CN105742391B - A kind of tunnelling silica nitrogen layer passivation contact solar cell and preparation method thereof - Google Patents
A kind of tunnelling silica nitrogen layer passivation contact solar cell and preparation method thereof Download PDFInfo
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Abstract
The solar cell that the present invention is provided includes silicon chip, passivation tunnel layer, doping film silicon layer,, Wei Yu the silicon chip and the doping film silicon layer between, the wherein described tunnel layer that is passivated is for the one kind in silica/silicon oxynitride gradient lamination, silicon oxynitride/silicon nitride gradient lamination, silica/silicon oxynitride/silicon nitride gradient lamination for the passivation tunnel layer；The silicon oxynitride is the adulterate silica of nitrogen or the silicon nitride of doping oxygen；The nitrogen concentration of the silica/silicon oxynitride gradient lamination, silicon oxynitride/silicon nitride gradient lamination, silica/silicon oxynitride/silicon nitride gradient lamination is from away from the lateral silicon chip side gradient reduction of silicon chip.As the tunneling barrier of silicon nitride and silicon oxynitride is relatively low, present invention passivation tunnel layer can suitably relax the thickness of passivation tunnel layer on the premise of tunneling efficiency is ensured, so as to advantageously reduce passivation tunnel layer hole, reduce generation and the recombination velocity of leakage current, widen process window and improve technology stability.
Description
Technical field
The present invention relates to area of solar cell, more particularly to a kind of tunnelling silica nitrogen layer passivation contact solar cell
And preparation method thereof.
Background technology
Tunnel oxide passivation contact (Tunnel Oxide Passivated Contact, TOPCon) solar cell
It is a kind of new silicon solar cell for being proposed by German Forlan Hough solar energy research in recent years.Battery adopts n-type silicon chip,
Silicon chip back side covers the silicon oxide layer of one layer of below 2nm as passivation tunnel layer, then covers one layer of doping film silicon layer again, makes
The passivating back of battery.The basic battery structure of tunnel oxide passivation contact solar cell is shown in Figure 1, solar-electricity
The backside structure in pond is followed successively by n-type silicon chip, passivation tunnel layer (silicon oxide layer), doping n-type thin film silicon layer, metal electrode layer.When
When battery operated, electronics is tunneled through passivation tunnel layer from n-type silicon chip and enters in doping n-type thin film silicon layer.Additionally, the research institute
Double-edged design is also disclosed, using p-type floating region silicon chip (Float Zone Silicon, FZ), both sides are directly given birth to
Long silicon oxide layer, deposits the membrane silicon layer of doping afterwards respectively.
At present, tunnel oxide passivation contact solar cell all adopts silica (SiOx, x≤2) and as passivation tunnelling
Layer.Silica generally has good interface passivation effect, is conducive to significantly reducing the recombination velocity of whole silicon chip back surface.So
And, silicon oxide layer as passivation tunnel layer but also in place of Shortcomings, due to the energy gap of silica larger (about 8.9eV),
Electronics and hole transport potential barrier larger, be unfavorable for the transmission in electronics or hole, when as tunnel oxide silicon oxide layer thickness surpass
After crossing 2nm, its tunneling efficiency begins to be remarkably decreased, and affects fill factor, curve factor, in order that electronics can be tunneled through as passivation
The silicon oxide layer of tunnel layer, needs to be made silicon oxide layer very thin, is normally controlled in below 2nm, thus holds in preparation process
Hole is easily formed, so as to cause leakage current to increase, and in subsequent high temperature annealing process, the original such as phosphorus in doping film silicon layer
Son is readily diffused in the silicon oxide layer as passivation tunnel layer, is destroyed as the complete of the silicon oxide layer for being passivated tunnel layer
Property, cause leakage current and compound aggravation；In addition very thin silicon oxide layer defect level density is relatively low, and the positive charge density for carrying is relatively
Low, the field passivation effect to silicon chip weakens.
Content of the invention
Based on this, it is an object of the invention to, for silicon oxide layer as passivation tunnel layer as energy gap causes greatly
Thickness of thin, cracky, be easily caused leakage current, technical problem that compound aggravation and passivation effect weaken, a kind of tunnelling silicon is provided
Oxygen nitrogen layer passivation contact solar cell and preparation method thereof.
The invention provides a kind of tunnelling silica nitrogen layer is passivated contact solar cell, wherein, the solar-electricity
Pond includes silicon chip, passivation tunnel layer, doping film silicon layer, and the passivation tunnel layer is located at the silicon chip and the doping film silicon
Between layer, wherein described passivation tunnel layer is silica/silicon oxynitride gradient lamination, silicon oxynitride/silicon nitride gradient lamination, oxygen
One kind in SiClx/silicon oxynitride/silicon nitride gradient lamination；The silicon oxynitride is the adulterate silica of nitrogen or the nitrogen of doping oxygen
SiClx；The silica/silicon oxynitride gradient lamination, silicon oxynitride/silicon nitride gradient lamination, silica/silicon oxynitride/nitridation
The nitrogen concentration of silicon gradient lamination reduces from the side gradient of the lateral adjacent silicon wafer away from silicon chip.
Wherein in one embodiment, the thickness of the passivation tunnel layer is 0.5～5nm.
Wherein in one embodiment, in the passivation tunnel layer, the diffusion depth of nitrogen is 0.1～5nm.
Wherein in one embodiment, the silica/silicon oxynitride gradient lamination is away from the side 0.2nm of the silicon chip
In depth bounds, the atomic concentration of nitrogen is not less than 20at.%, and the silica/silicon oxynitride gradient lamination is adjacent to the silicon chip
In the 0.2nm depth bounds of side, the atomic concentration of nitrogen is not higher than 5at.%.
Wherein in one embodiment, the side away from the silicon chip of the silicon oxynitride/silicon nitride gradient lamination
In 0.2nm depth bounds, the atomic concentration of nitrogen is 30～57.1at.%, and the silicon oxynitride/silicon nitride gradient lamination is adjacent to institute
The atomic concentration for stating nitrogen in the side 0.2nm depth bounds of silicon chip is 5～30at.%, the atomic concentration of oxygen is 10～
40at.%.
Wherein in one embodiment, the silica/silicon oxynitride/silicon nitride gradient lamination is away from the one of the silicon chip
In the 0.2nm depth bounds of side, the atomic concentration of nitrogen is 30～57.1at.%, and the silica/silicon oxynitride/silicon nitride gradient is folded
In the side 0.2nm depth bounds of the neighbouring silicon chip of layer, the atomic concentration of nitrogen is not higher than 5at.%.
Present invention also offers a kind of tunnelling silica nitrogen layer is passivated the preparation method of contact solar cell, the solar energy
Battery includes silicon chip, passivation tunnel layer, doping film silicon layer, and the passivation tunnel layer is located at the silicon chip and the doping film
Between silicon layer, the preparation method of wherein described passivation tunnel layer is comprised the following steps：Silicon oxide layer is generated in the silicon chip surface,
Then in the silicon oxide layer Surface Creation silicon oxynitride layer or silicon nitride layer, afterwards the product for obtaining is made annealing treatment；
Or silicon oxynitride layer is generated in the silicon chip surface, then in the silicon oxynitride Surface Creation silicon nitride layer, incite somebody to action afterwards
To product made annealing treatment；Or silicon oxide layer is generated in the silicon chip surface, then give birth on the silicon oxide layer surface
Become silicon oxynitride layer, then in the silicon oxynitride layer Surface Creation silicon nitride layer, the product for obtaining is carried out at annealing afterwards
Reason.
In one embodiment of the invention, described in silicon chip surface generation silicon oxide layer, in the silicon oxide layer
Surface Creation silicon oxynitride layer or silicon nitride layer, generate silicon oxynitride layer in the silicon chip surface, on the silicon oxynitride surface
The preparation method for generating silicon nitride layer includes that ald prepares method, chemical vapour deposition technique, reactive sputtering, Direct-Nitridation
Method, ionic-implantation, the chemical vapour deposition technique include plasma reinforced chemical vapour deposition method, microwave plasma enhancingization
Learn vapour deposition, radio frequency plasma and strengthen method, heated filament plasma gas phase deposition, Low Pressure Chemical Vapor Deposition, middle pressure chemistry
Vapour deposition process, radio frequency glow discharge plasma reinforced chemical vapour deposition method, inductively coupled plasma strengthen chemical vapor deposition
Area method, photo chemical vapor deposition method, thermal chemical vapor deposition method.
In one embodiment of the invention, the reacting gas of the chemical vapour deposition technique includes SiH4、N2、NH3、
N2O、O2In one or more.
In one embodiment of the invention, the flow-rate ratio of the reacting gas is SiH4:NH3=1:0.1～1:100 or
SiH4:N2=1:0.1～1:200 or SiH4:N2O=1:0.1～1:100 or SiH4:O2=1:0.1～1:100 or SiH4:N2：O2
=1:0.1:0.1～1:100:100.
In one embodiment of the invention, described annealing be in inert gas or nitrogen and hydrogen mixture atmosphere, with temperature
600～1000 DEG C of 1～600min of annealing of degree.
A kind of tunnelling silica nitrogen layer passivation contact solar cell that the present invention is provided and preparation method thereof, with following excellent
Point：
1. as the tunneling barrier of silicon nitride and silicon oxynitride is relatively low, using silica/silicon oxynitride gradient lamination, nitrogen oxygen
SiClx/silicon nitride gradient lamination, silica/silicon oxynitride/silicon nitride gradient lamination can ensure tunnel as passivation tunnel layer
Suitably relax the thickness of passivation tunnel layer on the premise of wearing efficiency, so as to passivation tunnel layer hole is advantageously reduced, reduce electric leakage
The generation of stream and recombination velocity, widen process window and improve technology stability；
2. the passivation tunnel layer that the present invention is provided is silica or silicon oxynitride with the contact interface of silicon chip, with to silicon circle
The good chemical passivation effect in face, can effectively reduce interface state density；
3., as silicon oxynitride and silicon nitride have relatively low band gap, silica/silicon oxynitride gradient lamination is used as tunnelling
The band gap of layer will be between silicon nitride band gap (about 5.3eV) and oxidation silicon band gap (about 8.9eV), so as to causing current-carrying
Son has higher tunneling efficiency, is thus advantageous to improve the tunneling efficiency of carrier, improves the efficiency of battery；
4., due to the increase of passivation tunneling layer thickness, be conducive to stopping the diffusion of impurity under high-temperature process, for example, adulterate thin
The diffusion of film silicon layer phosphorus；Also, silicon oxynitride is diffused with barrier effect to impurity, nitrogen oxidation is introduced in passivation tunnel layer gradient
Silicon, is equally beneficial for improving passivation barrier effect of the tunnel layer to impurity；
5. due in silicon oxynitride and silicon nitride defect level density higher, silica/silicon oxynitride gradient lamination, nitrogen oxygen
The positive charge carried in SiClx, silicon oxynitride/silicon nitride gradient lamination is more than pure silica, using one of which as passivation tunnel
Wear layer to be conducive to introducing the higher fixed charge of concentration, so as to improve passivation effect；
6. preparation process is simple, can prepare with existing industrialization mutually compatible, easy to utilize.
Description of the drawings
Fig. 1 is TOPCon solar battery structure schematic diagram in prior art；
Structural representation of the solar cell that Fig. 2 is provided for the present invention with n-type silicon chip as substrate embodiment.
Structural representation of the solar cell that Fig. 3 is provided for the present invention with p-type silicon chip as substrate embodiment.
Specific embodiment
For making technical solution of the present invention more preferably clear, the present invention is made further in detail below in conjunction with drawings and the specific embodiments
Thin explanation.
In order to overcome silica as the weak point of passivation tunnel layer, the present invention adopts silica/silicon oxynitride gradient
Lamination, silicon oxynitride/silicon nitride gradient lamination, silica/silicon oxynitride/silicon nitride gradient lamination is carried as passivation tunnel layer
Contact solar cell is passivated for a kind of tunnelling silica nitrogen layer.Wherein, referring to Fig. 2, it is the solar cell of present invention offer with n
Type silicon chip is the structural representation of substrate embodiment, and the solar cell includes n-type silicon chip, the n-type silicon chip as substrate,
P+ diffused emitter, passivation layer, antireflection layer and front electrode are sequentially laminated with n-type silicon chip front；The n-type silicon chip back side according to
Secondary being laminated with is passivated tunnel layer, phosphorus doping n-type thin film silicon layer and backplate.Wherein, the passivation tunnel layer is silica/nitrogen
In silica gradient lamination, silicon oxynitride/silicon nitride gradient lamination, silica/silicon oxynitride/silicon nitride gradient lamination one
Kind, the silicon oxynitride is the adulterate silica of nitrogen or the silicon nitride of doping oxygen；The silica/silicon oxynitride gradient lamination,
The nitrogen concentration of silicon oxynitride/silicon nitride gradient lamination, silica/silicon oxynitride/silicon nitride gradient lamination is from away from n-type silicon chip
One reduces laterally adjacent to the side gradient of n-type silicon chip.
Further, the thickness of the passivation tunnel layer is preferably 0.5～5nm, more preferably 1～3.0nm.
Further, in the passivation tunnel layer, the diffusion depth of nitrogen is preferably 0.1～5nm, more elect 0.5 as～
1.5nm.
Further, the silica/silicon oxynitride gradient lamination is away from the side 0.2nm depth bounds of the silicon chip
The atomic concentration of nitrogen is preferably not less than 20at.%, and the silica/silicon oxynitride gradient lamination is adjacent to the side of the silicon chip
In 0.2nm depth bounds, the atomic concentration of nitrogen is preferably no greater than 5at.%.
Further, the side 0.2nm depth bounds away from the silicon chip of the silicon oxynitride/silicon nitride gradient lamination
The atomic concentration of interior nitrogen is preferably 30～57.1at.%, and the silicon oxynitride/silicon nitride gradient lamination is adjacent to the one of the silicon chip
In the 0.2nm depth bounds of side, the atomic concentration of nitrogen is preferably 5～30at.%, and the atomic concentration of oxygen is preferably 10～40at.%.
Further, the silica/silicon oxynitride/silicon nitride gradient lamination is away from the side 0.2nm depth of the silicon chip
In the range of degree, the atomic concentration of nitrogen is preferably 30～57.1at.%, and the silica/silicon oxynitride/silicon nitride gradient lamination is adjacent
In the side 0.2nm depth bounds of closely described silicon chip, the atomic concentration of nitrogen is preferably no greater than 5at.%.
Certainly in other embodiments, or using routine techniques means replace solar cell certain Rotating fields or
Add certain Rotating fields, or using different electrode structures.
Additionally, the solar cell that the present invention is provided can also be using p-type silicon chip as substrate, referring to Fig. 3, in p-type silicon
Piece front is sequentially laminated with the first passivation tunnel layer, phosphorus doping n-type thin film silicon layer, tin indium oxide (ITO) layer and front electrode,
The p-type silicon chip back side is sequentially laminated with the second passivation tunnel layer, boron doped p type membrane silicon layer and backplate.Wherein described
One passivation tunnel layer and/or the second passivation tunnel layer are silica/silicon oxynitride gradient lamination, silicon oxynitride/silicon nitride
One kind in gradient lamination, silica/silicon oxynitride/silicon nitride gradient lamination, the silicon oxynitride are the silica of doping nitrogen
Or the silicon nitride of doping oxygen；The silica/silicon oxynitride gradient lamination, silicon oxynitride/silicon nitride gradient lamination, silica/
The nitrogen concentration of silicon oxynitride/silicon nitride gradient lamination from away from n-type silicon chip one laterally adjacent to n-type silicon chip side gradient drop
Low.
Further, the passivation tunnelling thickness layer by layer is preferably 0.5～5nm, more preferably 1～3.0nm.
Further, the diffusion depth for being passivated nitrogen in tunnel layer preferably 0.1～5nm, more preferably 0.5～
1.5nm..
Further, the silica/silicon oxynitride gradient lamination is away from the side 0.2nm depth bounds of the silicon chip
The atomic concentration of nitrogen is preferably not lower than 20at.%, and the silica/silicon oxynitride gradient lamination is adjacent to the side of the silicon chip
In 0.2nm depth bounds, the atomic concentration of nitrogen is preferably not higher than 5at.%.
Further, the side 0.2nm depth bounds away from the silicon chip of the silicon oxynitride/silicon nitride gradient lamination
The atomic concentration of interior nitrogen is preferably 30～57.1at.%, and the silicon oxynitride/silicon nitride gradient lamination is adjacent to the one of the silicon chip
In the 0.2nm depth bounds of side, the atomic concentration of nitrogen is preferably 5～30at.%, and the atomic concentration of oxygen is preferably 10～40at.%.
Further, the silica/silicon oxynitride/silicon nitride gradient lamination is away from the side 0.2nm depth of the silicon chip
In the range of degree, the atomic concentration of nitrogen is preferably 30～57.1at.%, and the silica/silicon oxynitride/silicon nitride gradient lamination is adjacent
In the side 0.2nm depth bounds of closely described silicon chip, the atomic concentration of nitrogen is preferably no greater than 5at.%.
Certainly solar cell Rotating fields are replaced in other embodiments, or using routine techniques means or adds
Plus certain Rotating fields, or using different electrode structures.
A kind of preparation method of tunnelling silica nitrogen layer passivation contact solar cell that the present invention is provided, the sun
Energy battery includes silicon chip, passivation tunnel layer, doping film silicon layer, and the passivation tunnel layer is located at the silicon chip and the doping is thin
Between film silicon layer, wherein described preparation method comprises the steps, silicon chip is pre-processed, silicon chip side after the pre-treatment
Surface or both side surface generate silicon oxide layer and then in the silicon oxide layer Surface Creation silicon oxynitride layer or silicon nitride layer, afterwards
The product for obtaining is made annealing treatment；Or nitrogen oxidation is generated in one side surface of pretreated silicon chip or both side surface
The product for obtaining, then in the silicon oxynitride Surface Creation silicon nitride layer, is made annealing treatment by silicon layer afterwards；Or institute
State one side surface of pretreated silicon chip or both side surface generates silicon oxide layer, then in the silicon oxide layer Surface Creation nitrogen oxygen
The product for obtaining, then again in the silicon oxynitride layer Surface Creation silicon nitride layer, is made annealing treatment by SiClx layer afterwards.
Shown in Figure 2, when using n-type silicon chip as solar cell substrate when, the improved tunnel oxide
The preparation method of passivation contact solar cell comprises the steps：
N-type silicon chip is pre-processed；
N-type silicon chip side after the pre-treatment generates silicon oxide layer or silicon oxynitride layer；
In the silicon oxide layer Surface Creation silicon oxynitride layer for generating, or in the silicon oxynitride layer Surface Creation silicon nitride for generating
Layer, or continue in silicon oxynitride layer Surface Creation silicon nitride layer after the silicon oxide layer Surface Creation silicon oxynitride layer for generating；
By the silicon oxide layer of the stacking for generating and silicon oxynitride layer, or silicon oxynitride layer and the silicon nitride layer of stacking, or layer
Folded silicon oxide layer, silicon oxynitride layer and silicon nitride layer, are made annealing treatment so as to which the nitrogen away from n-type silicon chip is to n-type silicon
Piece direction is spread, so as to generate silica/silicon oxynitride gradient lamination or silicon oxynitride/silicon nitride gradient lamination or silica/
Silicon oxynitride/silicon nitride gradient lamination；
Silica/silicon oxynitride gradient lamination or silicon oxynitride/silicon nitride gradient lamination or silica/silicon oxynitride/
The Surface Creation phosphorus doping n-type thin film silicon layer of silicon nitride gradient lamination；
Backplate is generated in phosphorus doping n-type thin film silicon surface；
Silicon chip opposite side after the pre-treatment generates p+ emitter stage；
Passivation layer is generated in p+ emitter surface；
Antireflection layer is generated in passivation layer surface；
Front electrode is generated in battery front side.
Its sequencing is not limited except must implemented on the basis of another step in above-mentioned steps.
Shown in Figure 3, when using p-type silicon chip as solar cell substrate when, the improved tunnel oxide
The preparation method of passivation contact solar cell comprises the steps：
P-type silicon chip is pre-processed；
P-type silicon chip both sides after the pre-treatment generate silicon oxide layer or silicon oxynitride layer；
In the silicon oxide layer Surface Creation silicon oxynitride layer for generating, or in the silicon oxynitride layer Surface Creation silicon nitride for generating
Layer, or continue in silicon oxynitride layer Surface Creation silicon nitride layer after the silicon oxide layer Surface Creation silicon nitride layer for generating；
By the silicon oxide layer of the stacking for generating and silicon oxynitride layer, or silicon oxynitride layer and the silicon nitride layer of stacking, or layer
The product of folded silicon oxide layer, silicon oxynitride layer and silicon nitride layer is made annealing treatment so as to away from p-type silicon chip nitrogen to
P-type silicon chip direction is spread, so as to generate silica/silicon oxynitride gradient lamination or silicon oxynitride/silicon nitride gradient lamination or oxygen
SiClx/silicon oxynitride/silicon nitride gradient lamination；
Silica/silicon oxynitride gradient lamination or silicon oxynitride/silicon nitride gradient lamination or silica/silicon oxynitride/
Silicon nitride gradient stack surface generates phosphorus doping n-type thin film silicon layer, or in silica/silicon oxynitride gradient lamination or nitrogen oxidation
Silicon/silicon nitride gradient lamination or silica/silicon oxynitride/silicon nitride gradient stack surface generate boron doped p type membrane silicon layer；
In boron doped p type membrane silicon layer Surface Creation backplate；
Indium tin oxide layer is generated in phosphorus doping n-type thin film silicon surface；
Front electrode is generated in battery front side.
Its sequencing is not limited except must implemented on the basis of another step in above-mentioned steps.
Further, cleaning of the pretreatment for silicon chip being carried out including but not limited to silicon chip, making herbs into wool, polishing.
Further, the method for generating silicon oxide layer can be selected from prior art, such as UV-ozone method (UV-
Ozone), red fuming nitric acid (RFNA) method, thermal oxidation method, sol-gal process, physical vaporous deposition, chemical vapour deposition technique, liquid phase deposition
Deng.
Further, the method for generating silicon oxynitride layer can be selected from prior art, such as atomic layer deposition method, chemical gas
Phase sedimentation, reactive sputtering, direct nitridation method, ionic-implantationDeng, the chemical vapour deposition technique is including but not limited to etc.
Gas ions strengthen chemical vapour deposition technique (PEVCD), radio frequency plasma and strengthen method, chemical vapour deposition technique, electron cyclotron resonace
Plasma reinforced chemical vapour deposition method, radio frequency glow discharge plasma reinforced chemical vapour deposition method, inductively coupled plasma
Strengthen chemical vapour deposition technique, Low Pressure Chemical Vapor Deposition, photo chemical vapor deposition method, thermal chemical vapor deposition method.
Further, the method for generating silicon nitride layer can be selected from prior art, such as atomic layer deposition method, chemical gaseous phase
Sedimentation, reactive sputtering, direct nitridation method, ionic-implantationDeng, the chemical vapour deposition technique including but not limited to wait from
Daughter strengthens chemical vapour deposition technique (PEVCD), radio frequency plasma and strengthens method, chemical vapour deposition technique, electron cyclotron resonace etc.
Plasma enhanced chemical vapor sedimentation, radio frequency glow discharge plasma reinforced chemical vapour deposition method, inductively coupled plasma increase
Extensive chemical vapour deposition process, Low Pressure Chemical Vapor Deposition, photo chemical vapor deposition method, thermal chemical vapor deposition method.
Further, the preferred using plasma enhancingization of method of silicon oxide layer, silicon oxynitride layer, silicon nitride layer is generated
Vapour deposition process (PEVCD) is learned, is made with one or more in Nitrogen element gas, siliceous elemental gas, oxygen-containing elemental gas
For reacting gas, react certain time under certain temperature, radio-frequency power, cavity air pressure conditions, obtain silicon oxide layer, nitrogen oxygen
SiClx layer, silicon nitride layer product.The temperature is preferably 20～500 DEG C, and the radio-frequency power is preferably 30～150W, the chamber
Body air pressure is preferably 30～120Pa, and the Nitrogen element gas is preferably SiH4、N2、NH3、N2O、O2In one or more, instead
It is SiH to answer gas flow ratio to be preferably4:NH3=1:0.1～1:100 or SiH4:N2=1:0.1～1:200 or SiH4:N2O=1:
0.1～1:100 or SiH4:O2=1:0.1～1:100 or SiH4:N2：O2=1:0.1:0.1～1:100:100；Reacting gas
Flow is preferably SiH4:5～30sccm, NH3:10～50sccm, N2:10～50sccm.
Further, annealing is preferably in inert gas argon gas or nitrogen or nitrogen and hydrogen mixture atmosphere, with temperature 600
～1000 DEG C are annealed into 1～600min.
Further, silica/silicon oxynitride gradient lamination or silicon oxynitride/silicon nitride gradient lamination or silica/
Silicon oxynitride/silicon nitride gradient stack surface generates phosphorus doping n-type thin film silicon layer or the method for generating boron doped p type membrane silicon layer
Prior art, such as molecular beam epitaxy, pulsed laser deposition, magnetron sputtering method, spray pyrolysis, chemical gas can be selected from
Phase sedimentation, sol-gel process.
Further, backplate is generated, is generated p+ emitter stage, generates passivation layer, antireflection layer, the side of indium tin oxide layer
Method is all selected from prior art.
The preparation method of the solar cell that the present invention is provided, in addition to the preparation of passivation tunnel layer, can all adopt existing skill
Prepared by art means, its specific technological means does not have materially affect to the present invention.
The present invention is further described with reference to specific embodiment.
Embodiment 1
The present embodiment is pre-processed to n-type silicon chip first with n-type silicon chip as substrate, using TMAH
(TMAH), hydrogen fluoride (HF) and RCA cleaning fluid are carried out making herbs into wool to the n-type silicon chip as substrate, to remove mechanical damage
Layer, greasy dirt and metal impurities, while form up-and-down matte on surface；On n-type silicon chip side after the pre-treatment, lead to
The red fuming nitric acid (RFNA) for crossing 68% grows silica (SiO of a layer thickness for 1.5nmx) layer；Then the n-type silicon chip of silicon oxide layer will be generated
It is placed in plasma enhanced chemical vapor deposition (PECVD) equipment, in reacting gas SiH4Flow is 1sccm, NH3Flow
For 10sccm, cavity air pressure is 10Pa, and temperature is 100 DEG C, and radio-frequency power is reaction 0.5min under the conditions of 50W；Afterwards in nitrogen hydrogen
Anneal in mixing (Forming Gas) atmosphere under the conditions of 800 DEG C 60min, eliminates defect, generates silica/silicon oxynitride ladder
Degree lamination；Thickness is generated by plasma enhanced chemical vapor deposition method in silica/silicon oxynitride gradient stack surface is
20nm, phosphorus doping density are 1e19cm-3Phosphorus doping n-type thin film silicon layer；By the method for magnetic control degree of splashing in phosphorus doping n-type thin film
Silicon surface generates Ag metallic back plate of a layer thickness for 1000nm；Silicon chip opposite side after the pre-treatment will be by aoxidizing
Boron (BxOy) solid source diffusion formed a layer thickness for 500nm generate p+ emitter layer；Launched in p+ by atomic deposition method
Pole opposite side Surface Creation a layer thickness is 3nm aluminum oxide (Al2O3) passivation layer；Using plasma enhanced chemical vapor deposition
Method is in aluminum oxide (Al2O3) passivation layer opposite side Surface Creation a layer thickness be 50nm silicon nitride (SiNx) antireflection layer；Using silk
Net printing technology generates front electrode in battery front side；Prepared solar cell A1.
Using solar cell C-V characteristic test system (model：SoliA, U.S. NewportOrie are provided) determine too
The surface saturation current density of sun energy battery A1, open-circuit voltage, short circuit current, fill factor, curve factor, conversion efficiency；Using ellipsometer
(model：M-1500DI, J.A.Woollam company of the U.S. provide) determine solar cell A1 passivation tunneling layer thickness；Using X
Ray fluorescence spectrometry (model：AXIS UTLTRA DLD, Japanese Shimadzu Corporation are provided) and ion microprobe (model：
IMS 1280, Evans company provide) determine solar cell A1 passivation tunnelling layer component.The results are shown in Table 1.
Embodiment 2
Solar cell is prepared in 1 identical method of embodiment, difference is that in n-type silicon chip one side growth thickness is
Silica (the SiO of 1.2nmx) layer；Then the n-type silicon chip for generating silicon oxide layer is placed on PECVD to sink
In product (PECVD) equipment, in reacting gas SiH4Flow is 1sccm, NH3Flow is 10sccm, and cavity air pressure is 10Pa, temperature
For 100 DEG C, radio-frequency power is reaction 0.5min under the conditions of 50W；Afterwards 850 in nitrogen hydrogen mixing (Forming Gas) atmosphere
Anneal under the conditions of DEG C 30min, and solar cell A2 is obtained.
The surface saturation current density of measure solar cell A2, open-circuit voltage, short circuit in the same manner as in Example 1
Electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell A2, component the results are shown in Table 1.
Embodiment 3
Solar cell is prepared in 1 identical method of embodiment, difference is that in n-type silicon chip one side growth thickness is
Silica (the SiO of 1nmx) layer；Then the n-type silicon chip for generating silicon oxide layer is placed on plasma enhanced chemical vapor deposition
(PECVD) in equipment, in reacting gas SiH4Flow is 1sccm, NH3Flow is 10sccm, and cavity air pressure is 10Pa, and temperature is
100 DEG C, radio-frequency power is reaction 1.5min under the conditions of 50W；Afterwards at 850 DEG C in nitrogen hydrogen mixing (Forming Gas) atmosphere
Under the conditions of anneal 1.5min, be obtained solar cell A3.
The surface saturation current density of measure solar cell A3, open-circuit voltage, short circuit in the same manner as in Example 1
Electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell A3, component the results are shown in Table 1.
Embodiment 4
Solar cell is prepared in 1 identical method of embodiment, difference is that in n-type silicon chip one side growth thickness is
Silica (the SiO of 0.5nmx) layer；Then the n-type silicon chip for generating silicon oxide layer is placed on PECVD to sink
In product (PECVD) equipment, in reacting gas SiH4Flow is 5sccm, NH3Flow is 20sccm, and cavity air pressure is 15Pa, temperature
For 200 DEG C, radio-frequency power is reaction 2.5min under the conditions of 30W；Afterwards 600 in nitrogen hydrogen mixing (Forming Gas) atmosphere
Anneal under the conditions of DEG C 480min, and solar cell A4 is obtained.
The surface saturation current density of measure solar cell A4, open-circuit voltage, short circuit in the same manner as in Example 1
Electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell A4, component the results are shown in Table 1.
Embodiment 5
Solar cell is prepared in 1 identical method of embodiment, difference is that in n-type silicon chip one side growth thickness is
Silica (the SiO of 1nmx) layer；Then the n-type silicon chip for generating silicon oxide layer is placed on plasma enhanced chemical vapor deposition
(PECVD) in equipment, in reacting gas SiH4Flow is 10sccm, NH3Flow is 50sccm, and cavity air pressure is 10Pa, and temperature is
400 DEG C, radio-frequency power is reaction 3min under the conditions of 40W；Afterwards in 1000 DEG C of bars in nitrogen hydrogen mixing (Forming Gas) atmosphere
Anneal under part 3min, and solar cell A5 is obtained.
The surface saturation current density of measure solar cell A5, open-circuit voltage, short circuit in the same manner as in Example 1
Electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell A5, component the results are shown in Table 1.
Embodiment 6
Solar cell is prepared in 1 identical method of embodiment, difference is that in n-type silicon chip one side growth thickness is
Silica (the SiO of 1nmx) layer；Then the n-type silicon chip for generating silicon oxide layer is positioned over plasma enhanced chemical vapor deposition
(PECVD) in equipment, in reacting gas SiH4Flow is 10sccm, N2O flow is 50sccm, and cavity air pressure is 10Pa, and temperature is
250 DEG C, radio-frequency power is reaction 3min under the conditions of 100W, in silicon oxide layer superficial growth silicon oxynitride (SiON) layer；Exist afterwards
Reacting gas SiH4Flow is 10sccm, N2Flow is 15sccm, and cavity air pressure is 10Pa, and temperature is 250 DEG C, and radio-frequency power is
3min is reacted under the conditions of 100W, in silicon oxynitride (SiON) superficial growth silicon nitride (SNx), mix (Forming in nitrogen hydrogen afterwards
Gas) anneal in atmosphere under the conditions of 800 DEG C 90min, and solar cell A6 is obtained.
The surface saturation current density of measure solar cell A6, open-circuit voltage, short circuit in the same manner as in Example 1
Electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell A6, component the results are shown in Table 1.
Embodiment 7
Solar cell is prepared in 1 identical method of embodiment, difference is to strengthen chemical vapor deposition in gas ions
(PECVD) in equipment, in reacting gas SiH4Flow is 10sccm, N2O flow is 50sccm, and cavity air pressure is 10Pa, and temperature is
250 DEG C, radio-frequency power is reaction 3min under the conditions of 100W, and in n-type silicon chip one side, growth thickness is the silicon oxynitride of 2.5nm
(SiON) layer；Then in reacting gas SiH4Flow is 10sccm, NH3Flow is 50sccm, and cavity air pressure is 10Pa, and temperature is
400 DEG C, radio-frequency power is reaction 1min under the conditions of 40W, in silicon oxynitride layer superficial growth silicon nitride (SNx) layer；Afterwards in nitrogen
Anneal in hydrogen mixing (Forming Gas) atmosphere under the conditions of 900 DEG C 30min, and solar cell A7 is obtained.
The surface saturation current density of measure solar cell A7, open-circuit voltage, short circuit in the same manner as in Example 1
Electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell A7, component the results are shown in Table 1.
Comparative example 1
The present embodiment is pre-processed to n-type silicon chip first with n-type silicon chip as substrate, is cleaned using TMAH, HF and RCA
Liquid is carried out making herbs into wool to n-type silicon chip substrate, to remove mechanical damage layer, greasy dirt and metal impurities, while in surface shape
Become up-and-down matte；On n-type silicon chip side after the pre-treatment, growing a layer thickness by 68% red fuming nitric acid (RFNA) is
Silica (the SiO of 1.3nmx) layer；By plasma enhanced chemical vapor deposition method in silicon oxide layer Surface Creation thickness it is
20nm, phosphorus doping density are 1e19cm-3Phosphorus doping n-type thin film silicon layer；By the method for magnetic control degree of splashing in phosphorus doping n-type thin film
Silicon surface generates Ag metal electrode of a layer thickness for 1000nm；Silicon chip opposite side after the pre-treatment passes through BBr3Gas
Source diffuses to form a layer thickness and generates p+ emitter layer for 500nm；Generated in p+ emitter surface by atomic deposition method
A layer thickness is 3nm aluminum oxide (Al2O3) passivation layer；Using plasma enhanced chemical vapor deposition method in aluminum oxide (Al2O3)
Passivation layer surface generates a layer thickness for 60nm silicon nitride (SiNx) antireflection layer；Given birth in battery front side using screen printing technique
Become front electrode；Prepared solar cell D1.
The surface saturation current density of measure solar cell D1, open-circuit voltage, short circuit in the same manner as in Example 1
Electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell D1, the results are shown in Table 1.
The measurement result of solar cell prepared by 1 embodiment 1～7 of table, comparative example 1
As it can be seen from table 1 when the thickness of tunnelling passivation layer is in more than 2nm, remaining to obtain and prior art performance phase
When or more excellent solar cell.
Embodiment 8
The present embodiment is pre-processed to p-type silicon chip first with p-type silicon chip as substrate, is cleaned using TMAH, HF and RCA
Liquid is carried out making herbs into wool to p-type silicon chip substrate, to remove mechanical damage layer, greasy dirt and metal impurities, while in surface shape
Become up-and-down matte；On p-type silicon chip both sides after the pre-treatment, the red fuming nitric acid (RFNA) by 68% respectively grows a layer thickness and is
Silica (the SiO of 1.4nmx) layer；Then the p-type silicon chip for generating silicon oxide layer is placed on PECVD to sink
In product (PECVD) equipment, in reacting gas SiH4Flow is 1sccm, NH3Flow is 10sccm, and cavity air pressure is 30Pa, temperature
For 100 DEG C, radio-frequency power is reaction 0.5min under the conditions of 50W；Afterwards 800 in nitrogen hydrogen mixing (Forming Gas) atmosphere
Anneal under the conditions of DEG C 60min, eliminates defect, generates the silica/silicon oxynitride gradient lamination with gradient concentration silicon oxynitride；
Thickness is generated by plasma enhanced chemical vapor deposition method in one layer of silica/silicon oxynitride gradient stack surface is
20nm, phosphorus doping density are 1e19cm-3Phosphorus doping n-type thin film silicon layer, existed by plasma enhanced chemical vapor deposition method
It is 1e that another layer of silica/silicon oxynitride gradient stack surface generates thickness for 20nm, boron doping concentration15cm-3Boron doping p
Type membrane silicon layer；By the method for magnetic control degree of splashing in the Ag that boron doped p type membrane silicon layer Surface Creation a layer thickness is 1000nm
Metal electrode；Indium oxide of a layer thickness for 200nm is generated in phosphorus doping n-type thin film silicon surface by the method for magnetic control degree of splashing
Tin layers；Front electrode is generated in battery front side using screen printing technique；Prepared solar cell A8.
The surface saturation current density of measure solar cell A8, open-circuit voltage, short circuit in the same manner as in Example 1
Electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell A8, component the results are shown in Table 2.
Embodiment 9
Solar cell is prepared in 8 identical method of embodiment, difference is on p-type silicon chip both sides after the pre-treatment,
Red fuming nitric acid (RFNA) by 68% respectively grows silica (SiO of a layer thickness for 0.5nmx) layer；Then the p-type of silicon oxide layer will be generated
Silicon chip is placed in plasma enhanced chemical vapor deposition (PECVD) equipment, in reacting gas SiH4Flow is 15sccm, NH3
Flow is 50sccm, and cavity air pressure is 100Pa, and temperature is 200 DEG C, and radio-frequency power is reaction 2min under the conditions of 30W；Afterwards in argon
Anneal in gas atmosphere under the conditions of 600 DEG C 600min, eliminates defect, generates the silica/nitrogen with gradient concentration silicon oxynitride
Silica gradient lamination, is obtained solar cell A9.
The surface saturation current density of measure solar cell A9, open-circuit voltage, short circuit in the same manner as in Example 1
Electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell A9, component the results are shown in Table 2.
Embodiment 10
Solar cell is prepared in 8 identical method of embodiment, difference is on p-type silicon chip both sides after the pre-treatment,
Red fuming nitric acid (RFNA) by 68% respectively grows silica (SiO of a layer thickness for 3.5nmx) layer；Then the p-type of silicon oxide layer will be generated
Silicon chip is placed in plasma enhanced chemical vapor deposition (PECVD) equipment, in reacting gas SiH4Flow is 30sccm, NH3
Flow is 40sccm, and cavity air pressure is 30Pa, and temperature is 400 DEG C, and radio-frequency power is reaction 0.5min under the conditions of 150W；Exist afterwards
Anneal in nitrogen atmosphere under the conditions of 1000 DEG C 20min, elimination defect, and silica of the generation with gradient concentration silicon oxynitride/
Silicon oxynitride gradient lamination, is obtained solar cell A10.
The surface saturation current density of solar cell A10, open-circuit voltage, short is determined in the same manner as in Example 1
Road electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell A10, component the results are shown in Table 2.
Embodiment 11
Solar cell is prepared in 8 identical method of embodiment, difference is on p-type silicon chip both sides after the pre-treatment,
Red fuming nitric acid (RFNA) by 68% respectively grows silica (SiO of a layer thickness for 3nmx) layer；Then the p-type silicon of silicon oxide layer will be generated
Piece is placed in plasma enhanced chemical vapor deposition (PECVD) equipment, in reacting gas SiH4Flow is 25sccm, N2Stream
Measure as 25sccm, cavity air pressure is 120Pa, temperature is 50 DEG C, radio-frequency power is to react 2min under the conditions of 120W；Afterwards in nitrogen hydrogen
Anneal in mixing (Forming Gas) atmosphere under the conditions of 800 DEG C 200min, eliminates defect, generates with gradient concentration nitrogen oxygen
The silica of SiClx/silicon oxynitride gradient lamination, is obtained solar cell A11.
The surface saturation current density of solar cell A11, open-circuit voltage, short is determined in the same manner as in Example 1
Road electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell A11, component the results are shown in Table 2.
Embodiment 12
Solar cell is prepared in 8 identical method of embodiment, difference is on p-type silicon chip both sides after the pre-treatment,
Red fuming nitric acid (RFNA) by 68% respectively grows silica (SiO of a layer thickness for 2nmx) layer；Then the p-type silicon of silicon oxide layer will be generated
Piece is placed in plasma enhanced chemical vapor deposition (PECVD) equipment, in reacting gas SiH4Flow is 10sccm, N2Stream
Measure as 10sccm, cavity air pressure is that 60Pa, temperature are 500 DEG C, radio-frequency power is to react 3min under the conditions of 80W；Afterwards in nitrogen hydrogen
Anneal in mixing (Forming Gas) atmosphere under the conditions of 900 DEG C 20min, eliminates defect, generates with gradient concentration nitrogen oxidation
The silica of silicon/silicon oxynitride gradient lamination, is obtained solar cell A12.
The surface saturation current density of solar cell A12, open-circuit voltage, short is determined in the same manner as in Example 1
Road electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell A12, component the results are shown in Table 2.
Embodiment 13
Solar cell is prepared in 8 identical method of embodiment, difference is that growth thickness is in p-type silicon chip both sides
Silica (the SiO of 1nmx) layer, then the p-type silicon chip for generating silicon oxide layer is positioned over plasma enhanced chemical vapor deposition
(PECVD) in equipment, in reacting gas SiH4Flow is 10sccm, N2O flow is 150sccm, and cavity air pressure is 10Pa, temperature
For 250 DEG C, radio-frequency power is reaction 3min under the conditions of 100W, in the silicon oxynitride that silicon oxide layer superficial growth thickness is 3nm
(SiON) layer；Afterwards in reacting gas SiH4Flow is 10sccm, N2Flow is 15sccm, and cavity air pressure is 10Pa, and temperature is
250 DEG C, radio-frequency power is reaction 3min under the conditions of 100W, in silicon oxynitride (SiON) superficial growth silicon nitride (SNx), Zhi Hou
Anneal in nitrogen hydrogen mixing (Forming Gas) atmosphere under the conditions of 900 DEG C 20min, and solar cell A13 is obtained.
The surface saturation current density of solar cell A13, open-circuit voltage, short is determined in the same manner as in Example 1
Road electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell A13, component the results are shown in Table 2.
Embodiment 14
Solar cell is prepared in 8 identical method of embodiment, difference is to strengthen chemical vapor deposition in gas ions
(PECVD) in equipment, in reacting gas SiH4Flow is 10sccm, N2O flow is 150sccm, and cavity air pressure is 10Pa, temperature
For 250 DEG C, radio-frequency power is reaction 2min under the conditions of 100W, and on the both sides of p-type silicon chip, growth thickness is the silicon oxynitride of 2nm
(SiON) layer；Then in reacting gas SiH4Flow is 10sccm, N2Flow is 10sccm, and cavity air pressure is, 60Pa, and temperature is
500 DEG C, radio-frequency power is reaction 1min under the conditions of 80W, in silicon oxynitride layer superficial growth silicon nitride (SNx) layer；Afterwards in nitrogen
Anneal in hydrogen mixing (Forming Gas) atmosphere under the conditions of 900 DEG C 30min.
The surface saturation current density of solar cell A14, open-circuit voltage, short is determined in the same manner as in Example 1
Road electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell A14, component the results are shown in Table 2.
Comparative example 2
The present embodiment is pre-processed to p-type silicon chip first with p-type silicon chip as substrate, using HF and HCl to p-type silicon chip
Substrate is carried out making herbs into wool, to remove mechanical damage layer, greasy dirt and metal impurities, while being formed on surface up-and-down
Matte；On p-type silicon chip both sides after the pre-treatment, the red fuming nitric acid (RFNA) by 68% respectively grows silica of a layer thickness for 2nm
(SiOx) layer；It is that 20nm, phosphorus are mixed by plasma enhanced chemical vapor deposition method in one layer of silicon oxide layer Surface Creation thickness
Miscellaneous concentration is 1e19Phosphorus doping n-type thin film silicon layer, by plasma enhanced chemical vapor deposition method in another layer of silicon oxide layer
Surface Creation thickness is 20nm, boron doping concentration is 1e15Boron doped p type membrane silicon layer；Method by magnetic control degree of splashing is in boron
Doped p type membrane silicon layer Surface Creation a layer thickness is the Ag metal electrode of 1000nm；Mixed in phosphorus by the method for magnetic control degree of splashing
Miscellaneous n-type thin film silicon surface generates indium tin oxide layer of a layer thickness for 200nm；Given birth in battery front side using screen printing technique
Become front electrode；Prepared solar cell D2.
The surface saturation current density of solar cell A14, open-circuit voltage, short is determined in the same manner as in Example 1
Road electric current, fill factor, curve factor, conversion efficiency, the passivation tunneling layer thickness of solar cell A14, the results are shown in Table 2.
The surface saturation current density of measure solar cell D2, open-circuit voltage, short circuit in the same manner as in Example 1
Electric current, fill factor, curve factor, conversion efficiency, the results are shown in Table 2.
The measurement result of solar cell prepared by 2 embodiment 6-10 of table, comparative example 2
From table 2 it can be seen that when the thickness of tunnelling passivation layer is in more than 2nm, remaining to obtain and prior art performance phase
When or more excellent solar cell.
Embodiment described above only have expressed the several embodiments of the present invention, and its description is more concrete and detailed, but simultaneously
The restriction that therefore can not be interpreted as to the scope of the claims of the present invention.It should be pointed out that for one of ordinary skill in the art
For, without departing from the inventive concept of the premise, some deformation and improvement can also be made, these belong to the guarantor of the present invention
Shield scope.Therefore, the protection domain of patent of the present invention should be defined by claims.
Claims (10)
1. a kind of tunnelling silica nitrogen layer is passivated contact solar cell, and wherein, the solar cell includes silicon chip, passivation tunnelling
Layer, doping film silicon layer, the passivation tunnel layer is Wei Yu the silicon chip and the doping film silicon layer between, it is characterised in that
The passivation tunnel layer is silica/silicon oxynitride gradient lamination, silicon oxynitride/silicon nitride gradient lamination, silica/nitrogen oxidation
One kind in silicon/silicon nitride gradient lamination；The silicon oxynitride is the adulterate silica of nitrogen or the silicon nitride of doping oxygen；The oxygen
SiClx/silicon oxynitride gradient lamination, silicon oxynitride/silicon nitride gradient lamination, silica/silicon oxynitride/silicon nitride gradient lamination
Nitrogen concentration reduce from the side gradient of the lateral adjacent silicon wafer away from silicon chip.
2. solar cell according to claim 1, it is characterised in that the thickness of the passivation tunnel layer is 0.5～5nm.
3. solar cell according to claim 1, it is characterised in that the diffusion depth of nitrogen is in the passivation tunnel layer
0.1～5nm.
4. the solar cell according to any one of claims 1 to 3, it is characterised in that the silica/silicon oxynitride ladder
Degree lamination is not less than 20at.% away from the atomic concentration of nitrogen in the side 0.2nm depth bounds of the silicon chip, and the silica/
Silicon oxynitride gradient lamination is not higher than 5at.% adjacent to the atomic concentration of nitrogen in the side 0.2nm depth bounds of the silicon chip.
5. the solar cell according to any one of claims 1 to 3, it is characterised in that the silicon oxynitride/silicon nitride ladder
In the side 0.2nm depth bounds away from the silicon chip of degree lamination, the atomic concentration of nitrogen is 30～57.1at.%, the nitrogen oxygen
SiClx/silicon nitride gradient lamination is 5～30at.% adjacent to the atomic concentration of nitrogen in the side 0.2nm depth bounds of the silicon chip,
The atomic concentration of oxygen is 10～40at.%.
6. the solar cell according to any one of claims 1 to 3, it is characterised in that the silica/silicon oxynitride/nitrogen
SiClx gradient lamination is 30～57.1at.% away from the atomic concentration of nitrogen in the side 0.2nm depth bounds of the silicon chip, described
Silica/silicon oxynitride/silicon nitride gradient lamination adjacent to nitrogen in the side 0.2nm depth bounds of the silicon chip atomic concentration not
Higher than 5at.%.
7. a kind of tunnelling silica nitrogen layer is passivated contact solar cell preparation method, and the solar cell includes silicon chip, passivation
Tunnel layer, doping film silicon layer, Wei Yu the silicon chip and the doping film silicon layer between, its feature exists the passivation tunnel layer
In the preparation method of the passivation tunnel layer is comprised the following steps：Silicon oxide layer is generated in the silicon chip surface, then described
The product for obtaining is made annealing treatment by silicon oxide layer Surface Creation silicon oxynitride layer or silicon nitride layer afterwards；Or described
Silicon chip surface generates silicon oxynitride layer, then in the silicon oxynitride Surface Creation silicon nitride layer, enters the product for obtaining afterwards
Row annealing；Or silicon oxide layer is generated in the silicon chip surface, then in the silicon oxide layer Surface Creation silicon oxynitride
The product for obtaining, then again in the silicon oxynitride layer Surface Creation silicon nitride layer, is made annealing treatment by layer afterwards.
8. preparation method according to claim 7, it is characterised in that described the silicon chip surface generate silicon oxide layer,
The silicon oxide layer Surface Creation silicon oxynitride layer or silicon nitride layer, generate silicon oxynitride layer in the silicon chip surface, described
The preparation method of silicon oxynitride Surface Creation silicon nitride layer includes that ald preparation method, chemical vapour deposition technique, reaction are splashed
Method, direct nitridation method, ionic-implantation is penetrated, the chemical vapour deposition technique includes plasma reinforced chemical vapour deposition method, micro-
Ripple plasma reinforced chemical vapour deposition, radio frequency plasma strengthen method, heated filament plasma gas phase deposition, low pressure chemical phase and sink
Area method, middle pressure chemical vapor deposition method, radio frequency glow discharge plasma reinforced chemical vapour deposition method, inductively coupled plasma increase
Extensive chemical vapour deposition process, photo chemical vapor deposition method, thermal chemical vapor deposition method.
9. preparation method according to claim 8, it is characterised in that the reacting gas of the chemical vapour deposition technique includes
SiH4、N2、NH3、N2O、O2In one or more.
10. preparation method according to claim 9, it is characterised in that the flow-rate ratio of the reacting gas is SiH4:NH3=
1:0.1～1:100 or SiH4:N2=1:0.1～1:200 or SiH4:N2O=1:0.1～1:100 or SiH4:O2=1:0.1～1:
100 or SiH4:N2：O2=1:0.1:0.1～1:100:100.
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| CN108074989A (en) * | 2016-11-14 | 2018-05-25 | Lg电子株式会社 | Solar cell and its manufacturing method |
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