CN111446327A - Novel printing process of solar cell - Google Patents
Novel printing process of solar cell Download PDFInfo
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- CN111446327A CN111446327A CN202010126361.6A CN202010126361A CN111446327A CN 111446327 A CN111446327 A CN 111446327A CN 202010126361 A CN202010126361 A CN 202010126361A CN 111446327 A CN111446327 A CN 111446327A
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- silicon wafer
- printing
- solar cell
- printing process
- novel
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- 238000007639 printing Methods 0.000 title claims abstract description 45
- 238000000034 method Methods 0.000 title claims abstract description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 59
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 59
- 239000010703 silicon Substances 0.000 claims abstract description 59
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 7
- 238000000151 deposition Methods 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims abstract description 4
- 238000005245 sintering Methods 0.000 claims abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 9
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- 238000002310 reflectometry Methods 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 239000013585 weight reducing agent Substances 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 239000002131 composite material Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- -1 silver aluminum Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses a novel printing process of a solar cell, which comprises the following steps: texturing a silicon wafer; performing thermal diffusion on the silicon wafer, forming oxide layers on the front surface and the back surface of the silicon wafer, and forming a PN junction; removing PN junctions at the edge of the silicon wafer; removing an oxide layer on the front side of the silicon wafer; depositing a passivation layer on the back surface of the silicon wafer; plating antireflection films on the front side and the back side of the silicon wafer; laser grooving is carried out on the back of the silicon wafer; printing a full aluminum back surface field on the back surface of the silicon wafer; printing a back electrode on the back of the silicon wafer; printing a positive electrode on the front surface of the silicon wafer; and (4) sintering at a high temperature. Compared with the traditional process of printing the back electrode first and then printing the aluminum back field, the process has the advantages that the complete aluminum back field can be formed, the phenomenon that the back electrode is directly contacted with the silicon wafer to increase the composite influence on the electrical property is avoided, overprinting of the back electrode and the aluminum back field is not required to be considered, and the back electrode can be flexibly arranged as required.
Description
Technical Field
The invention relates to a solar cell technology, in particular to a novel printing process of a solar cell.
Background
In recent years, the requirements of photovoltaic leaders, super runners and other projects on the efficiency of the battery are higher and higher, and the efficiency of the monocrystalline silicon battery is urgent in order to further improve the market share of the monocrystalline silicon battery.
The development of the photovoltaic industry to date improves the battery efficiency through technical innovation, and is a core power for promoting the continuous reduction of the power generation cost of the solar battery. The technical innovation can be broadly divided into the following two categories:
one is to improve the battery design by changing the battery structure, and to obtain efficiency improvement. For example, the PERC battery, which has recently become the mainstream in the industry, introduces a passivation structure on the back of the battery, reduces the minority carrier recombination rate on the back, and improves the internal reflectivity, thereby improving the efficiency of the battery. However, such technological innovations require the introduction of new production processes and equipment, with consequent fixed investments, more complex production flows and higher production costs.
Another is to obtain more excellent battery performance at lower cost through upgrading of chemical consumables. For example, high sheet resistance silver paste is introduced, so that high sheet resistance diffusion of the front side of the battery is possible, auger recombination is reduced, and the efficiency of the battery is improved. Because the complete aluminum back surface field can avoid the situation that the back silver is directly contacted with the silicon chip to compound and influence the electrical property, and the innovation of chemical consumables does not need newly designed equipment and process flows, the investment risk is lower, the effect is more quick, and the aluminum back surface field is widely welcomed and concerned by the industry.
Disclosure of Invention
The invention aims to provide a novel printing process of a solar cell, which can form a complete aluminum back surface field without considering overprinting of a back electrode and the aluminum back surface field, and the back electrode can be flexibly arranged as required.
The purpose of the invention is realized by the following technical scheme: a novel printing process of a solar cell is characterized by comprising the following steps:
⑴ texturing the silicon wafer to form antireflection texture on the front and back sides;
⑵ performing thermal diffusion on the silicon wafer obtained in step ⑴, forming oxide layers on the front side and the back side of the silicon wafer, and forming PN junctions;
⑶ removing PN junction at the edge of the silicon wafer obtained from step ⑵;
⑷ removing the oxide layer on the front side of the silicon wafer from step ⑶;
⑸ depositing a passivation layer on the back side of the silicon wafer resulting from step ⑷;
⑹ plating antireflection films on the front and back sides of the silicon wafer from step ⑸;
⑺ laser grooving the back side of the silicon wafer from step ⑹;
⑻ printing an all aluminum back field on the back side of the silicon wafer resulting from step ⑺;
⑼ printing a back electrode on the back side of the silicon wafer from step ⑻;
⑽ printing a positive electrode on the front side of the silicon wafer resulting from step ⑼;
⑾ the silicon wafer from step ⑽ was subjected to a high temperature sintering.
Compared with the traditional process of printing the back electrode first and then printing the aluminum back field on the silicon chip, the process of printing the back electrode first and then printing the aluminum back field on the silicon chip not only can form a complete aluminum back field and avoid the situation that the back electrode is directly contacted with the silicon chip so as to increase the composite influence on the electrical property, but also does not need to consider the overprinting of the back electrode and the aluminum back field, and the back electrode can be more flexibly and changeably arranged according to the requirement.
In a preferred embodiment of the present invention, the passivation layer is an aluminum oxide film having a thickness of 4 to 12 nm.
In a preferred embodiment of the present invention, the antireflection film is a silicon nitride film, the film thickness of the front silicon nitride film is 70 to 90nm, the film thickness of the back silicon nitride film is 100 to 130nm, the reflectance of the front antireflection film is 4 to 9%, and the refractive index is 1.8 to 2.2%.
In a preferred embodiment of the present invention, in the step ⑴, the silicon wafer is a lightly doped p-type monocrystalline silicon wafer, the weight reduction range of texturing is 0.5 to 0.8g, and the reflectivity is 8 to 18%.
In the step ⑵, the silicon wafer is placed in a furnace tube at 500-800 ℃ for phosphorus diffusion for 5-50 min.
In a preferred embodiment of the present invention, in the step ⑴, the resistivity of the p-type single crystal silicon wafer is 0.1 to 6 Ω · cm.
In a preferred embodiment of the present invention, in the step ⑻, the screen printing is performed on the full aluminum back surface field, the printing speed is 100 to 400mm/S, the printing pressure is 30 to 90N, and the screen pitch is 1.2 to 2.8 mm.
In a preferred embodiment of the present invention, in the step ⑼, the screen printing is performed on the back electrode at a printing speed of 100 to 400mm/S, a printing pressure of 30 to 90N, and a screen pitch of 1.2 to 2.8 mm.
Compared with the prior art, the invention has the following remarkable effects:
⑴ the invention prints the aluminum back field on the silicon chip first, then prints the back electrode, compared with the traditional technology of printing the back electrode first and then printing the aluminum back field, the invention can form the complete aluminum back field, avoid the back silver electrode directly contacting with the silicon chip to increase the composite influence on the electrical performance, and also, the overprinting of the back electrode and the aluminum back field does not need to be considered, the back electrode can be flexibly arranged according to the requirement.
⑵ the invention does not need to add new designed equipment and process flow, has lower investment risk and obvious economic benefit.
⑶ the invention is applicable to the manufacture of various types of solar cells, such as P-type cells, N-type cells, etc.
Detailed Description
The invention relates to a novel printing process of a solar cell, which specifically comprises the following steps:
⑴, selecting a lightly doped p-type monocrystalline silicon wafer with the resistivity of 0.1-6 omega cm, and texturing the p-type silicon wafer to form pyramid-shaped antireflection textured surfaces on the front surface and the back surface of the p-type silicon wafer, wherein the weight reduction range of texturing is 0.5-0.8g, and the reflectivity (full wave band 300-1200nm) range is 8-18%;
⑵, placing the silicon wafer obtained in the step ⑴ in a furnace tube at 500-800 ℃ for phosphorus diffusion for 5-50 min, forming an n-type layer on the surface of the silicon wafer, generating an oxide layer, namely a PSG layer, and forming a PN junction, wherein the diffusion sheet resistance is 100-180;
⑶ removing PN junction at the edge of the silicon wafer obtained in step ⑵, wherein the specific removing method can adopt the existing methods of plasma etching, laser etching edge or chemical etching, etc.;
⑷, removing the PSG layer on the front side of the silicon wafer obtained in step ⑶, wherein the removing method can be the prior art, such as chemical etching method;
⑸, depositing a passivation layer-aluminum oxide film on the back surface of the silicon wafer obtained in the step ⑷ by adopting A L D or PECVD, wherein the film thickness is 4-12 nm;
⑹ plating antireflection film-silicon nitride film on the front and back of the silicon wafer obtained in step ⑸, wherein the film thickness of the front silicon nitride film is 70-90 nm, the film thickness of the back silicon nitride film is 100-130 nm, the reflectivity of the front antireflection film is 4% -9% (whole band 300-1200nm), and the refractive index is 1.8-2.2%;
⑺ laser grooving the back side of the silicon wafer from step ⑹;
⑻ screen printing a full aluminum back field on the back surface of the silicon chip obtained in the step ⑺, wherein the printing speed is 100-400mm/S, the printing pressure is 30-90N, and the screen distance is 1.2-2.8 mm;
⑼ screen printing back electrode on the back surface of the silicon chip (above the full aluminum back field) obtained in step ⑺, wherein the metal paste is silver aluminum paste, the printing speed is 100-400mm/S, the printing pressure is 30-90N, and the screen interval is 1.2-2.8 mm;
⑽, screen printing a positive electrode on the front surface of the silicon chip obtained in the step ⑼, wherein the adopted metal slurry is silver slurry;
⑾ the silicon wafer from step ⑽ is rapidly sintered at high temperature in a sintering furnace.
The electrical properties of the novel solar cell prepared in this example were tested for the open circuit voltage (Uoc), short circuit current (Isc), series resistance (Rs), parallel resistance (Rsh), Fill Factor (FF), conversion efficiency (Ncell) and reverse current 2(Irev2), and the comparative example was different from this example in that: comparative example a back electrode was printed first followed by a full aluminum back field.
The electrical properties of the selective emitter cells prepared from the present example and the comparative example, respectively, were compared to gain, and the test results are as follows:
(Table 1)
As can be seen from table 1, the electrical properties of the solar cell prepared in this example are significantly improved compared to the selective emitter cell prepared in the comparative example.
The present invention is not limited to the above embodiments, and according to the above-mentioned technical knowledge and conventional means of the present invention, the present invention can be applied to the manufacture of other types of solar cells without departing from the basic technical idea of the present invention, and therefore, the present invention can be modified, replaced or changed in various other ways, and fall within the scope of the appended claims.
Claims (9)
1. A novel printing process of a solar cell is characterized by comprising the following steps:
⑴ texturing the silicon wafer to form antireflection texture on the front and back sides;
⑵ performing thermal diffusion on the silicon wafer obtained in step ⑴, forming oxide layers on the front side and the back side of the silicon wafer, and forming PN junctions;
⑶ removing PN junction at the edge of the silicon wafer obtained from step ⑵;
⑷ removing the oxide layer on the front side of the silicon wafer from step ⑶;
⑸ depositing a passivation layer on the back side of the silicon wafer resulting from step ⑷;
⑹ plating antireflection films on the front and back sides of the silicon wafer from step ⑸;
⑺ laser grooving the back side of the silicon wafer from step ⑹;
⑻ printing an all aluminum back field on the back side of the silicon wafer resulting from step ⑺;
⑼ printing a back electrode on the back side of the silicon wafer from step ⑻;
⑽ printing a positive electrode on the front side of the silicon wafer resulting from step ⑼;
⑾ the silicon wafer from step ⑽ was subjected to a high temperature sintering.
2. The novel solar cell printing process of claim 1, wherein: the passivation layer is an aluminum oxide film, and the thickness of the film is 4-12 nm.
3. The novel solar cell printing process of claim 2, characterized in that: the antireflection film is a silicon nitride film, the film thickness of the front silicon nitride film is 70-90 nm, and the film thickness of the back silicon nitride film is 100-130 nm.
4. The novel solar cell printing process of claim 3, wherein: the reflectivity of the front antireflection film is 4-9%, and the refractive index is 1.8-2.2%.
5. The novel solar cell printing process as claimed in claim 4, wherein in the step ⑴, the silicon wafer is a lightly doped p-type monocrystalline silicon wafer, the weight reduction range of texturing is 0.5-0.8g, and the reflectivity is 8-18%.
6. The novel solar cell printing process according to claim 5, wherein in the step ⑵, the silicon wafer is placed in a furnace tube at 500-800 ℃ for phosphorus diffusion for 5-50 min.
7. The novel solar cell printing process according to claim 6, wherein in the step ⑴, the resistivity of the p-type monocrystalline silicon wafer is 0.1-6 Ω -cm.
8. The novel printing process of the solar cell as claimed in claim 7, wherein in the step ⑻, the screen printing is performed on the full aluminum back surface field at a printing speed of 100-400mm/S, a printing pressure of 30-90N and a screen spacing of 1.2-2.8 mm.
9. The novel solar cell printing process of claim 8, wherein in the step ⑼, the back electrode is screen-printed at a printing speed of 100-400mm/S and a printing pressure of 30-90N and a screen pitch of 1.2-2.8 mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010126361.6A CN111446327A (en) | 2020-02-28 | 2020-02-28 | Novel printing process of solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010126361.6A CN111446327A (en) | 2020-02-28 | 2020-02-28 | Novel printing process of solar cell |
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| CN111446327A true CN111446327A (en) | 2020-07-24 |
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| CN202010126361.6A Pending CN111446327A (en) | 2020-02-28 | 2020-02-28 | Novel printing process of solar cell |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569438A (en) * | 2012-01-31 | 2012-07-11 | 乐山职业技术学院 | Solar cell capable of saving silver paste and preparation process thereof |
| CN105185851A (en) * | 2015-09-06 | 2015-12-23 | 浙江晶科能源有限公司 | Back passivation solar cell and preparation method thereof |
| CN105226112A (en) * | 2015-09-25 | 2016-01-06 | 中节能太阳能科技（镇江）有限公司 | A kind of preparation method of efficient crystal silicon solar batteries |
| CN110277459A (en) * | 2019-06-19 | 2019-09-24 | 南通天盛新能源股份有限公司 | A kind of preparation method of P-type crystal silicon rear electrode |
| CN110459343A (en) * | 2019-06-19 | 2019-11-15 | 南通天盛新能源股份有限公司 | A kind of full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver paste |
-
2020
- 2020-02-28 CN CN202010126361.6A patent/CN111446327A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569438A (en) * | 2012-01-31 | 2012-07-11 | 乐山职业技术学院 | Solar cell capable of saving silver paste and preparation process thereof |
| CN105185851A (en) * | 2015-09-06 | 2015-12-23 | 浙江晶科能源有限公司 | Back passivation solar cell and preparation method thereof |
| CN105226112A (en) * | 2015-09-25 | 2016-01-06 | 中节能太阳能科技（镇江）有限公司 | A kind of preparation method of efficient crystal silicon solar batteries |
| CN110277459A (en) * | 2019-06-19 | 2019-09-24 | 南通天盛新能源股份有限公司 | A kind of preparation method of P-type crystal silicon rear electrode |
| CN110459343A (en) * | 2019-06-19 | 2019-11-15 | 南通天盛新能源股份有限公司 | A kind of full Al-BSF crystal silicon solar energy battery low-temperature sintering type back side silver paste |
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Application publication date: 20200724 |
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