CN202695456U - Solar assembly with protective layer - Google Patents

Solar assembly with protective layer Download PDF

Info

Publication number
CN202695456U
CN202695456U CN201220413288.1U CN201220413288U CN202695456U CN 202695456 U CN202695456 U CN 202695456U CN 201220413288 U CN201220413288 U CN 201220413288U CN 202695456 U CN202695456 U CN 202695456U
Authority
CN
China
Prior art keywords
layer
negative electrode
type silicon
antireflection film
solar assembly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN201220413288.1U
Other languages
Chinese (zh)
Inventor
金刘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jiangsu Green Power PV Co Ltd
Original Assignee
Jiangsu Green Power PV Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jiangsu Green Power PV Co Ltd filed Critical Jiangsu Green Power PV Co Ltd
Priority to CN201220413288.1U priority Critical patent/CN202695456U/en
Application granted granted Critical
Publication of CN202695456U publication Critical patent/CN202695456U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Landscapes

  • Photovoltaic Devices (AREA)

Abstract

The utility model relates to a solar assembly with a protective layer. The solar assembly comprises a negative electrode layer, an N type silicon layer, a P type silicon layer, and a positive electrode layer, wherein the above-mentioned layers are successively stacked. Besides, the solar assembly also includes an antireflection film layer arranged between the negative electrode layer and the N type silicon layer. According to the utility model, a silicon nitride film that is deposited by employing plasma enhanced chemical vapor deposition (PECVD) is used as an antireflection film of the solar assembly, so that light reflection can be effectively reduced. Moreover, the silicon nitride film contains lots of hydrogen and thus the surface dangling bond in the silicon can be passivated well, thereby improving the carrier mobility.

Description

A kind of solar components with protective layer
Technical field
The utility model relates to technical field of solar batteries, particularly a kind of solar components with protective layer.
Background technology
Solar module also is solar panel, is the core in the solar power system, also is most important part in the solar power system.Solar cell is the device that directly light energy conversion is become electric energy by photoelectric effect or Photochemical effects.Solar cell more and more receives people's concern as green energy resource.The crystalline silicon material quality plays vital effect to the efficient of solar cell, and crystalline silicon substrate material surface defect concentration is very high, such as a large amount of dangling bonds, impurity and scission of link etc., causes the silicon chip surface minority carrier life time greatly to reduce, and recombination rate is lower.
The utility model content
The purpose of this utility model is to overcome the defective that prior art exists, and provides a kind of conversion efficiency the high solar components with protective layer.
The technical scheme that realizes the utility model purpose is: a kind of solar components with protective layer has the negative electrode layer, N-type silicon layer, P type silicon layer and the anodal layer that stack gradually; Also has antireflection film layer; Described antireflection film layer is arranged between negative electrode layer and the N-type silicon layer.
The described antireflection film layer of technique scheme is silicon nitride layer.
The described negative electrode layer of technique scheme and positive electrode are silver layer.
The surface of the described negative electrode layer of technique scheme is provided with main grid and the secondary grid vertical with main grid and that equidistantly distribute that form by the half tone graphic printing.
Have back electrode and back of the body electric field on the described anodal layer of technique scheme.
After adopting technique scheme, the utlity model has following positive effect:
(1) the utility model adopts the PECVD silicon nitride film as the antireflection film layer of solar components, Main Function is to reduce reflection of light, and silicon nitride film contains a large amount of hydrogen, the surperficial dangling bonds in can well passivation silicon, thus improved carrier mobility.
(2) the utility model is used silver paste and is made electrode and back of the body electric field, optimize graphic designs, not only guarantee the planarization of the good conductivity of electrode, solderability and back of the body electric field, had more the printing performance of excellence, the advantage that adhesive force is high, flexibility is low and conversion efficiency is high.
Description of drawings
Content of the present utility model is easier to be expressly understood in order to make, and the below is described in further detail the utility model, wherein according to specific embodiment also by reference to the accompanying drawings
Fig. 1 is structural representation of the present utility model;
1. negative electrode layers among the figure, 11. main grids, 12. secondary grid, 2.N type silicon layer, 3.P type silicon layer, 4. anodal layer, 41. back electrodes, 42. back of the body electric field, 5. antireflection film layers.
Embodiment
(embodiment 1)
See Fig. 1, the utlity model has the negative electrode layer 1, N-type silicon layer 2, P type silicon layer 3, anodal layer 4 and the antireflection film layer 5 that stack gradually; Negative electrode layer 1 and positive electrode 1 are silver layer, and the surface of negative electrode layer 1 is provided with the main grid 11 that forms by the half tone graphic printing and and the equidistantly secondary grid 12 of distribution vertical with main grid 11; Have back electrode 41 and back of the body electric field 42 on the anodal layer 4; Antireflection film layer 5 is silicon nitride layer, and antireflection film layer 5 is arranged between negative electrode layer 1 and the N-type silicon layer 2.
Above-described specific embodiment; the purpose of this utility model, technical scheme and beneficial effect are further described; institute is understood that; the above only is specific embodiment of the utility model; be not limited to the utility model; all within spirit of the present utility model and principle, any modification of making, be equal to replacement, improvement etc., all should be included within the protection range of the present utility model.

Claims (5)

1. the solar components with protective layer has the negative electrode layer (1), N-type silicon layer (2), P type silicon layer (3) and the anodal layer (4) that stack gradually; It is characterized in that: also have antireflection film layer (5); Described antireflection film layer (5) is arranged between negative electrode layer (1) and the N-type silicon layer (2).
2. the solar components with protective layer according to claim 1, it is characterized in that: described antireflection film layer (5) is silicon nitride layer.
3. the solar components with protective layer according to claim 1 and 2, it is characterized in that: described negative electrode layer (1) and positive electrode (1) are silver layer.
4. the solar components with protective layer according to claim 3 is characterized in that: the surface of described negative electrode layer (1) is provided with the main grid (11) that forms by the half tone graphic printing and and the equidistantly secondary grid (12) of distribution vertical with main grid (11).
5. the solar components with protective layer according to claim 4 is characterized in that: have back electrode (41) and back of the body electric field (42) on the described anodal layer (4).
CN201220413288.1U 2012-08-20 2012-08-20 Solar assembly with protective layer Expired - Lifetime CN202695456U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201220413288.1U CN202695456U (en) 2012-08-20 2012-08-20 Solar assembly with protective layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201220413288.1U CN202695456U (en) 2012-08-20 2012-08-20 Solar assembly with protective layer

Publications (1)

Publication Number Publication Date
CN202695456U true CN202695456U (en) 2013-01-23

Family

ID=47551030

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201220413288.1U Expired - Lifetime CN202695456U (en) 2012-08-20 2012-08-20 Solar assembly with protective layer

Country Status (1)

Country Link
CN (1) CN202695456U (en)

Similar Documents

Publication Publication Date Title
CN201966219U (en) N type silicon solar cell
JP2017535975A (en) High efficiency N-type double-sided solar cell
CN205452299U (en) Back of body passivation crystalline silicon solar cells
CN102969368B (en) Electrode structure of solar cell piece
CN211295118U (en) Double-sided passivated crystalline silicon solar cell
CN204315587U (en) Based on the solar cell of GaN nano wire array
CN202695455U (en) Crystalline silicon solar cell module with protective layer
CN111725335A (en) HBC high-efficiency solar cell back electrode connection and packaging integrated structure
CN202695456U (en) Solar assembly with protective layer
CN102263156A (en) Technology for improving conversion efficiency of solar photovoltaic battery
CN202855746U (en) Solar energy assembly with high conversion rate
CN202695461U (en) Solar assembly with double-layer protective films
CN202695457U (en) Crystalline silicon solar cell module with protecting film
CN104091843B (en) Back passivation solar cell and manufacturing method thereof
CN202695458U (en) Solar assembly
CN208225885U (en) Separated type solar battery and solar array battery
CN202120925U (en) Crystalline silicon solar cell
CN202977494U (en) Crystalline silicon/amorphous silicon double-face double battery
CN202695459U (en) Crystalline silicon solar cell assembly
CN202695468U (en) Crystalline silicon solar cell assembly
CN202695469U (en) Crystalline silicon solar cell assembly
CN103633153A (en) Solar component with protective layer
CN202695467U (en) Solar assembly with low cost
CN110212060A (en) A kind of battery preparation method, battery, battery component and solar powered station
CN103633162A (en) Crystalline silicon solar cell component

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20130123

CX01 Expiry of patent term