CN102054881B - Solderable conductive silver paste with low-temperature back of crystalline silicon solar cell and preparation method - Google Patents
Solderable conductive silver paste with low-temperature back of crystalline silicon solar cell and preparation method Download PDFInfo
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- CN102054881B CN102054881B CN2009101979174A CN200910197917A CN102054881B CN 102054881 B CN102054881 B CN 102054881B CN 2009101979174 A CN2009101979174 A CN 2009101979174A CN 200910197917 A CN200910197917 A CN 200910197917A CN 102054881 B CN102054881 B CN 102054881B
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 86
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 3
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 27
- 229910052709 silver Inorganic materials 0.000 claims abstract description 26
- 239000004332 silver Substances 0.000 claims abstract description 26
- 239000002904 solvent Substances 0.000 claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- 239000002002 slurry Substances 0.000 claims description 33
- 229920005989 resin Polymers 0.000 claims description 32
- 239000011347 resin Substances 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 20
- 229920002521 macromolecule Polymers 0.000 claims description 18
- 238000005303 weighing Methods 0.000 claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 13
- 229920000647 polyepoxide Polymers 0.000 claims description 13
- 239000002994 raw material Substances 0.000 claims description 12
- NQBXSWAWVZHKBZ-UHFFFAOYSA-N 2-butoxyethyl acetate Chemical compound CCCCOCCOC(C)=O NQBXSWAWVZHKBZ-UHFFFAOYSA-N 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 239000006185 dispersion Substances 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 7
- 229920000877 Melamine resin Polymers 0.000 claims description 5
- 239000004744 fabric Substances 0.000 claims description 5
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 5
- 150000008065 acid anhydrides Chemical class 0.000 claims description 3
- 150000002460 imidazoles Chemical class 0.000 claims description 3
- 239000012948 isocyanate Substances 0.000 claims description 3
- 150000002513 isocyanates Chemical class 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 238000005476 soldering Methods 0.000 abstract description 6
- 239000000463 material Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000002952 polymeric resin Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 229920003002 synthetic resin Polymers 0.000 abstract 1
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 9
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical class C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 150000008064 anhydrides Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
The invention relates to a solderable conductive silver paste with low-temperature back of a crystalline silicon solar cell and a preparation method, wherein the conductive silver paste comprises the following components and contents: metal sliver powder of 50 to 70, polymer resin of 5 to 15, a curing agent of 0.5 to 2 and a solvent 20 to 40; the preparation method comprises the following steps of: preparing materials, preparing a carrier, preparing silver paste and producing silver paste material. Compared with the prior art, the solderable conductive silver paste with low-temperature back of a crystalline silicon solar cell and a preparation method provided by the invention have the advantages that the soldering resistance of low-temperature conductive silver paste can be improved, the volume resistance of the conductive silver paste material can be reduced, the bonding strength between the sliver layer and the silicon can be improved and the storage time of the conductive silver paste can be prolonged.
Description
Technical field
The present invention relates to a kind of conductive silver paste, especially relate to crystal silicon solar energy battery and can weld conductive silver paste and preparation method with back side low temperature.
Background technology
Solar energy is human inexhaustible regenerative resource. also is clean energy resource, do not produce any environmental pollution.In the middle of effective utilization of solar energy; Big sun can solar photovoltaic utilization be a research field with fastest developing speed in the last few years, most active, is one of project that wherein attracts most attention.Large-scale development with utilize photovoltaic solar generating; The photoelectric conversion efficiency that improves battery is its core place with reducing production costs; Since nearly ten years people to the solar cell theoretic knowledge further deeply, the improvement of production technology, the infiltration of IC technology and the appearance of new battery structure, the conversion efficiency of battery is greatly improved.
Along with solar power generation is more and more paid attention to by people, countries in the world are one after another at the exploitation solar module, and the production of 10 years photovoltaic modulies from now on will be with 20-30% even higher increasing velocity development.Fast-developing roof plan, various tax reduction and exemption policy and subsidy policy and ripe gradually green electric power supply price are that the development in photovoltaic market provides solid foundation.Market will be progressively by the alternative energy source transition of the additional energy in outlying district and rural area to the whole society.In prediction next century, photovoltaic generation becomes one of human basic energy resource.
The future prospect of photovoltaic is familiar with by more and more many national government and financial quarters (like the World Bank).Particularly many developed countries and the numerous and confused photovoltaic development plan of formulating in area since 97 years install 4.6GW (USDOE's planning contains 1,000,000 roof plans) like the U.S. to planning accumulative total in 2010; European Union's accumulative total is installed 6.7GW (regenerative resource white paper), and wherein 3.7GW is installed in inside, Europe, the 3GW outlet; Japan's accumulative total is installed 5GW (the new sunlight program of NEDO Japan), estimates the 1.8GW of other developing countries (estimating about 10%), and world's accumulative total is installed 18GW.Be more than 200 times in 1998, world's photovoltaic module price when the time comes: 1-1.5 dollar/Wp, installation cost be below 2 dollars, cost of electricity-generating 6-8 cent part/KWh.
This patent relates to used for solar batteries proprietary material-electrode slurry.Solar cell is to utilize to receive that solar light irradiation evokes electronics and the potential difference that produces and obtain electric energy.Because of the surface (phototropic face) of Si sheet makes P diffuse to form the n N-type semiconductor N as coexisting substances, the aluminium that utilizes at the back side diffuses to form P shape semiconductor, has so just formed the form that P-n engages.As the repairing circuit use on the P type semiconductor face is exactly that used for solar batteries low temperature can weld electrocondution slurry.
The solar components that generally uses at present need be repaired the conducting wire overleaf; And the welding lead-out wire, and silver slurry curing temperature can not be too high in order to avoid influence battery performance parameter, so comparatively proper curing temperature is that 150 degree~200 are spent; Mainly there is following problem in the silver slurry that uses now: soldering resistance is poor; Not anti-electric iron welding, volume resistance is bigger, and is relatively poor shorter with the slurry holding time with substrate combinating strength.
Summary of the invention
The object of the invention is exactly to provide the crystal silicon solar energy battery that a kind of soldering resistance is good, volume resistance is low, the holding time is long can weld conductive silver paste and preparation method with back side low temperature for the defective that overcomes above-mentioned prior art existence.
The object of the invention can be realized through following technical scheme:
Crystal silicon solar energy battery can weld conductive silver paste with back side low temperature, it is characterized in that, this conductive silver paste comprises following component and content (wt%):
Silver powder 50-70;
Macromolecule resin 5-15;
Curing agent 0.5-2;
Solvent 20-40.
Described silver powder is a flake silver powder, and grain diameter is 2-7 μ m, and tap density is 2.5-4.0g/ml.
Described macromolecule resin is an epoxy resin, the epoxy resin of preferred high softening-point.
Described curing agent comprises imidazoles, isocyanates, acid anhydrides or melamine.
Described solvent comprises 2-Butoxyethyl acetate.
The preparation method that a kind of crystal silicon solar energy battery can weld conductive silver paste with back side low temperature, this method may further comprise the steps:
(1) get the raw materials ready, get the raw materials ready according to following component and content (wt%):
Silver powder 50-70
Macromolecule resin 5-15
Curing agent 0.5-2
Solvent 20-40;
(2) preparation of carrier: take by weighing macromolecule resin and solvent, be heated to 80 ℃ and constant temperature then, be dissolved to viscosity at the 20000-40000 centipoise, with resin filtering and impurity removing on 300-400 purpose screen cloth, obtain carrier again until resin constant temperature;
(3) preparation of silver slurry: take by weighing silver powder and curing agent, then it is fully mixed in batch mixer with carrier, re-use high speed dispersor and carry out high speed dispersion, obtain uniform slurry;
(4) production of silver paste: above-mentioned slurry is ground in three-high mill, and the fine setting through solvent reaches below the 15 μ m silver slurry fineness, and viscosity is 300-400PaS, can weld conductive silver paste thereby obtain crystal silicon solar energy battery with back side low temperature.
Compared with prior art, the present invention selects flake silver powder to solve electric conductivity, weldability; Select macromolecule resin and curing agent to solve soldering resistance; Select high softening-point epoxy resin for use, further improved the softening point of product after solidifying with curing agent, improved soldering resistance; Select for use blocked curing agent to help to prolong the conductive silver paste holding time; Solution silk screen printing property through special solvent.The material soldering resistance ability that the present invention obtains is strong, volume resistance is little, bond strength is firm, the holding time is long, uses conductive silver paste as monocrystalline silicon, polysilicon solar cell backplate repairing circuit, can the import substitution product.
Description of drawings
Fig. 1 is the structural representation of solar components.
Among the figure 1 for low temperature can weld conductive silver paste, 2 for antireflection layer, 3 for N type semiconductor, 4 for P type semiconductor, 5 for backplate.
Embodiment
Below in conjunction with accompanying drawing and specific embodiment the present invention is elaborated.
The preparation method that a kind of crystal silicon solar energy battery can weld conductive silver paste with back side low temperature, this method may further comprise the steps:
(1) gets the raw materials ready, get the raw materials ready: silver powder 60kg, macromolecule resin 10kg, curing agent 1kg, solvent 29kg according to following component.The grain diameter of silver powder is 4 μ m, and tap density 3.0g/ml, macromolecule resin are modified bisphenol A type epoxy resin, and softening point is 130 ℃, and curing agent is melamine cured dose an of enclosed type, and solvent is a 2-Butoxyethyl acetate;
(2) preparation of carrier: take by weighing modified bisphenol A type epoxy resin and 2-Butoxyethyl acetate; Be heated to 80 ℃ and constant temperature; Be dissolved to viscosity at the 30000-40000 centipoise until resin constant temperature, with resin filtering and impurity removing on 300-400 purpose screen cloth, obtain carrier again;
(3) preparation of silver slurry: take by weighing melamine cured dose of silver powder and enclosed type, then it is fully mixed in batch mixer with carrier, re-use high speed dispersor and carry out high speed dispersion, obtain uniform slurry;
(4) production of silver paste: above-mentioned slurry is ground in three-high mill, and the fine setting through solvent makes silver slurry fineness reach 10 μ m, and viscosity is 300-400 PaS, can weld conductive silver paste thereby obtain crystal silicon solar energy battery with back side low temperature.
Above-mentioned silver slurry is sprayed on the solar components, and as shown in Figure 1, solar components comprises that low temperature can weld conductive silver paste 1, antireflection layer 2, N type semiconductor 3, P type semiconductor 4 and backplate 5.Low temperature can weld the top that conductive silver paste 1 is located at antireflection layer 2, and the bottom of antireflection layer 2 is followed successively by N type semiconductor 3, P type semiconductor 4 and backplate 5, arranges in order.
(1) gets the raw materials ready, get the raw materials ready: silver powder 65kg, macromolecule resin 8kg, curing agent 1kg, solvent 26kg according to following component.The grain diameter of silver powder is 7 μ m, and tap density 3.2g/ml, macromolecule resin are modified bisphenol F type epoxy resin, and softening point is 140 ℃, and curing agent is the enclosed type anhydride curing agent, and solvent is a 2-Butoxyethyl acetate;
(2) preparation of carrier: take by weighing modified bisphenol F type epoxy resin and 2-Butoxyethyl acetate; Be heated to 80 ℃ and constant temperature; Be dissolved to viscosity at the 20000-40000 centipoise until resin constant temperature, with resin filtering and impurity removing on 300-400 purpose screen cloth, obtain carrier again;
(3) preparation of silver slurry: take by weighing silver powder and enclosed type anhydride curing agent, then it is fully mixed in batch mixer with carrier, re-use high speed dispersor and carry out high speed dispersion, obtain uniform slurry;
(4) production of silver paste: above-mentioned slurry is ground in three-high mill, and the fine setting through solvent makes silver slurry fineness reach 15 μ m, and viscosity is 300-400PaS, can weld conductive silver paste thereby obtain crystal silicon solar energy battery with back side low temperature.
Embodiment 3
(1) gets the raw materials ready, get the raw materials ready: silver powder 50kg, macromolecule resin 15kg, curing agent 2kg, solvent 20kg according to following component.The grain diameter of silver powder is 7 μ m, and tap density 4.0g/ml, macromolecule resin are modified bisphenol F type epoxy resin, and softening point is 140 ℃, and curing agent is the enclosed type imidazole curing agent, and solvent is a 2-Butoxyethyl acetate;
(2) preparation of carrier: take by weighing modified bisphenol F type epoxy resin and 2-Butoxyethyl acetate, be heated to 80 ℃ and constant temperature, be dissolved to viscosity at 20000 centipoises, with resin filtering and impurity removing on 300 purpose screen cloths, obtain carrier again until resin constant temperature;
(3) preparation of silver slurry: take by weighing silver powder and enclosed type imidazole curing agent, then it is fully mixed in batch mixer with carrier, re-use high speed dispersor and carry out high speed dispersion, obtain uniform slurry;
(4) production of silver paste: above-mentioned slurry is ground in three-high mill, and the fine setting through solvent makes silver slurry fineness reach 15 μ m, and viscosity is 300PaS, can weld conductive silver paste thereby obtain crystal silicon solar energy battery with back side low temperature.
(1) gets the raw materials ready, get the raw materials ready: silver powder 70kg, macromolecule resin 5kg, curing agent 0.5kg, solvent 40kg according to following component.The grain diameter of silver powder is 2 μ m, and tap density 2.5g/ml, macromolecule resin are modified bisphenol A type epoxy resin, and softening point is 130 ℃, and curing agent is the enclosed type imidazole curing agent, and solvent is a 2-Butoxyethyl acetate;
(2) preparation of carrier: take by weighing modified bisphenol A type epoxy resin and 2-Butoxyethyl acetate, be heated to 80 ℃ and constant temperature, be dissolved to viscosity at 40000 centipoises, with resin filtering and impurity removing on 400 purpose screen cloths, obtain carrier again until resin constant temperature;
(3) preparation of silver slurry: take by weighing silver powder and enclosed type imidazole curing agent, then it is fully mixed in batch mixer with carrier, re-use high speed dispersor and carry out high speed dispersion, obtain uniform slurry;
(4) production of silver paste: above-mentioned slurry is ground in three-high mill, and the fine setting through solvent makes silver slurry fineness reach 5 μ m, and viscosity is 400PaS, can weld conductive silver paste thereby obtain crystal silicon solar energy battery with back side low temperature.
Claims (6)
1. a crystal silicon solar energy battery can weld conductive silver paste with back side low temperature, it is characterized in that, this conductive silver paste comprises following component and content (wt%):
Silver powder 50-70;
Macromolecule resin 5-15;
Curing agent 0.5-2;
Solvent 20-40;
Crystal silicon solar energy battery may further comprise the steps with the preparation that back side low temperature can weld conductive silver paste:
(1) preparation of carrier: take by weighing macromolecule resin and solvent, be heated to 80 ℃ and constant temperature then, be dissolved to viscosity at the 20000-40000 centipoise, with resin filtering and impurity removing on 300-400 purpose screen cloth, obtain carrier again until resin constant temperature;
(2) preparation of silver slurry: take by weighing silver powder and curing agent, then it is fully mixed in batch mixer with carrier, re-use high speed dispersor and carry out high speed dispersion, obtain uniform slurry;
(3) production of silver paste: above-mentioned slurry is ground in three-high mill, and the fine setting through solvent reaches below the 15 μ m silver slurry fineness, and viscosity is 300-400PaS, can weld conductive silver paste thereby obtain crystal silicon solar energy battery with back side low temperature.
2. a kind of crystal silicon solar energy battery according to claim 1 can weld conductive silver paste with back side low temperature, it is characterized in that, described silver powder is a flake silver powder, and grain diameter is 2-7 μ m, and tap density is 2.5-4.0g/ml.
3. a kind of crystal silicon solar energy battery according to claim 1 can weld conductive silver paste with back side low temperature, it is characterized in that, described macromolecule resin is an epoxy resin.
4. a kind of crystal silicon solar energy battery according to claim 1 can weld conductive silver paste with back side low temperature, it is characterized in that, described curing agent comprises imidazoles, isocyanates, acid anhydrides or melamine.
5. a kind of crystal silicon solar energy battery according to claim 1 can weld conductive silver paste with back side low temperature, it is characterized in that, described solvent comprises 2-Butoxyethyl acetate.
6. preparation method that crystal silicon solar energy battery can weld conductive silver paste with back side low temperature, this method may further comprise the steps:
(1) get the raw materials ready, get the raw materials ready according to following component and content (wt%):
Described silver powder is a flake silver powder; Grain diameter is 2-7 μ m, and tap density is 2.5-4.0g/ml, and described macromolecule resin is an epoxy resin; Described curing agent comprises imidazoles, isocyanates, acid anhydrides or melamine, and described solvent comprises 2-Butoxyethyl acetate;
(2) preparation of carrier: take by weighing macromolecule resin and solvent, be heated to 80 ℃ and constant temperature then, be dissolved to viscosity at the 20000-40000 centipoise, with resin filtering and impurity removing on 300-400 purpose screen cloth, obtain carrier again until resin constant temperature;
(3) preparation of silver slurry: take by weighing silver powder and curing agent, then it is fully mixed in batch mixer with carrier, re-use high speed dispersor and carry out high speed dispersion, obtain uniform slurry;
(4) production of silver paste: above-mentioned slurry is ground in three-high mill, and the fine setting through solvent reaches below the 15 μ m silver slurry fineness, and viscosity is 300-400PaS, can weld conductive silver paste thereby obtain crystal silicon solar energy battery with back side low temperature.
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