CN202695456U - Solar assembly with protective layer - Google Patents
Solar assembly with protective layer Download PDFInfo
- Publication number
- CN202695456U CN202695456U CN201220413288.1U CN201220413288U CN202695456U CN 202695456 U CN202695456 U CN 202695456U CN 201220413288 U CN201220413288 U CN 201220413288U CN 202695456 U CN202695456 U CN 202695456U
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- Prior art keywords
- layer
- negative electrode
- type silicon
- antireflection film
- solar assembly
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Abstract
The utility model relates to a solar assembly with a protective layer. The solar assembly comprises a negative electrode layer, an N type silicon layer, a P type silicon layer, and a positive electrode layer, wherein the above-mentioned layers are successively stacked. Besides, the solar assembly also includes an antireflection film layer arranged between the negative electrode layer and the N type silicon layer. According to the utility model, a silicon nitride film that is deposited by employing plasma enhanced chemical vapor deposition (PECVD) is used as an antireflection film of the solar assembly, so that light reflection can be effectively reduced. Moreover, the silicon nitride film contains lots of hydrogen and thus the surface dangling bond in the silicon can be passivated well, thereby improving the carrier mobility.
Description
Technical field
The utility model relates to technical field of solar batteries, particularly a kind of solar components with protective layer.
Background technology
Solar module also is solar panel, is the core in the solar power system, also is most important part in the solar power system.Solar cell is the device that directly light energy conversion is become electric energy by photoelectric effect or Photochemical effects.Solar cell more and more receives people's concern as green energy resource.The crystalline silicon material quality plays vital effect to the efficient of solar cell, and crystalline silicon substrate material surface defect concentration is very high, such as a large amount of dangling bonds, impurity and scission of link etc., causes the silicon chip surface minority carrier life time greatly to reduce, and recombination rate is lower.
The utility model content
The purpose of this utility model is to overcome the defective that prior art exists, and provides a kind of conversion efficiency the high solar components with protective layer.
The technical scheme that realizes the utility model purpose is: a kind of solar components with protective layer has the negative electrode layer, N-type silicon layer, P type silicon layer and the anodal layer that stack gradually; Also has antireflection film layer; Described antireflection film layer is arranged between negative electrode layer and the N-type silicon layer.
The described antireflection film layer of technique scheme is silicon nitride layer.
The described negative electrode layer of technique scheme and positive electrode are silver layer.
The surface of the described negative electrode layer of technique scheme is provided with main grid and the secondary grid vertical with main grid and that equidistantly distribute that form by the half tone graphic printing.
Have back electrode and back of the body electric field on the described anodal layer of technique scheme.
After adopting technique scheme, the utlity model has following positive effect:
(1) the utility model adopts the PECVD silicon nitride film as the antireflection film layer of solar components, Main Function is to reduce reflection of light, and silicon nitride film contains a large amount of hydrogen, the surperficial dangling bonds in can well passivation silicon, thus improved carrier mobility.
(2) the utility model is used silver paste and is made electrode and back of the body electric field, optimize graphic designs, not only guarantee the planarization of the good conductivity of electrode, solderability and back of the body electric field, had more the printing performance of excellence, the advantage that adhesive force is high, flexibility is low and conversion efficiency is high.
Description of drawings
Content of the present utility model is easier to be expressly understood in order to make, and the below is described in further detail the utility model, wherein according to specific embodiment also by reference to the accompanying drawings
Fig. 1 is structural representation of the present utility model;
1. negative electrode layers among the figure, 11. main grids, 12. secondary grid, 2.N type silicon layer, 3.P type silicon layer, 4. anodal layer, 41. back electrodes, 42. back of the body electric field, 5. antireflection film layers.
Embodiment
(embodiment 1)
See Fig. 1, the utlity model has the negative electrode layer 1, N-type silicon layer 2, P type silicon layer 3, anodal layer 4 and the antireflection film layer 5 that stack gradually; Negative electrode layer 1 and positive electrode 1 are silver layer, and the surface of negative electrode layer 1 is provided with the main grid 11 that forms by the half tone graphic printing and and the equidistantly secondary grid 12 of distribution vertical with main grid 11; Have back electrode 41 and back of the body electric field 42 on the anodal layer 4; Antireflection film layer 5 is silicon nitride layer, and antireflection film layer 5 is arranged between negative electrode layer 1 and the N-type silicon layer 2.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., all should be included within the protection range of the present utility model.
Claims (5)
1. the solar components with protective layer has the negative electrode layer (1), N-type silicon layer (2), P type silicon layer (3) and the anodal layer (4) that stack gradually; It is characterized in that: also have antireflection film layer (5); Described antireflection film layer (5) is arranged between negative electrode layer (1) and the N-type silicon layer (2).
2. the solar components with protective layer according to claim 1, it is characterized in that: described antireflection film layer (5) is silicon nitride layer.
3. the solar components with protective layer according to claim 1 and 2, it is characterized in that: described negative electrode layer (1) and positive electrode (1) are silver layer.
4. the solar components with protective layer according to claim 3 is characterized in that: the surface of described negative electrode layer (1) is provided with the main grid (11) that forms by the half tone graphic printing and and the equidistantly secondary grid (12) of distribution vertical with main grid (11).
5. the solar components with protective layer according to claim 4 is characterized in that: have back electrode (41) and back of the body electric field (42) on the described anodal layer (4).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201220413288.1U CN202695456U (en) | 2012-08-20 | 2012-08-20 | Solar assembly with protective layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201220413288.1U CN202695456U (en) | 2012-08-20 | 2012-08-20 | Solar assembly with protective layer |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202695456U true CN202695456U (en) | 2013-01-23 |
Family
ID=47551030
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201220413288.1U Expired - Lifetime CN202695456U (en) | 2012-08-20 | 2012-08-20 | Solar assembly with protective layer |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN202695456U (en) |
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2012
- 2012-08-20 CN CN201220413288.1U patent/CN202695456U/en not_active Expired - Lifetime
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CX01 | Expiry of patent term |
Granted publication date: 20130123 |
|
CX01 | Expiry of patent term |