CN202695455U

CN202695455U - Crystalline silicon solar cell module with protective layer

Info

Publication number: CN202695455U
Application number: CN201220413114.5U
Authority: CN
Inventors: 金刘
Original assignee: Jiangsu Green Power PV Co Ltd
Current assignee: Jiangsu Green Power PV Co Ltd
Priority date: 2012-08-20
Filing date: 2012-08-20
Publication date: 2013-01-23
Anticipated expiration: 2022-08-20

Abstract

The utility model relates to a crystalline silicon solar cell module with a protective layer. The solar cell module comprises a negative electrode layer, an N type silicon layer, a P type silicon layer, and a positive electrode layer, wherein the above-mentioned layers are successively stacked. Besides, the solar cell module includes an antireflection film layer and passivation film layers, wherein the antireflection film layer is arranged between the negative electrode layer and the N type silicon layer; and the passivation film layers are arranged between the antireflection film layer and the N type silicon layer as well as between the positive electrode layer and the P type silicon layer. According to the utility model, a silicon nitride film is deposited by employing plasma enhanced chemical vapor deposition (PECVD) and is used for the antireflection film layer of the solar cell module, so that light reflection can be effectively reduced. Moreover, the silicon nitride film contains lots of hydrogen and thus the surface dangling bond in the silicon can be passivated well, thereby improving the carrier mobility. Meanwhile, because the silicon dioxide film is deposited between the silicon nitride film and the N type silicon, the reflection loss of incident lights at the solar cell surface can be effectively reduced and thus the absorbed sunlight amount of the solar cell module can be enhanced; and the solar cell module can absorb all sunlight spectrums from all angles, so that the economic benefits of a solar power station can be substantially improved.

Description

A kind of crystal silicon solar battery component with protective layer

Technical field

The utility model relates to technical field of solar batteries, particularly a kind of crystal silicon solar battery component with protective layer.

Background technology

Solar module also is solar panel, is the core in the solar power system, also is most important part in the solar power system.Solar cell is the device that directly light energy conversion is become electric energy by photoelectric effect or Photochemical effects.Solar cell more and more receives people's concern as green energy resource.The crystalline silicon material quality plays vital effect to the efficient of solar cell, and crystalline silicon substrate material surface defect concentration is very high, such as a large amount of dangling bonds, impurity and scission of link etc., causes the silicon chip surface minority carrier life time greatly to reduce, and recombination rate is lower.

The utility model content

The purpose of this utility model is to overcome the defective that prior art exists, and provides a kind of conversion efficiency the high crystal silicon solar battery component with protective layer.

The technical scheme that realizes the utility model purpose is: a kind of crystal silicon solar battery component with protective layer has the negative electrode layer, N-type silicon layer, P type silicon layer and the anodal layer that stack gradually; Also have antireflection film layer and passivation film; Described antireflection film layer is arranged between negative electrode layer and the N-type silicon layer; All has passivation film between described antireflection film layer and the N-type silicon layer and between anodal layer and the P type silicon layer.

The described antireflection film layer of technique scheme is silicon nitride layer.

The described passivation film of technique scheme is silicon dioxide layer.

The described negative electrode layer of technique scheme and anodal layer are silver layer.

The surface of the described negative electrode layer of technique scheme is provided with main grid and the secondary grid vertical with main grid and that equidistantly distribute that form by the half tone graphic printing.

Have back electrode and back of the body electric field on the described anodal layer of technique scheme.

After adopting technique scheme, the utlity model has following positive effect:

(1) the utility model adopts the PECVD silicon nitride film as the antireflection film layer of solar components, Main Function is to reduce reflection of light, and silicon nitride film contains a large amount of hydrogen, the surperficial dangling bonds in can well passivation silicon, thus improved carrier mobility; Simultaneously, deposition of silica film between silicon nitride film and N-type silicon, can more effective minimizing incident light in the reflection loss of solar cell surface, improve the amount that solar components absorbs sunlight, and can allow solar components absorb whole sunlight spectrum from all angles, thereby the economic benefit of solar power station is greatly improved.

(2) be provided with passivation film between anodal layer of the present utility model and the P type silicon layer; Passivation film is silicon dioxide layer, and silicon dioxide has the effect of gettering, passivation, can improve reflection efficiency.

(3) the utility model is used silver paste and is made electrode and back of the body electric field, optimize graphic designs, not only guarantee the planarization of the good conductivity of electrode, solderability and back of the body electric field, had more the printing performance of excellence, the advantage that adhesive force is high, flexibility is low and conversion efficiency is high.

Description of drawings

Content of the present utility model is easier to be expressly understood in order to make, and the below is described in further detail the utility model, wherein according to specific embodiment also by reference to the accompanying drawings

Fig. 1 is structural representation of the present utility model;

1. negative electrode layers among the figure, 11. main grids, 12. secondary grid, 2.N type silicon layer, 3.P type silicon layer, 4. anodal layer, 41. back electrodes, 42. back of the body electric field, 5. antireflection film layer, 6. passivation films.

Embodiment

(embodiment 1)

See Fig. 1, the utlity model has the negative electrode layer 1, N-type silicon layer 2, P type silicon layer 3, anodal layer 4, antireflection film layer 5 and the passivation film 6 that stack gradually; Negative electrode layer 1 and anodal layer 4 are silver layer; The surface of negative electrode layer 1 is provided with the main grid 11 that forms by the half tone graphic printing and and the equidistantly secondary grid 12 of distribution vertical with main grid 11; Have back electrode 41 and back of the body electric field 42 on the anodal layer 4; Antireflection film layer 6 is arranged between negative electrode layer 1 and the N-type silicon layer 2; All has passivation film 5 between antireflection film layer 6 and the N-type silicon layer 2 and between anodal layer 4 and the P type silicon layer 3.Wherein, antireflection film layer 5 is silicon nitride layer; Passivation film 6 is silicon dioxide layer.

Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., all should be included within the protection range of the present utility model.

Claims

1. the crystal silicon solar battery component with protective layer has the negative electrode layer (1), N-type silicon layer (2), P type silicon layer (3) and the anodal layer (4) that stack gradually; It is characterized in that: also have antireflection film layer (5) and passivation film (6); Described antireflection film layer (6) is arranged between negative electrode layer (1) and the N-type silicon layer (2); All has passivation film (5) between described antireflection film layer (6) and the N-type silicon layer (2) and between anodal layer (4) and the P type silicon layer (3).

2. the crystal silicon solar battery component with protective layer according to claim 1, it is characterized in that: described antireflection film layer (5) is silicon nitride layer.

3. the crystal silicon solar battery component with protective layer according to claim 1 and 2, it is characterized in that: described passivation film (6) is silicon dioxide layer.

4. the crystal silicon solar battery component with protective layer according to claim 3 is characterized in that: described negative electrode layer (1) and anodal layer (4) are silver layer.

5. the crystal silicon solar battery component with protective layer according to claim 4 is characterized in that: the surface of described negative electrode layer (1) is provided with the main grid (11) that forms by the half tone graphic printing and and the equidistantly secondary grid (12) of distribution vertical with main grid (11).

6. the crystal silicon solar battery component with protective layer according to claim 5 is characterized in that: have back electrode (41) and back of the body electric field (42) on the described anodal layer (4).