CN105185851A - Back passivation solar cell and preparation method thereof - Google Patents
Back passivation solar cell and preparation method thereof Download PDFInfo
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- CN105185851A CN105185851A CN201510559397.2A CN201510559397A CN105185851A CN 105185851 A CN105185851 A CN 105185851A CN 201510559397 A CN201510559397 A CN 201510559397A CN 105185851 A CN105185851 A CN 105185851A
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- 238000002161 passivation Methods 0.000 title claims abstract description 63
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 184
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 92
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 92
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 74
- 239000010703 silicon Substances 0.000 claims abstract description 74
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 58
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 58
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 23
- 238000005245 sintering Methods 0.000 claims abstract description 23
- 230000003647 oxidation Effects 0.000 claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims abstract description 10
- 238000007639 printing Methods 0.000 claims abstract description 10
- 230000005684 electric field Effects 0.000 claims description 25
- 230000008021 deposition Effects 0.000 claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- 238000009792 diffusion process Methods 0.000 claims description 10
- 235000008216 herbs Nutrition 0.000 claims description 10
- 210000002268 wool Anatomy 0.000 claims description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 238000007650 screen-printing Methods 0.000 claims description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 11
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract description 3
- 238000002310 reflectometry Methods 0.000 abstract description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract 4
- 230000031700 light absorption Effects 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 13
- 238000004062 sedimentation Methods 0.000 description 9
- 238000005234 chemical deposition Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000003595 mist Substances 0.000 description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 3
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 3
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000007669 thermal treatment Methods 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a back passivation solar cell and a preparation method thereof. The method comprises the following steps: (1) carrying out texturing, diffusing and etching on a P-type silicon wafer; (2) carrying out oxidation on the P-type silicon wafer forming an N-type emitter, and forming a silicon dioxide layer on the front surface and the back surface of the P-type silicon wafer respectively; (3) depositing the silicon dioxide layer on the surface of the silicon dioxide on the back surface by plasma enhanced chemical vapor deposition (PECVD), and then depositing silicon nitride to form a back passivation layer; (4) depositing the silicon nitride on the surface of the silicon dioxide layer on the front surface by PECVD to form a passivation film; and (5) slotting and sintering the back surface of the P-type silicon wafer with the passivation film formed thereon to form a local aluminum back surface field, and then printing the back surface field, a back electrode and a positive electrode. Compared with the prior art, each silicon nitride layer prepared by PECVD contains a lot of hydrogen atoms and saturable dangling bonds; absorption of light with a long wavelength is increased by relatively high back reflectivity; collection of a current carrier near the back surface is improved; and the service lifetime of the current carrier is prolonged by passivation.
Description
Technical field
The invention belongs to technical field of solar batteries, particularly relate to a kind of passivating back solar cell and preparation method thereof.
Background technology
At present, along with environmental problem and energy problem obtain the concern of more and more people, solar cell is as a kind of clean energy, and people have entered into new stage to its research and development.High efficiency, low cost is the main target that current silicon solar cell is pursued.For reducing crystal silicon cost, the photovoltaic industry of fierceness of meeting competition, crystal silicon battery thickness is more and more thinner, because crystalline silicon is gap band material, the absorption coefficient of light is little, the loss that caused by transmitted light can be increased by the reduction of silicon wafer thickness, so in crystal silicon day by day thinning today, based on the high-efficiency battery technology Shi Ge large enterprises of thinner crystal silicon and the research emphasis of efficient mechanism.At present, main study hotspot has HIT battery, WMT battery, N-type double-side cell, back of the body passivation cell etc.
Wherein, PERC battery and emitter and back side passivation on double surfaces solar cell a kind ofly can solve quantum efficiency that thin slice brings very well and to reduce and back side compound increases the technological approaches of problem.Compare the solar battery sheet that traditional handicraft is produced, PERC cell backside replaces silk screen printing ALBSF with one deck or overlayer passivation film, overleaf passivation film carries out laser open window afterwards, passivation film after windowing prints electrode, make metal electrode and silicon form ohmic contact derived current by position of windowing, all the other techniques are substantially identical with conventional solar cell technique.Than conventional aluminium back surface field polycrystal silicon cell, PERC structure battery is all significantly improved in open circuit voltage Voc, short-circuit current density Jsc, conversion efficiency.
The method preparing PERC battery commonplace is face to face: aluminium oxide/silicon nitride passivation is prepared at the back side, then uses lbg.Although this structure possesses good passivation and back side internal reflection effect, the preparation of aluminium oxide is its key point and difficult point.First, the equipment for the preparation of aluminium oxide is very expensive, causes the production cost carrying on the back passivation solar cell significantly to rise; Secondly, the raw material prepared needed for alumina layer are trimethyl aluminium (TMA), are a kind of extremely inflammable and explosive materials, run into air or water all can burn rapidly, in use be all great potential safety hazard in storing process.
Application number be the Chinese patent of CN201410854107.2 disclose a kind of PEVCD of employing prepare solar energy the back of the body passivation cell back of the body passivation film method.This invention adopts PECVD to prepare the back of the body passivation film of solar energy back of the body passivation cell, because certain thickness SiO introduced by bottom
xlayer, can effectively reduce silicon chip surface interfacial state, improves surface passivation effect; Top layer adopts single or multiple lift SiN
xcan the good SiO of available protecting
xlayer, and SiO
x+ SiN
xlayer can also extend the distance of incident ray, strengthens the long-wave response of crystal silicon battery, makes comparatively conventional batteries open circuit voltage and the short circuit current raising of back of the body passivation crystal silicon battery, thus improves the conversion efficiency of battery.But the method directly adopts PECVD to prepare one deck SiO overleaf
xlayer, causes the uniformity of this rete to be difficult to control and the passivation effect played is not obvious.
Summary of the invention
In view of this, the technical problem to be solved in the present invention is to provide a kind of passivating back solar cell and preparation method thereof, and passivating back solar battery back reflectivity prepared by the method is higher.
The invention provides a kind of passivating back solar cell, comprising: back electrode, full aluminum back electric field, backside passivation layer, local aluminum back surface field, P-type silicon, N-type emitter, passivating film and positive electrode;
Described back electrode, full aluminum back electric field, backside passivation layer, P-type silicon, N-type emitter are connected from the bottom to top successively with passivating film;
Described full aluminum back electric field is connected with described P-type silicon by described local aluminum back surface field;
Described positive electrode is arranged on passivating film, and is connected with described N-type emitter by sintering;
Described backside passivation layer comprises silicon dioxide layer and silicon nitride layer, and described silicon dioxide layer is connected with described P-type silicon, and described silicon nitride layer is connected with described full aluminum back electric field; Described silicon dioxide layer comprises the silicon dioxide layer and the silicon dioxide layer that formed of plasma activated chemical vapour deposition that oxidation formed;
Described passivating film comprises silicon dioxide layer and silicon nitride layer, and described silicon dioxide layer is connected with described N-type emitter.
Preferably, the thickness of the silicon dioxide layer that the oxidation in described backside passivation layer is formed is 5 ~ 10nm.
Preferably, in described backside passivation layer, the thickness of the silicon dioxide layer that plasma activated chemical vapour deposition is formed is 20 ~ 30nm.
Preferably, the thickness of the silicon nitride layer in described backside passivation layer is 100 ~ 150nm.
Preferably, in described passivating film, the thickness of silicon dioxide layer is 5 ~ 10nm.
Preferably, in described passivating film, the thickness of silicon nitride layer is 75 ~ 95nm.
Present invention also offers a kind of preparation method of passivating back solar cell, comprise the following steps:
1) P-type silicon sheet is carried out making herbs into wool, diffusion and etching, obtain the P-type silicon sheet forming N-type emitter;
2) by described formation N-type emitter P-type silicon sheet be oxidized, all form layer of silicon dioxide layer in its front and the back side;
3) plasma activated chemical vapour deposition silicon dioxide layer surface deposition silicon dioxide layer is overleaf utilized, and then deposited silicon nitride, form backside passivation layer;
4) utilize plasma activated chemical vapour deposition at front silicon dioxide layer surface deposition silicon nitride, form passivating film;
5) the P-type silicon sheet back side fluting sintering formed after passivating film is formed local aluminum back surface field, then printing back of the body electric field, back electrode and positive electrode, obtains passivating back solar cell after sintering.
Preferably, described step 2) in be oxidized to thermal oxidation or utilize ozone oxidation.
Preferably, described step 5) in form local aluminum back surface field by the mode of silk screen printing sintering of slotting overleaf.
Preferably, the resistivity of described P-type silicon sheet is 1 ~ 3 Ω cm; The thickness of described P-type silicon sheet is 160 ~ 200 μm.
The invention provides a kind of passivating back solar cell and preparation method thereof, comprise the following steps: 1) P-type silicon sheet is carried out making herbs into wool, diffusion and etching, obtain the P-type silicon sheet forming N-type emitter; 2) the P-type silicon sheet of described formation N-type emitter is oxidized, all forms layer of silicon dioxide layer in its front and the back side; 3) PECVD silicon dioxide layer surface deposition silicon dioxide layer is overleaf utilized, and then deposited silicon nitride, form backside passivation layer; 4) utilize PECVD at front silicon dioxide layer surface deposition silicon nitride, form passivating film; 5) the P-type silicon sheet back side fluting sintering formed after passivating film is formed local aluminum back surface field, then printing back of the body electric field, back electrode and positive electrode, obtains passivating back solar cell after sintering.Compared with prior art, the present invention adopts two-sided silicon dioxide/silicon nitride overlayer passivation film to make battery surface form good passivation, simultaneously because the dangling bonds at polysilicon grain boundary place are main complex centres, containing a large amount of hydrogen atoms in silicon nitride layer prepared by PECVD, the dangling bonds at saturable silicon face place, and be diffused in rapid thermal treatment in silicon chip, defect and impurity in passivation silicon body electroactive, thus play the effect of surface passivation and body passivation, in addition, higher back reflection rate adds the absorption of the light of long wavelength, improve the collection of charge carrier near back surface, and the passivation of two-sided silicon dioxide/silicon nitride stack membrane improves the life-span of minority carrier, thus improve open circuit voltage and the short-circuit current density of passivating back solar cell, final efficiency is got a promotion.
Accompanying drawing explanation
Fig. 1 is the partial structurtes schematic diagram of passivating back solar cell provided by the invention.
Embodiment
Below in conjunction with the accompanying drawing of the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
The invention provides a kind of passivating back solar cell, comprising: back electrode, full aluminum back electric field, backside passivation layer, local aluminum back surface field, P-type silicon, N-type emitter, passivating film and positive electrode;
Described back electrode, full aluminum back electric field, backside passivation layer, P-type silicon, N-type emitter are connected from the bottom to top successively with passivating film;
Described full aluminum back electric field is connected with described P-type silicon by described local aluminum back surface field;
Described positive electrode is arranged on passivating film, and is connected with described N-type emitter by sintering;
Described backside passivation layer comprises silicon dioxide layer and silicon nitride layer, and described silicon dioxide layer is connected with described P-type silicon, and described silicon nitride layer is connected with described full aluminum back electric field; Described silicon dioxide layer comprises the silicon dioxide layer and the silicon dioxide layer that formed of plasma activated chemical vapour deposition (PECVD) that oxidation formed;
Described passivating film comprises silicon dioxide layer and silicon nitride layer, and described silicon dioxide layer is connected with described N-type emitter.
The partial structurtes schematic diagram of passivating back solar cell provided by the invention as shown in Figure 1, wherein a is full aluminum back electric field, b is local aluminum back surface field, c is the silicon nitride layer in backside passivation layer, and d is the silicon dioxide layer in backside passivation layer, and e is P-type silicon, f is N-type emitter, g is the silicon dioxide layer in passivating film, and h is the silicon nitride layer in passivating film, and i is positive electrode.
In the present invention, described back electrode, full aluminum back electric field are back electrode well known to those skilled in the art and full aluminum back electric field, there is no special restriction.
Described backside passivation layer comprises silicon dioxide layer (SiO
xlayer) and silicon nitride layer (SiN
xlayer); Described silicon dioxide layer is connected with described P-type silicon, and described silicon nitride is connected with described full aluminum back electric field.Wherein, described silicon dioxide layer comprises the silicon dioxide layer and the silicon dioxide layer that formed of PECVD that oxidation formed; The thickness of the silicon dioxide layer that described oxidation is formed is preferably 5 ~ 10nm, is more preferably 6 ~ 8nm; The refractive index of the silicon dioxide layer that described oxidation is formed is preferably 1.4 ~ 1.6; The thickness of the silicon dioxide layer that described PECVD is formed is preferably 20 ~ 30nm, is more preferably 23 ~ 28nm; The refractive index of the silicon dioxide layer that described PECVD is formed is preferably 1.5 ~ 1.8; The thickness of described silicon nitride layer is preferably 100 ~ 150nm, is more preferably 110 ~ 140nm, then is preferably 120 ~ 140nm; The refractive index of described silicon nitride layer is preferably 1.8 ~ 2.2, is more preferably 1.9 ~ 2.1.
Described backside passivation layer is connected with the back side of described P-type silicon, and described P-type silicon is P-type silicon well known to those skilled in the art, there is no special restriction, and the resistivity of P-type silicon described in the present invention is preferably 1 ~ 3 Ω cm.
The front of described P-type silicon is provided with N-type emitter, and described N-type launches N-type emitter very well known to those skilled in the art, there is no special restriction.
Described N-type emitter is provided with passivating film, and described passivating film comprises silicon dioxide layer and silicon nitride layer, and described silicon dioxide layer is connected with described N-type emitter.Wherein, the thickness of described silicon dioxide layer is preferably 5 ~ 10nm, is more preferably 6 ~ 10nm; The refractive index of described silicon dioxide layer is preferably 1.4 ~ 1.6; The thickness of described silicon nitride layer is preferably 75 ~ 95nm, is more preferably 80 ~ 90nm; The refractive index of described silicon nitride is preferably 1.8 ~ 2.1.
Described passivating film is provided with positive electrode, and it is connected with described N-type emitter; Described positive electrode is preferably silver electrode.
Present invention also offers a kind of preparation method of above-mentioned passivating back solar cell, comprise the following steps: 1) P-type silicon sheet is carried out making herbs into wool, diffusion and etching, obtain the P-type silicon sheet forming N-type emitter; 2) the P-type silicon sheet of described formation N-type emitter is oxidized, all forms layer of silicon dioxide layer in its front and the back side; 3) PECVD silicon dioxide layer surface deposition silicon dioxide layer is overleaf utilized, and then deposited silicon nitride, form backside passivation layer; 4) utilize PECVD at front silicon dioxide layer surface deposition silicon nitride, form passivating film; 5) the P-type silicon sheet back side fluting sintering formed after passivating film is formed local aluminum back surface field, then printing back of the body electric field, back electrode and positive electrode, obtains passivating back solar cell after sintering.
Wherein, the resistivity of described P-type silicon sheet is preferably 1 ~ 3 Ω cm; The thickness of described P-type silicon sheet is preferably 160 ~ 200 μm, is more preferably 170 ~ 190 μm.
P-type silicon sheet is carried out making herbs into wool, diffusion and etching, obtain the P-type silicon sheet forming N-type emitter, described making herbs into wool, diffusion and the method etched are the method that those skilled in the art commonly use, special restriction.
The P-type silicon sheet forming N-type emitter is oxidized, the method of described oxidation is preferably thermal oxidation or ozone oxidation, layer of silicon dioxide layer is all formed on the surface of the back side of P-type silicon sheet and N-type emitter, by this step, obtain at the back side of P-type silicon sheet being oxidized the silicon dioxide layer formed, the silicon dioxide layer that described oxidation is formed is same as above identical, does not repeat them here; Obtain the silicon dioxide layer in passivating film in N-type emitter surface, it is same as above, does not repeat them here.
Utilize the surface deposition silicon dioxide layer of PECVD silicon dioxide layer overleaf, obtain the silicon dioxide layer that PECVD is formed.The silicon dioxide layer that described PECVD is formed is same as above, does not repeat them here.Tubular type or board-like PECVD device is preferably adopted to deposit in the present invention; The reacting gas source of described deposition is preferably SiH
4with N
2the mist of O or SiH
4with CO
2mist; Described SiH
4flow be preferably 100 ~ 1000sccm, be more preferably 200 ~ 800sccm, then be preferably 300 ~ 600sccm; Described N
2o or CO
2flow be preferably 2 ~ 8slm, be more preferably 2 ~ 6slm, then be preferably 2 ~ 5slm; Described N
2o or CO
2with SiH
4flow-rate ratio be preferably (20 ~ 30): 1, then be preferably (15 ~ 25): 1; Pressure in pipe is preferably 1600 ~ 2600mTorr, is more preferably 1600 ~ 2400mTorr; The radio-frequency power of PECVD is preferably 5000 ~ 7000W; The duty ratio of described PECVD is preferably (2:36) ~ (4:56), is more preferably (3:48) ~ (4:52).
Then at silicon dioxide layer surface deposition silicon nitride, obtain the silicon nitride layer in backside passivation layer, form backside passivation layer.Silicon nitride layer in described backside passivation layer is same as above, does not repeat them here.The reacting gas source of described deposition is preferably SiH
4with NH
3mist.Described SiH
4flow be preferably 500 ~ 800sccm, be more preferably 500 ~ 700sccm; Described NH
3flow be preferably 4 ~ 7slm, be more preferably 5 ~ 6slm; Pressure in pipe is preferably 1600 ~ 2600mTorr, is more preferably 1600 ~ 2400mTorr; The radio-frequency power of PECVD is preferably 5000 ~ 7000W; The duty ratio of described PECVD is preferably (2:36) ~ (4:56), is more preferably (3:48) ~ (4:52).
PECVD is at front silicon dioxide layer surface deposition silicon nitride for recycling, obtains the silicon nitride layer in passivating film, forms passivating film.Silicon dioxide layer in described passivating film is same as above, does not repeat them here.The raw material of described deposition is preferably SiH
4with NH
3mist.Described SiH
4flow be preferably 500 ~ 800sccm, be more preferably 500 ~ 700sccm; Described NH
3flow be preferably 4 ~ 7slm, be more preferably 5 ~ 6slm; Pressure in pipe is preferably 1600 ~ 2600mTorr, is more preferably 1600 ~ 2400mTorr; The radio-frequency power of PECVD is preferably 5000 ~ 7000W; The duty ratio of described PECVD is preferably (2:36) ~ (4:56), is more preferably (3:48) ~ (4:52).
After forming passivating film, back side fluting sintering forms local aluminum back surface field, preferably adopts the mode of silk screen printing to slot overleaf in the present invention and sinters formation local aluminum back surface field, like this without the need to using high equipment to prepare aluminium oxide, also without the need to lbg, production cost has been saved.
Finally, the printing back of the body electric field, back electrode and positive electrode, obtain passivating back solar cell after sintering.
The present invention adopts two-sided silicon dioxide/silicon nitride overlayer passivation film to make battery surface form good passivation, simultaneously because the dangling bonds at polysilicon grain boundary place are main complex centres, containing a large amount of hydrogen atoms in silicon nitride layer prepared by PECVD, the dangling bonds at saturable silicon face place, and be diffused in rapid thermal treatment in silicon chip, defect and impurity in passivation silicon body electroactive, thus play the effect of surface passivation and body passivation, in addition, higher back reflection rate adds the absorption of the light of long wavelength, improve the collection of charge carrier near back surface, and the passivation of two-sided silicon dioxide/silicon nitride stack membrane improves the life-span of minority carrier, thus improve open circuit voltage and the short-circuit current density of passivating back solar cell, final efficiency is got a promotion.
In order to further illustrate the present invention, below in conjunction with embodiment, a kind of passivating back solar cell provided by the invention and preparation method thereof is described in detail.
Reagent used in following examples is commercially available.
Embodiment 1
1.1 adopt 156mm × 156mm, and resistivity is 1 ~ 3 Ω cm, and thickness is 180 ~ 200 μm of P type 156 chamfering monocrystalline (chamferings of 205) silicon chips, carry out the making herbs into wool in early stage, diffusion, etching, obtain the P-type silicon sheet forming N-type emitter.
1.2 utilize ozone devices, and be oxidized the P-type silicon sheet of the formation N-type emitter obtained in 1.1, all form in front and the back side silicon dioxide layer that a layer thickness is 5nm, refractive index is 1.4.
1.3 adopt Tubular PECVD device to continue deposited silicon dioxide layer overleaf: pass into SiH
4and N
2o, control SiH
4the flow of gas is 200sccm, N
2the flow of O is 3slm, and overpressure is 1600mTorr, and radio-frequency power is 6000W, and duty ratio is 2:36, sedimentation time 150s, and obtaining thickness is 20nm, and refractive index is the silicon dioxide layer of the chemical deposition formation of 1.5.
The 1.4 silicon dioxide layer surface deposition silicon nitride layers adopting Tubular PECVD device to be formed in chemical deposition: pass into SiH
4and NH
3, described NH
3flow is 5.5slm, SiH
4range of flow is 550sccm, and overpressure is 1800mTorr, and radio-frequency power is 6500W, and duty ratio is 3:48, sedimentation time 750s, and obtaining thickness is 100nm, and refractive index is the silicon nitride layer of 1.8, forms backside passivation layer.
1.5 adopt Tubular PECVD device at front silicon dioxide layer surface deposition silicon nitride layer: pass into SiH
4and NH
3, described NH
3flow is 5.5slm, SiH
4range of flow is 550sccm, and overpressure is 1800mTorr, and radio-frequency power is 6500W, and duty ratio is 4:48, sedimentation time 650s, and obtaining thickness is 75nm, and refractive index is the silicon nitride layer of 1.8, forms passivating film.
1.6 slotted overleaf by the mode of silk screen printing after sintering form local aluminum back surface field, the printing back of the body electric field, back electrode and positive electrode, obtain passivating back solar cell after sintering.
Embodiment 2
2.1 adopt 156mm × 156mm, and resistivity is 1 ~ 3 Ω cm, and thickness is 180 ~ 200 μm of P type 156 chamfering monocrystalline (chamferings of 205) silicon chips, carry out the making herbs into wool in early stage, diffusion, etching, obtain the P-type silicon sheet forming N-type emitter.
2.2 utilize ozone devices, and be oxidized the P-type silicon sheet of the formation N-type emitter obtained in 2.1, all form in front and the back side silicon dioxide layer that a layer thickness is 8nm, refractive index is 1.45.
2.3 adopt Tubular PECVD device to continue deposited silicon dioxide layer overleaf: pass into SiH
4and N
2o, control SiH
4the flow of gas is 300sccm, N
2the flow of O is 4.5slm, and overpressure is 1600mTorr, and radio-frequency power is 6000W, and duty ratio is 2:36, sedimentation time 150s, and obtaining thickness is 23nm, and refractive index is the silicon dioxide layer of the chemical deposition formation of 1.5.
The 2.4 silicon dioxide layer surface deposition silicon nitride layers adopting Tubular PECVD device to be formed in chemical deposition: pass into SiH
4and NH
3, described NH
3flow is 5.5slm, SiH
4range of flow is 550sccm, and overpressure is 1800mTorr, and radio-frequency power is 6500W, and duty ratio is 4:48, sedimentation time 750s, and obtaining thickness is 100nm, and refractive index is the silicon nitride layer of 2.0, forms backside passivation layer.
2.5 adopt Tubular PECVD device at front silicon dioxide layer surface deposition silicon nitride layer: pass into SiH
4and NH
3, described NH
3flow is 5.5slm, SiH
4range of flow is 550sccm, and overpressure is 1800mTorr, and radio-frequency power is 6500W, and duty ratio is 4:48, sedimentation time 700s, and obtaining thickness is 80nm, and refractive index is the silicon nitride layer of 1.9, forms passivating film.
2.6 slotted overleaf by the mode of silk screen printing after sintering form local aluminum back surface field, the printing back of the body electric field, back electrode and positive electrode, obtain passivating back solar cell after sintering.
Embodiment 3
3.1 adopt 156mm × 156mm, and resistivity is 1 ~ 3 Ω cm, and thickness is 180 ~ 200 μm of P type 156 chamfering monocrystalline (chamferings of 205) silicon chips, carry out the making herbs into wool in early stage, diffusion, etching, obtain the P-type silicon sheet forming N-type emitter.
3.2 utilize ozone devices, and be oxidized the P-type silicon sheet of the formation N-type emitter obtained in 3.1, all form in front and the back side silicon dioxide layer that a layer thickness is 10nm, refractive index is 1.5.
3.3 adopt Tubular PECVD device to continue deposited silicon dioxide layer overleaf: pass into SiH
4and N
2o, control SiH
4the flow of gas is 400sccm, N
2the flow of O is 6slm, and overpressure is 1600mTorr, and radio-frequency power is 6000W, and duty ratio is 2:36, sedimentation time 200s, and obtaining thickness is 26nm, and refractive index is the silicon dioxide layer of the chemical deposition formation of 1.6.
The 3.4 silicon dioxide layer surface deposition silicon nitride layers adopting Tubular PECVD device to be formed in chemical deposition: pass into SiH
4and NH
3, described NH
3flow is 5.5slm, SiH
4range of flow is 550sccm, and overpressure is 1800mTorr, and radio-frequency power is 6500W, and duty ratio is 4:52, sedimentation time 850s, and obtaining thickness is 150nm, and refractive index is the silicon nitride layer of 2.1, forms backside passivation layer.
3.5 adopt Tubular PECVD device at front silicon dioxide layer surface deposition silicon nitride layer: pass into SiH
4and NH
3, described NH
3flow is 5.5slm, SiH
4range of flow is 550sccm, and overpressure is 1800mTorr, and radio-frequency power is 6500W, and duty ratio is 4:56, sedimentation time 800s, and obtaining thickness is 95nm, and refractive index is the silicon nitride layer of 2.0, forms passivating film.
3.6 slotted overleaf by the mode of silk screen printing after sintering form local aluminum back surface field, the printing back of the body electric field, back electrode and positive electrode, obtain passivating back solar cell after sintering.
Comparative example 1
1.1 adopt 156mm × 156mm, and resistivity is 1 ~ 3 Ω cm, and thickness is 180 ~ 200 μm of P type 156 chamfering monocrystalline (chamferings of 205) silicon chips, carry out the making herbs into wool in early stage, diffusion, etching, obtain the P-type silicon sheet forming N-type emitter.
1.2 utilize PECVD to prepare silicon nitride passivation in the P-type silicon sheet front that 1.1 form N-type emitter.
1.3 printing back electrodes, back of the body electric field and positive electrode, obtain solar cell after sintering.
Lifetime, ImpliesVoc of the passivating back solar cell obtained in embodiment 1 ~ 3 and comparative example 1 and electrical property are carried out that test obtains the results are shown in Table 1, table 2 and table 3.
Table 1 passivating back solar cell Lifetime test result
Table 2 passivating back solar cell Voc test result
Table 3 passivating back solar cell electric performance test result
| Type | Comment | Uoc | Isc | Rs | Rsh | FF | Eta | IRev2 |
| Comparative example 1 | 1000 | 0.6395 | 9.233 | 0.00205 | 665.26 | 80.24 | 19.67 | 0.0181 |
| Embodiment 1 | 1000 | 0.6512 | 9.424 | 0.00287 | 159.37 | 79.01 | 20.13 | 0.0676 |
| Embodiment 2 | 1000 | 0.6525 | 9.4056 | 0.00294 | 202.04 | 78.74 | 20.10 | 0.0537 |
| Embodiment 3 | 1000 | 0.6475 | 9.355 | 0.00285 | 318.75 | 79.47 | 20.14 | 0.0975 |
Claims (10)
1. a passivating back solar cell, is characterized in that, comprising: back electrode, full aluminum back electric field, backside passivation layer, local aluminum back surface field, P-type silicon, N-type emitter, passivating film and positive electrode;
Described back electrode, full aluminum back electric field, backside passivation layer, P-type silicon, N-type emitter are connected from the bottom to top successively with passivating film;
Described full aluminum back electric field is connected with described P-type silicon by described local aluminum back surface field;
Described positive electrode is arranged on passivating film, and is connected with described N-type emitter by sintering;
Described backside passivation layer comprises silicon dioxide layer and silicon nitride layer, and described silicon dioxide layer is connected with described P-type silicon, and described silicon nitride layer is connected with described full aluminum back electric field; Described silicon dioxide layer comprises the silicon dioxide layer and the silicon dioxide layer that formed of plasma activated chemical vapour deposition that oxidation formed;
Described passivating film comprises silicon dioxide layer and silicon nitride layer, and described silicon dioxide layer is connected with described N-type emitter.
2. passivating back solar cell according to claim 1, is characterized in that, the thickness of the silicon dioxide layer that the oxidation in described backside passivation layer is formed is 5 ~ 10nm.
3. passivating back solar cell according to claim 1, is characterized in that, in described backside passivation layer, the thickness of the silicon dioxide layer that plasma activated chemical vapour deposition is formed is 20 ~ 30nm.
4. passivating back solar cell according to claim 1, is characterized in that, the thickness of the silicon nitride layer in described backside passivation layer is 100 ~ 150nm.
5. passivating back solar cell according to claim 1, is characterized in that, in described passivating film, the thickness of silicon dioxide layer is 5 ~ 10nm.
6. passivating back solar cell according to claim 1, is characterized in that, in described passivating film, the thickness of silicon nitride layer is 75 ~ 95nm.
7. a preparation method for passivating back solar cell, is characterized in that, comprises the following steps:
1) P-type silicon sheet is carried out making herbs into wool, diffusion and etching, obtain the P-type silicon sheet forming N-type emitter;
2) by described formation N-type emitter P-type silicon sheet be oxidized, all form layer of silicon dioxide layer in its front and the back side;
3) plasma activated chemical vapour deposition silicon dioxide layer surface deposition silicon dioxide layer is overleaf utilized, and then deposited silicon nitride, form backside passivation layer;
4) utilize plasma activated chemical vapour deposition at front silicon dioxide layer surface deposition silicon nitride, form passivating film;
5) the P-type silicon sheet back side fluting sintering formed after passivating film is formed local aluminum back surface field, then printing back of the body electric field, back electrode and positive electrode, obtains passivating back solar cell after sintering.
8. preparation method according to claim 7, is characterized in that, described step 2) in be oxidized to thermal oxidation or utilize ozone oxidation.
9. preparation method according to claim 7, is characterized in that, described step 5) in form local aluminum back surface field by the mode of silk screen printing sintering of slotting overleaf.
10. preparation method according to claim 7, is characterized in that, the resistivity of described P-type silicon sheet is 1 ~ 3 Ω cm; The thickness of described P-type silicon sheet is 160 ~ 200 μm.
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