CN110459343A - A kind of full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver paste - Google Patents
A kind of full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver paste Download PDFInfo
- Publication number
- CN110459343A CN110459343A CN201910529059.2A CN201910529059A CN110459343A CN 110459343 A CN110459343 A CN 110459343A CN 201910529059 A CN201910529059 A CN 201910529059A CN 110459343 A CN110459343 A CN 110459343A
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- China
- Prior art keywords
- back side
- silver paste
- crystal silicon
- silver
- full
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 144
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 101
- 239000004332 silver Substances 0.000 title claims abstract description 101
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 58
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 58
- 239000010703 silicon Substances 0.000 title claims abstract description 58
- 239000013078 crystal Substances 0.000 title claims abstract description 52
- 238000009766 low-temperature sintering Methods 0.000 title claims abstract description 43
- 239000000843 powder Substances 0.000 claims abstract description 52
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 30
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000005245 sintering Methods 0.000 claims abstract description 29
- 239000004411 aluminium Substances 0.000 claims abstract description 28
- 238000000034 method Methods 0.000 claims abstract description 27
- 239000013008 thixotropic agent Substances 0.000 claims abstract description 6
- 239000002270 dispersing agent Substances 0.000 claims abstract description 5
- 238000001035 drying Methods 0.000 claims description 38
- 238000002161 passivation Methods 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 19
- 239000002245 particle Substances 0.000 claims description 19
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 claims description 13
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 claims description 13
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 claims description 13
- 238000002156 mixing Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- 230000003667 anti-reflective effect Effects 0.000 claims description 6
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004952 Polyamide Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229920002647 polyamide Polymers 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 239000001856 Ethyl cellulose Substances 0.000 claims description 4
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical group CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 4
- 229920001249 ethyl cellulose Polymers 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 3
- 239000004147 Sorbitan trioleate Substances 0.000 claims description 3
- PRXRUNOAOLTIEF-ADSICKODSA-N Sorbitan trioleate Chemical compound CCCCCCCC\C=C/CCCCCCCC(=O)OC[C@@H](OC(=O)CCCCCCC\C=C/CCCCCCCC)[C@H]1OC[C@H](O)[C@H]1OC(=O)CCCCCCC\C=C/CCCCCCCC PRXRUNOAOLTIEF-ADSICKODSA-N 0.000 claims description 3
- -1 alcohol ester Chemical class 0.000 claims description 3
- 235000019337 sorbitan trioleate Nutrition 0.000 claims description 3
- 229960000391 sorbitan trioleate Drugs 0.000 claims description 3
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 claims description 3
- 229910000165 zinc phosphate Inorganic materials 0.000 claims description 3
- 239000012752 auxiliary agent Substances 0.000 claims 1
- 239000013589 supplement Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 230000008569 process Effects 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 5
- 238000004587 chromatography analysis Methods 0.000 abstract description 2
- 230000005611 electricity Effects 0.000 abstract description 2
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract description 2
- 238000002360 preparation method Methods 0.000 description 13
- 150000001875 compounds Chemical class 0.000 description 10
- 239000002002 slurry Substances 0.000 description 10
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical group CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 238000001723 curing Methods 0.000 description 6
- 238000001465 metallisation Methods 0.000 description 6
- 238000007639 printing Methods 0.000 description 6
- 230000009467 reduction Effects 0.000 description 6
- 238000000576 coating method Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 3
- 239000003085 diluting agent Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 235000008216 herbs Nutrition 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- 210000002268 wool Anatomy 0.000 description 3
- ZYUVGYBAPZYKSA-UHFFFAOYSA-N 5-(3-hydroxybutan-2-yl)-4-methylbenzene-1,3-diol Chemical compound CC(O)C(C)C1=CC(O)=CC(O)=C1C ZYUVGYBAPZYKSA-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 239000004359 castor oil Substances 0.000 description 2
- 235000019438 castor oil Nutrition 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- PSXWNITXWWECNY-LPVGZGSHSA-N dTDP-4-dehydro-beta-L-rhamnose Chemical compound O[C@@H]1[C@H](O)C(=O)[C@H](C)O[C@@H]1OP(O)(=O)OP(O)(=O)OC[C@@H]1[C@@H](O)C[C@H](N2C(NC(=O)C(C)=C2)=O)O1 PSXWNITXWWECNY-LPVGZGSHSA-N 0.000 description 2
- NHADDZMCASKINP-HTRCEHHLSA-N decarboxydihydrocitrinin Natural products C1=C(O)C(C)=C2[C@H](C)[C@@H](C)OCC2=C1O NHADDZMCASKINP-HTRCEHHLSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 238000013035 low temperature curing Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- HIXDQWDOVZUNNA-UHFFFAOYSA-N 2-(3,4-dimethoxyphenyl)-5-hydroxy-7-methoxychromen-4-one Chemical compound C=1C(OC)=CC(O)=C(C(C=2)=O)C=1OC=2C1=CC=C(OC)C(OC)=C1 HIXDQWDOVZUNNA-UHFFFAOYSA-N 0.000 description 1
- HPILSDOMLLYBQF-UHFFFAOYSA-N 2-[1-(oxiran-2-ylmethoxy)butoxymethyl]oxirane Chemical compound C1OC1COC(CCC)OCC1CO1 HPILSDOMLLYBQF-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VGCXGMAHQTYDJK-UHFFFAOYSA-N Chloroacetyl chloride Chemical compound ClCC(Cl)=O VGCXGMAHQTYDJK-UHFFFAOYSA-N 0.000 description 1
- MHABMANUFPZXEB-UHFFFAOYSA-N O-demethyl-aloesaponarin I Natural products O=C1C2=CC=CC(O)=C2C(=O)C2=C1C=C(O)C(C(O)=O)=C2C MHABMANUFPZXEB-UHFFFAOYSA-N 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000006255 coating slurry Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229940113088 dimethylacetamide Drugs 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 238000000895 extractive distillation Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000005906 menstruation Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 239000002798 polar solvent Substances 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/25—Noble metals, i.e. Ag Au, Ir, Os, Pd, Pt, Rh, Ru
- B22F2301/255—Silver or gold
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2304/00—Physical aspects of the powder
- B22F2304/10—Micron size particles, i.e. above 1 micrometer up to 500 micrometer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver pastes, the silver paste mainly includes following mass fraction: 50~70 parts of nano-silver powder, 20~50 parts of organic carrier, 0.1~0.3 part of dispersing agent and 0.1~0.3 part of thixotropic agent, the nano-silver powder sintering activity that the present invention uses is good, it is easy sintering under cryogenic, and can be infiltered in the aluminium paste of the back side with part silver paste in sintering process, form preferable silver-colored aluminium contact.Low-temperature sintering type silver paste prepared by the present invention prepares rear electrode, it can be formed BSF layers complete, improve the field passive behavior of electrode zone, reduce Carrier recombination, and enter silicon substrate without silver, it will not leak electricity, reduce the leakage current of battery, improve photoelectric conversion efficiency, compared with conventional, without considering chromatography, electrode width can be reduced, cost is reduced.
Description
Technical field
The present invention relates to polymer based conducting materials fields, and in particular to a kind of full Al-BSF crystal silicon solar energy battery
With low-temperature sintering type back side silver paste.
Background technique
With the fast development of modern industry, tellurian natural energy source petroleum, coal, natural gas etc. are being gradually used up
Totally, the following energy crisis, greenhouse effects and environmental pollution are got worse, this just forces the mankind to seek alternative day
The new cleaning fuel of the right energy.The sun has been increasingly becoming effective supplier of new energy at present.Solar energy can be by the sun
Electric energy can be converted to, be in all clean energy resourcies it is minimum to solar energy conversion links, in the way of most direct.
Solar battery on the market is based on crystal silicon solar energy battery at present, and turns from technical maturity, photoelectricity
The consideration such as efficiency and raw material sources is changed, the object of giving priority to of photovoltaic solar cell will in a very long time from now on
It is silicon systems solar battery.Therefore how to further increase the photoelectric conversion efficiency of crystal silicon solar energy battery is that industry continues
One of constantly pursue a goal.
Al-BSF (BSF) is the typical back surface passivation structure that modern crystals silicon solar cell generallys use, and is passed through
The development of many years, the production technology of Al-BSF have gradually tended to mature, have stablized, also increasingly deepened to every research of Al-BSF,
These all show that Al-BSF still will be widely used in crystal silicon solar energy battery within significant period of time from now on, for improving
The transformation efficiency of battery has major contribution.
Therefore the preparation process flow of conventional crystal silicon solar cell is that the naked silicon wafer of raw material is cleaned system before menstruation at present
It after suede, is diffused and prepares PN junction, then etch removal PSG phosphorosilicate glass layer, after blue diaphragm is made in PECVD plating antireflective film, first
Back side silver electrode is prepared with silk-screen printing technique printed back silver paste, printed back aluminium paste prepares Al-BSF, drying after drying
After republish front side silver paste and prepare positive silver electrode, then drying and short time high temperature co-sintering form cell piece.
PERC battery is good necessary to conventional crystalline silicon battery back silver except that need to have for the requirement of the back side PERC silver paste
Except printing performance and lower silver content characteristic, should also have following several elements: (1) low activity, reduce glass powder with
The reaction of passivating film avoids silver paste and silicon wafer contact portion from forming a large amount of complex centres, improves cell piece open-circuit voltage；(2) compared with
Wide process window adapts to low temperature sintering technology；(3) outstanding adhesive force and aging adhesive force.
Chinese patent CN109659068A discloses a kind of full Al-BSF crystal silicon solar energy battery and is carried on the back with low temperature curing type
Face silver paste, the invention is by 10~20 parts of ball shape silver powder, 50~60 parts of flake silver powder, 14~30 parts of bisphenol A type epoxy resin, work
Property 5~9.6 parts of diluent, 0.77~1.18 part of curing agent dicyandiamide, 0.02~0.04 part of curing accelerator, thixotropic agents 0.2
~0.5 part.The present invention is bad using the adhesion of low temperature curing type back side silver paste printed back electrode, reduces PERC solar energy
Battery opens pressure, so that will lead to the photoelectric conversion efficiency of PERC solar battery reduces.
Summary of the invention
To solve the above-mentioned problems, the present invention provides a kind of formation that is compound, reducing aerdentalloy for reducing carrier
Full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver paste, and using the silver paste technological operation it is simple,
Suitable for existing process flow, technical scheme is as follows:
It is described the present invention provides a kind of full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver paste
Low-temperature sintering type back side silver paste includes that following components is prepared according to mass fraction:
Wherein, the tap density of the nano-silver powder is 3~3.5g/cm3, the specific surface area of the nano-silver powder is 4.8
~5.8cm2/ g, the median particle diameter D of the nano-silver powder50It is 0.05~0.5 μm, the particle size span of the nano-silver powder is 0.8
~09, the burn out rate of the nano-silver powder is 0.1~0.2%.
In the embodiment having of the invention, the low-temperature sintering type back side silver paste according to mass fraction further include 1~
10 parts of glass powder.
In the embodiment having of the invention, the glass powder is lead-free glass powder, and the softening point of the glass powder is
500~700 DEG C, the median particle diameter D of the glass powder50It is 0.3~04 μm.
In the embodiment having of the invention, the glass powder includes 60~65 parts of Bi according to mass fraction2O3、20
~30 parts of B2O3, 5~10 parts of ZnO or Zn3(PO4)2, 20~25 parts of SiO2, 1~3 part of Al2O3, 5~10 parts of NiO
With 2~5 parts of V2O5。
In the embodiment having of the invention, the organic carrier is selected from ethyl cellulose, terpinol, butyl card must
One of alcohol, acetate of butyl carbitol, alcohol ester 12 or several mixing.
In the embodiment having of the invention, the dispersing agent is selected from DMA, TDO, sorbitan trioleate, BYK-
One of 110 and BYK-111 or several mixing.
Wherein, DMA is dimethyl acetamide, and full name is n,N-dimethylacetamide (chemical formula: CH3C(O)N(CH3)2Contracting
It is written as DMAC or DMA.One kind being commonly used for aprotic polar solvent.Colourless transparent liquid, it is flammable.Can with water, alcohol, ether, ester, benzene,
The organic solvents such as chloroform and aromatic compound arbitrarily mix.For pharmacy object, synthetic resin, polyacrylonitrile spinning is also served as
The solvent and extractive distillation solvent etc. from eight fraction seperation styrene of carbon of silk.It is acted on by dimethylamine and chloroacetic chloride and is made.
TDO is a kind of special superpower wetting dispersing agent of double ion long-chain, is suitble to prepare various aqueous having with oiliness
Machine, inorganic coating slurry, have high surface, therefore have outstanding performance, migrate coating during film curing,
It is firmly adsorbed on the surface of solids, to reach ideal effect.
BYK-110 makes coating solution flocculate by steric hindrance.Due to solving flocculated coating particles very little, to can get
High glaze promotes color intensity.In addition, increasing transparency and covering power.These products reduce viscosity, thus improve stream
Levelling, and the content of coating can be improved.
BYK-111 is not solvent-laden wetting dispersing agent, can be with for solvent type and solventless coatings and printing ink
Stable inorganic pigment, especially titanium dioxide.It is substantially reduced mill base viscosity.
In the embodiment having of the invention, the thixotropic agent is selected from one of rilanit special or polyamide wax
Or two kinds of mixing.
It is carried on the back using full Al-BSF crystal silicon solar energy battery of the invention with low-temperature sintering type the present invention also provides a kind of
The method that face silver paste prepares PERC rear surface of solar cell silver electrode is included in P-type crystal silicon front and is forming silicon nitride anti-reflection
Then the passivating film penetrated plates backside passivation layer at the P-type crystal silicon back side, then overleaf slots on degreeization layer, then right respectively
The obverse and reverse of P-type crystal silicon metallizes, and technical point is: the method packet of the back metal of the P-type crystal silicon
It includes:
(1) aluminium paste is printed in the backside passivation layer of P-type crystal silicon and is dried, and then front is printed silver paste and dried again
It is dry, it is sintered；
(2) the printing low-temperature sintering type back side silver paste printed back silver on the back side aluminium paste described in step (1)
Slurry forms back silver electrode by drying, after sintering.
In the embodiment having of the invention, the drying temperature of the back side aluminium paste in above-mentioned steps (1) is 150~250
DEG C, drying time is 2.5~3.5min, and the drying temperature of the front side silver paste is 150~250 DEG C, the burning of the front side silver paste
Junction temperature is 750~850 DEG C, and sintering time is 8~15s.
In the embodiment having of the invention, the drying temperature of rear electrode is 150~250 DEG C in above-mentioned steps (2),
Drying time is 1.5~2.5min, and the rear electrode sintering junction temperature is 250~400 DEG C, the line width of the rear electrode
For 0.6~2.5mm, wire length is 8~20mm, a height of 2~5 μm of line.
The utility model has the advantages that specific advantage of the invention is as follows:
(1) full Al-BSF crystal silicon solar energy battery of the invention is printed on PERC too with low-temperature sintering type back side silver paste
On positive energy battery, it can effectively prevent silver-colored aluminium and mutually diffuse to form aerdentalloy, welding performance can be improved, back side silver paste is being carried on the back
Aluminum layer is carrying on the back silver-colored region forming layer, can increase the contact area of back side silver paste and aluminium paste, prepared so as to improve
The open-circuit voltage of solar battery reduces silver-colored aluminium overlap resistance, effectively improves the incident photon-to-electron conversion efficiency of battery.
(2) full Al-BSF crystal silicon solar energy battery of the invention is used in the formula of low-temperature sintering type back side silver paste
Nano-silver powder tap density be 3~3.5g/cm3, the specific surface area of nano-silver powder is 4.8~5.8cm2/ g, nano-silver powder
Median particle diameter D50It is 0.05~0.5 μm, the particle size span of nano-silver powder is 0.8~09, and the burn out rate of nano-silver powder is 0.1
~0.2%, the nano-silver powder sintering activity is good, is easy sintering under cryogenic, and can be with part silver paste in sintering process
It can infilter in the aluminium paste of the back side, form preferable silver-colored aluminium contact.
(3) full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver paste system provided by the invention is used
Standby back side silver electrode, the low-temperature sintering type back side silver paste are printed on full aluminium back, and the preparation method of the rear electrode can be formed
It is BSF layers complete, the field passive behavior of electrode zone is improved, reduces Carrier recombination, and enter silicon substrate without silver, no
It can leak electricity, reduce the leakage current of battery, improve photoelectric conversion efficiency, compared with conventional, not have to consider chromatography, electrode can be reduced
Width reduces cost.
Specific embodiment
The technical scheme in the embodiments of the invention will be clearly and completely described below, so that the technology of this field
Personnel can better understand advantages and features of the invention, to make apparent boundary to protection scope of the present invention
It is fixed.Embodiment described in the invention is only a part of the embodiment of the present invention, instead of all the embodiments, is based on this hair
Embodiment in bright, those of ordinary skill in the art are obtained every other without making creative work
Embodiment shall fall within the protection scope of the present invention.
Embodiment 1
1. the preparation of low-temperature sintering type back side silver paste
The present invention provides a kind of full Al-BSF crystalline silicons of formation that is compound, reducing aerdentalloy for reducing carrier
The low-temperature sintering type back side used for solar batteries silver paste, and it is simple using the technological operation of the silver paste, it is suitable for existing technique
Process, technical point are: the low-temperature sintering type back side silver paste includes that following components is prepared according to mass fraction:
Wherein, the tap density of the nano-silver powder is 3.25g/cm3, the specific surface area of the nano-silver powder is 5cm2/
G, the median particle diameter D of the nano-silver powder50It is 0.275 μm, the particle size span of the nano-silver powder is 0.85, the nano silver
The burn out rate of powder is 0.15%.By above-mentioned nano-silver powder, ethyl cellulose, butyl carbitol, DMA, BYK-110 and hydrogenation
Castor oil is uniformly mixed according to set proportion, grinding distribution, so that the fineness of slurry must not exceed 15 μm.
The preparation of the rear electrode of 2.PERC solar battery
Rear electrode metallization is carried out using the above-mentioned low-temperature sintering type back side silver paste being prepared, first in P type crystal
On the front and back sides of silicon, two-sided making herbs into wool is carried out with acid or alkali；
Then in P-type crystal silicon front in the passivating film for forming silicon nitride antireflective；
Then backside passivation layer is plated at the P-type crystal silicon back side, utilizes SiNxOr Al2O3Passivation layer is formed in cell backside,
As back reflector, increasing the absorption of the long glistening light of waves, while the potential difference of P-N interpolar being maximized, reduction electronics is compound, thus
Promote cell conversion efficiency；
Then it overleaf slots on degreeization layer, the laser for carrying out special pattern to backside passivation film before metallization is opened
Film, to remove the passivation layer of part, it is compound that the mode of this part point contact can reduce electrode contact surface product, reduction electrode；
Then it metallizes respectively to the obverse and reverse of P-type crystal silicon, technical point is: the P type crystalline silicon
The method of back metal include:
(1) aluminium paste is printed in the backside passivation layer of P-type crystal silicon and is dried, and then front is printed silver paste and dried again
It is dry, it is sintered, wherein the drying temperature of back side aluminium paste is 200 DEG C, drying time 2min, the drying of the front side silver paste
Temperature is 200 DEG C, and drying time is 2min, and the sintering temperature of the front side silver paste is 800 DEG C, sintering time 11s.
(2) the printing low-temperature sintering type back side silver paste printed back silver on the back side aluminium paste described in step (1)
Slurry forms back silver electrode by drying, after sintering, wherein the drying temperature of above-mentioned rear electrode is 200 DEG C, and drying time is
2min, the rear electrode sintering junction temperature is 325 DEG C, and the line width of the rear electrode is 1.55mm, wire length 14mm, line
A height of 3.5 μm.
Embodiment 2
1. the preparation of glass powder
Prepare 65 parts of Pb2O3, 10 parts of B2O3, 5 parts of ZnO, 1 part of SiO2, 1 part of Al2O3, NiO and 2 part of 1 part
V2O5, then say that each material is uniformly mixed using mixing machine known to dispersion machine or three-roller etc., place be then dried
3.5h is managed, then goes to the raw material of drying process in crucible, then the crucible for being loaded with raw material is placed into heating chamber first
950 DEG C are warming up to, 1.5h is then kept the temperature, the feed liquid for then completing melting obtains frit, then by glass through chill roll
Material is crushed, sieves to obtain median particle diameter D50It is 0.3 μm, the glass powder that softening point is 350 DEG C.
2. the preparation of low-temperature sintering type back side silver paste
The present invention provides a kind of full Al-BSF crystalline silicons of formation that is compound, reducing aerdentalloy for reducing carrier
The low-temperature sintering type back side used for solar batteries silver paste, and it is simple using the technological operation of the silver paste, it is suitable for existing technique
Process, technical point are: the low-temperature sintering type back side silver paste includes that following components is prepared according to mass fraction:
Wherein, the tap density of the nano-silver powder is 3g/cm3, the specific surface area of the nano-silver powder is 4.8cm2/ g,
The median particle diameter D of the nano-silver powder50It is 0.05 μm, the particle size span of the nano-silver powder is 0.9, the nano-silver powder
Burn out rate is 0.1%.By above-mentioned nano-silver powder, terpinol, acetate of butyl carbitol, DMA, BYK-111, polyamide wax
It is uniformly mixed with glass powder according to set proportion, grinding distribution, so that the fineness of slurry must not exceed 15 μm.
The preparation of the rear electrode of 3.PERC solar battery
Rear electrode metallization is carried out using the above-mentioned low-temperature sintering type back side silver paste being prepared, first in P type crystal
On the front and back sides of silicon, two-sided making herbs into wool is carried out with acid or alkali；
Then in P-type crystal silicon front in the passivating film for forming silicon nitride antireflective；
Then backside passivation layer is plated at the P-type crystal silicon back side, utilizes SiNxOr Al2O3Passivation layer is formed in cell backside,
As back reflector, increasing the absorption of the long glistening light of waves, while the potential difference of P-N interpolar being maximized, reduction electronics is compound, thus
Promote cell conversion efficiency；
Then it overleaf slots on degreeization layer, the laser for carrying out special pattern to backside passivation film before metallization is opened
Film, to remove the passivation layer of part, it is compound that the mode of this part point contact can reduce electrode contact surface product, reduction electrode；
Then it metallizes respectively to the obverse and reverse of P-type crystal silicon, technical point is: the P type crystalline silicon
The method of back metal include:
(2) aluminium paste is printed in the backside passivation layer of P-type crystal silicon and is dried, and then front is printed silver paste and dried again
It is dry, it is sintered, wherein the drying temperature of back side aluminium paste is 150 DEG C, drying time 3.5min, the baking of the front side silver paste
Dry temperature is 150 DEG C, and drying time is 3.5min, and the sintering temperature of the front side silver paste is 850 DEG C, sintering time 8s.
The low-temperature sintering type back side silver paste printed back silver paste, warp are printed on the back side aluminium paste described in step (1)
Drying is crossed, forms back silver electrode after sintering, wherein the drying temperature of above-mentioned rear electrode is 150 DEG C, and drying time is
2.5min, the rear electrode sintering junction temperature is 250 DEG C, and the line width of the rear electrode is 0.6mm, wire length 8mm, line
A height of 2 μm.
Embodiment 3
1. the preparation of glass powder
Prepare 60 parts of Bi2O3, 20 parts of B2O3, 10 parts of Zn3(PO4)2, 10 parts of SiO2, 3 parts of Al2O3, 3 parts
NiO and 5 part of V2O5, then using mixing machine known to dispersion machine or three-roller etc. say each material be uniformly mixed, then into
Row is dried 3.5h, then goes to the raw material of drying process in crucible, then the crucible for being loaded with raw material is placed into heating
It is first warming up to 1050 DEG C in chamber, then keeps the temperature 1h, the feed liquid for then completing melting obtains frit, then through chill roll
Frit is crushed, sieves to obtain median particle diameter D50It is 0.4 μm, the glass powder that softening point is 250 DEG C.
2. the preparation of low-temperature sintering type back side silver paste
The present invention provides a kind of full Al-BSF crystalline silicons of formation that is compound, reducing aerdentalloy for reducing carrier
The low-temperature sintering type back side used for solar batteries silver paste, and it is simple using the technological operation of the silver paste, it is suitable for existing technique
Process, technical point are: the low-temperature sintering type back side silver paste includes that following components is prepared according to mass fraction:
Wherein, the tap density of the nano-silver powder is 3.5g/cm3, the specific surface area of the nano-silver powder is 5.8cm2/
G, the median particle diameter D of the nano-silver powder50It is 0.5 μm, the particle size span of the nano-silver powder is 0.9, the nano-silver powder
Burn out rate is 0.2%.By above-mentioned nano-silver powder, alcohol ester 12, ethyl cellulose, sorbitan trioleate, TDO, hydrogenation
Castor oil and polyamide wax are uniformly mixed according to set proportion, grinding distribution, so that the fineness of slurry must not exceed 15
μm。
The preparation of the rear electrode of 3.PERC solar battery
Rear electrode metallization is carried out using the above-mentioned low-temperature sintering type back side silver paste being prepared, first in P type crystal
On the front and back sides of silicon, two-sided making herbs into wool is carried out with acid or alkali；
Then in P-type crystal silicon front in the passivating film for forming silicon nitride antireflective；
Then backside passivation layer is plated at the P-type crystal silicon back side, utilizes SiNxOr Al2O3Passivation layer is formed in cell backside,
As back reflector, increasing the absorption of the long glistening light of waves, while the potential difference of P-N interpolar being maximized, reduction electronics is compound, thus
Promote cell conversion efficiency；
Then it overleaf slots on degreeization layer, the laser for carrying out special pattern to backside passivation film before metallization is opened
Film, to remove the passivation layer of part, it is compound that the mode of this part point contact can reduce electrode contact surface product, reduction electrode；
Then it metallizes respectively to the obverse and reverse of P-type crystal silicon, technical point is: the P type crystalline silicon
The method of back metal include:
(1) aluminium paste is printed in the backside passivation layer of P-type crystal silicon and is dried, and then front is printed silver paste and dried again
It is dry, it is sintered, wherein the drying temperature of back side aluminium paste is 250 DEG C, drying time 3.5min, the baking of the front side silver paste
Dry temperature is 250 DEG C, and drying time is 2.5min, and the sintering temperature of the front side silver paste is 750 DEG C, sintering time 15s.
(2) the printing low-temperature sintering type back side silver paste printed back silver on the back side aluminium paste described in step (1)
Slurry forms back silver electrode by drying, after sintering, wherein the drying temperature of above-mentioned rear electrode is 250 DEG C, and drying time is
2.5min, the rear electrode sintering junction temperature is 400 DEG C, and the line width of the rear electrode is 2.5mm, wire length 20mm, line
A height of 5 μm.
Comparative example 1
10 parts of ball shape silver powder that partial size D50 is 0.8 μm are weighed by mass parts, D50 is 60 parts of flake silver powder of 4.0 μm, double
E5120 parts of type epoxy resin of phenol A, 8.3 parts of reactive diluent butanediol diglycidyl ether, 1.18 parts of curing agent dicyandiamide, Gu
Change 0.02 part of promotor 2-methylimidazole, 0.5 part of thixotropic agents fumed silica, above-mentioned material is successively put into certainly
Turn and the planet strrier of revolution function in after mixing, then uniformly mixed material is transferred on three-roll grinder
Grinding distribution is carried out by certain technique, obtains appearance exquisiteness uniformly without the slurry of big particle, after tested, fineness < 10 μm,
Viscosity is 46Pa.S.Further after 200 mesh silk screen filters, packaging is in store under the conditions of -5 DEG C.
First it is by size by the technological process of production of conventional solar cell on crystal silicon solar energy battery production line
After 156mm*156mm is with a thickness of 180 μm of the premenstrual cleaning and texturing of the naked silicon wafer of standard raw materials monocrystalline, it is diffused and prepares PN junction, then
Etching removal PSG phosphorosilicate glass layer is first carried on the back with the full version printing of silk-screen printing technique after blue diaphragm is made in PECVD plating antireflective film
Face aluminium paste republishes front side silver paste after drying, then drying again, burns cofiring fastly according to cell piece sintering process short time high temperature
Knot, preparation form Al-BSF and positive silver electrode, republish above-mentioned slurry, then solidify 30min preparation in 150 DEG C of baking ovens
Form back side silver electrode.
Comparative example 2
20 parts of ball shape silver powder that partial size D50 is 2.0 μm are weighed by mass parts, D50 is 60 parts of flake silver powder of 2.8 μm, double
E5114 parts of type epoxy resin of phenol A, 5 parts of reactive diluent phenyl glycidyl ether, 0.77 part of curing agent dicyandiamide, solidification promotes
0.03 part of agent 2-ethyl-4-methylimidazole, 0.2 part of thixotropic agents polyamide wax, above-mentioned material is successively put into rotation and
In the planet strrier for the function that revolves after mixing, then by uniformly mixed material it is transferred on three-roll grinder by one
Fixed technique carries out grinding distribution, obtains appearance exquisiteness uniformly without the slurry of big particle, after tested, fineness < 12 μm, viscosity
For 34Pa.S.Further after 200 mesh silk screen filters, packaging is in store under the conditions of -5 DEG C.
By above-mentioned slurry by process flow described in comparative example, wherein back side silver paste baking-curing temperature is 200 DEG C, the time
For 10min, cell piece is made.
Performance detection of the invention is analyzed as follows:
The cell piece of the preparation of Example 1~3 and comparative example 1,2, it is as shown in table 1 to test its electrical data after sintering.
1 electrical data table of table
Change comparative example, comparative example one is write normal PERC battery (comparative example 2), a low-temperature setting battery (comparison
Example 1).
As shown above, silver-colored aluminium can be effectively avoided mutually to expand using back side silver electrode prepared by conductive silver paste of the invention
It dissipates and forms aerdentalloy, welding performance can be improved, back side silver paste is being carried on the back silver-colored region forming layer, can increased in back aluminum layer
The contact area of back side silver paste and aluminium paste reduces silver-colored aluminium overlap joint so as to improve the open-circuit voltage of prepared solar battery
Resistance effectively improves the incident photon-to-electron conversion efficiency of battery.
Finally it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than the present invention is protected
The limitation of range is protected, although explaining in detail referring to preferred embodiment to the present invention, those skilled in the art are answered
Work as understanding, it can be with modification or equivalent replacement of the technical solution of the present invention are made, without departing from the reality of technical solution of the present invention
Matter and range.
Claims (10)
1. a kind of full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver paste, it is characterised in that: the low temperature
Slug type back side silver paste includes that following components is prepared according to mass fraction:
Wherein, the tap density of the nano-silver powder is 3~3.5g/cm3, the specific surface area of the nano-silver powder is 4.8~
5.8cm2/ g, the median particle diameter D of the nano-silver powder50It is 0.05~0.5 μm, the particle size span of the nano-silver powder is
0.8~09, the burn out rate of the nano-silver powder is 0.1~0.2%.
2. full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver paste according to claim 1, feature
Be: the low-temperature sintering type back side silver paste further includes 1~10 part of glass powder according to mass fraction.
3. full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver paste according to claim 2, feature
Be: the softening point of the glass powder is 250~350 DEG C, the median particle diameter D of the glass powder50It is 0.3~04 μm.
4. the full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver paste according to claim 2 or 3,
Be characterized in that: the glass powder includes 60~65 parts of Pb according to mass fraction3O4, 10~20 parts of B2O3, 5~10 parts
ZnO or Zn3(PO4)2, 1~10 part of SiO2, 1~3 part of Al2O3, 1~3 part of NiO and 2~5 part of V2O5。
5. full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver paste according to claim 1, feature
Be: the organic carrier is selected from ethyl cellulose, terpinol, butyl carbitol, acetate of butyl carbitol, alcohol ester 12
One of or several mixing.
6. full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver paste according to claim 1, feature
Be: the dispersing agent is selected from DMA, TDO, sorbitan trioleate, BYK-110 and BYK-111 and (supplements specific auxiliary agent type
Number explanation) one of or several mixing.
7. full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver paste according to claim 1, feature
Be: the thixotropic agent is selected from one of rilanit special or polyamide wax or two kinds of mixing.
8. a kind of full Al-BSF crystal silicon solar energy battery according to claim 1 is prepared with low-temperature sintering type back side silver paste
The method of PERC rear surface of solar cell silver electrode, including P-type crystal silicon front formed silicon nitride antireflective passivating film,
Then backside passivation layer is plated at the P-type crystal silicon back side, then overleaf slotted on degreeization layer, then respectively to P-type crystal silicon
Obverse and reverse metallizes, it is characterised in that: the method for the back metal of the P-type crystal silicon includes:
(1) aluminium paste is printed in the backside passivation layer of P-type crystal silicon and is dried, then front is printed silver paste and is dried again, into
Row sintering；
(2) the low-temperature sintering type back side silver paste printed back silver paste is printed on the back side aluminium paste described in step (1), is passed through
Drying forms back silver electrode after sintering.
9. full Al-BSF crystal silicon solar energy battery according to claim 8 prepares PERC with low-temperature sintering type back side silver paste
The method of rear surface of solar cell silver electrode, it is characterised in that: the drying temperature of the back side aluminium paste in the step (1) is 150
~250 DEG C, drying time is 2.5~3.5min, and the drying temperature of the front side silver paste is 150~250 DEG C, the front
The sintering temperature of silver paste is 750~850 DEG C, and sintering time is 8~15s.
10. full Al-BSF crystal silicon solar energy battery according to claim 8 is prepared with low-temperature sintering type back side silver paste
The method of PERC rear surface of solar cell silver electrode, it is characterised in that: the drying temperature of the rear electrode in the step (2) is
150~250 DEG C, drying time is 1.5~2.5min, and the rear electrode sintering junction temperature is 250~400 DEG C, described
The line width of rear electrode be 0.6~2.5mm, wire length be 8~20mm, a height of 2~5 μm of line.
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| CN201910529059.2A CN110459343B (en) | 2019-06-19 | 2019-06-19 | Low-temperature sintering type back silver paste for all-aluminum back surface field crystalline silicon solar cell |
| PCT/CN2019/095754 WO2020252829A1 (en) | 2019-06-19 | 2019-07-12 | Low-temperature sintered back-surface silver paste for all-aluminum back-surface-field crystalline silicon solar cell |
| US17/431,382 US20220134423A1 (en) | 2019-06-19 | 2019-07-12 | Low temperature-sintering rear silver paste for all-aluminum back surface field crystalline silicon solar cell |
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| CN201910529059.2A CN110459343B (en) | 2019-06-19 | 2019-06-19 | Low-temperature sintering type back silver paste for all-aluminum back surface field crystalline silicon solar cell |
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| CN111446327A (en) * | 2020-02-28 | 2020-07-24 | 天津爱旭太阳能科技有限公司 | Novel printing process of solar cell |
| CN111847889A (en) * | 2020-08-26 | 2020-10-30 | 南通天盛新能源股份有限公司 | Glass powder and silver paste containing same |
| CN112397216A (en) * | 2020-10-27 | 2021-02-23 | 乾宇电子材料（深圳）有限公司 | Screen printing silver paste and organic composition |
| CN112687420A (en) * | 2021-01-08 | 2021-04-20 | 南通天盛新能源股份有限公司 | Low-temperature sintered silver paste and preparation method thereof |
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| CN112687420A (en) * | 2021-01-08 | 2021-04-20 | 南通天盛新能源股份有限公司 | Low-temperature sintered silver paste and preparation method thereof |
Also Published As
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| US20220134423A1 (en) | 2022-05-05 |
| CN110459343B (en) | 2020-12-18 |
| WO2020252829A1 (en) | 2020-12-24 |
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