CN110061101A - A kind of new and effective battery back passivation technology - Google Patents
A kind of new and effective battery back passivation technology Download PDFInfo
- Publication number
- CN110061101A CN110061101A CN201910394718.6A CN201910394718A CN110061101A CN 110061101 A CN110061101 A CN 110061101A CN 201910394718 A CN201910394718 A CN 201910394718A CN 110061101 A CN110061101 A CN 110061101A
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- Prior art keywords
- layer
- new
- backside oxide
- oxide aluminium
- passivation technology
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- 238000002161 passivation Methods 0.000 title claims abstract description 26
- 238000005516 engineering process Methods 0.000 title claims abstract description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 21
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 18
- 239000004411 aluminium Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 17
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 238000000576 coating method Methods 0.000 claims abstract description 9
- 230000003647 oxidation Effects 0.000 claims abstract description 8
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 6
- 229910000077 silane Inorganic materials 0.000 claims abstract description 6
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- 238000007650 screen-printing Methods 0.000 claims abstract description 4
- 238000001039 wet etching Methods 0.000 claims abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 3
- 238000004140 cleaning Methods 0.000 claims abstract description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 21
- 230000008021 deposition Effects 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 238000004062 sedimentation Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract description 5
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract description 5
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract description 5
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 5
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to monocrystalline PERC battery passivation fields.A kind of new and effective battery back passivation technology, entire process flow is cleaning and texturing, low pressure diffusion, wet etching, two-sided oxidation, backside oxide aluminium, front plated film, back side coating film, laser slotting, silk-screen printing；Backside oxide aluminium refers to using oxidation furnace at 700-800 DEG C, leads under the atmosphere of oxygen, respectively deposits the silicon dioxide layer of one layer of 2-3nm in the upper and lower surface of battery；Backside oxide aluminium refers in the way of PECVD, deposits the alumina layer of one layer of 15-20nm on the basis of silica in lower surface；Front plated film and back side coating film refer in the way of PECVD at 450-480 DEG C, leads to silane, ammonia, and in lower surface, alumina layer and upper surface silicon dioxide layer on the basis of respectively deposit the silicon nitride layer of one layer of 100-120nm.
Description
Technical field
The present invention relates to monocrystalline PERC battery passivation fields.
Background technique
After monocrystalline PERC battery becomes mainstream high efficient technology, propose effect and concentrate on the passivation at the positive back side, including contact passivation with
Non-contact passivation, in the process route of the current mainstream of monocrystalline PERC battery, it is blunt that the elecrtonegativity of simple aluminium oxide can form field
Change effect, but interface passivation is weaker, the interface passivation of silica passivation is good, but whole passivation effect is not so good as aluminium oxide
Passivation, simple adds up the two, bad deduction and exemption effect occurs in the two interface, influences passivation effect.
Summary of the invention
The technical problems to be solved by the present invention are: how to provide a kind of passivation of silica and aluminium oxide passivation mixing is blunt
The technique of change.
The technical scheme adopted by the invention is that: a kind of new and effective battery back passivation technology, entire process flow is clear
Wash making herbs into wool, low pressure diffusion, wet etching, two-sided oxidation, backside oxide aluminium, front plated film, back side coating film, laser slotting, silk screen
Printing；Backside oxide aluminium refers to using oxidation furnace at 700-800 DEG C, leads under the atmosphere of oxygen, each in the upper and lower surface of battery
Deposit the silicon dioxide layer of one layer of 2-3nm；Backside oxide aluminium refers in the way of PECVD, the base of silica in lower surface
The alumina layer of one layer of 15-20nm is deposited on plinth；Front plated film and back side coating film refer in the way of PECVD in 450-480
At DEG C, lead to silane, ammonia, alumina layer and upper surface silicon dioxide layer on the basis of respectively deposit one layer of 100- in lower surface
The silicon nitride layer of 120nm.
The process conditions of backside oxide aluminium are 750 DEG C of depositing temperature, pressure 100 mtorr, oxygen-supply quantity 2500-
3000sccm, time 20-30min.
Backside oxide aluminium process conditions are to deposit radio-frequency power 450w, 350-450 DEG C of depositing temperature, deposition pressure 10-
12pa, trimethyl aluminium TMA flow 300-400sccm, oxygen flow 400-500sccm, nitrogen flow 350-400sccm, deposition
Time 20-30s.
The progress at the same time of front plated film and back side coating film, process conditions are deposition radio-frequency power 9000w, depositing temperature
450 DEG C, deposition pressure 1700mtorr, ammonia flow 6.8slm, silane flow rate 680sccm, sedimentation time 800-1000s.
The process conditions of backside oxide aluminium be under 750 DEG C of depositing temperature, 100mtorr pressure condition under, first with
Then 2500-3000sccm stopped being passed through ozone, and was passed through oxygen 20- with 2500-3000sccm by ozone 1-2 minutes
25min。
The beneficial effects of the present invention are: passing through the superposition passivation layer of this patent, efficient PERC single crystal battery piece efficiency can be again
Promote 0.2%.
Specific embodiment
Entire process flow is cleaning and texturing, low pressure diffusion, wet etching, two-sided oxidation, backside oxide aluminium, front plating
Film, back side coating film, laser slotting, silk-screen printing；
The process conditions of backside oxide aluminium be under 750 DEG C of depositing temperature, 100mtorr pressure condition under, first with 2500-
Then 3000sccm stopped being passed through ozone, and was passed through oxygen 20-25min with 2500-3000sccm by ozone 1-2 minutes.
Backside oxide aluminium process conditions are to deposit radio-frequency power 450w, 350-450 DEG C of depositing temperature, deposition pressure 10-
12pa, trimethyl aluminium TMA flow 300-400sccm, oxygen flow 400-500sccm, nitrogen flow 350-400sccm, deposition
Time 20-30s.
The progress at the same time of front plated film and back side coating film, process conditions are deposition radio-frequency power 9000w, depositing temperature
450 DEG C, deposition pressure 1700mtorr, ammonia flow 6.8slm, silane flow rate 680sccm, sedimentation time 800-1000s.
The present invention carries out dual back passivation, oxygen by the collocation that specific process conditions realize aluminium oxide and oxidation technology
SiClx interface passivation, aluminium oxide then realize that field is passivated, and in addition the interface passivation of silica can improve the contact of back electrode, system
Fill factor is substantially improved after making cell piece.
Claims (5)
1. a kind of new and effective battery carries on the back passivation technology, it is characterised in that: entire process flow is cleaning and texturing, low pressure is spread,
Wet etching, two-sided oxidation, backside oxide aluminium, front plated film, back side coating film, laser slotting, silk-screen printing；Backside oxide aluminium is
Refer to using oxidation furnace at 700-800 DEG C, leads under the atmosphere of oxygen, respectively deposit the two of one layer of 2-3nm in the upper and lower surface of battery
Silicon oxide layer；Backside oxide aluminium refers in the way of PECVD, deposits one layer of 15- on the basis of silica in lower surface
The alumina layer of 20nm；Front plated film and back side coating film refer in the way of PECVD at 450-480 DEG C, lead to silane, ammonia
Gas, in lower surface, alumina layer and upper surface silicon dioxide layer on the basis of, respectively deposit the silicon nitride layer of one layer of 100-120nm.
2. a kind of new and effective battery according to claim 1 carries on the back passivation technology, it is characterised in that: the work of backside oxide aluminium
Skill condition is 750 DEG C of depositing temperature, pressure 100 mtorr, oxygen-supply quantity 2500-3000sccm, time 20-30min.
3. a kind of new and effective battery according to claim 1 carries on the back passivation technology, it is characterised in that: backside oxide aluminium technique
Condition is to deposit radio-frequency power 450w, 350-450 DEG C of depositing temperature, deposition pressure 10-12pa, trimethyl aluminium TMA flow 300-
400sccm, oxygen flow 400-500sccm, nitrogen flow 350-400sccm, sedimentation time 20-30s.
4. a kind of new and effective battery according to claim 1 carries on the back passivation technology, it is characterised in that: front plated film and the back side
The progress at the same time of plated film, process conditions are to deposit radio-frequency power 9000w, 450 DEG C of depositing temperature, deposition pressure
1700mtorr, ammonia flow 6.8slm, silane flow rate 680sccm, sedimentation time 800-1000s.
5. a kind of new and effective battery according to claim 1 carries on the back passivation technology, it is characterised in that: the work of backside oxide aluminium
Skill condition be under 750 DEG C of depositing temperature, 100mtorr pressure condition under, first with 2500-3000sccm by ozone 1-2 divide
Then clock stops being passed through ozone, is passed through oxygen 20-25min with 2500-3000sccm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910394718.6A CN110061101A (en) | 2019-05-13 | 2019-05-13 | A kind of new and effective battery back passivation technology |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910394718.6A CN110061101A (en) | 2019-05-13 | 2019-05-13 | A kind of new and effective battery back passivation technology |
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| Publication Number | Publication Date |
|---|---|
| CN110061101A true CN110061101A (en) | 2019-07-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910394718.6A Pending CN110061101A (en) | 2019-05-13 | 2019-05-13 | A kind of new and effective battery back passivation technology |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111564530A (en) * | 2020-06-09 | 2020-08-21 | 山西潞安太阳能科技有限责任公司 | Novel crystalline silicon PERC battery front oxide layer preparation process |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140038339A1 (en) * | 2012-08-06 | 2014-02-06 | Atomic Energy Council-Institute Of Nuclear Energy Research | Process of manufacturing crystalline silicon solar cell |
| CN104681670A (en) * | 2015-03-10 | 2015-06-03 | 北京七星华创电子股份有限公司 | Solar cell surface passivation method |
| CN107658358A (en) * | 2017-09-21 | 2018-02-02 | 东方环晟光伏（江苏）有限公司 | Solar battery back passivation film structure and its generation method |
| CN109192813A (en) * | 2018-08-20 | 2019-01-11 | 常州亿晶光电科技有限公司 | PERC cell backside passivation technology |
| CN109216473A (en) * | 2018-07-20 | 2019-01-15 | 常州大学 | A kind of the surface and interface passivation layer and its passivating method of efficient crystal silicon solar battery |
| CN109585600A (en) * | 2018-11-23 | 2019-04-05 | 浙江昱辉阳光能源江苏有限公司 | A kind of production method of the efficient crystal silicon solar batteries of two-sided PERC |
-
2019
- 2019-05-13 CN CN201910394718.6A patent/CN110061101A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140038339A1 (en) * | 2012-08-06 | 2014-02-06 | Atomic Energy Council-Institute Of Nuclear Energy Research | Process of manufacturing crystalline silicon solar cell |
| CN104681670A (en) * | 2015-03-10 | 2015-06-03 | 北京七星华创电子股份有限公司 | Solar cell surface passivation method |
| CN107658358A (en) * | 2017-09-21 | 2018-02-02 | 东方环晟光伏（江苏）有限公司 | Solar battery back passivation film structure and its generation method |
| CN109216473A (en) * | 2018-07-20 | 2019-01-15 | 常州大学 | A kind of the surface and interface passivation layer and its passivating method of efficient crystal silicon solar battery |
| CN109192813A (en) * | 2018-08-20 | 2019-01-11 | 常州亿晶光电科技有限公司 | PERC cell backside passivation technology |
| CN109585600A (en) * | 2018-11-23 | 2019-04-05 | 浙江昱辉阳光能源江苏有限公司 | A kind of production method of the efficient crystal silicon solar batteries of two-sided PERC |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111564530A (en) * | 2020-06-09 | 2020-08-21 | 山西潞安太阳能科技有限责任公司 | Novel crystalline silicon PERC battery front oxide layer preparation process |
| CN111564530B (en) * | 2020-06-09 | 2022-07-29 | 山西潞安太阳能科技有限责任公司 | Novel crystalline silicon PERC battery front oxide layer preparation process |
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Application publication date: 20190726 |
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