CN109659068A - Full Al-BSF crystal silicon solar energy battery low temperature curing type back side silver paste - Google Patents
Full Al-BSF crystal silicon solar energy battery low temperature curing type back side silver paste Download PDFInfo
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- CN109659068A CN109659068A CN201811545747.XA CN201811545747A CN109659068A CN 109659068 A CN109659068 A CN 109659068A CN 201811545747 A CN201811545747 A CN 201811545747A CN 109659068 A CN109659068 A CN 109659068A
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 101
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 68
- 239000004332 silver Substances 0.000 title claims abstract description 68
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 47
- 239000010703 silicon Substances 0.000 title claims abstract description 47
- 239000013078 crystal Substances 0.000 title claims abstract description 34
- 238000013035 low temperature curing Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000001723 curing Methods 0.000 claims abstract description 23
- 238000002360 preparation method Methods 0.000 claims abstract description 18
- 239000003822 epoxy resin Substances 0.000 claims abstract description 17
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 17
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 14
- 239000003085 diluting agent Substances 0.000 claims abstract description 11
- 239000013008 thixotropic agent Substances 0.000 claims abstract description 11
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000012360 testing method Methods 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 239000000843 powder Substances 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 8
- 238000000227 grinding Methods 0.000 claims description 8
- 239000002245 particle Substances 0.000 claims description 8
- 238000005245 sintering Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910021485 fumed silica Inorganic materials 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 6
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- HPILSDOMLLYBQF-UHFFFAOYSA-N 2-[1-(oxiran-2-ylmethoxy)butoxymethyl]oxirane Chemical compound C1OC1COC(CCC)OCC1CO1 HPILSDOMLLYBQF-UHFFFAOYSA-N 0.000 claims description 4
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 claims description 4
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 claims description 4
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 claims description 4
- 239000004952 Polyamide Substances 0.000 claims description 4
- 230000003667 anti-reflective effect Effects 0.000 claims description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 229920002647 polyamide Polymers 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000009472 formulation Methods 0.000 claims description 3
- CUFXMPWHOWYNSO-UHFFFAOYSA-N 2-[(4-methylphenoxy)methyl]oxirane Chemical compound C1=CC(C)=CC=C1OCC1OC1 CUFXMPWHOWYNSO-UHFFFAOYSA-N 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 18
- 229910000679 solder Inorganic materials 0.000 abstract description 17
- 239000002002 slurry Substances 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- 238000003466 welding Methods 0.000 abstract description 6
- 230000001070 adhesive effect Effects 0.000 abstract description 4
- 239000000853 adhesive Substances 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 26
- 239000011521 glass Substances 0.000 description 10
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 8
- 238000002156 mixing Methods 0.000 description 6
- 238000004806 packaging method and process Methods 0.000 description 5
- 229930185605 Bisphenol Natural products 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- ZYUVGYBAPZYKSA-UHFFFAOYSA-N 5-(3-hydroxybutan-2-yl)-4-methylbenzene-1,3-diol Chemical compound CC(O)C(C)C1=CC(O)=CC(O)=C1C ZYUVGYBAPZYKSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052793 cadmium Inorganic materials 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- NHADDZMCASKINP-HTRCEHHLSA-N decarboxydihydrocitrinin Natural products C1=C(O)C(C)=C2[C@H](C)[C@@H](C)OCC2=C1O NHADDZMCASKINP-HTRCEHHLSA-N 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000003912 environmental pollution Methods 0.000 description 2
- 230000005906 menstruation Effects 0.000 description 2
- -1 tert-butyl-phenyl Chemical group 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 239000012752 auxiliary agent Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 150000001896 cresols Chemical class 0.000 description 1
- 239000005331 crown glasses (windows) Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 210000002287 horizontal cell Anatomy 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000005355 lead glass Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003345 natural gas Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000003208 petroleum Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Dispersion Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
Abstract
The present invention full Al-BSF crystal silicon solar energy battery low temperature curing type back side silver paste, is grouped as: 10-20 parts of ball shape silver powder by each group of following parts by weight；50-60 parts of flake silver powder；14-30 parts of bisphenol A type epoxy resin；5-9.6 parts of reactive diluent；0.77-1.18 parts of curing agent dicyandiamide；0.02-0.04 parts of curing accelerator；0.2-0.5 parts of thixotropic agents.The invention also discloses the preparation methods of silver paste and the technique for making crystal silicon solar energy battery with it.The crystal silicon solar cell sheet photoelectric conversion efficiency with higher prepared by back side silver paste provided by the present invention and production process, compare the battery of traditional slurry and preparation process preparation, its photoelectric conversion efficiency has 0.4% absolute value to be promoted, and its solder attachment power is also fully met currently to the requirement of welding of battery film adhesive force.
Description
Technical field
The present invention relates to conductive silver paste fields used for solar batteries, and in particular to full Al-BSF crystal silicon solar energy battery is used
Low temperature curing type back side silver paste, preparation method and applications.
Background technique
Exhaustive exploitation and consumption with fossil energies such as petroleum, coal, natural gases, energy crisis and greenhouse effects environment
Pollution is got worse, and the mankind is forced to seek alternative new cleaning fuel.In the following very long time, the sun will become people
Effective supplier of class clean energy resource.Solar radiation is directly converted to electric energy by solar power generation, is in all clean energy resourcies
It is minimum to solar energy conversion links, in the way of most direct.
Current main solar battery is crystal silicon solar energy battery, and from technical maturity, photoelectric conversion efficiency and
Raw material sources consider that the object of giving priority to of photovoltaic solar cell will be silicon systems solar energy in a very long time from now on
Battery.How further increasing the photoelectric conversion efficiency of crystal silicon solar energy battery, to be that industry is continual pursue a goal it
One.
Al-BSF (BSF) is the typical back surface passivation structure that modern crystals silicon solar cell generallys use, and is passed through
The development of many years, the production technology of Al-BSF have gradually tended to mature, have stablized, also increasingly deepened to every research of Al-BSF,
These all show that Al-BSF still will be widely used in crystal silicon solar energy battery within significant period of time from now on, for improving electricity
The transformation efficiency in pond has major contribution.
Therefore the preparation process flow of conventional crystal silicon solar cell is that the naked silicon wafer of raw material is cleaned system before menstruation at present
It after suede, is diffused and prepares PN junction, then etch removal PSG phosphorosilicate glass layer, after blue diaphragm is made in PECVD plating antireflective film, first
Back side silver electrode is prepared with silk-screen printing technique printed back silver paste, printed back aluminium paste prepares Al-BSF, drying after drying
After republish front side silver paste and prepare positive silver electrode, then drying and short time high temperature co-sintering form cell piece.
To meet this manufacturing process, wherein back side silver paste is mainly by conducting function phase, high temperature inorganic Binder Phase glass powder
With printing auxiliary agent organic carrier and other auxiliary addition agents composition.It wherein decomposes, and is not present at high temperature after organic carrier printing
In final back side silver electrode.Glass powder is low because needing to meet fusing point, and good fluidity when high temperature sintering can soak silicon very well
Piece surface, while infiltration can be carried out to silicon wafer inside and form the performance requirements such as good adhesive force, therefore industry uses at present
Most glass powders be lead glass frit, although can satisfy a series of performance requirement, due to system containing lead proportion compared with
Height, environmental pollution is larger, does not meet environmental requirement.In the case where solar battery becomes increasingly popular, leaded solar battery
The use of conductive silver paste is limited and will gradually be eliminated.Although having many crown glass bodies for this status at present
System is developed, but has certain sacrifice to the photoelectric conversion performance of battery, and in the preparation process of glass powder still unavoidably
Using some other heavy metal, still there is comparable pollution to environment.Therefore as can fundamentally changing existing crystal silicon solar
The preparation process and structure of battery, avoid the use of glass powder, will thoroughly change this status, solve problem of environmental pollution.
On the other hand, for using the conventional cell structure of common back side silver paste, since back side aluminium paste compactness is low, the back side
Silver paste cannot be effectively attached thereto, therefore back side silver paste is directly printed on silicon substrate, cause back silver electrode zone without
Al-BSF exists, and becomes invalid and closes region, it reduce batteries to the collection rate of minority carrier, so that the open-circuit voltage of battery
It reduces, short circuit current reduces, and the photoelectric conversion efficiency for eventually leading to battery reduces.Therefore, as can changing this structure, aluminium is improved
The compactness of back surface field effectively allows back side silver electrode is good to be attached in Al-BSF, to form BSF carrying on the back silver-colored region
Layer, can be improved the open-circuit voltage and short circuit current of prepared solar battery, effectively improves the photoelectric conversion efficiency of battery.
Summary of the invention
The object of the present invention is to provide a kind of full Al-BSF crystal silicon solar energy battery low temperature curing type back side silver paste,
Without using inorganic high-temperature agglomerant glass powder, thus it is unleaded, without cadmium, without thallium, had excellent performance using its cell piece prepared, photoelectricity
High conversion efficiency.
The present invention is achieved through the following technical solutions above-mentioned purpose: full Al-BSF crystal silicon solar energy battery low-temperature setting
Type back side silver paste, is grouped as by each group of following parts by weight:
10-20 parts of ball shape silver powder；
50-60 parts of flake silver powder；
14-30 parts of bisphenol A type epoxy resin；
5-9.6 parts of reactive diluent；
0.77-1.18 parts of curing agent dicyandiamide；
0.02-0.04 parts of curing accelerator；
0.2-0.5 parts of thixotropic agents.
Further, the ball shape silver powder surface is coated with surface treating agent, and the purity of the ball shape silver powder is greater than
99.90%, the D50 of the ball shape silver powder is 0.8-2.0 μm；The purity of the flake silver powder is greater than 99.90%, the sheet silver
The D50 of powder is 2.0-4.0 μm.
Further, the bisphenol A epoxide resin be one of E51 type epoxy resin and E44 type epoxy resin or
Two kinds.
Further, the reactive diluent be butanediol diglycidyl ether, phenyl glycidyl ether, cresols shrink it is sweet
Oily ether, to one or more of tert-butyl-phenyl glycidol ether mixture.
Further, the curing accelerator is 2-methylimidazole, in 2-ethyl-4-methylimidazole, 2- phenylimidazole
One or more of mixtures.
Further, the thixotropic agents are one or more of fumed silica, polyamide wax, rilanit special
Mixture.
A kind of preparation method of full Al-BSF crystal silicon solar energy battery low temperature curing type back side silver paste, including following step
It is rapid: by each material of formulation weight number precise in container, first in the planetary high speed with rotation and the function that revolves
Stirrer for mixing is uniform, then again on three-roll grinder grinding distribution to 15 μm of fineness hereinafter, appearance is fine and smooth uniformly without thick
Bulky grain further uses 200 mesh net filtrations to get full Al-BSF crystal silicon solar energy battery low temperature curing type back silver
Slurry, and the stored frozen under the conditions of -5 °C.
A kind of side preparing solar battery sheet with low temperature curing type silver paste using full Al-BSF crystal silicon solar energy battery
Method, comprising the following steps: by the preparation process flow of conventional crystal silicon solar cell that the naked silicon wafer of raw material is clear before menstruation first
It after washing making herbs into wool, is diffused and prepares PN junction, then etch removal PSG phosphorosilicate glass layer, blue diaphragm is made through PECVD plating antireflective film
Afterwards, front side silver paste is first republished after drying with silk-screen printing technique full version printing back side aluminium paste, then drying again, according to electricity
Pond piece sintering process short time high temperature burns co-sintering fastly, and preparation forms Al-BSF and positive silver electrode, republishes the full Al-BSF
Crystal silicon solar energy battery low temperature curing type silver paste solidifies 10-30min in 150-200 °C of baking oven and prepares to form back silver
Electrode carries out testing, sorting.
Compared with prior art, the full Al-BSF crystal silicon solar energy battery low temperature curing type back side silver paste of the present invention has
Beneficial effect is:
1) inventive formulation crystal silicon solar energy battery obtained is pressed with back side silver paste because not using glass powder, therefore is free of
The harmful elements such as lead, cadmium, comply fully with environmental requirement；
2) product of the present invention is as conductive material, and with flake silver powder using the mixed-powder of ball shape silver powder and flake silver powder
Main, supplemented by ball shape silver powder, so that the more uniform densification of electrode film, conductive phase Internet contact is more perfect, to effectively increase
The electric conductivity and adhesive force of silver electrode；
3) cell piece prepared by the present invention, back side silver electrode form BSF layers in back aluminum layer, carrying on the back silver-colored region, improve
The open-circuit voltage and short circuit current of prepared solar battery, effectively increase the photoelectric conversion efficiency of battery.
Specific embodiment
The following are a specific embodiment of the invention, the embodiment described is in order to further describe the present invention, so that originally
The advantages of invention and feature can be easier to be understood by those skilled in the art, therefore not limit the present invention to the embodiment described and send out
In bright.
Embodiment 1
10 parts of ball shape silver powder that partial size D50 is 0.8 μm are weighed by mass parts, D50 is 60 parts of flake silver powder of 4.0 μm, bisphenol A-type
20 parts of epoxy resin E51,8.3 parts of reactive diluent butanediol diglycidyl ether, 1.18 parts of curing agent dicyandiamide, solidification promotees
Into 0.02 part of agent 2-methylimidazole, 0.5 part of thixotropic agents fumed silica, above-mentioned material is successively put into rotation and public affairs
In the planet strrier of rotating function after mixing, then by uniformly mixed material it is transferred on three-roll grinder by certain
Technique carries out grinding distribution, obtains appearance exquisiteness uniformly without the slurry of big particle, and after tested, fineness < 10 μm, viscosity is
46Pa.S.Further after 200 mesh silk screen filters, packaging is in store under the conditions of -5 DEG C.
First it is by size by the technological process of production of conventional solar cell on crystal silicon solar energy battery production line
After 156mm*156mm is with a thickness of 180 μm of the premenstrual cleaning and texturing of the naked silicon wafer of standard raw materials monocrystalline, it is diffused and prepares PN junction, then
Etching removal PSG phosphorosilicate glass layer is first carried on the back with the full version printing of silk-screen printing technique after blue diaphragm is made in PECVD plating antireflective film
Face aluminium paste republishes front side silver paste after drying, then drying again, burns cofiring fastly according to cell piece sintering process short time high temperature
Knot, preparation form Al-BSF and positive silver electrode, republish above-mentioned slurry, then solidify 30min in 150 DEG C of baking ovens and prepare shape
At back side silver electrode, testing, sorting is carried out, measuring its average photoelectric conversion efficiency is 20.67%.
Above-mentioned monocrystaline silicon solar cell piece is subjected to solder attachment power test by the following method: the cell piece of preparation is put down
It puts, upward, the dedicated tin copper-clad welding of the photovoltaic handled through scaling powder is laid in above back silver electrode for back silver electrode, parallel to be close to
In back silver electrode center, wherein one end exceeds silicon chip edge.Nozzle pressing is welded with the electric iron for being pre-heated to 350 DEG C and is slowly slipped over
Welding will exceed the reversed 180 ° of bendings of welding of silicon chip edge, using horizontal cell piece measurer for pulling force, silicon wafer be fixed on folder
In tool, end welding will be turned up and be fixed on test machine grip holder, tested with the constant-velocity of 100mm/min, 180 ° of reversed tear.
3 cell pieces of every group of test are tested above, and test result takes its average value.Measuring its solder attachment power is 3.8N/
mm。
Embodiment 2
20 parts of ball shape silver powder that partial size D50 is 2.0 μm are weighed by mass parts, D50 is 60 parts of flake silver powder of 2.8 μm, bisphenol A-type
14 parts of epoxy resin E51,5 parts of reactive diluent phenyl glycidyl ether, 0.77 part of curing agent dicyandiamide, curing accelerator 2-
0.03 part of ethyl -4-methylimidazole, 0.2 part of thixotropic agents polyamide wax, above-mentioned material is successively put into rotation and revolution
In the planet strrier of function after mixing, then by uniformly mixed material it is transferred on three-roll grinder by certain work
Skill carries out grinding distribution, obtains appearance exquisiteness uniformly without the slurry of big particle, and after tested, fineness < 12 μm, viscosity is
34Pa.S.Further after 200 mesh silk screen filters, packaging is in store under the conditions of -5 DEG C.
By above-mentioned slurry by process flow described in embodiment 1, wherein back side silver paste baking-curing temperature is 200 °C, the time
For 10min, after cell piece is made, testing its average photoelectric conversion efficiency is 20.72%.
The test of solder attachment power is carried out to cell piece obtained by process described in embodiment 1, measuring its solder attachment power is
4.5N/mm。
Embodiment 3
15 parts of commercially available ball shape silver powder that partial size D50 is 1.2 μm are weighed by mass parts, D50 is 50 parts of flake silver powder of 3.2 μm, double
25 parts of E44 of phenol A type epoxy resin, 8.5 parts of reactive diluent cresylglycidylether, 1.16 parts of curing agent dicyandiamide, solidification promotees
Into 0.04 part of agent 2- phenylimidazole, 0.3 part of thixotropic agents rilanit special, above-mentioned material is successively put into rotation and revolution
In the planet strrier of function after mixing, then by uniformly mixed material it is transferred on three-roll grinder by certain work
Skill carries out grinding distribution, obtains appearance exquisiteness uniformly without the slurry of big particle, after tested, fineness < 8 μm, viscosity 49Pa.S.
Further after 200 mesh silk screen filters, packaging is in store under the conditions of -5 °C.
By above-mentioned slurry by process flow described in embodiment 1, wherein back side silver paste baking-curing temperature is 175 °C, the time
For 20min, after cell piece is made, testing its average photoelectric conversion efficiency is 20.65%.
The test of solder attachment power is carried out to cell piece obtained by process described in embodiment 1, measuring its solder attachment power is
3.9N/mm。
Embodiment 4
10 parts of ball shape silver powder that partial size D50 is 1.5 μm are weighed by mass parts, D50 is 50 parts of flake silver powder of 3.6 μm, bisphenol A-type
30 parts of epoxy resin E51, reactive diluent to 8.7 parts of tert-butyl-phenyl glycidol ether, 0.87 part of curing agent dicyandiamide, Gu
Change 0.03 part of 2-methylimidazole of promotor, 0.2 part of thixotropic agents fumed silica, 0.2 part of rilanit special, by above-mentioned object
Successively investment has in the planet strrier of rotation and the function that revolves after mixing material, then uniformly mixed material is shifted
Grinding distribution is carried out by certain technique on to three-roll grinder, obtains appearance exquisiteness uniformly without the slurry of big particle, through surveying
Examination, fineness < 8 μm, viscosity 32Pa.S.Further after 200 mesh silk screen filters, packaging is in store under the conditions of -5 °C.
By above-mentioned slurry by process flow described in embodiment 1, wherein back side silver paste baking-curing temperature is 160 °C, the time
For 25min, after cell piece is made, testing its average photoelectric conversion efficiency is 20.75%.
The test of solder attachment power is carried out to cell piece obtained by process described in embodiment 1, measuring its solder attachment power is
4.7N/mm。
Embodiment 5
20 parts of ball shape silver powder that partial size D50 is 1.8 μm are weighed by mass parts, D50 is 55 parts of flake silver powder of 2.5 μm, bisphenol A-type
10 parts of epoxy resin E51,8 parts of E44,5.6 parts of reactive diluent phenyl glycidyl ether, 1.07 parts of curing agent dicyandiamide, Gu
Change 0.03 part of promotor 2-ethyl-4-methylimidazole, 0.1 part of thixotropic agents fumed silica, 0.2 part of polyamide wax will be upper
It states material successively to put into the planet strrier with rotation and revolution function after mixing, then the material that will be uniformly mixed
It is transferred on three-roll grinder and carries out grinding distribution by certain technique, obtain appearance exquisiteness uniformly without the slurry of big particle,
After tested, fineness < 10 μm, viscosity 53Pa.S.Further after 200 mesh silk screen filters, packaging is stored standby under the conditions of -5 °C
With.
By above-mentioned slurry by process flow described in embodiment 1, wherein back side silver paste baking-curing temperature is 180 °C, the time
For 15min, after cell piece is made, testing its average photoelectric conversion efficiency is 20.73%.
The test of solder attachment power is carried out to cell piece obtained by process described in embodiment 1, measuring its solder attachment power is
4.4N/mm。
Embodiment 6
15 parts of commercially available ball shape silver powder that partial size D50 is 1.0 μm are weighed by mass parts, D50 is 55 parts of flake silver powder of 2.0 μm, double
10 parts, 9 parts of E44 of phenol A type epoxy resin E51,4.6 parts of reactive diluent butanediol diglycidyl ether, phenyl glycidyl
5 parts of ether, 0.96 part of commercially available curing agent dicyandiamide, 0.04 part of curing accelerator 2- phenylimidazole, thixotropic agents fumed silica
Above-mentioned material is successively put into the planet strrier with rotation and the function that revolves and is mixed by 0.2 part, 0.2 part of rilanit special
After closing uniformly, then uniformly mixed material is transferred on three-roll grinder and carries out grinding distribution by certain technique, obtained outer
Sight exquisiteness is uniformly without the slurry of big particle, after tested, fineness < 8 μm, viscosity 38Pa.S.Further through 200 mesh silk screen filters
Afterwards, it packs, is in store under the conditions of -5 °C.
By above-mentioned slurry by process flow described in embodiment 1, wherein back side silver paste baking-curing temperature is 175 °C, the time
For 20min, after cell piece is made, testing its average photoelectric conversion efficiency is 20.68%.
The test of solder attachment power is carried out to cell piece obtained by process described in embodiment 1, measuring its solder attachment power is
4.6N/mm。
Comparative example 1
The conventional crystalline silicon solar cell back side silver paste for taking commercially available producing line normal use, using conventional crystal silicon solar electricity
Pond preparation process makes solar battery sheet, and measuring its photoelectric conversion efficiency is 20.33%, and solder attachment pulling force is 4.2N/mm.
Comparative example 2
The conventional crystalline silicon solar cell back side silver paste for taking commercially available producing line normal use, using conventional crystal silicon solar electricity
Pond preparation process, the difference is that first full version printing back side aluminium paste, printed back silver paste on it again after drying, production is too
Positive energy cell piece, measuring its photoelectric conversion efficiency is 20.58%, and solder attachment pulling force is 0.2N/mm.
By above-described embodiment and comparative example Comparative result it is found that present invention novelty uses low temperature curing type back side silver paste
Conventional high-temperature slug type back side silver paste is substituted, since back side silver paste is in back aluminum layer, so that carrying on the back silver-colored region also forms BSF
Layer, improves the open-circuit voltage and short circuit current for preparing battery, so that final efficiency has 0.4% or so absolute value to be promoted.And by
In using the thermosetting epoxy resin with stronger adhesive property, during baking-curing, part epoxy seeps first
Enter into the back side Al-BSF aluminum particle of loosely organized no mechanical strength, is then formed by curing the asphalt mixtures modified by epoxy resin with compact texture
Rouge-aluminium powder layer guarantees the attachment that back silver electrode can consolidate to form firm interfacial contact with the back silver electrode after solidification
On Al-BSF, the defect that traditional back side silver paste can not overleaf adhere in Al-BSF is effectively prevented under traditional handicraft, most
The solder attachment power for the back side silver electrode that preparation is formed eventually can prepare the back side to be formed with conventional high-temperature slug type back side silver paste
Silver electrode solder attachment power compares favourably, and fully meets present battery piece butt welding and is attached the requirement puted forth effort.
Above embodiments only technical concepts and features to illustrate the invention, its object is to allow the sheet for being familiar with technique
Field personnel can understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.All bases
The equivalent transformation or modification that spirit of the invention is done, are covered by the protection scope of the present invention.
Claims (8)
1. full Al-BSF crystal silicon solar energy battery low temperature curing type back side silver paste, which is characterized in that by following parts by weight
Each group be grouped as:
10-20 parts of ball shape silver powder；
50-60 parts of flake silver powder；
14-30 parts of bisphenol A type epoxy resin；
5-9.6 parts of reactive diluent；
0.77-1.18 parts of curing agent dicyandiamide；
0.02-0.04 parts of curing accelerator；
0.2-0.5 parts of thixotropic agents.
2. full Al-BSF crystal silicon solar energy battery low temperature curing type back side silver paste according to claim 1, feature
Be: the ball shape silver powder surface is coated with surface treating agent, and the purity of the ball shape silver powder is greater than 99.90%, the spherical silver
The D50 of powder is 0.8-2.0 μm；The purity of the flake silver powder is greater than 99.90%, and the D50 of the flake silver powder is 2.0-4.0 μ
m。
3. full Al-BSF crystal silicon solar energy battery low temperature curing type back side silver paste according to claim 1, feature
Be: the bisphenol A epoxide resin is one or both of E51 type epoxy resin and E44 type epoxy resin.
4. full Al-BSF crystal silicon solar energy battery low temperature curing type back side silver paste according to claim 1, feature
Be: the reactive diluent be butanediol diglycidyl ether, phenyl glycidyl ether, cresylglycidylether, to tertiary fourth
One or more of base phenyl glycidyl ether mixture.
5. full Al-BSF crystal silicon solar energy battery low temperature curing type back side silver paste according to claim 1, feature
Be: the curing accelerator is mixed for one or more of 2-methylimidazole, 2-ethyl-4-methylimidazole, 2- phenylimidazole
Close object.
6. full Al-BSF crystal silicon solar energy battery low temperature curing type back side silver paste according to claim 1, feature
Be: the thixotropic agents are one or more of fumed silica, polyamide wax, rilanit special mixture.
7. a kind of full Al-BSF crystal silicon solar energy battery as described in any one of claim 1-6 is carried on the back with low temperature curing type
The preparation method of face silver paste, which comprises the following steps: by each material of formulation weight number precise in container
In, it is uniformly mixed in the planetary high-speed mixer with rotation and the function that revolves first, then again on three-roll grinder
Grinding distribution is to 15 μm of fineness hereinafter, appearance exquisiteness further uses 200 mesh net filtrations uniformly without big particle to get complete
Al-BSF crystal silicon solar energy battery low temperature curing type back side silver paste, and the stored frozen under the conditions of -5 °C.
8. a kind of use full Al-BSF crystal silicon solar energy battery low temperature curing type described in any one of claim 1-6
The method that silver paste prepares solar battery sheet, which comprises the following steps: press conventional crystal silicon solar cell first
The preparation process flow of piece is diffused by after the premenstrual cleaning and texturing of the naked silicon wafer of raw material and prepares PN junction, then etches removal PSG phosphorus silicon
Glassy layer, after blue diaphragm is made in PECVD plating antireflective film, first with the full version printing back side aluminium paste of silk-screen printing technique, after drying again
Front side silver paste is printed, then drying again, burns co-sintering fastly according to cell piece sintering process short time high temperature, preparation forms Al-BSF
With positive silver electrode, the full Al-BSF crystal silicon solar energy battery low temperature curing type silver paste is republished, is dried at 150-200 °C
Solidify 10-30min in case to prepare to form back side silver electrode, carries out testing, sorting.
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| CN111341483A (en) * | 2019-12-31 | 2020-06-26 | 上海匡宇科技股份有限公司 | Heterojunction solar cell conductive silver paste and low-temperature curing method thereof |
| CN116313226A (en) * | 2023-05-12 | 2023-06-23 | 浙江飞宜光电能源科技有限公司 | Low-temperature curing silver paste and preparation method thereof |
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