CN106971770B - Carry on the back alum gate line printing slurry and preparation method thereof and solar battery - Google Patents
Carry on the back alum gate line printing slurry and preparation method thereof and solar battery Download PDFInfo
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- CN106971770B CN106971770B CN201710122959.6A CN201710122959A CN106971770B CN 106971770 B CN106971770 B CN 106971770B CN 201710122959 A CN201710122959 A CN 201710122959A CN 106971770 B CN106971770 B CN 106971770B
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- 229940037003 alum Drugs 0.000 title claims abstract description 81
- 238000007639 printing Methods 0.000 title claims abstract description 37
- 239000002002 slurry Substances 0.000 title claims abstract description 31
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 238000007613 slurry method Methods 0.000 title description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 115
- 239000000843 powder Substances 0.000 claims abstract description 87
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 85
- 239000004411 aluminium Substances 0.000 claims abstract description 80
- 239000011521 glass Substances 0.000 claims abstract description 40
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Inorganic materials [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 claims abstract description 16
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims abstract description 12
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims abstract description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 12
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims abstract description 12
- VTYYLEPIZMXCLO-UHFFFAOYSA-L calcium carbonate Substances [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims abstract description 12
- 229910000019 calcium carbonate Inorganic materials 0.000 claims abstract description 12
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 12
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 12
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 12
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 12
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 19
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 19
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000006185 dispersion Substances 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004615 ingredient Substances 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 230000005684 electric field Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000654 additive Substances 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- FGRBYDKOBBBPOI-UHFFFAOYSA-N 10,10-dioxo-2-[4-(N-phenylanilino)phenyl]thioxanthen-9-one Chemical compound O=C1c2ccccc2S(=O)(=O)c2ccc(cc12)-c1ccc(cc1)N(c1ccccc1)c1ccccc1 FGRBYDKOBBBPOI-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0684—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells double emitter cells, e.g. bifacial solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- General Physics & Mathematics (AREA)
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- Sustainable Energy (AREA)
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Abstract
The invention discloses a kind of back alum gate line printing slurries and preparation method thereof, comprising: 75-95 parts of aluminium powder, 2-8 parts of lead-free glass powder, 5-23 parts of organic carrier;Wherein, aluminium powder is purity > 99.0%, 1-5 μm of ball aluminum powder；Organic carrier contains 20-75% butyl carbitol and 25-80% butyl carbitol acetate；Lead-free glass powder includes: ZnO 20-60%, Bi2O310-45%, H2B2O410-30%, BaCO315-20%, SiO20.5-3.5%, CaCO30.5-3%, Al2O30.5-2.5%, MoO 1-8%, BeO 1-5%.Using the present invention, the slurry both viscosity with higher so that the alum gate line that printing obtains has good depth-width ratio, and can reduce the resistance of battery, improve the photoelectric conversion efficiency of battery.
Description
Technical field
The present invention relates to area of solar cell more particularly to a kind of back alum gate line printing slurry and above-mentioned back aluminium
The grid line printing preparation method of slurry, using solar battery made of above-mentioned back alum gate line printing slurry.
Background technique
Solar cell power generation is that solar energy is converted into electric energy using solar battery, since it is green ring
Product is protected, environmental pollution will not be caused, and be renewable resource, so in the case of current energy shortage, solar-electricity
Pond is a kind of new energy for having broad based growth future.
Along with shooting up for solar photovoltaic industry, the demand to electric slurry will also increase sharply, especially high
The thick-film electronic aluminium paste of warm slug type is the main slurry that current electrode of solar battery uses, and the following thick-film electronic slurry produces
The market demand of product will be growing.
Aluminium paste is made of aluminium powder, glass powder, organic bond and additive etc..Wherein aluminium powder is conductive phase, organic viscous
Mixture makes the solid powders such as the aluminium powder in aluminium paste, glass powder, additive be uniformly dispersed, glass powder is as nothing as a kind of carrier
Machine adhesive softens and is melted under firing temperature, so that aluminium layer and silicon wafer is had sufficiently strong adhesion-tight degree, forms good Europe
Nurse contact.In the manufacturing process of conventional solar battery, when printing, makes aluminium paste slurry be spread evenly across silicon chip back side, and guarantees
Aluminium powder and glass powder are attached on silicon wafer after dry and do not fall off, be carbonized after sintering, leave glass by the consistency of print thickness
Glass powder bonds aluminium film and silicon substrate.Preferable organic adhesive composition will not only have the solid powder ingredient in aluminium paste
Good dispersibility, and in printing process there can be no sticky net, figure is imperfect, in uneven thickness phenomena such as, after dry
The adhesion strength for needing that there is solid powder.
With the research and development and volume production of high performance solar batteries, the requirement to aluminium paste function is also constantly changing.Applicant grinds
The p-type PERC double-sided solar battery for having sent out a kind of brand new replaces the complete of conventional solar battery with back alum gate line printing
Back surface field printing, makes the back side of solar battery that can also receive the energy of sunlight, improves the whole photoelectric conversion efficiency of battery.
Back alum gate line printing for p-type PERC double-side cell, needs aluminium paste to have higher viscosity, so that alum gate line has good height
Wide ratio improves battery to the absorptivity of sunlight.Since the area that alum gate is contacted with cell backside is less, battery certainly will be increased
Resistance influences the photoelectric conversion efficiency of battery.Therefore, it is necessary to research and develop a kind of back alum gate that suitable p-type PERC double-side cell uses
Line aluminium paste.
Summary of the invention
Technical problem to be solved by the present invention lies in, a kind of back alum gate line printing slurry is provided, it is both with higher
Viscosity so that the alum gate line that printing obtains has good depth-width ratio, and can reduce the resistance of battery, improve the photoelectricity of battery
Transfer efficiency.
The technical problems to be solved by the invention also reside in, and provide a kind of preparation side of above-mentioned back alum gate line printing slurry
Method.
The technical problems to be solved by the invention also reside in, and provide a kind of above-mentioned back alum gate line printing of use and are made of slurry
P-type PERC double-sided solar battery.
In order to solve the above-mentioned technical problems, the present invention provides a kind of back alum gate line printing slurries, by following with weight
The raw material of amount part meter is made:
75-95 parts of aluminium powder, 2-8 parts of lead-free glass powder, 5-23 parts of organic carrier；
Wherein, the aluminium powder is purity > 99.0%, 1-5 μm of ball aluminum powder；
The organic carrier contains 20-75% butyl carbitol and 25-80% butyl carbitol acetate；
The lead-free glass powder includes: ZnO 20-60%, Bi2O310-45%, H2B2O410-30%, BaCO3 15-
20%, SiO20.5-3.5%, CaCO30.5-3%, Al2O30.5-2.5%, MoO 1-8%, BeO 1-5%；
The viscosity of the slurry is 40~120Pa.s.
As the preferred embodiment of above scheme, the organic carrier contains 30-65% butyl carbitol and 35-70% butyl
Carbitol acetate；
The lead-free glass powder includes: ZnO 20-50%, Bi2O310-40%, H2B2O410-25%, BaCO3 15-
18%, SiO20.5-3%, CaCO30.5-2%, Al2O30.5-2%, MoO 1-5%, BeO 1-3%.
As the preferred embodiment of above scheme, the aluminium powder is purity > 99.9%, 1-3 μm of ball aluminum powder.As upper
The preferred embodiment of scheme is stated, the viscosity of the slurry is 80~120Pa.s.
A kind of back alum gate line printing preparation method of slurry, comprising:
Lead-free glass powder and aluminium powder are added in organic carrier by formula, and with dispensing implement with 500-1000rpm points
It dissipates and continues 1-3h；
Mixed liquor after dispersion is rolled to fineness≤20 μm with grinder, the aluminium paste that viscosity is 40~120Pa.s.
Correspondingly, invention additionally discloses a kind of p-type PERC double-sided solar battery, including carry on the back silver-colored main grid, alum gate line, the back side
Passivation layer, P-type silicon, N-type emitter, front passivation layer and positive silver electrode, the backside passivation layer are formed after laser slotting
At least 1 group of laser slotting unit is arranged in each laser slotting area for several laser slotting areas disposed in parallel；Alum gate line and swash
Light slotted zones are arranged in a one-to-one correspondence, and the alum gate line is connected by laser slotting area with P-type silicon, the alum gate line and the silver-colored main grid of back
Vertical connection；
The alum gate line is made of the described in any item slurries of claim 1-4.
As the preferred embodiment of above scheme, the alum gate line is parallel with laser slotting area,
At least 2 groups of laser slotting units, two adjacent groups laser slotting list disposed in parallel are set in each laser slotting area
Spacing between member is 5-300 μm；
The width in the laser slotting area is 10-500 μm；The width of alum gate line below laser slotting area, which is greater than, to swash
The width of light slotted zones, the width of alum gate line are 30-550 μm.
As the preferred embodiment of above scheme, the alum gate line is vertical with laser slotting area,
Spacing between the laser slotting unit is 0.5-50mm.
As the preferred embodiment of above scheme, the pattern of the laser slotting unit is lines, circle, ellipse, triangle
It is shape, quadrangle, pentagon, hexagon, cross or star-shaped.
As the preferred embodiment of above scheme, the pattern of the laser slotting unit is a continuous straight line or multiple lines
The dotted line of Duan Zucheng；
When the pattern of the laser slotting unit is the dotted line of multiple line segments composition, the length of the line segment is identical or not
Together.
The invention has the following beneficial effects:
Aluminium paste of the invention by three kinds of material compositions, by adjusting aluminium powder, lead-free glass powder and organic carrier it is specific at
Point and raw material proportioning, obtain higher viscosity, so that the obtained alum gate line of printing has good depth-width ratio, silicon wafer generation is stuck up
Bent degree is extremely low, facilitates printing alum gate line, improves printing quality, reduces printing difficulty and bad product rate.Moreover, it also has
Excellent ohm contact performance reduces the resistance of battery, improves the photoelectric conversion efficiency of battery.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of p-type PERC double-sided solar battery；
Fig. 2 is the structure schematic diagram of p-type PERC double-sided solar battery.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, the present invention is made into one below in conjunction with attached drawing
Step ground detailed description.
Applicant has developed a kind of completely new p-type PERC double-sided solar battery, is replaced with back alum gate line printing conventional
The full back surface field of solar battery is printed, and is made the back side of solar battery that can also receive the energy of sunlight, is improved the whole of battery
Body photoelectric conversion efficiency.But the back alum gate line of p-type PERC double-side cell is printed, it needs aluminium paste to have higher viscosity, makes
Obtaining alum gate line has good depth-width ratio, improves battery to the absorptivity of sunlight.The face contacted due to alum gate with cell backside
Product is less, certainly will increase the resistance of battery, influence the photoelectric conversion efficiency of battery.Therefore, it is necessary to research and develop a kind of suitable p-type PERC
The back alum gate line aluminium paste that double-side cell uses, existing aluminium paste are not able to satisfy its requirement.
For this purpose, being made the present invention provides a kind of back alum gate line printing slurry of following raw materials in parts by weight:
75-95 parts of aluminium powder, 2-8 parts of lead-free glass powder, 5-23 parts of organic carrier.
Wherein, the aluminium powder is purity > 99.0%, 1-5 μm of ball aluminum powder.Aluminium powder has micron-sized partial size, can
To be the mixture of the aluminium powder with two or more different-grain diameters.Preferably, the aluminium powder includes 1-2 μm of 10-20%
Ball aluminum powder, 4-5 μm of the ball aluminum powder of 30-50% and remaining 2-4 μm of ball aluminum powder, the ball aluminum powder of different-grain diameter are mixed
Collocation is closed, impressionability and physical attachment intensity can be improved, and reduces the internal resistance (intrinsic resistance) of electrode simultaneously.
The organic carrier contains 20-75% butyl carbitol and 25-80% butyl carbitol acetate.Existing aluminium paste
Organic carrier uses the mixture of many kinds of substance composition, but the present invention is not suitable for using existing organic carrier formula, otherwise
The viscosity that will affect aluminium paste causes alum gate width too wide, and shading-area is too big, and the photoelectric conversion efficiency of battery is low.
The lead-free glass powder includes: ZnO 20-60%, Bi2O310-45%, H2B2O410-30%, BaCO3 15-
20%, SiO20.5-3.5%, CaCO30.5-3%, Al2O30.5-2.5%, MoO 1-8%, BeO 1-5%.Existing aluminium paste
Lead-free glass powder generally only contains 2-5 kind ingredient, but lead-free glass powder of the invention contains 9 kinds of ingredients, can be effective
Cooperate well with above-mentioned specific organic carrier and aluminium powder, three generates synergistic effect, so that the viscosity of slurry finished product reaches
40~120Pa.s obtains higher viscosity, so that the alum gate line that printing obtains has good depth-width ratio, facilitates printing aluminium
Grid line improves printing quality, reduces printing difficulty and bad product rate.Moreover, it also has excellent ohm contact performance, reduce
The resistance of battery improves the photoelectric conversion efficiency of battery.
More preferably, the organic carrier contains 30-65% butyl carbitol and 35-70% butyl carbitol acetate；Institute
Stating lead-free glass powder includes: ZnO 20-50%, Bi2O310-40%, H2B2O410-25%, BaCO315-18%, SiO20.5-
3%, CaCO30.5-2%, Al2O30.5-2%, MoO 1-5%, BeO 1-3%；The aluminium powder be purity > 99.9%, 1-3 μm
Ball aluminum powder；The viscosity of the slurry is 80~120Pa.s.The aluminium powder includes 1-1.5 μm of the spherical aluminum of 10-20%
2-3 μm of the ball aluminum powder and remaining 1.5-2 μm of ball aluminum powder of powder, 30-50%.
It should be noted that above-mentioned % refers to weight percent.
Correspondingly, the present invention also provides a kind of preparation methods for carrying on the back alum gate line printing slurry, comprising:
Lead-free glass powder and aluminium powder are added in organic carrier by formula, and with dispensing implement with 500-1000rpm points
It dissipates and continues 1-3h；
Mixed liquor after dispersion is rolled to fineness≤20 μm with grinder, the aluminium paste that viscosity is 40~120Pa.s.
Correspondingly, the present invention also provides a kind of p-type PERC double-sided solar batteries using above-mentioned back electrode structure, specifically
As shown in Figure 1, including carrying on the back silver-colored main grid 1, alum gate line 2, backside passivation layer, P-type silicon 5, N-type emitter 6, front passivation layer 7 and just
Silver electrode 8, wherein the backside passivation layer includes back side silicon nitride 3, backside oxide aluminium film 4, and front passivation layer 7 can be
Front side silicon nitride film, but not limited to this.
It is disposed in parallel that the back side silicon nitride 3 and backside oxide aluminium film 4 form 30-500 group after laser slotting
1-50 group laser slotting unit is arranged in each laser slotting area for laser slotting area 9；Alum gate line 2 and laser slotting area 9 one are a pair of
It should be arranged, the alum gate line 2 is connected by laser slotting area 9 with P-type silicon 5；Main grid 1 is vertical connect with back silver for the alum gate line 2.
The present invention improves existing single side PERC solar battery, no longer be equipped with full aluminum back electric field, but by its
Become many alum gate lines 2, is opened using laser is opened up in laser slotting technology overleaf silicon nitride film 3 and backside oxide aluminium film 4
Slot area 9, and alum gate line 2 is printed in these laser slotting areas 9 disposed in parallel, so as to form localized contact with P-type silicon 5,
The alum gate line 2 of intensive parallel arrangement, which can not only play, improves open-circuit voltage Voc and short circuit current Jsc, and it is multiple to reduce minority carrier
Conjunction rate improves the effect of cell photoelectric transfer efficiency, the full aluminum back electric field of alternative existing single side battery structure, and alum gate line
2 do not cover the back side of silicon wafer comprehensively, and sunlight can be projected in silicon wafer between alum gate line 2, to realize that silicon chip back side is inhaled
Luminous energy is received, the photoelectric conversion efficiency of battery is greatly improved.
Above-mentioned alum gate line 2 is made of above-mentioned slurry, and technical detail is same as above, and details are not described herein.Using above-mentioned
The alum gate line of slurry printed back facilitates printing alum gate line, improves so that the alum gate line that printing obtains has good depth-width ratio
Printing quality reduces printing difficulty and bad product rate.Moreover, it also has excellent ohm contact performance, the electricity of battery is reduced
Resistance, improves the photoelectric conversion efficiency of battery.
Preferably, the radical of the alum gate line 2 is corresponding with the number in laser slotting area, is all 30-500 item, more preferably, institute
The radical for stating alum gate line 2 is 80-220 item.
It is illustrated in figure 2 silicon chip back side, alum gate line 2 and the perpendicular connection of the silver-colored main grid 1 of back, wherein it is continuous for carrying on the back silver-colored main grid 1
Straight grid, since back side silicon nitride 3 and backside oxide aluminium film 4 are equipped with laser slotting area 9, when printing aluminium paste forms alum gate line 2, aluminium
Slurry filling is to laser slotting area 9 so that alum gate line 2 and P-type silicon 5 form localized contact, can by electron-transport to alum gate line 2, with
The silver-colored main grid 1 of the back that alum gate line 2 intersects then collects the electronics on alum gate line 2, it follows that alum gate line 2 of the present invention is played and mentioned
High open circuit voltage Voc and short circuit current Jsc reduces minority carrier recombination rate, and the effect of transmission electronics, alternative existing
Full aluminum back electric field in single side solar battery not only reduces the dosage of silver paste and aluminium paste, reduces production cost, and realize two-sided
Luminous energy is absorbed, the application range of solar battery is significantly expanded and improves photoelectric conversion efficiency.
The alum gate line can be parallel with laser slotting area, be also possible to vertical.
When alum gate line is parallel with laser slotting area, 2 groups of setting or more laser slotting units in laser slotting area, adjacent two
Spacing between group laser slotting unit disposed in parallel is 5-300 μm.
The width in laser slotting area 9 of the present invention is 10-500 μm；Alum gate line 2 positioned at laser slotting area 9 lower section
Width is greater than the width in laser slotting area 9, and the width of alum gate line 2 is 30-550 μm.Plurality is selected in above-mentioned 2 width of alum gate line
Such as 500 μm of value, and multiple groups laser slotting area 9 can be located at side by side same by the selection of 9 width of laser slotting area compared with such as 40 μm of fractional value
On alum gate line 2, guarantee that alum gate line 2 and P-type silicon 5 there are enough contacts area.
When alum gate line is vertical with laser slotting area, the spacing between the laser slotting unit is 0.5-50mm.
Further, every group of laser slotting unit includes at least one laser slotting unit, the pattern of the laser slotting unit
For lines, circle, ellipse, triangle, quadrangle, pentagon, hexagon, cross or star-shaped.Preferably, the laser is opened
The pattern of slot unit is the dotted line that a continuous straight line or multiple line segments form；When the pattern of the laser slotting unit is more
When the dotted line of a line segment composition, the length of the line segment is identical or different.
It should be noted that the alum gate line in addition to can be linear, can also be curved shape, arc or waveform,
Embodiments thereof are not limited to illustrated embodiment of the present invention.
Therefore, p-type PERC double-sided solar battery of the present invention, which changes, is equipped with a plurality of alum gate line 2 disposed in parallel, no
It only substitutes full aluminum back electric field in existing single side solar battery and realizes back side extinction, be also used to carry on the back the secondary grid structure in silver electrode and use
Make conduction electronics.P-type PERCP type PERC double-sided solar battery of the present invention is made, the dosage of silver paste and aluminium paste can be saved,
Reduction is produced into sheet, and realizes two-sided absorption luminous energy, is significantly expanded the application range of solar battery and improves photoelectric conversion
Efficiency.
Below with specific embodiment the present invention is further explained embodiment 1
Formula: 75 parts of aluminium powder, 2 parts of lead-free glass powder, 23 parts of organic carrier；
Wherein, aluminium powder is purity 99.9%, 2 μm of ball aluminum powder；
Organic carrier contains 25% butyl carbitol and 75% butyl carbitol acetate；
Lead-free glass powder includes: ZnO 20%, Bi2O345%, H2B2O410%, BaCO315%, SiO23.5%,
CaCO33%, Al2O31.5%, MoO 1%, BeO 1%.
Preparation method:
Lead-free glass powder and aluminium powder are added in organic carrier by formula, and disperse to continue with 500rpm with dispensing implement
3h；
Mixed liquor after dispersion is rolled to fineness≤20 μm with grinder, the aluminium paste that viscosity is 60Pa.s.
Embodiment 2
Formula: 80 parts of aluminium powder, 5 parts of lead-free glass powder, 15 parts of organic carrier；
Wherein, 12% 1-2 μm of ball aluminum powder, 40% 4-5 μm of ball aluminum powder and 48% 2-4 μm of spherical shape
Aluminium powder；
Organic carrier contains 50% butyl carbitol and 50% butyl carbitol acetate；
Lead-free glass powder includes: ZnO 30%, Bi2O330%, H2B2O414%, BaCO318%, SiO23%,
CaCO32%, Al2O31%, MoO 1%, BeO 1%.
Preparation method:
Lead-free glass powder and aluminium powder are added in organic carrier by formula, and disperse to continue with 600rpm with dispensing implement
2h；
Mixed liquor after dispersion is rolled to fineness≤20 μm with grinder, the aluminium paste that viscosity is 95Pa.s.
Embodiment 3
Formula: 85 parts of aluminium powder, 8 parts of lead-free glass powder, 7 parts of organic carrier；
Wherein, 1-1.5 μm of ball aluminum powder, 45% 4-5 μm of ball aluminum powder and 40% 2-4 that aluminium powder is 15%
μm ball aluminum powder；
Organic carrier contains 60% butyl carbitol and 40% butyl carbitol acetate；
Lead-free glass powder includes: ZnO 60%, Bi2O310%, H2B2O410%, BaCO315%, SiO21%,
CaCO31%, Al2O31%, MoO 1%, BeO 1%.
Preparation method:
Lead-free glass powder and aluminium powder are added in organic carrier by formula, and disperse to continue with 700rpm with dispensing implement
3h；
Mixed liquor after dispersion is rolled to fineness≤20 μm with grinder, the aluminium paste that viscosity is 90Pa.s.
Embodiment 4
Formula: 90 parts of aluminium powder, 5 parts of lead-free glass powder, 5 parts of organic carrier；
Wherein, 1-1.5 μm of ball aluminum powder, 50% 4-5 μm of ball aluminum powder and 30% 2-4 that aluminium powder is 20%
μm ball aluminum powder；
Organic carrier contains 30% butyl carbitol and 70% butyl carbitol acetate；
Lead-free glass powder includes: ZnO 25%, Bi2O330%, H2B2O420%, BaCO315%, SiO20.5%,
CaCO30.5%, Al2O30.5%, MoO 5.5%, BeO 3%.
Preparation method:
Lead-free glass powder and aluminium powder are added in organic carrier by formula, and disperse to continue with 800rpm with dispensing implement
2h；
Mixed liquor after dispersion is rolled to fineness≤20 μm with grinder, the aluminium paste that viscosity is 105Pa.s.
Embodiment 5
Formula: 90 parts of aluminium powder, 2 parts of lead-free glass powder, 8 parts of organic carrier；
Wherein, 1-1.5 μm of ball aluminum powder, 50% 4-5 μm of ball aluminum powder and 36% 2-4 that aluminium powder is 14%
μm ball aluminum powder；
Organic carrier contains 40% butyl carbitol and 60% butyl carbitol acetate；
Lead-free glass powder includes: ZnO 30%, Bi2O315%, H2B2O430%, BaCO320%, SiO20.5%,
CaCO30.5%, Al2O32%, MoO 1%, BeO 1%.
Preparation method:
Lead-free glass powder and aluminium powder are added in organic carrier by formula, and disperse to continue with 900rpm with dispensing implement
3h；
Mixed liquor after dispersion is rolled to fineness≤20 μm with grinder, the aluminium paste that viscosity is 110Pa.s.
Embodiment 6
Formula: 80 parts of aluminium powder, 6 parts of lead-free glass powder, 14 parts of organic carrier；
Wherein, 1-1.5 μm of ball aluminum powder, 40% 4-5 μm of ball aluminum powder and 45% 2-4 that aluminium powder is 15%
μm ball aluminum powder；
Organic carrier contains 75% butyl carbitol and 25% butyl carbitol acetate；
Lead-free glass powder includes: ZnO50%, Bi2O312%, H2B2O412%, BaCO315%, SiO22%, CaCO32%,
Al2O32%, MoO 2%, BeO 3%.
Preparation method:
Lead-free glass powder and aluminium powder are added in organic carrier by formula, and held with dispensing implement with 1000rpm dispersion
Continuous 3h；
Mixed liquor after dispersion is rolled to fineness≤20 μm with grinder, the aluminium paste that viscosity is 120Pa.s.
The resulting slurry of embodiment 1-6 is applied in the preparation of solar battery, and solar battery pas technology is examined
Analysis is surveyed, as a result as follows:
Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention rather than protects to the present invention
The limitation of range is protected, although the invention is described in detail with reference to the preferred embodiments, those skilled in the art should
Understand, it can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from the essence of technical solution of the present invention
And range.
Claims (8)
1. a kind of back alum gate line printing slurry, which is characterized in that it is made of following raw materials in parts by weight:
75-95 parts of aluminium powder, 2-8 parts of lead-free glass powder, 5-23 parts of organic carrier；
Wherein, the aluminium powder is purity > 99.0%, 1-5 μm of ball aluminum powder；
The organic carrier is made of 30-65% butyl carbitol and 35-70% butyl carbitol acetate；
The ingredient of the lead-free glass powder are as follows: ZnO 20-50%, Bi2O310-40%, H2B2O410-25%, BaCO3 15-
18%, SiO20.5-3%, CaCO30.5-2%, Al2O30.5-2%, MoO 1-5%, BeO 1-3%；
The viscosity of the slurry is 80~120Pa.s；
The aluminium powder includes 1-2 μm of the ball aluminum powder of 10-20%, 4-5 μm of the ball aluminum powder of 30-50% and remainder 2-4 μ
The ball aluminum powder of m.
2. back alum gate line printing slurry as described in claim 1, which is characterized in that the aluminium powder is the ball of purity > 99.9%
Shape aluminium powder.
3. a kind of preparation method carried on the back the printing of alum gate line as described in claim 1-2 and use slurry characterized by comprising
Lead-free glass powder and aluminium powder are added in organic carrier by formula, and held with dispensing implement with 500-1000rpm dispersion
Continuous 1-3h；
Mixed liquor after dispersion is rolled to fineness≤20 μm with grinder, the aluminium paste that viscosity is 80~120Pa.s.
4. a kind of p-type PERC double-sided solar battery, which is characterized in that including carrying on the back silver-colored main grid, alum gate line, backside passivation layer, p-type
Silicon, N-type emitter, front passivation layer and positive silver electrode, it is parallel that the backside passivation layer forms several after laser slotting
At least 1 group of laser slotting unit is arranged in each laser slotting area for the laser slotting area of setting；Alum gate line and laser slotting area one
One is correspondingly arranged, and the alum gate line is connected by laser slotting area with P-type silicon, the alum gate line with carry on the back that silver-colored main grid is vertical connect；
The alum gate line is made of the described in any item slurries of claim 1-2.
5. p-type PERC double-sided solar battery as claimed in claim 4, which is characterized in that the alum gate line and laser slotting area
In parallel,
In each laser slotting area be arranged at least 2 groups of laser slotting units, two adjacent groups laser slotting unit disposed in parallel it
Between spacing be 5-300 μm；
The width in the laser slotting area is 10-500 μm；The width of alum gate line below laser slotting area is opened greater than laser
The width in slot area, the width of alum gate line are 30-550 μm.
6. p-type PERC double-sided solar battery as claimed in claim 5, which is characterized in that the alum gate line and laser slotting area
Vertically,
Spacing between the laser slotting unit is 0.5-50mm.
7. p-type PERC double-sided solar battery as claimed in claim 4, which is characterized in that the pattern of the laser slotting unit
For lines, circle, ellipse, triangle, quadrangle, pentagon, hexagon, cross or star-shaped.
8. p-type PERC double-sided solar battery as claimed in claim 7, which is characterized in that the pattern of the laser slotting unit
The dotted line formed for a continuous straight line or multiple line segments；
When the pattern of the laser slotting unit is the dotted line of multiple line segments composition, the length of the line segment is identical or different.
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| CN102760511A (en) * | 2012-05-28 | 2012-10-31 | 杭州正银电子材料有限公司 | Crystalline silicon solar cell BSF (back surface field) lead-free aluminum electroconductive slurry and preparation method thereof |
| CN102881351A (en) * | 2012-09-26 | 2013-01-16 | 湖南红太阳光电科技有限公司 | Back tin electrode slurry for crystalline silicon photovoltaic cells and method for preparing back tin electrode slurry |
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| CN106328249A (en) * | 2015-06-29 | 2017-01-11 | 江苏正能电子科技有限公司 | Back passivation solar cell aluminum paste |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20160208113A1 (en) * | 2015-01-15 | 2016-07-21 | Pancolour Ink Co., Ltd | Conductive aluminum paste for lightweight solar cell and solar cell requiring the conductive aluminum paste |
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| CN102760511A (en) * | 2012-05-28 | 2012-10-31 | 杭州正银电子材料有限公司 | Crystalline silicon solar cell BSF (back surface field) lead-free aluminum electroconductive slurry and preparation method thereof |
| CN102881351A (en) * | 2012-09-26 | 2013-01-16 | 湖南红太阳光电科技有限公司 | Back tin electrode slurry for crystalline silicon photovoltaic cells and method for preparing back tin electrode slurry |
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| CN105702758A (en) * | 2016-04-14 | 2016-06-22 | 泰州中来光电科技有限公司 | Preparation method of back junction N type solar battery, back junction N type solar battery, back junction N type solar battery assembly and back junction N type solar battery system |
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