CN106158986A - A kind of crystal silicon solar cell sheet and preparation method thereof - Google Patents
A kind of crystal silicon solar cell sheet and preparation method thereof Download PDFInfo
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Abstract
For promoting the photoelectric transformation efficiency of crystal silicon solar cell sheet, the invention provides a kind of crystal silicon solar cell sheet, including silicon substrate, the shady face of described silicon substrate is sequentially provided with passivation layer, aluminium back surface field and shady face gate electrode line；Described passivation layer material is boron carbide or cubic boron nitride.Meanwhile, the invention also discloses the preparation method of above-mentioned crystal silicon solar cell sheet.The photoelectric transformation efficiency of the crystal silicon solar cell sheet that the present invention provides is high.
Description
Technical field
The present invention relates to a kind of crystal silicon solar cell sheet and preparation method thereof.
Background technology
With development and the intensified competition of solar energy industry, client is to the efficiency requirements of solar cell increasingly
Height, industry access threshold is also improving, it is therefore desirable to explores more industrialization technology and realizes that solar cell turns
Change the lifting of efficiency.Current solar cell phototropic face technology is very ripe, promotes the concern of conversion efficiency
Point is increasingly turned to the back side for having very big potentiality.Deposit oxygen by ald (ALD) technical back
The back of the body passivation cell changing aluminum passivation layer becomes the previous bright spot of mesh.Passivated emitter and back surface passivation battery
(PERC) it is based primarily upon aluminum oxide for the good passivation effect of P-type silicon piece, solar energy can be obviously improved
Isc and Voc of battery, thus raising efficiency.
The technological process of the crystal silicon solar cell sheet of back of the body passivation at present is typically as follows, (includes at etching procedure
This operation) front identical with the preparation method of common crystal silicon solar cell, after etching, use atomic layer
Deposition technique, at the shady face deposition of aluminium oxide film passivation layer of silicon silicon substrate, is then annealed, then positive and negative
Face all uses common low frequency Induced Plasma chemical gaseous phase depositing process (LP-PECVD) respectively deposition one layer certain
The silicon nitride layer of thickness, positive layer, is then adopted as the protective layer of aluminum oxide as antireflective coating, back layer
With aluminum oxide and the silicon nitride layer at the laser ablation back side so that it is form the groove with one fixed width and interval, carve
After groove, then press common batteries technique printing electrocondution slurry, after sintering, i.e. obtain back of the body passivation crystal silicon solar electricity
Pond.
Using back of the body passivation crystal silicon solar energy battery prepared by current aluminium oxide passivation technique, its back side needs heavy
Long-pending double-layer films, i.e. alumina passivation layer and silicon nitride protective layer, alumina layer need to use ald work
Skill, the equipment price of this technique is expensive, complex process, additionally, use common low frequency Induced Plasma chemistry
Vapour deposition (LP-PECVD) deposited silicon nitride protective layer, then the thickness of silicon nitride layer need to reach 150nm
Above, when otherwise printing aluminum conductive electric slurry in the above and sinter, the glass dust in aluminium paste is in the molten state
Can corrode and pass through silicon nitride layer, cause its destruction to alumina passivation layer, thus weaken passivation layer to electricity
The lifting of pond photoelectric properties, but, owing to silicon nitride layer is non-conductive, groove that aluminium paste is formed by laser ablation
Forming aluminium back surface field, because the area of groove is very little, and silicon nitride layer have bigger thickness, causes battery
Series resistance increase, fill factor, curve factor decline.
Content of the invention
The technical problem to be solved is an up the photoelectric transformation efficiency of crystal silicon solar cell sheet,
A kind of crystal silicon solar cell sheet is provided.
It is as follows that the present invention solves the technical scheme that above-mentioned technical problem used:
There is provided a kind of crystal silicon solar cell sheet, including silicon substrate, the shady face of described silicon substrate sets successively
Have passivation layer, aluminium back surface field and shady face gate electrode line；Described passivation layer material is boron carbide or cubic boron nitride.
Meanwhile, present invention also offers the preparation method of above-mentioned crystal silicon solar cell sheet, including walk as follows
Rapid:
S1, provide the silicon substrate on phototropic face with diffusion layer, silicon substrate shady face depositing silicon boron or
Cubic boron nitride, forms passivation layer；
S2, preparing aluminium back surface field on described passivation layer, described aluminium back surface field runs through described passivation layer, and with silica-based
Body contacts；
S3, preparation and shady face gate electrode line, preparation and expansion on silicon substrate phototropic face in described aluminium back surface field
Dissipate the phototropic face gate electrode line of layer contact.
In the crystal silicon solar cell sheet that the present invention provides, the back side of silicon substrate has only deposited one layer of passivation layer,
And not needing annealing process, the alumina passivation layer comparing current relative maturity adds silicon nitride protective layer technique,
Its preparation technology obtains and simplifies to a certain extent.Meanwhile, the present invention uses DB-PECVD method to prepare boron carbide
Or cubic boron nitride passivation layer, deposition velocity is fast, and silicon substrate temperature is low, and the passivation layer structure obtaining is fine and close,
Good passivation effect, thickness is little, and the short circuit current Isc and open-circuit voltage Voc of battery obtain a certain degree of carrying
Height, therefore photoelectric transformation efficiency is also significantly improved.
Brief description
Fig. 1 is the phototropic face front view of the crystal silicon solar cell sheet of the embodiment of the present invention 1 preparation；
Fig. 2 be in Fig. 1 A-A to sectional view.
Reference in Figure of description is as follows:
1st, phototropic face electrode main grid line；2nd, the secondary grid line of phototropic face electrode；3rd, antireflective coating；4th, diffusion layer；
5th, silicon substrate；6th, passivation layer；7th, aluminium back surface field.
Detailed description of the invention
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearer, with
Lower combination drawings and Examples, are further elaborated to the present invention.It should be appreciated that described herein
Specific embodiment only in order to explain the present invention, be not intended to limit the present invention.
The crystal silicon solar cell sheet that the present invention provides, including silicon substrate, the shady face of described silicon substrate depends on
It secondary is provided with passivation layer, aluminium back surface field and shady face gate electrode line；Described passivation layer material is boron carbide or cube nitrogen
Change boron.
In the present invention, the structure on silicon substrate and silicon substrate phototropic face can use existing structure, for example, institute
State and there is on the phototropic face of silicon substrate diffusion layer and phototropic face gate electrode line successively.
As existing, phototropic face gate electrode line generally includes orthogonal phototropic face electrode main grid line and to light
The secondary grid line of face electrode.Wherein, phototropic face electrode main grid line is relatively thick, negligible amounts.The secondary grid line of phototropic face electrode
Relatively thin, quantity is more.And it is parallel to each other between multiple phototropic face electrode main grid line, multiple phototropic face electrodes
It is parallel to each other between secondary grid line.
Generally, described diffusion layer also has antireflection layer.The thickness of conventional antireflection layer is 70-90nm,
Its material is usually silicon nitride.
Now, phototropic face gate electrode line is positioned on described antireflection layer.
Present invention focuses on the improvement to crystal silicon solar cell sheet shady face structure.Concrete, described
On the shady face of silicon substrate, there is passivation layer.In the present invention, this passivation layer material is boron carbide or cube nitridation
Boron.
According to the present invention, in this crystal silicon solar cell sheet, the back side of silicon substrate has only deposited one layer of passivation
Layer, and do not need annealing process, the alumina passivation layer comparing current relative maturity adds silicon nitride protective layer
Technique, its preparation technology obtains and simplifies to a certain extent.Meanwhile, this passivation layer structure is fine and close, good passivation effect,
Thickness is little, and the short circuit current Isc and open-circuit voltage Voc of battery obtain a certain degree of raising, opto-electronic conversion
Therefore efficiency be also significantly improved.
For above-mentioned passivation layer, for being beneficial to improve the photoelectric transformation efficiency of crystal silicon solar cell sheet further,
Under preferable case, the thickness of described passivation layer is 20-200nm；More preferably 50-100nm.
In the crystal silicon solar cell sheet that the present invention provides, with routine back of the body passivation crystal silicon solar cell sheet
Difference, unprotect layer on this passivation layer, aluminium back surface field is directly arranged on passivation layer.
Concrete, described passivation layer is provided with the first groove, and described first groove passes through passivation layer and extends to
On silicon substrate；Described aluminium back surface field is covered on described passivation layer, and fills described first groove, with described silicon
Matrix contacts.
Now, aluminium back surface field contacts through above-mentioned first groove with silicon substrate, can realize the knot of passivation layer both sides
Structure mutual conduction.
In the case of according to the invention it is preferred to, described passivation layer be provided with multiple be parallel to each other described first recessed
Groove.
In the present invention, under preferable case, the width of described first groove is 20-100 μm, adjacent two first
Distance between the center line of the length direction of groove is 500-2000 μm.
Aluminium back surface field can be effectively formed by above-mentioned first groove.As existing, on the basis of aluminium back surface field,
Shady face gate electrode line is should also have on silicon substrate shady face.In the present invention, above-mentioned shady face gate electrode line is tied
Structure is similar with the structure of existing back of the body passivation crystal silicon solar cell sheet.
As it is known in the art, above-mentioned aluminium back surface field material is usually aluminium, can be prepared by aluminium paste is sintered,
And phototropic face gate electrode line (the phototropic face electrode main grid of above-mentioned shady face gate electrode line and silicon substrate phototropic face
Line and the secondary grid line of phototropic face electrode) material usually silver, sintered preparing can be starched by silver.
The present invention additionally provides the preparation method of above-mentioned crystal silicon solar cell sheet, specifically includes following step
Rapid:
S1, provide the silicon substrate on phototropic face with diffusion layer, silicon substrate shady face depositing silicon boron or
Cubic boron nitride, forms passivation layer；
S2, preparing aluminium back surface field on described passivation layer, described aluminium back surface field runs through described passivation layer, and with silica-based
Body contacts；
S3, in described aluminium back surface field, prepare shady face gate electrode line, preparation and diffusion on silicon substrate phototropic face
The phototropic face gate electrode line of layer contact.
The method that the present invention provides is prepared based on the silicon substrate on phototropic face with diffusion layer.Wherein, to
Have on light face the silicon substrate of diffusion layer can use p-type polysilicon piece through conventional making herbs into wool, diffusion, etching,
Obtain after polishing.Above-mentioned making herbs into wool, diffusion, etching, polishing can use existing method, in the present invention for
Above-mentioned making herbs into wool, diffusion, etching, the concrete technology step of polishing are not particularly limited, and do not repeat them here.
According to the present invention, in above-mentioned steps S1, at shady face depositing silicon boron or the cubic boron nitride of silicon substrate
Method can be double source Plasma Enhanced Chemical Vapor Deposition (PECVD) (DB-PECVD).
Concrete, when depositing silicon boron, carbon source is methane, and boron source is borine, and carrier gas is high pure nitrogen,
Carbon source is 5-20:1 with the flow-rate ratio of boron source.
Under plasmoid, the deposition process of boron carbide can schematically show as follows:
2BH3→BH2-+BH2 -+3H+
3CH4→CH3-+CH2 2-+CH3 -+6H+
BH2-+xCH3-+(2+3x)H+→BCx+(3+4x)H
And when depositing cubic boron nitride, nitrogen source is ammonia, boron source is borine, and carrier gas is high pure nitrogen, nitrogen source
Flow-rate ratio with boron source is 10-30:1.
The deposition process of cubic boron nitride can schematically show as follows:
2BH3→BH2-+BH2 -+3H+
2NH3→NH2-+NH2 -+3H+
BH2-+xNH2-+(2+2x)H+→BNx+(3+3x)H
In the present invention, under preferable case, when the shady face of silicon substrate prepares described passivation layer, described silicon
The temperature of matrix is 50-100 DEG C, and the air pressure in vacuum chamber is 10-100Pa.The method providing according to the present invention
When preparing above-mentioned passivation layer, reaction can be smoothly completed in the case that silicon substrate temperature is relatively low.
In the case of more preferably, when the shady face of silicon substrate prepares described passivation layer, the sedimentation rate of film
For 5-25nm/min.
In the boron carbide of present invention offer or cubic boron nitride passivation layer, crystallite dimension is little, and generally only tens
Nanometer, therefore its passivation layer structure being formed is fine and close, prints aluminium paste, be not easy to be saturated after sintering on it.
In the present invention, the boron carbide being deposited at silicon substrate shady face or cubic boron nitride passivation layer, its thickness
It is preferably 20-200nm, more preferably 50-100nm.
After silicon substrate shady face forms above-mentioned passivation layer, such as step S2, aluminium need to be prepared on described passivation layer
Back surface field, described aluminium back surface field runs through described passivation layer, and contacts with silicon substrate.
In the present invention, the method for preparing aluminium back surface field on above-mentioned passivation layer, can be with existing with pellumina
As the crystal silicon solar cell sheet of passivation layer, its silicon nitride protective layer is prepared the method class of aluminium back surface field
Seemingly.Concrete, in described step S2, after forming passivation layer, use laser ablation passivation layer surface, formed
Run through the first groove of described passivation layer, then print aluminium paste over the passivation layer, make aluminium paste fill described first
Groove, sintered after obtain aluminium back surface field.
As existing, generally pass through laser ablation, passivation layer of the present invention forms multiple being parallel to each other
Described first groove.In the present invention, the width of above-mentioned first groove is preferably 20-100 μm, adjacent two
Distance between the center line of the length direction of the first groove is preferably 500-2000 μm.
It after printing above-mentioned aluminium paste, is baked to.Then shady face gate electrode line is prepared in passivation layer surface.The back of the body
The preparation method of light face gate electrode line can use existing various method.For example, printing and drying first
After aluminium paste in groove, on the direction perpendicular with the first groove length direction, i.e. with silicon substrate phototropic face
The identical direction of the phototropic face electrode main grid line that need to be formed, republishes several continuous print shady faces silver slurry bands, print
The slurry tape number of brush, typically identical with the phototropic face electrode main grid line number that silicon substrate phototropic face need to be formed,
Such as 2-4 bar, preferably 3.By follow-up sintering processes, above-mentioned shady face silver slurry band i.e. forms shady face
Gate electrode line.
After printing shady face silver slurry band, dry, then the phototropic face printing phototropic face silver slurry band at silicon substrate,
Dry in sintering furnace, sintering, i.e. can get crystal silicon solar cell sheet.The print of phototropic face silver slurry band
Dataller's skill, the sintering process in sintering furnace, all technique with current conventional crystal silicon solar cell sheet
Identical.For example, also include before described step S3, the diffusion layer of described silicon substrate uses routine
Pecvd process, the thick silicon nitride film of plating 70-90nm, as antireflective coating, forms antireflection layer；Described
On antireflection layer printing silver slurry, sintered after obtain orthogonal phototropic face electrode main grid line and phototropic face electricity
Extremely secondary grid line.
Described sintering method is: in sintering furnace, preheating temperature be 200-400 DEG C, peak temperature be
It is sintered under conditions of 900-950 DEG C.
Using in the crystal silicon solar cell sheet that present invention process prepares, the back side of silicon substrate only need to sink
Long-pending one layer of passivation layer, and do not need annealing process, the alumina passivation layer comparing current relative maturity adds nitrogen
SiClx protective layer technique, its preparation technology is simplified significantly, and equipment cost is also reduced, and the present invention adopts
Prepare boron carbide by double source Plasma Enhanced Chemical Vapor Deposition (PECVD) (DB-PECVD) method or cubic boron nitride is blunt
Changing layer, deposition velocity is fast, and silicon substrate temperature is low, and the passivation layer structure obtaining is fine and close, and printed aluminium paste exists
After sintering, the damage to passivation layer is few, and passivating back effect is good, the short circuit current Isc of battery and open-circuit voltage
Voc is significantly improved.In general, the opto-electronic conversion of the crystal silicon solar cell sheet that the present invention provides
Efficiency is obviously improved compared to existing.
By the following examples the present invention is further detailed.
Embodiment 1
The present embodiment is used for crystal silicon solar cell sheet disclosed by the invention and preparation method thereof is described.
1st, the preparation of silicon chip before passivation layer is plated
The polysilicon chip specification using is: 156mm × 156mm, thickness is 200 μm, by silicon wafer wool making, expansion
Dissipate, etching after, silicon chip back side is processed by shot blasting, surface must be arrived there is the silicon substrate of diffusion layer.
2nd, the preparation of phototropic face silicon nitride anti-reflecting film
Use common low frequency Induced Plasma chemical gaseous phase deposition (LP-PECVD) plating silicon nitride anti-reflecting film,
Nitrogen source therein is ammonia, and silicon source is silane, and operating frequency is 380kHz, and silicon substrate operating temperature is 440 DEG C,
Ammonia is 12:1 with the flow-rate ratio of silane, and radio-frequency power is 2900W, and sedimentation time is 9.5min, at silicon
Form the silicon nitride anti-reflecting film that thickness is 75-80nm on the diffusion layer of matrix.
3rd, the preparation of passivation layer
Using DB-PECVD plating boron carbide passivation layer, the air pressure in vacuum chamber is 10-20Pa, silica-based body temperature
Degree is maintained at 80 DEG C, and wherein, carbon source uses methane, and boron source uses borine, and carrier gas uses high pure nitrogen, first
Alkane is 10:1 with the flow-rate ratio of borine.Sedimentation time is 10min, obtains the boron carbide that thickness is 90-95nm
Passivation layer.
4th, the preparation of the first groove
Using frequency to be that 200KHz lbg punches passivation layer, exposing silicon substrate, the width of the first groove is
50 μm, the distance between the center line in adjacent first groove length direction is 1000 μm.
5th, printing slurry sintering
The half tone using 250 mesh prints back field aluminum paste (Taiwan Shuo He scientific & technical corporation on the passivation layer of shady face
L210 aluminium paste), printing weight in wet base is 1.40-1.60g, dries；Then silicon substrate use 280 mesh, carry a width of
The half tone of 2.5mm, republishes shady face silver slurry (Dupont company of U.S. PV505 silver slurry) on aluminium paste,
Printing weight in wet base is 40-60mg, dries；The half tone using 400 mesh, live width to be 60 μm at silicon substrate to light
Face printing phototropic face silver slurry (Dupont company of U.S. 17F silver slurry), main gate line is set as three, then enters
Continuous tunnel furnace is dried, preheating temperature be 200-400 DEG C, peak temperature is sintered under conditions of being 920 DEG C.
Aluminium paste in sintering after-opening groove and silicon chip form aluminium back surface field, and shady face silver slurry is formed respectively with phototropic face silver slurry
Shady face gate electrode line and phototropic face gate electrode line.
The crystal silicon solar cell sheet obtaining is designated as S1.Its structure sees Fig. 1 and Fig. 2, wherein, silica-based
Body 5 phototropic face has diffusion layer the 4th, antireflection layer 3 successively, and diffusion layer 4 contacts with silicon substrate 5.Antireflective
Layer 3 be provided with a plurality of run through antireflection layer 3 and contact with diffusion layer 4 phototropic face electrode pair grid line 2.A plurality of
The secondary grid line 2 of phototropic face electrode is parallel to each other.Antireflection layer 3 surface has three phototropic face electricity being parallel to each other
Pole main gate line 1.Article three, phototropic face electrode main grid line 1 grid line 2 secondary with phototropic face electrode is vertical and contacts.
Silicon substrate 5 shady face has passivation layer 6 and aluminium back surface field 7 successively.Aluminium back surface field 7 is covered in passivation layer 6 table
Passivation layer 6 is simultaneously run through in face, contacts with silicon substrate 5.
Embodiment 2
The present embodiment is used for crystal silicon solar cell sheet disclosed by the invention and preparation method thereof is described.
Change the sedimentation time that step 3 in embodiment 1 plates boron carbide passivation layer into 25min, make the thickness of passivation layer
Degree becomes 190-200nm, and remaining is identical with embodiment 1.
The crystal silicon solar cell sheet obtaining is designated as S2.
Embodiment 3
The present embodiment is used for crystal silicon solar cell sheet disclosed by the invention and preparation method thereof is described.
Change the sedimentation time that step 3 in embodiment 1 plates boron carbide passivation layer into 6min, make the thickness of passivation layer
Degree becomes 50-55nm, and remaining is identical with embodiment 1.
The crystal silicon solar cell sheet obtaining is designated as S3.
Embodiment 4
The present embodiment is used for crystal silicon solar cell sheet disclosed by the invention and preparation method thereof is described.
Change the temperature of silicon silicon substrate when step 3 plates boron carbide passivation layer in embodiment 1 into 50 DEG C, deposition
Time changes 25min into, and obtaining passivation layer thickness is 90-95nm.Remaining is identical with embodiment 1.
The crystal silicon solar cell sheet obtaining is designated as S4.
Embodiment 5
The present embodiment is used for crystal silicon solar cell sheet disclosed by the invention and preparation method thereof is described.
Change the temperature of silicon silicon substrate when step 3 plates boron carbide passivation layer in embodiment 1 into 100 DEG C, deposition
Time changes 6min into, and obtaining passivation layer thickness is 90-95nm.Remaining is identical with embodiment 1.
The crystal silicon solar cell sheet obtaining is designated as S5.
Embodiment 6
The present embodiment is used for crystal silicon solar cell sheet disclosed by the invention and preparation method thereof is described.
Changing into step 3 in embodiment 1 plating cubic boron nitride passivation layer, the air pressure in vacuum chamber is 30-50Pa,
Silicon chip silicon substrate temperature is maintained at 80 DEG C, and nitrogen source therein uses ammonia, and boron source uses borine, and carrier gas uses
High pure nitrogen, ammonia is 25:1 with the flow-rate ratio of borine.Sedimentation time is 12min, obtains passivation layer thickness and is
90-95nm.Remaining is identical with embodiment 1.
The crystal silicon solar cell sheet obtaining is designated as S6.
Embodiment 7
The present embodiment is used for crystal silicon solar cell sheet disclosed by the invention and preparation method thereof is described.
Change the width of the first groove of step 4 in embodiment 1 into 100 μm, the length of adjacent first groove
The distance between center line on direction changes 500 μm into.Remaining is identical with embodiment 1.
The crystal silicon solar cell sheet obtaining is designated as S7.
Embodiment 8
The present embodiment is used for crystal silicon solar cell sheet disclosed by the invention and preparation method thereof is described.
Change the width of the first groove of step 4 in embodiment 1 into 20 μm, the length side of adjacent first groove
The distance between center line upwards changes 2000 μm into.Remaining is identical with embodiment 1.
The crystal silicon solar cell sheet obtaining is designated as S8.
Comparative example 1
This comparative example is for comparative illustration crystal silicon solar cell sheet disclosed by the invention and preparation method thereof.
1st, the preparation of silicon substrate
The polysilicon chip specification using is: 156mm × 156mm, thickness is 200 μm, by silicon wafer wool making, expansion
Dissipate, etching after, silicon chip back side is processed by shot blasting.Surface must be arrived there is the silicon substrate of diffusion layer.
2nd, the preparation of alumina passivation layer
Use atomic layer deposition apparatus, using trimethyl aluminium, deionized water as the zinc source needed for deposition and oxygen source.
Now, silicon substrate temperature is 250 DEG C, and sedimentation time is 10 seconds, the deposition of thick of the alumina passivation layer obtaining
Degree is 5-8nm, then makes annealing treatment under oxygen atmosphere, and annealing temperature is 550 DEG C, annealing time
For 10min.
3rd, the preparation of phototropic face silicon nitride anti-reflecting film
Identical with the technique of the employing common PE CVD plating silicon nitride anti-reflecting film in step 2 in embodiment 1.
4th, the preparation of shady face silicon nitride protective layer
Use common PE CVD plating silicon nitride protective layer as the protective layer of alumina passivation layer, nitrogen source therein
For ammonia, silicon source is silane, and coating film thickness is 140-150nm.
5th, the preparation of the first groove
Identical with the step 3 in embodiment 1.
6th, printing slurry sintering
Identical with the step 4 in embodiment 1.
The crystal silicon solar cell sheet obtaining is designated as DS1.
Comparative example 2
This comparative example is for comparative illustration crystal silicon solar cell sheet disclosed by the invention and preparation method thereof.
1st, the preparation of the silicon chip of coated with antireflection film
Use p-type polysilicon piece specification be: 156mm × 156mm, thickness is 200 μm, by silicon wafer wool making,
After diffusion, etching, surface must be arrived there is the silicon substrate of diffusion layer.
2nd, the preparation of phototropic face silicon nitride anti-reflecting film
Identical with the technique of the employing common PE CVD plating silicon nitride anti-reflecting film in step 2 in embodiment 1.
3rd, printing slurry sintering
Use 280 mesh, the half tone with a width of 2.5mm, take four sections of three line system, at the shady face of silicon substrate
Printing shady face silver slurry (Dupont company of U.S. PV505 silver slurry), printing weight in wet base is 35-50mg, dries；
Use the half tone of 250 mesh in remaining printed portions back field aluminum paste (the Taiwan Shuo He scientific & technical corporation of shady face silver slurry
108C aluminium paste), printing weight in wet base is 1.30-1.50g, dries；The half tone using 400 mesh, live width to be 60 μm
At phototropic face printing phototropic face silver slurry (Dupont company of U.S. 17F silver slurry) of silicon substrate, main gate line sets
Be three, then enter in continuous tunnel furnace and dry, preheating temperature be 200-400 DEG C, peak temperature be 920 DEG C
Under the conditions of be sintered, i.e. obtain crystal silicon solar cell sheet after coming out of the stove.
The crystal silicon solar cell sheet obtaining is designated as DS2.
Performance test
Following performance is carried out to above-mentioned crystal silicon solar cell sheet S1-S18 and DS1-DS2 preparing
Test:
Surface appearance: whether the shady face observing solar battery sheet has the phenomenons such as aluminium blister, aluminium pill, as without then
It is designated as OK, be otherwise designated as NG.
Short circuit current (Isc, unit: A), open-circuit voltage (Voc, unit: V), peak power (Pmpp,
Unit W), fill factor, curve factor (FF), electricity conversion (Eta, unit: %): the above-mentioned electricity of cell piece
Performance parameter uses solar cell piece special test equipment, as single flash operation simulator is tested.Test-strips
Part is standard test condition (STC): light intensity: 1000W/m2；Spectrum: AM1.5；Temperature: 25 DEG C.Survey
Method for testing is carried out according to IEC904-1.
The test result obtaining inserts table 1.
Table 1
| Sample | Surface appearance | Isc | Uoc | Pmpp | FF | Eta |
| S1 | OK | 8.7841 | 0.6365 | 4.4429 | 79.60 | 18.362 |
| S2 | OK | 8.6821 | 0.6353 | 4.3979 | 79.12 | 18.151 |
| S3 | OK | 8.5619 | 0.6267 | 4.3219 | 79.85 | 17.799 |
| S4 | OK | 8.7834 | 0.6357 | 4.4372 | 79.23 | 18.255 |
| S5 | OK | 8.6725 | 0.6316 | 4.4319 | 79.18 | 17.812 |
| S6 | OK | 8.7238 | 0.6342 | 4.3868 | 78.17 | 17.913 |
| S7 | OK | 8.7587 | 0.6360 | 4.4076 | 79.10 | 18.114 |
| S8 | OK | 8.7571 | 0.6340 | 4.3556 | 78.04 | 17.803 |
| DS1 | OK | 8.7418 | 0.6318 | 4.3123 | 78.50 | 17.765 |
| DS2 | OK | 8.5161 | 0.6247 | 4.2685 | 80.34 | 17.519 |
From upper table embodiment 1-8 compare with the test result of comparative example 1-2 it can be seen that use double source etc. from
Sub-chemical vapour deposition technique (DB-PECVD) prepares boron carbide or cubic boron nitride as passivation layer, silica-based
The shady face of body only need to deposit one layer of passivation layer, it is not necessary to separately adds protective layer, compares current aluminium oxide passivation
Layer adds the crystal silicon solar cell sheet (comparative example 1) of the back surface passivation that silicon nitride protective layer technique obtains,
Its technical process obtains a certain degree of simplification, and the photoelectric transformation efficiency of battery has also promoted, and with commonly
Crystal silicon solar cell sheet (comparative example 2) is compared, the short circuit current Isc of crystal silicon solar cell sheet and
Open-circuit voltage Voc is improved largely, and the photoelectric transformation efficiency of battery is significantly improved.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all at this
Any modification, equivalent and the improvement etc. made within bright spirit and principle, should be included in the present invention
Protection domain within.
Claims (16)
1. a crystal silicon solar cell sheet, it is characterised in that include silicon substrate, the back of the body of described silicon substrate
Light face is sequentially provided with passivation layer, aluminium back surface field and shady face gate electrode line；Described passivation layer material be boron carbide or
Cubic boron nitride.
2. crystal silicon solar cell sheet according to claim 1, it is characterised in that described passivation layer
Thickness be 20-200nm.
3. crystal silicon solar cell sheet according to claim 1 and 2, it is characterised in that described blunt
Changing layer and being provided with the first groove, described first groove passes through passivation layer and extends on silicon substrate；
Described aluminium back surface field is covered on described passivation layer, and fills described first groove, connects with described silicon substrate
Touch.
4. crystal silicon solar cell sheet according to claim 3, it is characterised in that described passivation layer
It is provided with multiple described first groove being parallel to each other；The width of described first groove is 20-100 μm, adjacent
Distance between the center line of the length direction of two the first grooves is 500-2000 μm.
5. the crystal silicon solar cell sheet according to any one in claim the 1st, 2 or 4, it is special
Levy and be, the phototropic face of described silicon substrate has diffusion layer and phototropic face gate electrode line successively；Described diffusion
Also having antireflection layer on layer, described antireflection layer material is silicon nitride, and the thickness of described antireflection layer is
70-90nm。
6. crystal silicon solar cell sheet according to claim 5, it is characterised in that described phototropic face
Gate electrode line is positioned on described antireflection layer；Described phototropic face gate electrode line includes orthogonal phototropic face electricity
Pole main gate line and the secondary grid line of phototropic face electrode.
7. the preparation method of crystal silicon solar cell sheet as claimed in claim 1, it is characterised in that bag
Include following steps:
S1, provide the silicon substrate on phototropic face with diffusion layer, silicon substrate shady face depositing silicon boron or
Cubic boron nitride, forms passivation layer；
S2, preparing aluminium back surface field on described passivation layer, described aluminium back surface field runs through described passivation layer, and with silica-based
Body contacts；
S3, in described aluminium back surface field, prepare shady face gate electrode line, preparation and diffusion on silicon substrate phototropic face
The phototropic face gate electrode line of layer contact.
8. preparation method according to claim 7, it is characterised in that in described step S1, uses
Double source Plasma Enhanced Chemical Vapor Deposition (PECVD), at the shady face depositing silicon boron of silicon substrate, forms passivation layer；Wherein,
Carbon source is methane, and boron source is borine, and carrier gas is high pure nitrogen, and carbon source is 5-20:1 with the flow-rate ratio of boron source.
9. preparation method according to claim 7, it is characterised in that in described step S1, uses
Double source Plasma Enhanced Chemical Vapor Deposition (PECVD), at the shady face deposition cubic boron nitride of silicon substrate, forms passivation layer；
Wherein, nitrogen source is ammonia, and boron source is borine, and carrier gas is high pure nitrogen, and nitrogen source with the flow-rate ratio of boron source is
10-30:1。
10. the preparation method according to any one in claim 7-9, it is characterised in that at silicon substrate
Shady face on when preparing described passivation layer, the temperature of described silicon substrate is 50-100 DEG C, the gas in vacuum chamber
Pressure is 10-100Pa.
11. preparation methods according to claim 10, it is characterised in that on the shady face of silicon substrate
When preparing described passivation layer, the sedimentation rate of film is 5-25nm/min.
12. preparation methods according to claim 7-9, any one in 11, it is characterised in that at silicon
On the shady face of matrix, the thickness of the passivation layer of preparation is 20-200nm.
13. preparation methods according to claim 7, it is characterised in that in described step S2, form
After passivation layer, use laser ablation passivation layer surface, form the first groove running through described passivation layer, then
Print aluminium paste over the passivation layer, make aluminium paste be packed into described first groove, sintered after obtain aluminium back surface field.
14. preparation methods according to claim 13, it is characterised in that by laser ablation, in institute
State and on passivation layer, form multiple described first groove being parallel to each other；The width of described first groove is
20-100 μm, the distance between the center line of the length direction of adjacent two the first grooves is 500-2000 μm.
15. preparation methods according to claim 10, it is characterised in that before described step S3 also
Including, the diffusion layer of described silicon substrate plates silicon nitride, forms antireflection layer；
On described antireflection layer printing silver slurry, sintered after obtain orthogonal phototropic face electrode main grid line
The secondary grid line with phototropic face electrode.
16. preparation methods according to any one in claim 13 or 15, it is characterised in that institute
Stating sintering method is: in sintering furnace, preheating temperature be 200-400 DEG C, peak temperature be 900-950 DEG C
Under conditions of be sintered.
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