CN104868011A - Manufacturing method of N type all-aluminum back emitter solar cell and solar cell prepared by the same - Google Patents
Manufacturing method of N type all-aluminum back emitter solar cell and solar cell prepared by the same Download PDFInfo
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- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 239000000758 substrate Substances 0.000 claims abstract description 87
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 56
- 238000002161 passivation Methods 0.000 claims abstract description 48
- 239000004411 aluminium Substances 0.000 claims abstract description 45
- 238000005245 sintering Methods 0.000 claims abstract description 42
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 229910052709 silver Inorganic materials 0.000 claims abstract description 25
- 239000004332 silver Substances 0.000 claims abstract description 25
- 238000005530 etching Methods 0.000 claims abstract description 16
- 238000007639 printing Methods 0.000 claims abstract description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 7
- 239000011574 phosphorus Substances 0.000 claims abstract description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000001035 drying Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 160
- 238000000034 method Methods 0.000 claims description 43
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 34
- 239000010703 silicon Substances 0.000 claims description 34
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 16
- 239000000843 powder Substances 0.000 claims description 12
- 239000002002 slurry Substances 0.000 claims description 12
- 239000000654 additive Substances 0.000 claims description 11
- 230000000996 additive effect Effects 0.000 claims description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 239000000428 dust Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000010276 construction Methods 0.000 claims description 7
- 239000002356 single layer Substances 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 5
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- 238000009792 diffusion process Methods 0.000 abstract description 2
- -1 silver-aluminium Chemical compound 0.000 abstract 1
- 239000010408 film Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- ZFOZVQLOBQUTQQ-UHFFFAOYSA-N Tributyl citrate Chemical compound CCCCOC(=O)CC(O)(C(=O)OCCCC)CC(=O)OCCCC ZFOZVQLOBQUTQQ-UHFFFAOYSA-N 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 description 2
- 229940005991 chloric acid Drugs 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 229920002521 macromolecule Polymers 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- 229910000632 Alusil Inorganic materials 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000005041 Mylar™ Substances 0.000 description 1
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a manufacturing method of an N type all-aluminum back emitter solar cell and a solar cell prepared by the same. The manufacturing method comprises: providing an N type semiconductor substrate, removing a surface damage layer, and preparing a surface pile face; carrying out phosphorus diffusion to form an n<+> doping layer and etching and removing the parts, formed at the edge and the back, of the n<+> doping layer; preparing an antireflection layer at the front side; printing a back aluminium paste and carrying out sintering to form a full-area aluminum back emitter; carrying out etching at the back and removing the aluminium paste and keeping the aluminum back emitter; preparing a back passivation layer at the back; printing a front electrode silver paste and carrying out drying, printing a back electrode silver-aluminium paste and carrying out drying, and carrying out sintering to form electrode ohmic contact. According to the invention, a problem of leak current existence at the boundary of the local back aluminium emitter and the back silver electrode can be solved; the solar cell quality is improved; and the conversion efficiency is improved by increasing the effective area of the PN node. With the back passivation layer, the open-circuit voltage and short-circuit current of the cell are increased. Moreover, the dual-face solar cell can be manufactured, so that the cell energy output is enhanced and the conversion efficiency is improved.
Description
Technical field
The present invention relates to technical field of solar batteries, specifically a kind of improve the full aluminized emitter solar cell of N-type of conventional aluminum emitters on back side conversion efficiency of solar cell manufacture method and the solar cell prepared of the method.
Background technology
Solar cell is the semiconductor device that a kind of luminous energy by the sun is converted into electric energy.Because it is Green Product, environmental pollution can not be caused, and utilization is renewable resource, so under current energy starved situation, solar cell has vast potential for future development.
Solar cell of a great variety, wherein, N-type solar cell, owing to can reach higher conversion efficiency, receives the concern of more and more insider." the boron oxygen to " of P-type silicon substrate can cause efficiency attenuation problem, adopts N-type silicon substrate then not have this problem.The minority carrier life time of General N type silicon is longer, generally at 100 more than μ s, so N-type silicon substrate is conducive to the photoelectric efficiency improving solar cell.N-type silicon solar cell has multiple implementation, emitter junction can be made in front, the back side, two-sided, can also make the structures such as SE, EWT, PERL, MWT and HIT.
Aluminized emitter solar cell [CN201410476345, CN201410011631] is the one of N-type solar cell.Its Making programme is similar to the flow process of conventional P type solar cell, mainly silicon substrate and electrode fabrication slightly different.The manufacture craft of aluminized emitter can realize shifting from P-type silicon solar battery sheet to the industrialization of N-type silicon solar cell manufacturing process.Uniquely different differences is that making surface field (FSF) with phosphorus diffusing step replaces emitter, and forms aluminized emitter field in co-sintering operation.Aluminized emitter battery can also utilize IC Industry Waste n type single crystal silicon sheet to manufacture solar cell [CN200620047100].
Conventional N-type aluminized emitter solar cell as shown in Figure 1.Its common manufacturing process is: remove the surface damage layer of N-type silicon chip 100 and prepare matte-phosphorus diffusion making n
+layer 101-etching edge and remove glassy layer-prepare antireflection layer 102-printed back silver electrode 106 and dry-printed back field aluminium paste 103 is also dried-print front silver electrode 105 and dry-sinter formation aluminized emitter 104.Aluminized emitter solar battery process cost is low, simple to operate, is easy to realize industrialization; But by cell piece that the production method of conventional aluminized emitter battery is made, because aluminized emitter 104 is formed in sintering process, therefore back surface aluminized emitter 104 is not full back surface field, be easy to be destroyed with back silver electrode 106 PN junction that has a common boundary, thus easily forming leakage current, the existence of this electric leakage causes battery efficiency significantly to reduce; In addition, aluminized emitter 104 does not cover the just individual back side, and make back side non-fully aluminized emitter, back silver electrode place is formed without PN junction, and PN junction effective area is less than normal, thus efficiency is also on the low side.
Summary of the invention
The object of the invention is for prior art Problems existing, provide a kind of improve the full aluminized emitter solar cell of N-type of conversion efficiency of solar cell manufacture method and the solar cell prepared of the method.
The object of the invention is to solve by the following technical programs:
A manufacture method for the full aluminized emitter solar cell of N-type, is characterized in that: the step of this manufacture method is as follows:
(1) N type semiconductor substrate is provided, surface damage layer and preparation table velvet face are removed to described N type semiconductor substrate;
(2) phosphorus is adopted to diffuse to form n at described N type semiconductor substrate surface
+doped layer, and etching removes the n at edge and the back side
+doped layer;
(3) at n
+antireflection layer is prepared on the surface in the side that doped layer deviates from N type semiconductor substrate face;
(4) printing covers the back side aluminium paste of the whole back surface of N type semiconductor substrate, and sintering makes the back surface of described N type semiconductor substrate form gross area aluminized emitter;
(5) back-etching of N type semiconductor substrate removes aluminium paste, surplus aluminized emitter;
(6) side deviating from described N type semiconductor substrate back at aluminized emitter prepares back of the body passivation layer on the surface;
(7) print respectively front electrode silver slurry form positive electrode and dry, printed back electrode silver aluminium paste forms back electrode drying, sintering forms electrode ohmic contact and namely to complete the full aluminized emitter solar cell of this N-type.
Composition and the weight percentage of the back side aluminium paste aluminum slurry used in described step (4) are: the aluminium powder of 60-80%, the organic carrier of 15-30%, the glass dust of 0.5-8% and the additive of 0.1-5%.
Sintering temperature peak value in described step (4) is 300-900 DEG C, and sintering time is 15s-10min.
Sintering temperature peak value in described step (4) is 600-850 DEG C, and sintering time is 40s-2min.
Antireflection layer in described step (3) is silicon nitride layer, in indium tin oxide layer, zinc oxide film, silicon oxide layer, alumina layer, hydrogenated amorphous silicon layer, hydrogenated microcrystalline silicon, hydrogenated amorphous silicon carbide layer any one or comprise two or more combination layer of silicon nitride layer.
Back of the body passivation layer in described step (6) is the single layer structure of alumina layer, silicon oxide layer, silicon nitride layer or silicon oxynitride layer formation or comprises at least two-layer laminated construction.
Composition and the weight percentage of the back electrode silver aluminium paste in described step (7) are: the additive of the silver powder of 65-95%, the aluminium powder of 0.2-10%, the glass dust of 0.5-25%, the organic carrier of 4-30% and 0.1-5%.
Sintering temperature peak value used in described step (7) is 800-1000 DEG C, and sintering time is 30s-5min.
N type semiconductor substrate used in described step (1) is monocrystalline silicon piece or polysilicon chip.
Solar cell prepared by the manufacture method of the full aluminized emitter solar cell of N-type, is characterized in that:
This solar cell comprises N type semiconductor substrate;
Cover the n of described N type semiconductor substrate face
+doped layer;
Cover described n
+doped layer deviates from the antireflection layer on the surface, side of described N type semiconductor substrate face;
Be positioned at described N type semiconductor substrate back and cover the aluminized emitter of whole N type semiconductor substrate back;
Cover described aluminized emitter and deviate from back of the body passivation layer on the surface, side of described N type semiconductor substrate back;
Be positioned at the positive electrode of N type semiconductor substrate face and be positioned at the back electrode of N type semiconductor substrate back.
The thickness of described back of the body passivation layer is 1nm ~ 100nm and is the double-decker of alumina layer and silicon nitride layer, and described alumina layer is between described silicon nitride layer and described aluminized emitter.
The present invention has the following advantages compared to existing technology:
(1) full aluminized emitter design prevents the local aluminum emitters on back side of traditional aluminized emitter battery and back silver electrode interface place to form the problem of leakage current.
(2) full aluminized emitter design is amassed emitter relative to traditional non-fully back side and is added effective PN junction area, improves the energy conversion efficiency of solar cell.
(3) carry on the back the back side of passivation layer to semiconductor and there is passivation, the dangling bonds of bonding silicon chip back surface and inside, the back side, repair lattice defect, the complex centre of silicon chip back side is reduced, thus increase the back side carrier life-span, the loss of effective minimizing battery open circuit voltage and short circuit current, improves the conversion efficiency of battery.
(4) back-etching falls aluminium paste, and preparation back of the body passivation layer, usual back of the body passivation layer is transparent, this structure exposes the back side of the semi-conductor silicon chip that N type semiconductor substrate adopts, therefore this solar cell can be made into double-side cell, enable the back side of the semi-conductor silicon chip come out accept illumination, add the Energy transmission of battery, thus improve the conversion efficiency of solar cell.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below.Apparently, the accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Accompanying drawing 1 is the basic block diagram of N-type back of the body aluminium emitter solar battery in prior art, wherein: 100-N-type silicon chip; 101-n
+layer; 102-antireflection layer; 103-back surface field aluminium paste; 104-aluminized emitter; 105-front silver electrode; 106-back silver electrode;
The basic structure schematic diagram of the full aluminized emitter solar cell of N-type that accompanying drawing 2 provides for the embodiment of the present invention two, wherein: 300-N type semiconductor substrate; 301-n
+doped layer; 302-antireflection layer; 304-aluminized emitter; 305-positive electrode; 306-back electrode; 307-back of the body passivation layer;
The manufacture method flow chart of the full aluminized emitter solar cell of N-type that accompanying drawing 3 provides for the embodiment of the present invention one.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is further illustrated.
As shown in Figure 3: the manufacture method of the full aluminized emitter solar cell of a kind of N-type, the step of this manufacture method is as follows:
(1) provide monocrystalline silicon piece or polysilicon chip as N type semiconductor substrate, surface damage layer and preparation table velvet face are removed to described N type semiconductor substrate;
(2) phosphorus is adopted to diffuse to form n at described N type semiconductor substrate surface
+doped layer, and etching removes the n at edge and the back side
+doped layer;
(3) at n
+antireflection layer is prepared on the surface in the side that doped layer deviates from N type semiconductor substrate face, this antireflection layer is silicon nitride layer, in indium tin oxide layer, zinc oxide film, silicon oxide layer, alumina layer, hydrogenated amorphous silicon layer, hydrogenated microcrystalline silicon, hydrogenated amorphous silicon carbide layer any one or comprise two or more combination layer of silicon nitride layer;
(4) printing covers the back side aluminium paste of the whole back surface of N type semiconductor substrate, sintering makes the back surface of described N type semiconductor substrate form gross area aluminized emitter, sintering temperature peak value is 300-900 DEG C, sintering time is 15s-10min, and preferred version is sintering temperature peak value is 600-850 DEG C, sintering time is 40s-2min; Wherein the composition of back side aluminium paste aluminum slurry used and weight percentage are: the aluminium powder of 60-80%, the organic carrier of 15-30%, the glass dust of 0.5-8% and the additive of 0.1-5%;
(5) back-etching of N type semiconductor substrate removes aluminium paste, surplus aluminized emitter;
(6) side deviating from described N type semiconductor substrate back at aluminized emitter prepares back of the body passivation layer on the surface, and back of the body passivation layer is the single layer structure that forms of alumina layer, silicon oxide layer, silicon nitride layer or silicon oxynitride layer or comprises at least two-layer laminated construction;
(7) print respectively front electrode silver slurry form positive electrode and dry, printed back electrode silver aluminium paste forms back electrode drying, wherein the composition of back electrode silver aluminium paste and weight percentage are: the additive of the silver powder of 65-95%, the aluminium powder of 0.2-10%, the glass dust of 0.5-25%, the organic carrier of 4-30% and 0.1-5%; Sintering forms electrode ohmic contact and namely to complete the full aluminized emitter solar cell of this N-type; Wherein sintering temperature peak value is 800-1000 DEG C, and sintering time is 30s-5min.
As shown in Figure 2, adopt solar cell prepared by said method, this solar cell comprises N type semiconductor substrate 300; Cover the n in described N type semiconductor substrate 300 front
+doped layer 301; Cover described n
+doped layer 301 deviates from the antireflection layer 302 on the surface, side in described N type semiconductor substrate 300 front; Be positioned at described N type semiconductor substrate 300 back side and cover the aluminized emitter 304 at whole N type semiconductor substrate 300 back side; Cover described aluminized emitter 304 and deviate from back of the body passivation layer 307 on the surface, side at described N type semiconductor substrate 300 back side; Be positioned at the positive electrode 305 in N type semiconductor substrate 300 front and be positioned at the back electrode 306 at N type semiconductor substrate 300 back side.Wherein carry on the back the thickness of passivation layer 307 to be 1nm ~ 100nm and to be the double-decker of alumina layer and silicon nitride layer, and described alumina layer is between described silicon nitride layer and described aluminized emitter 304.
Be more than core concept of the present invention, for enabling above-mentioned purpose of the present invention, feature and advantage become apparent more, are described in detail below further combined with accompanying drawing to the specific embodiment of the present invention.
Embodiment one
Present embodiments provide the manufacture method of a kind of N-type aluminium back of the body solar cell, the flow process of this manufacture method is as shown in Fig. 3, and the step of this manufacture method is as follows:
(1) provide monocrystalline silicon piece or polysilicon chip as N type semiconductor substrate; Surface damage layer and preparation table velvet face are removed to described N type semiconductor substrate.
(2) phosphorus is adopted to diffuse to form n at described N type semiconductor substrate surface
+doped layer, and etching removes the n at edge and the back side
+doped layer.
Usually POCl is used
3diffuse to form n
+doped layer.N
+doped layer is not only formed in the front (front surface) of N type semiconductor substrate, also can be formed at edge and the back side; So go PSG and etching to the edge of N type semiconductor substrate and the back side, remove the n at edge and the back side
+doped layer.
It should be noted that, " front side of silicon wafer " refers to the surface of silicon chip matrix towards solar radiation side, and " silicon chip back side " refers to that silicon chip matrix deviates from the surface of solar radiation side.
(3) at n
+antireflection layer is prepared on the surface in the side that doped layer deviates from N type semiconductor substrate face.
The most frequently used material of antireflection layer is silicon nitride.Silicon nitride film can strengthen the absorption of solar battery sheet to light, effectively improves the photoelectric conversion efficiency of battery; Contain a large amount of H atom in silicon nitride film layer, in the process of thin film deposition, H atom can arrive battery surface and inside simultaneously simultaneously, in conjunction with the dangling bonds in battery, plays the effect of table passivation and body passivation, reduces the compound of charge carrier.The optimization thickness of silicon nitride film is 75-95 nanometer.The material of antireflection layer also can be in following material any one, or comprise two or more combination layer any of silicon nitride layer: tin indium oxide (ITO) layer, zinc oxide film, silicon oxide layer, alumina layer, hydrogenated amorphous silicon layer, hydrogenated microcrystalline silicon, hydrogenated amorphous silicon carbide layer.
(4) printing covers the back side aluminium paste of the whole back surface of N type semiconductor substrate, and sintering makes the back surface of described N type semiconductor substrate form gross area aluminized emitter.
Printing can adopt the one in silk-screen printing technique, stencilization or other mode of printings.
The composition of aluminum slurry used and weight percentage are: the aluminium powder of 60-80%, the organic carrier of 15-30%, the glass dust of 0.5-8% and the additive of 0.1-5%.Wherein metallic aluminium powder can be spherical or other shapes, and optimize shape of choosing shuttles, spherical metal aluminium powder purity is greater than 99.8%.Organic carrier comprises terpinol, ethyl cellulose, macromolecule resin, dispersant; Described additive is one or more in phenmethylol, butyl carbitol, butyl carbitol acetate, dibutyl phthalate and tributyl citrate; Described macromolecule resin is one or more in phenolic resins, epoxy resin and mylar.Metal oxide or alusil alloy powder can also be added in aluminium paste.
The back side aluminium paste of printing covers whole backside area of N type semiconductor substrate, thus makes the back surface of described N type semiconductor substrate form gross area aluminium emitter.With in prior art due to be limited to first print carry on the back silver and must a printing area aluminium paste structure compared with, the emitter at the full back side prevents local back aluminium emitter and back silver electrode interface place to form the problem of leakage current.
Sintering temperature peak value used in this step is 300-900 DEG C, and sintering time is 5s-10min; Preferred version is sintering temperature peak value is 600-850 DEG C, and sintering time is 40s-2min.
(5) back-etching of N type semiconductor substrate removes aluminium paste, surplus aluminized emitter.
Etching process, for first to etch 5min with chloric acid, then etches 1.5min with potassium hydroxide.As residual in also having, repeat above process.As need etching speed be accelerated, also chloric acid can be heated to 50 DEG C and etch.
(6) side deviating from described N type semiconductor substrate back at aluminized emitter prepares back of the body passivation layer on the surface, and this back of the body passivation layer covers whole back sides of N type semiconductor substrate.
Chemical vapour deposition (CVD) (PECVD) technique or ald (ALD) process deposits back of the body passivation layer can be strengthened by using plasma.The back of the body back side of passivation layer to silicon chip matrix has passivation, the dangling bonds of bonded silica sheet matrix back surface and inside, the back side, repair lattice defect, the complex centre at the silicon chip matrix back side is reduced, thus increase the back side carrier life-span, the loss of effective minimizing battery open circuit voltage and short circuit current, improves the conversion efficiency of battery.
In the present embodiment, the thickness range of described back of the body passivation layer is 1nm ~ 100nm, comprises endpoint value; More preferred scheme is the thickness range of back of the body passivation layer is 10-40nm.And, under the prerequisite not increasing production cost, in line with the principle optimizing battery performance, the back of the body passivation layer in the present embodiment adopts the degree of freedom of single layer structure or laminated construction larger, and concrete scheme is back of the body passivation layer is single layer structure or the laminated construction comprising at least double-layer films.Because back of the body passivation layer itself requires that electrical insulation capability is higher, so in the present embodiment, the formation material of back of the body passivation layer can be dielectric material, dielectric material is the insulator of electricity, its resistivity is very high, dielectric constant is large, and concrete selection scheme is the single layer structure of alumina layer, silicon oxide layer, silicon nitride layer or silicon oxynitride layer formation or comprises at least two-layer laminated construction; The formation material of back of the body passivation layer also can be intrinsic material, and the charge carrier of intrinsic material is little, and electrical insulation capability is better.
(7) print respectively front electrode silver slurry form positive electrode and dry, printed back electrode silver aluminium paste forms back electrode drying, sintering forms electrode ohmic contact and namely to complete the full aluminized emitter solar cell of this N-type.
The surface deviating from described N type semiconductor substrate side at the antireflection layer of described N type semiconductor substrate front surface forms positive electrode, dries described positive electrode.Positive electrode adopts silk-screen printing technique to be made into grating structure usually, the secondary grid line be parallel to each other by many and many main gate line be parallel to each other are formed, secondary grid line is mutually vertical with main gate line, the Main Function of positive electrode is the electric current collecting battery front side, in addition the width of main gate line and the width of welding rod basically identical, for connecting welding rod, make multi-disc serial battery; The formation material of positive electrode is generally silver slurry, and in sintering process, silver slurry penetrates antireflection layer and n
+doped layer is formed in electrical contact with the silicon chip as N type semiconductor substrate.
The surface deviating from described N type semiconductor substrate side at described back of the body passivation layer forms back electrode, dries described back electrode.Back electrode also can adopt silk-screen printing technique printing, is made into grating structure, and the secondary grid line be parallel to each other by many and many main gate line be parallel to each other are formed, and secondary grid line and main gate line are mutually vertical.Back electrode adopts silver-colored aluminium paste to be formed, and in the process of follow-up sintering, silver-colored aluminium paste can penetrate back of the body passivation layer, and is formed in electrical contact as the silicon chip of N type semiconductor substrate and aluminized emitter; The width of back electrode main gate line and the width of welding rod basically identical, to weld with welding rod other battery of connecting in cell assembling processes, the electric current collected by self is exported.
The composition of the silver-colored aluminum slurry that back electrode is used and weight percent ranges are: the additive of the silver powder of 65-95%, the aluminium powder of 0.2-10%, the glass dust of 0.5-25%, the organic carrier of 4-30% and 0.1-5%.Composition and the weight percent ranges of the silver-colored aluminum slurry used in this example are: the silver powder of 81%, the aluminium powder of 2%, the glass dust of 10%, the organic carrier of 6.5% and 0.5% additive, additive uses as viscosity modifier.
To having dried described positive electrode, the semiconductor of back electrode sintered, and sintering condition is: sintering temperature peak value 800-1000 DEG C, sintering time 30s-5min; Sintering temperature peak value used in the present embodiment is 850 DEG C, and sintering time is 1 min; Namely the making of the full aluminized emitter solar cell of described N-type is completed.The effect of sintering is that the positive electrode of printing and back electrode metal paste are combined with the silicon chip as N type semiconductor substrate, forms ohmic contact, reaches the object reducing positive electrode and back electrode and the silicon chip contact resistance as N type semiconductor substrate.
Solar cell provided by the invention is transparent owing to carrying on the back passivation layer, therefore the structure of this solar cell exposes the back side of the semi-conductor silicon chip that N type semiconductor substrate adopts, therefore this solar cell can be made into double-side cell, the back side of the semi-conductor silicon chip come out is enable to accept illumination, add the Energy transmission of battery, thus improve the conversion efficiency of the full aluminized emitter solar cell of N-type.
Embodiment two
Based on the present embodiment one, present embodiments provide the full aluminized emitter solar cell of a kind of N-type, as shown in Fig. 2, the full aluminized emitter solar cell of this N-type comprises:
N type semiconductor substrate 300;
Cover the n in described N type semiconductor substrate 300 front
+doped layer 301;
Cover described n
+doped layer 301 deviates from the antireflection layer 302 on the surface, side in described N type semiconductor substrate 300 front;
Be positioned at described N type semiconductor substrate 300 back side and cover the aluminized emitter 304 at whole N type semiconductor substrate 300 back side;
Cover described aluminized emitter 304 and deviate from back of the body passivation layer 307 on the surface, side at described N type semiconductor substrate 300 back side, wherein carry on the back the thickness of passivation layer 307 to be 1nm ~ 100nm and to be the double-decker of alumina layer and silicon nitride layer, and described alumina layer is between described silicon nitride layer and described aluminized emitter 304;
Be positioned at the positive electrode 305 in N type semiconductor substrate 300 front and be positioned at the back electrode 306 at N type semiconductor substrate 300 back side.
From saving raw material, the angle reduced costs is set out, and on the basis ensureing the abundant passivation back side of back of the body passivation layer 307, the thickness of back of the body passivation layer 307 does not need too large, and the thickness range of described back of the body passivation layer 307 is 1nm ~ 100nm, comprises endpoint value; More preferred scheme is the thickness range of back of the body passivation layer 307 is 10-40nm.And carrying on the back passivation layer 307 can be single layer structure or the laminated construction comprising at least double-layer films.
The N-type that the present embodiment provides full aluminized emitter solar cell has the following advantages relative to prior art: (1) full aluminized emitter design prevents the local aluminum emitters on back side of traditional aluminized emitter battery and back silver electrode interface place to form the problem of leakage current; (2) full aluminized emitter design is amassed emitter relative to traditional non-fully back side and is added effective PN junction area, improves the energy conversion efficiency of solar cell; (3) carry on the back the back side of passivation layer to semiconductor and there is passivation, reduce the recombination rate of minority carrier at battery lower surface, the dangling bonds of bonding silicon chip back surface and inside, the back side, repair lattice defect, the complex centre of silicon chip back side is reduced, thus increase the back side carrier life-span, effectively reduce the loss of battery open circuit voltage and short circuit current, improve the conversion efficiency of battery; (4) back-etching falls aluminium paste, and preparation back of the body passivation layer, usual back of the body passivation layer is transparent, this structure exposes the back side of the semi-conductor silicon chip that N type semiconductor substrate adopts, therefore this solar cell can be made into double-side cell, enable the back side of the semi-conductor silicon chip come out accept illumination, add the Energy transmission of battery, thus improve the conversion efficiency of solar cell.
The weight percentage sum of composition mentioned in the present invention is all 100%.
Although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (11)
1. a manufacture method for the full aluminized emitter solar cell of N-type, is characterized in that: the step of this manufacture method is as follows:
(1) N type semiconductor substrate is provided, surface damage layer and preparation table velvet face are removed to described N type semiconductor substrate;
(2) phosphorus is adopted to diffuse to form n at described N type semiconductor substrate surface
+doped layer, and etching removes the n at edge and the back side
+doped layer;
(3) at n
+antireflection layer is prepared on the surface in the side that doped layer deviates from N type semiconductor substrate face;
(4) printing covers the back side aluminium paste of the whole back surface of N type semiconductor substrate, and sintering makes the back surface of described N type semiconductor substrate form gross area aluminized emitter;
(5) back-etching of N type semiconductor substrate removes aluminium paste, surplus aluminized emitter;
(6) side deviating from described N type semiconductor substrate back at aluminized emitter prepares back of the body passivation layer on the surface;
(7) print respectively front electrode silver slurry form positive electrode and dry, printed back electrode silver aluminium paste forms back electrode drying, sintering forms electrode ohmic contact and namely to complete the full aluminized emitter solar cell of this N-type.
2. the manufacture method of the full aluminized emitter solar cell of N-type according to claim 1, is characterized in that: composition and the weight percentage of the back side aluminium paste aluminum slurry used in described step (4) are: the aluminium powder of 60-80%, the organic carrier of 15-30%, the glass dust of 0.5-8% and the additive of 0.1-5%.
3. the manufacture method of the full aluminized emitter solar cell of N-type according to claim 1, it is characterized in that: the sintering temperature peak value in described step (4) is 300-900 DEG C, sintering time is 15s-10min.
4. the manufacture method of the full aluminized emitter solar cell of N-type according to claim 3, it is characterized in that: the sintering temperature peak value in described step (4) is 600-850 DEG C, sintering time is 40s-2min.
5. the manufacture method of the full aluminized emitter solar cell of N-type according to claim 1, is characterized in that: the antireflection layer in described step (3) is silicon nitride layer, in indium tin oxide layer, zinc oxide film, silicon oxide layer, alumina layer, hydrogenated amorphous silicon layer, hydrogenated microcrystalline silicon, hydrogenated amorphous silicon carbide layer any one or comprise two or more combination layer of silicon nitride layer.
6. the manufacture method of the full aluminized emitter solar cell of N-type according to claim 1, is characterized in that: the back of the body passivation layer in described step (6) is the single layer structure of alumina layer, silicon oxide layer, silicon nitride layer or silicon oxynitride layer formation or comprises at least two-layer laminated construction.
7. the manufacture method of the full aluminized emitter solar cell of N-type according to claim 1, is characterized in that: composition and the weight percentage of the back electrode silver aluminium paste in described step (7) are: the additive of the silver powder of 65-95%, the aluminium powder of 0.2-10%, the glass dust of 0.5-25%, the organic carrier of 4-30% and 0.1-5%.
8. the manufacture method of the full aluminized emitter solar cell of N-type according to claim 1, it is characterized in that: sintering temperature peak value used in described step (7) is 800-1000 DEG C, sintering time is 30s-5min.
9. the manufacture method of the full aluminized emitter solar cell of N-type according to claim 1, is characterized in that: N type semiconductor substrate used in described step (1) is monocrystalline silicon piece or polysilicon chip.
10. solar cell prepared by the manufacture method according to any one of claim 1-9, is characterized in that:
This solar cell comprises N type semiconductor substrate (300);
Cover the n in described N type semiconductor substrate (300) front
+doped layer (301);
Cover described n
+doped layer (301) deviates from the antireflection layer (302) on the surface, side in described N type semiconductor substrate (300) front;
Be positioned at described N type semiconductor substrate (300) back side and cover the aluminized emitter (304) at whole N type semiconductor substrate (300) back side;
Cover described aluminized emitter (304) and deviate from back of the body passivation layer (307) on the surface, side at described N type semiconductor substrate (300) back side;
Be positioned at the positive electrode (305) in N type semiconductor substrate (300) front and be positioned at the back electrode (306) at N type semiconductor substrate (300) back side.
11. solar cells according to claim 10, it is characterized in that: the thickness of described back of the body passivation layer (307) is 1nm ~ 100nm and is the double-decker of alumina layer and silicon nitride layer, and described alumina layer is positioned between described silicon nitride layer and described aluminized emitter (304).
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