CN105390555A - Full-back-electrode solar cell structure and preparation method therefor - Google Patents
Full-back-electrode solar cell structure and preparation method therefor Download PDFInfo
- Publication number
- CN105390555A CN105390555A CN201510994224.3A CN201510994224A CN105390555A CN 105390555 A CN105390555 A CN 105390555A CN 201510994224 A CN201510994224 A CN 201510994224A CN 105390555 A CN105390555 A CN 105390555A
- Authority
- CN
- China
- Prior art keywords
- layer
- polysilicon layer
- passivation
- cell substrate
- back side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 29
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 126
- 238000002161 passivation Methods 0.000 claims abstract description 91
- 239000000758 substrate Substances 0.000 claims abstract description 59
- 229920005591 polysilicon Polymers 0.000 claims description 121
- 238000000034 method Methods 0.000 claims description 19
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims description 12
- 239000011574 phosphorus Substances 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 238000005498 polishing Methods 0.000 claims description 9
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000005001 laminate film Substances 0.000 claims description 6
- 239000005297 pyrex Substances 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 239000004568 cement Substances 0.000 claims description 3
- 230000005669 field effect Effects 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- -1 phosphonium ion Chemical class 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 10
- 229910052710 silicon Inorganic materials 0.000 abstract description 10
- 239000010703 silicon Substances 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 5
- 230000005641 tunneling Effects 0.000 abstract 3
- 239000000969 carrier Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 172
- 150000001875 compounds Chemical class 0.000 description 9
- 239000011241 protective layer Substances 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 241000710779 Trina Species 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000010079 rubber tapping Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a full-back-electrode solar cell structure and a preparation method therefor. The full-back-electrode solar cell structure comprises a cell substrate, a tunneling passivation layer, and a polycrystalline silicon layer, wherein the tunneling passivation layer is arranged on the back surface of the cell substrate; the polycrystalline silicon layer is arranged on the lower surface of the tunneling passivation layer; and the polycrystalline silicon layer is provided with an N type heavily-doped polycrystalline silicon layer and a P type polycrystalline silicon layer that are arranged side by side. According to the full-back-electrode solar cell structure, the silicon body is good in the surface passivation effect, and carriers can be selectively output, so that the efficiency of the full-back-electrode solar cell is improved.
Description
Technical field
The present invention relates to a kind of full backplane solar battery structure and preparation method thereof.
Background technology
At present, photovoltaic is becoming the dominant form of Future New Energy Source.Constantly perfect along with industrial chain, the maximum challenge of current photovoltaic industry how improving solar cell conversion efficiency while, to reduce manufacturing cost.As the one of efficient solar battery, full backplane solar cell front is without gate-shaped electrode, and positive and negative electrode, all at cell backside, effectively reduces front shading loss, improves the efficiency of solar cell.At present, Trina Solar and Australian National University have joined that to develop light-receiving area be 4cm
2, efficiency is the world record of the full backplane solar cell of 24.4%.But full backplane solar cell complex process, still has stretch from industrialization process.How improve the conversion efficiency of full backplane solar cell further, and reduce manufacturing cost and become a difficult problem.
The most important thing of solar cell Design and optimization how to reduce compound, comprises silicon face compound, the compound of Metal contact regions and the compound of silicon body itself.Along with the application of the high-quality passivation films such as aluminium oxide, silicon nitride, silica, full backplane solar cell silicon face recombination rate can be reduced to lower state.The compound of silicon body itself can make up by selecting the measured silicon chip of matter.Therefore promote battery efficiency further just to have dropped on and how to reduce in the compound of silicon body and Metal contact regions.Although the area that partially perforation reduces Metal contact regions becomes a kind of means, do not eradicate the high compound of tapping, and make technique more complicated, also easily cause going here and there the rising hindered.
Summary of the invention
Technical problem to be solved by this invention is the defect overcoming prior art, a kind of full backplane solar battery structure is provided, it can not only make silicon body have good surface passivation effect, and carries out selectivity transmission to charge carrier, improves the efficiency of full backplane solar cell.
In order to solve above technical problem, technical scheme of the present invention is: a kind of full backplane solar battery structure, and it comprises:
Cell substrate;
Tunnelling passivation layer, described tunnelling passivation layer is arranged on the back side of cell substrate;
Polysilicon layer, described polysilicon layer is arranged on the lower surface of tunnelling passivation layer, and described polysilicon layer has the N-type heavily doped polysilicon layer and P type polysilicon layer that are set up in parallel.
The further technical problem to be solved of the present invention is: the while of ensureing high short circuit current, reduce the recombination losses of Metal contact regions, increase open circuit voltage, keep high fill factor, curve factor, the efficiency of the full backplane solar cell of final lifting, full backplane solar battery structure also comprises electrode layer, electrode layer is arranged on the lower surface of polysilicon layer, and described electrode layer has the negative electrode contacted with N-type heavily doped polysilicon layer and the positive electrode contacted with P type polysilicon layer, and be provided with local passivation protection layer between adjacent negative electrode and positive electrode, described local passivation protection layer is arranged between the Metal Contact position of N-type heavily doped polysilicon layer and P type polysilicon layer lower floor.
Further, full backplane solar battery structure also comprises Facad structure, and described Facad structure comprises the front-surface field, front passivation layer and the antireflection layer that are successively set on cell substrate front from the inside to the outside.
Further, described antireflection layer is SiN
xfilm or SiO
2film or SiN
x/ SiO
2laminate film; And/or described front passivation layer is Al
2o
3film or Al
2o
3/ SiN
xlaminate film; And/or described front-surface field is for having front field effect active layer.
Further, described local passivation protection layer is insulating cement film or SiN
xfilm or SiO
2film.
Further, described tunnelling passivation layer is SiO
2film or MoO
xfilm or Al
2o
3film.
Further, the thickness of described tunnelling passivation layer is less than 2nm.
Present invention also offers a kind of preparation method of full backplane solar battery structure, the step that the method is prepared at the cell substrate back side is as follows:
A () is by the back side single-sided polishing of cell substrate;
B () prepares tunnelling passivation layer at the back side of cell substrate;
C () prepares polysilicon layer at the lower surface of tunnelling passivation layer;
D polysilicon layer is carried out boron DIFFUSION TREATMENT by (), then local phosphorus diffusion process, forms the N-type heavily doped polysilicon layer and P type polysilicon layer that are set up in parallel;
E back side is formed in () removal step (d) Pyrex and phosphorosilicate glass and the front protecting layer formed in the preparation process of cell substrate front;
(f) Passivation Treatment;
G () prepares electrode layer at the lower surface of polysilicon layer, the negative electrode described electrode layer being had contact with N-type heavily doped polysilicon layer and the positive electrode contacted with P type polysilicon layer;
H () prepares local passivation protection layer between adjacent negative electrode and positive electrode, guarantee that described local passivation protection layer is arranged between the Metal Contact position of N-type heavily doped polysilicon layer and P type polysilicon layer lower floor.
Present invention also offers a kind of preparation method of full backplane solar battery structure, the step that the method is prepared at the cell substrate back side is as follows:
A () is by the back side single-sided polishing of cell substrate;
B () prepares tunnelling passivation layer at the back side of cell substrate;
C () prepares polysilicon layer at the lower surface of tunnelling passivation layer;
D () be local boron ion implantation in polysilicon layer, then local phosphonium ion injects, and forms the N-type heavily doped polysilicon layer and P type polysilicon layer that are set up in parallel;
(e) annealing in process, and the front protecting layer that formed in the backside oxide layer that in removal step (d), the back side is formed and cell substrate front preparation process;
(f) Passivation Treatment;
G () prepares electrode layer at the lower surface of polysilicon layer, the negative electrode described electrode layer being had contact with N-type heavily doped polysilicon layer and the positive electrode contacted with P type polysilicon layer;
H () prepares local passivation protection layer between adjacent negative electrode and positive electrode, guarantee that described local passivation protection layer is arranged between the Metal Contact position of N-type heavily doped polysilicon layer and P type polysilicon layer lower floor.
Present invention also offers a kind of preparation method of full backplane solar battery structure, the step that the method is being prepared at the cell substrate back side is as follows:
A () is by the back side single-sided polishing of cell substrate;
B () prepares tunnelling passivation layer at the back side of cell substrate;
C () prepares amorphous silicon layer at the lower surface of tunnelling passivation layer, and the high temperature anneal, form polysilicon layer;
D polysilicon layer is carried out local boron DIFFUSION TREATMENT by (), then local phosphorus diffusion process, forms the N-type heavily doped polysilicon layer and P type polysilicon layer that are set up in parallel;
The front protecting layer formed in e back side is formed in () removal step (d) Pyrex and phosphorosilicate glass and cell substrate front preparation process;
(f) Passivation Treatment;
G () prepares electrode layer at the lower surface of polysilicon layer, the negative electrode described electrode layer being had contact with N-type heavily doped polysilicon layer and the positive electrode contacted with P type polysilicon layer;
H () prepares local passivation protection layer between adjacent negative electrode and positive electrode, guarantee that described local passivation protection layer is arranged between the Metal Contact position of N-type heavily doped polysilicon layer and P type polysilicon layer lower floor.
After have employed technique scheme, the present invention has following beneficial effect:
(1) without the need to diffuseing to form PN junction, adopt ultra-thin tunnelling passivation layer and polysilicon layer, comprise N-type heavily doped polysilicon layer and the P type polysilicon layer of broad-band gap in polysilicon layer, this structure can make silicon body have good surface passivation effect, forms the selectivity transport layer of charge carrier.
(2) polysilicon layer and electrode directly form large-area contact, avoid the compound of traditional solar cell in Metal contact regions, while maintenance fill factor, curve factor, decrease the loss of open circuit voltage.
(3) the full backplane solar battery structure that the present invention relates to is simple, and processing step reduces in a large number relative to traditional full backplane solar cell, is applicable to industrialization and produces.
Accompanying drawing explanation
Fig. 1 is the structural representation of full backplane solar battery structure of the present invention.
Embodiment
In order to make content of the present invention more easily be clearly understood, below according to specific embodiment also by reference to the accompanying drawings, the present invention is further detailed explanation.
As shown in Figure 1, a kind of full backplane solar battery structure, it comprises:
Cell substrate 1;
Tunnelling passivation layer 2, described tunnelling passivation layer 2 is arranged on the back side of cell substrate 1;
Polysilicon layer, described polysilicon layer is arranged on the lower surface of tunnelling passivation layer 2, and described polysilicon layer has the N-type heavily doped polysilicon layer 31 and P type polysilicon layer 32 that are set up in parallel.
Full backplane solar battery structure also comprises electrode layer; electrode layer is arranged on the lower surface of polysilicon layer; and described electrode layer has the negative electrode 41 contacted with N-type heavily doped polysilicon layer 31 and the positive electrode 42 contacted with P type polysilicon layer 32; and be provided with local passivation protection layer 5 between adjacent negative electrode 41 and positive electrode 42, described local passivation protection layer 5 is arranged between the Metal Contact position of N-type heavily doped polysilicon layer 31 and P type polysilicon layer 32 lower floor.
Full backplane solar battery structure also comprises Facad structure, and described Facad structure comprises the front-surface field 6, front passivation layer 7 and the antireflection layer 8 that are successively set on cell substrate 1 front from the inside to the outside.
Described antireflection layer 8 is SiN
xfilm or SiO
2film or SiN
x/ SiO
2laminate film can certainly be that other have the film of antireflective effect; And/or described front passivation layer 7 is Al
2o
3film or Al
2o
3/ SiN
xlaminate film can certainly be that other have the film of surface passivation effect; And/or described front-surface field 6 is for having front field effect active layer.
Described local passivation protection layer 5 is insulating cement film or SiN
xfilm or SiO
2film can certainly be that other have the insulation film of protection or passivation.
Described tunnelling passivation layer 2 is SiO
2film or MoO
xfilm or Al
2o
3film can certainly be that other have the film of passivation, tunnelling characteristics.
The thickness of described tunnelling passivation layer 2 is less than 2nm.
The preparation method of the full backplane solar battery structure that the present invention relates to can have following several mode:
A preparation method for full backplane solar battery structure, the step that the method is prepared at the cell substrate back side is as follows:
A () is by the back side single-sided polishing of cell substrate 1;
B () prepares tunnelling passivation layer 2 at the back side of cell substrate 1;
C () prepares polysilicon layer at the lower surface of tunnelling passivation layer 2;
D polysilicon layer is carried out boron DIFFUSION TREATMENT by (), then local phosphorus diffusion process, forms the N-type heavily doped polysilicon layer 31 and P type polysilicon layer 32 that are set up in parallel;
E back side is formed in () removal step (d) Pyrex and phosphorosilicate glass and the front protecting layer formed in the preparation process of cell substrate 1 front;
(f) Passivation Treatment;
G () prepares electrode layer at the lower surface of polysilicon layer, the negative electrode 41 described electrode layer being had contact with N-type heavily doped polysilicon layer 31 and the positive electrode 42 contacted with P type polysilicon layer 32;
H () prepares local passivation protection layer 5 between adjacent negative electrode 41 and positive electrode 42, guarantee that described local passivation protection layer 5 is arranged between the Metal Contact position of N-type heavily doped polysilicon layer 31 and P type polysilicon layer 32 lower floor.
Be prepared cell substrate front before the preparation of the cell substrate back side, its process is as follows:
(1) cell substrate 1 is cleaned;
(2) front-surface field 6 is diffuseed to form at the front phosphorus of cell substrate 1;
(3) PSG that phosphorus diffuses to form is removed;
(4) then front passivation layer 7 and antireflection layer 8 is prepared successively at the upper surface of front-surface field 6;
(5) front BSG protective layer and the preparation of other protective layers.
Also have a kind of preparation method of full backplane solar battery structure, the step that the method is prepared at the cell substrate back side is as follows:
A () is by the back side single-sided polishing of cell substrate 1;
B () prepares tunnelling passivation layer 2 at the back side of cell substrate 1;
C () prepares polysilicon layer at the lower surface of tunnelling passivation layer 2;
D () be local boron ion implantation in polysilicon layer, then local phosphonium ion injects, and forms the N-type heavily doped polysilicon layer 31 and P type polysilicon layer 32 that are set up in parallel;
(e) annealing in process, and the front protecting layer that formed in the backside oxide layer that in removal step (d), the back side is formed and cell substrate 1 front preparation process;
(f) Passivation Treatment;
G () prepares electrode layer at the lower surface of polysilicon layer, the negative electrode 41 described electrode layer being had contact with N-type heavily doped polysilicon layer 31 and the positive electrode 42 contacted with P type polysilicon layer 32;
H () prepares local passivation protection layer 5 between adjacent negative electrode 41 and positive electrode 42, guarantee that described local passivation protection layer 5 is arranged between the Metal Contact position of N-type heavily doped polysilicon layer 31 and P type polysilicon layer 32 lower floor.
Be prepared cell substrate front before the preparation of the cell substrate back side, its process is as follows:
(6) cell substrate 1 is cleaned;
(7) front-surface field 6 is diffuseed to form at the front phosphorus of cell substrate 1;
(8) PSG that phosphorus diffuses to form is removed;
(9) then front passivation layer 7 and antireflection layer 8 is prepared successively at the upper surface of front-surface field 6;
(10) front BSG protective layer and the preparation of other protective layers.
Also have a kind of preparation method of full backplane solar battery structure, the step that the method is prepared at the cell substrate back side is as follows:
A () is by the back side single-sided polishing of cell substrate 1;
B () prepares tunnelling passivation layer 2 at the back side of cell substrate 1;
C () prepares amorphous silicon layer at the lower surface of tunnelling passivation layer 2, and the high temperature anneal, form polysilicon layer;
D polysilicon layer is carried out local boron DIFFUSION TREATMENT by (), then local phosphorus diffusion process, forms the N-type heavily doped polysilicon layer 31 and P type polysilicon layer 32 that are set up in parallel;
E back side is formed in () removal step (d) Pyrex and phosphorosilicate glass and the front protecting layer formed in the preparation process of cell substrate 1 front;
(f) Passivation Treatment;
G () prepares electrode layer at the lower surface of polysilicon layer, the negative electrode 41 described electrode layer being had contact with N-type heavily doped polysilicon layer 31 and the positive electrode 42 contacted with P type polysilicon layer 32;
H () prepares local passivation protection layer 5 between adjacent negative electrode 41 and positive electrode 42, guarantee that described local passivation protection layer 5 is arranged between the Metal Contact position of N-type heavily doped polysilicon layer 31 and P type polysilicon layer 32 lower floor.
Be prepared cell substrate front before the preparation of the cell substrate back side, its process is as follows:
(11) cell substrate 1 is cleaned;
(12) front-surface field 6 is diffuseed to form at the front phosphorus of cell substrate 1;
(13) PSG that phosphorus diffuses to form is removed;
(14) then front passivation layer 7 and antireflection layer 8 is prepared successively at the upper surface of front-surface field 6;
(15) front BSG protective layer and the preparation of other protective layers.
The present invention has following advantage:
(1) without the need to diffuseing to form PN junction, adopt ultra-thin tunnelling passivation layer and polysilicon layer, comprise N-type heavily doped polysilicon layer and the P type polysilicon layer of broad-band gap in polysilicon layer, this structure can make silicon body have good surface passivation effect, forms the selectivity transport layer of charge carrier.
(2) polysilicon layer and electrode directly form large-area contact, avoid the compound of traditional solar cell in Metal contact regions, while maintenance fill factor, curve factor, decrease the loss of open circuit voltage.
(3) the full backplane solar battery structure that the present invention relates to is simple, and processing step reduces in a large number relative to traditional full backplane solar cell, is applicable to industrialization and produces.
Above-described specific embodiment; technical problem, technical scheme and beneficial effect that the present invention solves are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a full backplane solar battery structure, it is characterized in that, it comprises:
Cell substrate (1);
Tunnelling passivation layer (2), described tunnelling passivation layer (2) is arranged on the back side of cell substrate (1);
Polysilicon layer, described polysilicon layer is arranged on the lower surface of tunnelling passivation layer (2), and described polysilicon layer has the N-type heavily doped polysilicon layer (31) and P type polysilicon layer (32) that are set up in parallel.
2. full backplane solar battery structure according to claim 1, it is characterized in that: also comprise electrode layer, electrode layer is arranged on the lower surface of polysilicon layer, and described electrode layer has the negative electrode (41) contacted with N-type heavily doped polysilicon layer (31) and the positive electrode (42) contacted with P type polysilicon layer (32), and be provided with local passivation protection layer (5) between adjacent negative electrode (41) and positive electrode (42), described local passivation protection layer (5) is arranged between the Metal Contact position of N-type heavily doped polysilicon layer (31) and P type polysilicon layer (32) lower floor.
3. full backplane solar battery structure according to claim 1 and 2, it is characterized in that: also comprise Facad structure, described Facad structure comprises the front-surface field (6), front passivation layer (7) and the antireflection layer (8) that are successively set on cell substrate (1) front from the inside to the outside.
4. full backplane solar battery structure according to claim 3, is characterized in that: described antireflection layer (8) is SiN
xfilm or SiO
2film or SiN
x/ SiO
2laminate film; And/or described front passivation layer (7) is Al
2o
3film or Al
2o
3/ SiN
xlaminate film; And/or described front-surface field (6) is for having front field effect active layer.
5. full backplane solar battery structure according to claim 2, is characterized in that: described local passivation protection layer (5) is insulating cement film or SiN
xfilm or SiO
2film.
6. full backplane solar battery structure according to claim 1, is characterized in that: described tunnelling passivation layer (2) is SiO
2film or MoO
xfilm or Al
2o
3film.
7. full backplane solar battery structure according to claim 1, is characterized in that: the thickness of described tunnelling passivation layer (2) is less than 2nm.
8. a preparation method for the full backplane solar battery structure according to any one of claim 1 to 7, is characterized in that the step that the method is prepared at the cell substrate back side is as follows:
A () is by the back side single-sided polishing of cell substrate (1);
B () prepares tunnelling passivation layer (2) at the back side of cell substrate (1);
C () prepares polysilicon layer at the lower surface of tunnelling passivation layer (2);
D polysilicon layer is carried out boron DIFFUSION TREATMENT by (), then local phosphorus diffusion process, forms the N-type heavily doped polysilicon layer (31) and P type polysilicon layer (32) that are set up in parallel;
The front protecting layer formed in e back side is formed in () removal step (d) Pyrex and phosphorosilicate glass and cell substrate 1 front preparation process;
(f) Passivation Treatment;
G () prepares electrode layer at the lower surface of polysilicon layer, the negative electrode (41) described electrode layer being had contact with N-type heavily doped polysilicon layer (31) and the positive electrode (42) contacted with P type polysilicon layer (32);
H () prepares local passivation protection layer (5) between adjacent negative electrode (41) and positive electrode (42), guarantee that described local passivation protection layer (5) is arranged between the Metal Contact position of N-type heavily doped polysilicon layer (31) and P type polysilicon layer (32) lower floor.
9. a preparation method for the full backplane solar battery structure according to any one of claim 1 to 7, is characterized in that the step that the method is prepared at the cell substrate back side is as follows:
A () is by the back side single-sided polishing of cell substrate (1);
B () prepares tunnelling passivation layer (2) at the back side of cell substrate (1);
C () prepares polysilicon layer at the lower surface of tunnelling passivation layer (2);
D () be local boron ion implantation in polysilicon layer, then local phosphonium ion injects, and forms the N-type heavily doped polysilicon layer (31) and P type polysilicon layer (32) that are set up in parallel;
(e) annealing in process, and the front protecting layer that formed in the oxide layer that in removal step (d), the back side is formed and cell substrate 1 front preparation process;
(f) Passivation Treatment;
G () prepares electrode layer at the lower surface of polysilicon layer, the negative electrode (41) described electrode layer being had contact with N-type heavily doped polysilicon layer (31) and the positive electrode (42) contacted with P type polysilicon layer (32);
H () prepares local passivation protection layer (5) between adjacent negative electrode (41) and positive electrode (42), guarantee that described local passivation protection layer (5) covers between the Metal Contact position of N-type heavily doped polysilicon layer (31) and P type polysilicon layer (32) lower floor.
10. a preparation method for the full backplane solar battery structure according to any one of claim 1 to 7, is characterized in that the step that the method is prepared at the cell substrate back side is as follows:
A () is by the back side single-sided polishing of cell substrate (1);
B () prepares tunnelling passivation layer (2) at the back side of cell substrate (1);
C () prepares amorphous silicon layer at the lower surface of tunnelling passivation layer (2), and the high temperature anneal, form polysilicon layer;
D polysilicon layer is carried out local boron DIFFUSION TREATMENT by (), then local phosphorus diffusion process, forms the N-type heavily doped polysilicon layer (31) and P type polysilicon layer (32) that are set up in parallel;
E back side is formed in () removal step (d) Pyrex and phosphorosilicate glass and the front protecting layer formed in the preparation process of cell substrate 1 front;
(f) Passivation Treatment;
G () prepares electrode layer at the lower surface of polysilicon layer, the negative electrode (41) described electrode layer being had contact with N-type heavily doped polysilicon layer (31) and the positive electrode (42) contacted with P type polysilicon layer (32);
H () prepares local passivation protection layer (5) between adjacent negative electrode (41) and positive electrode (42), guarantee that described local passivation protection layer (5) is arranged between the Metal Contact position of N-type heavily doped polysilicon layer (31) and P type polysilicon layer (32) lower floor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510994224.3A CN105390555A (en) | 2015-12-25 | 2015-12-25 | Full-back-electrode solar cell structure and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510994224.3A CN105390555A (en) | 2015-12-25 | 2015-12-25 | Full-back-electrode solar cell structure and preparation method therefor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105390555A true CN105390555A (en) | 2016-03-09 |
Family
ID=55422632
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510994224.3A Pending CN105390555A (en) | 2015-12-25 | 2015-12-25 | Full-back-electrode solar cell structure and preparation method therefor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105390555A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105742391A (en) * | 2016-04-27 | 2016-07-06 | 中国科学院宁波材料技术与工程研究所 | Tunnel silicon oxide passivated contact solar cell and preparation method thereof |
| CN105826428A (en) * | 2016-04-26 | 2016-08-03 | 泰州中来光电科技有限公司 | Passivated contact N type crystal silicon cell, preparation method, assembly and system |
| CN106252449A (en) * | 2016-08-26 | 2016-12-21 | 泰州中来光电科技有限公司 | Local doping front-surface field back contact battery and preparation method thereof and assembly, system |
| CN106653887A (en) * | 2016-12-30 | 2017-05-10 | 中国科学院微电子研究所 | Back junction backcontact solar cell |
| CN107275418A (en) * | 2017-07-07 | 2017-10-20 | 常州亿晶光电科技有限公司 | One side POLO batteries and preparation method thereof |
| CN107833929A (en) * | 2017-10-13 | 2018-03-23 | 浙江昱辉阳光能源江苏有限公司 | The silicon heterogenous battery and manufacture method of a kind of one texture-etching side |
| CN108831953A (en) * | 2017-05-04 | 2018-11-16 | 上海凯世通半导体股份有限公司 | The production method of solar battery |
| CN110931604A (en) * | 2019-12-10 | 2020-03-27 | 江苏微导纳米科技股份有限公司 | Preparation method of solar cell with Topcon structure |
| CN111052408A (en) * | 2017-09-15 | 2020-04-21 | 原子能和替代能源委员会 | Method for manufacturing a homojunction photovoltaic cell |
| CN111864008A (en) * | 2019-04-15 | 2020-10-30 | 江苏顺风光电科技有限公司 | Preparation method of P-type heterojunction full back electrode contact crystalline silicon photovoltaic cell |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140130854A1 (en) * | 2012-11-12 | 2014-05-15 | Samsung Sdi Co., Ltd. | Photoelectric device and the manufacturing method thereof |
| CN104810416A (en) * | 2014-01-29 | 2015-07-29 | Lg电子株式会社 | Solar cell and method for manufacturing the same |
| CN104934486A (en) * | 2014-03-17 | 2015-09-23 | Lg电子株式会社 | Solar cell |
| CN104979409A (en) * | 2014-04-08 | 2015-10-14 | Lg电子株式会社 | Solar Cell And Method For Manufacturing The Same |
| CN205231078U (en) * | 2015-12-25 | 2016-05-11 | 常州天合光能有限公司 | Full back of body utmost point solar battery structure |
-
2015
- 2015-12-25 CN CN201510994224.3A patent/CN105390555A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140130854A1 (en) * | 2012-11-12 | 2014-05-15 | Samsung Sdi Co., Ltd. | Photoelectric device and the manufacturing method thereof |
| CN104810416A (en) * | 2014-01-29 | 2015-07-29 | Lg电子株式会社 | Solar cell and method for manufacturing the same |
| CN104934486A (en) * | 2014-03-17 | 2015-09-23 | Lg电子株式会社 | Solar cell |
| CN104979409A (en) * | 2014-04-08 | 2015-10-14 | Lg电子株式会社 | Solar Cell And Method For Manufacturing The Same |
| CN205231078U (en) * | 2015-12-25 | 2016-05-11 | 常州天合光能有限公司 | Full back of body utmost point solar battery structure |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105826428A (en) * | 2016-04-26 | 2016-08-03 | 泰州中来光电科技有限公司 | Passivated contact N type crystal silicon cell, preparation method, assembly and system |
| CN105742391B (en) * | 2016-04-27 | 2017-03-08 | 中国科学院宁波材料技术与工程研究所 | A kind of tunnelling silica nitrogen layer passivation contact solar cell and preparation method thereof |
| CN105742391A (en) * | 2016-04-27 | 2016-07-06 | 中国科学院宁波材料技术与工程研究所 | Tunnel silicon oxide passivated contact solar cell and preparation method thereof |
| CN106252449A (en) * | 2016-08-26 | 2016-12-21 | 泰州中来光电科技有限公司 | Local doping front-surface field back contact battery and preparation method thereof and assembly, system |
| CN106252449B (en) * | 2016-08-26 | 2017-09-26 | 泰州中来光电科技有限公司 | Local doping front-surface field back contact battery and preparation method thereof and component, system |
| CN106653887A (en) * | 2016-12-30 | 2017-05-10 | 中国科学院微电子研究所 | Back junction backcontact solar cell |
| CN108831953A (en) * | 2017-05-04 | 2018-11-16 | 上海凯世通半导体股份有限公司 | The production method of solar battery |
| CN107275418A (en) * | 2017-07-07 | 2017-10-20 | 常州亿晶光电科技有限公司 | One side POLO batteries and preparation method thereof |
| CN111052408A (en) * | 2017-09-15 | 2020-04-21 | 原子能和替代能源委员会 | Method for manufacturing a homojunction photovoltaic cell |
| CN111052408B (en) * | 2017-09-15 | 2023-07-18 | 原子能和替代能源委员会 | Method for manufacturing homojunction photovoltaic cells |
| CN107833929A (en) * | 2017-10-13 | 2018-03-23 | 浙江昱辉阳光能源江苏有限公司 | The silicon heterogenous battery and manufacture method of a kind of one texture-etching side |
| CN111864008A (en) * | 2019-04-15 | 2020-10-30 | 江苏顺风光电科技有限公司 | Preparation method of P-type heterojunction full back electrode contact crystalline silicon photovoltaic cell |
| CN110931604A (en) * | 2019-12-10 | 2020-03-27 | 江苏微导纳米科技股份有限公司 | Preparation method of solar cell with Topcon structure |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105390555A (en) | Full-back-electrode solar cell structure and preparation method therefor | |
| KR101626248B1 (en) | Silicon solar cell and method of manufacturing the same | |
| CN108666393B (en) | Solar cell and preparation method thereof | |
| CN110707159A (en) | P-type crystalline silicon solar cell with front surface and back surface in full-area contact passivation and preparation method thereof | |
| CN102610686B (en) | Back contact crystal silicon solar battery and manufacture process of back contact crystal silicon solar battery | |
| CN102751371B (en) | Solar thin film battery and manufacturing method thereof | |
| CN103022265B (en) | Solar battery sheet and method of diffusion thereof | |
| WO2023093604A1 (en) | Solar cell and preparation method for solar cell | |
| WO2016068711A2 (en) | Back side contacted wafer-based solar cells with in-situ doped crystallized silicon oxide regions | |
| CN111477720A (en) | Passivated contact N-type back junction solar cell and preparation method thereof | |
| KR101612133B1 (en) | Metal Wrap Through type solar cell and method for fabricating the same | |
| KR20180045587A (en) | Solar cell and meaufacturing method of solar cell | |
| CN110571303B (en) | Preparation method of P-type crystalline silicon battery | |
| CN115241299A (en) | Solar cell and photovoltaic module | |
| CN111640826A (en) | Preparation method of battery conducting by utilizing selective contact | |
| CN103367540A (en) | Back passivation solar cell and manufacturing method thereof | |
| CN103022174B (en) | A kind of metal-through type emitters on back side crystal silicon solar battery based on n-type silicon chip and preparation method thereof | |
| CN104868011A (en) | Manufacturing method of N type all-aluminum back emitter solar cell and solar cell prepared by the same | |
| CN205231078U (en) | Full back of body utmost point solar battery structure | |
| CN115176345A (en) | Solar cell laminated passivation structure and preparation method thereof | |
| CN105118891A (en) | Anti-oxidation front electrode solar cell and method for preparing same | |
| CN102738263B (en) | Doping unit, doping wafer, doping method, battery and manufacturing method | |
| WO2024000399A1 (en) | Solar cell structure and manufacturing method therefor | |
| CN103943693B (en) | Manufacturing method of back contact-type solar cell structure based on P-type silicon substrate | |
| CN107910398B (en) | Manufacturing method of P-type PERC double-sided solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20160309 |
|
| RJ01 | Rejection of invention patent application after publication |