CN105405488A - Aluminium paste for laser pore-forming partial back contact-passivating emitter crystalline silicon solar cell and preparation method and application thereof - Google Patents
Aluminium paste for laser pore-forming partial back contact-passivating emitter crystalline silicon solar cell and preparation method and application thereof Download PDFInfo
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- CN105405488A CN105405488A CN201510857362.7A CN201510857362A CN105405488A CN 105405488 A CN105405488 A CN 105405488A CN 201510857362 A CN201510857362 A CN 201510857362A CN 105405488 A CN105405488 A CN 105405488A
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 149
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 146
- 239000004411 aluminium Substances 0.000 title claims abstract description 144
- 238000002360 preparation method Methods 0.000 title claims abstract description 16
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 10
- 239000011521 glass Substances 0.000 claims abstract description 73
- 239000000843 powder Substances 0.000 claims abstract description 47
- 239000000654 additive Substances 0.000 claims abstract description 11
- 230000000996 additive effect Effects 0.000 claims abstract description 11
- 239000006259 organic additive Substances 0.000 claims abstract description 10
- 238000001914 filtration Methods 0.000 claims abstract description 6
- 239000000428 dust Substances 0.000 claims description 48
- 238000002161 passivation Methods 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- 239000010703 silicon Substances 0.000 claims description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 31
- 239000013078 crystal Substances 0.000 claims description 26
- 238000005553 drilling Methods 0.000 claims description 24
- 239000002002 slurry Substances 0.000 claims description 21
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 18
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 16
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 claims description 16
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 12
- 239000002245 particle Substances 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 9
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 claims description 8
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 claims description 8
- 239000001856 Ethyl cellulose Substances 0.000 claims description 8
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 8
- 229920001249 ethyl cellulose Polymers 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 8
- 229920001568 phenolic resin Polymers 0.000 claims description 8
- 239000005011 phenolic resin Substances 0.000 claims description 8
- 238000007650 screen-printing Methods 0.000 claims description 8
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 claims description 8
- 235000013312 flour Nutrition 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 239000004094 surface-active agent Substances 0.000 claims description 7
- 238000005303 weighing Methods 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 239000002893 slag Substances 0.000 claims description 6
- 239000002904 solvent Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 229910002012 Aerosil® Inorganic materials 0.000 claims description 5
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 5
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 5
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 5
- 239000010935 stainless steel Substances 0.000 claims description 5
- 229910001220 stainless steel Inorganic materials 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- IIZPXYDJLKNOIY-JXPKJXOSSA-N 1-palmitoyl-2-arachidonoyl-sn-glycero-3-phosphocholine Chemical compound CCCCCCCCCCCCCCCC(=O)OC[C@H](COP([O-])(=O)OCC[N+](C)(C)C)OC(=O)CCC\C=C/C\C=C/C\C=C/C\C=C/CCCCC IIZPXYDJLKNOIY-JXPKJXOSSA-N 0.000 claims description 3
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000004925 Acrylic resin Substances 0.000 claims description 3
- 229920000178 Acrylic resin Polymers 0.000 claims description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000001293 FEMA 3089 Substances 0.000 claims description 3
- 239000004110 Zinc silicate Substances 0.000 claims description 3
- JOKCRERXAFYLMX-UHFFFAOYSA-N [Si].[B].[Zn].[Bi] Chemical compound [Si].[B].[Zn].[Bi] JOKCRERXAFYLMX-UHFFFAOYSA-N 0.000 claims description 3
- 238000000889 atomisation Methods 0.000 claims description 3
- 239000004359 castor oil Substances 0.000 claims description 3
- 235000019438 castor oil Nutrition 0.000 claims description 3
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 claims description 3
- 239000000787 lecithin Substances 0.000 claims description 3
- 235000010445 lecithin Nutrition 0.000 claims description 3
- 229940067606 lecithin Drugs 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 239000006187 pill Substances 0.000 abstract description 10
- 238000000227 grinding Methods 0.000 abstract 1
- 238000012216 screening Methods 0.000 abstract 1
- 238000003756 stirring Methods 0.000 abstract 1
- 238000005245 sintering Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 8
- 230000001070 adhesive effect Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000002390 adhesive tape Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000010079 rubber tapping Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000010431 corundum Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910000632 Alusil Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005470 impregnation Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 150000001398 aluminium Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000005308 flint glass Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- -1 specifically Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses an aluminium paste for a laser pore-forming partial back contact-passivating emitter crystalline silicon solar cell and a preparation method and an application thereof. The aluminium paste comprises the following components in percentage by weight: 50.00-75.00% of micro-size aluminium powder, 0.50-2.00% of glass powder, 15.00-30.00% of organic intermediate, 0.02-1.00% of inorganic additive and 1.00-2.50% of organic additive, and the sum of the components of the aluminium paste is 100% in percentage by weight. The required aluminium paste is prepared by steps of dosing, dual-planetary stirring, three-roller machine grinding, screening and filtering. When the aluminium paste is applied, the aluminium paste is printed on a monocrystalline wafer by a 325-mesh silk screen, and then the monocrystalline wafer is dried and sintered. An aluminium back field is formed in the pore-forming place in the back surface of the battery piece by the aluminium paste; the aluminium paste is relatively strong in adhesion with the passivating layer in the non-pore-forming places; and in addition, pill of aluminium or aluminium protruding parts are not formed on the surface of an aluminium film, so that the formed aluminium electrode is excellent in the electrical performance.
Description
Technical field
The present invention relates to a kind of crystal silicon solar energy battery electric slurry, refer in particular to the aluminium paste that a kind of applicable crystalline silicon local back passivation solar cell uses, specifically a kind of unleaded excellent with adhesive force between passivation layer, BSF layer is formed well, smooth in appearance is smooth contacts-the aluminium paste of passivation emitter crystal silicon solar energy battery and its preparation method and application for laser beam drilling local back.
Background technology
The features such as generating efficiency is high, stable performance, industrialization process maturation are had because of crystal silicon solar energy battery, what use crystalline silicon to be base material in current field of photovoltaic power generation accounts for more than 95% of whole field of photovoltaic power generation, the electricity generating principle of crystal silicon solar energy battery is that solar light irradiation is absorbed at the boundary layer of cell piece glazing at cell piece, electronics can excite by the photon with enough energy in P-type silicon and N-type silicon from covalent bond, inspires electron-hole pair.Electronics near boundary layer and hole, before compound, are separated from each other in the internal electric field that PN junction both sides are formed.Electronics moves to the N district of positively charged and hole to electronegative P district.By the separation of charge of boundary layer, produce certain voltage difference by between P district and N district.The rising of surface of crystalline silicon defect state causes the compound of solar cell photo-generated carrier, and surface passivation technique, by the dangling bonds at saturated surface of crystalline silicon place, reduces surface activity, thus reduces the recombination-rate surface of minority carrier.
Laser beam drilling local back contact-passivation emitter solar cell is a kind of local back contact battery technology of German FraunhoferISE company research and development, it carries out perforate by laser by the passivation layer on battery back surface, and then print or evaporation one deck aluminium electrode layer, in position aluminium and the crystalline silicon formation ohmic contact of perforate, the method well avoids the compound of minority carrier at non-perforate back surface on the one hand, achieve the ohmic contact of the low series resistance of back surface on the other hand, improve the photoelectric conversion efficiency of solar cell significantly.
Be applied to the aluminium paste of laser beam drilling local back contact-passivation emitter solar cell, require in battery roasting process, aluminium paste can not the passivation layer of eating thrown non-open area, but aluminium paste is wanted to form stronger adhesive force between passivation layer, prevents the aluminium electrode layer after roasting from coming off; Good BSF layer can be formed with crystalline silicon at opening area; Aluminium electrode layer conductive effect is good, and surface does not have the defects such as aluminium pill, aluminium bud.
US2011/120535Al and WO2013/0366689 discloses the aluminum thick film composition or only have without poor ability of grilling thoroughly.Its invention relate to the preparation method of laser beam drilling local back contact-passivation emitter aluminium paste used for solar batteries, and the constituent of slurry has ball aluminum powder, organic intermediate and one or more frits.This frit is mainly selected from flint glass material, wherein the percentage by weight of lead content is 53-57%, weight ratio is the silicon dioxide of 25-29%, weight ratio is the aluminium oxide of 2-6% and weight ratio is the diboron trioxide of 6-9%, and these aluminum thick film compositions can be used in the backplate forming laser beam drilling local back contact-passivation emitter solar cell.
Summary of the invention
The object of the invention is the defect existed for prior art, provide a kind of unleaded excellent with adhesive force between passivation layer, BSF layer is formed well, smooth in appearance is smooth contacts-the aluminium paste of passivation emitter crystal silicon solar energy battery and its preparation method and application for laser beam drilling local back; This aluminium paste slurry through silk screen printing in back surface passivation on the crystal silicon solar energy battery substrate of local laser perforate, dry, form aluminium back surface field at cell piece back side tapping after sintering, comparatively strong adhesive force is had at non-tapping and passivation layer, aluminium film surface does not have aluminium pill, aluminium bud, not dry linting or come off, excellent electrical property.
The object of the invention is to solve by the following technical programs:
For an aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery, it is characterized in that: the component of described aluminium paste and weight percentage are: the organic additive of the micron order aluminium powder of 50.00%-75.00%, the glass dust of 0.50%-2.00%, the organic intermediate of 15.00%-30.00%, the inorganic additive of 0.02-1.00% and 1.00-2.50%; And the component weight percentage sum of above-mentioned aluminium paste is 100%.
Described glass dust is lead-free glass powder.
Described glass dust is the glass dust of bismuth-boron-silicon-zinc silicate systems, and the component of this glass dust and weight percentage are: the aluminium oxide of the antimonous oxide of the bismuth oxide of 60.00%-75.00%, the diboron trioxide of 8.00%-20.00%, 0.05%-1.50%, the silicon dioxide of 1.00%-8.00%, the zinc oxide of 7.00%-15.00% and 0.50%-7.00%; The component weight percentage sum of above-mentioned glass dust is 100%.
The preparation method of described glass dust is: make each component weight percentage sum of this glass dust be 100% each component accurate weighing of glass dust batching, each component dries rear Homogeneous phase mixing respectively through 110 DEG C-120 DEG C, after mixing under 1000 DEG C of-1200 DEG C of high temperature melting 0.5h-1.5h, then the shrend in electron-grade water of melting thing obtains glass dregs; Glass slag ball is milled to the glass dust that granularity is 2 μm-5 μm, finally dries and obtain lead-free glass powder.
Described organic intermediate is a kind of thick liquid formed in a solvent by resin dissolves, and described resin is at least one in phenolic resins, the acrylic resin of lower alcohol, ethyl cellulose; Described solvent is at least one in butyl carbitol acetate, terpinol, turpentine oil, dibutyl phthalate, diethylene glycol butyl ether, n-butanol, ethylene glycol phenyl ether.
The component of described organic intermediate and weight percentage are: the ethylene glycol phenyl ether of the terpinol of the ethyl cellulose of 4.00%-6.00%, the phenolic resins of 2.00%-5.00%, 35.00%-65.00%, the butyl carbitol acetate of 20.00%-35.00%, the dibutyl phthalate of 2.50%-6.50%, the n-butanol of 4.00%-9.50% and 3.00%-10.00%, and the component weight percentage sum of above-mentioned organic intermediate is 100%; Drop in reactor by after above-mentioned raw materials accurate weighing batching, control reaction temperature at 60 DEG C-80 DEG C, the organic intermediate of transparent and homogeneous after dissolving 2h-3h, can be obtained.
Described micron order aluminium powder is the ball aluminum powder that gas phase atomization obtains.
The particle diameter of described micron order aluminium powder comprises 2 μm-3 μm and 5 μm of-6 μm of two grades, and the weight percentage of two grade particle diameters is: the micron order aluminium powder that the particle diameter of 10.00%-40.00% is the micron order aluminium powder of 2 μm-3 μm, the particle diameter of 60.00%-90.00% is 5 μm-6 μm.
Described inorganic additive is at least one in micron order silica flour, micron order boron powder, aerosil.
Described organic additive is surfactant, and surfactant is at least one in lecithin, class 85 of department, castor oil.
A kind of preparation method of the aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery, it is characterized in that: the step of described preparation method is: in size barrel, add the organic intermediate of formula ratio, organic additive, inorganic additive and glass dust successively carry out preliminary premixed, then adopting double-planet to be stirred to material after adding the micron order aluminium powder of formula ratio is starchiness, then be 12 μm-17.5 μm by the fineness that three-roller is ground to slurry, finally with after 280 order stainless steel sift net filtrations required aluminium paste.
For an application for the aluminium paste of laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery, it is characterized in that: with laser by the SiO on monocrystalline silicon piece
2/ SiN
xback side dielectric film outputs multiple circular hole, then aluminium paste slurry with 325 order silk screen printings on this monocrystalline silicon piece, then dry, sinter.
The present invention has the following advantages compared to existing technology:
Aluminium paste slurry provided by the invention through silk screen printing in back surface passivation on the crystal silicon solar energy battery substrate of local laser perforate, dry, form aluminium back surface field at cell piece back side tapping after sintering, comparatively strong adhesive force is had at non-tapping and passivation layer, aluminium film surface does not have aluminium pill, aluminium bud, not dry linting or come off, excellent electrical property.
Embodiment
Below in conjunction with embodiment, the present invention is further illustrated.
For an aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery, the component of above-mentioned aluminium paste and weight percentage are: the organic additive of the micron order aluminium powder of 50.00%-75.00%, the glass dust of 0.50%-2.00%, the organic intermediate of 15.00%-30.00%, the inorganic additive of 0.02-1.00% and 1.00-2.50%; And the component weight percentage sum of above-mentioned aluminium paste is 100%.
In above-mentioned component, micron order aluminium powder is the ball aluminum powder that gas phase atomization obtains, the particle diameter of micron order aluminium powder comprises 2 μm-3 μm and 5 μm of-6 μm of two grades, and the weight percentage of two grade particle diameters is: the particle diameter of 10.00%-40.00% is the micron order aluminium powder of 2 μm-3 μm, the particle diameter of 60.00%-90.00% is the micron order aluminium powder of 5 μm-6 μm, calculate the optimal proportion of two kinds of micron order aluminium powder collocation needs according to close-packed principle during use, and on this basis according to the demand of aluminium paste performance, the micron order aluminium powder ratio of different-grain diameter is adjusted thus obtains the best aluminium paste formula of manufacturability.When in micron order aluminium powder ratio, fine powder content is higher, resistivity after slurry sintering can reduce, the activity of atomized aluminium is generally higher than Grenaille simultaneously, the amount that under the condition of high temperature, aluminium spreads in silicon chip will increase, contribute to aluminium and silicon forms better BSF layer, improve the electrical property of battery, and the higher meeting of fine powder content causes aluminium film in sintering process easily to play bag, aluminium pill etc., affects outward appearance and the electrical property of aluminium electrode; Otherwise thicker aluminium powder then.
And the glass dust adopted is lead-free glass powder, specifically, glass dust is the glass dust of bismuth-boron-silicon-zinc silicate systems, and the component of this glass dust and weight percentage are: the aluminium oxide of the antimonous oxide of the bismuth oxide of 60.00%-75.00%, the diboron trioxide of 8.00%-20.00%, 0.05%-1.50%, the silicon dioxide of 1.00%-8.00%, the zinc oxide of 7.00%-15.00% and 0.50%-7.00%; The component weight percentage sum of above-mentioned glass dust is 100%.The preparation method of above-mentioned glass dust is: make each component weight percentage sum of this glass dust be 100% each component accurate weighing of glass dust batching, each component dries rear Homogeneous phase mixing respectively through 110 DEG C-120 DEG C, after mixing under 1000 DEG C of-1200 DEG C of high temperature melting 0.5h-1.5h, then the shrend in electron-grade water of melting thing obtains glass dregs; Glass slag ball is milled to the glass dust that granularity is 2 μm-5 μm, finally dries and can obtain required lead-free glass powder.The softening temperature of above-mentioned lead-free glass powder is in the scope of 400 DEG C-600 DEG C, the conversion temperature of glass dust and softening characteristics determined in sintering process glass dust post liquefaction to the effect of impregnation of aluminium powder, generally compared with the glass of low softening point, it is all better to the wettability of aluminium powder and passivating film, the good adhesion of slurry of easy formation, simultaneously too early in sintering process compared with the glass dust of low softening point liquefaction, corrode the pellumina on aluminium powder surface, the aluminium electrode layer after sintering is caused easily to occur aluminium pill, aluminium bud etc., simultaneously, glass dust liquefaction is also not easy to control to the erosion of passivating film too early, some places likely can be caused to occur burning the phenomenon of passivating film, affect the combination property of slurry, the oxide-film of aluminium powder and the passivation layer of silicon chip surface too can not be corroded in sintering process compared with the glass of high softening-point, a good outward appearance can be had, meanwhile, it will be very limited to the lifting of aluminium film adhesive force, the situation likely there will be dry linting, coming off.
Organic intermediate is a kind of thick liquid formed in a solvent by resin dissolves, the viscosity of organic intermediate by the kind of resin contained in organism and content number regulate, wherein resin is at least one in phenolic resins, the acrylic resin of lower alcohol, ethyl cellulose, and solvent is at least one in butyl carbitol acetate, terpinol, turpentine oil, dibutyl phthalate, diethylene glycol butyl ether, n-butanol, ethylene glycol phenyl ether.In order to prove above-mentioned organic intermediate, a kind of formula of organic intermediate is now provided, the component of this organic intermediate and weight percentage are: the ethylene glycol phenyl ether of the terpinol of the ethyl cellulose of 4.00%-6.00%, the phenolic resins of 2.00%-5.00%, 35.00%-65.00%, the butyl carbitol acetate of 20.00%-35.00%, the dibutyl phthalate of 2.50%-6.50%, the n-butanol of 4.00%-9.50% and 3.00%-10.00%, and the component weight percentage sum of above-mentioned organic intermediate is 100%; Drop in reactor by after above-mentioned raw materials accurate weighing batching, control reaction temperature at 60 DEG C-80 DEG C, the organic intermediate of transparent and homogeneous after dissolving 2h-3h, can be obtained.
Inorganic additive is at least one in micron order silica flour, micron order boron powder, aerosil in addition.Micron order silica flour is added in aluminium paste, in sintering process, these silica flours and aluminium powder are easy to after temperature reaches the al-si eutectic temperature of 577 DEG C, reaction formation alusil alloy can reduce the reactivity between aluminium powder and crystalline silicon silicon, suitably can reduce the generation that aluminium bud waits appearance quality; In addition, being formed of alusil alloy helps sinter the rear lifting of aluminium electrode film layer hardness and the lifting of adhesive force.If add micron order boron powder, then in sintering process, boron element can be diffused in silicon chip, can obtain higher Voc, because the theoretical maximum solid solution degree of boron in silicon can reach 6 × 10
20atom/cm
3exceed the maximum solid solution degree of aluminium in silicon order of magnitude, in aluminium paste, doped with boron belongs to direct doping in crystalline silicon, can obtain the P type doping content of higher concentration, the reliability of the solar cell prepared by improving therefore, it is possible to more effective and photoelectric properties.The introducing of last aerosil can effectively reduce the angularity of silicon chip, reduces the fragment rate of cell piece in the course of processing.
Last organic additive is surfactant, and this surfactant is at least one in lecithin, class 85 of department, castor oil.Surfactant can improve the effect of impregnation between organic intermediate and aluminium powder, glass dust, inorganic additive, improves the dispersion of aluminium paste, improves the uniformity coefficient of each component in aluminium paste.
A kind of preparation method of the aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery, the step of this preparation method is: 1) dissolve in the reactor of the raw material of organic intermediate at 60 DEG C of-80 DEG C of temperature, dissolves the organic intermediate that 2h-3h obtains component transparent and homogeneous; 2) the raw material accurate weighing of glass dust is prepared burden, each component dries 2h-3h respectively through 110 DEG C-120 DEG C, load after Homogeneous phase mixing in corundum crucible, melting 0.5h-1.5h under 1000 DEG C of-1200 DEG C of high temperature in high temperature furnace, then the shrend in electron-grade water of melting thing obtains glass dregs, glass slag ball is milled to the glass dust that granularity is 2 μm-5 μm, finally dries and can obtain required lead-free glass powder; 3) in size barrel, add the organic intermediate of formula ratio, organic additive, inorganic additive and glass dust successively carry out preliminary premixed, then adopting double-planet to be stirred to material after adding the micron order aluminium powder of formula ratio is starchiness, then be 12 μm-17.5 μm by the fineness that three-roller is ground to slurry, finally with after 280 order stainless steel sift net filtrations required aluminium paste.
When the aluminium paste of above-mentioned preparation is applied, adopt laser by the SiO on monocrystalline silicon piece
2/ SiN
xback side dielectric film outputs multiple circular hole, then aluminium paste slurry with 325 order silk screen printings on this monocrystalline silicon piece, then dry, sinter.Test electrical property after sintering; Use its peel strength of 3M adhesive tape test, according to aluminium paste on adhesive tape after peeling off remain number judge the quality of adhesion of slurry; Observe the number of the rear aluminium electrode surface aluminium pill of statistics sintering, aluminium bud.
In order to make technological means of the present invention, creation characteristic, reach object and effect is easy to understand, below in conjunction with the step of production, set forth the present invention further.
Embodiment one
1), organic intermediate is prepared
According to percentage by weight, the ethyl cellulose of 5.00%, the phenolic resins of 2.00%, terpinol, the butyl carbitol acetate of 22.00%, dibutyl phthalate, the n-butanol of 5.00%, the ethylene glycol phenyl ether of 8.00% of 3.00% of 55.00% are mixed with the raw material of organic intermediate, the raw material of organic intermediate is dropped in reactor, control reaction temperature at 60 DEG C, after dissolving 2h, obtain the organic intermediate of component transparent and homogeneous.
2), glass dust is prepared
According to percentage by weight 70.00% bismuth oxide, 10.00% diboron trioxide, 0.50% antimonous oxide, the silicon dioxide of 4.50%, the zinc oxide of 12.00% and 3.00% aluminium oxide be mixed with the raw material of glass dust, each component dries 2h respectively through 110 DEG C, load after Homogeneous phase mixing in corundum crucible, melting 1.5h under 1000 DEG C of high temperature in high temperature furnace, the shrend in electron-grade water of melting thing obtains glass dregs, glass slag ball is milled to the glass dust that granularity is 2 μm-5 μm, finally dries and can obtain required lead-free glass powder.
3), aluminium paste is prepared
Percentage by weight according to aluminium paste component: the 2-3 μm of aluminium powder of 15.00%, the 5-6 μm of aluminium powder of 60.00%, 1.00% glass dust, the organic intermediate of 22.00%, 2-3 μm of silica flour, the 2-5 μm of boron powder of 0.10%, the class of department 85 of 1.50% of 0.40% put in size barrel, adopting double-planet to be stirred to material is starchiness, then be 12 μm-17.5 μm by the fineness that three-roller is ground to slurry, finally with after 280 order stainless steel sift net filtrations required aluminium paste.
During application, with laser by the SiO on 156mm × 156mm monocrystalline silicon piece
2/ SiN
xback side dielectric film outputs the circular hole that multiple diameter is 100 μm, then slurry with 325 order silk screen printings on this silicon chip, then carry out drying, sintering after test electrical property; Use its peel strength of 3M adhesive tape test, according to aluminium paste on adhesive tape after peeling off remain number judge the quality of adhesion of slurry; Observe the number of the rear aluminium electrode surface aluminium pill of statistics sintering, aluminium bud.
Embodiment two
1), organic intermediate is prepared
According to percentage by weight, the ethyl cellulose of 6.00%, the phenolic resins of 1.00%, terpinol, the butyl carbitol acetate of 24.00%, dibutyl phthalate, the n-butanol of 5.00%, the ethylene glycol phenyl ether of 6.00% of 3.00% of 55.00% are mixed with the raw material of organic intermediate, the raw material of organic intermediate is dropped in reactor, control reaction temperature at 70 DEG C, after dissolving 2h, obtain the organic intermediate of component transparent and homogeneous.
2), glass dust is prepared
According to percentage by weight 65.00% bismuth oxide, 12.00% diboron trioxide, 0.50% antimonous oxide, the silicon dioxide of 4.50%, the zinc oxide of 15.00% and 3.00% aluminium oxide be mixed with the raw material of glass dust, each component dries 3h respectively through 110 DEG C, load after Homogeneous phase mixing in corundum crucible, melting 1h under 1100 DEG C of high temperature in high temperature furnace, the shrend in electron-grade water of melting thing obtains glass dregs, glass slag ball is milled to the glass dust that granularity is 2 μm-5 μm, finally dries and can obtain required lead-free glass powder.
3), aluminium paste is prepared
Percentage by weight according to aluminium paste component: the 2-3 μm of aluminium powder of 10.00%, the 5-6 μm of aluminium powder of 65.00%, the glass dust of 1.00%, organic intermediate, the 2-3 μm of silica flour of 0.20%, aerosil, the 2-5 μm of boron powder of 0.10%, the class of department 85 of 1.00% of 0.20% of 22.50% put in size barrel, adopting double-planet to be stirred to material is starchiness, then be 12 μm-17.5 μm by the fineness that three-roller is ground to slurry, finally with after 280 order stainless steel sift net filtrations required aluminium paste.
During application, with laser by the SiO on 156mm × 156mm monocrystalline silicon piece
2/ SiN
xback side dielectric film outputs the circular hole that multiple diameter is 100 μm, then slurry with 325 order silk screen printings on this silicon chip, then carry out drying, sintering after test electrical property; Use its peel strength of 3M adhesive tape test, according to aluminium paste on adhesive tape after peeling off remain number judge the quality of adhesion of slurry; Observe the number of the rear aluminium electrode surface aluminium pill of statistics sintering, aluminium bud.
Aluminium paste slurry provided by the invention through silk screen printing in back surface passivation on the crystal silicon solar energy battery substrate of local laser perforate, dry, form aluminium back surface field at cell piece back side tapping after sintering, comparatively strong adhesive force is had at non-tapping and passivation layer, aluminium film surface does not have aluminium pill, aluminium bud, not dry linting or come off, excellent electrical property.
Above embodiment is only and technological thought of the present invention is described, can not limit protection scope of the present invention with this, every technological thought proposed according to the present invention, and any change that technical scheme basis is done, all falls within scope; The technology that the present invention does not relate to all is realized by prior art.
Claims (12)
1. for an aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery, it is characterized in that: the component of described aluminium paste and weight percentage are: the organic additive of the micron order aluminium powder of 50.00%-75.00%, the glass dust of 0.50%-2.00%, the organic intermediate of 15.00%-30.00%, the inorganic additive of 0.02-1.00% and 1.00-2.50%; And the component weight percentage sum of above-mentioned aluminium paste is 100%.
2. the aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery according to claim 1, is characterized in that: described glass dust is lead-free glass powder.
3. the aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery according to claim 1 and 2, it is characterized in that: described glass dust is the glass dust of bismuth-boron-silicon-zinc silicate systems, and the component of this glass dust and weight percentage are: the aluminium oxide of the antimonous oxide of the bismuth oxide of 60.00%-75.00%, the diboron trioxide of 8.00%-20.00%, 0.05%-1.50%, the silicon dioxide of 1.00%-8.00%, the zinc oxide of 7.00%-15.00% and 0.50%-7.00%; The component weight percentage sum of above-mentioned glass dust is 100%.
4. the aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery according to claim 3, it is characterized in that: the preparation method of described glass dust is: make each component weight percentage sum of this glass dust be 100% each component accurate weighing of glass dust batching, each component dries rear Homogeneous phase mixing respectively through 110 DEG C-120 DEG C, after mixing under 1000 DEG C of-1200 DEG C of high temperature melting 0.5h-1.5h, then the shrend in electron-grade water of melting thing obtains glass dregs; Glass slag ball is milled to the glass dust that granularity is 2 μm-5 μm, finally dries and obtain lead-free glass powder.
5. the aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery according to claim 1, it is characterized in that: described organic intermediate is a kind of thick liquid formed in a solvent by resin dissolves, described resin is at least one in phenolic resins, the acrylic resin of lower alcohol, ethyl cellulose; Described solvent is at least one in butyl carbitol acetate, terpinol, turpentine oil, dibutyl phthalate, diethylene glycol butyl ether, n-butanol, ethylene glycol phenyl ether.
6. according to claim 1 or 5 for the aluminium paste of laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery, it is characterized in that: the component of described organic intermediate and weight percentage are: the ethyl cellulose of 4.00%-6.00%, the phenolic resins of 2.00%-5.00%, the terpinol of 35.00%-65.00%, the butyl carbitol acetate of 20.00%-35.00%, the dibutyl phthalate of 2.50%-6.50%, the n-butanol of 4.00%-9.50% and the ethylene glycol phenyl ether of 3.00%-10.00%, and the component weight percentage sum of above-mentioned organic intermediate is 100%, drop in reactor by after above-mentioned raw materials accurate weighing batching, control reaction temperature at 60 DEG C-80 DEG C, the organic intermediate of transparent and homogeneous after dissolving 2h-3h, can be obtained.
7. the aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery according to claim 1, is characterized in that: described micron order aluminium powder is the ball aluminum powder that gas phase atomization obtains.
8. the aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery according to claim 1 or 7, it is characterized in that: the particle diameter of described micron order aluminium powder comprises 2 μm-3 μm and 5 μm of-6 μm of two grades, and the weight percentage of two grade particle diameters is: the micron order aluminium powder that the particle diameter of 10.00%-40.00% is the micron order aluminium powder of 2 μm-3 μm, the particle diameter of 60.00%-90.00% is 5 μm-6 μm.
9. the aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery according to claim 1, is characterized in that: described inorganic additive is at least one in micron order silica flour, micron order boron powder, aerosil.
10. the aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery according to claim 1, it is characterized in that: described organic additive is surfactant, surfactant is at least one in lecithin, class 85 of department, castor oil.
11. 1 kinds of preparation methods according to the arbitrary described aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery of claim 1-10, it is characterized in that: the step of described preparation method is: the organic intermediate adding formula ratio in size barrel successively, organic additive, inorganic additive and glass dust carry out preliminary premixed, then adopting double-planet to be stirred to material after adding the micron order aluminium powder of formula ratio is starchiness, then it is 12 μm-17.5 μm by the fineness that three-roller is ground to slurry, finally with after 280 order stainless steel sift net filtrations required aluminium paste.
12. 1 kinds, according to the application of the arbitrary described aluminium paste for laser beam drilling local back contact-passivation emitter crystal silicon solar energy battery of claim 1-10, is characterized in that: with laser by the SiO on monocrystalline silicon piece
2/ SiN
xback side dielectric film outputs multiple circular hole, then aluminium paste slurry with 325 order silk screen printings on this monocrystalline silicon piece, then dry, sinter.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018103163A1 (en) * | 2016-12-09 | 2018-06-14 | 东莞珂洛赫慕电子材料科技有限公司 | Low-melting-point inorganic binder slurry for aluminum substrate and preparation method therefor |
| CN109304951A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | A kind of method of GPP silk-screen printing passivation layer |
| CN109493992A (en) * | 2018-10-15 | 2019-03-19 | 海宁市瑞银科技有限公司 | High adhesion force PERC crystal silicon solar energy battery aluminium paste and preparation method thereof |
| CN109524148A (en) * | 2018-11-29 | 2019-03-26 | 武汉硕美特电子材料有限公司 | A kind of organic additive modified PE RC aluminium paste |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110120535A1 (en) * | 2009-11-25 | 2011-05-26 | E.I. Du Pont De Nemours And Company | Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells |
| CN102576578A (en) * | 2009-10-13 | 2012-07-11 | 东友Fine-Chem股份有限公司 | Aluminum paste for back electrode of solar cell |
| WO2013036689A1 (en) * | 2011-09-07 | 2013-03-14 | E. I. Du Pont De Nemours And Company | Process for the production of lfc-perc silicon solar cells |
| CN103733349A (en) * | 2011-08-11 | 2014-04-16 | E.I.内穆尔杜邦公司 | Aluminium paste with no or poor fire -through capability and use thereof for back electrodes of passivated emitter and rear contact silicon solar cells |
| CN104575685A (en) * | 2015-01-12 | 2015-04-29 | 浙江光隆能源科技股份有限公司 | Crystal silicon solar cell high adhesive force back surface field aluminum electrocondution slurry and preparation method |
-
2015
- 2015-11-30 CN CN201510857362.7A patent/CN105405488A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102576578A (en) * | 2009-10-13 | 2012-07-11 | 东友Fine-Chem股份有限公司 | Aluminum paste for back electrode of solar cell |
| US20110120535A1 (en) * | 2009-11-25 | 2011-05-26 | E.I. Du Pont De Nemours And Company | Aluminum pastes and use thereof in the production of passivated emitter and rear contact silicon solar cells |
| CN103733349A (en) * | 2011-08-11 | 2014-04-16 | E.I.内穆尔杜邦公司 | Aluminium paste with no or poor fire -through capability and use thereof for back electrodes of passivated emitter and rear contact silicon solar cells |
| WO2013036689A1 (en) * | 2011-09-07 | 2013-03-14 | E. I. Du Pont De Nemours And Company | Process for the production of lfc-perc silicon solar cells |
| CN104575685A (en) * | 2015-01-12 | 2015-04-29 | 浙江光隆能源科技股份有限公司 | Crystal silicon solar cell high adhesive force back surface field aluminum electrocondution slurry and preparation method |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018103163A1 (en) * | 2016-12-09 | 2018-06-14 | 东莞珂洛赫慕电子材料科技有限公司 | Low-melting-point inorganic binder slurry for aluminum substrate and preparation method therefor |
| CN109304951A (en) * | 2017-07-26 | 2019-02-05 | 天津环鑫科技发展有限公司 | A kind of method of GPP silk-screen printing passivation layer |
| CN109304951B (en) * | 2017-07-26 | 2021-06-25 | 天津环鑫科技发展有限公司 | Method for GPP screen printing passivation layer |
| CN109493992A (en) * | 2018-10-15 | 2019-03-19 | 海宁市瑞银科技有限公司 | High adhesion force PERC crystal silicon solar energy battery aluminium paste and preparation method thereof |
| CN109524148A (en) * | 2018-11-29 | 2019-03-26 | 武汉硕美特电子材料有限公司 | A kind of organic additive modified PE RC aluminium paste |
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