CN105244412A - Passivation method for N-type crystalline silicon cell boron emitter - Google Patents
Passivation method for N-type crystalline silicon cell boron emitter Download PDFInfo
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- CN105244412A CN105244412A CN201510562071.5A CN201510562071A CN105244412A CN 105244412 A CN105244412 A CN 105244412A CN 201510562071 A CN201510562071 A CN 201510562071A CN 105244412 A CN105244412 A CN 105244412A
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 52
- 238000002161 passivation Methods 0.000 title claims abstract description 22
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 71
- 239000010703 silicon Substances 0.000 claims abstract description 71
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 14
- 230000003647 oxidation Effects 0.000 claims abstract description 11
- 238000002360 preparation method Methods 0.000 claims abstract description 11
- 238000009792 diffusion process Methods 0.000 claims description 29
- 229910052698 phosphorus Inorganic materials 0.000 claims description 27
- 239000011574 phosphorus Substances 0.000 claims description 27
- 239000013078 crystal Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 18
- 230000001590 oxidative effect Effects 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 12
- 230000009849 deactivation Effects 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 7
- 238000001039 wet etching Methods 0.000 claims description 7
- 238000004062 sedimentation Methods 0.000 claims description 6
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 4
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 239000005297 pyrex Substances 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims description 2
- 239000007924 injection Substances 0.000 claims description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 7
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 4
- 238000009776 industrial production Methods 0.000 abstract description 2
- 229910004205 SiNX Inorganic materials 0.000 abstract 1
- 239000010408 film Substances 0.000 description 29
- 238000000231 atomic layer deposition Methods 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 5
- 235000008216 herbs Nutrition 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000415 inactivating effect Effects 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention provides a passivation method for an N-type crystalline silicon cell boron emitter. The passivation steps are listed as follows: a phosphor doped N+ layer and a boron emitter P+ layer are respectively formed on the two surfaces of an N-type silicon substrate; then oxidation and passivation processing is performed on the N-type silicon substrate, and a silicon oxide film is respectively generated on the phosphor doped N+ layer and the boron emitter P+ layer; and finally a SiNx film is deposited on the silicon oxide film of the two surfaces of the N-type silicon substrate. A silicon dioxide and silicon nitride laminated film acts as the passivation film of the boron emitter, wherein silicon dioxide is prepared and generated through low-temperature dry oxidation, thickness is 2-10nm, and silicon nitride is prepared by a PECVD method. The passivation film system preparation technology is relatively simple, preparation process controllability is high, equipment cost is low and consumable cost is low so as to be compatible with current crystalline silicon cell manufacturing production line equipment and suitable for large-scale industrial production.
Description
Technical field
The present invention relates to manufacture of solar cells technical field, particularly a kind of passivating method of N-type crystal silicon battery boron emitter.
Background technology
Current crystal silicon cell is the main product in solar cell market, and crystal silicon solar batteries can be divided into again P type crystal silicon battery and N-type crystal silicon battery material matrix type.Relative to p type single crystal silicon battery, n type single crystal silicon battery has the features such as little, the resistance to metal impurity con performance of photo attenuation is good, minority carrierdiffusion length is long, has huge potentiality in improved efficiency.
For the N-type crystal silicon battery of simple structure, preparation flow normally making herbs into wool-> boron diffusion-> phosphorus diffusion/inject-> passivation-> antireflective coating deposition-> electrode print, wherein most important for the performance of battery to the passivation of boron emitter (P+ layer).The current thin film material system for the passivation of boron emitter and technical method have a lot, and useful atomic layer deposition method (ALD) prepares aluminium oxide (Al
2o
3) film carrys out passivation; Utilize plasma enhanced chemical vapor deposition (PECVD) method depositing Al
2o
3thin film passivation; There is use amorphous silicon hydride (α-Si:H) film to realize passivation; Process in salpeter solution is adopted to prepare the methods such as oxidative deactivation film.But traditional ALD equipment itself has the shortcoming that growth rate is slow, stock utilization is low and equipment price is expensive, incompatible with the solar cell industry of large-scale production, only along with the reduction of technological progress and equipment cost, the ALD equipment of successive sedimentation formula and Al
2o
3thin film passivation technique just can enter manufacture of solar cells.PECVD prepares α-Si:H film and also there is the low and α-Si:H film of the chemical material utilance problem that H loss inactivating performance declines after oversintering.Therefore, the passivating method that inactivating performance is good, process controllability is strong, equipment cost is low, consumables cost is low is sought significant for the large-scale promotion of N-type cell.
Summary of the invention
The present invention aims to provide a kind of passivating method of N-type crystal silicon battery boron emitter, utilize silicon dioxide and silicon nitride stack film as the passivating film of boron emitter, wherein silicon dioxide is oxidized preparation generation by low-temperature dry, and thickness is 2 ~ 10nm, and silicon nitride adopts the preparation of PECVD method.This passivating film system preparation technology is comparatively simple, and process controllability is strong, equipment cost is low, consumables cost is low, can with current crystal silicon cell manufacturing line hardware compatibility, be suitable for large-scale industrial production.
For achieving the above object, the technical solution used in the present invention is:
A passivating method for N-type crystal silicon battery boron emitter, is characterized in that passivation step is as follows:
(1) pass through twice diffusion or ion implantation on the two sides of N-type silicon substrate, form phosphorus doping N+ layer and boron emitter P+ layer on the two sides of N-type silicon substrate respectively;
(2) N-type silicon substrate in step (1) is placed in high purity oxygen gas atmosphere and carries out oxidative deactivation process, on phosphorus doping P+ layer and phosphorus doping N+ layer, generate one deck silicon oxide film by low thermal oxidation respectively;
(3) on the silicon oxide film on N-type silicon substrate two sides, SiN is deposited
xfilm.
Twice diffusion in step (1) refers to: N-type silicon substrate is realized the doping of N-type silicon substrate one side boron by the diffusion of high temperature boron and prepares boron emitter P+ layer; Pyrex layer, the back side diffusion diffraction layer on boron emitter P+ layer surface is removed by wet etching, boron emitter P+ layer prepares phosphorus diffusion mask layer, again phosphorus is carried out to the another side of N-type silicon substrate and diffuse to form phosphorus doping N+ layer, utilize chemical etching method to remove the phosphorosilicate glass layer on phosphorus doping N+ layer surface and the diffusion mask layer of boron transmitting pole-face; Ion implantation in step (1) refers to that N-type silicon substrate is realized the doping of N-type silicon substrate one side boron by the diffusion of high temperature boron prepares boron emitter P+ layer; Removed Pyrex layer, the back side diffusion diffraction layer on boron emitter P+ layer surface by wet etching, then phosphorus injection is carried out to the another side of N-type silicon substrate, activate through process annealing and form phosphorus doping N+ layer.
The thickness of the silicon oxide film generated in step (2) is 2 ~ 10nm.
In step (2), the oxidizing temperature of oxidative deactivation process is 650 DEG C-790 DEG C, and oxygen flow is 0.3-10slm, and oxidization time is 5min-60min.
Deposition in step (3) adopts plasma reinforced chemical vapour deposition method to deposit, and by controlling sedimentary condition, makes SiN
xh is rich in film.
Depositing temperature in step (3) is 400-450 DEG C, and sedimentation time is 8-15min, SiH during deposition
4flow is 500sccm-1700sccm, NH
3flow is 4000sccm-8000sccm, and radio-frequency power is 5000W-7000W, and deposition pressure is 1300-2000mTorr, preparation SiN
xfilm thickness is 65-75nm.
The invention has the beneficial effects as follows:
Utilize silica/silicon nitride stack as the passivation layer of N-type cell boron emitter, in process, silica has low-temperature dry oxidation technology to prepare, and silicon nitride is prepared by PECVD technology.Low-temperature dry oxidation can form thin layer of silicon oxide on boron emitter and phosphorus-diffused layer simultaneously, effectively can reduce the outstanding key density on boron emitter and phosphorus-diffused layer surface, realize passivation while battery front side and the back side; The silicon nitride film being simultaneously rich in H is prepared H in sintering process at battery and is diffused to Si/SiO-
2interface, the outstanding key at boundary saturation place, to boron emitter and the passivation further of phosphorus doping layer surface.Prepare the oxidizing temperature of oxide passivated film at 650 DEG C-790 DEG C, temperature is lower, little to the concentration curve distribution influence of boron diffusion and phosphorus diffusion, is easy to control; Avoid the pyroprocess (850 DEG C ~ 1100 DEG C) of silicon chip experience conventional dry oxidation, minority carrier life time can be kept not decay because of pyroprocess.In addition, the equipment that oxidation uses is tube furnace, is that crystal silicon battery produces the most common equipment of line, with atomic layer deposition apparatus and prepare Al
2o
3the PECVD device of film is compared, cost of equipment and consumptive material expense all very low, therefore low-temperature dry oxidative deactivation is a kind of simple, economic process, is easy to large-scale production.
Accompanying drawing explanation
Fig. 1 is passivation film structural representation of the present invention;
Wherein, accompanying drawing 1 is labeled as: 1 is the SiN on silicon chip two sides
xlayer; 2 is the SiO above P+ layer and N+ layer
2passivation layer; 3 is boron doping emitter P+; 4 is N-type silicon base; 5 is phosphorus doping layer N+.
Embodiment
embodiment 1
As shown in Figure 1, a kind of passivating method of N-type crystal silicon battery boron emitter, comprises the steps:
(1) adopt n type single crystal silicon silicon chip to be substrate, resistivity is 1 ~ 12Wcm, and thickness is 170 ~ 200mm, is cleaned by silicon chip, and remove the damage layer on surface, aqueous slkali carries out making herbs into wool process to silicon chip;
(2) above-mentioned silicon chip is realized the doping of silicon chip one side boron by the diffusion of high temperature boron and prepare boron emitter P+ layer;
(3) remove surface boron silex glass, back side diffusion diffraction layer by wet etching, boron emitter P+ layer prepares phosphorus diffusion mask layer;
(4) utilize the other one side of tube furnace to silicon chip to carry out phosphorus and diffuse to form N+ layer, utilize chemical etching method to remove the phosphorosilicate glass layer on surface and the diffusion mask layer of boron emitter P+ layer;
(5) silicon chip in (4) is put into oxidation furnace and carry out oxidative deactivation process in high purity oxygen gas atmosphere, oxidizing temperature is 650 DEG C-790 DEG C, preferably 720 DEG C, oxidization time is 5min-60min, preferred 25min, oxygen flow is 0.3slm-10slm, preferred 3slm, generate silicon oxide film on silicon chip two sides, thickness is 2-10nm simultaneously;
(6) on the silicon oxide film on silicon chip two sides, SiN is deposited by the method for PECVD
xfilm, depositing temperature is 400-460 DEG C, preferably 450 DEG C, and sedimentation time is 8-15min, preferred 12min, SiH during deposition
4flow is 500sccm-1700sccm, NH
3flow is 4000sccm-8000sccm, and radio-frequency power is 5000W-7000W, and deposition pressure is 1300-2000mTorr, preparation SiN
xfilm thickness is 65-75nm.
embodiment 2
As shown in Figure 1, a kind of passivating method of N-type crystal silicon battery boron emitter, comprises the steps:
(1) adopt n type single crystal silicon silicon chip to be substrate, resistivity is 1 ~ 12Wcm, and thickness is 170 ~ 200mm, is cleaned by silicon chip, and remove the damage layer on surface, aqueous slkali carries out making herbs into wool process to silicon chip;
(2) above-mentioned silicon chip is realized the doping of silicon chip one side boron by the diffusion of high temperature boron and prepare boron emitter P+ layer;
(3) remove surface boron silex glass, back side diffusion diffraction layer by wet etching, utilize the method injected to carry out phosphorus doping in the other one side of silicon chip, after annealing in process, form phosphorus doping N+ layer;
(4) silicon chip in (3) is put into oxidation furnace and carry out oxidative deactivation process in high purity oxygen gas atmosphere, oxidizing temperature is 670 DEG C, and oxidization time is 45min, and oxygen flow is 5slm, generates silicon oxide film on silicon chip two sides simultaneously, and thickness is 2-10nm;
(5) on the silicon oxide film on silicon chip two sides, SiN is deposited by the method for PECVD
xfilm, depositing temperature is 440 DEG C, and sedimentation time is 10min, SiH during deposition
4flow is 1000sccm, NH
3flow is 6000sccm, and radio-frequency power is 5500W, and deposition pressure is 1500mTorr, preparation SiN
xfilm thickness is 65-75nm.
Adopting the method for non-oxidation passivation to obtain the back side, front and all plate silicon nitride structure, is comparative example 1:
(1) adopt n type single crystal silicon to be substrate, resistivity is 1 ~ 12Wcm, and thickness is 170 ~ 200mm, is cleaned by silicon chip, and remove the damage layer on surface, aqueous slkali carries out making herbs into wool process to silicon chip;
(2) above-mentioned silicon chip is realized the doping of silicon chip one side boron by the diffusion of high temperature boron and prepare boron emitter P+;
(3) remove surface boron silex glass, back side diffusion diffraction layer by wet etching, launch on pole-face at boron and prepare phosphorus diffusion mask layer;
(4) utilize the other one side of tube furnace to silicon chip to carry out phosphorus and diffuse to form N+ layer, utilize chemical etching method to remove the phosphorosilicate glass layer on surface and the diffusion mask layer of boron transmitting pole-face;
(5) on the silicon oxide film on silicon chip two sides, SiN is deposited by the method for PECVD
xfilm, depositing temperature is 400-460 DEG C, preferably 450 DEG C, and sedimentation time is 8-15min, preferred 12min, SiH during deposition
4flow is 500sccm-1700sccm, NH
3flow is 4000sccm-8000sccm, and radio-frequency power is 5000W-7000W, and deposition pressure is 1300-2000mTorr, preparation SiN
xfilm thickness is 65-75nm.
Measure minority carrier life time and the potential open circuit voltage (impliedVoc) of silicon chip in above-described embodiment 1 and comparative example 1, the results are shown in shown in following table:
From above-mentioned, adopt the silicon chip of Passivation Treatment of the present invention, its minority carrier life time and potential open circuit voltage are all greatly improved than the silicon chip of non-passivation, technique is relatively simple, and equipment requirement is not high, produces line hardware compatibility with crystal silicon battery, production cost is low, has positive realistic meaning.
Claims (6)
1. a passivating method for N-type crystal silicon battery boron emitter, is characterized in that passivation step is as follows:
(1) pass through twice diffusion or ion implantation on the two sides of N-type silicon substrate, form phosphorus doping N+ layer and boron emitter P+ layer on the two sides of N-type silicon substrate respectively;
(2) N-type silicon substrate in step (1) is placed in high purity oxygen gas atmosphere and carries out oxidative deactivation process, on boron emitter P+ layer and phosphorus doping N+ layer, generate one deck silicon oxide film by low thermal oxidation respectively;
(3) on the silicon oxide film on N-type silicon substrate two sides, SiN is deposited
xfilm.
2. the passivating method of a kind of N-type crystal silicon battery boron emitter according to claim 1, is characterized in that: twice diffusion in step (1) refers to: N-type silicon substrate is realized the doping of N-type silicon substrate one side boron by the diffusion of high temperature boron and prepares boron emitter P+ layer; Pyrex layer, the back side diffusion diffraction layer on boron emitter P+ layer surface is removed by wet etching, boron emitter P+ layer prepares phosphorus diffusion mask layer, again phosphorus is carried out to the another side of N-type silicon substrate and diffuse to form phosphorus doping N+ layer, utilize chemical etching method to remove the phosphorosilicate glass layer on phosphorus doping N+ layer surface and the diffusion mask layer of boron transmitting pole-face; Ion implantation in step (1) refers to that N-type silicon substrate is realized the doping of N-type silicon substrate one side boron by the diffusion of high temperature boron prepares boron emitter P+ layer; Removed Pyrex layer, the back side diffusion diffraction layer on boron emitter P+ layer surface by wet etching, then phosphorus injection is carried out to the another side of N-type silicon substrate, activate through process annealing and form phosphorus doping N+ layer.
3. the passivating method of a kind of N-type crystal silicon battery boron emitter according to claim 1, is characterized in that: the thickness of the silicon oxide film generated in step (2) is 2 ~ 10nm.
4. the passivating method of a kind of N-type crystal silicon battery boron emitter according to claim 1 or 3, it is characterized in that: in step (2), the oxidizing temperature of oxidative deactivation process is 650 DEG C-790 DEG C, oxygen flow is 0.3-10slm, and oxidization time is 5min-60min.
5. the passivating method of a kind of N-type crystal silicon battery boron emitter according to claim 1, is characterized in that: the deposition in step (3) adopts plasma reinforced chemical vapour deposition method to deposit, and by controlling sedimentary condition, makes SiN
xh is rich in film.
6. the passivating method of a kind of N-type crystal silicon battery boron emitter according to claim 1 or 5, is characterized in that: the depositing temperature in step (3) is 400-450 DEG C, and sedimentation time is 8-15min, SiH during deposition
4flow is 500sccm-1700sccm, NH
3flow is 4000sccm-8000sccm, and radio-frequency power is 5000W-7000W, and deposition pressure is 1300-2000mTorr, preparation SiN
xfilm thickness is 65-75nm.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107393976A (en) * | 2017-08-02 | 2017-11-24 | 浙江晶科能源有限公司 | A kind of N-type double-sided solar battery piece and preparation method thereof |
| CN112018206A (en) * | 2020-09-24 | 2020-12-01 | 山西潞安太阳能科技有限责任公司 | N-type crystalline silicon battery structure and preparation process thereof |
| CN114823933A (en) * | 2022-06-30 | 2022-07-29 | 横店集团东磁股份有限公司 | Solar cell structure and manufacturing method thereof |
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| CN103515483A (en) * | 2013-09-09 | 2014-01-15 | 中电电气（南京）光伏有限公司 | Method for preparing crystalline silicon solar cell emitter junction |
| CN104538501A (en) * | 2015-01-15 | 2015-04-22 | 中利腾晖光伏科技有限公司 | N-type double-sided battery and manufacturing method thereof |
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| KR100403803B1 (en) * | 1996-09-06 | 2003-12-18 | 삼성전자주식회사 | NPRIL(n-p and rear inversion layer) bifacial solar cell and method for manufacturing the same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107393976A (en) * | 2017-08-02 | 2017-11-24 | 浙江晶科能源有限公司 | A kind of N-type double-sided solar battery piece and preparation method thereof |
| CN107393976B (en) * | 2017-08-02 | 2019-05-10 | 浙江晶科能源有限公司 | A kind of N-type double-sided solar battery piece and preparation method thereof |
| CN112018206A (en) * | 2020-09-24 | 2020-12-01 | 山西潞安太阳能科技有限责任公司 | N-type crystalline silicon battery structure and preparation process thereof |
| CN114823933A (en) * | 2022-06-30 | 2022-07-29 | 横店集团东磁股份有限公司 | Solar cell structure and manufacturing method thereof |
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