-800sccm, laughing gas flow 300-500sccm, time 50-70s.
The aluminum oxide layer in the way of PECVD.Radio-frequency power 450w is deposited, 350-450 DEG C of depositing temperature, deposition is pressed
Power 10-12pa, TMA flow 300-400sccm, oxygen flow 400-500sccm, nitrogen flow 350-400sccm, sedimentation time
8-10s。
The deposited silicon nitride layer in the way of PECVD.Radio-frequency power 9000w is deposited, 450-480 DEG C of depositing temperature, is deposited
Pressure 1700mtorr, ammonia flow 6.8slm, silane flow rate 680sccm, sedimentation time 800-950s.
Claims (1)
1. monocrystalline PERC battery carry on the back passivating structure, monocrystalline PERC battery production, according to cleaning and texturing, low pressure diffusion, wet etching,
Passivating back, front plated film, back side coating film, laser slotting, printing, it is characterised in that: passivating back process is, first in silicon wafer
The back side deposits the silicon oxynitride layer of 1-3nm thickness by way of PECVD at 450 DEG C of temperature, then leads on silicon oxynitride layer
The mode for crossing PECVD deposits the alumina layer of 6-8nm thickness at 450 DEG C of temperature, finally passes through PECVD on silicon oxynitride layer again
Mode the silicon nitride layer of 100-120nm is deposited at 450 DEG C of temperature.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910248527.9A CN109980046A (en) | 2019-03-29 | 2019-03-29 | Monocrystalline PERC battery carries on the back passivating structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910248527.9A CN109980046A (en) | 2019-03-29 | 2019-03-29 | Monocrystalline PERC battery carries on the back passivating structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109980046A true CN109980046A (en) | 2019-07-05 |
Family
ID=67081565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910248527.9A Pending CN109980046A (en) | 2019-03-29 | 2019-03-29 | Monocrystalline PERC battery carries on the back passivating structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109980046A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112071928A (en) * | 2020-09-11 | 2020-12-11 | 晋能清洁能源科技股份公司 | Preparation method of PERC battery piece |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103400868A (en) * | 2013-07-08 | 2013-11-20 | 浙江晶科能源有限公司 | Novel double-layer-film back-passivated solar cell structure |
| DE102012107472A1 (en) * | 2012-08-15 | 2014-02-20 | Solarworld Innovations Gmbh | Solar cell for solar panel, has dielectric layer provided with openings through which electrical layer is contacted with backside of silicon substrate, and p-doped back-side selective emitter provided at silicon substrate |
| CN106816480A (en) * | 2015-12-01 | 2017-06-09 | 英稳达科技股份有限公司 | The solar cell and its manufacture method of tool emitter-base bandgap grading and passivating back |
| CN107256898A (en) * | 2017-05-18 | 2017-10-17 | 广东爱康太阳能科技有限公司 | Tubular type PERC double-sided solar batteries and preparation method thereof and special equipment |
| CN107845701A (en) * | 2017-11-03 | 2018-03-27 | 常州亿晶光电科技有限公司 | PERC cell backsides AL2O3It is superimposed film layer technique |
| CN109509796A (en) * | 2018-12-26 | 2019-03-22 | 苏州腾晖光伏技术有限公司 | A kind of backside passivation film and back side coating film technique for p-type monocrystalline PERC battery |
-
2019
- 2019-03-29 CN CN201910248527.9A patent/CN109980046A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102012107472A1 (en) * | 2012-08-15 | 2014-02-20 | Solarworld Innovations Gmbh | Solar cell for solar panel, has dielectric layer provided with openings through which electrical layer is contacted with backside of silicon substrate, and p-doped back-side selective emitter provided at silicon substrate |
| CN103400868A (en) * | 2013-07-08 | 2013-11-20 | 浙江晶科能源有限公司 | Novel double-layer-film back-passivated solar cell structure |
| CN106816480A (en) * | 2015-12-01 | 2017-06-09 | 英稳达科技股份有限公司 | The solar cell and its manufacture method of tool emitter-base bandgap grading and passivating back |
| CN107256898A (en) * | 2017-05-18 | 2017-10-17 | 广东爱康太阳能科技有限公司 | Tubular type PERC double-sided solar batteries and preparation method thereof and special equipment |
| CN107845701A (en) * | 2017-11-03 | 2018-03-27 | 常州亿晶光电科技有限公司 | PERC cell backsides AL2O3It is superimposed film layer technique |
| CN109509796A (en) * | 2018-12-26 | 2019-03-22 | 苏州腾晖光伏技术有限公司 | A kind of backside passivation film and back side coating film technique for p-type monocrystalline PERC battery |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112071928A (en) * | 2020-09-11 | 2020-12-11 | 晋能清洁能源科技股份公司 | Preparation method of PERC battery piece |
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| PB01 | Publication | ||
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| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20190705 |